JP2009033081A - 発光ダイオード装置 - Google Patents
発光ダイオード装置 Download PDFInfo
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- JP2009033081A JP2009033081A JP2007267530A JP2007267530A JP2009033081A JP 2009033081 A JP2009033081 A JP 2009033081A JP 2007267530 A JP2007267530 A JP 2007267530A JP 2007267530 A JP2007267530 A JP 2007267530A JP 2009033081 A JP2009033081 A JP 2009033081A
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- 239000000853 adhesive Substances 0.000 claims abstract description 87
- 230000001070 adhesive effect Effects 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000010432 diamond Substances 0.000 claims abstract description 8
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229920002050 silicone resin Polymers 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 11
- 239000012945 sealing adhesive Substances 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】基板200およびリードフレーム300は、ベース部100上に設けられている。LEDチップ400を基板200上に固着するために、第1の混合接着体510が基板200上に塗布されている。第2の混合接着体530は、基板200およびLEDチップ400を被覆するようにベース部100上に注入されている。第1の混合接着体510および第2の混合接着体530は、接着材料および絶縁熱伝導性材料を含んでおり、絶縁熱伝導性材料は、ダイヤモンドカーボン粉末、ダイヤモンドライクカーボン粉末、またはセラミックス粉末からなる。これにより、LEDチップ400と第2の混合接着体530との屈折率の差が低減し、全反射角が増加するため光出射効率が向上する。
【選択図】図3
Description
200 基板
300 リードフレーム
400 LEDチップ
510 第1の混合接着体
520 第2の混合接着体
530 第3の混合接着体
540 第4の混合接着体
550 第5の混合接着体
800 封止接着体
900 リード線
950 バンプ
960 パッド群
Claims (9)
- ベース部と、基板と、リードフレームと、LEDチップと、第1の混合接着体とを備え、前記基板および前記リードフレームが前記ベース部上に設けられるとともに、前記LEDチップが前記第1の混合接着体により前記基板上に固着された発光ダイオード装置であって、
前記第1の混合接着体は、接着材料および絶縁熱伝導性材料を含み、前記絶縁熱伝導性材料は、ダイヤモンドカーボン粉末、ダイヤモンドライクカーボン粉末、またはセラミックス粉末からなることを特徴とする発光ダイオード装置。 - 前記接着材料は、エポキシ樹脂、シリコーン樹脂、またはポリカーボネートからなることを特徴とする請求項1に記載の発光ダイオード装置。
- 前記セラミックス粉末は、酸化アルミニウム、窒化アルミニウム、窒化ボロン、または炭化シリコンからなることを特徴とする請求項2に記載の発光ダイオード装置。
- 前記第1の混合接着体と組成材質が同じであり、前記LEDチップおよび前記基板の側面を被覆した第2の混合接着体を更に備えたことを特徴とする請求項1に記載の発光ダイオード装置。
- 前記第1の混合接着体と組成材質が同じであり、前記ベース部上に注入されるとともに前記基板および前記LEDチップを被覆した第3の混合接着体を更に備えたことを特徴とする請求項1に記載の発光ダイオード装置。
- ベース部と、基板と、リードフレームと、LEDチップと、第1の混合接着体とを備え、前記基板および前記リードフレームが前記ベース部上に設けられるとともに、前記LEDチップがフリップチップ方式で前記基板上に実装され、前記第1の混合接着体が前記基板と前記LEDチップとの間に設けられた発光ダイオード装置であって、
前記第1の混合接着体は、接着材料および絶縁熱伝導性材料を含み、前記絶縁熱伝導性材料は、ダイヤモンドカーボン粉末、ダイヤモンドライクカーボン粉末、またはセラミックス粉末からなることを特徴とする発光ダイオード装置。 - 前記接着材料は、エポキシ樹脂、シリコーン樹脂、またはポリカーボネートからなることを特徴とする請求項6に記載の発光ダイオード装置。
- 前記セラミックス粉末は、酸化アルミニウム、窒化アルミニウム、窒化ボロン、または炭化シリコンからなることを特徴とする請求項7に記載の発光ダイオード装置。
- 前記第1の混合接着体と組成材質が同じであり、前記ベース部上に注入されるとともに前記基板および前記LEDチップを被覆した第2の混合接着体を更に備えたことを特徴とする請求項6に記載の発光ダイオード装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096127147 | 2007-07-25 | ||
TW096127147A TWI442595B (zh) | 2007-07-25 | 2007-07-25 | 發光二極體裝置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009033081A true JP2009033081A (ja) | 2009-02-12 |
JP5219445B2 JP5219445B2 (ja) | 2013-06-26 |
Family
ID=40294468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007267530A Expired - Fee Related JP5219445B2 (ja) | 2007-07-25 | 2007-10-15 | 発光ダイオード装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7872277B2 (ja) |
JP (1) | JP5219445B2 (ja) |
TW (1) | TWI442595B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011243713A (ja) * | 2010-05-18 | 2011-12-01 | Citizen Electronics Co Ltd | 発光装置 |
JP2013016576A (ja) * | 2011-07-01 | 2013-01-24 | Fuji Mach Mfg Co Ltd | 半導体パッケージ |
JP2014140072A (ja) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | 発光素子モジュール |
JP2015530750A (ja) * | 2012-09-24 | 2015-10-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
JP2016143847A (ja) * | 2015-02-05 | 2016-08-08 | 日亜化学工業株式会社 | 発光装置 |
JP2017028097A (ja) * | 2015-07-22 | 2017-02-02 | シャープ株式会社 | 発光装置および照明装置 |
JP2017143305A (ja) * | 2017-05-10 | 2017-08-17 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
WO2019117452A1 (ko) * | 2017-12-12 | 2019-06-20 | 삼성에스디아이 주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 장치 |
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TWI422058B (zh) * | 2008-03-04 | 2014-01-01 | Everlight Electronics Co Ltd | 發光二極體封裝結構與其製造方法 |
US8610357B2 (en) | 2009-05-28 | 2013-12-17 | Zon Led, Llc | LED assembly for a signage illumination |
US20110031887A1 (en) * | 2009-05-28 | 2011-02-10 | Stoll Arnold | Led lighting system |
US9048404B2 (en) * | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
JP2012049495A (ja) | 2010-01-29 | 2012-03-08 | Nitto Denko Corp | 発光ダイオード装置 |
TW201203477A (en) | 2010-01-29 | 2012-01-16 | Nitto Denko Corp | Power module |
JP5759192B2 (ja) * | 2010-01-29 | 2015-08-05 | 日東電工株式会社 | バックライトおよび液晶表示装置 |
US8450770B2 (en) * | 2010-05-11 | 2013-05-28 | Advanced Semiconductor Engineering, Inc. | Light emitting package structure |
WO2012061182A1 (en) | 2010-11-03 | 2012-05-10 | 3M Innovative Properties Company | Flexible led device with wire bond free die |
WO2012112873A2 (en) | 2011-02-18 | 2012-08-23 | 3M Innovative Properties Company | Flexible light emitting semiconductor device |
TWI459124B (zh) * | 2012-09-10 | 2014-11-01 | Shinyoptics Corp | 適用於投影系統之發光二極體 |
TWI622189B (zh) * | 2013-02-08 | 2018-04-21 | 晶元光電股份有限公司 | 發光二極體元件 |
ITVI20130077A1 (it) * | 2013-03-20 | 2014-09-21 | St Microelectronics Srl | Un materiale riempitivo a base di grafene con una elevata conducibilita' termica per il collegamento di chips in dispositivi a microstruttura |
TWI559053B (zh) * | 2013-05-28 | 2016-11-21 | 潘宇翔 | 適用於直下式背光模組之光源裝置及其顯示器 |
DE102016100320A1 (de) | 2016-01-11 | 2017-07-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Bauelements |
TWI581455B (zh) | 2016-01-29 | 2017-05-01 | 友達光電股份有限公司 | 發光裝置及發光裝置之製造方法 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9312462B2 (en) | 2010-04-30 | 2016-04-12 | Rohm Co., Ltd. | LED module |
JP2011243713A (ja) * | 2010-05-18 | 2011-12-01 | Citizen Electronics Co Ltd | 発光装置 |
JP2013016576A (ja) * | 2011-07-01 | 2013-01-24 | Fuji Mach Mfg Co Ltd | 半導体パッケージ |
JP2015530750A (ja) * | 2012-09-24 | 2015-10-15 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 |
US9722159B2 (en) | 2012-09-24 | 2017-08-01 | Osram Opto Semiconductors Gmbh | Optoelectronic component with a pre-oriented molecule configuration and method for producing an optoelectronic component with a pre-oriented molecule configuration |
JP2014140072A (ja) * | 2014-04-16 | 2014-07-31 | Rohm Co Ltd | 発光素子モジュール |
JP2016143847A (ja) * | 2015-02-05 | 2016-08-08 | 日亜化学工業株式会社 | 発光装置 |
JP2017028097A (ja) * | 2015-07-22 | 2017-02-02 | シャープ株式会社 | 発光装置および照明装置 |
JP2017143305A (ja) * | 2017-05-10 | 2017-08-17 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
WO2019117452A1 (ko) * | 2017-12-12 | 2019-06-20 | 삼성에스디아이 주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 장치 |
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JP5219445B2 (ja) | 2013-06-26 |
US20090026484A1 (en) | 2009-01-29 |
TWI442595B (zh) | 2014-06-21 |
US7872277B2 (en) | 2011-01-18 |
TW200905913A (en) | 2009-02-01 |
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