TWI740212B - 微型發光二極體晶片的製作方法 - Google Patents

微型發光二極體晶片的製作方法 Download PDF

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TWI740212B
TWI740212B TW108133864A TW108133864A TWI740212B TW I740212 B TWI740212 B TW I740212B TW 108133864 A TW108133864 A TW 108133864A TW 108133864 A TW108133864 A TW 108133864A TW I740212 B TWI740212 B TW I740212B
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metal substrate
emitting diode
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洪瑞華
馮祥銨
鍾承育
涂家瑋
澹台富國
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國立陽明交通大學
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Abstract

本發明提供一種微型發光二極體晶片的製作方法，包含一提供步驟，提供一待切割發光元件，該切割發光元件具有一金屬基板、以及多個藉由一溝槽而彼此間隔設置於該金屬基板表面的微型發光二極體晶粒，及一分離步驟，利用蝕刻方式將自該溝槽裸露的該金屬基板移除，而得到多個彼此分離的微型發光二極體晶片。

Description

微型發光二極體晶片的製作方法
本發明是有關於一種發光二極體晶片的製作方法，特別是指一種微型發光二極體晶片的製作方法。
微型發光二極體是將傳統LED尺寸微縮至100微米以下，具有自發光、低功耗、高亮度、壽命長等良好的光電特性，近年來隨著發光二極體的應用領域越來越廣泛，微型發光二極體(Micro Light Emitting Diode，Micro LED)更是業界亟欲發展之重點。
就傳統LED的製程而言，一般是先在一磊晶基板進行發光磊晶膜的成長，而後續為了減少出光被原生磊晶基板所吸收，以及改善LED散熱，因此，會把發光磊晶膜從原生的磊晶基板轉移到具反射鏡面且具有較高散熱性的散熱基板，如金屬基板或矽基板後，再於該散熱基板形成多個微型發光二極體晶片，之後，再經由例如機械或雷射的方式切割基板，將該等微型發光二極體晶片分離，再將各個微型發光二極體晶片逐一轉移至另一應用基板。
然而，當傳統的發光二極體晶粒尺寸縮減至微型發光二極體(>100微米)時，因為晶粒間的距離變得更微細，因此，以機械方式進行基板切割而達成微型發光二極體晶片分離的方式，不僅製程難度提升且切割的良率不佳，而，利用雷射切割方式分離晶片也因為被切割的金屬基板因為間距過小而容易再回黏，使得切割良率降低。
因此，本發明之目的，即在提供一種利用蝕刻切割方式製作微型發光二極體晶片的方法。
於是，本發明包含一提供步驟，及一分離步驟。
該提供步驟是提供一待切割發光元件，該待切割發光元件具有一金屬基板、以及多個藉由一溝槽而彼此間隔設置於該金屬基板表面的微型發光二極體晶粒。
該分離步驟是利用蝕刻方式將自該溝槽裸露的該金屬基板移除，而得到多個彼此分離的微型發光二極體晶片。
本發明之功效在於：藉由蝕刻方式蝕刻移除金屬基板未被微型發光二極體晶粒覆蓋的區域，得到彼此分離的微型發光二極體晶片，而可避免習知利用機械或雷射切割，所造成的切割良率不佳的問題。
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
配合參閱圖1、2，本發明微型發光二極體晶片的製作方法的一第一實施例包含以下步驟。
首先，進行提供步驟51，提供一待切割發光元件2，該待切割發光元件2具有一金屬基板21、以及多個藉由一溝槽23而彼此間隔設置於該金屬基板21表面的微型發光二極體晶粒22。
該金屬基板21為一用於承載自一原生磊晶基板轉移之微型發光二極體晶粒22的永久基板，具有一平坦的表面。可選自銅，或是具磁性的銅/鎳鐵/銅(Copper/Invar/Copper/，CIC)複合材料構成。其中，Invar為鎳鐵合金(36%鎳，其餘成分為鐵)。
該等微型發光二極體晶粒22為微型發光二極體(Micro LED，晶粒尺寸約小於100微米(μm)。且每一個微型發光二極體晶粒22具有一連接於該金屬基板21表面的發光磊晶層221，及一上電極222。其中，該等微型發光二極體晶粒22是藉由晶圓接合(wafer bonding)技術而與該金屬基板21的表面連接。
該發光磊晶層221由半導體材料構成，可於接收電能時以光電效應發出至少一種預定光色(如紅色、藍色、綠色)，該半導體材料例如但不限於氮化鎵系列(GaN)、磷化鋁鎵銦(AlGaInP) 系列。該上電極222由導電性佳的金屬或合金金屬為材料構成，設置於該發光磊晶層221遠離該金屬基板21的表面，與該發光磊晶層221電性連接，用於提供電能至該發光磊晶層221。
於一些實施例中，該金屬基板21為CIC基板，厚度小於100微米(μm)，於另一些實施例中，該金屬基板21為CIC基板，且厚度可小於50微米(μm)。
具體的說，前述該提供步驟51的該待切割發光元件2是利用半導體製程，於一用於磊晶的原生基板上成長一或多層具有可發出至少一種預定光色的發光磊晶膜，接著，將該發光磊晶膜藉由晶圓接合(wafer bonding)技術轉移並連接至該金屬基板21，接著移除該原生基板。然後，利用金屬沉積方式於該發光磊晶膜遠離該金屬基板21的表面形成多個彼此分隔的上電極222，得到一發光元件半成品。接著，利用化學蝕刻製程自該發光磊晶膜表面向下移除部分的該發光磊晶膜至令該金屬基板21表面露出以形成該溝槽23，令該發光磊晶膜形成多個彼此間隔的發光膜塊，其中，該等發光膜塊即為該等發光磊晶層221，且每一個發光磊晶層221的頂面對應具有一個上電極222，於該金屬基板21上形成該等微型發光二極體晶粒22，而得到該待切割發光元件2。
接著，進行分離步驟52，先於該等微型發光二極體晶粒22遠離該金屬基板21的表面黏貼一離形膠層201，及於該金屬基板21反向該等微型發光二極體晶粒22的表面，形成一對應遮覆該等微型發光二極體晶粒32的圖案化的光阻層202。該離形膠層201可作為後續暫時黏接製得之微型發光二極體晶片3的暫時基板，可選自照光或加熱可解黏性的高分子材料，如藍膜(blue tape)或聚醯亞胺薄膜(PI film)等。
然後，利用濕蝕刻方式將該金屬基板21自該溝槽23裸露且未被該光阻層202覆蓋的區域全部移除，最後再將該光阻層202移除，即可得到各自分離的發光二極體晶片3。其中，經蝕刻後連接於相應的該發光磊晶層221的金屬基板21，即可作為該發光二極體晶片3的下電極223，而可與該上電極222相互配合提供電能至該發光磊晶層321。由於該發光磊晶層221，及該上、下電極222、223的相關材料、製程，及製程參數選擇為本技術領域者所周知，因此，不再多加贅述。
由於經蝕刻分隔後的該等發光二極體晶片3為黏貼於該離形膠層201，因此，該等發光二極體晶片3後續即可透過對該離型膠層201進行局部或全面的照光或加熱，而將部分或全部的發光二極體晶片3轉移至一具控制電路的應用基板，以供應用於不同用途。
參閱圖3，本發明微型發光二極體晶片的製作方法的一第二實施例，其實施步驟與該第一實施例大致相同，不同處在於該第二實施例的該提供步驟51中提供的該待切割發光元件2的溝槽23會貫穿該發光磊晶層221並對應延伸至部分的該金屬基板21且不貫通該金屬基板21，而於該金屬基板21對應形成凹槽。由於該金屬基板21於對應溝槽23位置已形成該具有預定深度D的凹槽，因此，該分離步驟52則僅需於該等微型發光二極體晶粒22遠離該金屬基板21的表面黏貼該離形膠層201而無須形成該光阻層202，即可利用濕蝕刻方式蝕刻該金屬基板21，將自該溝槽23裸露及位於該溝槽23區域外的該金屬基板21移除，而得到各自分離的該等發光二極體晶片3。以此方式利用預先形成於該金屬基板21的凹槽作為蝕刻停止結構，而減少對該金屬基板21蝕刻的深度，且於蝕刻後還可進一步將該金屬基板21薄化至與該凹槽的深度D相當。例如，以該金屬基板21是Cu/Invar/Cu複合基板且每一膜層的厚度(μm)為10/30/10為例。該提供步驟51中於該金屬基板21形成的凹槽深度D可以是30μm，因此，經過該分離步驟52蝕刻後的該金屬基板21的厚度則可由原來的50μm減薄至30μm。
利用該凹槽的深度D調整，可控制對該金屬基板21的蝕刻，而於蝕刻後形成不同厚度。
於一些實施例中，該溝槽23對應延伸至該金屬基板21的凹槽的深度D可大於最終形成之微型發光二極體晶片3的下電極223(即蝕刻後殘留的金屬基板21)的厚度。
於一些實施例中，該金屬基板21為多層(n層)金屬複合基板，該溝槽23對應延伸至該金屬基板21的凹槽的深度D可大於該金屬基板21的第(n-1)層的厚度總和，如此一來蝕刻時僅需移除最表層之金屬，即可令該等微型發光二極體晶粒22分離。
參閱圖4，本發明微型發光二極體晶片的製作方法的一第三實施例，其實施步驟與該第一實施例大致相同，不同處在於該第三實施例的該提供步驟51中提供的該待切割發光元件2的微型發光二極體晶粒22在遠離該金屬基板21的表面會形成一光阻層202，該分離步驟52則是於該金屬基板21反向該等微型發光二極體晶粒22的表面黏貼該離形膠層201。如此，經由蝕刻後也可得到彼此分離且黏接在該離形膠層201的發光二極體晶片3。之後，再將該光阻層202自該等發光二極體晶片3表面移除，即可利用照光或加熱等方式令該等發光二極體晶片3自該離形膠層201脫離，而將該等發光二極體晶片3轉移至一具控制電路的應用基板，而供應用於不同用途。
綜上所述，本發明利用蝕刻方式蝕刻移除金屬基板21未被微型發光二極體晶粒22覆蓋的區域，而可得到彼此分離的發光二極體晶片3，不僅製程簡易容易控制，還可避免習知利用機械或雷射切割金屬基板，所造成的切割良率不佳的問題，而可達成本發明之目的。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
2:待切割發光元件 21:金屬基板 22:微型發光二極體晶粒 221:發光磊晶層 222:上電極 223:下電極 23:溝槽 3:微型發光二極體晶片 51:提供步驟 52:分離步驟 201:離形膠層 202:光阻層
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一文字流程圖，說明本發明微型發光二極體晶片的製作方法的一第一實施例； 圖2是一流程示意圖，輔助說明本發明該實施例； 圖3是一流程示意圖，說明本發明微型發光二極體晶片的製作方法的一第二實施例；及 圖4是一流程示意圖，說明本發明微型發光二極體晶片的製作方法的一第三實施例。
2:待切割發光元件
21:金屬基板
22:微型發光二極體晶粒
221:發光磊晶層
222:上電極
223:下電極
23:溝槽
3:微型發光二極體晶片
201:離形膠層
202:光阻層

Claims (9)

  1. 一種微型發光二極體晶片的製作方法，包含：一提供步驟，提供一待切割發光元件，該待切割發光元件具有一金屬基板，以及多個藉由一溝槽而彼此間隔設置於該金屬基板表面的微型發光二極體晶粒，其中，該待切割發光元件是先準備一發光元件半成品，該發光元件半成品具有一金屬基板、一形成於該金屬表面且成連續狀的發光磊晶膜，及多個間隔設置於該發光磊晶膜遠離該金屬基板之表面的頂電極，自該發光磊晶膜表面向下移除部分的該發光磊晶膜至令該金屬基板表面露出以形成該溝槽，並讓該發光磊晶膜形成多個藉由該溝槽彼此間隔的發光磊晶層，且該每一個發光磊晶層的頂面具有一個頂電極，而於該金屬基板上形成該等微型發光二極體晶粒，以得到該待切割發光元件；及一分離步驟，先於該等微型發光二極體晶粒遠離該金屬基板的表面設置一離形膠層，再利用濕蝕刻製程方式將自該溝槽裸露的該金屬基板移除，而得到多個彼此分離的微型發光二極體晶片，且該等微型發光二極體晶片黏貼於該離形膠層。
  2. 如請求項1所述微型發光二極體晶片的製作方法，其中，該分離步驟的濕蝕刻製程是於該金屬基板反向該等微型發光二極體晶片的表面對應該等微型發光二極體晶片的位置形成一圖案化光阻層，再利用蝕刻液蝕刻移除自該溝槽裸露以及未被該圖案化光阻層覆蓋的該金屬基板，最後，將該 圖案化光阻層移除，即可得到該等微型發光二極體晶片。
  3. 如請求項1所述微型發光二極體晶片的製作方法，其中，該溝槽貫穿該發光磊晶膜並對應延伸至部分的該金屬基板且不貫通該金屬基板，該分離步驟是先於該等微型發光二極體晶粒遠離該金屬基板的表面設置一離形膠層，再利用濕蝕刻方式將自該溝槽裸露的該金屬基板移除，而得到該等微型發光二極體晶片，且該等微型發光二極體晶片黏貼於該離形膠層。
  4. 一種微型發光二極體晶片的製作方法，包含，一提供步驟，提供一待切割發光元件，該待切割發光元件具有一金屬基板、多個藉由一溝槽而彼此間隔設置於該金屬基板表面的微型發光二極體晶粒，及一對應覆蓋該等微型發光二極體晶粒遠離該金屬基板的表面的光阻層；及一分離步驟，該分離步驟是先於該金屬基板遠離該等微型發光二極體晶粒的表面設置一離形膠層，再利用濕蝕刻製程方式將自該溝槽裸露的該金屬基板移除，而得到該等微型發光二極體晶片，且該等微型發光二極體晶片黏貼於該離形膠層。
  5. 如請求項1、4其中任一項所述微型發光二極體晶片的製作方法，其中，該離形膠層是選自照光或加熱可解黏的高分子材料。
  6. 一種微型發光二極體晶片的製作方法，包含：一提供步驟，提供一待切割發光元件，該待切割發光元件具有一金屬基板、以及多個藉由一溝槽而彼此間隔設置於該金屬基板表面的微型發光二極體晶粒，其中，該金屬基板選自多層金 屬的複合材料，且厚度小於100微米；及一分離步驟，利用蝕刻方式將自該溝槽裸露的該金屬基板移除，而得到多個彼此分離的微型發光二極體晶片。
  7. 如請求項6所述微型發光二極體晶片的製作方法，其中，該多層金屬基板選自銅或銅/鎳鐵合金/銅複合材料，且厚度小於100微米。
  8. 如請求項6所述微型發光二極體晶片的製作方法，其中，該金屬基板的厚度小於50微米。
  9. 如請求項6所述微型發光二極體晶片的製作方法，其中，該溝槽對應延伸至該金屬基板的深度大於殘留於該微型發光二極體晶片之金屬基板的厚度。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201637247A (zh) * 2011-04-14 2016-10-16 日東電工股份有限公司 發光元件轉印片材之製造方法、發光裝置之製造方法、發光元件轉印片材及發光裝置
US20160380151A1 (en) * 2002-04-09 2016-12-29 Lg Innotek Co., Ltd. Vertical structure leds
TW201820395A (zh) * 2016-11-03 2018-06-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW357429B (en) 1997-11-25 1999-05-01 Vanguard Int Semiconduct Corp Improvement of quality by means of forming capacitors by means of dua crystalline semi-spherical chip back etching
TW463394B (en) 2000-12-19 2001-11-11 Taiwan Oasis Technology Co Ltd Chip-type light emitting diode and its manufacturing method
JP4097510B2 (ja) * 2002-11-20 2008-06-11 株式会社沖データ 半導体装置の製造方法
JP4534984B2 (ja) 2003-01-17 2010-09-01 凸版印刷株式会社 金属フォトエッチング製品の製造方法
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
KR101428719B1 (ko) * 2008-05-22 2014-08-12 삼성전자 주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치
TWI398022B (zh) 2010-03-17 2013-06-01 Univ Nat Chunghsing Separation method of epitaxial substrate of photovoltaic element
JP6242776B2 (ja) 2014-09-26 2017-12-06 富士フイルム株式会社 保護膜組成物、半導体装置の製造方法およびレーザーダイシング方法
JP6494254B2 (ja) 2014-11-18 2019-04-03 関東化學株式会社 銅、モリブデン金属積層膜エッチング液組成物、該組成物を用いたエッチング方法および該組成物の寿命を延ばす方法
WO2016102922A1 (en) 2014-12-23 2016-06-30 Cirrus Logic International Semiconductor Limited Mems transducer package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160380151A1 (en) * 2002-04-09 2016-12-29 Lg Innotek Co., Ltd. Vertical structure leds
TW201637247A (zh) * 2011-04-14 2016-10-16 日東電工股份有限公司 發光元件轉印片材之製造方法、發光裝置之製造方法、發光元件轉印片材及發光裝置
TW201820395A (zh) * 2016-11-03 2018-06-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

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