JP5281110B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP5281110B2 JP5281110B2 JP2011091967A JP2011091967A JP5281110B2 JP 5281110 B2 JP5281110 B2 JP 5281110B2 JP 2011091967 A JP2011091967 A JP 2011091967A JP 2011091967 A JP2011091967 A JP 2011091967A JP 5281110 B2 JP5281110 B2 JP 5281110B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Description
線状に形成された前記第1導電型電極および前記第2導電型電極は、
それぞれ前記第1導電型電極パッドおよび前記第2導電型電極パッドと互いに交わる部分から直線または曲線で形成され、
前記第2導電型電極は、前記同一の辺に隣接する辺と反対側の辺側から前記第1導電型電極パッドおよび前記第2導電型電極パッドに隣接する辺側に向かうように曲がった形態となって互いにかみ合うフィンガー構造に形成され、前記曲がった部分は、隣接した2つの第1導電型電極の間に位置するように延長され、
前記曲がった形態をなす領域は、曲線状を有することを特徴とする窒化物半導体発光素子を提供する。
以下、本発明の実施形態の第1変形例による窒化物半導体発光素子(LED)の構造について、図5を参照して説明する。ただし、第1変形例の構成のうち上述の実施形態と同一の部分についての説明は省略し、第1変形例において異なる構成についてのみ詳述する。
以下、本発明の実施形態の第2変形例による窒化物半導体発光素子(LED)の構造について、図6を参照して説明する。ただし、第2変形例の構成のうち本発明の第1変形例と同一の部分についての説明は省略し、第2変形例において異なる構成についてのみ詳述することにする。
110 バッファ層
120 第1導電型窒化物半導体層
130 活性層
140 第2導電型窒化物半導体層
150 透明電極
160 第1導電型電極
160a 第1導電型電極パッド
160b 第1導電型接続電極
170 第2導電型電極
170a 第2導電型電極パッド
170b 第2導電型接続電極
Claims (3)
- 基板と、
前記基板上に形成された第1導電型窒化物半導体層と、
前記第1導電型窒化物半導体層の所定領域上に形成された活性層と、
前記活性層上に形成された第2導電型窒化物半導体層と、
前記第2導電型窒化物半導体層上に形成された透明電極と、
前記透明電極上に、互いに同一の辺に隣接し互いに分離して形成された2つ以上の第2導電型電極パッドと、
前記第2導電型電極パッドから前記同一の辺と相対する辺の方向に延びて線状に形成された複数の第2導電型電極と、
前記第1導電型窒化物半導体層上の、前記活性層が形成されていない部分に前記第2導電型電極パッドと同一の辺に隣接して形成され、前記第2導電型電極パッドの間に配置された1つ以上の第1導電型電極パッドと、
前記第1導電型電極パッドから一方向に延びて線状に形成された3つの第1導電型電極と、を含み、
線状に形成された前記第1導電型電極および前記第2導電型電極は、
それぞれ前記第1導電型電極パッドおよび前記第2導電型電極パッドと互いに交わる部分から直線または曲線で形成され、
前記第2導電型電極は、前記同一の辺に隣接する辺と反対側の辺側から前記第1導電型電極パッドおよび前記第2導電型電極パッドに隣接する辺側に向かうように曲がった形態となって互いにかみ合うフィンガー構造に形成され、前記曲がった部分は、隣接した2つの第1導電型電極の間に位置するように延長され、
前記曲がった形態をなす領域は、曲線状を有することを特徴とする窒化物半導体発光素子。 - 前記第1導電型窒化物半導体層および前記第2導電型窒化物半導体層は、n型
またはp型であることを特徴とする請求項1に記載の窒化物半導体発光
素子。 - 前記活性層は、前記第1導電型窒化物半導体層の四方の最外郭の辺から離隔し
て形成されていることを特徴とする請求項1または2に記載の窒化物半導体発光素子。
Applications Claiming Priority (2)
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KR10-2007-0000805 | 2007-01-03 | ||
KR1020070000805A KR100833311B1 (ko) | 2007-01-03 | 2007-01-03 | 질화물계 반도체 발광소자 |
Related Parent Applications (1)
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JP2007331994A Division JP2008166784A (ja) | 2007-01-03 | 2007-12-25 | 窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
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JP2011142349A JP2011142349A (ja) | 2011-07-21 |
JP5281110B2 true JP5281110B2 (ja) | 2013-09-04 |
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JP2007331994A Pending JP2008166784A (ja) | 2007-01-03 | 2007-12-25 | 窒化物半導体発光素子 |
JP2011091967A Active JP5281110B2 (ja) | 2007-01-03 | 2011-04-18 | 窒化物半導体発光素子 |
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JP2007331994A Pending JP2008166784A (ja) | 2007-01-03 | 2007-12-25 | 窒化物半導体発光素子 |
Country Status (3)
Country | Link |
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US (1) | US8110847B2 (ja) |
JP (2) | JP2008166784A (ja) |
KR (1) | KR100833311B1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD668234S1 (en) * | 2001-05-24 | 2012-10-02 | Lextar Electornics Corp. | LED chip |
TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
US8183575B2 (en) * | 2009-01-26 | 2012-05-22 | Bridgelux, Inc. | Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device |
TW201101538A (en) * | 2009-06-19 | 2011-01-01 | Ubilux Optoelectronics Corp | Light emitting diode |
KR101100684B1 (ko) * | 2009-07-15 | 2012-01-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
KR101093120B1 (ko) * | 2009-11-16 | 2011-12-13 | 서울옵토디바이스주식회사 | 전류분산을 위한 전극 연장부들을 갖는 발광 다이오드 |
KR101055768B1 (ko) * | 2009-12-14 | 2011-08-11 | 서울옵토디바이스주식회사 | 전극패드들을 갖는 발광 다이오드 |
US9236532B2 (en) | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
KR101625125B1 (ko) * | 2009-12-29 | 2016-05-27 | 서울바이오시스 주식회사 | 전극 연장부들을 갖는 발광 다이오드 |
WO2011083923A2 (en) * | 2010-01-07 | 2011-07-14 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
KR101014102B1 (ko) * | 2010-04-06 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101110937B1 (ko) | 2010-05-17 | 2012-03-05 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 |
KR101021988B1 (ko) * | 2010-06-24 | 2011-03-16 | (주)더리즈 | 반도체 발광 소자 |
WO2012026695A2 (en) * | 2010-08-27 | 2012-03-01 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved luminous efficiency |
TWI452730B (zh) * | 2010-09-14 | 2014-09-11 | Formosa Epitaxy Inc | 發光二極體 |
KR102056617B1 (ko) * | 2010-11-01 | 2019-12-17 | 삼성전자주식회사 | 반도체 발광소자 |
EP2448015B1 (en) * | 2010-11-01 | 2018-04-11 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
USD698743S1 (en) | 2012-12-07 | 2014-02-04 | Epistar Corporation | Light-emitting diode |
USD721663S1 (en) | 2013-08-02 | 2015-01-27 | Epistar Corporation | Light-emitting diode device |
US9666779B2 (en) * | 2013-11-25 | 2017-05-30 | Yangzhou Zhongke Semiconductor Lighting Co., Ltd. | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers |
USD733079S1 (en) * | 2014-04-30 | 2015-06-30 | Epistar Corporation | Light-emitting diode device |
CN104064653B (zh) * | 2014-07-04 | 2016-08-31 | 映瑞光电科技(上海)有限公司 | 发光二极管、封装基板结构及封装方法 |
USD743355S1 (en) * | 2014-07-22 | 2015-11-17 | Epistar Corporation | Light-emitting diode unit |
USD770397S1 (en) * | 2014-07-22 | 2016-11-01 | Epistar Corporation | Light-emitting diode unit |
JP6555043B2 (ja) * | 2015-09-18 | 2019-08-07 | 日亜化学工業株式会社 | 発光素子及び発光装置 |
USD783548S1 (en) * | 2015-11-05 | 2017-04-11 | Epistar Corporation | Portions of light-emitting device |
US10784407B2 (en) * | 2018-04-23 | 2020-09-22 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor light emitting element and nitride semiconductor light emitting device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2331625B (en) | 1997-11-19 | 2003-02-26 | Hassan Paddy Abdel Salam | led Lamp |
US6633120B2 (en) * | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
JP4083877B2 (ja) * | 1998-06-30 | 2008-04-30 | シャープ株式会社 | 半導体発光素子および半導体発光装置 |
US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6614056B1 (en) | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
JP3505643B2 (ja) * | 2000-04-19 | 2004-03-08 | 星和電機株式会社 | 窒化ガリウム系半導体発光素子 |
US6603152B2 (en) * | 2000-09-04 | 2003-08-05 | Samsung Electro-Mechanics Co., Ltd. | Blue light emitting diode with electrode structure for distributing a current density |
JP4810751B2 (ja) * | 2001-04-19 | 2011-11-09 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US7193245B2 (en) * | 2003-09-04 | 2007-03-20 | Lumei Optoelectronics Corporation | High power, high luminous flux light emitting diode and method of making same |
US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
JP4415575B2 (ja) | 2003-06-25 | 2010-02-17 | 日亜化学工業株式会社 | 半導体発光素子及びそれを用いた発光装置 |
KR100576853B1 (ko) * | 2003-12-18 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
US7064356B2 (en) * | 2004-04-16 | 2006-06-20 | Gelcore, Llc | Flip chip light emitting diode with micromesas and a conductive mesh |
JP2006156590A (ja) | 2004-11-26 | 2006-06-15 | Mitsubishi Cable Ind Ltd | 発光ダイオード |
KR100631969B1 (ko) | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
-
2007
- 2007-01-03 KR KR1020070000805A patent/KR100833311B1/ko active IP Right Grant
- 2007-12-21 US US12/003,276 patent/US8110847B2/en active Active
- 2007-12-25 JP JP2007331994A patent/JP2008166784A/ja active Pending
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2011
- 2011-04-18 JP JP2011091967A patent/JP5281110B2/ja active Active
Also Published As
Publication number | Publication date |
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KR100833311B1 (ko) | 2008-05-28 |
US8110847B2 (en) | 2012-02-07 |
JP2011142349A (ja) | 2011-07-21 |
US20080210972A1 (en) | 2008-09-04 |
JP2008166784A (ja) | 2008-07-17 |
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