TW201703295A - 發光元件 - Google Patents

發光元件 Download PDF

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TW201703295A
TW201703295A TW105104545A TW105104545A TW201703295A TW 201703295 A TW201703295 A TW 201703295A TW 105104545 A TW105104545 A TW 105104545A TW 105104545 A TW105104545 A TW 105104545A TW 201703295 A TW201703295 A TW 201703295A
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electrode
light
unit
insulating layer
insulating
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TW105104545A
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丁紹瀅
吳協展
黃靖恩
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新世紀光電股份有限公司
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Abstract

本發明提供一種發光元件,包含一發光單元、一電極單元,及一絕緣單元。該發光單元包括一發光體與一封裝膠體,該發光體以電致發光產生光能,且該封裝膠體形成於該發光體的部分表面。該電極單元包括分別形成於該發光體未形成有該封裝膠體的表面的一第一電極與一第二電極。該絕緣單元形成於該發光單元的表面,且包括一凸出於該第一電極與該第二電極之間的第一絕緣層。本發明提供的發光元件,可於後續利用錫膏電性連接於一外部電路板時,藉由該絕緣單元的設置而有效地解決因錫膏溢流而相互接觸所造成元件短路的問題。

Description

發光元件
本發明是有關於一種發光元件,特別是指一種具有高製程良率及元件信賴性的發光元件。
發光二極體(light emitting diode,LED)由於具有體積小、亮度高、反應時間短、壽命長等優點,因此,由發光二極體進行組裝所構成的發光元件,廣泛地被應用於照明、看板,或作為顯示器之背光源等領域。
現有的發光元件製程中,主要是先將發光二極體進行封裝後,再利用表面黏著技術(surface mount technology,SMT)將發光二極體焊接於印刷電路板(printed circuit board,PCB)上,形成電性通路,而製成發光元件。
一般而言,常見的表面黏著技術係利用錫膏(solder)將發光二極體電性連接於印刷電路板上,然而,目前以此方式進行連接常見的問題為,錫膏於接合或壓合的過程中,容易產生錫膏溢流,熔融之錫膏也因為軟化流動而相互接觸造成元件短路,進而使得發光元件失效。
因此,由上述的說明可知,發展出一種能克服上述缺點之發光元件,使該發光元件能兼顧製程良率、元件信賴性,是此技術領域的相關技術人員所待突破的課題。
因此,本發明之一目的,即在提供一種發光元件。
於是,本發明發光元件,包含一發光單元、一電極單元,及一絕緣單元。
該發光單元包括一發光體與一封裝膠體,該發光體以電致發光產生光能,且該封裝膠體形成於該發光體的部分表面。
該電極單元包括一第一電極與一第二電極,該第一電極與該第二電極分別形成於該發光體未形成有該封裝膠體的的表面。
該絕緣單元形成於該發光單元的表面,且包括一凸出於該第一電極與該第二電極之間的第一絕緣層。
本發明之功效在於,在將該發光元件利用錫膏電性連接於一外部電路板時,可藉由該絕緣單元有效地分隔錫膏,以解決因錫膏溢流而造成元件短路的問題,兼具提升製程良率、元件信賴性,以及降低生產成本等優勢。
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。有關本發明之技術內容、特點與功效,在以下的詳細說明中,將可清楚的呈現。
參閱圖1與圖2,本發明發光元件的一第一實施例包含一發光單元2、一電極單元3,及一絕緣單元4。
該發光單元2包括一發光體21、一封裝膠體22,及一透光基板23。該發光體21以電致發光產生光能且具有一第一面211、一反向於該第一面211的第二面212,及一連接該第一面211與第二面212的周面213。該封裝膠體22形成於該周面213及第一面211,且具有彼此反向的一第三面221及一第四面222,該發光體21是自該第四面222朝向該第三面221設置而被該封裝膠體22包覆。該透光基板23對應形成於該第一面211的上方,並與該封裝膠體22的第三面221連接。
該電極單元3包括一第一電極31,及一第二電極32,該第一電極31與該第二電極32分別形成於該發光體21的第二面212。
此處要說明的是,該發光單元2具有一出光面24,及一反向於該出光面24的底面25,其中,該發光體21的第二面212與該封裝膠體22的第四面222即為該底面25。該發光體21具有一N型半導體(圖未示)與一P型半導體(圖未示),且該第一電極31與該第二電極32分別電性連接該N型半導體與該P型半導體。詳細地說,該發光體21具有一N型半導體層、一形成於該N型半導體層上的發光層,及一形成於該發光層上的P型半導體層,其中,該第一電極31與該第二電極32則分別形成於該N型半導體層與該P型半導體層的表面。
該第一實施例中,由於該發光單元2與該電極單元3的細部結構及材料選用係為本技術領域者所周知,且非為本發明之主要技術特徵,因此不再多加贅述。
該絕緣單元4形成於該底面25,且包括一凸出該第一電極31與該第二電極32之間的第一絕緣層41。其中,該第一絕緣層41的材料選自絕緣材料,且可利用網印、UV固化、曝光顯影製程,或3D列印等方式形成於該第一電極31與該第二電極32之間。本發明該第一實施例設置該絕緣單元4的目的是於焊接的過程中,用以隔絕該第一電極31與該第二電極32上的錫膏,亦即該絕緣單元4所選用的絕緣材料是可耐製程高溫的材料。因此,該第一絕緣層41的材料包括但不限於環氧樹脂(epoxy resin)、光阻(photoresist)、塑膠、二氧化矽(silicon dioxide,SiO2 )、矽樹脂(silicone),或前述其中之一組合。該些材料皆具有優良的抗化性、耐熱性與機械性質。
於此還要說明的是,該第一絕緣層41於製作時,可如圖1所示,凸出於該第一電極31與該第二電極32之間,由於該第一絕緣層41所選用之材料本身即有防沾錫的功效,因此,該第一絕緣層41也可如圖3所示,與該第一電極31及第二電極32齊平,亦可達到相同的功效且具有節省成本的優點。
此外,還要說明的是,該第一絕緣層41除了可如圖1與圖2所示,形成於該第一電極31與該第二電極32之間且不與該第一電極31及第二電極32接觸,亦可如圖4與圖5所示,該第一絕緣層41可與該第一電極31及第二電極32接觸;亦或如圖6所示,該第一絕緣層41覆蓋部分的該第一電極31及第二電極32,其可依製程條件或成本考量等情況適時地進行調整,於此並無限制。
參閱圖7至圖9,本發明發光元件的一第二實施例與該第一實施例大致相同,其不同之處在於,該第二實施例不包含該透光基板23,進而可達到薄型化的設計趨勢,亦更加符合市場的需求。
參閱圖10,本發明發光元件的一第三實施例與該第一實施例大致相同,其不同之處在於,該絕緣單元4還包括至少一第二絕緣層42,該第二絕緣層42形成於該第一電極31與第二電極32的表面,並將該第一電極31與第二電極32分別區隔成至少二個第一電極區311與至少二個第二電極區321。圖10是以該絕緣單元4還包括一第二絕緣層42為例來做說明,但不限於此。此外,由於該第二絕緣層42的材料選擇及形成方式與該第一絕緣層41相同,於此不再多加說明。
此處要說明的是,該第一絕緣層41與第二絕緣層42的邊緣可與該發光體21的邊緣切齊(如圖2所示),亦或可延伸至該封裝膠體22的周緣,其可依製程條件或成本考量等情況適時的進行調整,於此並無限制。圖10是以該第一絕緣層41與第二絕緣層42分別延伸至該封裝膠體22的周緣為例來做說明,但不限於此。
此外,還要說明的是,本發明該第三實施例藉由該第二絕緣層42進一步將被該第一絕緣層41隔離的該第一電極31與第二電極32分別區隔成二個第一電極區311與二個第二電極區321,因此,可於後續電性連接於一外部電路板時,利用該等第一電極區311與第二電極區321達到對位的功能,進而使該發光元件可更精準的連接於該外部電路板上。
參閱圖11,本發明發光元件的一第四實施例與該第一實施例大致相同,其不同之處在於,該絕緣單元4還包括一第三絕緣層43,該第三絕緣層43形成於該封裝膠體22的第四面222,且與該第一絕緣層41相連接。具體地說,該第一絕緣層41與第三絕緣層43會凸出於該發光單元2與該電極單元3,並與該發光單元2和該電極單元3共同界定出二個凹槽44。
本發明該第四實施例則藉由該等凹槽44,於後續利用錫膏電性連接於一外部電路板時,除了可提供對位的功能外,還能將錫膏限制於該等凹槽44中,以防止錫膏溢流,亦可避免元件產生短路或漏電的情況。
於此要說明的是,該第一絕緣層41與第三絕緣層43除了可凸出於該發光單元2與該電極單元3,同樣地,如圖12所示,也可如前述該第一實施例所述,與該電極單元3齊平。
參閱圖13,本發明發光元件的一第五實施例與該第四實施例大致相同,其不同之處在於,該絕緣單元4還包括該第二絕緣層42,也就是說,該第三絕緣層43會與該第一絕緣層41與該第二絕緣層42相連接,且同該第四實施例所述,該第一絕緣層41、第二絕緣層42與第三絕緣層43會與該發光單元2和該電極單元3共同界定出四個凹槽44。
此外,還需說明的是,配合參閱圖14與圖15,本發明該第四實施例及第五實施例與該第二實施例相同也可不包含該透光基板23,以達到薄型化的設計趨勢。
參閱圖16與圖17,圖16與圖17是說明分別以本發明該第一實施例與第二實施例為例,將其電性連接於一外部電路板5上。於是,在將本發明該第一實施例與第二實施例接合於一外部電路板5的過程中,需先在該外部電路板5上配置複數個墊片51,再於該等墊片51上印刷錫膏52,再將本發明該第一實施例與第二實施例之發光元件電性連接於該外部電路板5上。
本發明該第一實施例至第五實施例所呈現不同態樣的發光元件,主要都是藉由該絕緣單元4而將該第一電極31與第二電極32隔離,以防止焊錫時錫膏溢流所造成元件短路的問題。因此,可有效地提升製程良率與元件信賴性,進而可因產品良率的提升而達到降低生產成本的優點。另一方面,本發明該發光元件還能藉由該第一絕緣層41與第二絕緣層42的設置,彈性地調整該第一電極區311與第二電極區321的數量,以配合產品的種類或後續對位組裝製程的需求。
綜上所述,本發明發光元件藉由該絕緣單元4的設置,可於後續電性連接於該外部電路板5時,防止因錫膏52溢流而相互接觸所造成元件短路的問題,兼顧高製程良率、元件信賴性,以及低成本等優勢。因此,確實能達到本發明之目的。
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
2‧‧‧發光單元
21‧‧‧發光體
211‧‧‧第一面
212‧‧‧第二面
213‧‧‧周面
22‧‧‧封裝膠體
221‧‧‧第三面
222‧‧‧第四面
23‧‧‧透光基板
24‧‧‧出光面
25‧‧‧底面
3‧‧‧電極單元
31‧‧‧第一電極
311‧‧‧第一電極區
32‧‧‧第二電極
321‧‧‧第二電極區
4‧‧‧絕緣單元
41‧‧‧第一絕緣層
42‧‧‧第二絕緣層
43‧‧‧第三絕緣層
44‧‧‧凹槽
5‧‧‧外部電路板
51‧‧‧墊片
52‧‧‧錫膏
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一剖視圖,說明本發明發光元件的一第一實施例; 圖2是一以圖1為例的俯視圖,說明本發明該第一實施例; 圖3是一剖視圖,說明本發明該第一實施例的其中一態樣; 圖4是一剖視圖,說明本發明該第一實施例的另一態樣; 圖5是一以圖4為例的俯視圖,說明本發明該第一實施例的另一態樣; 圖6是一剖視圖,說明本發明該第一實施例的又一態樣; 圖7是一剖視圖,說明本發明發光元件的一第二實施例; 圖8是一剖視圖,說明本發明該第二實施例的另一態樣; 圖9是一剖視圖,說明本發明該第二實施例的又一態樣; 圖10是一俯視圖,說明本發明發光元件的一第三實施例; 圖11是一立體圖,說明本發明發光元件的一第四實施例; 圖12是一立體圖,說明本發明該第四實施例的另一態樣; 圖13是一立體圖,說明本發明發光元件的一第五實施例; 圖14是一類似於圖11的立體圖,說明本發明該第四實施例不包含該透光基板的結構態樣; 圖15是一類似於圖13的立體圖,說明本發明該第五實施例不包含該透光基板的結構態樣; 圖16是一剖視圖,說明以本發明該第一實施例電性連接於一外部電路板的實施態樣; 圖17是一剖視圖,說明以本發明該第二實施例電性連接於該外部電路板的實施態樣。
2‧‧‧發光單元
21‧‧‧發光體
211‧‧‧第一面
212‧‧‧第二面
23‧‧‧透光基板
24‧‧‧出光面
25‧‧‧底面
3‧‧‧電極單元
213‧‧‧周面
22‧‧‧封裝膠體
221‧‧‧第三面
222‧‧‧第四面
31‧‧‧第一電極
32‧‧‧第二電極
4‧‧‧絕緣單元
41‧‧‧第一絕緣層

Claims (10)

  1. 一種發光元件,包含: 一發光單元,包括一發光體與一封裝膠體,該發光體以電致發光產生光能,且該封裝膠體形成於該發光體的部分表面; 一電極單元,包括一第一電極與一第二電極,該第一、二電極分別形成於該發光體未形成有該封裝膠體的的表面;及 一絕緣單元,形成於該發光單元的表面,且包括一凸出於該第一電極與該第二電極之間的第一絕緣層。
  2. 如請求項第1項所述的發光元件,其中,該發光體具有一第一面、一反向於該第一面的第二面,及一連接該第一面與第二面的周面,該封裝膠體形成於該發光體的周面及第一面,且該電極單元形成於該第二面。
  3. 如請求項第2項所述的發光元件,其中,該封裝膠體具有彼此反向的一第三面及一第四面,該發光體是自該第四面朝向該第三面設置而被該封裝膠體包覆。
  4. 如請求項第3項所述的發光元件,其中,該絕緣單元還包括至少一第二絕緣層,且該至少一第二絕緣層將該第一電極與第二電極分別區隔成至少二個第一電極區與至少二個第二電極區。
  5. 如請求項第3項所述的發光元件,其中,該絕緣單元還包括一第二絕緣層,且該第二絕緣層將該第一電極與第二電極分別區隔成二個第一電極區與二個第二電極區。
  6. 如請求項第5項所述的發光元件,其中,該絕緣單元還包括一第三絕緣層,該第三絕緣層形成於該封裝膠體的第四面,且與該第一、二絕緣層相連接。
  7. 如請求項第3項所述的發光元件,其中,該絕緣單元還包括一第三絕緣層,該第三絕緣層形成於該封裝膠體的第四面,且與該第一絕緣層相連接。
  8. 如請求項第3項所述的發光元件,其中,該發光單元還包括一透光基板,該透光基板對應形成於該發光體之第一面的上方,並與該封裝膠體的第三面連接。
  9. 如請求項第3項所述的發光元件,其中,該發光體具有一N型半導體及一P型半導體,該第一電極與該第二電極分別電性連接於該N型半導體及該P型半導體。
  10. 如請求項第1項所述的發光元件,其中,該絕緣單元的材料包括環氧樹脂、光阻、塑膠、二氧化矽、矽樹脂,或前述其中之一組合。
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Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
TWI783385B (zh) 2016-08-18 2022-11-11 新世紀光電股份有限公司 微型發光二極體及其製造方法
US10580932B2 (en) 2016-12-21 2020-03-03 Nichia Corporation Method for manufacturing light-emitting device
KR20180081371A (ko) * 2017-01-06 2018-07-16 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
CN108336075B (zh) * 2017-01-20 2020-03-27 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块及其成形方法
US10497845B2 (en) * 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
TWI774927B (zh) * 2018-02-20 2022-08-21 晶元光電股份有限公司 發光元件及其製作方法
CN108550679A (zh) * 2018-04-16 2018-09-18 绍兴职业技术学院 一种白光数码管显示器件及其封装工艺
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
TW202341525A (zh) * 2019-03-21 2023-10-16 晶元光電股份有限公司 發光元件
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN215989229U (zh) * 2020-02-10 2022-03-08 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
US20230154902A1 (en) * 2020-07-16 2023-05-18 Enkris Semiconductor, Inc. Semiconductor structure and manufacturing method therefor
KR20220073541A (ko) * 2020-11-26 2022-06-03 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
EP1928034A3 (en) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
TWI281269B (en) * 2003-12-02 2007-05-11 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
KR20070041411A (ko) * 2004-07-12 2007-04-18 로무 가부시키가이샤 반도체 발광 소자
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体発光素子
CN100369277C (zh) * 2004-12-28 2008-02-13 中华映管股份有限公司 发光二极管
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
US8022419B2 (en) * 2005-12-19 2011-09-20 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
KR20090085594A (ko) * 2006-10-05 2009-08-07 미쓰비시 가가꾸 가부시키가이샤 GaN 계 LED 칩을 사용하여 이루어지는 발광 장치
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI338383B (en) * 2006-12-18 2011-03-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するiii族窒化物系化合物半導体発光素子
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
CN101855735A (zh) * 2007-11-19 2010-10-06 松下电器产业株式会社 半导体发光装置及半导体发光装置的制造方法
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技(广州)有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
CN102754229B (zh) * 2010-02-09 2016-07-06 日亚化学工业株式会社 发光装置、及发光装置的制造方法
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
WO2012026068A1 (ja) * 2010-08-24 2012-03-01 パナソニック株式会社 発光素子
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI435471B (zh) * 2010-11-16 2014-04-21 Epistar Corp 發光二極體晶粒及其製法
US20140009905A1 (en) * 2010-12-16 2014-01-09 Sharp Kabushiki Kaisha Fluorescent substrate, display apparatus, and lighting apparatus
US9136432B2 (en) * 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
EP2701214A4 (en) * 2011-04-20 2014-11-26 Elm Inc LIGHT-EMITTING DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
TWI606618B (zh) * 2012-01-03 2017-11-21 Lg伊諾特股份有限公司 發光裝置
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Led封裝件及其製法
JP2015531995A (ja) * 2012-07-10 2015-11-05 東芝テクノセンター株式会社 発光ダイオード装置およびその製造方法
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102931314B (zh) * 2012-09-29 2015-02-11 安徽三安光电有限公司 一种防止金属迁移的半导体发光器件
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP5611492B1 (ja) * 2012-12-10 2014-10-22 シチズンホールディングス株式会社 Led装置及びその製造方法
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
CN106252489A (zh) * 2013-05-13 2016-12-21 新世纪光电股份有限公司 发光二极管封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックIpマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子(广州)有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光(北京)科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

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