JP2013175748A - 縦方向構造を有するledの製作方法 - Google Patents
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Abstract
【解決手段】導電性支持構造と、第1の表面、第2の表面、及び、側面を有する半導体構造と、半導体構造が第1の型の層128、能動層126、及び、第2の型の層124を備え、第1の表面が第2の表面と比べて導電性支持構造に最も近く、第1の型の層128に電気的に接続された第1の電極150と、第2の型の層124に電気的に接続された第2の電極160と、半導体構造の側面上の不活性層162と、不活性層162が第2の表面上の第2の型の層124を部分的に覆うように半導体構造の第2の表面上にさらに配置され、不活性層162が半導体構造の第1の表面を部分的に覆うように半導体構造と導電性支持構造との間に部分的に配置され、半導体構造の第2の表面を覆う不活性層162の領域が、半導体構造の第1の表面を覆う不活性層の領域より大きい、縦型発光デバイス。
【選択図】図15
Description
Claims (25)
- 導電性支持構造と、
第1の表面、第2の表面、及び、側面を有する、導電性支持構造を覆う半導体構造と、半導体構造が第1の型の層、第1の型の層上の能動層、及び、能動層上の第2の型の層を備え、第2の表面が第1の表面の反対側にあり、第1の表面が第2の表面と比べて導電性支持構造に最も近く、
第1の型の層に電気的に接続された第1の電極と、第1の電極が導電性支持構造と半導体構造の第1の表面との間に配置され、
第2の型の層に電気的に接続された第2の電極と、第2の電極が半導体構造の第2の表面上に配置され、
半導体構造の側面上の不活性層と、不活性層が第2の表面上の第2の型の層を部分的に覆うように、半導体構造の側面上の不活性層の部分が半導体構造の第2の表面上にさらに配置され、
を備え、
不活性層が半導体構造の第1の表面を部分的に覆うように、不活性層が半導体構造と導電性支持構造との間に部分的に配置され、
半導体構造の第2の表面を覆う不活性層の領域が、半導体構造の第1の表面を覆う不活性層の領域より大きい、縦型発光デバイス。 - 第2の電極上に金属パッドをさらに備える、請求項1に記載のデバイス。
- 金属パッドが、Cr及びAuの少なくとも1つを含む、請求項2に記載のデバイス。
- 不活性層が、第2の電極の上部表面部分を露出するための開かれた場所を形成するため、パターン化される、請求項2に記載のデバイス。
- 金属パッドが、不活性層のパターン化された部分より高く配置される、請求項4に記載のデバイス。
- 金属パッドが、不活性層のパターン化された部分と接触する、請求項4に記載のデバイス。
- 導電性支持構造と半導体構造との間に部分的に配置される不活性層が、半導体構造の第2の表面上に配置される不活性層の部分まで延びる、請求項1に記載のデバイス。
- 不活性層が、酸化ケイ素、又は、窒化ケイ素を含む、請求項1に記載のデバイス。
- 導電性支持構造が、金属、又は、金属包含材料を含む、請求項1に記載のデバイス。
- 導電性支持構造が、Cu、Cr、Ni、Au、Ag、Mo、Pt、Pd、W、及び、Alからなる群から選択される少なくとも1つの金属を含む、請求項9に記載のデバイス。
- 第1の電極と導電性支持構造の間に金属層をさらに備える、請求項1に記載のデバイス。
- 金属層が、導電性支持構造を金属層上に成長させることを容易にするように構成される、請求項11に記載のデバイス。
- 導電性支持構造と、
第1の表面、第2の表面、及び、側面を有する、導電性支持構造を覆う半導体構造と、半導体構造が第1の型の層、第1の型の層上の能動層、及び、能動層上の第2の型の層を備え、第2の表面が第1の表面の反対側にあり、第1の表面が第2の表面と比べて導電性支持構造に最も近く、
第1の型の層に電気的に接続された第1の金属層と、第1の金属層が導電性支持構造と半導体構造の第1の表面との間に配置され、
半導体構造の第2の表面上の第1の部分と、半導体構造の側面上の第2の部分と、を備える不活性層と、第1の部分が、半導体構造の第2の表面と接触する第1の表面と、第1の部分の第1の表面の反対側の第2の表面とを有し、
第2の型の層に電気的に接続された第2の金属層と、第2の金属層が半導体構造の第2の表面上に配置され、第2の金属層が第1の部分の第2の表面より高く配置された第1の部位を備え、第2の金属層の幅が半導体構造の幅より小さい、
を備える、半導体発光デバイス。 - 第2の金属層が、第1の部分の第2の表面より低く配置された第2の部位を備える、請求項13に記載のデバイス。
- 第2の部位が、第1の部分の第2の表面の水平面に対して下向きに突き出ている、請求項14に記載のデバイス。
- 不活性層の第1の部分が、第2の金属層と接触している、請求項13に記載のデバイス。
- 第2の金属層が、半導体構造の第2の表面上の第2の電極と、第2の電極上の金属パッドと、を備える、請求項13に記載のデバイス。
- 第1の部分の第2の表面が、第2の電極より高く配置される、請求項17に記載のデバイス。
- 金属パッドが、平坦でない表面を有する、請求項17に記載のデバイス。
- 平坦でない表面が、第2の電極に面している、請求項19に記載のデバイス。
- 金属パッドが、Cr又はAuの1つを含む、請求項17に記載のデバイス。
- 不活性層が、導電性支持構造と半導体構造との間に部分的に配置される第3の部分を備える、請求項13に記載のデバイス。
- 導電性支持構造が、金属、又は、金属包含材料を含む、請求項13に記載のデバイス。
- 能動層と第1の型の層との間の領域が、第1の金属層と第1の型の層との間の領域と実質的に同じ大きさである、請求項13に記載のデバイス。
- 第1の金属層が、第1の電極を備える、請求項13に記載のデバイス。
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US10/118,316 | 2002-04-09 | ||
US10/118,316 US20030189215A1 (en) | 2002-04-09 | 2002-04-09 | Method of fabricating vertical structure leds |
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JP2016208006A Expired - Fee Related JP6268259B2 (ja) | 2002-04-09 | 2016-10-24 | 発光デバイス |
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---|---|---|---|---|
US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
CN1323441C (zh) * | 2001-10-12 | 2007-06-27 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
KR101030068B1 (ko) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
US20050082575A1 (en) * | 2002-10-29 | 2005-04-21 | Lung-Chien Chen | Structure and manufacturing method for GaN light emitting diodes |
US7244628B2 (en) * | 2003-05-22 | 2007-07-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor devices |
KR20110042249A (ko) * | 2003-06-04 | 2011-04-25 | 유명철 | 수직 구조 화합물 반도체 디바이스의 제조 방법 |
DE10326507A1 (de) * | 2003-06-12 | 2005-01-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines bruchfesten scheibenförmigen Gegenstands sowie zugehörige Halbleiterschaltungsanordung |
US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
EP1668687A4 (en) * | 2003-09-19 | 2007-11-07 | Tinggi Tech Private Ltd | FABRICATION OF A CONDUCTIVE METAL LAYER ON SEMICONDUCTOR DEVICES |
WO2005029573A1 (en) * | 2003-09-19 | 2005-03-31 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
TWM255514U (en) * | 2003-10-16 | 2005-01-11 | Arima Optoelectronics Corp | Structure improvement of Gallium Indium Nitride light-emitting diode |
KR100576854B1 (ko) * | 2003-12-20 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 제조 방법과 이를 이용한 질화물 반도체 |
KR100576856B1 (ko) * | 2003-12-23 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
US6969626B2 (en) * | 2004-02-05 | 2005-11-29 | Advanced Epitaxy Technology | Method for forming LED by a substrate removal process |
JP2005223165A (ja) | 2004-02-06 | 2005-08-18 | Sanyo Electric Co Ltd | 窒化物系発光素子 |
EP1730790B1 (en) * | 2004-03-15 | 2011-11-09 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
US7122398B1 (en) * | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
JP2005298554A (ja) * | 2004-04-07 | 2005-10-27 | Sumitomo Electric Ind Ltd | 膜厚方向に弾性回復性を有する延伸ポリテトラフルオロエチレン多孔質膜、その製造方法、及び該多孔質膜の使用 |
EP1756875A4 (en) * | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
CN101901858B (zh) * | 2004-04-28 | 2014-01-29 | 沃提科尔公司 | 垂直结构半导体器件 |
KR100595884B1 (ko) * | 2004-05-18 | 2006-07-03 | 엘지전자 주식회사 | 질화물 반도체 소자 제조 방법 |
TWI433343B (zh) * | 2004-06-22 | 2014-04-01 | Verticle Inc | 具有改良光輸出的垂直構造半導體裝置 |
EP1787336B1 (en) | 2004-06-30 | 2016-01-20 | Seoul Viosys Co., Ltd | Light emitting element comprising a plurality of electrically connected light emitting cells and method of manufacturing the same |
TWM261838U (en) * | 2004-09-16 | 2005-04-11 | Super Nova Optoelectronics Cor | Structure for GaN based LED with high light extraction efficiency |
US20060076574A1 (en) * | 2004-10-12 | 2006-04-13 | Liang-Wen Wu | Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capability |
CN100561758C (zh) * | 2004-10-22 | 2009-11-18 | 首尔Opto仪器股份有限公司 | 氮化镓化合物半导体发光元件及其制造方法 |
KR100667508B1 (ko) | 2004-11-08 | 2007-01-10 | 엘지전자 주식회사 | 발광 소자 및 그의 제조방법 |
TWI389334B (zh) * | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
US20060124941A1 (en) * | 2004-12-13 | 2006-06-15 | Lee Jae S | Thin gallium nitride light emitting diode device |
US20060154393A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
US7186580B2 (en) | 2005-01-11 | 2007-03-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7432119B2 (en) * | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US8871547B2 (en) | 2005-01-11 | 2014-10-28 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate |
US8802465B2 (en) | 2005-01-11 | 2014-08-12 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
EP1681712A1 (en) * | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
CN100352116C (zh) * | 2005-01-18 | 2007-11-28 | 北京大学 | 自然解理腔面的GaN基激光二极管的制备方法 |
TWI308396B (en) * | 2005-01-21 | 2009-04-01 | Epistar Corp | Light emitting diode and fabricating method thereof |
KR101165257B1 (ko) * | 2005-01-26 | 2012-07-19 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
US7932111B2 (en) * | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
JP4818732B2 (ja) * | 2005-03-18 | 2011-11-16 | シャープ株式会社 | 窒化物半導体素子の製造方法 |
KR100638732B1 (ko) * | 2005-04-15 | 2006-10-30 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자의 제조방법 |
JP4707450B2 (ja) * | 2005-05-18 | 2011-06-22 | イーストマン コダック カンパニー | 画像処理装置及びホワイトバランス調整装置 |
KR101128612B1 (ko) * | 2005-05-24 | 2012-03-26 | 엘지이노텍 주식회사 | 발광 소자 및 그의 제조 방법 |
US7625778B2 (en) * | 2005-06-08 | 2009-12-01 | Chunghwa Picture Tubes, Ltd. | Method of manufacturing a substrate-free flip chip light emitting diode |
US8168000B2 (en) * | 2005-06-15 | 2012-05-01 | International Rectifier Corporation | III-nitride semiconductor device fabrication |
KR20060131327A (ko) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
KR100599012B1 (ko) * | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
KR100849788B1 (ko) * | 2005-06-30 | 2008-07-31 | 삼성전기주식회사 | 수직형 반도체 발광 소자의 제조 방법 |
KR100658303B1 (ko) * | 2005-07-04 | 2006-12-14 | 엘지전자 주식회사 | 메탈지지층을 포함하는 수직형 구조의 발광 다이오드 |
KR100606551B1 (ko) | 2005-07-05 | 2006-08-01 | 엘지전자 주식회사 | 발광소자 제조방법 |
KR100691186B1 (ko) * | 2005-07-12 | 2007-03-09 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
KR100617873B1 (ko) * | 2005-07-15 | 2006-08-28 | 엘지전자 주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
KR100682271B1 (ko) * | 2005-07-29 | 2007-02-15 | 엘지전자 주식회사 | 수직형 발광소자 제조방법 |
KR100691111B1 (ko) * | 2005-08-09 | 2007-03-09 | 엘지전자 주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
KR100975711B1 (ko) * | 2005-09-13 | 2010-08-12 | 쇼와 덴코 가부시키가이샤 | 질화물 반도체 발광 장치 및 그 제조 방법 |
KR100976311B1 (ko) * | 2005-09-16 | 2010-08-16 | 쇼와 덴코 가부시키가이샤 | 질화물 반도체 발광장치 제조 방법 |
JP4799974B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
JP4799975B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
JP2007081312A (ja) * | 2005-09-16 | 2007-03-29 | Showa Denko Kk | 窒化物系半導体発光素子の製造方法 |
KR100691363B1 (ko) * | 2005-09-23 | 2007-03-12 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
DE102005061346A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102005053274A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement |
KR100714589B1 (ko) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
US8124454B1 (en) * | 2005-10-11 | 2012-02-28 | SemiLEDs Optoelectronics Co., Ltd. | Die separation |
KR100657735B1 (ko) * | 2005-10-11 | 2006-12-14 | 엘지전자 주식회사 | 수직형 발광소자 제조방법 |
US8778780B1 (en) * | 2005-10-13 | 2014-07-15 | SemiLEDs Optoelectronics Co., Ltd. | Method for defining semiconductor devices |
SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
KR100752348B1 (ko) * | 2005-10-20 | 2007-08-27 | (주) 비앤피 사이언스 | 수직 구조 발광 다이오드 제조 방법 |
AP2008004469A0 (en) * | 2005-10-21 | 2008-06-30 | Taylor Biomass Energy Llc | Process and system for gasification with in-situ tar removal |
US20070093037A1 (en) * | 2005-10-26 | 2007-04-26 | Velox Semicondutor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
CN100474642C (zh) * | 2005-10-27 | 2009-04-01 | 晶能光电(江西)有限公司 | 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法 |
US7829909B2 (en) * | 2005-11-15 | 2010-11-09 | Verticle, Inc. | Light emitting diodes and fabrication methods thereof |
JP2007158111A (ja) * | 2005-12-06 | 2007-06-21 | Toyoda Gosei Co Ltd | 半導体デバイスの製造方法 |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
KR100764420B1 (ko) * | 2005-12-23 | 2007-10-05 | 삼성전기주식회사 | 슬림형 엘이디 패키지 |
JP2007207981A (ja) * | 2006-02-01 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
KR100735488B1 (ko) * | 2006-02-03 | 2007-07-04 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자의 제조방법 |
KR100714637B1 (ko) * | 2006-02-09 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조방법 |
KR101125339B1 (ko) | 2006-02-14 | 2012-03-27 | 엘지이노텍 주식회사 | 질화물계 반도체 발광소자 및 그 제조 방법 |
US7928462B2 (en) | 2006-02-16 | 2011-04-19 | Lg Electronics Inc. | Light emitting device having vertical structure, package thereof and method for manufacturing the same |
US8124957B2 (en) | 2006-02-22 | 2012-02-28 | Cree, Inc. | Low resistance tunnel junctions in wide band gap materials and method of making same |
US7737451B2 (en) * | 2006-02-23 | 2010-06-15 | Cree, Inc. | High efficiency LED with tunnel junction layer |
JP2007258338A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体発光素子 |
KR100774196B1 (ko) * | 2006-03-14 | 2007-11-08 | 엘지전자 주식회사 | 수직형 발광 소자 제조방법 |
US7696523B2 (en) | 2006-03-14 | 2010-04-13 | Lg Electronics Inc. | Light emitting device having vertical structure and method for manufacturing the same |
US8420505B2 (en) * | 2006-03-25 | 2013-04-16 | International Rectifier Corporation | Process for manufacture of thin wafer |
JP5232971B2 (ja) * | 2006-04-28 | 2013-07-10 | 豊田合成株式会社 | 窒化物系半導体発光素子の製造方法 |
DE102006033502A1 (de) * | 2006-05-03 | 2007-11-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen |
KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
KR100735496B1 (ko) * | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | 수직구조 질화갈륨계 led 소자의 제조방법 |
EP2041802B1 (en) * | 2006-06-23 | 2013-11-13 | LG Electronics Inc. | Light emitting diode having vertical topology and method of making the same |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
US20080054291A1 (en) * | 2006-08-31 | 2008-03-06 | Samsung Electronics Co., Ltd. | Vertical semiconductor light-emitting device and method of manufacturing the same |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
KR101239850B1 (ko) * | 2006-09-26 | 2013-03-06 | 서울옵토디바이스주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
KR100786802B1 (ko) * | 2006-09-26 | 2007-12-18 | 한국광기술원 | 보호막을 구비한 수직형 반도체 발광소자 및 제조방법 |
US20080087875A1 (en) * | 2006-10-11 | 2008-04-17 | Feng-Hsu Fan | Protection for the epitaxial structure of metal devices |
US8921204B2 (en) * | 2006-10-11 | 2014-12-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses |
US20080089829A1 (en) * | 2006-10-13 | 2008-04-17 | Rensselaer Polytechnic Institute | In-situ back-contact formation and site-selective assembly of highly aligned carbon nanotubes |
KR101252558B1 (ko) * | 2006-11-06 | 2013-04-08 | 엘지이노텍 주식회사 | 수직형 발광 소자의 제조방법 |
KR100867541B1 (ko) | 2006-11-14 | 2008-11-06 | 삼성전기주식회사 | 수직형 발광 소자의 제조 방법 |
JP4910664B2 (ja) * | 2006-11-30 | 2012-04-04 | 豊田合成株式会社 | Iii−v族半導体素子の製造方法 |
US7781241B2 (en) | 2006-11-30 | 2010-08-24 | Toyoda Gosei Co., Ltd. | Group III-V semiconductor device and method for producing the same |
TWI410164B (zh) * | 2007-02-12 | 2013-09-21 | Nat Univ Chung Hsing | 固態發光元件之光條的製作方法 |
US20080217634A1 (en) * | 2007-03-06 | 2008-09-11 | Wen-Huang Liu | Vertical light-emitting diode structure with omni-directional reflector |
JP4290745B2 (ja) | 2007-03-16 | 2009-07-08 | 豊田合成株式会社 | Iii−v族半導体素子の製造方法 |
KR100888966B1 (ko) * | 2007-03-20 | 2009-03-17 | 엘지전자 주식회사 | 수직형 발광 소자의 제조방법 |
KR100871742B1 (ko) * | 2007-05-25 | 2008-12-05 | 김구영 | 발광다이오드의 다중 제어 장치 |
KR100858322B1 (ko) * | 2007-05-30 | 2008-09-11 | (주)웨이브스퀘어 | 수직구조를 갖는 질화갈륨계 led소자의 제조방법 |
US7646025B1 (en) | 2007-05-31 | 2010-01-12 | Chien-Min Sung | Diamond LED devices and associated methods |
US8309967B2 (en) * | 2007-05-31 | 2012-11-13 | Chien-Min Sung | Diamond LED devices and associated methods |
US9082892B2 (en) * | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
TWI411124B (zh) * | 2007-07-10 | 2013-10-01 | Delta Electronics Inc | 發光二極體裝置及其製造方法 |
KR101289230B1 (ko) * | 2007-07-23 | 2013-07-29 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US8362494B2 (en) * | 2007-08-08 | 2013-01-29 | Agency For Science, Technology And Research | Electro-optic device with novel insulating structure and a method for manufacturing the same |
US8187900B2 (en) * | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
DE102007043902A1 (de) * | 2007-09-14 | 2009-03-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln metallisierter Halbleiterbauelemente |
WO2009057241A1 (ja) * | 2007-11-01 | 2009-05-07 | Panasonic Corporation | 半導体発光素子およびそれを用いた半導体発光装置 |
KR100975659B1 (ko) * | 2007-12-18 | 2010-08-17 | 포항공과대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
WO2009078574A1 (en) * | 2007-12-18 | 2009-06-25 | Seoul Opto Device Co., Ltd. | Light emitting device and method of manufacturing the same |
WO2009084857A2 (en) * | 2007-12-28 | 2009-07-09 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
KR20090072980A (ko) | 2007-12-28 | 2009-07-02 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
KR20090077425A (ko) * | 2008-01-11 | 2009-07-15 | 엘지이노텍 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
KR101510377B1 (ko) * | 2008-01-21 | 2015-04-06 | 엘지이노텍 주식회사 | 질화물 반도체 및 수직형 발광 소자의 제조방법 |
JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
JP5288852B2 (ja) * | 2008-03-21 | 2013-09-11 | スタンレー電気株式会社 | 半導体素子の製造方法 |
TWI447783B (zh) * | 2008-04-28 | 2014-08-01 | Advanced Optoelectronic Tech | 三族氮化合物半導體發光元件之製造方法及其結構 |
JP5236070B2 (ja) * | 2008-05-13 | 2013-07-17 | シーメンス アクチエンゲゼルシヤフト | Ledアレイ |
KR101428719B1 (ko) * | 2008-05-22 | 2014-08-12 | 삼성전자 주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치 |
US7754511B2 (en) * | 2008-07-08 | 2010-07-13 | High Power Opto. Inc. | Laser lift-off method |
KR100962898B1 (ko) | 2008-11-14 | 2010-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8211781B2 (en) * | 2008-11-10 | 2012-07-03 | Stanley Electric Co., Ltd. | Semiconductor manufacturing method |
JP5237763B2 (ja) * | 2008-11-10 | 2013-07-17 | スタンレー電気株式会社 | 半導体素子の製造方法 |
TWI389347B (zh) * | 2008-11-13 | 2013-03-11 | Epistar Corp | 光電元件及其製作方法 |
USRE48774E1 (en) | 2008-11-14 | 2021-10-12 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor light emitting device |
KR101525076B1 (ko) * | 2008-12-15 | 2015-06-03 | 삼성전자 주식회사 | 발광 소자의 제조 방법 |
JP5293592B2 (ja) * | 2008-12-26 | 2013-09-18 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法およびテンプレート基板 |
JP5293591B2 (ja) * | 2008-12-26 | 2013-09-18 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法、およびテンプレート基板 |
US8680581B2 (en) | 2008-12-26 | 2014-03-25 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor and template substrate |
KR101533817B1 (ko) * | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
KR100934636B1 (ko) * | 2009-02-27 | 2009-12-31 | 한빔 주식회사 | 발광다이오드 소자의 제조방법 및 그의 제조 중간체 |
KR101541512B1 (ko) | 2009-03-31 | 2015-08-03 | 삼성전자 주식회사 | 발광 장치 |
TWI485879B (zh) * | 2009-04-09 | 2015-05-21 | Lextar Electronics Corp | 發光二極體晶片及其製造方法 |
TWI480962B (zh) | 2009-04-09 | 2015-04-11 | Lextar Electronics Corp | 發光二極體封裝以及發光二極體晶圓級封裝製程 |
KR100986544B1 (ko) * | 2009-06-10 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8110419B2 (en) * | 2009-08-20 | 2012-02-07 | Integrated Photovoltaic, Inc. | Process of manufacturing photovoltaic device |
KR101113692B1 (ko) * | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
JP5526712B2 (ja) * | 2009-11-05 | 2014-06-18 | 豊田合成株式会社 | 半導体発光素子 |
JP5422341B2 (ja) * | 2009-11-10 | 2014-02-19 | スタンレー電気株式会社 | 半導体発光素子およびその製造方法 |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US8071401B2 (en) * | 2009-12-10 | 2011-12-06 | Walsin Lihwa Corporation | Method of forming vertical structure light emitting diode with heat exhaustion structure |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
JP5423390B2 (ja) * | 2009-12-26 | 2014-02-19 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
KR101081135B1 (ko) * | 2010-03-15 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP2011198854A (ja) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | 光電変換膜積層型固体撮像素子及び撮像装置 |
JP2011198853A (ja) * | 2010-03-17 | 2011-10-06 | Fujifilm Corp | マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及びその製造方法並びに撮像装置 |
JP2011233783A (ja) * | 2010-04-28 | 2011-11-17 | Mitsubishi Heavy Ind Ltd | 半導体発光素子、半導体発光素子の保護膜及びその作製方法 |
KR101330250B1 (ko) | 2010-05-14 | 2013-11-15 | 서울바이오시스 주식회사 | 발광 소자 |
US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
US9287452B2 (en) | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
KR101782081B1 (ko) | 2010-08-30 | 2017-09-26 | 엘지이노텍 주식회사 | 발광 소자 |
CN102456778B (zh) * | 2010-10-26 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管芯片制造方法 |
TWI458129B (zh) | 2010-12-21 | 2014-10-21 | Lextar Electronics Corp | 發光二極體晶片結構及其製造方法 |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
JP5723442B2 (ja) * | 2011-05-12 | 2015-05-27 | ビービーエスエイ リミテッドBBSA Limited | Iii族窒化物半導体縦型構造ledチップおよびその製造方法 |
US8436386B2 (en) * | 2011-06-03 | 2013-05-07 | Micron Technology, Inc. | Solid state lighting devices having side reflectivity and associated methods of manufacture |
US8865565B2 (en) | 2011-08-02 | 2014-10-21 | Kabushiki Kaisha Toshiba | LED having a low defect N-type layer that has grown on a silicon substrate |
US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
US8646505B2 (en) | 2011-11-18 | 2014-02-11 | LuxVue Technology Corporation | Micro device transfer head |
US8809875B2 (en) | 2011-11-18 | 2014-08-19 | LuxVue Technology Corporation | Micro light emitting diode |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
KR20130083721A (ko) | 2012-01-13 | 2013-07-23 | 삼성전자주식회사 | 레이저 어블레이션을 이용한 관통 실리콘 비아 형성방법 |
KR101334205B1 (ko) * | 2012-02-07 | 2013-11-29 | 순천대학교 산학협력단 | 멀티 칩 반도체 레이저 다이오드 및 그 제조방법 |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
KR101221642B1 (ko) | 2012-02-28 | 2013-02-05 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
US8952413B2 (en) * | 2012-03-08 | 2015-02-10 | Micron Technology, Inc. | Etched trenches in bond materials for die singulation, and associated systems and methods |
JP5914060B2 (ja) * | 2012-03-09 | 2016-05-11 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
US9847445B2 (en) * | 2012-04-05 | 2017-12-19 | Koninklijke Philips N.V. | LED thin-film device partial singulation prior to substrate thinning or removal |
CN102623592A (zh) * | 2012-04-13 | 2012-08-01 | 杭州士兰明芯科技有限公司 | 一种垂直led芯片及其相应的制作方法 |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
US9034754B2 (en) | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
US8383506B1 (en) | 2012-07-06 | 2013-02-26 | LuxVue Technology Corporation | Method of forming a compliant monopolar micro device transfer head with silicon electrode |
US8415767B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
US8933433B2 (en) | 2012-07-30 | 2015-01-13 | LuxVue Technology Corporation | Method and structure for receiving a micro device |
DE102012107409B4 (de) * | 2012-08-13 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiter-Laserelements |
US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9255001B2 (en) | 2012-12-10 | 2016-02-09 | LuxVue Technology Corporation | Micro device transfer head array with metal electrodes |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9166114B2 (en) | 2012-12-11 | 2015-10-20 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging cavity |
US9105714B2 (en) | 2012-12-11 | 2015-08-11 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging bollards |
US9314930B2 (en) | 2012-12-14 | 2016-04-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
US9391042B2 (en) * | 2012-12-14 | 2016-07-12 | Apple Inc. | Micro device transfer system with pivot mount |
US9153171B2 (en) | 2012-12-17 | 2015-10-06 | LuxVue Technology Corporation | Smart pixel lighting and display microcontroller |
CN103943741A (zh) * | 2013-01-17 | 2014-07-23 | 易美芯光(北京)科技有限公司 | 一种基于激光剥离的半导体发光器件的制备方法 |
US9095980B2 (en) | 2013-02-25 | 2015-08-04 | LuxVue Technology Corporation | Micro pick up array mount with integrated displacement sensor |
US9308649B2 (en) | 2013-02-25 | 2016-04-12 | LuxVue Techonology Corporation | Mass transfer tool manipulator assembly |
US8791474B1 (en) | 2013-03-15 | 2014-07-29 | LuxVue Technology Corporation | Light emitting diode display with redundancy scheme |
US9252375B2 (en) | 2013-03-15 | 2016-02-02 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
US20160329173A1 (en) | 2013-06-12 | 2016-11-10 | Rohinni, LLC | Keyboard backlighting with deposited light-generating sources |
US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
US9548247B2 (en) | 2013-07-22 | 2017-01-17 | Infineon Technologies Austria Ag | Methods for producing semiconductor devices |
US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
US20160190319A1 (en) * | 2013-09-27 | 2016-06-30 | Intel Corporation | Non-Planar Semiconductor Devices having Multi-Layered Compliant Substrates |
CN103606617B (zh) * | 2013-11-08 | 2016-06-29 | 溧阳市江大技术转移中心有限公司 | 具有透明电极的倒装发光二极管 |
CN103594593B (zh) * | 2013-11-08 | 2016-04-06 | 溧阳市江大技术转移中心有限公司 | 具有粗化透明电极的倒装发光二极管的制造方法 |
WO2015084258A1 (en) | 2013-12-02 | 2015-06-11 | Nanyang Technological University | Light-emitting device and method of forming the same |
CN104701447A (zh) * | 2013-12-04 | 2015-06-10 | 旭明光电股份有限公司 | 金属装置的磊晶结构 |
US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
KR101539591B1 (ko) * | 2013-12-23 | 2015-07-28 | 광주과학기술원 | 레이저 차단층을 이용한 발광 다이오드의 전사방법 |
US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
EP3127143A4 (en) * | 2014-03-31 | 2017-11-29 | Nanyang Technological University | Methods of recycling substrates and carrier substrates |
US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
JP6312552B2 (ja) * | 2014-08-07 | 2018-04-18 | シャープ株式会社 | 半導体発光素子の製造方法および半導体発光素子 |
US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
US10516084B2 (en) | 2014-10-31 | 2019-12-24 | eLux, Inc. | Encapsulated fluid assembly emissive elements |
US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
KR102038443B1 (ko) | 2015-03-26 | 2019-10-30 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9793252B2 (en) | 2015-03-30 | 2017-10-17 | Emagin Corporation | Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications |
KR102406606B1 (ko) | 2015-10-08 | 2022-06-09 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이를 포함하는 유기 발광 표시 장치, 및 이의 제조 방법 |
US9997391B2 (en) * | 2015-10-19 | 2018-06-12 | QROMIS, Inc. | Lift off process for chip scale package solid state devices on engineered substrate |
JP6959697B2 (ja) | 2016-01-15 | 2021-11-05 | ロヒンニ リミテッド ライアビリティ カンパニー | 装置上のカバーを介してバックライトで照らす装置及び方法 |
US10644210B2 (en) * | 2016-04-01 | 2020-05-05 | Nichia Corporation | Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member |
TWI646680B (zh) * | 2017-01-10 | 2019-01-01 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體晶片以及顯示面板 |
DE102017108385A1 (de) | 2017-04-20 | 2018-10-25 | Osram Opto Semiconductors Gmbh | Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern |
CN107046085B (zh) * | 2017-04-28 | 2019-09-10 | 华灿光电(浙江)有限公司 | 一种垂直结构发光二极管芯片的制作方法 |
CN107910405B (zh) * | 2017-09-27 | 2019-08-23 | 华灿光电(浙江)有限公司 | 一种发光二极管芯片的制作方法 |
US10586829B2 (en) * | 2018-01-23 | 2020-03-10 | Light Share, LLC | Full-color monolithic micro-LED pixels |
US11469138B2 (en) | 2018-05-04 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for coupling attached component upper electrode to substrate |
US10652963B2 (en) | 2018-05-24 | 2020-05-12 | Lumiode, Inc. | LED display structures and fabrication of same |
CN110544734B (zh) * | 2018-05-29 | 2020-12-11 | 山东浪潮华光光电子股份有限公司 | 一种提高led管芯亮度的无损裂片方法 |
US11342479B2 (en) * | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
JP2022505525A (ja) | 2018-10-24 | 2022-01-14 | ノバルティス アーゲー | Nlrp活性に関連する状態を治療するための化合物及び組成物 |
JP7195700B2 (ja) * | 2018-11-12 | 2022-12-26 | 株式会社ディスコ | リフトオフ方法 |
KR102030323B1 (ko) * | 2018-11-23 | 2019-10-10 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
WO2020131894A1 (en) | 2018-12-21 | 2020-06-25 | Lumiode, Inc. | Addressing for emissive displays |
US11637219B2 (en) * | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
US11605756B2 (en) * | 2019-08-21 | 2023-03-14 | Purdue Research Foundation | Light emitting device and method of making the same |
TWI740212B (zh) * | 2019-09-19 | 2021-09-21 | 國立陽明交通大學 | 微型發光二極體晶片的製作方法 |
US11817535B2 (en) | 2020-04-21 | 2023-11-14 | Raysolve Optoelectronics (Suzhou) Company Limited | Light emitting diode structure and method for manufacturing the same |
CN112054104B (zh) * | 2020-07-30 | 2021-10-08 | 华灿光电(浙江)有限公司 | 发光二极管芯片及其制备方法 |
KR20220055526A (ko) | 2020-10-26 | 2022-05-04 | 삼성디스플레이 주식회사 | 반도체 구조물을 포함하는 적층 구조물 및 이의 제조 방법 |
WO2022217648A1 (en) * | 2021-04-13 | 2022-10-20 | Raysolve Optoelectronics (Suzhou) Co. Ltd. | Light emitting diode structure and method for manufacturing thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304315A (ja) * | 1992-04-27 | 1993-11-16 | Matsushita Electron Corp | 発光素子 |
JPH06302856A (ja) * | 1993-04-16 | 1994-10-28 | Ricoh Co Ltd | 光プリンター光源 |
JP2000106473A (ja) * | 1998-07-29 | 2000-04-11 | Sanyo Electric Co Ltd | 半導体素子、半導体発光素子およびその製造方法ならびに窒化物系半導体層の形成方法 |
JP2001244503A (ja) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
Family Cites Families (133)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6706735A (ja) * | 1967-05-13 | 1968-11-14 | ||
FR2328286A1 (fr) * | 1975-10-14 | 1977-05-13 | Thomson Csf | Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede |
US4210878A (en) * | 1976-01-20 | 1980-07-01 | Nippon Electric Co., Ltd. | Semiconductor laser element having a unitary film on a laser crystal and a heat sink thereof |
US4406052A (en) * | 1981-11-12 | 1983-09-27 | Gte Laboratories Incorporated | Non-epitaxial static induction transistor processing |
JP2953468B2 (ja) * | 1989-06-21 | 1999-09-27 | 三菱化学株式会社 | 化合物半導体装置及びその表面処理加工方法 |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5034068A (en) * | 1990-02-23 | 1991-07-23 | Spectrolab, Inc. | Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
JPH0429374A (ja) * | 1990-05-24 | 1992-01-31 | Omron Corp | 面出射型半導体発光素子およびその作製方法 |
US5281526A (en) * | 1992-10-20 | 1994-01-25 | Solvay Enzymes, Inc. | Method of purification of amylase by precipitation with a metal halide and 4-hydroxybenzic acid or a derivative thereof |
DE4305296C3 (de) * | 1993-02-20 | 1999-07-15 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen einer strahlungsemittierenden Diode |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
DE69425186T3 (de) * | 1993-04-28 | 2005-04-14 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
JP3410166B2 (ja) * | 1993-08-27 | 2003-05-26 | 松下電器産業株式会社 | 赤色発光ダイオード素子 |
JPH07202265A (ja) * | 1993-12-27 | 1995-08-04 | Toyoda Gosei Co Ltd | Iii族窒化物半導体の製造方法 |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
BE1008384A3 (nl) * | 1994-05-24 | 1996-04-02 | Koninkl Philips Electronics Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen met halfgeleiderelementen gevormd in een op een dragerplak aangebrachte laag halfgeleidermateriaal. |
JP3717196B2 (ja) * | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | 発光素子 |
US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5712504A (en) * | 1995-02-02 | 1998-01-27 | Sumitomo Electric Industries, Ltd. | Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JP3259811B2 (ja) * | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JP2940477B2 (ja) * | 1995-08-11 | 1999-08-25 | 株式会社デンソー | 誘電体薄膜と透明導電膜との積層膜および誘電体薄膜を用いた薄膜el素子 |
JP2783210B2 (ja) * | 1995-09-04 | 1998-08-06 | 日本電気株式会社 | 面発光型ダイオード |
AU6946196A (en) * | 1995-09-18 | 1997-04-09 | Hitachi Limited | Semiconductor material, method of producing the semiconductor material, and semiconductor device |
US5784747A (en) * | 1995-11-01 | 1998-07-28 | The Procter & Gamble Company | Cleansing puff |
CN100350641C (zh) * | 1995-11-06 | 2007-11-21 | 日亚化学工业株式会社 | 氮化物半导体器件 |
JP3409958B2 (ja) * | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JP2806423B2 (ja) * | 1996-03-08 | 1998-09-30 | 日本電気株式会社 | 面発光型半導体素子 |
JP3209096B2 (ja) * | 1996-05-21 | 2001-09-17 | 豊田合成株式会社 | 3族窒化物化合物半導体発光素子 |
JP3292044B2 (ja) * | 1996-05-31 | 2002-06-17 | 豊田合成株式会社 | p伝導形3族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法 |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
WO1998019375A1 (fr) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
JPH10150220A (ja) | 1996-11-15 | 1998-06-02 | Toyoda Gosei Co Ltd | 半導体発光素子 |
CA2223167C (en) * | 1996-12-04 | 2004-04-27 | Hitachi, Ltd. | Organic light emitting element and producing method thereof |
CN100485984C (zh) * | 1997-01-09 | 2009-05-06 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
JPH10247747A (ja) * | 1997-03-05 | 1998-09-14 | Toshiba Corp | 半導体発光素子およびその製造方法 |
DE19714582A1 (de) | 1997-04-09 | 1998-10-15 | Bayer Ag | Verfahren zur Herstellung stark basischer Anionenaustauscher mit Ethylenoxid |
US6107647A (en) * | 1997-05-15 | 2000-08-22 | Rohm Co. Ltd. | Semiconductor AlGaInP light emitting device |
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6121552A (en) * | 1997-06-13 | 2000-09-19 | The Regents Of The University Of Caliofornia | Microfabricated high aspect ratio device with an electrical isolation trench |
JP3914615B2 (ja) * | 1997-08-19 | 2007-05-16 | 住友電気工業株式会社 | 半導体発光素子及びその製造方法 |
JPH1168158A (ja) * | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
JP3718329B2 (ja) * | 1997-08-29 | 2005-11-24 | 株式会社東芝 | GaN系化合物半導体発光素子 |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JP3116085B2 (ja) * | 1997-09-16 | 2000-12-11 | 東京農工大学長 | 半導体素子形成法 |
TW393785B (en) * | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
US5972781A (en) * | 1997-09-30 | 1999-10-26 | Siemens Aktiengesellschaft | Method for producing semiconductor chips |
JP3517867B2 (ja) * | 1997-10-10 | 2004-04-12 | 豊田合成株式会社 | GaN系の半導体素子 |
US6335217B1 (en) * | 1997-10-10 | 2002-01-01 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device fabrication |
JP3255281B2 (ja) * | 1997-11-14 | 2002-02-12 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6479839B2 (en) * | 1997-11-18 | 2002-11-12 | Technologies & Devices International, Inc. | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer |
JP3643225B2 (ja) * | 1997-12-03 | 2005-04-27 | ローム株式会社 | 光半導体チップ |
UA66370C2 (en) | 1997-12-16 | 2004-05-17 | Lilly Co Eli | Arylpiperazines having activity to setotonin 1 receptors |
US6172383B1 (en) | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
US6041515A (en) * | 1998-01-12 | 2000-03-28 | Life Technologies, Inc. | Apparatus for drying solutions containing macromolecules |
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JPH11238913A (ja) * | 1998-02-20 | 1999-08-31 | Namiki Precision Jewel Co Ltd | 半導体発光デバイスチップ |
US6078064A (en) * | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
JPH11330552A (ja) | 1998-05-18 | 1999-11-30 | Nichia Chem Ind Ltd | 窒化物半導体発光素子及び発光装置 |
US6218207B1 (en) * | 1998-05-29 | 2001-04-17 | Mitsushita Electronics Corporation | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
JP3287458B2 (ja) * | 1998-06-24 | 2002-06-04 | 日本電気株式会社 | 超高速・低電圧駆動アバランシェ増倍型半導体受光素子 |
JP4352473B2 (ja) * | 1998-06-26 | 2009-10-28 | ソニー株式会社 | 半導体装置の製造方法 |
DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
JP2000049114A (ja) * | 1998-07-30 | 2000-02-18 | Sony Corp | 電極およびその形成方法ならびに半導体装置およびその製造方法 |
JP2000077713A (ja) | 1998-08-27 | 2000-03-14 | Sanyo Electric Co Ltd | 半導体発光素子 |
JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
EP1076388B1 (en) * | 1999-02-26 | 2009-03-11 | The Furukawa Electric Co., Ltd. | Semiconductor laser |
EP1168539B1 (en) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
US6426512B1 (en) * | 1999-03-05 | 2002-07-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
JP3881473B2 (ja) * | 1999-04-30 | 2007-02-14 | ローム株式会社 | 半導体発光素子の製法 |
US6258699B1 (en) * | 1999-05-10 | 2001-07-10 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same |
JP2000323797A (ja) * | 1999-05-10 | 2000-11-24 | Pioneer Electronic Corp | 窒化物半導体レーザ及びその製造方法 |
GB9912583D0 (en) * | 1999-05-28 | 1999-07-28 | Arima Optoelectronics Corp | A light emitting diode having a two well system with asymmetric tunneling |
US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
US6803603B1 (en) * | 1999-06-23 | 2004-10-12 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element |
JP2001053336A (ja) * | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP3609661B2 (ja) * | 1999-08-19 | 2005-01-12 | 株式会社東芝 | 半導体発光素子 |
US6678463B1 (en) * | 2000-08-02 | 2004-01-13 | Opentv | System and method for incorporating previously broadcast content into program recording |
JP2001144321A (ja) * | 1999-11-04 | 2001-05-25 | Shurai Kagi Kofun Yugenkoshi | 発光素子及びその製造方法 |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
JP2001177145A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | 半導体発光素子およびその製造方法 |
US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
JP2001267242A (ja) * | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体及びその製造方法 |
JP4060511B2 (ja) * | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
WO2001082384A1 (de) * | 2000-04-26 | 2001-11-01 | Osram Opto Semiconductors Gmbh | Strahlungsmittierendes halbleiterbauelement und herstellungsverfahren |
US6326294B1 (en) * | 2000-04-27 | 2001-12-04 | Kwangju Institute Of Science And Technology | Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices |
JP4050444B2 (ja) | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | 発光素子及びその製造方法 |
JP4902040B2 (ja) | 2000-06-21 | 2012-03-21 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
JP4816990B2 (ja) * | 2000-08-21 | 2011-11-16 | ソニー株式会社 | 発光素子および半導体素子ならびにそれらの製造方法 |
JP3694224B2 (ja) * | 2000-08-22 | 2005-09-14 | 山洋電気株式会社 | 防水構造を備えた遠心ファン |
US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
US6864628B2 (en) | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
DE10044500A1 (de) * | 2000-09-08 | 2002-04-04 | Highlink Technology Corp Chupe | Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben |
US6858882B2 (en) * | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
US6924594B2 (en) * | 2000-10-03 | 2005-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6936488B2 (en) * | 2000-10-23 | 2005-08-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP4091261B2 (ja) * | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP3889933B2 (ja) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | 半導体発光装置 |
US6555405B2 (en) * | 2001-03-22 | 2003-04-29 | Uni Light Technology, Inc. | Method for forming a semiconductor device having a metal substrate |
US6765232B2 (en) * | 2001-03-27 | 2004-07-20 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
US6746889B1 (en) * | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
JP4101468B2 (ja) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
US7148520B2 (en) * | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
KR100456617B1 (ko) | 2002-01-02 | 2004-11-10 | 주식회사 언어과학 | 축소형 키 어레이를 이용한 중국어 한어 병음 입력 시스템및 입력 방법 |
DE60329576D1 (de) | 2002-01-28 | 2009-11-19 | Nichia Corp | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung |
US6869820B2 (en) * | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
KR100483049B1 (ko) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드의 제조방법 |
US20060175681A1 (en) * | 2005-02-08 | 2006-08-10 | Jing Li | Method to grow III-nitride materials using no buffer layer |
JP2007005591A (ja) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | 半導体発光素子 |
JP4895587B2 (ja) * | 2005-11-29 | 2012-03-14 | ローム株式会社 | 窒化物半導体発光素子 |
US8187900B2 (en) | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
US8653542B2 (en) | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US9601659B2 (en) | 2015-01-06 | 2017-03-21 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
-
2002
- 2002-04-09 US US10/118,316 patent/US20030189215A1/en not_active Abandoned
-
2003
- 2003-03-31 JP JP2003585153A patent/JP5325365B2/ja not_active Expired - Fee Related
- 2003-03-31 EP EP10183495.0A patent/EP2261950B1/en not_active Expired - Lifetime
- 2003-03-31 AU AU2003241280A patent/AU2003241280A1/en not_active Abandoned
- 2003-03-31 WO PCT/US2003/009501 patent/WO2003088318A2/en active Application Filing
- 2003-03-31 AT AT03731009T patent/ATE412972T1/de not_active IP Right Cessation
- 2003-03-31 DE DE20321880U patent/DE20321880U1/de not_active Expired - Lifetime
- 2003-03-31 EP EP07013949.8A patent/EP1848026B1/en not_active Expired - Lifetime
- 2003-03-31 EP EP10183510.6A patent/EP2261951B1/en not_active Expired - Lifetime
- 2003-03-31 EP EP14194349.8A patent/EP2860753B1/en not_active Expired - Lifetime
- 2003-03-31 EP EP10183473.7A patent/EP2261949B1/en not_active Expired - Lifetime
- 2003-03-31 DE DE60324413T patent/DE60324413D1/de not_active Expired - Lifetime
- 2003-03-31 KR KR1020047016177A patent/KR100921457B1/ko active IP Right Grant
- 2003-03-31 EP EP14194354.8A patent/EP2860779B1/en not_active Expired - Lifetime
- 2003-03-31 DE DE20321881U patent/DE20321881U1/de not_active Expired - Lifetime
- 2003-03-31 EP EP14194356.3A patent/EP2863444B1/en not_active Expired - Lifetime
- 2003-03-31 EP EP03731009A patent/EP1502286B1/en not_active Expired - Lifetime
-
2004
- 2004-12-03 US US11/002,413 patent/US7569865B2/en not_active Expired - Lifetime
-
2005
- 2005-01-07 US US11/030,323 patent/US7588952B2/en not_active Expired - Lifetime
- 2005-09-23 US US11/232,956 patent/US7250638B2/en not_active Expired - Lifetime
- 2005-09-23 US US11/232,957 patent/US7563629B2/en not_active Expired - Lifetime
-
2007
- 2007-08-30 US US11/896,307 patent/US7462881B2/en not_active Expired - Lifetime
- 2007-09-05 US US11/896,772 patent/US7576368B2/en not_active Expired - Lifetime
-
2009
- 2009-07-21 US US12/458,703 patent/US7816705B2/en not_active Expired - Fee Related
-
2010
- 2010-06-09 US US12/797,335 patent/US7928465B2/en not_active Expired - Fee Related
-
2011
- 2011-03-14 US US13/047,371 patent/US8384120B2/en not_active Expired - Lifetime
-
2013
- 2013-01-25 US US13/750,376 patent/US8809898B2/en not_active Expired - Lifetime
- 2013-04-03 JP JP2013077709A patent/JP2013175748A/ja active Pending
- 2013-12-05 US US14/098,185 patent/US8896017B2/en not_active Expired - Fee Related
-
2014
- 2014-09-25 US US14/496,076 patent/US9224907B2/en not_active Expired - Fee Related
-
2015
- 2015-04-02 JP JP2015076060A patent/JP6546432B2/ja not_active Expired - Lifetime
- 2015-11-24 US US14/950,773 patent/US9472727B2/en not_active Expired - Lifetime
-
2016
- 2016-09-09 US US15/261,172 patent/US9882084B2/en not_active Expired - Lifetime
- 2016-10-24 JP JP2016208006A patent/JP6268259B2/ja not_active Expired - Fee Related
-
2017
- 2017-12-04 US US15/831,084 patent/US10243101B2/en not_active Expired - Fee Related
-
2018
- 2018-09-10 JP JP2018168460A patent/JP6547047B2/ja not_active Expired - Lifetime
-
2019
- 2019-02-05 US US16/268,161 patent/US10461217B2/en not_active Expired - Fee Related
- 2019-04-17 US US16/387,312 patent/US10453993B1/en not_active Expired - Fee Related
- 2019-09-11 US US16/567,875 patent/US10600933B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304315A (ja) * | 1992-04-27 | 1993-11-16 | Matsushita Electron Corp | 発光素子 |
JPH06302856A (ja) * | 1993-04-16 | 1994-10-28 | Ricoh Co Ltd | 光プリンター光源 |
JP2000106473A (ja) * | 1998-07-29 | 2000-04-11 | Sanyo Electric Co Ltd | 半導体素子、半導体発光素子およびその製造方法ならびに窒化物系半導体層の形成方法 |
JP2001244503A (ja) * | 1999-12-21 | 2001-09-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
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