JP7092474B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7092474B2 JP7092474B2 JP2017158694A JP2017158694A JP7092474B2 JP 7092474 B2 JP7092474 B2 JP 7092474B2 JP 2017158694 A JP2017158694 A JP 2017158694A JP 2017158694 A JP2017158694 A JP 2017158694A JP 7092474 B2 JP7092474 B2 JP 7092474B2
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- phosphor
- light
- light emitting
- particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
10 実装基板
20 LED素子
30 封止樹脂
31 分散層
32 沈降層
51,52 蛍光体の粒子
55 ナノフィラーの粒子
Claims (4)
- 実装基板と、
前記実装基板上に実装されたLED素子と、
前記LED素子からの出射光により励起される第1および第2の蛍光体、および平均粒径が1nm~100nmの範囲内であるナノフィラーを含有し、前記実装基板上に充填されて前記LED素子を封止する透光性の封止樹脂と、を有し、
前記第1の蛍光体の粒子の比重は前記第2の蛍光体の粒子の比重よりも小さく、
前記封止樹脂は、前記LED素子の側方および斜め上方を覆う前記第1の蛍光体の粒子の分散層、ならびに前記実装基板および前記LED素子の上面上に形成された前記第2の蛍光体の粒子の沈降層を有し、
前記封止樹脂の材質はシリコーン樹脂であり、前記ナノフィラーの材質は二酸化ケイ素であり、
前記第1の蛍光体の比重は2~4g/cm 3 であり、前記第2の蛍光体の比重は5~7g/cm 3 であり、
前記封止樹脂への前記ナノフィラーの添加量は、0.5~1.0wt%であり、
前記分散層では、前記ナノフィラーの粒子が形成する凝集体の間に前記第1の蛍光体の粒子が分散している、
ことを特徴とする発光装置。 - 前記第1の蛍光体の粒子の粒度分布の中央値は、前記第2の蛍光体の粒子の粒度分布の中央値よりも小さい、請求項1に記載の発光装置。
- 前記LED素子は前記出射光として青色光を生成し、
前記第1の蛍光体は前記出射光により励起されて赤色光を生成し、
前記第2の蛍光体は前記出射光により励起されて緑色光を生成する、請求項1に記載の発光装置。 - 前記LED素子は前記出射光として青色光を生成し、
前記第1の蛍光体は前記出射光により励起されて赤色光を生成し、
前記第2の蛍光体は前記出射光により励起されて黄色光を生成する、請求項1に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017158694A JP7092474B2 (ja) | 2017-08-21 | 2017-08-21 | 発光装置 |
US16/107,926 US10629785B2 (en) | 2017-08-21 | 2018-08-21 | Light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017158694A JP7092474B2 (ja) | 2017-08-21 | 2017-08-21 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019036676A JP2019036676A (ja) | 2019-03-07 |
JP7092474B2 true JP7092474B2 (ja) | 2022-06-28 |
Family
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JP2017158694A Active JP7092474B2 (ja) | 2017-08-21 | 2017-08-21 | 発光装置 |
Country Status (2)
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US (1) | US10629785B2 (ja) |
JP (1) | JP7092474B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020244512A1 (zh) * | 2019-06-05 | 2020-12-10 | 苏州欧普照明有限公司 | 一种光源模组及包括该光源模组的照明装置 |
JP7277760B2 (ja) * | 2019-08-19 | 2023-05-19 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
Citations (9)
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WO2002059982A1 (en) | 2001-01-24 | 2002-08-01 | Nichia Corporation | Light emitting diode, optical semiconductor elemet and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
JP2008260930A (ja) | 2007-03-20 | 2008-10-30 | Mitsubishi Chemicals Corp | 蛍光体含有組成物、発光装置、照明装置、および画像表示装置 |
JP2014005334A (ja) | 2012-06-22 | 2014-01-16 | Shin Etsu Chem Co Ltd | 硬化性樹脂組成物、その硬化物及びそれを用いた光半導体デバイス |
JP2014216329A (ja) | 2013-04-22 | 2014-11-17 | E&E Japan株式会社 | チップledの製造方法 |
JP2015015371A (ja) | 2013-07-05 | 2015-01-22 | 日亜化学工業株式会社 | 発光装置 |
CN104347783A (zh) | 2013-07-31 | 2015-02-11 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
JP2015230903A (ja) | 2014-06-03 | 2015-12-21 | 株式会社東芝 | 発光装置 |
JP2016086168A (ja) | 2014-10-24 | 2016-05-19 | シチズン電子株式会社 | 発光装置およびその製造方法 |
US20170186921A1 (en) | 2015-12-23 | 2017-06-29 | Samsung Electronics Co., Ltd. | Light emitting diode package |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4451178B2 (ja) | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | 発光デバイス |
JP2007049114A (ja) * | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
EP2567257B1 (en) * | 2010-05-06 | 2021-03-24 | Immunolight, Llc. | Adhesive bonding composition and method of use |
KR101832536B1 (ko) | 2010-08-31 | 2018-02-26 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치와 그 제조 방법 |
JP5870611B2 (ja) | 2010-11-05 | 2016-03-01 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2013062320A (ja) * | 2011-09-12 | 2013-04-04 | Olympus Corp | 発光装置 |
JP2015046579A (ja) | 2013-07-29 | 2015-03-12 | 旭硝子株式会社 | 光変換部材の製造方法、光変換部材、照明光源および液晶表示装置 |
US9559274B2 (en) | 2014-10-17 | 2017-01-31 | Nichia Corporation | Light emitting device and resin composition |
JP6234950B2 (ja) | 2014-10-17 | 2017-11-22 | 日亜化学工業株式会社 | 発光装置及び樹脂組成物 |
US9698315B2 (en) * | 2014-10-31 | 2017-07-04 | Nichia Corporation | Light emitting device |
JP6354626B2 (ja) * | 2015-03-09 | 2018-07-11 | 豊田合成株式会社 | 発光装置の製造方法 |
US20170084502A1 (en) * | 2015-09-15 | 2017-03-23 | Seoul Semiconductor Co., Ltd. | Light emitting device, color coordinate measuring apparatus and color coordinate correction method thereof |
-
2017
- 2017-08-21 JP JP2017158694A patent/JP7092474B2/ja active Active
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2018
- 2018-08-21 US US16/107,926 patent/US10629785B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002059982A1 (en) | 2001-01-24 | 2002-08-01 | Nichia Corporation | Light emitting diode, optical semiconductor elemet and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
JP2008260930A (ja) | 2007-03-20 | 2008-10-30 | Mitsubishi Chemicals Corp | 蛍光体含有組成物、発光装置、照明装置、および画像表示装置 |
JP2014005334A (ja) | 2012-06-22 | 2014-01-16 | Shin Etsu Chem Co Ltd | 硬化性樹脂組成物、その硬化物及びそれを用いた光半導体デバイス |
JP2014216329A (ja) | 2013-04-22 | 2014-11-17 | E&E Japan株式会社 | チップledの製造方法 |
JP2015015371A (ja) | 2013-07-05 | 2015-01-22 | 日亜化学工業株式会社 | 発光装置 |
CN104347783A (zh) | 2013-07-31 | 2015-02-11 | 晶元光电股份有限公司 | 发光元件及其制作方法 |
JP2015230903A (ja) | 2014-06-03 | 2015-12-21 | 株式会社東芝 | 発光装置 |
JP2016086168A (ja) | 2014-10-24 | 2016-05-19 | シチズン電子株式会社 | 発光装置およびその製造方法 |
US20170186921A1 (en) | 2015-12-23 | 2017-06-29 | Samsung Electronics Co., Ltd. | Light emitting diode package |
Also Published As
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US20190058092A1 (en) | 2019-02-21 |
US10629785B2 (en) | 2020-04-21 |
JP2019036676A (ja) | 2019-03-07 |
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