JP2005522873A - 縦方向構造を有するledの製作方法 - Google Patents
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Abstract
Description
Claims (42)
- 金属層と、
金属層に隣接するGaNコンタクト層と、
GaN緩衝層と、
GaNコンタクト層とGaN緩衝層の間に配置された発光層と、
GaN緩衝層上のオームコンタクトと
を備えた発光デバイス。 - さらに、オームコンタクトを覆う金属パッドを含む、請求項1に記載の発光デバイス。
- GaNコンタクト層、発光層及びGaN緩衝層の表面を覆う不活性層を含む、請求項1に記載の発光デバイス。
- 不活性層がオームコンタクトの一部を覆う、請求項3に記載の発光デバイス。
- 不活性層がSiO2及びSi3N4から選択された材料を含む、請求項3に記載の発光デバイス。
- 発光層がGaを含む、請求項1に記載の発光デバイス。
- GaNコンタクト層がドープ処理されている、請求項1に記載の発光デバイス。
- 金属層が、Cu、Cr、Ni、Au、Ag、Mo、Pt、Pd、W及びAlからなる群から選択される金属を含む、請求項1に記載の発光デバイス。
- 金属層が窒化チタンを含む、請求項1に記載の発光デバイス。
- 半導体デバイスを製造する方法であって、
複数の半導体層を絶縁性基板の上に成長させるステップと、
第1のオームコンタクトを複数の半導体層上に形成するステップと、
第1のオームコンタクトを覆う金属支持層を形成するステップと、
絶縁基板を除去するステップと、
第2のオームコンタクトを複数の半導体層上に形成するステップと
を備える方法。 - さらに、複数の半導体層を通して、複数の半導体デバイスの各々を確定するトレンチを形成するステップを含む、請求項10に記載の半導体デバイス製造方法。
- トレンチが絶縁基板中に延びる、請求項11に記載の半導体デバイス製造方法。
- さらに、トレンチを充填してポストを形成するステップを含む、請求項11に記載の半導体デバイス製造方法。
- 金属支持層でポストを覆う、請求項13に記載の半導体デバイス製造方法。
- さらに、絶縁基板を除去した後で複数の半導体層を不活性化することを含む、請求項10に記載の方法。
- 第2オームコンタクトを形成した後で不活性化を行う、請求項15に記載の方法。
- さらに、第2オームコンタクトを覆う金属パッドを形成することを含む、請求項10に記載の方法。
- さらに、個々の半導体デバイスを分離することを含む、請求項10に記載の方法。
- 個々の半導体デバイスの分離が金属支持層を通してエッチングすることを含む、請求項18に記載の方法。
- 個々の半導体デバイスの分離が金属支持層ののこ引きを含む、請求項18に記載の方法。
- 金属支持層ののこ引きを0℃未満の温度で行う、請求項20に記載の方法。
- 誘導結合プラズマ反応性イオンエッチング(ICP RIE)を用いてトレンチの形成を行う、請求項10に記載の方法。
- レーザリフトオフを用いて絶縁基板の除去を行う、請求項10に記載の方法。
- レーザリフトオフは絶縁基板を通してレーザ光を放射することを含む、請求項23に記載の方法。
- サファイア基板上にGaN緩衝層を形成するステップと、
GaN緩衝層上に能動層を形成するステップと、
能動層上にGaNコンタクト層を形成するステップと、
複数の発光ダイオードの各々の位置を識別するステップと、
第1オームコンタクトを個々の発光ダイオード上に形成するステップと、
第1オームコンタクトを覆う金属支持構造を形成するステップと、
サファイア基板を除去するステップと、
第2オームコンタクトを個々の発光ダイオード上に形成するステップと
を含む、発光ダイオード製造方法。 - さらに、複数の半導体層に亘り、個々の半導体層の間にトレンチを形成するステップを含む、請求項25に記載の半導体デバイス製造方法。
- トレンチをサファイア基板中に延ばす、請求項26に記載の半導体デバイス製造方法。
- さらに、トレンチを充填してポストを形成するステップを含む、請求項27に記載の半導体デバイス製造方法。
- 金属支持構造でポストを覆う、請求項28に記載の半導体デバイス製造方法。
- さらに、GaN緩衝層、能動層、及びGaNコンタクト層の露出部分を覆う不活性層を、サファイア基板の除去後に、トレンチ内に延びるように形成するステップを含む、請求項26に記載の方法。
- さらに、第2オームコンタクト上に金属パッドを形成するステップを含む、請求項25に記載の方法。
- さらに、個々の発光ダイオードを分離するステップを含む、請求項25に記載の方法。
- 個々の発光ダイオードを分離するステップが、金属支持構造を通してエッチングするステップを含む、請求項32に記載の方法。
- 個々の発光ダイオードが金属支持構造を通してのこ引きすることを含む、請求項32に記載の方法。
- 0℃未満の温度で金属支持構造を通してのこ引きする、請求項34に記載の方法。
- 誘導結合プラズマ反応性イオンエッチング(ICP RIE)を用いてトレンチの形成を行う、請求項26に記載の方法。
- レーザリフトオフを用いてサファイア基板の除去を行う、請求項25に記載の方法。
- レーザリフトオフがサファイア基板を通してレーザ光を放射することを含む、請求項37に記載の方法。
- 金属支持構造の形成が電気メッキすることを含む、請求項25に記載の方法。
- 金属支持構造の形成が弱電メッキすることを含む、請求項25に記載の方法。
- 金属支持構造の形成がCVDすることを含む、請求項25に記載の方法。
- 金属支持構造の形成がスパッタリングすることを含む、請求項25に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/118,316 | 2002-04-09 | ||
US10/118,316 US20030189215A1 (en) | 2002-04-09 | 2002-04-09 | Method of fabricating vertical structure leds |
PCT/US2003/009501 WO2003088318A2 (en) | 2002-04-09 | 2003-03-31 | Method of fabricating vertical structure leds |
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JP2013077709A Division JP2013175748A (ja) | 2002-04-09 | 2013-04-03 | 縦方向構造を有するledの製作方法 |
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JP2005522873A true JP2005522873A (ja) | 2005-07-28 |
JP5325365B2 JP5325365B2 (ja) | 2013-10-23 |
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JP2003585153A Expired - Fee Related JP5325365B2 (ja) | 2002-04-09 | 2003-03-31 | 縦方向構造を有するledの製作方法 |
JP2013077709A Pending JP2013175748A (ja) | 2002-04-09 | 2013-04-03 | 縦方向構造を有するledの製作方法 |
JP2015076060A Expired - Lifetime JP6546432B2 (ja) | 2002-04-09 | 2015-04-02 | 縦方向構造を有するledの製作方法 |
JP2016208006A Expired - Fee Related JP6268259B2 (ja) | 2002-04-09 | 2016-10-24 | 発光デバイス |
JP2018168460A Expired - Lifetime JP6547047B2 (ja) | 2002-04-09 | 2018-09-10 | 発光デバイス |
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JP2013077709A Pending JP2013175748A (ja) | 2002-04-09 | 2013-04-03 | 縦方向構造を有するledの製作方法 |
JP2015076060A Expired - Lifetime JP6546432B2 (ja) | 2002-04-09 | 2015-04-02 | 縦方向構造を有するledの製作方法 |
JP2016208006A Expired - Fee Related JP6268259B2 (ja) | 2002-04-09 | 2016-10-24 | 発光デバイス |
JP2018168460A Expired - Lifetime JP6547047B2 (ja) | 2002-04-09 | 2018-09-10 | 発光デバイス |
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US (19) | US20030189215A1 (ja) |
EP (8) | EP2261950B1 (ja) |
JP (5) | JP5325365B2 (ja) |
KR (1) | KR100921457B1 (ja) |
AT (1) | ATE412972T1 (ja) |
AU (1) | AU2003241280A1 (ja) |
DE (3) | DE20321880U1 (ja) |
WO (1) | WO2003088318A2 (ja) |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007032546A1 (en) * | 2005-09-16 | 2007-03-22 | Showa Denko K.K. | Production method for nitride semiconductor light emitting device |
JP2007081332A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子及びその製造方法 |
JP2007081313A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子及びその製造方法 |
JP2007081312A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子の製造方法 |
JP2007521635A (ja) * | 2003-09-19 | 2007-08-02 | ティンギ テクノロジーズ プライベート リミテッド | 半導体デバイスの製造 |
JP2007207981A (ja) * | 2006-02-01 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
JP2007258338A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体発光素子 |
JP2007529099A (ja) * | 2003-09-19 | 2007-10-18 | ティンギ テクノロジーズ プライベート リミテッド | 半導体デバイス上における伝導性金属層の製造 |
JP2007299935A (ja) * | 2006-04-28 | 2007-11-15 | Showa Denko Kk | 窒化物系半導体発光素子の製造方法、窒化物系半導体発光素子及びランプ |
JP2008140871A (ja) * | 2006-11-30 | 2008-06-19 | Toyoda Gosei Co Ltd | Iii−v族半導体素子、およびその製造方法 |
JP2009510733A (ja) * | 2005-09-30 | 2009-03-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップおよび該チップの製造方法 |
JP2009065182A (ja) * | 2002-09-30 | 2009-03-26 | Osram Opto Semiconductors Gmbh | 半導体構成素子の製造方法 |
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