CN101855735A - 半导体发光装置及半导体发光装置的制造方法 - Google Patents
半导体发光装置及半导体发光装置的制造方法 Download PDFInfo
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- CN101855735A CN101855735A CN200880115867A CN200880115867A CN101855735A CN 101855735 A CN101855735 A CN 101855735A CN 200880115867 A CN200880115867 A CN 200880115867A CN 200880115867 A CN200880115867 A CN 200880115867A CN 101855735 A CN101855735 A CN 101855735A
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Abstract
来自半导体发光元件的光朝着各个方向行进。为此,无法有效地利用朝照明方向以外的方向行进的光。虽然提出了将半导体发光元件的侧面加工成倾斜面并在该侧面上形成反射层的解决方法,但由于是利用蚀刻等方法来形成倾斜面,因而存在加工费时、难于控制倾斜面的问题。为了解决该问题,本发明公开了一种半导体发光装置及半导体发光装置的制造方法。在次载具上设置半导体发光元件,用密封材密封后,进行在相邻的半导体发光元件之间形成槽的加工。通过向已形成的槽中填充反射材,研磨出光面并进行切割,便能够获得在侧面形成了反射层的半导体发光装置。
Description
技术领域
本发明涉及一种为有效地利用从半导体发光元件的侧面射出的光,在密封材的侧面设置了反射层的半导体发光元件及使用了该半导体发光元件的半导体发光装置。
背景技术
半导体发光元件从发光层射出光,该发光层是由夹着活性层的p型半导体及n型半导体形成的。为此,光会朝四面八方射出。不过,作为光源来说,大多希望光朝一个方向照射。在这种情况下,朝着与照射方向不同的方向行进的光就成为无用光。若考虑到光的有效利用,则优选使这些光朝半导体发光元件的出光面方向反射。
针对上述问题,提出了使半导体发光元件的侧面朝出光面方向倾斜的方法。例如,在专利文献1中,公开了具有在电极上经加工而倾斜且设置有反射层的侧面的半导体发光元件。该半导体发光元件是在发光层的两面形成有电极的元件。还有,为了提高来自发光层的光的取出效率,在后面的工序中利用激光剥离掉在形成发光层时使用的蓝宝石基板。
还有,在专利文献2中,公开了下述半导体发光元件,即:在透明基板的一面形成电极,为了不让发光层生成的光照射该电极,在成为出光面相反面的底面形成了具有倾斜角度的斜面。
这些是用蒸镀膜等金属薄膜构成反射层的示例。不过,为了用金属薄膜等构成反射层,而需要在真空室内进行处理,因此不能称之为适用于批量生产的方法。
作为其它的解决方案,存在下述方法,即:并不是在半导体发光元件本身的侧面设置反射层,而是在进一步包括引线框(lead frame)和密封材而构成的发光器件(下面称作“发光装置”)的侧面形成反射层,使来自侧面的光射向出光面。
作为这样的解决方案,在专利文献3中,公开了一种在密封半导体发光元件的密封树脂的侧面具有反射框的半导体发光元件。
图14是表示该半导体发光装置的剖视图。在引线框90上形成的半导体发光元件92经由接合线(bonding)94与另一引线框96电连接。并且,整个被树脂98密封起来,在其侧面设置了反射框100。通过成为这样的结构,而构成了半导体发光装置,使来自侧面的光反射,然后从出光面取出该反射光。
专利文献1:日本公开特许公报特开2006-128659号公报
专利文献2:日本公开特许公报特开平6-268252号公报
专利文献3:日本公开特许公报特开2005-26400号公报
-发明所要解决的技术问题-
如专利文献1和专利文献2所示,在半导体发光元件本身的侧面形成反射层的方法需要在真空室内进行成膜处理,因而未必能称其为适合批量生产的方法。
另一方面,专利文献3中的半导体发光装置仅经由在空气中进行的制造工序就能制作出来。不过,因为半导体发光元件本身的尺寸为数百μm到数mm左右,所以反射框的尺寸也就约为数mm。将这样大小的反射框安装到各个半导体发光元件上并不是一件容易的事情。
发明内容
本发明是为了解决上述问题而发明出来的,其目的在于:提供一种在密封材侧面的整个面上形成反射层,使发光效率提高的半导体发光装置及其制造方法。
-用以解决技术问题的技术方案-
为了解决上述问题,本发明提供了一种如下所示的半导体发光装置,该半导体发光装置具有:半导体发光元件、载有所述半导体发光元件的次载具(submount)、在所述次载具上密封所述半导体发光元件的密封材以及在将所述密封材的出光面作为上表面时设置在该密封材侧面的反射层。
还有,作为这种半导体发光装置的制造方法,提出了下述方法,即:该半导体发光装置的制造方法具有:在次载具用基板上固定多个半导体发光元件的工序、用密封材密封所述半导体发光元件的工序、向所述半导体发光元件之间填充反射材的工序、研磨所述密封材表面的工序以及在填充有所述反射材的部分将反射材及次载具用基板切断的工序。
-发明的效果-
本发明的半导体发光装置因为在密封材的侧面形成有反射层,所以从设置在密封材内的半导体发光元件射出的光由于在密封材和反射层之间的界面形成的反射面而进行反射。为此,从半导体发光装置的侧面射出的光减少,能够获得接近理想的面发光的特性。
还有,利用在空气中进行的制造工序就能够制作出本发明的半导体发光装置。而且,若在次载具用基板上装载好一个个半导体发光元件,便能够统一地对次载具用基板形成密封材和反射层,因而量产性提高。
附图说明
图1是表示本发明的半导体发光装置的结构的图。
图2是表示本发明的半导体发光装置的其它实施方式的结构的图。
图3是表示本发明的半导体发光元件的剖视图。
图4是从出光面一侧所看到的本发明的半导体发光元件的俯视图。
图5是表示本发明的半导体发光元件的制造方法的图。
图6是表示本发明的半导体发光装置的制造方法的图。
图7是表示本发明的半导体发光装置的制造方法的图。
图8是表示在图7(A)的工序时从上方观察次载具用基板的状态的图。
图9是表示本发明的半导体发光装置的其它制造方法的图。
图10是表示本发明的半导体发光装置的其它制造方法的图。
图11是表示本发明的半导体发光装置的其它制造方法的图。
图12是表示本发明的半导体发光装置的其它结构的图。
图13是表示图12中的本发明的半导体发光装置的制造方法的图。
图14是表示现有的半导体发光装置的剖视图。
-符号说明-
1-半导体发光装置;10-半导体发光元件;11-基板;12-n型层;13-活性层;14-p型层;16-n侧电极;17-p侧电极;20-支撑体;21-次载具;22-n侧引出电极;23-p侧引出电极;24-n侧凸块;25-p侧凸块;26、27-通孔;35-荧光体层;36-出光面;38-密封材;40-反射层;43-反射材;50-槽;57-已施加防反射处理的出光面;210-次载具用基板。
具体实施方式
(第一实施方式)
在图1中示出了本发明的半导体发光装置1。半导体发光装置1的结构是在次载具21上固定有半导体发光元件10。
下面,对使用了倒装片(flip chip)型半导体发光元件的情况进行说明,不过本发明的半导体发光装置并不依存于半导体发光元件的类型。也就是说,即便是使用底面朝上(face-up)、单面电极及双面电极等类型的半导体发光元件也无妨。
在次载具21上形成有引出电极22、23。引出电极是用来向半导体发光元件10导通电流的电极,具有与半导体发光元件的n型层一侧连接的n侧引出电极22及与p型层一侧连接的p侧引出电极23。而且,在图1中,引出电极经由通孔26、27与背面电极28、29连接。由此,能够使电流从背面电极28、29流向半导体发光元件。此外,背面电极具有n侧背面电极28和p侧背面电极29。
在引出电极上形成有凸块24、25。与引出电极一样,凸块也具有与n型层连接的n侧凸块24及与p型层连接的p侧凸块25。在图1中存在多个p侧凸块,总括起来用符号25来表示这些p侧凸块。当然也可以具有多个n侧凸块。
经由该凸块将引出电极和半导体发光元件直接连接起来。因此,该凸块就是连接线。将包括次载具、引出电极、背面电极、通孔及凸块的整体称作支撑体20。此外,根据实施方式的情况,有时也能够从支撑体20中省略背面电极、通孔、凸块。
可以在半导体发光元件10的周围设置荧光体层35。在荧光体层35中分散着一种或多种荧光体。并且,使来自半导体发光元件10的光进行波长转换后射出。由此,半导体发光装置1能够射出各种颜色的光。
在荧光体层35的周围设置有透明的密封材38。密封材38是介质或者是通过使功能性材料分散到介质中而得到的。密封材通过覆盖半导体发光元件,来保护半导体发光装置1。能够用硅树脂、环氧树脂及以氟树脂为主要成分的树脂作为能用作密封材的介质。特别是,优选的硅树脂有硅氧烷系树脂、聚烯烃、硅-环氧复合(silicone-epoxy hybrid)树脂等。
还有,不仅能用树脂作为介质,还能够使用由溶胶凝胶法制得的玻璃材料作为该介质。具体来说,该介质是由通式Si(X)n(R)4-n(n=1~3)表示的化合物。在此,R是烷基,X是从卤素(Cl、F、Br、I)、羟基(-OH)、烷氧基(-OR)中选出的。在该玻璃材料中还能够添加功能性材料或由通式M(OR)n表示的烷氧化物。通过添加烷氧化物,而能够改变密封材本身的折射率。
还有,这些玻璃材料中还存在固化反应温度在摄氏200度左右的材料,即使考虑到用于凸块或电极各部分的材料的耐热性时,也能称其为优选的材料。
还有,分散在介质中的功能性材料并没有被特别限定。不过,因为密封材存在于半导体发光元件和密封材的出光面之间,所以使透光率降低的材料及尺寸是不适用的。例如,在一个优选的示例中,若使氧化硅的微粒作为功能性材料分散在介质中并以此作密封材的话,则能使半导体发光元件发出的光在密封材内均匀地扩散开,所以能够使密封材的出光面呈面状均匀地发光。
密封材的表面成为半导体发光装置1的出光面36。通过使出光面36成为平坦面,就能够获得面发光。不过,由于密封材38和空气之间的折射率的关系,若设为完全镜面的话,有时会由于全反射而导致半导体发光装置的光取出效率下降。为了避免上述情况,能够使出光面36具有微小的凹凸结构。
在本发明的半导体发光装置中,在密封材的侧面进一步设置有反射层40。反射层40使从半导体发光元件10射出后朝向侧面的光很难从侧面射出。因此,反射层40也可以不进行镜面反射。
例如,可以将使微细粉末分散在介质中而获得的材料用于反射层,使得照射到反射层40的光X成为散射光。
能够适当地用树脂、玻璃等作为能用于反射层40的介质。具体来说,能够使用已作为所述密封材的介质介绍过的材料。
还有,能够适当地用氧化钛、氧化铝等金属氧化物、金、银、镍等金属微细粉末或者特氟纶(注册商标)等白色系树脂微细粉末作为所能使用的微细粉末。
特别是因为氧化钛能够提高反射层的反射率,所以优选用氧化钛作为该微细粉末。通过将分散在反射层中的氧化钛的重量浓度设定在10%~80%的范围内,并适当地调整反射层的厚度,由此能够保持较高的反射率。为了调整用于反射层的介质的粘度,也可以使氧化硅、氧化铝的微细粉末与氧化钛同时分散到介质中。
因为存在所述反射层40,所以在从半导体发光元件射出的光中朝侧面方向行进的光照射到反射层40后,就会朝大致与入射角相对应的反射角方向反射。
反射层40设置在密封材38的侧面的至少一部分上。当然,优选的是将反射层40设置在侧面的整个面上。特别是在密封材38的高度方向上都存在反射层为好。这是为了防止光从侧面漏出。换言之,到与密封材38的一部分即出光面36齐平的位置为止都存在反射层40。
还有,反射层40与密封材38和次载具21都接触。这是因为通过使反射层40与次载具21接触,而能够将密封材38的整个侧面覆盖起来。
反射层40与密封材38之间的界面就是反射面41。反射面41与次载具21的表面19之间的关系并没有被特别限定。不过,若垂直于表面19或与表面19成钝角的话,则能更加容易地使光朝出光面36的方向反射,因此很理想。
图2是表示在反射面41与次载具21的表面19成钝角42的情况下半导体发光装置的剖视图。若反射面41与次载具的表面成为图2所示的角度,则来自半导体发光元件10的光将进一步朝出光面36的方向反射,由此使得发光效率提高。
此外,在次载具上还可以载有半导体发光元件以外的其它元件。例如,在次载具为氮化铝等陶瓷的情况下,可以载着例如二极管、电阻器、保护电路等保护用元件。
下面,对次载具和半导体发光元件进行详细的说明。
能够将硅稳压二极管、硅二极管、硅、氮化铝、氧化铝及其它陶瓷等作为次载具21。
通孔是贯穿次载具的贯通孔,在内部包含铜、铝、金等导电材料。背面电极28、29与通孔电连接,该背面电极28、29是由铜、银、金等导电材料制成的。引出电极使用铜、铝、金、银等导电性材料。
凸块具有将半导体发光元件10固定在次载具21上且使该半导体发光元件10与引出电极22、23之间电连接起来的作用。
能够用金、金一锡、焊料、铟合金、导电性聚合物等作凸块的材料,特别优选金或以金为主要成分的材料。能够使用这些材料经由镀金属法、真空蒸镀法、丝网印刷法、液滴射出法、打线凸块(wire bump)法等形成凸块。
例如,在使用打线凸块法的情况下,先制作金线,用接合器将金线的一端接合在次载具上的引出电极上,然后切断金线,形成金凸块。还能够使用液滴射出法,即:利用与喷墨印刷相同的方法,用将金等高导电性材料的微粒纳米粒子分散在挥发性溶剂中而得到的液体进行印刷,然后使溶剂挥发以除去该溶剂,从而形成作为纳米粒子聚合体的凸块。
图3是半导体发光元件10的剖视图,图4是从基板上部方向所看到的俯视图。半导体发光元件10由基板11、n型层12、活性层13、p型层14、n侧电极16及p侧电极17构成。
基板11起保持发光层的作用。能够用具有绝缘性的蓝宝石作为该基板11的材料。不过,当考虑到发光效率及发光部分是以氮化镓(GaN)作基材的情况时,为了减少在n型层12和基板11之间的界面的光反射,优选使用与发光层具有相同折射率的GaN、SiC、AlGaN、AlN。
成为发光层的n型层12、活性层13及p型层14依次叠层在基板11上。并未特别对它们的材料加以限制,不过优选的材料为氮化镓系化合物。具体来说,能够列举出GaN的n型层12、InGaN的活性层13、GaN的p型层14。此外,也可以将AlGaN或InGaN作为n型层12、p型层14的材料,还能够在n型层12和基板11之间设置由GaN或InGaN构成的缓冲层。还有,例如活性层13也可以成为使InGaN和GaN交替叠层起来的多层结构(量子阱结构)。
从这样叠层在基板11上的n型层12、活性层13及p型层14的一部分中,除去活性层13和p型层14,使n型层12露出。在该露出的n型层12上形成的就是n侧电极16。此外,在用导电性材料制作基板11的情况下,也可以连基板都露出来,在基板上直接形成n侧电极。
还有,在p型层14上同样形成有p侧电极17。也就是说,通过除去活性层13和p型层14,使n型层12露出,从而能够在基板的同一侧的面上形成发光层、p侧电极及n侧电极。
为了使发光层发出的光朝基板11一侧反射,用反射率较高的Ag、Al、Rh等的第一电极作p侧电极17。也就是说,基板11的顶面一侧成为出光面18。为了降低p型层14和p侧电极17的欧姆接触电阻,更优选在p型层14和p侧电极17之间设置Pt、Ni、Co、ITO等的电极层。还有,能够将Al、Ti等作为n侧电极16的材料。为了提高与凸块的接合强度,优选将Au或Al用于p侧电极17及n侧电极16的表面。能够利用真空蒸镀法、溅射法等形成这些电极。
没有特别限定半导体发光元件10的尺寸,不过,为了增大光量,使用总面积大的元件为好,优选一边(8及9)在600μm以上。还有,半导体发光元件10的一边(8或9)也可以比其它边长。这是因为在半导体发光元件的用途中也包括用于手机、移动计算机等中的情况,所以也需要长方形的发光装置。
此外,作为半导体发光元件的示例,对倒装片型半导体发光元件进行了详细的说明,不过在本发明的半导体发光装置中,半导体发光元件可以是任意类型的元件。
下面,对荧光体层35进行说明。荧光体层35是使无机或有机荧光体材料的粒子分散到树脂或玻璃等透明介质中而制得的。
例如,在半导体发光元件10发出蓝色光,而要使半导体发光装置1本身的发光色为白色的情况下,荧光体就会接收来自半导体发光元件10的蓝色光,经由波长转换让该蓝色光成为黄色光后射出。优选掺杂稀土元素的氮化物系或掺杂稀土元素的氧化物系荧光体作这种荧光体材料。更具体地说,能够适当地使用掺杂稀土元素的碱土金属硫化物、掺杂稀土元素的石榴石的(Y·Sm)3(Al·Ga)5O12:Ce或(Y0.39Gd0.57Ce0.03Sm0.01)3Al5O12、掺杂稀土元素的碱土金属原硅酸盐、掺杂稀土元素的镓硫化物、掺杂稀土元素的铝酸盐等。还有,也可以用硅酸盐荧光体(Sr1-a1-b2-xBaa1Cab2Eux)2SiO4或α-赛隆(α-sialon:Eu)Mx(Si,Al)12(O,N)16作黄色光的荧光体材料。
作为介质,能够使用已作为所述密封材介绍过的介质。举例来说,能够使用硅树脂、环氧树脂及以氟树脂为主要成分的树脂或者利用溶胶凝胶法制得的玻璃材料。还有,这些玻璃材料中还存在固化反应温度在摄氏200度左右的材料,即使考虑到用于凸块或电极各部分的材料的耐热性时,也能称其为优选的材料。将荧光体和介质混合起来的混合物称作荧光体涂料。
在图5中示出了制作本发明的半导体发光装置的制造方法。在要成为次载具21的次载具用基板210上形成引出电极22、23。根据需要也可以事先形成通孔、背面电极。在引出电极22、23上形成有凸块24、25。并且,焊接上半导体发光元件10(图5(A))。
在次载具用基板210上形成有多个半导体发光元件。由此,一次就能够获得很多半导体发光装置。
接着,形成荧光体层35。荧光体层35是通过在半导体发光元件10上涂敷荧光体涂料而形成的。形成方法并没有被特别限定,不过利用印刷来涂敷荧光体涂料的方法不仅简单,而且制作时间短(图5(B))。
在图6中示出了接下来的工序。在形成了荧光体层以后,在次载具用基板210的整个面上形成密封材38(图6(A))。在此,对用树脂作密封材的示例进行说明。密封材的形成方法并没有被特别限定。若使密封树脂成为液态后与溶剂一起进行涂敷,并使其干燥的话,就能够以短时间且高厚度精度进行密封树脂的涂敷。此外,并不是一定要形成荧光体层。这是因为存在直接使用半导体发光元件的发光色的情况。
接着,进行在半导体发光元件之间形成槽的槽加工(图6(B))。已形成的槽50就成为用来填充反射材的空间。在槽加工的过程中能够适当地使用切割机等。通过使次载具用基板210成为水平状态后再进行槽加工,便能够形成与次载具的表面垂直的反射面。另外,这时通过将次载具用基板210设置成倾斜于切割机的状态,就能够形成与次载具用基板210具有角度的反射面。
例如,在图6(A)中,如果使次载具用基板210向左倾斜(抬高右侧)后,在各个半导体发光元件的左侧进行槽加工,然后再使次载具用基板210向右倾斜后,在各个半导体发光元件的右侧进行槽加工的话,便能够形成与次载具表面成钝角的反射面。图2中的半导体发光装置就是这样制成的。
不仅使槽50形成在密封材中,还使该槽50形成到次载具用基板210中为好。这是为了用反射材确实地将密封材的侧面部分覆盖起来。在半导体发光元件的四条边进行槽加工。这是为了在密封材的四个侧面都形成反射面。不过,在由于其它原因等而有意识地不对某些侧面形成反射面的情况下,也可以不对该面进行槽加工。
若槽加工结束,就向槽50填充反射材43(图6(C))。此外,反射材43固化后,便形成反射层40。填充方法并没有被特别限定。例如,可以通过在密封材的上表面上整面地涂敷反射材来进行填充。还能够利用滴下、印刷、喷涂、旋涂等方法进行填充。
在图7中示出了接下来的工序。在填充了反射材43以后,对密封材38的上表面进行研磨(图7(A))。通过向槽50填充反射材43后再研磨密封材的上表面,使得反射层具有与密封材的出光面36齐平的面。研磨方法并没有被特别限定。能够适当地使用研磨机等。还有,并不是一次只能用一种大小的研磨粒进行研磨,而是可以边依次改变研磨粒的大小边进行研磨。
在图8中示出从出光面一侧所看到的状态。设置在次载具用基板210上的半导体发光装置是以上下左右均为等间距的方式设置好的。能够看到出光面36,用虚线围成的四边形表示荧光体层35。在各个半导体发光装置之间填充有反射材43。由此,本发明的半导体发光装置能够进行面发光。
返回到图7,接着在反射材43之间进行切割,便制成了一个个半导体发光装置1(图7(B))。
(第二实施方式)
在第一实施方式中,如图6(A)及图6(B)所示,在设有半导体发光元件的次载具用基板210的整个面上形成了密封材38,然后进行了槽加工。该方法是能够用短时间进行大量处理的方法。不过,因为要在次载具用基板210的整个面上形成密封材,所以存在密封材固化时应力增大的情况。若应力过大,就会出现次载具用基板弯曲或者在形成了密封材的部分产生裂痕的情况。因此,也可以对应各个半导体发光元件中的每一个元件形成密封材。
在图9中示出了本发明的半导体发光装置的制造方法的一部分。图9(A)是与图6(A)相对应的图,图9(B)与图6(B)相同。在本实施方式的制造方法中,除了图9(A)所示的密封材的形成方法以外,其余都可以与第一实施方式的制造方法相同。
在本实施方式中形成了荧光体层35后,对应着各个半导体发光元件中的每一个元件形成密封材。或者,也可以在排列成图8所示的半导体发光元件阵列的情况下,沿横向或纵向连续地形成密封材。这是因为只要不一次形成整面的密封材,就能减小树脂固化时的应力。
利用本实施方式的制造方法,便能够获得与在第一实施方式中制作出来的半导体发光装置一样的装置。
(第三实施方式)
在本实施方式中,对能够减少工序数的制造方法进行说明。
参照图10,在次载具用基板210上形成引出电极22、23后,进一步形成凸块24、25,然后设置半导体发光元件10(图10(A))。在半导体发光元件10的周围也形成有荧光体层35(图10(B))。上述工序与第一实施方式相同。
然后,对应着各个半导体发光元件中的每一个元件形成密封材38(图10(C))。形成方法并没有被特别限定。不过,利用印刷等形成密封材的方法既简便又快捷。
在图11中示出了接下来的工序。在形成了密封材后,在次载具用基板210的整个面上利用涂敷的方法形成反射材43(图11(A))。在本实施方式中没有进行槽加工。
经由研磨形成了成为出光面36的面(图11(B))。这一结果与图8相同。接着,切断填充有反射材43的部分(图11(C))。经由上述工序,就能够获得在侧面形成有反射层的半导体发光装置。
在本实施方式所示的半导体发光装置的制造方法中,能够省去进行槽加工的工序,因此用更短的时间就能制造出半导体发光装置。不过,反射面41会直接反映出密封材形成时的形状。为此,存在次载具21与反射面所成的角小于直角的情况。
(第四实施方式)
在图12中示出了本实施方式所涉及的半导体发光装置。在本实施方式中,在出光面36的表面形成有已施加防反射处理的出光面57。通过施加防反射处理,能够防止在密封材38内行进的光中以小角度入射到出光面的光进行全反射,使得来自半导体发光装置的光的取出效率提高。
在图13中示出了半导体发光装置的制造方法。在次载具用基板210上设置半导体发光元件,并在形成了荧光体层35以后,用密封材进行密封。然后,进行槽加工,填充反射材43,直到研磨出光面36为止都与第一实施方式中的图7(A)所示的方法相同。
根据本发明的制造方法,此后在出光面36的整个面上形成具有微小凹凸结构的已施加防反射处理的出光面57(图13(A))。微小凹凸结构能够防止光在出光面进行全反射,从而使光的取出效率提高。之所以在整个面形成微小凹凸结构是因为对应着各个半导体发光装置中的每一个装置形成该微小凹凸结构是很繁琐的。
若利用应用了纳米压印技术的微细加工来形成微小凹凸结构,则能够形成与光的波长大致相等的微细图案,或者能够根据所使用的光的波长形成小于光波长的微细图案。还能够形成形状为槽状、锥状、半圆球状等的各种图案。此外,进行纳米压印的面要为平坦面,由出光面36和反射材43构成的研磨面是非常平坦的,因而能够形成高精度的微细图案。在进行纳米压印的情况下,通过在出光面36上薄薄地涂敷液体状树脂后,将模具按压在其上,然后使所涂敷的树脂进行热固化或紫外线固化,由此来转印形成在模具面上的凹凸形状。
在出光面36是由无机密封材形成的情况下,通过在出光面36上涂敷PMMA(聚甲基丙烯酸甲酯)等聚合物抗蚀剂,利用纳米压印等形成抗蚀剂的微细图案后,以其作掩膜,用CF4等气体进行蚀刻,由此在出光面36上形成凹凸形状。利用蚀刻来形成表面的凹凸形状的方法不仅工序简单,而且还能够提高光的取出效果。不过,很难准确地控制凹凸形状,还具有无法在多个基板的表面上形成完全相同的凹凸形状的特性。
也能够通过调节在研磨工序(图7(A))的最后所使用的研磨粒的粒度,从而在研磨结束的状态下,使基板表面具有一定程度的表面粗糙度,以作为基板表面的凹凸结构。
还能够利用喷墨印刷法,在基板表面制作凹凸结构。该方法因为不包含对基板进行蚀刻的工序,所以很容易就能够加以使用。通过对所制作的凹凸结构本身的折射率进行调整,就能够获得光取出效果。并且,在出光面36形成了微小凹凸结构以后,切断反射材43的部分,就能获得本实施方式所涉及的半导体发光装置(图13(B))。
此外,由于界面处折射率的关系而产生全反射,使光取出效率下降的问题不仅是在出光面36与大气之间存在的问题,就是在半导体发光元件的出光面18和荧光体层35之间的界面以及荧光体层35和密封材38之间的界面也存在该问题。因此,也可以对半导体发光元件的出光面18、荧光体层的出光面施加防反射处理。
此外,在本说明书的整个范围内,Cl表示氯,F表示氟,Br表示溴,I表示碘,Al表示铝,Ga表示镓,Si表示硅,In表示铟,N表示氮,O表示氧,Ag表示银,Rh表示铑,Pt表示铂,Ni表示镍,Co表示钴,Ti表示钛,Au表示金,Y表示钇,Sm表示钐,Ce表示铈,Gd表示钆,Sr表示锶,Ba表示钡,Ca表示钙,Eu表示铕。
-产业实用性-
本发明能够用于在密封材的侧面形成反射层,发光效率高的半导体发光装置。
Claims (15)
1.一种半导体发光装置,其特征在于:
具有:
半导体发光元件,
次载具,载着所述半导体发光元件,
密封材,在所述次载具上对所述半导体发光元件进行密封,以及
反射层,在将所述密封材的出光面作为上表面时设置在该密封材的侧面。
2.根据权利要求1所述的半导体发光装置,其特征在于:
所述密封材具有平坦的出光面。
3.根据权利要求2所述的半导体发光装置,其特征在于:
所述反射层具有与所述出光面齐平的面,而且与所述密封材和所述次载具都接触。
4.根据权利要求1所述的半导体发光装置,其特征在于:
所述密封材和所述反射层的界面与所述次载具的表面大致垂直。
5.根据权利要求1所述的半导体发光装置,其特征在于:
所述密封材和所述反射层的界面与所述次载具的表面成钝角。
6.根据权利要求2或3所述的半导体发光装置,其特征在于:
在所述出光面具有微小凹凸结构。
7.根据权利要求1至6中任一项所述的半导体发光装置,其特征在于:
在所述半导体发光元件的周围具有荧光体层。
8.一种半导体发光装置的制造方法,其特征在于:
包括:
在次载具用基板上固定多个半导体发光元件的工序,
用密封材密封所述半导体发光元件的工序,
向所述半导体发光元件之间填充反射材的工序,
研磨所述密封材的表面的工序,以及
在填充有所述反射材的部分,将反射材及次载具用基板切断的工序。
9.根据权利要求8所述的半导体发光装置的制造方法,其特征在于:
用所述密封材密封的工序是对设置在所述次载具用基板上的所述半导体发光元件一个个地进行密封的工序。
10.根据权利要求8所述的半导体发光装置的制造方法,其特征在于:
用所述密封材密封的工序是在所述次载具用基板上形成密封材的层的工序。
11.根据权利要求8至10中任一项所述的半导体发光装置的制造方法,其特征在于:
填充所述反射材的工序,包含:
在所述半导体发光元件之间形成到达所述次载具用基板的一部分的槽的工序,和
向所述槽填充反射材的工序。
12.根据权利要求11所述的半导体发光装置的制造方法,其特征在于:
所述槽是与所述次载具用基板的表面大致垂直地形成的。
13.根据权利要求11所述的半导体发光装置的制造方法,其特征在于:
所述槽是相对于所述次载具用基板的表面斜着形成的。
14.根据权利要求8至13中任一项所述的半导体发光装置的制造方法,其特征在于:
在研磨所述密封材表面的工序之后,具有形成微小凹凸结构的工序。
15.根据权利要求8至14中任一项所述的半导体发光装置的制造方法,其特征在于:
具有在所述半导体发光元件的周围形成荧光体层的工序。
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Also Published As
Publication number | Publication date |
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JPWO2009066430A1 (ja) | 2011-03-31 |
EP2221885A1 (en) | 2010-08-25 |
WO2009066430A1 (ja) | 2009-05-28 |
TW200937683A (en) | 2009-09-01 |
KR20100077213A (ko) | 2010-07-07 |
US8552444B2 (en) | 2013-10-08 |
US20100258830A1 (en) | 2010-10-14 |
EP2221885A4 (en) | 2013-09-25 |
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