JP5467036B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5467036B2
JP5467036B2 JP2010284420A JP2010284420A JP5467036B2 JP 5467036 B2 JP5467036 B2 JP 5467036B2 JP 2010284420 A JP2010284420 A JP 2010284420A JP 2010284420 A JP2010284420 A JP 2010284420A JP 5467036 B2 JP5467036 B2 JP 5467036B2
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Prior art keywords
transistor
insulating layer
oxide semiconductor
semiconductor layer
layer
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Japanese (ja)
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JP2011151383A5 (enExample
JP2011151383A (ja
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舜平 山崎
潤 小山
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Static Random-Access Memory (AREA)
JP2010284420A 2009-12-25 2010-12-21 半導体装置 Active JP5467036B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010284420A JP5467036B2 (ja) 2009-12-25 2010-12-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009296202 2009-12-25
JP2009296202 2009-12-25
JP2010284420A JP5467036B2 (ja) 2009-12-25 2010-12-21 半導体装置

Related Child Applications (1)

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JP2014011543A Division JP5593460B2 (ja) 2009-12-25 2014-01-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2011151383A JP2011151383A (ja) 2011-08-04
JP2011151383A5 JP2011151383A5 (enExample) 2014-01-16
JP5467036B2 true JP5467036B2 (ja) 2014-04-09

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ID=44186324

Family Applications (10)

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JP2010284420A Active JP5467036B2 (ja) 2009-12-25 2010-12-21 半導体装置
JP2014011543A Expired - Fee Related JP5593460B2 (ja) 2009-12-25 2014-01-24 半導体装置
JP2014156383A Expired - Fee Related JP5836449B2 (ja) 2009-12-25 2014-07-31 半導体装置
JP2015215645A Active JP6127112B2 (ja) 2009-12-25 2015-11-02 半導体装置
JP2017009280A Active JP6321837B2 (ja) 2009-12-25 2017-01-23 半導体装置
JP2018073276A Active JP6676687B2 (ja) 2009-12-25 2018-04-05 半導体装置
JP2020042787A Active JP6971348B2 (ja) 2009-12-25 2020-03-12 半導体装置
JP2021178662A Withdrawn JP2022009814A (ja) 2009-12-25 2021-11-01 半導体装置
JP2023141697A Active JP7657870B2 (ja) 2009-12-25 2023-08-31 記憶装置
JP2025052457A Pending JP2025089505A (ja) 2009-12-25 2025-03-26 記憶装置

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JP2014011543A Expired - Fee Related JP5593460B2 (ja) 2009-12-25 2014-01-24 半導体装置
JP2014156383A Expired - Fee Related JP5836449B2 (ja) 2009-12-25 2014-07-31 半導体装置
JP2015215645A Active JP6127112B2 (ja) 2009-12-25 2015-11-02 半導体装置
JP2017009280A Active JP6321837B2 (ja) 2009-12-25 2017-01-23 半導体装置
JP2018073276A Active JP6676687B2 (ja) 2009-12-25 2018-04-05 半導体装置
JP2020042787A Active JP6971348B2 (ja) 2009-12-25 2020-03-12 半導体装置
JP2021178662A Withdrawn JP2022009814A (ja) 2009-12-25 2021-11-01 半導体装置
JP2023141697A Active JP7657870B2 (ja) 2009-12-25 2023-08-31 記憶装置
JP2025052457A Pending JP2025089505A (ja) 2009-12-25 2025-03-26 記憶装置

Country Status (6)

Country Link
US (8) US8455868B2 (enExample)
JP (10) JP5467036B2 (enExample)
KR (4) KR101870119B1 (enExample)
CN (3) CN102804360B (enExample)
TW (2) TWI533439B (enExample)
WO (1) WO2011077967A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181167A (ja) * 2010-02-05 2011-09-15 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
JP2012119050A (ja) * 2010-11-08 2012-06-21 Semiconductor Energy Lab Co Ltd 半導体メモリ装置および半導体メモリ装置の駆動方法
JP2014160535A (ja) * 2010-04-07 2014-09-04 Semiconductor Energy Lab Co Ltd 半導体装置

Families Citing this family (246)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220153647A (ko) * 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
WO2011077946A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2519969A4 (en) 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR101762316B1 (ko) * 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101862823B1 (ko) 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101891065B1 (ko) * 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
WO2011114919A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8339837B2 (en) 2010-08-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI608486B (zh) 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
TWI539453B (zh) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
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JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
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JP2014195241A (ja) * 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
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