CN103858243A - 将衬底接合到半导体发光器件的方法 - Google Patents

将衬底接合到半导体发光器件的方法 Download PDF

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Publication number
CN103858243A
CN103858243A CN201280042515.7A CN201280042515A CN103858243A CN 103858243 A CN103858243 A CN 103858243A CN 201280042515 A CN201280042515 A CN 201280042515A CN 103858243 A CN103858243 A CN 103858243A
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China
Prior art keywords
wafer
light emitting
semiconductor structure
substrate
flexible membrane
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CN201280042515.7A
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Inventor
G.巴辛
J.E.伊普勒
P.S.马丁
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Priority to CN201810161389.6A priority Critical patent/CN108269756A/zh
Priority to CN201710012849.4A priority patent/CN107086198B/zh
Publication of CN103858243A publication Critical patent/CN103858243A/zh
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Abstract

根据本发明实施例的方法包括在半导体发光器件的晶片上方定位柔性膜（48），每个半导体发光器件包括半导体结构（13），所述半导体结构包括夹在n型区和p型区之间的发光层。经由柔性膜（48）将半导体发光器件的晶片接合到衬底（50）。在接合之后，柔性膜（48）与半导体结构（13）直接接触。该方法还包括将所述晶片接合到所述衬底（50）之后，划分所述晶片。

Description

将衬底接合到半导体发光器件的方法
技术领域
本发明涉及将半导体发光器件的晶片接合到衬底。
背景技术
包括发光二极管（LED）、谐振腔发光二极管（RCLED）、诸如面发射激光器的垂直腔激光二极管（VCSEL）和边发射激光器的半导体发光器件是目前可获得的最有效率的光源之一。在能够在整个可见光谱中操作的高亮度发光器件的制造中目前感兴趣的材料系统包括III-V族半导体，尤其是镓、铝、铟和氮的二元、三元和四元合金，其也被称为III族氮化物材料。通常，III 族氮化物发光器件是通过金属有机物化学气相沉积（MOCVD）、分子束外延（MBE）或者其他外延技术在蓝宝石、碳化硅、III族氮化物或者其他合适的衬底上外延生长具有不同组成成分和掺杂浓度的半导体层的叠层来制造的。该叠层通常包括形成于衬底上的掺杂例如Si的一个或多个n型层、形成于一个或多个n型层上位于有源区中的一个或多个发光层以及形成于有源区上的掺杂例如Mg的一个或多个p型层。电接触形成于n和p型区域上。
图6示出了接合到透明透镜2的LED管芯4，US 7,053,419中对其进行了更具体的描述。LED管芯4包括n型导电性的第一半导体层80和p型导电性的第二半导体层100。半导体层80和100被电耦合到有源区120。在倒装芯片配置中n接触140和p接触160被设置在LED管芯4的同一侧。透明衬顶（superstrate）340是由诸如例如蓝宝石、SiC、GaN或GaP的材料形成的。透镜2通过接合层6接合到透明衬顶340。接合层6可以是硅树脂。接合层6可以包括将有源区120发射的波长的光转换成其他波长的发光材料。该发光材料可以是常规磷光体颗粒。
发明内容
本发明的目的是提供一种通过柔性膜将半导体发光器件的晶片接合到衬底的方法。
根据本发明实施例的方法包括在半导体发光器件的晶片上方定位柔性膜，每个半导体发光器件包括半导体结构，所述半导体结构包括夹在n型区域和p型区域之间的发光层。经由柔性膜将半导体发光器件的晶片接合到衬底。在接合之后，柔性膜与半导体结构直接接触。该方法还包括将所述晶片接合到所述衬底之后，划分所述晶片。
附图说明
图1示出了包括生长于生长衬底上的半导体结构、金属n和p接触以及接合焊盘的半导体发光器件。
图2示出了接合到处置部(handle)的半导体发光器件的晶片。
图3示出了去除生长衬底并将半导体结构顶表面纹理化之后图2的结构。
图4示出了接合到第二衬底之后图3的结构。
图5示出了去除处置部并且划分晶片之后图4的结构。
图6示出了接合到透明透镜的现有技术LED管芯。
具体实施方式
在图6中示出的器件中，在将LED芯片4从LED芯片晶片单一化之后，将透镜2附着到LED芯片4。
在本发明的实施例中，通过预先形成的硅树脂层压膜将包括设置于n型区和p型区之间的发光区的半导体发光器件的晶片接合到衬底。正如本文中使用的，“晶片”指的是其在被分成更小的结构之前的结构，例如上面已经生长有许多发光器件的半导体材料的生长衬底。尽管在下文的范例中半导体发光器件是发射蓝光或者UV光的III族氮化物LED，但是也可以使用除LED之外的半导体发光器件（比如激光二极管）以及由诸如其他III-V族材料、III族磷化物、III族砷化物、II-VI族材料、ZnO或者硅基材料的其他材料系统制作的半导体发光器件。
图1示出了半导体发光器件。为了形成图1中示出的器件，在生长衬底11上生长半导体结构13。衬底11可以是任意合适的衬底，诸如例如蓝宝石、SiC、Si、GaN或者复合衬底。该半导体结构13包括夹在n型和p型区12和16之间的发光区或者有源区14。n型区12可以首先生长并且可以包括具有不同的组成成分和掺杂浓度的多个层，例如包括诸如缓冲层或者成核层的准备层，和/或被设计成有助于移除生长衬底的层（其可以是n型或者是未被有意掺杂的）以及为了使发光区有效地发光所希望的特定光学、材料或者电气属性设计的n型或者甚至p型器件层。光发射区或者有源区14生长在n型区12上。合适的光发射区的范例包括单个厚的或薄的发光层，或者多量子阱光发射区，其包括由势垒层分开的多个薄的或者厚的发光层。然后可以在光发射区14上生长p型区16。与n型区12类似，p型区16可以包括具有不同组成成分、厚度和掺杂浓度的多个层，其包括未被有意掺杂的层或者n型层。该器件中所有半导体材料的总厚度在一些实施例中小于10 µm ，在一些实施例中小于6 µm 。在一些实施例中，在半导体材料生长之后可以可选地在200℃和800℃之间对其进行退火。
p接触33形成于p型区16上。p接触33可以是多层金属接触。可以通过，例如，蒸镀或者溅射沉积与p型区16直接接触的第一金属层，然后通过包括例如蚀刻或者剥离的标准光刻操作对其构图。第一金属层可以是与p型III族氮化物材料进行欧姆接触的反射金属，例如，诸如银。第一金属层还可以是过渡金属和银的多层叠层。过渡金属可以是，例如，镍。第一金属层在一些实施例中厚度是100 Å和2000 Å之间，在一些实施例中厚度是500 Å和1700 Å之间，而在一些实施例中厚度是1000 Å和1600 Å之间。在沉积第一金属层之后可以可选地对该结构退火。可选的第二金属层可以例如通过蒸镀或者溅射沉积在第一金属层上，然后通过诸如例如蚀刻或者剥离的标准光刻操作对其构图。第二金属层可以是与银反应最小的任意导电材料，诸如例如钛钨合金。可以部分、全部或者一点也不将这种合金氮化。替代地，第二金属层可以是铬、铂或硅，或者可以是为粘附到周围层以及为阻挡第一金属层扩散而优化的任意上述材料的多层叠层。第二金属层在一些实施例中厚度是1000Å和10000 Å之间，在一些实施例中厚度是2000 Å和8000 Å之间，而在一些实施例中厚度是2000 Å和7000 Å之间。
然后通过标准光刻操作对该结构构图，并且通过例如，反应离子蚀刻（RIE）（其中化学意义上的反应等离子体被用于去除半导体材料）或者电感耦合等离子体（ICP）蚀刻（一种RIE过程，其中通过RF动力电磁场产生等离子体）将其蚀刻。在一些实施例中，图案由用于对p接触金属层中的一个或多个进行构图的光刻掩模确定。在这些实施例中，在单次操作中，可以在p接触金属蚀刻之后进行蚀刻。在一个或多个区域中，去除了整个厚度的p型区16和整个厚度的发光区14，显露出n型区12的表面（图1中示出了三个这种区域）。
金属n接触36形成于通过蚀刻掉p型区和发光区而暴露出的n型区12的一个部分或多个部分上。n接触36可以是任意合适的金属，包括铝或者多层金属叠层，其包括铝、钛钨合金、铜和金。在n接触36是多层叠层的实施例中，可以选择第一金属（即与n型区12相邻的金属）从而与GaN形成欧姆接触，并且反射蓝光和白光。这种第一层可以是，例如，铝。可以通过任意合适的工艺沉积n接触36，其包括，例如溅射、蒸镀、电镀或者这些工艺的组合。
可以例如通过等离子体增强化学气相沉积（PECVD）、化学气相沉积（CVD）或者蒸镀将电介质38沉积在该结构上。电介质38电隔离n接触36和p接触33。 通过标准光刻操作对电介质38构图，并且通过ICP蚀刻或者RIE将其蚀刻，以暴露出n接触36和p接触33。电介质38可以是任意合适的电介质，包括氮化硅、氧化硅和氮氧化硅。在一些实施例中，电介质38是反射叠层。电介质38可以在n接触36之前或之后形成。
接合焊盘40a和40b形成于n和p接触以及电介质38上，其用于将n和p接触重新分配到适于接合到诸如例如PC板的另一个结构的大的导电焊盘。接合焊盘通常是金属的，但是也可以是任意合适的导电材料。接合焊盘40a通过p接触33电连接到p型区16。接合焊盘40b通过n接触36电连接到n型区12。接合焊盘40可以是，例如，Cu或者例如包括Ti、TiW、Cu、Ni和Au的多层金属叠层，其通过溅射或者溅射和电镀的组合而沉积。 接合焊盘40a和40b可以被如图1中所示的间隙或者被诸如上文参考电介质38所述的材料的固体电介质电隔离。
许多个图1中示出的器件同时形成于单个晶片上。图1中示出的发光器件的具体结构与本发明的实施例不相关——可以使用任意合适的发光器件结构。
在图2中，诸如例如图1中示出的器件的器件晶片附着到处置部44。半导体结构13通过金属层31和接合层42附着到处置部44。图2、3、4和5中的金属层31包括上述的和图1中详细示出的n和p接触36和33、电介质38以及接合焊盘40。在去除生长衬底11期间，处置部44机械地支撑着半导体结构13。处置部44可以是，例如，玻璃、蓝宝石、硅或者任意其他合适的材料。接合层可以仅形成于处置部44上，仅形成于半导体结构13上或者形成于处置部44和半导体结构13二者之上。 一个或多个接合层可以是任意合适的材料，诸如，例如，由任意合适的技术（诸如例如旋涂）形成的诸如硅树脂的有机材料。在形成一个或多个接合层后，处置部44和半导体结构13在高温下被按压在一起。因为之后处置部44被去除并且因此其不包含必须与晶片上各个发光器件对准的特征，所以处置部44和半导体结构13之间的接合不需要任何对准。
在图3中，通过包括例如激光剥离、蚀刻或者机械技术的任意适合生长衬底材料的技术将生长衬底11从半导体器件的晶片上去除。可以将通过去除生长衬底11而暴露出的半导体结构13的表面46（与图1中生长衬底11的界面处的n型区12的表面）可选地变薄，然后可选地将其纹理化（例如通过粗糙化或者通过形成图案），以提高来自半导体结构13的光提取。可以通过标准光刻和蚀刻对表面46构图，并且可以通过包括例如蚀刻（诸如KOH溶液中的光电化学蚀刻）、机械研磨或者烧蚀的任意合适的技术将其粗糙化。
在图4中，接合层48形成于半导体结构13的纹理化的表面46上。在一些实施例中，接合层48是柔性膜，其可以是全部或者部分固化的透明材料，比如硅树脂。接合膜48可以与半导体结构13和衬底50分开形成，这样允许在附着到半导体结构13之前，对该膜的厚度以及该膜特征的测试和验证进行严格控制。在一些实施例中，可以将诸如金刚石的散热材料添加到接合膜48中。在一些实施例中，可以将诸如金刚石、硅石、TiO2 和/或其他无机添加剂的材料添加到接合膜48中，从而如下文所述那样，调整膜的折射率，改善光传输，造成光散射和/或改善沉积在膜中的波长转换材料的转换。
在一些实施例中，例如通过将硅树脂的混合物散布在支撑膜上，然后全部或部分固化硅树脂，使接合膜48形成于诸如乙烯-四氟乙烯共聚物膜的支撑膜上。完成的薄膜是固体。在一些实施例中，在形成接合膜48后，在接合膜48上形成保护膜，从而使接合膜48 夹在支撑膜和保护膜之间。在与接合膜48进行第一次接合（例如接合到半导体结构13）之前将支撑膜和保护膜之一去除，然后在与接合膜48进行第二次接合（例如接合到衬底50）之前去除支撑膜和保护膜中的另一个。
如下将接合膜48附着到半导体结构13或者衬底50。将支撑膜和保护膜之一去除后，对接合膜48预固化。为了达到阻止硅树脂在接合期间熔化，并且在半导体结构13或衬底50上可以维持目标接合膜厚度的膜硬度，将接合膜48在100和150℃之间预固化1-10分钟。在预固化接合膜48之后，在第一接合步骤中将其附着到半导体结构13。将包括接合膜48和半导体结构13的结构载入真空层压机中，以利用真空、高温和高压中的一种或多种将接合膜48附着到半导体结构13的表面46。温度和压力是平衡的，以便接合膜48为下文所述的第二接合步骤维持粘合强度。例如，在一些实施例中，在60和100℃之间的温度下，在一些实施例中，在0.1和0.3 MPa 之间的压力下，在一些实施例中，在大约为10-3 Torr的真空下，接合膜48可以接合到半导体结构13。
然后经由接合层48将半导体结构13接合到衬底50。衬底50可以是诸如玻璃的透明、高折射率材料，其在接合到半导体结构13之前预先形成于衬底晶片中。上文玻璃的折射率的范围可以是1.5至2.2，或者在一些实施例中更高，与GaN的折射率（2.4）紧密匹配。用于衬底50的合适材料包括合适的高折射率玻璃，诸如氯化铅、溴化铅、氟化钾、氟化锌、铝、锑、铋、硼、铅、锂、磷、钾、硅、钠、碲、铊、钨或锌的氧化物，或者其任意混合物。例如，高折射率玻璃还包括诸如Schott玻璃LaSFN35、LaF10、NZK7、NLAF21、LaSFN18、SF59或 LaSF3或者Ohara玻璃SLAH51或SLAM60或者其混合物的材料，诸如(Ge、As、Sb、Ga)(S、Se、Te、F、Cl、I、Br)硫属化物和硫属元素卤化物玻璃的玻璃。在一些实施例中，衬底50可以包括诸如玻璃、氟化镁和聚合物的较低折射率材料或者由诸如玻璃、氟化镁和聚合物的较低折射率材料形成。
在将接合膜48接合到半导体结构13后，从接合膜48去除支撑膜和保护膜中的另一个，并且将衬底50定位在接合膜48的顶部。在一些实施例中，然后将该结构放在第二真空层压机中，第二真空层压机在高于第一接合步骤中使用的温度和压力下将衬底50接合到接合膜48。例如，在一些实施例中，衬底50可以在110和120℃之间的温度下接合到接合膜48 。尽管在上文的范例中，在第一接合步骤中将接合膜48附着到半导体结构13，在第二接合步骤中将其附着到衬底50，但是在一些实施例中，在第一接合步骤中将接合膜48附着到衬底50，然后在第二接合步骤中将其附着到半导体结构13。
在一些实施例中，在接合膜48、衬底50或者这二者中包括将由发光区发出的波长的光转换成其他波长的一种或多种发光材料。可以由波长转换材料转换由发光区发出的以及入射到波长转换材料上的所有的光或者仅一部分光。由发光区发出的未经转换的光可以是最终的光的光谱的一部分，尽管其不必一定这样。常见组合的范例包括与发出黄光的波长转换材料组合的发出蓝光的LED、与发出绿光和红光的波长转换材料组合的发出蓝光的LED、与发出蓝光和黄光的波长转换材料组合的发出UV的LED、与发出蓝光、绿光和红光的波长转换材料组合的发出UV的LED。可以增加发出其他颜色的光的波长转换材料以调节从该器件发出的光的光谱。波长转换材料可以是常规磷光体颗粒、有机半导体、II-VI或III-V族 半导体、II-VI或III-V族半导体量子点或纳米晶体、染料、聚合物或者发冷光的诸如GaN 的材料。如果衬底50和接合层48之一或二者都包括常规磷光体颗粒，那么在一些实施例中，包括磷光体的该结构对于容纳通常具有大约5微米至大约50微米尺寸的颗粒来说足够厚。可以使用任意合适的磷光体，包括诸如Y3Al5O12:Ce (YAG)、Lu3Al5O12:Ce (LuAG)、Y3Al5-xGaxO12:Ce (YAlGaG)、(Ba1-xSrx)SiO3:Eu (BOSE)的基于石榴石的磷光体以及诸如(Ca,Sr)AlSiN3:Eu和(Ca,Sr,Ba)2Si5N8:Eu的基于氮化镓的磷光体。可以将不同的波长转换材料混合在一起或者形成为分立的层。在制造这些结构期间，可以将波长转换材料并入接合膜48和/或衬底50。例如，在将硅树脂混合物散布在支撑膜上以形成接合膜48之前，可以将波长转换材料与硅树脂混合。
如图5所示，在接合到衬底50之后，例如通过蚀刻、机械分离、激光剥离或者任何其他合适的技术去除处置部44。例如通过蚀刻或者其他合适的技术去除在去除处置部44之后残留的任何接合材料42。然后可以将晶片分成各个器件或者多组器件。图5中示出了从晶片分离的三个结构之间的边界52。因为半导体结构13和衬底50是在一起被划开的，所以如图5所示，衬底不比发光器件更宽。可以通过例如常规锯切、通过利用193nm、248 nm或355 nm光的激光烧蚀或者通过水射流切割进行晶片分割，将其分成各个器件或者多组器件。还可以经由划片和机械断裂的组合进行分割，例如可以通过常规锯切、通过利用193nm、248 nm或355 nm光的激光烧蚀或者通过水射流切割进行划片。
已经详细描述了本发明，本领域的技术人员将认识到，在给出本公开内容的前提下，可以对本发明做出修改而不脱离本文所述发明构思的精神。因此，并非要将本发明的范围限于所示和所述的具体实施例。

Claims (11)

1.一种方法，包括：
在半导体发光器件的晶片上方定位柔性膜，每个半导体发光器件包括半导体结构，所述半导体结构包括夹在n型区和p型区之间的发光层；
经由所述柔性膜将衬底接合到所述半导体发光器件的晶片，其中在接合之后，所述柔性膜与所述半导体结构直接接触；以及
将所述晶片接合到所述衬底之后，划分所述晶片。
2.根据权利要求1所述的方法，其中：
每个半导体结构还包括设置于所述n型区上的第一金属接触和设置于所述p型区上的第二金属接触，其中所述第一和第二金属接触都形成于所述半导体结构的第一表面上；
所述柔性膜与所述半导体结构的与所述第一表面相反的第二表面直接接触。
3.根据权利要求1所述的方法，其中所述柔性膜包括波长转换材料。
4.根据权利要求1所述的方法，其中所述柔性膜包括硅树脂。
5.根据权利要求1所述的方法，其中所述柔性膜是透明的。
6.根据权利要求1所述的方法，其中接合包括：
将所述柔性膜接合到所述半导体结构；以及
将所述柔性膜接合到所述半导体结构之后，将所述柔性膜接合到所述衬底。
7.根据权利要求1所述的方法，其中所述衬底为玻璃。
8.根据权利要求1所述的方法，其中所述晶片中每个半导体发光器件的半导体结构生长于单一生长衬底上，所述方法还包括：
将半导体发光器件的晶片接合到处置部；以及
将半导体发光器件的晶片接合到处置部之后，去除所述生长衬底。
9.根据权利要求8所述的方法，还包括对通过去除所述生长衬底而暴露的半导体结构的表面进行纹理化。
10.根据权利要求9所述的方法，其中所述柔性膜被定位于所述纹理化的表面上方。
11.根据权利要求8所述的方法，还包括在经由所述柔性膜将衬底接合到半导体发光器件的晶片之后，去除所述处置部。
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