CN101740680A - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN101740680A
CN101740680A CN200810305692A CN200810305692A CN101740680A CN 101740680 A CN101740680 A CN 101740680A CN 200810305692 A CN200810305692 A CN 200810305692A CN 200810305692 A CN200810305692 A CN 200810305692A CN 101740680 A CN101740680 A CN 101740680A
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Prior art keywords
packaging body
light
emitting diode
diode according
refractive index
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张家寿
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Priority to CN200810305692A priority Critical patent/CN101740680A/zh
Priority to US12/412,370 priority patent/US20100127291A1/en
Publication of CN101740680A publication Critical patent/CN101740680A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管，包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的第一封装体，该第一封装体包括一出光面，该出光面上开设若干凹陷，于该凹陷内填充第二封装体，该出光面未开设凹陷部分设置由第二封装体的材料制成的若干凸起，凹陷与凸起呈相间排列。与现有技术相比，本发明的第一封装体的出光面上设置凹凸相间的第二封装体，可降低全反射效应，增加光取出率。

Description

发光二极管
技术领域
本发明涉及一种发光二极管，特别是涉及一种发光二极管的封装改良结构。
背景技术
发光二极管(Light Emitting Diode，LED)具有环保、亮度高、省电、寿命长等诸多特点，将渐渐成为主要照明光源。然，LED发出的光线于发光二极管的封装体与外界空气的界面容易发生全反射，使得发光二极管出光不均匀。
发明内容
鉴于此，有必要提供一种出光均匀的发光二极管。
一种发光二极管，包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的第一封装体，该第一封装体包括一出光面，该出光面上开设若干凹陷，于该凹陷内填充第二封装体，该出光面未开设凹陷部分设置由第二封装体的材料制成的若干凸起，凹陷与凸起呈相间排列。
与现有技术相比，本发明的第一封装体的出光面上设置凹凸相间的第二封装体，可降低全反射效应，增加光取出率。
附图说明
图1为本发明的发光二极管的一较佳实施例的剖面示意图。
具体实施方式
如图1所示，发光二极管包括一基座10、一发光二极管晶粒20及第一封装体30。基座10包括相对设置的上表面11及下表面12。基座10的中央开设有一盲孔13，基座10于盲孔13的外围形成一内壁面131，基座10于盲孔13的底部形成一底面132。该盲孔13提供发光二极管晶粒20及第一封装体30的容置空间，其上宽下窄，基座10的内壁面131自上表面11向底面132方向并沿径向向内倾斜，相互隔开的第一导电柱24及第二导电柱25分别由基座10的底面132向下开设并贯通基座10，即第一导电柱24及第二导电柱25分别自底面132贯通至下表面22。相互隔开的第一内电极28及第二内电极29设置于底面132，相互绝缘的第一外电极26及第二外电极27设置于下表面12上，第一内电极28及第一外电极26分别位于第一导电柱24的二端并通过第一导电柱24电连接，第二内电极29及第二外电极27分别位于第二导电柱25的二端并通过第二导电柱25电连接。
发光二极管晶粒20固设于基座10的底面132且位于基座10的中心，发光二极管晶粒20包括第一电极21及第二电极22，第一电极21通过导线4与基座10的第一内电极28电连接，第二电极22固设于基座10的第二内电极29电连接。
第一封装体30由透光材料制成，如环氧树脂、硅胶、压克力等。该第一封装体30包覆于发光二极管晶粒20的外围。该第一封装体30的顶端为出光面31，该出光面31为平面，发光二极管晶粒20发出的光线由出光面31射向外界空气中。
出光面31上开设若干凹陷32，凹陷32内填充第二封装体，出光面31上未开设凹陷32的部分设置若干由第二封装体的材料制成的凸起33，凹陷32与凸起33呈相间排列，使得出光面31呈凹凸不平状。第二封装体的折射率小于第一封装体30的折射率而大于空气的折射率，第一封装体30及第二封装体均由透光材料制成，如环氧树脂、硅胶、压克力等。可通过向第一封装体30及第二封装体内参杂不同浓度的高折射率纳米粒子或分子团以改变折射率，纳米粒子可为氧化钛、氧化钽及氧化硅，分子团可为酚类等。在本实施例中，第一封装体30及第二封装体中均参杂氧化钛，且第一封装体30中氧化钛的浓度大于第二封装体中氧化钛的浓度，从而第一封装体30的折射率大于第二封装体的折射率。进一步而言，凸起33内还参杂荧光粉。
一方面，第一封装体30的出光面31由于呈凹凸不平状结构，进而减少全反射，使得更多光线从第一封装体30的出光面31射出，增加出光面积及出光效率；另一方面，第二封装体的折射率介于第一封装体30及外界空气的折射率之间，则第二封装体与外界空气之间折射率差值较少，减少第二封装体与外界空气的界面出现全反射的概率。

Claims (9)

1.一种发光二极管，包括一发光二极管晶粒以及包覆于该发光二极管晶粒外围的第一封装体，其特征在于，该第一封装体包括一出光面，该出光面上开设若干凹陷，于该凹陷内填充第二封装体，该出光面未开设凹陷部分设置由第二封装体的材料制成的若干凸起，凹陷与凸起呈相间排列。
2.根据权利要求1所述的发光二极管，其特征在于，第二封装体的折射率小于第一封装体的折射率而大于空气的折射率。
3.根据权利要求1所述的发光二极管，其特征在于，该凸起内参杂荧光粉。
4.根据权利要求1所述的发光二极管，其特征在于，第一封装体及第二封装体内均参杂高折射率纳米粒子。
5.根据权利要求4所述的发光二极管，其特征在于，该纳米粒子为氧化钛、氧化钽及氧化硅中一种。
6.根据权利要求1所述的发光二极管，其特征在于，第一封装体及第二封装体内参杂高折射率分子团。
7.根据权利要求6所述的发光二极管，其特征在于，该分子团为酚类。
8.根据权利要求1所述的发光二极管，其特征在于，还包括一基座，该基座的中央开设有一盲孔，发光二极管晶粒及第一封装体设置在该盲孔中。
9.根据权利要求1所述的发光二极管，其特征在于，该出光面为平面。
CN200810305692A 2008-11-21 2008-11-21 发光二极管 Pending CN101740680A (zh)

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CN200810305692A CN101740680A (zh) 2008-11-21 2008-11-21 发光二极管
US12/412,370 US20100127291A1 (en) 2008-11-21 2009-03-27 Light emitting diode

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CN200810305692A CN101740680A (zh) 2008-11-21 2008-11-21 发光二极管

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931329A (zh) * 2011-08-08 2013-02-13 展晶科技(深圳)有限公司 发光二极管封装结构

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8754440B2 (en) * 2011-03-22 2014-06-17 Tsmc Solid State Lighting Ltd. Light-emitting diode (LED) package systems and methods of making the same
CN102290501B (zh) * 2011-08-08 2013-03-27 中外合资江苏稳润光电有限公司 Led日光灯白光封装元件的制造方法
JP2014056896A (ja) * 2012-09-11 2014-03-27 Ns Materials Kk 半導体を利用した発光デバイス及びその製造方法
KR102011101B1 (ko) * 2012-12-26 2019-08-14 삼성전자주식회사 발광 소자 패키지
US20160126430A1 (en) * 2014-11-03 2016-05-05 Avago Technologies General Ip (Singapore) Pte. Ltd Light-emitting device with hardened encapsulant islands
US9793450B2 (en) * 2015-11-24 2017-10-17 Samsung Electronics Co., Ltd. Light emitting apparatus having one or more ridge structures defining at least one circle around a common center

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DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
JP3707688B2 (ja) * 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
MY152857A (en) * 2005-09-01 2014-11-28 Dominant Opto Tech Sdn Bhd Surface mount optoelectronic component with lens

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931329A (zh) * 2011-08-08 2013-02-13 展晶科技(深圳)有限公司 发光二极管封装结构
CN102931329B (zh) * 2011-08-08 2015-01-07 展晶科技(深圳)有限公司 发光二极管封装结构

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