KR20010087348A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR20010087348A KR20010087348A KR1020010011461A KR20010011461A KR20010087348A KR 20010087348 A KR20010087348 A KR 20010087348A KR 1020010011461 A KR1020010011461 A KR 1020010011461A KR 20010011461 A KR20010011461 A KR 20010011461A KR 20010087348 A KR20010087348 A KR 20010087348A
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- Prior art keywords
- film
- amorphous semiconductor
- semiconductor film
- drain region
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 130
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims abstract description 70
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims description 314
- 239000012535 impurity Substances 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 19
- 239000012789 electroconductive film Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 20
- 238000000206 photolithography Methods 0.000 abstract description 14
- 238000003860 storage Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 description 28
- 239000011159 matrix material Substances 0.000 description 22
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- 230000003068 static effect Effects 0.000 description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
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- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
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- 238000001312 dry etching Methods 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
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- 239000000203 mixture Substances 0.000 description 3
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- 239000000243 solution Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 nitrate compound Chemical class 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (26)
- 게이트 배선, 소스 배선, 및 픽셀 전극을 갖는 반도체 장치에 있어서,절연 표면 위에 형성되는 상기 게이트 배선과,상기 게이트 배선 위에 형성되는 절연 막과,상기 절연 막 위에 형성되는 비정질 반도체 막과,상기 비정질 반도체 막 위에 형성되는 소스 영역 및 드레인 영역과,상기 소스 영역 또는 상기 드레인 영역 위에 형성되는 상기 소스 배선 또는 전극과,상기 전극 위에 형성되는 상기 픽셀 전극을 포함하며,상기 드레인 영역 또는 상기 소스 영역의 한 단면은 상기 비정질 반도체 막의 단면 및 상기 전극의 단부와 함께 레지스터 내에 실질적으로 놓이는 것을 특징으로 하는, 반도체 장치.
- 게이트 배선, 소스 배선, 및 픽셀 전극을 갖는 반도체 장치에 있어서,절연 표면 위에 형성되는 상기 게이트 배선과,상기 게이트 배선 위에 형성되는 절연 막과,상기 절연 막 위에 형성되는 비정질 반도체 막과,상기 비정질 반도체 막 위에 형성되는 소스 영역 및 드레인 영역과,상기 소스 영역 및 상기 드레인 영역 위에 형성되는 상기 소스 배선 또는 전극과,상기 전극 위에 형성되는 상기 픽셀 전극을 포함하며,상기 드레인 영역 또는 상기 소스 영역의 단면은 상기 비정질 반도체 막의 단면 및 상기 전극의 단면과 함께 레지스터 내에 실질적으로 놓이고, 다른 단면은 상기 픽셀 전극의 단면 및 상기 전극의 다른 단면과 함께 레지스터 내에 실질적으로 놓이는 것을 특징으로 하는, 반도체 장치.
- 게이트 배선, 소스 배선, 및 픽셀 전극을 갖는 반도체 장치에 있어서,절연 표면 위에 형성되는 상기 게이트 배선과,상기 게이트 배선 위에 형성되는 절연 막과,상기 절연 막 위에 형성되는 비정질 반도체 막과,상기 비정질 반도체 막 위에 형성되는 소스 영역 및 드레인 영역과,상기 소스 영역 또는 상기 드레인 영역 위에 형성되는 상기 소스 배선 또는 전극과,상기 전극 위에 형성되는 상기 픽셀 전극을 포함하며,상기 비정질 반도체 막, 및 n 형 불순물 원소를 포함하는 비정질 반도체 막은 상기 소스 배선 아래에 적층되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 n 형 불순물 원소를 포함하는 비정질반도체 막으로 이루어지는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 절연 막, 상기 비정질 반도체 막, 상기 소스 영역 및 상기 드레인 영역은 대기에 노출되지 않고 연속적으로 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 절연 막, 상기 비정질 반도체 막, 상기 소스 영역 또는 상기 드레인 영역은 스퍼터링 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 절연 막, 상기 비정질 반도체 막, 상기 소스 영역 또는 상기 드레인 영역은 플라즈마 CVD 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,상기 게이트 배선은 주요 구성 요소가 Al, Ti, Mo, W, Ta, Nd 및 Cr 중 선택된 원소인 막; 그러한 원소들의 합금 막; 또는 그러한 막들의 다중 층 막으로 이루어진 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 8 항 중 어느 한 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 비정질 반도체 막과 상기 전극과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 9 항 중 어느 한 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 소스 배선과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 10 항 중 어느 한 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 소스 배선 및 상기 픽셀 전극과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 11 항 중 어느 한 항에 있어서,상기 소스 영역 및 상기 드레인 영역에 인접하는 상기 비정질 반도체 막의 영역들 내의 막 두께는 상기 소스 영역에 인접하는 영역과 상기 드레인 영역에 인접하는 영역 사이에 놓이는 상기 비정질 반도체 막의 영역 내의 막 두께보다 더 큰 것을 특징으로 하는, 반도체 장치.
- 제 1 항 내지 제 12 항 중 어느 한 항에 있어서,상기 반도체 장치는 상기 픽셀 전극이 투명한 전기-도전 막으로 이루어진 전송형의 액정 디스플레이 장치인 것을 특징으로 하는 반도체 장치
- 제 1 항 내지 제 13 항 중 어느 한 항에 있어서,상기 반도체 장치는, 상기 픽셀 전극이, 주요 구성 요소가 Al 또는 Ag인 막, 또는 Al 및 Ag의 다중 층 막으로 이루어진 반사형의 액정 디스플레이 장치인 것을 특징으로 하는 반도체 장치.
- 제 1 항 내지 제 14 항 중 어느 한 항에 있어서,상기 반도체 장치는 개인용 컴퓨터, 비디오 카메라, 휴대용 정보 터미널(portable information terminal), 디지털 카메라, 디지털 비디오 디스크 플레이어, 또는 전자 게임 장치인 것을 특징으로 하는 반도체 장치.
- 반도체 장치 제조 방법에 있어서,제 1 마스크를 이용함으로써 각각의 게이트 배선을 형성하는 제 1 단계와,상기 게이트 배선을 덮는 절연 막을 형성하는 제 2 단계와,상기 절연 막 위에 제 1 비정질 반도체 막을 형성하는 제 3 단계와,상기 비정질 반도체 막 위에, n 형 불순물 원소를 포함하는 제 2 비정질 반도체 막을 형성하는 제 4 단계와,상기 제 2 비정질 반도체 막 위에 제 1 전기-도전 막을 형성하는 제 5 단계와,상기 제 1 비정질 반도체 막, 상기 제 2 비정질 반도체 막 및 상기 제 1 도전 막이 제 2 마스크를 이용함으로써 선택적으로 제거되는 방법으로 소스 배선 및 전극을 형성하는 제 6 단계와,서로 접촉하여 상기 소스 배선 및 상기 전극 위에 놓인 제 2 전기-도전 막을 형성하는 제 7 단계와,상기 제 1 비정질 반도체 막, 상기 제 2 비정질 반도체 막, 상기 제 1 도전 막 및 상기 제 2 도전 막의 부분이 제 3 마스크를 이용함으로써 선택적으로 제거되는 방법으로, 사기 제 2 비정질 반도체 막으로 이루어진 소스 영역 및 드레인 영역과, 상기 제 2 도전 막으로 이루어진 픽셀 전극을 형성하는 제 8 단계를 포함하는 것을 특징으로 하는 반도체 장치 제조 방법.
- 제 16 항에 있어서,상기 제 2 단계부터 상기 제 5 단계까지는 대기에 노출 없이 연속적으로 수행되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 또는 제 17 항에 있어서,상기 절연 막은 스퍼터링 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 내지 제 18 항 중 어느 한 항에 있어서,상기 제 1 비정질 반도체 막은 스퍼터링 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 내지 제 19 항 중 어느 한 항에 있어서,상기 제 2 비정질 반도체 막은 스퍼터링 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 내지 제 19 항 중 어느 한 항에 있어서,상기 제 2 단계부터 상기 제 5 단계까지는 동일한 챔버 내에서 연속적으로 수행되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항에 있어서,상기 절연 막은 플라즈마 CVD 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 또는 제 22 항에 있어서,상기 제 1 비정질 반도체 막은 플라즈마 CVD 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항, 제 22 항 또는 제 23 항 중 어느 한 항에 있어서,상기 제 2 비정질 반도체 막은 플라즈마 CVD 공정에 의해 형성되는 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 내지 제 24 항 중 어느 한 항에 있어서,상기 제 2 도전 막은 투명 전기-도전 막인 것을 특징으로 하는, 반도체 장치 제조 방법.
- 제 16 항 내지 제 24 항 중 어느 한 항에 있어서,상기 제 2 도전 막은 반사성을 갖는 전기-도전 막인 것을 특징으로 하는, 반도체 장치 제조 방법.
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Cited By (4)
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KR101219034B1 (ko) * | 2003-12-03 | 2013-01-07 | 삼성디스플레이 주식회사 | 표시판 및 이를 포함하는 다중 도메인 액정 표시 장치 |
US8300192B2 (en) | 2004-10-06 | 2012-10-30 | Samsung Electronics Co., Ltd. | Liquid crystal display and thin film transistor array panel usable with the liquid crystal display |
US8477279B2 (en) | 2004-10-06 | 2013-07-02 | Samsung Display Co., Ltd. | Liquid crystal display and thin film transistor array panel usable with the liquid crystal display |
Also Published As
Publication number | Publication date |
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KR100800986B1 (ko) | 2008-02-11 |
US6806495B1 (en) | 2004-10-19 |
US20120229725A1 (en) | 2012-09-13 |
US8188478B2 (en) | 2012-05-29 |
US20050023528A1 (en) | 2005-02-03 |
US9099355B2 (en) | 2015-08-04 |
KR100800979B1 (ko) | 2008-02-11 |
US20100171895A1 (en) | 2010-07-08 |
JP2001250953A (ja) | 2001-09-14 |
KR20060034658A (ko) | 2006-04-24 |
US20110255022A1 (en) | 2011-10-20 |
TW483036B (en) | 2002-04-11 |
US20030138998A1 (en) | 2003-07-24 |
US6762082B2 (en) | 2004-07-13 |
US7973312B2 (en) | 2011-07-05 |
KR20070103326A (ko) | 2007-10-23 |
KR100884230B1 (ko) | 2009-02-17 |
US7705354B2 (en) | 2010-04-27 |
JP4118484B2 (ja) | 2008-07-16 |
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