WO2007018039A1 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- WO2007018039A1 WO2007018039A1 PCT/JP2006/314844 JP2006314844W WO2007018039A1 WO 2007018039 A1 WO2007018039 A1 WO 2007018039A1 JP 2006314844 W JP2006314844 W JP 2006314844W WO 2007018039 A1 WO2007018039 A1 WO 2007018039A1
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- sealing portion
- emitting device
- light emitting
- semiconductor light
- sealing
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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Definitions
- the present invention relates to a semiconductor light emitting device in which a semiconductor chip such as an LED (Light Emitting Diode) chip is packaged.
- a semiconductor chip such as an LED (Light Emitting Diode) chip is packaged.
- the blue LED chip There are mainly two methods for obtaining white light using an LED chip that emits light from the blue region to the ultraviolet region (for example, see Non-Patent Document 1).
- the blue LED chip There is a method of obtaining white light by using blue light that also emits force and yellow light obtained by exciting a fluorescent material such as cerium-doped yttrium aluminum garnet (YAG: Ce) with blue light.
- a fluorescent material such as cerium-doped yttrium aluminum garnet (YAG: Ce) with blue light.
- YAG cerium-doped yttrium aluminum garnet
- Y O S: Eu abbreviation P22—RE3 force for red
- ZnS Cu, A1 (abbreviation P22—GN4) or (Ba, Mg) Al 2 O: Eu, Mn (abbreviation LP—G3)
- the white LED device is realized by packaging an LED chip that emits light from a blue region to an ultraviolet region and the above-described fluorescent material with a sealing resin material.
- a sealing resin material is formed into a bullet shape (see, for example, Non-Patent Document 2).
- the white LED device 100 includes a first lead frame 101.
- the LED chip 102 that emits light in the blue to ultraviolet region is fixed to the bottom surface of the die pad portion provided in a cup shape at one end of A by a chip fixing paste material 103 such as an Ag paste material or an insulating paste material. ! RU
- a first electrode 104A and a second electrode 104B are formed on the upper surface of the LED chip 102.
- the first electrode 104A is electrically connected to the first lead frame 101A via the first wire 105A
- the second electrode 104B is electrically connected to the first lead frame 101A via the second wire 105B. Electrically connected to the second lead frame 101B paired with
- the LED chip 102 is sealed with a resin material 105 molded in a cannonball shape.
- a resin material transparent to visible light such as epoxy resin or silicone resin is generally used.
- the fluorescent material 106 described above is kneaded in the resin material 105 (for example, see Patent Document 1).
- Non-Patent Document 1 Kazutomo Tomoe, et al., “Mitsubishi Cable Industrial Time Report” No. 99, July 2002, p. 35, 41
- Non-Patent Document 2 Masaru Sugimoto, et al., “Matsushita Electric Engineering Technical Report” No. 53, No. 1, pp. 4-9
- Patent Document 1 Japanese Unexamined Patent Publication No. 2004-71908
- Patent Document 2 JP-A-2005-93724
- the conventional white LED device 100 has the following problems when epoxy resin or silicone resin is used as the sealing resin material 105.
- the light emission brightness from 100 decreases or the color tone changes. For this reason, the resin material 105 for sealing is required to have light resistance and heat resistance.
- the chip fixing paste material 103 is made of resin
- the emitted light from the LED chip 102 changes the color of the chip fixing paste material 103 to reduce the light emission luminance or the strength.
- the paste fixing material 103 which is made of a resin consisting only of the resin material 105 and the fluorescent material 106 constituting the semiconductor light-emitting device, deteriorates due to the ultraviolet light incident from the outside. There is a problem.
- the silicone resin has a lower light refractive index than the epoxy resin, the emitted light from the LED chip 102 is easy to be totally reflected, and the light extraction efficiency from the LED chip 102 is improved. (For example, see Patent Document 2) 0
- the refractive index of epoxy resin is LED chip (especially
- the light extraction efficiency is not sufficient because it is very small compared to the refractive index of GaN-based semiconductors.
- the light emission wavelength is longer than blue, and even if the LED chip is long, the light extraction efficiency is sufficiently high. No.
- an object of the present invention is to improve the light resistance, heat resistance, and light extraction efficiency of a sealing material for sealing a semiconductor chip on which a light emitting element is formed.
- the present invention includes particles made of an inorganic material having an effective particle size of one quarter or less of the emission wavelength in a base material constituting a sealing portion of a semiconductor light emitting device.
- the configuration
- a first semiconductor light emitting device includes a semiconductor chip that emits light having a wavelength from a blue region to an ultraviolet region, and at least a partial region on a passage path through which the light passes.
- the sealing portion is formed of a base material and an inorganic material dispersed in the base material and having an effective particle diameter of one quarter or less of the wavelength of light inside the base material. It is characterized by containing a sealing material such as a composite material containing particles and a fluorescent material.
- the particles dispersed in the base material of the sealing portion are made of an inorganic material, the particles of the sealing portion are compared with the case where the particles made of the inorganic material are not included. Light resistance and heat resistance are improved.
- the effective particle size of the particles dispersed in the base material is less than a quarter of the wavelength of the light emitted by the semiconductor chip force, the transparency of the sealing portion is not impaired. That is, the light extraction efficiency is not impaired.
- the particle size is the wave of light.
- the composite material in which the inorganic particles are dispersed can be regarded as a uniform medium having no variation in refractive index. Further, if the particle size is 1/4 or less of the wavelength of light, the light scattering in the composite material is only Rayleigh scattering, so that the translucency is less likely to deteriorate.
- the sealing portion is preferably formed so as to cover the periphery of the semiconductor chip.
- the sealing portion is preferably formed in contact with the semiconductor chip.
- the particle size is not included in the base material of the sealing portion. Since the difference in thermal expansion coefficient is small, peeling and cracking of the sealing portion occur.
- the sealing portion includes a first sealing portion made of a sealing material, and a second sealing formed outside the first sealing portion and including a fluorescent material. It is preferable that it is comprised by the part.
- the semiconductor chip is arranged by disposing the first sealing portion made of the sealing material, which is a composite material, in a portion that is relatively close to the semiconductor chip and therefore has a relatively high light density. High and light extraction efficiency can be realized and high! ⁇ Light resistance and heat resistance can be obtained. Furthermore, the second sealing portion that is more transparent than the composite material and contains the fluorescent material is disposed in the portion where the semiconductor chip force is relatively far and thus the light density is relatively low, thereby providing the second sealing portion. It is possible to improve the light transmittance in the sealing portion. As a result, the light extraction efficiency from the semiconductor light emitting device can be improved.
- the first sealing portion may further include a reflecting member that is provided at least below and on the side of the semiconductor chip in the first sealing portion and reflects light. preferable.
- the spectrum contained in the composite material constituting the first sealing portion on the semiconductor chip side attenuates the spectrum in the blue region and the ultraviolet region, as will be described later.
- the spectrum on the short wavelength side such as the red region increases. This phenomenon is described in the present specification.
- the sealing material is preferably a base layer in which the semiconductor chip is fixed with a transparent paste material and is held by the reflecting member.
- the paste material for fixing the semiconductor chip is transparent. Therefore, the average color rendering index (Ra) is obtained due to the filter effect of the particles contained in the underlayer. And the color temperature can be lowered.
- the sealing portion is formed of a first sealing portion made of a sealing material, and outside the first sealing portion, and the second sealing portion
- the particles are preferably made of a material that absorbs ultraviolet light.
- the sealing portion includes a first sealing portion including a fluorescent material, and a second sealing member formed outside the first sealing portion and made of the sealing material. It is preferable that it is comprised by the sealing part.
- the spectrum in the blue region and the ultraviolet region is attenuated by the particles contained in the composite material constituting the second sealing part formed outside the first sealing part.
- the average color rendering index (Ra) can be improved and the color temperature can be lowered.
- a second semiconductor light emitting device includes a semiconductor chip that emits light, and a sealing portion that is formed in at least a partial region on a passage path through which the light passes. Includes a base material and a sealing material which also has a composite material force including particles made of an inorganic material having an effective particle diameter of one-fourth or less of the wavelength of light inside the base material dispersed in the base material, And a first sealing portion that covers the semiconductor chip and a second sealing portion formed outside the first sealing portion, with respect to the wavelength of light in the first sealing portion.
- the first refractive index is larger than the second refractive index with respect to the wavelength of light in the second sealing portion.
- the sealing portion is dispersed in the base material and has an effective wavelength of one quarter or less of the wavelength of light inside the base material. Since it contains particles made of an inorganic material having a particle size, the light resistance and heat resistance of the sealing portion are improved, and the transparency of the sealing portion is not impaired.
- the first refractive index with respect to the wavelength of light in the first sealing portion is larger than the second refractive index with respect to the wavelength of light in the second sealing portion, the refractive index of the entire sealing portion is High in the inner area on the semiconductor chip side and lower in the outer area. Therefore, since the total reflection of the emitted light from the semiconductor chip is reduced due to the low refractive index in the outer region, the light extraction efficiency is improved.
- the particles contained in the first sealing portion and the particles contained in the second sealing portion have different compositions.
- the first sealing portion is more than the second sealing portion. It is possible to reliably increase the refractive index of the stopper.
- the ratio of the particles in the first sealing portion to the composite material is preferably higher than the ratio of the particles in the second sealing portion to the composite material.
- the refractive index of the first sealing portion can be surely made larger than that of the second sealing portion.
- a third semiconductor light emitting device includes a semiconductor chip that emits light and a sealing portion that is formed in at least a partial region on a passage path through which the light passes. Includes a base material and a sealing material that also has a composite material force including particles made of an inorganic material that is dispersed in the base material and has an effective particle size of 1 ⁇ 4 or less of the wavelength of light inside the base material,
- the refractive index with respect to the wavelength of light is set so that the inner region force near the semiconductor chip decreases toward the outer region.
- the sealing portion is dispersed in the base material and has an effective wavelength of one quarter or less of the wavelength of light inside the base material. Since it contains particles made of an inorganic material having a particle size, the light resistance and heat resistance of the sealing portion are improved, and the sealing portion The transparency of is not impaired.
- the refractive index with respect to the wavelength of light is set so that the inner region force close to the semiconductor chip also decreases toward the outer region, the refractive index of the entire sealing portion is high in the inner region on the semiconductor chip side and Lower in the outer area. Therefore, since the total reflection of the emitted light of the semiconductor chip force is reduced by the low refractive index in the outer region, the light extraction efficiency is improved.
- the proportion of the particles in the composite material in the sealing portion is preferably higher in the inner region near the semiconductor chip than in the outer region.
- the particles contained in the sealing portion may have different compositions of particles contained inside the sealing portion and particles contained outside the sealing portion. I like it.
- the refraction of the inner region is larger than the outer region in the sealing part. The rate can be reliably increased.
- a fourth semiconductor light emitting device includes a semiconductor chip that emits light and a sealing portion that is formed in at least a partial region on a passage path through which the light passes. And a sealing material having a composite material force including particles made of an inorganic material dispersed in the base material and having an effective particle size equal to or less than a quarter of the wavelength of light inside the base material, and a semiconductor chip And a second sealing portion formed outside the first sealing portion, and the second sealing portion is in the ultraviolet region as particles. It is characterized by containing particles made of a material that absorbs light.
- the second sealing portion includes particles made of a material that absorbs ultraviolet light as particles, the semiconductor chip force emits light in the ultraviolet wavelength. When components are contained, unnecessary ultraviolet light emission can be suppressed. Further, ultraviolet light incident from the outside is also absorbed by the particles added to the second sealing portion, so that deterioration of the sealing material and the like can be prevented. [0049] In the fourth semiconductor light emitting device, it is preferable that the second sealing portion is formed so as to cover the upper side, the lower side and the side of the semiconductor chip.
- a fifth semiconductor light emitting device includes a semiconductor chip that emits light having a wavelength from a blue region to an ultraviolet region, and a sealing portion that is formed in at least a partial region on a passage path through which the light passes. And a holding material for holding the semiconductor chip and a transparent paste material for fixing the semiconductor chip and the holding material.
- the paste material is dispersed in the base material and the base material, and is formed inside the base material. This is a composite material force including particles made of an inorganic material having an effective particle size of one-fourth or less of the wavelength of light of the light, and the particles are made of a material that absorbs light in the ultraviolet region.
- the transparent paste material that fixes the semiconductor chip and the holding material also has a composite material force including particles made of an inorganic material, and the particles are light in the ultraviolet region. Therefore, it is possible to suppress deterioration of the paste material due to ultraviolet light and decrease in light emission luminance due to discoloration.
- the paste material since the paste material is transparent, light emitted from the semiconductor chip force can be output to the outside through the paste material, so that the light extraction efficiency is improved.
- the paste material which also has a composite material strength, improves the heat dissipation to the heat holding material that also generates the semiconductor chip force.
- the sealing portion preferably includes a fluorescent material.
- the fluorescent material when the emitted light from the semiconductor chip is blue or ultraviolet light, the fluorescent material can be excited to obtain white light.
- the particles are preferably made of an inorganic compound.
- the base material is preferably made of a resin material.
- the resin material is preferably an inorganic polymer material. If it does in this way, it will become easy to improve light resistance and heat resistance.
- the resin material is preferably an organic polymer material. Like this Then, it becomes easy to improve moldability.
- the base material is preferably made of a material that is transparent to visible light.
- the composite material is preferably transparent to visible light.
- the refractive index of the particles with respect to the wavelength of light is larger than the refractive index of the base material with respect to the wavelength of light and is equal to or less than the refractive index of the semiconductor chip. Preferably there is.
- the refractive index of the sealing portion is higher than that in the case where particles are not added, so that the light extraction efficiency is further improved.
- the proportion of the particles in the composite material is preferably 5% by volume or more and 60% by volume or less.
- the proportion of the particles in the composite material is more preferably 10 volume% or more and 50 volume% or less, more preferably 20 volume% or less and 40 volume% or less.
- the sealing section preferably has a hemispherical outer shape.
- the sealing section has a quadrangular outer shape in cross section.
- a sealing material having a composite material strength can be applied by a printing method or the like, and the formation becomes easy.
- the top surface is a flat surface, I'm going to be.
- the first sealing portion and the second sealing portion are:
- the outer shape is preferably hemispherical.
- the first sealing portion has a quadrangular outer shape in cross section.
- the second sealing part preferably has a hemispherical outer shape.
- the first sealing portion and the second sealing portion are:
- the outer shape of the cross section is preferably a square shape.
- the first sealing portion has a hemispherical outer shape
- the outer shape of the cross section of the sealing part 2 is a square shape.
- the first to third semiconductor light emitting devices further include a reflecting member that is provided in a region of the sealing portion on the side of the semiconductor chip and reflects light.
- the sealing portion has a reverse taper shape whose cross-sectional shape is narrow downward and wide upward!
- a semiconductor light emitting device such as a white LED having a long lifetime and high brightness can be realized.
- FIG. 1 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.
- FIG. 2 is an enlarged sectional view of a sealing portion in the semiconductor light emitting device according to the first embodiment of the present invention.
- FIG. 3 is a graph illustrating the effective particle diameter of fine particles added to the sealing portion in the semiconductor light emitting device according to the first embodiment of the present invention.
- ⁇ 4] A graph showing the relationship between the refractive index of the sealing portion (composite material) and the addition amount (volume ratio) of fine particles in the semiconductor light emitting device according to the first embodiment of the present invention.
- FIG. 5 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention.
- FIG. 6 is a schematic cross-sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.
- FIG. 7 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.
- FIG. 8 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth embodiment of the present invention.
- (a) shows an LED chip in the semiconductor light emitting device according to the fifth embodiment of the present invention.
- 6 is a graph showing the relationship between the refractive index of the sealing portion and the rate of change of the total luminous flux of emitted light for each of the constituent substrate materials by simulation.
- (b) is a graph obtained by simulating the relationship between the refractive index of the sealing portion and the total luminous flux for each material of the substrate constituting the LED chip in the semiconductor light emitting device according to the fifth embodiment of the present invention.
- FIG. 10 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth embodiment of the present invention.
- FIG. 11 A schematic cross-sectional view showing a semiconductor light-emitting device according to a first modification of the sixth embodiment of the present invention.
- FIG. 12 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modification of the sixth embodiment of the present invention.
- FIG. 13 A schematic cross-sectional view showing a semiconductor light emitting device according to a third modification of the sixth embodiment of the present invention.
- FIG. 14 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modification of the sixth embodiment of the present invention.
- FIG. 15 (a) and (b) show the refractive indices of the first sealing portion and the second sealing portion in the semiconductor light emitting device according to the fourth modification of the sixth embodiment of the present invention. It is the graph which calculated
- FIG. 16 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modification of the sixth embodiment of the present invention.
- FIG. 17 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth modification of the sixth embodiment of the present invention.
- FIG. 19 is a schematic cross-sectional view showing a semiconductor light emitting device according to a seventh embodiment of the present invention.
- FIG. 20 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modification of the seventh embodiment of the present invention.
- FIG. 21 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modification of the seventh embodiment of the present invention.
- FIG. 22 is a schematic cross-sectional view showing a semiconductor light emitting device according to a third modification of the seventh embodiment of the present invention.
- FIG. 23 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modification of the seventh embodiment of the present invention.
- FIG. 24 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modification of the seventh embodiment of the present invention.
- FIG. 25 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth modification of the seventh embodiment of the present invention.
- FIG. 26 is a schematic cross-sectional view showing a semiconductor light emitting device according to a seventh modification of the seventh embodiment of the present invention.
- FIG. 27 is a schematic cross-sectional view showing a semiconductor light emitting device according to an eighth embodiment of the present invention.
- FIG. 29 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modification of the eighth embodiment of the present invention.
- FIG. 30 is a schematic cross-sectional view showing a semiconductor light emitting device according to a ninth embodiment of the present invention.
- FIG. 31 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modification of the ninth embodiment of the present invention.
- FIG. 32 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modification of the ninth embodiment of the present invention.
- FIG. 33 is a schematic cross-sectional view showing a semiconductor light emitting device according to a tenth embodiment of the present invention.
- FIG. 35 is a graph showing an emission spectrum in the semiconductor light emitting device according to the tenth embodiment of the present invention.
- FIG. 36 A schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modification of the tenth embodiment of the present invention.
- FIG. 37 A schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modification of the tenth embodiment of the present invention.
- FIG. 42 is a graph showing an emission spectrum in the semiconductor light emitting device according to the twelfth embodiment of the present invention.
- the emission spectrum of the semiconductor light emitting device according to the thirteenth embodiment of the present invention is It is a graph to show.
- FIG. 44 is a graph showing an emission spectrum of a semiconductor light emitting device according to a modification of the thirteenth embodiment of the present invention.
- FIG. 45 is a schematic cross-sectional view showing a conventional semiconductor light emitting device.
- Semiconductor light emitting device A Semiconductor light emitting device B Semiconductor light emitting device C Semiconductor light emitting device D Semiconductor light emitting device E Semiconductor light emitting device F Semiconductor light emitting device A First bump B Second bump Semiconductor light emitting device A Semiconductor light emitting device B Semiconductor light emitting device C Semiconductor Light emitting device D Semiconductor light emitting device E Semiconductor light emitting device F Semiconductor light emitting device G Semiconductor light emitting device 50H Semiconductor light emitting device
- FIG. 1 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the first embodiment of the present invention.
- the LED chip 12 is made of an Ag paste material on the bottom surface of the die pad portion provided in a cup shape at the upper end portion of the first lead frame 11A. Alternatively, it is fixed and held by a chip fixing paste material 13 such as an insulating paste material.
- an LED chip made of, for example, a GaN-based compound semiconductor and emitting light having a wavelength from a blue region to an ultraviolet region is used.
- a first electrode 14A and a second electrode 14B are formed on the upper surface of the LED chip 12.
- the first electrode 14A is electrically connected to the first lead frame 11A via the first wire 15A
- the second electrode 14B is connected to the first lead 15A via the second wire 15B. It is electrically connected to the second lead frame 11B paired with the frame 11A.
- the LED chip 12 is sealed with a sealing portion 16 molded into a bullet shape so as to include the die pad portion of the first lead frame 11A and the upper end portion of the second lead frame 11B.
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a, and a fluorescent material 16c. Has been.
- the light having a wavelength from the blue region to the ultraviolet region radiated from the LED chip 12 (hereinafter referred to as radiated light) excites the fluorescent material 16 c located on the radiation path of the sealing portion 16.
- White light can be obtained from the white LED device 10 by mixing the excitation light and the emitted light or by mixing the excitation lights of a plurality of colors.
- FIG. 2 shows an enlarged part of the sealing portion 16.
- the fine particles 16b made of an inorganic material include primary fine particles 16bl and composite fine particles 16b2 formed by condensing the primary fine particles 16bl. Accordingly, the fine particles 16b being uniformly dispersed in the base material 16a means that the primary fine particles 16bl and the composite fine particles 16b2 are substantially uniformly dispersed regardless of the position.
- the base material 16a for example, epoxy resin or acrylic that is transparent to visible light is used.
- a resin material made of an organic polymer material such as a resin or a cycloolefin resin, or a resin material made of an inorganic polymer material such as a silicone resin can be used.
- the effective particle diameter of the fine particles 16b is set to be equal to or less than a quarter of the wavelength of the emitted light from the LED chip 12, that is, the wavelength in the base material 16a.
- the refractive index of the epoxy resin is about 1.5.
- the wavelength of the emitted light in the base material 16a is 267 nm. Therefore, if the effective particle diameter of the fine particles 16b is set to 67 nm or less, it can be set to a quarter or less of the wavelength in the base material 16a.
- the effective particle size of the fine particles 16b is not limited to one quarter or less of the wavelength in the base material 16a, and the effect of the present invention can be obtained if it is set to 1 nm or more and lOOnm or less.
- the effective particle diameter of the fine particles 16b may be set to 1 nm or more and 50 nm or less in order to have more sufficient transparency in the emitted light having a wavelength from the blue region to the ultraviolet region.
- the particle size of the fine particles is less than 1 nm, a material that exhibits a quantum effect may cause fluorescence, which may affect the characteristics.
- the particle diameter and effective particle diameter of the fine particles 16b added to the base material 16a can be confirmed with an electron microscope or the like.
- the particle diameter of the primary fine particles 16bl is more preferably 1 nm or more and lOOnm or less, and the substantial effective particle diameter is preferably 1 nm or more and 50 nm or less.
- the value of the effective particle size of the primary fine particle 16bl is determined by the particle size measurement by the gas adsorption method in the powder, or the particle size measurement observed by an electron microscope in addition to the particle size distribution measurement in the solution. Can be obtained.
- the average particle diameter of the primary fine particles of 16bl is 1 nm or more and 1Onm or less and most of them are uniformly dispersed without agglomeration, Rayleigh scattering is further reduced. It is preferable because it has sufficient transparency. This state can be confirmed by observing the composite material with a transmission electron microscope.
- the effective particle diameter will be described with reference to FIG.
- the horizontal axis represents the particle size of the fine particle 16b
- the left vertical axis represents the frequency of the fine particle 16b with respect to the vertical particle size
- the right vertical axis represents the cumulative frequency of the particle size.
- the effective particle size is the total particle 16b Of these, in the particle size frequency distribution, the particle size at which the cumulative frequency is 50% is the central particle size (median diameter: d50), and the particle size in the range A where the cumulative frequency is 50% around the central particle size. Point to range B.
- At least one inorganic material selected from the group consisting of inorganic oxides, metal nitrides, metal carbides, carbon compounds and sulfates may be used.
- Inorganic oxides include titanium oxide (refractive index: 2.2 to 2.5), tantalum oxide (refractive index 2.0 to 2.3), and niobium oxide (refractive index 2.1 to 2.3). ), Acid tungsten (refractive index 2.2), zirconium oxide (refractive index 2.1), acid zinc (refractive index 1. 9 to 2.0), indium oxide (refractive index 2.0) , Tin oxide (refractive index 2.0), acid hafnium (refractive index 2.0), yttrium oxide (refractive index 1.9), acid silicon (refractive index 1.4 to 1.5) or acid ⁇ Aluminum (refractive index 1. 7 to 1.8) can be used. These composite inorganic oxides can also be used.
- Examples of the metal nitride include silicon nitride (refractive index: 1.9 to 2.0).
- metal carbides include silicon carbide (refractive index 2.6).
- Examples of the carbon compound include inorganic materials having translucency such as diamond (refractive index 3.0) or diamond 'like' carbon (refractive index 3.0) although it is a simple substance of carbon.
- examples of the sulfide include copper sulfide and tin sulfide.
- the refractive index given to each inorganic material name indicates the refractive index of the emitted light from the LED chip 12, that is, the emitted light having a wavelength from the blue light source to the ultraviolet region.
- the fine particles 16b include at least one acid selected from the group consisting of titanium oxide, tantalum oxide, zirconium oxide and zinc oxide as an inorganic compound for increasing the refractive index of the sealing material 16d.
- Inorganic particles containing as a main component can be used. These inorganic particles have the advantage of being readily available due to the large number of commercially available products.
- Photocatalytic action such as silicon oxide (SiO 2) or aluminum oxide (alumina: AI 2 O 3) is inactive on the amorphous or fine particle surface
- the proportion of the fine particles 16b in the sealing material 16d made of the composite material is preferably 5% by volume or more and 60% by volume or less. If the proportion of the fine particles 16b is too high, the transparency of the sealing material 16d is lowered. Conversely, if the proportion of the fine particles 16b is too low, the effect of adding calories to the fine particles 16b is reduced.
- FIG. 6 shows the result of calculating the change in the refractive index n of the composite material with respect to the proportion of the fine particles 16b in the sealing material 16d made of the composite material.
- the calculation was performed using the following formula (1) (Maxwell-Garnett theory).
- the refractive index of a composite material means an effective refractive index when the composite material is regarded as a medium having one refractive index.
- n 2 n 2 X ⁇ n 2 + 2n 2 + 2P (n 2 — n 2 ) ⁇
- n is the refractive index of the composite material
- n is the refractive index of the fine particles 16b
- nc 1 2 is the refractive index of the base material 16a
- P is the proportion (volume ratio) of the fine particles 16b in the composite material It is.
- Figure 4 shows that to make the composite material have a refractive index of 1.8 or more, the base material 16a has a refractive index of 1.4, 1.5, and 1.6, and occupies the composite material. It can be seen that the proportion of the fine particles 16b may be 46%, 37% and 28% by volume, respectively.
- the refractive index value of a general optical resin is in the range of 1.4 to 1.7, setting the refractive index value to be more than 1.8 but not less than 1.8 is an optical resin. It is extremely difficult to realize by itself.
- the proportion of the fine particles 16b in the composite material is preferably 5% by volume or more and 60% by volume or less. Moreover, 10 volume% or more and 50 volume% or less are more preferable. Further, when a general-purpose optical resin having a refractive index in the range of 1.4 to 1.55 is used as the base material 16a, it is more preferably about 20% by volume or less and 40% by volume or less.
- the material of the fluorescent material 16c when the LED chip 12 outputs blue radiated light, a fluorescent material such as YAG: Ce that can obtain yellow light may be used. In addition, release from the purple region to the ultraviolet region. When outputting incident light, a plurality of types of fluorescent materials are used as the fluorescent material 16c. Specifically, YOS: Eu for red and ZnS: Cu, A1 or (Ba, Mg) Al 2 O for green:
- the fine particles 16b made of an inorganic material are added so as to be uniformly dispersed in the sealing material 16d constituting the sealing portion 16. Compared to the case where 16b is not added, the light resistance and heat resistance of the sealing portion 16 are improved. In addition, since the effective particle size of the dispersed fine particles 16b is set to be equal to or less than a quarter of the wavelength of the radiated light emitted from the LED chip 12 (semiconductor chip), the transparency of the sealing portion 16 is impaired. Therefore, the light extraction efficiency is not impaired.
- the refractive index with respect to the emitted light in the sealing portion 16 is higher than that in the case where the fine particles 16b are not added, the light extraction efficiency is further improved.
- the chip fixing paste material 13 is made transparent, the chip fixing paste material 13 does not absorb the emitted light from the LED chip 12, so that the light extraction efficiency is improved.
- the chip fixing paste material 13 having transparency is, for example, a transparent paste material mainly composed of epoxy resin or silicone resin, a low melting point glass material, or a compound having a siloxane bond, which is reacted with a catalyst. Fine particles that absorb ultraviolet light in a low-temperature-cured glass material obtained by drying a product obtained by drying the product of the second step, the step of hydrolyzing and dehydrating and condensing the reactant in the first step It can be obtained by adding to a composite material.
- the chip fixing by adding the fine particles 16b to the chip fixing paste material 13, the chip fixing The heat dissipation property of the paste material 13 is improved, and since the fine particles 16b absorb ultraviolet light, the light resistance (UV resistance) of the chip fixing paste material 13 is also improved.
- FIG. 5 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the second embodiment of the present invention. Note that the same components as those shown in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.
- the sealing portion 26 directly covers the LED chip 12 held on the die pad portion of the first lead frame 11A. From the first sealing portion 26A, and the second sealing portion 26B that covers each upper end of the first lead frame 11A and the second lead frame 11B including the first sealing portion 26A in a bullet shape. Composed
- the first sealing portion 26A is configured by a sealing material 16d made of a composite material including the fine particles 16b according to the first embodiment, and the second sealing portion 26B is mixed with the fluorescent material 16c. It is composed of a rubbed resin material 25. As the material of the resin material 25, the same material as that of the base material 16a according to the first embodiment may be used.
- the first sealing portion 2 made of the sealing material 16d having a composite material strength is provided in a portion where the light density is relatively high near the LED chip 12.
- a second sealing portion 26B made of a resin material 25 having a higher transparency than the sealing material 16d is provided in a portion where the light density is relatively low at a position away from the LED chip 12.
- the fine particles 16b added to the first sealing portion 26A can absorb zinc light, zinc oxide, or acid.
- cerium is used, deterioration of the base material 16a constituting the first sealing portion 26A due to ultraviolet light is suppressed. Can be controlled.
- epoxy resin that is excellent in transparency but easily yellowed by ultraviolet light can be used as the base material 16a.
- FIG. 6 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the third embodiment of the present invention.
- the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 has at least a first wiring formed selectively on the substrate 31 and on the front surface and the back surface of the substrate 31. 3 Mounted on a printed wiring board having 2A and second wiring 32B.
- the LED chip 12 is fixed on the first wiring 32A by a chip fixing paste material 13, and the first electrode 14A and the second electrode formed on the upper surface of the LED chip 12 are fixed.
- the first electrode 14A is electrically connected to the first wiring 32A via the first wire 15A
- the second electrode 14B is electrically connected to the second wire 15B via the second wire 15B. It is electrically connected to wiring 32B.
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a, and a fluorescent material 16c.
- a base material 16a a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a
- a fluorescent material 16c has been.
- the same material as that constituting the sealing part 16 of the first embodiment may be used.
- the LED chip 12 electrically connected to the first wiring 32A and the second wiring 32B, respectively, is sealed around the printed wiring board by a sealing portion 16.
- the first wiring 32A and the second wiring 32B are formed by forming a wiring having a copper (Cu) thin film force on the substrate 31 by, for example, a plating method, and nickel ( Ni) and gold (Au) can be formed sequentially.
- Cu copper
- Au gold
- the semiconductor light emitting device 30 according to the third embodiment includes the composite material including the base material 16a and the fine particles 16b and the fluorescent material 16c after the LED chip 12 is mounted on the printed wiring board. This is realized by transfer molding a material obtained by mixing the above. Thereby, in the semiconductor light emitting device 30 according to the third embodiment, as in the semiconductor light emitting device 10 according to the first embodiment, the light resistance and heat resistance in the sealing portion 16 are improved, and When the light extraction efficiency is improved, the effect can be obtained.
- a semiconductor light emitting device according to the fourth embodiment of the present invention will be described below with reference to the drawings.
- FIG. 7 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the fourth embodiment of the present invention.
- the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 has at least a first wiring formed selectively on the substrate 31 and on the front surface and the back surface of the substrate 31. 32. Mounted on a printed wiring board having 2A and second wiring 32B by a so-called flip-chip mounting (face-down) method in which the upper surface of LED chip 12 is opposed to the main surface of substrate 31.
- the first electrode 14A and the second electrode 14B formed on the LED chip 12 and facing the substrate 31 the first electrode 14A intervenes with the first bump 41A.
- the second wiring 14A is electrically connected to the first wiring 32A
- the second electrode 14B is electrically connected to the second wiring 32B via the second bump 41B.
- the LED chip 12 electrically connected to the first wiring 32A and the second wiring 32B, respectively, is sealed around the printed wiring board by a sealing portion 16.
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed in the base material 16a, and a fluorescent material 16c.
- a base material 16a a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed in the base material 16a
- a fluorescent material 16c has been.
- the same material as that constituting the sealing part 16 of the first embodiment may be used.
- the constituent material of the first bump 41A and the second bump 41B for example, gold (Au) can be used!
- the composite including the base material 16a and the fine particles 16b is formed. This is realized by transfer molding a material obtained by mixing the fluorescent material and the fluorescent material 16c.
- the light resistance in the sealing portion 16 is the same as in the semiconductor light emitting devices 10 and 30 according to the first embodiment and the third embodiment.
- the heat resistance can be improved and the light extraction efficiency can be improved.
- the semiconductor light emitting device 40 according to the fourth embodiment uses bumps instead of wires for electrical connection between the LED chip 12 and the printed wiring board, the semiconductor according to the third embodiment Compared with the light emitting device 30, it can be made thinner.
- FIG. 8 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the fifth embodiment of the present invention.
- the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is fixed on the bottom surface of the recess 51a in the case material 51 having the recess 51a.
- the case material 51 is made of, for example, a heat-resistant resin material such as a liquid crystal polymer, and at least a first lead 52A and a second lead 52B are inserted. In view of reflection with respect to visible light, it is preferable to use a white heat-resistant grease material.
- the first lead 52A and the second lead 52B are exposed from the bottom surface of the recess 51a of the case material 51, and the LED chip 12 is used for fixing the chip on the exposed region of the first lead 52A. It is fixed by a paste material 13.
- the first electrode 14A is electrically connected to the first lead 52A through the first wire 15A.
- the second electrode 14B is electrically connected to the second lead 52B with the second wire 15B interposed therebetween.
- the LED fixed on the bottom surface of the recess 51a of the case material 51 The chip 12 is sealed by filling the recess 51 a of the case material 51 with the sealing portion 16.
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a, and a fluorescent material 16c.
- a base material 16a a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a
- a fluorescent material 16c has been.
- the same material as that constituting the sealing part 16 of the first embodiment may be used.
- the outer portion of the case material 51 has a so-called gull wing (GW) type terminal shape).
- GW gull wing
- the outer shape of each of the leads 52A and 52B is not limited to the GW type, and may be molded into a J shape.
- the semiconductor light emitting device 50 according to the fifth embodiment is the same as the semiconductor light emitting devices 10, 30, and 40 according to the first embodiment, the third embodiment, and the fourth embodiment.
- the light resistance and heat resistance of the sealing portion 16 can be improved, and the light extraction efficiency can be improved.
- the LED chip 12 may be directly covered with the sealing material 16d including the fine particles 16b made of an inorganic material, and the sealing material 16d may be covered with the base material 16a including the fluorescent material 16c.
- a predetermined space may be provided in at least a part between the composite material and the semiconductor chip.
- FIG. 9 (a) shows the refractive index of the sealing portion 16 and the total luminous flux of the emitted light obtained by simulation for each material of the substrate constituting the LED chip 12 in the semiconductor light emitting device 50 according to the fifth embodiment.
- FIG. 9 (b) shows the relationship between the refractive index of the sealing portion 16 and the total luminous flux obtained by the same simulation.
- the substrate materials used in the simulation are as shown in [Table 1].
- the refractive index for each substrate material shown in [Table 1] is a typical value for each substrate in the visible light region.
- the refractive index of the sealing portion 16 is preferably 1.2 or more and 2.5 or less.
- the substrate material is made of zinc oxide (ZnO), gallium nitride (GaN), or silicon carbide (SiC) having a refractive index greater than 2.0
- the refractive index of the sealing portion 16 is 1 It is preferably 4 or more and 2.2 or less, more preferably 1. 6 or more and 2.0 or less.
- FIG. 10 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a sixth embodiment of the present invention.
- the same components as those shown in FIGS. 1 and 6 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is selected as the substrate 31 and the front and back surfaces of the substrate 31, as in the third embodiment.
- a so-called junction up (face-up) in which the back surface of the LED chip 12 is opposed to the main surface of the substrate 31 on a printed wiring board having at least a first wiring 32A and a second wiring 32B that are formed ) Implemented 1.
- the sealing portion 26 includes a first sealing portion 26A that directly and semispherically covers the semiconductor light emitting device chip 12, and a second sealing portion 26A that directly and semispherically covers the first sealing portion 26A. Consists of sealing part 26B It is made.
- the first sealing portion 26A includes a base material 16a and a sealing material 16d made of a composite material including the first fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a. And fluorescent material 16c.
- the second sealing portion 26B includes a base material 16a and a sealing material 16d that also has a composite material force including the second fine particles 17b made of an inorganic material uniformly dispersed inside the base material 16a. And fluorescent material 16c.
- the material constituting the first sealing portion 26A and the second sealing portion 26B may be the same material as the material constituting the sealing portion 16 of the first embodiment.
- a material in which the refractive index of the first fine particles 16b is larger than the refractive index of the second fine particles 17b is selected.
- the LED chip 12 also has a gallium nitride (GaN) semiconductor power, including a crystal growth substrate (epitaxial substrate), as shown in [Table 1], the refractive index of GaN is Even if the refractive index of the sealing portion is set to about 1.8, which is the highest extraction efficiency by adding fine particles, the refractive index of the sealing portion and the refractive index of air The difference is large.
- GaN gallium nitride
- the refractive index value of the first sealing portion 26A close to the LED chip 12 is set to be larger than the refractive index value of the second sealing portion 26B far from the LED chip 12. It is getting bigger.
- an inorganic material having a refractive index smaller than the refractive index of the first fine particles 16b added to the first sealing portion 26A is used as the second fine particles 17b added to the second sealing portion 26B. Used.
- the outer shapes of the first sealing portion 26A and the second sealing portion 26B are both hemispherical by, for example, a potting method, total reflection of emitted light is prevented. Further reduced.
- the fluorescent material 16 is included in both the first sealing portion 26A and the second sealing portion 26B. Add the c! /, but the fluorescent material 16c !! You can add only one of them! ,.
- FIG. 11 shows a white semiconductor light emitting device according to the first modification of the sixth embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the outer shape of the cross section of the first sealing portion 26A that directly covers the LED chip 12 is a quadrangular shape.
- the first sealing portion 26A can use a printing method as a method of forming the sealing material 16d, so that productivity is improved.
- FIG. 12 is a white view showing a semiconductor light emitting device according to a second modification of the sixth embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the semiconductor light emitting device 30C includes a first sealing portion 26A that directly covers the LED chip 12 and a second sealing portion that covers the first sealing portion. Both of the outer shapes of the cross-sections of the sealing portion 26B are rectangular.
- the first sealing portion 26A can use a printing method as a method of forming the sealing material 16d, and the second sealing portion 26B can be formed by a transfer molding method. Productivity is improved. In addition, since the upper surface of the sealing portion 26 is flat, it can be easily handled as a device.
- FIG. 13 shows a white semiconductor light-emitting device according to a third modification of the sixth embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is hemispherical, and the first sealing portion
- the outer shape of the cross section of the second sealing portion 26B covering the stopper portion 26A is a quadrangular shape.
- FIG. 14 is a white view showing a semiconductor light emitting device according to a fourth modification of the sixth embodiment of the present invention. A schematic cross-sectional configuration of an LED device is shown.
- the LED chip 12 is placed on the bottom surface of the recess 51a in the case material 51 having the recess 51a, as in the fifth embodiment. It is fixed by the face-up method.
- the cross-sectional shapes of the first sealing portion 26A that directly covers the LED chip 12 and the second sealing portion 26B that covers the first sealing portion 26A are both quadrangular.
- the printing method is used for forming the first sealing portion 26A and printing cannot be performed directly on the bottom surface of the recess 51a of the case material 51, for example, a force is exerted on the submount material.
- the submount material may be mounted on the bottom surface of the case material 51.
- FIGS. 15 (a) and 15 (b) show the first sealing part 26A and the second sealing part 26B in the semiconductor light emitting device 50A according to the fourth modification of the sixth embodiment.
- the relationship between each refractive index and light extraction efficiency is shown by simulation.
- FIG. 15A shows the case where GaN is used as the substrate material constituting the LED chip 12
- FIG. 15B shows the case where sapphire is used as the substrate material.
- the thickness of the first sealing portion 26A is 500 m
- the thickness of the second sealing portion 26B is 200 ⁇ m!
- FIG. 16 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth modification of the sixth embodiment of the present invention.
- the LED chip 12 is fixed on the bottom surface of the recess 51a in the case material 51 having the recess 51a.
- the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is hemispherical, and the outer shape of the cross section of the second sealing portion 26B that covers the first sealing portion 26A Is a square shape.
- FIG. 17 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth modification of the sixth embodiment of the present invention.
- the fine particles 16d attached to the sealing material 16d of the second sealing portion 26B are transferred to the first sealing portion.
- the composition is the same as that of the fine particles 16d added to the sealing material 16d of 26A, and the ratio of the fine particles 16b in the first sealing portion 26A to the sealing material 16d is determined as the fine particles in the second sealing portion 26B. It is higher than the ratio of 16b to the sealing material 16d. That is, the additive concentration of the fine particles 16b in the second sealing portion 26B is made smaller than the additive concentration of the fine particles 16b in the first sealing portion 26A.
- a concentration gradient may be provided, or the concentration may be changed stepwise.
- the refractive index power of the second sealing portion 26B is smaller than the refractive index of the first sealing portion 26A.
- the inorganic particles having the same composition are used for the fine particles 16b to be added to the first sealing portion 26A and the fine particles 16b to be added to the second sealing portion 26B, and only the addition concentration is used.
- the refractive index of the second sealing portion 26B is smaller than the refractive index of the first sealing portion 26A, it is added to the first sealing portion 26A.
- the composition and concentration of the fine particles 16b and the fine particles 16b added to the second sealing portion 26B may be changed.
- FIG. 17 shows the case where the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is a hemispherical shape, but it has been described in the fourth modification of the sixth embodiment.
- the outer shape of the cross section of the first sealing portion 26A may be a square shape.
- the sealing material 16d of the second sealing portion 26B similarly to the present modification, it is added to the sealing material 16d of the second sealing portion 26B.
- the fine particles 17d are replaced with the fine particles 16d to have the same composition as the fine particles 16d added to the sealing material 16d of the first sealing portion 26A, and to the sealing material 16d of the fine particles 16b in the first sealing portion 26A.
- the proportion of the fine particles 16b in the second sealing portion 26B may be higher than the proportion of the sealing material 16d.
- the semiconductor light emitting device 50D according to the seventh modification shown in FIG. 18 uses, for example, a phosphorous gallium (GaP) based semiconductor capable of emitting green light as the LED chip 12, and in this case, It is not necessary to add the fluorescent material 16c to the sealing portion 26.
- GaP phosphorous gallium
- First electrode 14B is formed to face the lower surface and the upper surface of the LED chip 12, respectively.
- A is electrically connected to the first lead 52A via a conductive paste fixing paste material 13 such as an Ag paste material, and the second electrode 14B is connected to the second lead 15A via a wire 15B. Electrically connected to lead 52B.
- the sealing portion 26 has the two-layer structure of the first sealing portion 26A and the second sealing portion 16B, but is not limited to the two-layer structure.
- a laminated structure of three or more layers may be used.
- FIG. 19 is a schematic diagram of a white LED device which is a semiconductor light emitting device according to a seventh embodiment of the present invention. A schematic cross-sectional configuration is shown.
- the same components as those shown in FIGS. 1 and 7 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is selected as the substrate 31 and the front and back surfaces of the substrate 31, as in the fourth embodiment.
- Flip chip mounting is performed on the printed wiring board having at least the first wiring 32A and the second wiring 32B that are formed in a manner that the upper surface of the LED chip 12 faces the main surface of the board 31. .
- the sealing portion 26 includes a first sealing portion 26A that directly and semispherically covers the semiconductor light emitting device chip 12, and a second sealing portion 26A that directly and semispherically covers the first sealing portion 26A. And a sealing portion 26B.
- the first sealing portion 26A includes a base material 16a and a sealing material 16d made of a composite material including first fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a. And fluorescent material 16c.
- the second sealing portion 26B includes a base material 16a and a sealing material 16d that also has a composite material force including second fine particles 17b made of an inorganic material uniformly dispersed inside the base material 16a. And fluorescent material 16c.
- the material constituting the first sealing portion 26A and the second sealing portion 26B may be the same material as the material constituting the sealing portion 16 of the first embodiment.
- the refractive index of the first fine particles 16b is larger than the refractive index of the second fine particles 17b, and it is necessary to select a V ⁇ material.
- the refractive index value of the first sealing portion 26A on the inner side near the LED chip 12 is larger on the outer side far from the LED chip 12. This is larger than the refractive index value of the second sealing portion 26B.
- the outer shape of the first sealing portion 26A and the second sealing portion 26B Since both are made hemispherical by, for example, a potting method, total reflection of emitted light is further reduced.
- both the first sealing portion 26A and the second sealing portion 26B have a force that adds the fluorescent material 16c. Only one of them may be added.
- FIG. 20 shows a white semiconductor light emitting device according to a first modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the outer shape of the cross section of the first sealing portion 26A that directly covers the LED chip 12 is a quadrangular shape.
- the first sealing portion 26A can use a printing method as a method of forming the sealing material 16d, so that productivity is improved.
- FIG. 21 shows a white semiconductor light emitting device according to a second modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the semiconductor light emitting device 40C according to the second modified example includes a first sealing portion 26A that directly covers the LED chip 12, and a second sealing portion that covers the first sealing portion. Both of the outer shapes of the cross-sections of the sealing portion 26B are rectangular.
- the first sealing portion 26A can use a printing method as a method of forming the sealing material 16d, and the second sealing portion 26B can be formed by a transfer molding method. Productivity is improved. In addition, since the upper surface of the sealing portion 26 is flat, it can be easily handled as a device.
- FIG. 22 shows a white semiconductor light emitting device according to a third modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is hemispherical, and the first sealing portion
- the outer shape of the cross section of the second sealing portion 26B covering the stopper portion 26A is a quadrangular shape.
- FIG. 23 shows a white semiconductor light emitting device according to a fourth modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the LED chip 12 is flip-chip mounted on the bottom surface of the recess 51a in the case material 51 having the recess 51a.
- the cross-sectional shapes of the first sealing portion 26A that directly covers the LED chip 12 and the second sealing portion that covers the first sealing portion 26A are both quadrangular.
- the inner wall surface of 51 functions as a reflecting surface.
- the sealing portion 26 is formed with the first fine particles 16b and the first fine particles 16b.
- the light extraction efficiency can be improved also by the case material 51 and the shape of the case material 51 that can be obtained only by providing a difference in refractive index due to the second fine particles 17b.
- FIG. 24 is a white view showing a semiconductor light emitting device according to a fifth modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the LED chip 12 has the submount material 53 interposed on the bottom surface of the recess 51a in the case material 51 having the recess 51a. Flip chip mounted.
- the LED chip 12 is mounted on a flip chip on a submount material 53 having, for example, ceramic power, on which at least a first submount electrode 54A and a second submount electrode 54 are formed on the upper surface.
- the first sealing portion 26A is formed so as to cover the LED chip 12 by a printing method.
- the submount material 53 having the LED chip 12 sealed in the first sealing portion 26A is mounted on the bottom surface of the case material 51, and the first submount electrode 54A formed on the top surface of the submount material 53.
- the pole 54A is electrically connected to the first lead 52A through the first wire 15A
- the second submount electrode 54B is electrically connected to the second lead 52B through the second wire 15B. It is connected.
- a Zener diode may be used for the submount material 53.
- FIG. 24 shows a case where the outer shape of the cross section of the first sealing portion 26A is a square shape.
- the outer shape of the first sealing portion 26A may be hemispherical.
- FIG. 25 shows a white light emitting semiconductor light emitting device according to a sixth modification of the seventh embodiment of the present invention.
- a schematic cross-sectional configuration of an LED device is shown.
- the LED chip 12 is flip-chip mounted and fixed on the bottom surface of the recess 51a in the case material 51 having the recess 51a. .
- the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is hemispherical, and the outer shape of the cross section of the second sealing portion 26B that covers the first sealing portion 26A Is a square shape.
- FIG. 26 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a seventh modification of the seventh embodiment of the present invention.
- the semiconductor light emitting device 60C according to the seventh modification includes the fine particles 16b attached to the sealing material 16d of the second sealing portion 26B as the first sealing portion.
- the composition is the same as that of the fine particles 16b added to the sealing material 16d of 26A, and the ratio of the fine particles 16b in the first sealing portion 26A to the sealing material 16d is determined by the ratio of the fine particles in the second sealing portion 26B. It is higher than the ratio of 16b to the sealing material 16d. That is, the additive concentration of the fine particles 16b in the second sealing portion 26B is made smaller than the additive concentration of the fine particles 16b in the first sealing portion 26A.
- a concentration gradient may be provided, or the concentration may be changed stepwise.
- the refractive index power of the second sealing portion 26B is larger than the refractive index of the first sealing portion 26A. Get smaller.
- an inorganic material having the same composition is used for the fine particles 16b added to the first sealing portion 26A and the fine particles 16b added to the second sealing portion 26B.
- the fine particles added to the first sealing portion 26A The composition and concentration of the fine particles 16b added to 16b and the second sealing portion 26B may be changed.
- FIG. 26 shows a case where the outer shape of the first sealing portion 26A that directly covers the LED chip 12 is a hemispherical shape, but it has been described in the fourth modification of the seventh embodiment.
- the outer shape of the cross section of the first sealing portion 26A may be a square shape.
- the sealing material 16d of the second sealing portion 26B is used.
- the added fine particles 17b are replaced with the fine particles 16b to have the same composition as the fine particles 16b added to the sealing material 16d of the first sealing portion 26A, and the fine particles 16b are sealed in the first sealing portion 26A.
- the proportion of the stopping material 16d may be higher than the proportion of the fine particles 16b in the second sealing portion 26B in the sealing material 16d.
- the fluorescent material 16c is added to the first sealing portion 26A and the second sealing portion 26B, and the deviation is added. But either one or the other! /.
- the sealing portion 26 has a two-layer structure of the first sealing portion 26A and the second sealing portion 16B, but is not limited to a two-layer structure.
- a laminated structure of three or more layers may be used.
- FIG. 27 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to an eighth embodiment of the present invention.
- the same components as those shown in FIGS. 1 and 6 are denoted by the same reference numerals, and the description thereof is omitted.
- the semiconductor light emitting device 30E is the same as that in the third embodiment.
- the LED chip 12 is mounted on a printed wiring board having a substrate 31 and at least a first wiring 32A and a second wiring 32B selectively formed on the front surface and the back surface of the substrate 31.
- a so-called junction up (face-up) mounting in which the back surface of the chip 12 is opposed to the main surface of the substrate 31 is 1.
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed in the base material 16a, and a fluorescent material 16c.
- the material constituting the sealing part 16 may be the same material as the material constituting the sealing part 16 of the first embodiment.
- the proportion of the fine particles 16b in the composite material is set so that the inner region near the LED chip 12 is higher than the outer region.
- the refractive index of GaN is Even if the refractive index of the sealing portion is set to about 1.8, which is the highest extraction efficiency by adding fine particles, the refractive index of the sealing portion and the refractive index of air The difference is large.
- the refractive index value of the inner region near the LED chip 12 in the sealing portion 16 is set larger than the refractive index value of the outer region. Specifically, by increasing the concentration of the fine particles 16b added to the sealing portion 16 in the inner region and decreasing the concentration of the fine particles 16b toward the outer side, the refractive index of the outer region of the sealing portion 16 can be increased. It is smaller than the area. At this time, the concentration of the fine particles 16b may be gradually lowered from the inside toward the outside, or may be lowered stepwise.
- the refractive index of the outer region of the sealing part 16 in contact with air is smaller than the refractive index of the inner region in contact with the LED chip 12, so that the outer region of the sealing part 16
- the difference between the refractive index and the refractive index of air is reduced.
- total reflection of the emitted light at the interface of the sealing part 16 with the air can be reduced, so that the light resistance and heat resistance of the sealing part 16 are improved and the light extraction efficiency is further improved. can do.
- the outer shape of the sealing portion 16 is made hemispherical by, for example, a potting method, the total reflection of the emitted light is further reduced.
- the liquid component before curing is reduced.
- potting may be performed by making the addition ratio of the fine particles 16b in the composite material for the outer region smaller than the addition ratio of the composite material for the inner region.
- the second and subsequent fine particles 16b other fine particles made of an inorganic material having a refractive index smaller than that of the first fine particles 16b may be selected.
- the configuration of the present embodiment can be formed by forming the sealing portion 16 that also has a composite material force by being cured.
- the force including the fluorescent material 16c in the sealing portion 16 As described above, in the case of a green LED device using a GaP-based semiconductor for the LED chip 12, the sealing is performed.
- the stop 16 need not include the fluorescent material 16c.
- FIG. 28 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first modification of the eighth embodiment of the present invention.
- the outer shape of the cross section of the sealing portion 16 in which the concentration of added calories of the fine particles 16b is gradually decreased outward is a square shape.
- the transfer molding method in which the additive calorie concentration of the fine particles 16b is smaller outside the sealing portion 16 than inside the sealing portion 16 is performed. Can be used.
- FIG. 29 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modification of the eighth embodiment of the present invention.
- the semiconductor light emitting device 50E according to the second modified example is similar to the fifth embodiment, in the case material 51 having the LED chip 12 force recess 5 la by the face-up method. It is fixed on the bottom surface of the recess 51a.
- the cross-sectional shape of the sealing portion 16A of the LED chip 12 is a quadrangular shape.
- the inner wall of the case material 51 is further metallized by vapor deposition of metal, for example, A1, etc.
- the inner wall surface of the case material 51 functions as a reflecting surface.
- the concentration of the fine particles 16b can be reduced.
- sealing portion 16 according to this modification can be formed by a plurality of potting methods.
- FIG. 30 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to the ninth embodiment of the present invention.
- the same components as those shown in FIGS. 1 and 7 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is selected as the substrate 31 and the front and back surfaces of the substrate 31, as in the fourth embodiment.
- Flip chip mounting is performed on the printed wiring board having at least the first wiring 32A and the second wiring 32B formed by making the upper surface of the LED chip 12 face the main surface of the board 31. .
- the sealing portion 16 includes a base material 16a, a sealing material 16d having a composite material force including fine particles 16b made of an inorganic material uniformly dispersed in the base material 16a, and a fluorescent material 16c.
- the material constituting the sealing part 16 may be the same material as that constituting the sealing part 16 of the first embodiment. However, in the ninth embodiment, the proportion of the fine particles 16b in the composite material is set so that the inner region near the LED chip 12 is higher than the outer region.
- the refractive index value of the inner region of the sealing portion 16 near the LED chip 12 is increased in the outer region. It becomes larger than the value of the refractive index.
- the refractive index of the outer region of the sealing part 16 in contact with air is smaller than the refractive index of the inner region in contact with the LED chip 12, so that the refractive index of the outer region of the sealing part 16 And the refractive index of air becomes smaller.
- the concentration of the fine particles 16b may be gradually decreased from the inside toward the outside, or may be gradually decreased.
- the outer shape of the sealing portion 16 is made hemispherical by, for example, a potting method, the total reflection of the emitted light is further reduced.
- potting may be performed by making the addition ratio of the fine particles 16b in the composite material for the outer region smaller than the addition ratio of the composite material for the inner region.
- the second and subsequent fine particles 16b other fine particles made of an inorganic material having a refractive index smaller than that of the first fine particles 16b may be selected.
- the configuration of the present embodiment can be formed by forming the sealing portion 16 that also has a composite material force by being cured.
- the outer shape of the sealing portion 16 is hemispherical, for example, by a potting method, total reflection of emitted light is further reduced.
- the force including the fluorescent material 16c in the sealing portion 16 As described above, in the case of a green LED device using a GaP-based semiconductor for the LED chip 12 or the like, the sealing portion It is not necessary for 16 to include fluorescent material 16c.
- FIG. 31 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a first modification of the ninth embodiment of the present invention.
- the semiconductor light emitting device 40F according to the first modified example has a quadrangular outer shape of the cross section of the sealing portion 16 in which the concentration of added particles of the fine particles 16b is gradually decreased outward. .
- the transfer molding method in which the added calorie concentration of the fine particles 16b is smaller outside the sealing portion 16 than inside the sealing portion 16 is performed. Can be used.
- FIG. 32 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modification of the ninth embodiment of the present invention.
- the LED chip 12 is flip-mounted on the bottom surface of the recess 51a in the case material 51 having the recess 51a.
- the cross-sectional shape of the sealing portion 16A of the LED chip 12 is a quadrangular shape.
- sealing portion 16 according to the present modification can be formed by a plurality of potting methods.
- the LED chip 12 is mounted on the bottom surface of the recessed portion 51a in the case material 51 having the recessed portion 51a.
- a configuration in which flip-chip mounting is performed with the material 53 interposed may be applied.
- FIG. 33 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to the tenth embodiment of the present invention.
- the same components as those shown in FIGS. 6 and 10 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is selectively applied to the substrate 31 and the front and back surfaces of the substrate 31.
- the so-called junction up (face up) mounting in which the back surface of the LED chip 12 faces the main surface of the substrate 31 is mounted.
- the sealing portion 26 includes a first sealing portion 26A that directly and semispherically covers the semiconductor light emitting device chip 12, and a second sealing portion 26A that directly and semispherically covers the first sealing portion 26A. And a sealing portion 26B.
- the first sealing portion 26A is made of a resin material mixed with the fluorescent material 16c, and the second sealing portion 26B is uniformly dispersed inside the base material 16a and the base material 16a.
- the sealing material 16d is made of a composite material containing the particles 16b.
- FIG. 34 shows a case where zirconium oxide (ZrO) having a diameter of 3 nm to 10 nm is used as the fine particles 16b to be added to the second sealing portion 26B, and the ratio of the fine particles 16b to the base material 16a is 30 volumes. %
- the semiconductor light emitting device 30G According to the semiconductor light emitting device 30G according to the tenth embodiment, the same effect as that of the first embodiment can be obtained, and the above-described filter effect can be used to cause a red region scan as shown in FIG.
- the petrol component increases relatively. That is, for the radiated light from the LED chip 12 and the synthesized light excited by the fluorescent material 16c, the spectral component in the blue region to the ultraviolet region is attenuated by the scattering of the fine particles 16b, and the spectral component in the red region is relative. Increase.
- the semiconductor light emitting device used for the measurement has a configuration in which the LED chip 12 is mounted on the case material 51 shown in FIG.
- the emitted light of the LED chip 12 is blue light having a peak wavelength of 460 nm
- the excitation light of the fluorescent material 16c is yellow light having a peak wavelength of 575 nm.
- the fluorescent material 16c is prepared by mixing an orange fluorescent material having a peak wavelength of 590 nm and a green fluorescent material having a peak wavelength of 535 nm.
- the average color rendering index Ra increases and the color temperature decreases.
- a high average color rendering index Ra indicates that the color reproducibility of an object illuminated under a certain light source is excellent, and a low color temperature indicates that the light source is warm. Show.
- the comparative example shows the case where the second sealing portion 26B is not provided
- the present invention 1 is the case where the thickness of the second sealing portion 26B including the fine particles 16b is 0.2 mm.
- the present invention 2 shows the case where the thickness of the second sealing portion 26B is 1 mm!
- a fluorescent material capable of obtaining green light or yellow light is added to both the first sealing portion 26A and the second sealing portion 26B. Also good. Even in this case, the fine particle 16b added to the second sealing portion 26B attenuates the spectral component in the ultraviolet region of the synthesized light, and the spectral component in the red region relatively increases.
- a first fluorescent material capable of obtaining green light or yellow light is added to the first sealing portion 26A, and the fine particles 16b and red light are added to the second sealing portion 26B.
- the obtained second fluorescent material may be added.
- the spectral component in the red region is further increased. This further increases the average color rendering index and further decreases the color temperature.
- a first fluorescent material capable of obtaining red light is added to the first sealing portion 26A.
- the fine particles 16b and a second fluorescent material capable of obtaining green light or yellow light may be added to the second sealing portion 26B.
- the first fluorescent material for red does not absorb the green light or yellow light that is the light emitted from the second fluorescent material, so the conversion efficiency of the emitted light from the LED chip 12 is improved.
- the refractive index of the first sealing portion 26A is made lower than the refractive index of the LED chip, and the second sealing is performed. It is preferable that the refractive index of the stop portion 26B be lower than the refractive index of the first sealing portion 26A. This improves the light extraction efficiency.
- the wavelength of the emitted light of the LED chip 12 is not in the blue region, the blue and purple regions of 410 nm or less to the ultraviolet region of 380 nm or less are used for the fluorescent materials for green and red or yellow.
- the above fluorescent material is added to at least the first sealing portion 26A, white synthetic light can be obtained.
- the outer shape of the semiconductor light emitting device 30G and the mounting method of the LED chip 12 are not limited to those in FIG. 33, and the second to sixth modifications, the first to fifth modifications of the sixth embodiment, or the seventh embodiment. It is good also as a structure similar to the 1st-6th modification of embodiment.
- FIG. 36 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a fourth modification of the tenth embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 14 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is placed on the bottom surface of the recess 51a in the case material 51 having the recess 51a, as in the fifth embodiment. It is fixed by the face-up method.
- the first sealing portion 26A is made of a resin material mixed with the fluorescent material 16c, and the second sealing portion 26B is uniformly dispersed inside the base material 16a and the base material 16a.
- the sealing material 16d is made of a composite material including fine particles 16b made of an inorganic material.
- the first sealing portion 26A is formed so as to be in contact with and cover the LED chip 12, while the second sealing portion 26B is the upper end surface of the case 51. Is provided in parallel with the bottom surface of the case 51, so that a gap 51b is formed between the first sealing portion 26A and the first sealing portion 26A. It is made.
- a first lens 70 that covers the first sealing portion 26A is formed in the gap portion 51b, and the second sealing portion 26B is provided on the second sealing portion 26B.
- a covering second lens portion 71 is formed.
- the first lens 70 and the second lens 71 are made of, for example, silicone resin, epoxy resin, olefin resin, acrylic resin, urea resin, imide resin, polycarbonate resin, or glass. be able to. Note that the second lens 71 is not necessarily provided.
- a potting method can be used as a method of forming the lenses 70 and 71 according to this modification. Further, the second sealing portion 26B can be formed by forming it in a force-feeding plate shape and fixing it to the upper end surface of the case 51.
- FIG. 37 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a fifth modification of the tenth embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 14 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 is attached to the case material 51 having the recess 51a. It is fixed on the bottom surface of the recess 51a by the face-up method.
- the first sealing portion 26A is made of a resin material mixed with the fluorescent material 16c, and the second sealing portion 26B is uniformly dispersed inside the base material 16a and the base material 16a.
- the sealing material 16d is made of a composite material including fine particles 16b made of an inorganic material.
- the first sealing portion 26A is formed so as to be in contact with and cover the LED chip 12, while the second sealing portion 26B is formed by the recess 51a of the case 51. 5 lb is formed in the upper part of the recess 5 la.
- a lens 70 is formed on the upper end surface of the case 51 so as to cover the gap 51b.
- the lens 70 is not necessarily provided.
- the lens 70 according to the present modification can be formed by preliminarily molding using a force mold and the like and fixing it to the upper end surface of the case 51.
- FIG. 38 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth modification of the tenth embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 37 are denoted by the same reference numerals, and the description thereof is omitted.
- the semiconductor light emitting device 80 is made of a heat-resistant grease material such as a liquid crystal polymer, and has at least the first lead 52A and the second lead.
- the lead 52B is fixed to the upper end portion, and has a reflecting portion 81a having a concave shape, that is, a hemispherical shape or a parabolic shape, and a reflector 81 also serving as a case.
- the LED chip 12 is fixed to the lower surface of the first lead 52A by the face-up method. That is, the LED chip 12 is mounted so that the upper surface thereof faces the bottom of the reflecting portion 81a.
- a phosphor layer 27 made of a resin material mixed with a phosphor 16c is formed on the reflecting surface of the reflector 81a, and a gap 8 is formed between the phosphor layer 27 and the LED chip 12. lb is formed.
- a sealing portion 16 is formed on the upper end surface of the reflector 81 so as to cover the gap 81b including the leads 52A and 52B.
- the sealing portion 16 includes the base material 16a and the base material 16a.
- a lens 70 is formed on the sealing portion 16.
- the lens 70 is not necessarily provided.
- the gap 81b of the reflector 81 may be filled with a sealing grease material, or may be the same thread and composite material as the sealing portion 16 or a composite having a different refractive index. Fill with material.
- FIG. 39 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to an eleventh embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 14 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 has the recess 5la in the case material 51 having the recess 5la, as in the fifth embodiment. It is fixed on the bottom by the face-up method.
- the sealing portion 26 directly covers the LED chip 12 and has a first sealing portion 26A filled in the lower portion of the concave portion 51a of the case material 51, and a layer shape above the first sealing portion 26A. And a second sealing portion 26B formed on the substrate.
- the first sealing portion 26A is composed of a base material 16a and a sealing material 16d that also has a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a.
- the second sealing portion 26B is made of a resin material mixed with the fluorescent material 16c.
- the same effect as in the first embodiment can be obtained, and when the synthesized light in the blue region to the ultraviolet region is attenuated, the filter effect As a result, the spectral component in the red region is relatively increased. As a result, the average color rendering index Increases and the color temperature decreases.
- the first sealing portion 26A and the second sealing portion 26B Both may be supplemented with a fluorescent material capable of obtaining green light or yellow light. Even in this case, the fine particle 16b added to the first sealing portion 26A attenuates the spectral component in the ultraviolet region of the synthesized light, and the spectral component in the red region relatively increases. .
- fine particles 16b and a first fluorescent material capable of obtaining green light or yellow light are added to the first sealing portion 26A, and red light is added to the second sealing portion 26B.
- the spectral component in the red region is further increased. This further increases the average color rendering index and further decreases the color temperature.
- fine particles 16b and a first fluorescent material capable of obtaining red light are added to the first sealing portion 26A, and green light or yellow light is added to the second sealing portion 26B.
- the first fluorescent material for red does not absorb the green light or yellow light that is the emitted light of the second fluorescent material, so the conversion efficiency of the emitted light from the LED chip 12 is improved.
- the refractive index of the first sealing portion 26A is made lower than the refractive index of the LED chip 12, and the second It is preferable that the refractive index of the sealing portion 26B is lower than the refractive index of the first sealing portion 26A. This improves the light extraction efficiency.
- the outer shape of the semiconductor light emitting device 50H and the mounting method of the LED chip 12 are not limited to those in FIG. 39, and the first to fifth of the second embodiment, the sixth embodiment, and the sixth embodiment.
- a configuration similar to that of the modified example, the seventh embodiment, or the first to sixth modified examples of the seventh embodiment may be employed.
- FIG. 40 shows a schematic cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth modification of the eleventh embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 14 are denoted by the same reference numerals, and the description thereof is omitted.
- the sealing portion 26 in the semiconductor light emitting device 501 according to the fourth modified example, as the sealing portion 26, the first sealing portion 26A as an underlayer formed below the LED chip 12 is used. And a second sealing portion 26B formed on the first sealing portion 26A so as to cover the LED chip 12 and filling the recess 51a of the case material 51.
- the first sealing portion 26A is formed on the bottom surface of the case material 51, and the LED chip 12 is a chip transparent to visible light on the first sealing portion 26. It is fixed on the fixing paste material 13 by the face-up method.
- a white heat-resistant grease material is used, or metallization is performed on the bottom surface and the inner wall surface of the recess 51a of the case material 51 by vapor deposition of metal, for example, aluminum (A1).
- the inner wall surface of the case material 51 is made to function as a reflecting surface.
- the first sealing portion 26A is composed of a base material 16a and a sealing material 16d that also has a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a.
- the second sealing portion 26B is made of a resin material mixed with the fluorescent material 16c.
- the first sealing portion 26A which is the base layer of the LED chip 12
- the fine particles 16b the heat dissipation of the LED chip 12 is improved.
- fine particles may be added to the second sealing portion 26B, and the second sealing portion 26B may be used as a composite material. In this case, it is preferable to select fine particles whose refractive index of the second sealing portion 26B is smaller than that of the first sealing portion 26A.
- FIG. 41 shows a white semiconductor light emitting device according to a fifth modification of the eleventh embodiment of the present invention.
- 1 shows a schematic cross-sectional configuration of an LED device.
- the same components as those shown in FIG. 38 are denoted by the same reference numerals, and the description thereof is omitted.
- the semiconductor light emitting device 80A is made of a heat resistant grease material such as a liquid crystal polymer, and has at least the first lead 52A and the second lead 52A.
- the lead 52B is fixed to the upper end portion, and has a reflecting portion 81a having a concave shape, that is, a hemispherical shape or a parabolic shape, and a reflector 81 also serving as a case.
- the reflector 81 is metallized with a force using a white heat-resistant resin material, or the reflection portion 81a with a metal such as aluminum.
- the LED chip 12 is fixed to the lower surface of the first lead 52A by the face-up method. That is, the LED chip 12 is mounted so that the upper surface thereof faces the bottom of the reflecting portion 81a.
- a phosphor layer 27 made of a resin material mixed with a phosphor 16c is formed on the reflecting surface of the reflector 81a, and a sealing portion is formed between the phosphor layer 27 and the LED chip 12.
- the sealing portion 16 filled with 16 is composed of a base material 16a and a sealing material 16d that also has a composite material force including fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a. ing.
- a lens 70 is formed on the upper end face of the reflector 81 so as to cover the gap 81b including the leads 52A and 52B.
- the lens 70 is not necessarily provided.
- the sealing part 16 has a two-layer structure of at least a first sealing part and a second sealing part as in the sixth embodiment, and is positioned outside the first sealing part.
- the refractive index of the second sealing portion may be lower than the refractive index of the first sealing portion!
- FIG. 42 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to the twelfth embodiment of the present invention.
- the same components as those shown in FIGS. 8 and 14 are denoted by the same reference numerals, and the description thereof is omitted.
- the LED chip 12 has the recess 5 la in the case material 51 having the recess 5 la. Fixed to the bottom of the face by the face-up method! RU
- the sealing portion 26 directly covers the LED chip 12 and is filled with a lower portion of the recess 51a of the case material 51, and a third sealing portion 26A is provided on the first sealing portion 26A.
- the second sealing portion 26B is formed in a layered manner with the sealing portion 26C interposed therebetween.
- the first sealing portion 26A and the second sealing portion 26B are a composite material including a base material 16a and first fine particles 16b made of an inorganic material uniformly dispersed in the base material 16a. It is composed of a sealing material 16d and a fluorescent material 16c.
- the third sealing portion 26C is composed of a base material 16a and an inorganic material such as zinc oxide, titanium oxide, or titanium cerium that is uniformly dispersed in the base material 16a and can absorb ultraviolet light.
- the sealing material 16d is made of a composite material including the second fine particles 17b.
- the same effect as in the first embodiment can be obtained, and the first sealing portion 26A and the second sealing portion 26B can be Since the third sealing portion 26C as an ultraviolet light absorbing layer that absorbs ultraviolet light is provided between them, the light component in the ultraviolet region included in the emitted light from the LED chip 12 is converted to the third sealing portion 26C. Is absorbed by. As a result, it is possible to use an epoxy resin that is excellent in water resistance and heat resistance while being easily yellowed by ultraviolet light, as the base material 16a constituting the second sealing portion 26B.
- the refractive index of the second sealing portion 26B is lower than the refractive index of the third sealing portion 26C, and the refractive index of the third sealing portion 26C is the first.
- a configuration in which the refractive index is lower than the refractive index of the sealing portion 26A is preferable.
- the first sealing portion 26A and the second sealing portion 26B do not necessarily include the second fine particles 17b.
- the fluorescent material 16c is not necessarily included in the first sealing portion 26A and the third sealing portion 26B. It may be included in either one of the sealing portions 26C.
- the first sealing portion 26A needs to include the fluorescent material 16c.
- the outer shape of the semiconductor light emitting device 50J and the mounting method of the LED chip 12 are not limited to FIG. 43, and the first to fifth of the second embodiment, the sixth embodiment, and the sixth embodiment. A configuration similar to that of the modified example, the seventh embodiment, or the first to sixth modified examples of the seventh embodiment may be employed.
- FIG. 43 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a thirteenth embodiment of the present invention.
- the same components as those shown in FIG. 8 are denoted by the same reference numerals, and the description thereof is omitted.
- the semiconductor light emitting device 50K according to the twelfth embodiment is similar to the fifth embodiment in that the LED chip 12 has the recess 5 la in the case material 51 having the recess 5 la. It is fixed on the bottom by the face-up method.
- the sealing portion 26 directly covers the LED chip 12 and is filled with the concave portion 51a of the case material 51, and the first sealing portion on the upper surface of the case material 51. And a second sealing portion 26B formed so as to cover 26A.
- the first sealing portion 26A includes a base material 16a and a sealing material 16d made of a composite material including the first fine particles 16b made of an inorganic material uniformly dispersed inside the base material 16a. And fluorescent material 16c.
- the second sealing portion 26B is composed of a base material 16a and an inorganic material such as zinc oxide, titanium oxide, or titanium cerium that is uniformly dispersed in the base material 16a and can absorb ultraviolet light.
- the sealing material 16d is made of a composite material including the second fine particles 17b. As described above, by using the composite material as the sealing material 16d, in addition to the effect of absorption of the fine particles 16b, the composite material easily scatters light having the wavelength of ultraviolet light. Extremely high.
- the semiconductor light emitting device 50K According to the semiconductor light emitting device 50K according to the thirteenth embodiment, the same effect as that of the first embodiment can be obtained, and the ultraviolet light that absorbs the ultraviolet light on the first sealing portion 26A can be obtained. Since the second sealing portion 26B as the absorption layer is provided, the light component in the ultraviolet region contained in the emitted light from the LED chip 12 is absorbed by the second sealing portion 26B. As a result, the semiconductor light emitting device 50 The K force can also prevent unnecessary ultraviolet light from being output.
- the sealing material 16d and the fluorescent material 16d by the ultraviolet light incident on the external force are used. It is possible to prevent the deterioration of the material 16c.
- the wavelength range of the emitted light of the LED chip 12 is not limited to the blue region force and the ultraviolet region, and therefore the semiconductor light emitting device 50K is not limited to the white LED device.
- the first sealing portion 26A does not necessarily include the first fine particles 16b.
- the outer shape of the semiconductor light emitting device 50K and the mounting method of the LED chip 12 are not limited to those shown in Fig. 43, and the same configuration as in the first to fourth embodiments may be adopted.
- FIG. 44 shows a schematic cross-sectional configuration of a white LED device which is a semiconductor light emitting device according to a modification of the thirteenth embodiment of the present invention.
- the semiconductor light emitting device 50L includes the second sealing portion 26B including the second fine particles 17 capable of absorbing ultraviolet light only on the upper surface of the case material 51. It is formed so as to cover the entire periphery of the case material 51 up to its side and bottom surfaces.
- the method of forming the second sealing portion 26B that covers the periphery of the case material 51 is, for example, a liquid sealing in which the second fine particles 17 are dispersed after the first sealing portion 26A is formed.
- the dipping method can be used soaking in the material 16d.
- the base material 16a of the stop portion 26A and the base material 16a of the second sealing portion 26B are made of the same material. This is preferable because the adhesion between the sealing portions can be improved and the sealing portion can be hardly peeled off. Since the effect of bonding between the base materials is relatively large in the adhesion between the sealing portions, the ratio of the base material is low when using a composite material as the sealing portion. The material of the material should be the same The adhesion can be improved.
- a white LED device has been mainly described as a semiconductor light emitting device.
- the present invention is not limited to a white LED device, and a sealing material to which fine particles are added. This is effective for semiconductor light-emitting devices that seal LED chips.
- the attenuation of the amount of transmitted light is reduced regardless of whether the sealing portion has a single-layer structure or a multilayer structure. Is preferred.
- the structure of the sealing part is to be controlled when color rendering is controlled as in the tenth embodiment, which is determined by the application, or when the LED chip contains ultraviolet light and it is desired to remove the ultraviolet light. Attenuating light of the corresponding wavelength by the composite material.
- the degree of Rayleigh scattering caused by the composite material varies depending on the size of the fine particles, the mixed concentration of the fine particles, or the thickness of the sealing portion, and also varies depending on the wavelength of transmitted light. In particular, it has a feature that the degree of scattering increases as the wavelength becomes shorter. Therefore, the amount of transmitted light may be affected by the emission wavelength of the LED chip used or the composition of the sealing part made of the composite material.
- the composite material used for the sealing portion has a scattering degree of less than 0.3 at the emission wavelength of the semiconductor light emitting device, the transmission attenuation amount of the emitted light is reduced, and thus the light extraction efficiency is improved. To do. At this time, the Rayleigh scattering component in the transmittance of the sealing portion is less than about 25%.
- the degree of scattering when the degree of scattering is 0.2 or less, the amount of light transmission attenuation decreases, and the light extraction efficiency is improved.
- the Rayleigh scattering component of the transmittance at this time is about 20% or less.
- the Rayleigh scattering component of the transmittance when the scattering degree is 0.1 or less, the Rayleigh scattering component of the transmittance is about 10% or less, and when the scattering degree is 0.05 or less, the Rayleigh scattering component of the transmittance is 5% or less. It is almost transparent to the extent that light transmission attenuation is not a problem.
- the degree of scattering is a value represented by the product at of the Rayleigh scattering extinction coefficient ex of the composite material portion and its thickness.
- In is the natural logarithm.
- the Rayleigh scattering extinction coefficient a is the scattering degree. Dividing by the thickness can be obtained from here.
- the Rayleigh scattering extinction coefficient ⁇ is a material parameter determined by the material composition depending on the particle diameter, refractive index, or mixing amount of the fine particles. Knowing the value of this Rayleigh scattering extinction coefficient oc, the thickness of the sealing portion, etc. The optical design of these devices can be performed easily.
- Halophosphate phosphor (Sr, Ba) (PO) CI: Eu 2+ , Sr (PO) CI: Eu 2+
- Aluminate phosphor (Ba, Sr, Ca) Al O: Eu 2+
- Oxonitridosilicate (Ba, Sr, Ca) Si O N: Eu
- Oxonitridoaluminosilicate (Ba, Sr, Ca) Si AION: Ce 3+ , (Ba, Sr, Ca)
- Nitridosilicate phosphor (Ba, Sr, Ca) Si N: Ce 3
- Garnet phosphor Ca Sc Si O: Ce 3+ , BaY SiAl O: Ce 3+ , Y (Al, Ga)
- Silicate (silicate) phosphor (Sr, Ba) SiO: Eu 2+
- Sulfide phosphor (Sr, Ca) S: Eu 2+ , La OS: Eu 3+ , Sm 3+
- Silicate (silicate) phosphor Ba MgSi O: Eu 2+ , Mn 2+
- Nitride or oxynitride phosphor (Ca, Sr) SiN: Eu 2+ , (Ca, Sr) AlSiN: Eu 2+ ,
- a wavelength conversion material such as a metal complex, an organic dye, or a pigment can be used.
- fine particles added to a light-transmitting material have improved thixotropy (thixotropy), light scattering effect, adjustment of the refractive index of the sealing material, and thermal conductivity.
- the effect of improvement can be expected.
- the fine particles for example, BaSO, ZnS, V 2 O 3, or a mixture thereof can be used as the metal compound other than those described in the first embodiment.
- the center particle diameter of the particles is from several 1 Onm to several 1 OOnm.
- the substrate 31 or the base on which the LED chip 12 is mounted is made of A1N, Al as ceramics.
- the base material 16a of the sealing material 16d includes as the resin: epoxy resin, silicone resin, acrylic resin, urea resin, imide resin, polycarbonate resin, polysulfide resin, liquid crystal Polymer resin or acrylic-tolyl-butadiene-styrene (ABS) resin or mixtures containing at least two of these can be used.
- resin epoxy resin, silicone resin, acrylic resin, urea resin, imide resin, polycarbonate resin, polysulfide resin, liquid crystal Polymer resin or acrylic-tolyl-butadiene-styrene (ABS) resin or mixtures containing at least two of these can be used.
- quartz or heat-resistant hard glass can be used as the cap glass.
- low melting point glass can be used!
- Nitrogen, argon, or dry air can be used as a sealing gas for sealing the LED chip.
- the present invention provides a semiconductor light-emitting device comprising a long-life and high-brightness LED or the like, and a semiconductor light-emitting device in which a semiconductor chip on which a light-emitting element is formed is packaged by resin sealing Useful.
Abstract
Description
Claims
Priority Applications (4)
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JP2007529479A JPWO2007018039A1 (ja) | 2005-08-05 | 2006-07-27 | 半導体発光装置 |
EP06781755A EP1919000A1 (en) | 2005-08-05 | 2006-07-27 | Semiconductor light-emitting device |
US11/995,924 US7910940B2 (en) | 2005-08-05 | 2006-07-27 | Semiconductor light-emitting device |
US13/025,758 US20110133237A1 (en) | 2005-08-05 | 2011-02-11 | Semiconductor light-emitting device |
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JP2005-228748 | 2005-08-05 | ||
JP2005228748 | 2005-08-05 | ||
JP2006-164958 | 2006-06-14 | ||
JP2006164958 | 2006-06-14 |
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US13/025,758 Continuation US20110133237A1 (en) | 2005-08-05 | 2011-02-11 | Semiconductor light-emitting device |
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EP (1) | EP1919000A1 (ja) |
JP (1) | JPWO2007018039A1 (ja) |
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TW200721540A (en) | 2007-06-01 |
US20110133237A1 (en) | 2011-06-09 |
JPWO2007018039A1 (ja) | 2009-02-19 |
US7910940B2 (en) | 2011-03-22 |
KR20080049011A (ko) | 2008-06-03 |
US20090256166A1 (en) | 2009-10-15 |
EP1919000A1 (en) | 2008-05-07 |
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