JP2016062901A - 半導体記憶装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000003860 storage Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
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- 238000000034 method Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 6
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- 239000011229 interlayer Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
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- 230000015556 catabolic process Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
Claims (10)
- 3次元配置された複数のメモリセルと、前記メモリセルと電気的に接続されたメモリ側配線層とを有し、基板を含まないアレイチップと、
基板と、前記基板の回路形成面に設けられた制御回路と、前記基板の前記回路形成面上に設けられ、前記制御回路と電気的に接続された回路側配線層と、を有し、前記回路側配線層を前記メモリ側配線層に対向させて前記アレイチップに対して貼り合わされた回路チップと、
前記メモリ側配線層と前記回路側配線層との間に設けられ、前記メモリ側配線層および前記回路側配線層に接合された接合金属と、
前記アレイチップまたは前記回路チップに設けられたパッドと、
前記アレイチップの表面側から前記パッドに達して設けられた外部接続電極と、
を備えた半導体記憶装置。 - 前記アレイチップは、
複数層の電極層と、前記電極層の間にそれぞれ設けられた複数層の絶縁層とを有する積層体と、
前記積層体を貫通して前記積層体の積層方向に延びるチャネルボディと、前記チャネルボディと前記電極層との間に設けられたメモリ膜と、を有する柱状部と、
前記柱状部の端部に接続されたビット線と、
前記柱状部の端部に接続されたソース線と、
を有する請求項1記載の半導体記憶装置。 - 前記複数のメモリセルが配置されたメモリセルアレイ領域の端で、前記複数の電極層は階段状に形成され、
前記メモリ側配線層は、前記階段状のそれぞれの前記電極層と接続されたワード配線層を有する請求項2記載の半導体記憶装置。 - 前記接合金属は、前記ビット線と電気的に接続された複数のビット線引出部を有し、
前記複数のビット線引出部は、前記積層方向で前記メモリセルアレイ領域に重なる領域に配置されている請求項3記載の半導体記憶装置。 - 前記接合金属は、前記ワード配線層と電気的に接続された複数のワード線引出部を有し、
前記パッドは、前記積層方向で前記ワード線引出部に重なる領域に設けられている請求項3または4に記載の半導体記憶装置。 - 前記パッドは、前記ソース線と同じレイヤーに、前記ソース線と同じ材料で設けられている請求項2〜5のいずれか1つに記載の半導体記憶装置。
- 前記パッドは、前記ワード配線層と同じレイヤーに、前記ワード配線層と同じ材料で設けられている請求項3〜5のいずれか1つに記載の半導体記憶装置。
- 前記積層体における前記メモリ側配線層とは反対側のレイヤーにゲート層が設けられ、
前記パッドは、前記ゲート層と同じレイヤーに、前記ゲート層と同じ材料で設けられている請求項2〜5のいずれか1つに記載の半導体記憶装置。 - 前記パッドは、前記回路側配線層と同じレイヤーに、前記回路側配線層と同じ材料で設けられている請求項2〜5のいずれか1つに記載の半導体記憶装置。
- 第1基板と、前記第1基板上に設けられ3次元配置された複数のメモリセルと、前記メモリセルと電気的に接続されたメモリ側配線層と、前記メモリ側配線層と接続された第1接合金属と、を有するアレイウェーハと、
第2基板と、前記第2基板の回路形成面に設けられた制御回路と、前記第2基板の前記回路形成面上に設けられ、前記制御回路と電気的に接続された回路側配線層と、前記回路側配線層と接続された第2接合金属と、を有する回路ウェーハと、
を前記第1接合金属と前記第2接合金属とを接合させて貼り合わせ、
前記アレイウェーハと前記回路ウェーハとを貼り合わせた後、前記アレイウェーハの前記第1基板を除去し、
前記第1基板が除去された前記アレイウェーハの表面側から、前記アレイウェーハまたは前記回路ウェーハに設けられたパッドに達するビアを形成し、
前記ビア内に外部接続電極を形成する
半導体記憶装置の製造方法。
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014186684A JP6203152B2 (ja) | 2014-09-12 | 2014-09-12 | 半導体記憶装置の製造方法 |
US14/806,034 US9558945B2 (en) | 2014-09-12 | 2015-07-22 | Semiconductor memory device with electrode connecting to circuit chip through memory array chip |
US15/388,318 US10090315B2 (en) | 2014-09-12 | 2016-12-22 | Semiconductor memory device in which an array chip including three-dimensionally disposed memory cells bonded to a control circuit chip |
US16/106,639 US10403635B2 (en) | 2014-09-12 | 2018-08-21 | Semiconductor memory device having bonding metal between an array chip and a circuit chip |
US16/121,123 US20180374864A1 (en) | 2014-09-12 | 2018-09-04 | Semiconductor memory device |
US16/409,637 US10892269B2 (en) | 2014-09-12 | 2019-05-10 | Semiconductor memory device having a bonded circuit chip including a solid state drive controller connected to a control circuit |
US16/508,577 US10892270B2 (en) | 2014-09-12 | 2019-07-11 | Semiconductor memory device having an array chip bonded to a circuit chip by a bonding metal |
US17/106,414 US11594547B2 (en) | 2014-09-12 | 2020-11-30 | Semiconductor device having a pad proximate to a step structure section of an array chip |
US17/113,285 US11871576B2 (en) | 2014-09-12 | 2020-12-07 | Semiconductor memory device including integrated control circuit and solid-state drive controller |
US18/100,613 US20230165009A1 (en) | 2014-09-12 | 2023-01-24 | Semiconductor memory device and method for manufacturing same |
US18/519,872 US20240099013A1 (en) | 2014-09-12 | 2023-11-27 | Semiconductor memory device |
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Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018026518A (ja) * | 2016-08-12 | 2018-02-15 | 東芝メモリ株式会社 | 半導体記憶装置 |
US10074667B1 (en) | 2017-03-10 | 2018-09-11 | Toshiba Memory Corporation | Semiconductor memory device |
JP2019057662A (ja) * | 2017-09-22 | 2019-04-11 | 東芝メモリ株式会社 | 記憶装置 |
US10297578B2 (en) | 2017-03-07 | 2019-05-21 | Toshiba Memory Corporation | Memory device |
US10381374B2 (en) | 2017-09-19 | 2019-08-13 | Toshiba Memory Corporation | Semiconductor memory |
KR20190122794A (ko) * | 2017-03-08 | 2019-10-30 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 3차원 메모리 디바이스를 테스트하는 구조 및 방법 |
JP2019220680A (ja) * | 2018-06-18 | 2019-12-26 | インテル・コーポレーション | 別々に加工された後に接合されたウェハ内に制御回路とアレイを備えた三次元(3d)メモリ |
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US10403635B2 (en) | 2019-09-03 |
US20180358373A1 (en) | 2018-12-13 |
US20170103994A1 (en) | 2017-04-13 |
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US10892270B2 (en) | 2021-01-12 |
US20160079164A1 (en) | 2016-03-17 |
US11594547B2 (en) | 2023-02-28 |
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US20210082942A1 (en) | 2021-03-18 |
US20230165009A1 (en) | 2023-05-25 |
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