JP2007157831A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2007157831A JP2007157831A JP2005347996A JP2005347996A JP2007157831A JP 2007157831 A JP2007157831 A JP 2007157831A JP 2005347996 A JP2005347996 A JP 2005347996A JP 2005347996 A JP2005347996 A JP 2005347996A JP 2007157831 A JP2007157831 A JP 2007157831A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Microelectronics & Electronic Packaging (AREA)
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- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
【解決手段】350nm〜420nmの発光ピーク波長を有する発光素子と、この発光素子からの光を吸収して、異なる発光ピーク波長を有する蛍光を放射する蛍光体とを備える発光装置であって、前記蛍光体は、バンドギャップ間の遷移によって発光ピーク波長が制御されるような半導体材料にて形成され、この発光ピーク波長が異なる4つ以上の蛍光により構成されている発光装置。
【選択図】図1
Description
(b)複数の蛍光体の発光ピーク波長のうち少なくとも1つが500nm〜540nmの範囲に選ばれる、
(c)複数の蛍光体の発光ピーク波長のうち少なくとも1つが600nm〜680nmの範囲に選ばれる、
(d)複数の蛍光体の発光ピーク波長のうち少なくとも1つが540nm〜560nmの範囲に選ばれる、
(e)前記複数の蛍光体の発光ピーク波長のうち少なくとも2つは570nm〜610nmの範囲と610nm〜650nmの範囲に選ばれる。
(b)複数の蛍光体の発光ピーク波長のうち少なくとも1つが500nm〜540nmの範囲に選ばれる、
(c)複数の蛍光体の発光ピーク波長のうち少なくとも1つが600nm〜680nmの範囲に選ばれる、
(d)複数の蛍光体の発光ピーク波長のうち少なくとも1つが540nm〜560nmの範囲に選ばれる。
Claims (15)
- 350nm〜420nmの発光ピーク波長を有する発光素子と、この発光素子からの光を吸収して、異なる発光ピーク波長を有する蛍光を放射する蛍光体とを備える発光装置であって、
前記蛍光体は、バンドギャップ間の遷移によって発光ピーク波長が制御されるような半導体材料にて形成され、この発光ピーク波長が異なる4つ以上の蛍光により構成されている発光装置。 - 前記蛍光体は量子効果が生じるナノサイズの粒子径からなり、この効果によって形成される量子準位間の遷移によって発光ピーク波長が制御されることを特徴とする請求項1に記載の発光装置。
- 発光素子は窒化物半導体を含む発光ダイオードまたは半導体レーザであることを特徴とする請求項1に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長は430nm〜760nmの範囲に選ばれることを特徴とする請求項1に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長は、略等間隔に配置されることを特徴とする請求項4に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長のうち少なくとも1つは440nm〜480nmの範囲に選ばれることを特徴とする請求項4または5に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長のうち少なくとも1つは500nm〜540nmの範囲に選ばれることを特徴とする請求項4または5に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長のうち少なくとも1つは600nm〜680nmの範囲に選ばれることを特徴とする請求項4または5に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長のうち少なくとも1つは540nm〜560nmの範囲に選ばれることを特徴とする請求項4または5に記載の発光装置。
- 前記複数の蛍光体の発光ピーク波長のうち少なくとも2つは570nm〜610nmの範囲と610nm〜650nmの範囲に選ばれることを特徴とする請求項4または5に記載の発光装置。
- 発光素子と、
発光素子が実装されたリードフレームと、
発光素子およびリードフレームに設けられた電力供給部との間を電気的に接続するワイヤーと、
発光素子から放射される励起光が照射される、光透過性樹脂中に分散された蛍光体とを備えることを特徴とする請求項1〜10のいずれかに記載の発光装置。 - 発光素子が前記光透過性樹脂により覆われていることを特徴とする請求項11に記載の発光装置。
- 前記光透過性樹脂中に分散された蛍光体より放射される蛍光が空間に放射される光放射状態を制御し得る、光透過性樹脂からなる光学部をさらに備えることを特徴とする請求項12に記載の発光装置。
- 発光素子と、
発光素子から放射される励起光が光学的に結合される導光体と、
励起光が導光体に光学的に結合される領域以外の領域に、少なくとも、前記蛍光体が分散された光透明性樹脂からなる光学部を含むことを特徴とする請求項1〜13のいずれかに記載の発光装置。 - 前記導光体は光ファイバ構造からなることを特徴とする請求項14に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005347996A JP2007157831A (ja) | 2005-12-01 | 2005-12-01 | 発光装置 |
US11/606,901 US7679277B2 (en) | 2005-12-01 | 2006-12-01 | Light emitting device provided with semiconducting phosphor configured with four fluorescences having different emission peak wavelengths |
Applications Claiming Priority (1)
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JP2005347996A JP2007157831A (ja) | 2005-12-01 | 2005-12-01 | 発光装置 |
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JP2007157831A true JP2007157831A (ja) | 2007-06-21 |
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JP2005347996A Pending JP2007157831A (ja) | 2005-12-01 | 2005-12-01 | 発光装置 |
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JP (1) | JP2007157831A (ja) |
Cited By (7)
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JP2009021506A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法 |
JPWO2009028656A1 (ja) * | 2007-08-30 | 2010-12-02 | 日亜化学工業株式会社 | 発光装置 |
JP2011524064A (ja) * | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | 量子閉じ込め半導体ナノ粒子を含有する固体照明装置 |
JP2012009712A (ja) * | 2010-06-25 | 2012-01-12 | Sharp Corp | 発光装置および照明装置 |
JP2014187077A (ja) * | 2013-03-21 | 2014-10-02 | Sharp Corp | 発光装置 |
JP2018534784A (ja) * | 2015-07-30 | 2018-11-22 | パシフィック ライト テクノロジーズ コーポレイション | 低カドミウムナノ結晶量子ドットヘテロ構造 |
WO2019004119A1 (ja) * | 2017-06-28 | 2019-01-03 | 京セラ株式会社 | 発光装置および照明装置 |
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US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
US7910940B2 (en) * | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
US8361823B2 (en) * | 2007-06-29 | 2013-01-29 | Eastman Kodak Company | Light-emitting nanocomposite particles |
JP5000479B2 (ja) * | 2007-12-27 | 2012-08-15 | シャープ株式会社 | 面光源、表示装置及びその製造方法 |
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JP2011040486A (ja) * | 2009-08-07 | 2011-02-24 | Sharp Corp | 発光装置および画像表示装置 |
WO2011020098A1 (en) | 2009-08-14 | 2011-02-17 | Qd Vision, Inc. | Lighting devices, an optical component for a lighting device, and methods |
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JP2009021506A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法 |
JPWO2009028656A1 (ja) * | 2007-08-30 | 2010-12-02 | 日亜化学工業株式会社 | 発光装置 |
JPWO2009028657A1 (ja) * | 2007-08-30 | 2010-12-02 | 日亜化学工業株式会社 | 発光装置 |
JP2011524064A (ja) * | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | 量子閉じ込め半導体ナノ粒子を含有する固体照明装置 |
JP2012009712A (ja) * | 2010-06-25 | 2012-01-12 | Sharp Corp | 発光装置および照明装置 |
JP2014187077A (ja) * | 2013-03-21 | 2014-10-02 | Sharp Corp | 発光装置 |
JP2018534784A (ja) * | 2015-07-30 | 2018-11-22 | パシフィック ライト テクノロジーズ コーポレイション | 低カドミウムナノ結晶量子ドットヘテロ構造 |
WO2019004119A1 (ja) * | 2017-06-28 | 2019-01-03 | 京セラ株式会社 | 発光装置および照明装置 |
JPWO2019004119A1 (ja) * | 2017-06-28 | 2020-04-16 | 京セラ株式会社 | 発光装置および照明装置 |
JP7025424B2 (ja) | 2017-06-28 | 2022-02-24 | 京セラ株式会社 | 発光装置および照明装置 |
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US7679277B2 (en) | 2010-03-16 |
US20070138932A1 (en) | 2007-06-21 |
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