JP2009272634A - 蛍光体により変換された白色発光ダイオード用の封止法 - Google Patents
蛍光体により変換された白色発光ダイオード用の封止法 Download PDFInfo
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- JP2009272634A JP2009272634A JP2009112468A JP2009112468A JP2009272634A JP 2009272634 A JP2009272634 A JP 2009272634A JP 2009112468 A JP2009112468 A JP 2009112468A JP 2009112468 A JP2009112468 A JP 2009112468A JP 2009272634 A JP2009272634 A JP 2009272634A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】光源の近傍にナノ粒子と光散乱粒子との両方を導入することによって光取り出し効率と色温度分布一様性が改良されたことを特徴とする、改良された発光デバイス、特に蛍光体により変換された白色光デバイスを提供する。高い屈折率を有するナノ粒子は、波長変換層中に分散していて、光取り出し効率を改善するために前記層の屈折率を調節する。光散乱粒子は、波長変換層および/または周りの媒質中に分散していて、空間的な相関色温度一様性を改善する。
【選択図】図2
Description
SrGa2S4:Eu、
Sr2-yBaySiO4:Eu,
SrSi2O2N2:Eu
黄色/緑色
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+、
Ba2(Mg,Zn)Si2O7:Eu2+、
Gd0.46Sr0.31Al1.23OxF1.36:Eu2+ 0.06、
(Ba1-x-ySrxCay)SiO4:Eu、
Ba2SiO4:Eu2+
赤色
Lu2O3:Eu3+、
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4、
Sr2-xEuxCeO4、
SrTiO3;Pr3+,Ga3+、
CaAlSiN3:Eu2+、
Sr2Si5N8:Eu2+。
変換層204内では、(不図示の)蛍光剤粒子は、シリコーンのようなバインダ材料206中に分散している。蛍光剤粒子の屈折率(RI)とバインダ206のRIは同じであることもあり、異なることもある。しかしながら、散乱を低減するために、通常は、差は最小化される。
シリカゲル、シリコン・ナノ粒子、酸化亜鉛(ZnO)、酸化イットリウム(Y2O3)、2酸化チタン(TiO2)、硫酸バリウム(BaSO4)、アルミナ(Al2O3)、溶融石英(SiO2)、いぶしシリカ(SiO2)、窒化アルミニウム、ガラス玉、ダイアモンド、2酸化ジルコニウム(ZrO2)、炭化珪素(SiC)、酸化タンタル(TaO5)、窒化珪素(Si3N4)、酸化ニオブ(Nb2O5)、窒化ホウ素(BN)、または蛍光剤粒子(たとえば、YAG:Ce BOSE)。
列挙しなかった他の材料を用いることも出来る。特定の散乱効果を実現するために、材料の色々な組み合わせ又は同じ材料の異なる形態の組み合わせを用いてもよい。
Claims (13)
- LEDチップと、
前記LEDチップ上に配置された変換層であって、前記変換層はバインダ材料と前記バインダ材料中に分散した複数の蛍光剤粒子とを有することを特徴とする変換層と、
前記LEDチップの近傍に配置された複数のナノ粒子と、
前記LEDチップの近傍に配置された複数の光散乱粒子と、
を備えた発光ダイオード(LED)デバイス。 - 前記ナノ粒子は、前記バインダ材料中に分散していることを特徴とする請求項1に記載のLEDデバイス。
- 前記変換層は、体積比で約15−25%のナノ粒子を含むことを特徴とする請求項2に記載のLEDデバイス。
- 前記光散乱粒子は、前記バインダ材料中に分散していることを特徴とする請求項1に記載のLEDデバイス。
- 前記変換層は、体積比で約0.01−5%の光散乱粒子を含むことを特徴とする請求項4に記載のLEDデバイス。
- 前記LEDチップと前記変換層とを実質的に包む封止体をさらに含むことを特徴とする請求項1に記載のLEDデバイス。
- 前記光散乱粒子は、前記封止体中に分散していることを特徴とする請求項6に記載のLEDデバイス。
- 前記光散乱粒子は、前記バインダ材料と前記封止体中に分散していることを特徴とする請求項6に記載のLEDデバイス。
- 前記ナノ粒子は、前記バインダ材料中に分散し、前記バインダ材料と前記ナノ粒子の組み合わせの実効屈折率が約1.7となることを特徴とする請求項1に記載のLEDデバイス。
- 前記LEDチップと前記変換層との間に挟まれたスペーサ層をさらに含むことを特徴とする請求項1に記載のLEDデバイス。
- 前記LEDチップの主放出面が繊維構造化されていることを特徴とする請求項1に記載のLEDデバイス。
- 前記LEDチップ上の、前記変換層とは反対側に配置された反射素子をさらに含むことを特徴とする請求項1に記載のLEDデバイス。
- 前記ナノ粒子は、前記バインダ材料よりも高い屈折率を有することを特徴とする請求項1に記載のLEDデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/151,089 US9287469B2 (en) | 2008-05-02 | 2008-05-02 | Encapsulation for phosphor-converted white light emitting diode |
US12/151,089 | 2008-05-02 |
Publications (2)
Publication Number | Publication Date |
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JP2009272634A true JP2009272634A (ja) | 2009-11-19 |
JP5227252B2 JP5227252B2 (ja) | 2013-07-03 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2009112468A Active JP5227252B2 (ja) | 2008-05-02 | 2009-05-07 | 蛍光体により変換された白色発光ダイオード用の封止法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9287469B2 (ja) |
EP (1) | EP2113949B1 (ja) |
JP (1) | JP5227252B2 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012001938A1 (ja) * | 2010-06-28 | 2012-01-05 | パナソニック株式会社 | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
JP2012138561A (ja) * | 2010-12-08 | 2012-07-19 | Sharp Corp | 発光装置及びその製造方法 |
WO2013105514A1 (ja) * | 2012-01-13 | 2013-07-18 | コニカミノルタアドバンストレイヤー株式会社 | Led装置 |
US8513872B2 (en) | 2010-08-05 | 2013-08-20 | Sharp Kabushiki Kaisha | Light emitting apparatus and method for manufacturing thereof |
JP2013539916A (ja) * | 2010-10-05 | 2013-10-28 | インテマティックス・コーポレーション | フォトルミネッセンス波長変換を備える固体発光装置及びサイネージ |
JP2014535167A (ja) * | 2011-10-13 | 2014-12-25 | インテマティックス・コーポレーションIntematix Corporation | 固体発光デバイス及びランプのためのフォトルミネセンス波長変換コンポーネント |
WO2015060289A1 (ja) * | 2013-10-24 | 2015-04-30 | 東レ株式会社 | 蛍光体組成物、蛍光体シート、蛍光体シート積層体ならびにそれらを用いたledチップ、ledパッケージおよびその製造方法 |
JP2015522668A (ja) * | 2012-05-22 | 2015-08-06 | ナノコ テクノロジーズ リミテッド | 高反射剤を用いた量子収量の向上 |
WO2016056316A1 (ja) * | 2014-10-09 | 2016-04-14 | シャープ株式会社 | 発光装置 |
JP2016162850A (ja) * | 2015-02-27 | 2016-09-05 | 豊田合成株式会社 | 発光装置 |
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JPWO2016056316A1 (ja) * | 2014-10-09 | 2017-07-13 | シャープ株式会社 | 発光装置 |
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JP2016162850A (ja) * | 2015-02-27 | 2016-09-05 | 豊田合成株式会社 | 発光装置 |
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US10174886B2 (en) | 2015-07-31 | 2019-01-08 | Sharp Kabushiki Kaisha | Wavelength conversion member and light emitting device |
Also Published As
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EP2113949A3 (en) | 2011-09-21 |
EP2113949A2 (en) | 2009-11-04 |
EP2113949B1 (en) | 2018-04-18 |
US9287469B2 (en) | 2016-03-15 |
JP5227252B2 (ja) | 2013-07-03 |
US20090272996A1 (en) | 2009-11-05 |
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