CN101661983B - 发光二极管及其制备方法 - Google Patents

发光二极管及其制备方法 Download PDF

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CN101661983B
CN101661983B CN2008103042053A CN200810304205A CN101661983B CN 101661983 B CN101661983 B CN 101661983B CN 2008103042053 A CN2008103042053 A CN 2008103042053A CN 200810304205 A CN200810304205 A CN 200810304205A CN 101661983 B CN101661983 B CN 101661983B
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CN101661983A (zh
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张家寿
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Fuzhun Precision Industry Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/08—Ingredients agglomerated by treatment with a binding agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Abstract

本发明提供一种发光二极管，包括发光二极管晶粒以及封装体，该封装体包括包覆于该发光二极管晶粒外围的第一封装体及散布于第一封装体内的微米级第二封装体颗粒，该微米级第二封装体颗粒内散布有起散射作用的纳米粒子。与现有技术相比，本发明的发光二极管封装体内的纳米粒子具有散射作用，当光线遇到散射粒子时，光线产生多重散射，使得光线被扩散至较宽的角度范围，扩大发光二极管的出射角。本发明还公开一种发光二极管的制备方法。

Description

发光二极管及其制备方法
技术领域
本发明涉及一种发光二极管，尤指一种发光二极管的封装改良结构及制备方法。
背景技术
随着科学技术的进步，从一般钨丝灯发展到现在的冷阴极荧光灯管(ColdCathode Fluorescent Lamp，CCFL)及发光二极管(Light Emitting Diode，LED)，皆是朝向体积缩小的方向发展。
而目前CCFL因为体积几乎是不能再缩小，而且CCFL升压到600伏特电压时会发生干扰，另外CCFL会造成汞污染的问题，使得部分国家也将予以禁用。而LED具有环保、亮度高、省电、寿命长等诸多特点，所以LED将渐渐取代CCFL。然，发光二极管均为向正前方射出光线，出射角度较小，不能满足大角度出光的需求。
发明内容
鉴于此，有必要提供一种出射角度较大的发光二极管及其制备方法。
一种发光二极管，包括发光二极管晶粒以及封装体，该封装体包括包覆于该发光二极管晶粒外围的第一封装体及散布于第一封装体内的微米级第二封装体颗粒，该微米级第二封装体颗粒内散布若干起散射作用的纳米粒子。
一种发光二极管的制备方法，包括以下步骤：提供融化的透光材料、溶剂及纳米粒子，将透光材料、溶剂及纳米粒子混合形成一混合溶液；使混合溶液发生聚合反应形成微米级颗粒，所得到的微米级颗粒的融化温度高于透光材料的融化温度，该微米级颗粒内散布有纳米粒子；提供融化的透光材料，将微米级颗粒加入到融化的透光材料中；提供基座及发光二极管晶粒，将发光二极管晶粒固设于基座内，将融化且含有微米级颗粒的透光材料注入基座内并降温固化成含有微米级颗粒的封装体，该封装体包覆于发光二极管晶粒的外围形成发光二极管。
与现有技术相比较，本发明的发光二极管封装体内的纳米粒子具有散射作用，当光线遇到散射粒子时，光线产生多重散射，使得光线被扩散至较宽的角度范围，扩大发光二极管的出射角。
附图说明
图1为本发明发光二极管一较佳实施例的剖面示意图。
图2为本发明发光二极管封装体的制备方法的一较佳实施例的流程示意图。
具体实施方式
如图1所示，发光二极管1包括基座2、发光二极管晶粒3及封装体4。基座2由绝缘材料制成，包括上表面21及下表面22，上表面21与下表面22相对设置，基座2的中央开设有一盲孔23，基座2于盲孔23的外围形成一内壁面231，基座2于盲孔23的底部形成一底面232。该盲孔23提供发光二极管晶粒3及封装体4的容置空间，其上宽下窄，基座2的内壁面231自上表面21向底面232方向并沿径向向内倾斜，自基座2的底面232向下开设相互隔开的第一导电柱24及第二导电柱25，第一导电柱24及第二导电柱25分别自底面232贯通至下表面22，底面232设置相互隔开的第一内电极28及第二内电极29，下表面22设置相互绝缘的第一外电极26及第二外电极27，第一内电极28及第一外电极26分别位于第一导电柱24的二端并通过第一导电柱24电连接，第二内电极29及第二外电极27分别位于第二导电柱25的二端并通过第二导电柱25电连接。
发光二极管晶粒3固设于第一内电极28上，发光二极管晶粒3包括第一电极31及第二电极32，第一电极31与第一内电极28电连接，第二电极32通过一导线5与第二内电极29电连接。
封装体4填充于基座2的盲孔23内，封装体4包括第一封装体41及若干呈球状的第二封装体颗粒42，第一封装体41包覆于发光二极管晶粒3的外围，第二封装体颗粒42散布于第一封装体41内，第二封装体颗粒42的折射率大于第一封装体41的折射率，且第二封装体颗粒42的融化温度大于第一封装体41的融化温度。第一封装体41由透光材料制成，如环氧树脂、硅胶、压克力等。第二封装体颗粒42为微米级球状颗粒，第二封装体颗粒42内分布若干纳米粒子43，纳米粒子43为Al2O3、SiOx或TiOx，x值介于1～2之间，纳米粒子43大小为2纳米～20纳米之间。当发光二极管1发出的光线射到第二封装体颗粒42时，由于第二封装体颗粒42的折射率大于第一封装体41的折射率，这可避免发生全反射，光线均可射入第二封装体颗粒42中，光线进入第二封装体颗粒42后，由于纳米粒子43具有散射作用，当光线遇到纳米粒子43时，光线产生多重散射，使得光线被扩散至较宽的角度范围。
进一步而言，本发明将纳米粒子43分布于微米级的第二封装体颗粒42，原因是纳米粒子43之间存在表面力，如果直接将纳米粒子43添入第一封装体41内，纳米粒子43容易出现聚集现象，造成发光二极管1的封装体4内纳米粒子43分布不均匀，这会使得纳米粒子43密集的区域光线出射角较大，而纳米粒子43稀少的区域光线出射角度较小，从而导致发光二极管1出光不均匀，亦不能达到增加出光角度的作用。本发明所采用的第二封装体颗粒为微米级颗粒，其表面力较少，则第二封装体颗粒42分布于第一封装体41内时不会出现聚集现象，本发明先通过将纳米粒子43加入到微米级的第二封装体颗粒42中，再将第二封装体颗粒42分布于第一封装体41内，使得纳米粒子43均匀分布于第一封装体41内，既可散射发光二极管1发出的光线，增加出射角，又可避免纳米粒子43聚集导致出光不均匀。
如图2所示，以乳化聚合法为例描述发光二极管封装体的制备方法，包括以下步骤：
提供互相溶解的透光材料、溶剂及纳米粒子，将融化的透光材料、溶剂及纳米粒子混合形成一混合溶液，其中溶剂包括水、乳化剂，乳化剂为十二烷基硫酸钠；
搅拌并加热混合溶液，使得混合溶液发生乳化聚合反应形成微米级颗粒，微米级颗粒内散布有若干纳米粒子，所得到的微米级颗粒的融化温度大于透光材料的融化温度，且微米级颗粒的折射率大于透光材料的折射率，该微米级颗粒作为发光二极管1的第二封装体颗粒42；
提供融化的透光材料，将微米级颗粒加入到融化的透光材料中，并搅拌均匀，使得微米级颗粒均匀散布于融化的透光材料中；
将已经融化且含有微米级颗粒的透光材料注入到发光二极管1的基座2内并降温固化成封装体4，封装体4包覆于发光二极管晶粒3的外围形成发光二极管。
另，本领域技术人员还可于本发明精神内做其它变化，如采用悬浮聚合法制备微米级颗粒，采用悬浮聚合法时采用分散剂替代乳化剂，分散剂为聚氧乙烯、聚乙烯基或聚丙烯酸中一种，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (9)

1.一种发光二极管，包括发光二极管晶粒以及封装体，其特征在于，该封装体包括包覆于该发光二极管晶粒外围的第一封装体及散布于第一封装体内的微米级第二封装体颗粒，该微米级第二封装体颗粒内散布若干起散射作用的纳米粒子。
2.根据权利要求1所述的发光二极管，其特征在于，纳米粒子大小为2纳米～20纳米之间。
3.根据权利要求2所述的发光二极管，其特征在于，纳米粒子为Al2O3、SiOx或TiOx，x值介于1～2之间。
4.根据权利要求1所述的发光二极管，其特征在于，该第二封装体颗粒通过聚合反应制成，第二封装体颗粒的融化温度大于第一封装体的融化温度。
5.根据权利要求1所述的发光二极管，其特征在于，该第二封装体颗粒的折射率大于第一封装体的折射率。
6.根据权利要求1所述的发光二极管，其特征在于，第一封装体的材料为压克力、环氧树脂或有机硅中一种。
7.一种发光二极管的制备方法，包括以下步骤：
提供融化的透光材料、溶剂及纳米粒子，将透光材料、溶剂及纳米粒子混合形成一混合溶液；
使混合溶液发生聚合反应形成微米级颗粒，所得到的微米级颗粒的融化温度高于透光材料的融化温度，该微米级颗粒内散布有纳米粒子；
提供融化的透光材料，将微米级颗粒加入到融化的透光材料中；
提供基座及发光二极管晶粒，将发光二极管晶粒固设于基座内，将融化且含有微米级颗粒的透光材料注入基座内并降温固化成含有微米级颗粒的封装体，该封装体包覆于发光二极管晶粒的外围形成发光二极管。
8.根据权利要求7所述的发光二极管的制备方法，其特征在于，该聚合反应采用乳化聚合法，该溶剂包括水及乳化剂，乳化剂为十二烷基硫酸钠。
9.根据权利要求7所述的发光二极管的制备方法，其特征在于，该聚合反应采用悬浮聚合法，该溶剂包括水及分散剂，分散剂为聚氧乙烯、聚乙烯基或聚丙烯酸。
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