JP6587499B2 - 発光装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
上記の発光装置では、1組の電極にはコネクタが接続され、光学素子は、コネクタと封止樹脂との間にある基板上の平坦な環状領域に載置されていることが好ましい。
上記の発光装置では、封止樹脂は、複数種類の蛍光体を含有し、蛍光体が種類ごとに層状に沈降した状態で硬化していることが好ましい。
上記の発光装置は、基板の平坦な領域の上に下端を接触させて封止樹脂を覆うように載置され、発光素子から出射された光を集光する光学素子をさらに有することが好ましい。
上記の発光装置では、発光素子は、複数のLED素子であり、封止樹脂により覆われる基板の上面の領域における複数のLED素子が占める面積の割合が30%〜50%であることが好ましい。
10 実装基板
20 回路基板
30 LED素子
40 反射枠
50 封止樹脂
51 第1の層
52 第2の層
53 第3の層
61 緑色蛍光体
62 赤色蛍光体
70 レンズ
Claims (8)
- 複数の発光素子と、
前記複数の発光素子が実装領域内に実装され、前記複数の発光素子に電力を供給するための配線パターンが形成され、前記配線パターンのうちで外部電源に接続される部分である1組の電極が前記実装領域の周囲に配置された基板と、
前記複数の発光素子からの出射光により励起される蛍光体を含有し、前記実装領域上で前記複数の発光素子を封止する封止樹脂と、
前記基板の裏面側に配置された放熱用のヒートシンクと、
前記1組の電極を前記外部電源に接続するためのコネクタであって、下側カバーおよび中央に円形の開口部を有する上側カバーで構成され、前記開口部内に前記封止樹脂が配置されるように前記上側カバーと前記下側カバーとの間に前記基板を挟んで前記ヒートシンクの上に固定されるコネクタと、
環状底面および前記環状底面の中心に形成された下側凹部を有し、前記開口部内における前記上側カバーと前記封止樹脂との間にある前記基板上の平坦な環状領域に前記環状底面を接触させて前記下側凹部内に前記封止樹脂を収容するように載置され、前記複数の発光素子から前記封止樹脂を通して出射した光を前記複数の発光素子の実装面に対して垂直な方向に集光する光学素子と、
を有することを特徴とする発光装置。 - 前記光学素子は、前記複数の発光素子から前記封止樹脂を通して側方に出射した光を上方に全反射させる傾斜した側面を有する、請求項1に記載の発光装置。
- 前記コネクタは、前記上側カバーの上からねじ止めされることで、前記基板とともに前記ヒートシンクに固定されている、請求項1または2に記載の発光装置。
- 前記封止樹脂は、複数種類の蛍光体を含有し、前記蛍光体が種類ごとに層状に沈降した状態で硬化している、請求項1〜3のいずれか一項に記載の発光装置。
- 前記封止樹脂は、
前記複数種類の蛍光体として緑色蛍光体と赤色蛍光体を含有し、
前記緑色蛍光体を主に含む第1の層、前記赤色蛍光体を主に含む第2の層、ならびに前記第1の層および前記第2の層より前記緑色蛍光体および前記赤色蛍光体の濃度が低い第3の層を前記基板に近い側から順に有する、請求項4に記載の発光装置。 - 前記複数の発光素子は、複数のLED素子であり、
前記封止樹脂により覆われる前記実装領域における前記複数のLED素子が占める面積の割合が30%〜50%である、請求項1〜5のいずれか一項に記載の発光装置。 - 基板上の実装領域内に複数の発光素子を実装する工程と、
前記複数の発光素子に電力を供給するための配線パターンを、前記配線パターンのうちで外部電源に接続される部分である1組の電極が前記実装領域の周囲に配置されるように前記基板上に形成する工程と、
前記複数の発光素子からの出射光により励起される蛍光体を含有する封止樹脂により、前記実装領域上で前記複数の発光素子を封止する工程と、
下側カバーおよび中央に円形の開口部を有する上側カバーで構成され、前記1組の電極を前記外部電源に接続するためのコネクタを、前記開口部内に前記封止樹脂が配置されるように前記上側カバーと前記下側カバーとの間に前記基板を挟んで放熱用のヒートシンクの上に固定する工程と、
環状底面および前記環状底面の中心に形成された下側凹部を有し前記複数の発光素子から前記封止樹脂を通して出射した光を前記複数の発光素子の実装面に対して垂直な方向に集光する光学素子を、前記開口部内における前記上側カバーと前記封止樹脂との間にある前記基板上の平坦な環状領域に前記環状底面を接触させて前記下側凹部内に前記封止樹脂を収容するように載置する工程と、
を有することを特徴とする発光装置の製造方法。 - 前記封止する工程では、複数種類の蛍光体を含有する封止樹脂を前記実装領域上に注入し、前記蛍光体を種類ごとに層状に沈降させた後で、前記封止樹脂を硬化させる、請求項7に記載の製造方法。
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EP3092665B1 (en) | 2014-01-08 | 2019-03-27 | Lumileds Holding B.V. | Wavelength converted semiconductor light emitting device |
JP6472728B2 (ja) | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
US9985182B2 (en) * | 2015-12-25 | 2018-05-29 | Citizen Electronics Co., Ltd. | Light-emitting apparatus and color-matching apparatus |
US11004891B2 (en) * | 2016-02-09 | 2021-05-11 | Nichia Corporation | Light emitting device and backlight including the light emitting device |
JP6618503B2 (ja) * | 2017-04-12 | 2019-12-11 | 株式会社東海理化電機製作所 | 車両用照射装置 |
US10690312B2 (en) * | 2017-05-18 | 2020-06-23 | Tri Lite, Inc. | Light emitting diode signal light |
JP7092474B2 (ja) * | 2017-08-21 | 2022-06-28 | シチズン電子株式会社 | 発光装置 |
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JP2002076445A (ja) | 2000-09-01 | 2002-03-15 | Sanken Electric Co Ltd | 半導体発光装置 |
JP4147755B2 (ja) | 2001-07-31 | 2008-09-10 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
JP2003234511A (ja) | 2002-02-06 | 2003-08-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP4292794B2 (ja) | 2002-12-04 | 2009-07-08 | 日亜化学工業株式会社 | 発光装置、発光装置の製造方法および発光装置の色度調整方法 |
JP3858829B2 (ja) | 2003-02-06 | 2006-12-20 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
JP2005167079A (ja) | 2003-12-04 | 2005-06-23 | Toyoda Gosei Co Ltd | 発光装置 |
JP2007049114A (ja) * | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
JP2009289829A (ja) | 2008-05-27 | 2009-12-10 | Citizen Electronics Co Ltd | 発光装置 |
JP2012044034A (ja) * | 2010-08-20 | 2012-03-01 | Stanley Electric Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
JP2012044048A (ja) | 2010-08-20 | 2012-03-01 | Sharp Corp | 発光素子パッケージの製造方法及び発光素子パッケージ |
JP5675248B2 (ja) | 2010-09-29 | 2015-02-25 | スタンレー電気株式会社 | 光源装置および照明装置 |
JP5864851B2 (ja) * | 2010-12-09 | 2016-02-17 | シャープ株式会社 | 発光装置 |
KR20120128962A (ko) * | 2011-05-18 | 2012-11-28 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
EP2715815B1 (en) | 2011-06-01 | 2020-02-05 | Signify Holding B.V. | A light emitting module comprising a thermal conductor, a lamp and a luminaire |
JP2013051369A (ja) | 2011-08-31 | 2013-03-14 | Sharp Corp | 発光装置 |
KR20130107536A (ko) * | 2012-03-22 | 2013-10-02 | 삼성전자주식회사 | Led패키지 및 그 제조방법 |
JP2014041993A (ja) | 2012-07-24 | 2014-03-06 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
JP2014115506A (ja) * | 2012-12-11 | 2014-06-26 | Mitsubishi Electric Corp | レンズ体及び光源ユニット |
JP2014192252A (ja) * | 2013-03-26 | 2014-10-06 | Toyoda Gosei Co Ltd | Led発光装置 |
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