JP2019110338A - 光学エレメントとリフレクタを用いた発光デバイス - Google Patents
光学エレメントとリフレクタを用いた発光デバイス Download PDFInfo
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- JP2019110338A JP2019110338A JP2019059628A JP2019059628A JP2019110338A JP 2019110338 A JP2019110338 A JP 2019110338A JP 2019059628 A JP2019059628 A JP 2019059628A JP 2019059628 A JP2019059628 A JP 2019059628A JP 2019110338 A JP2019110338 A JP 2019110338A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 239000011888 foil Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 82
- 239000010410 layer Substances 0.000 description 62
- 239000002245 particle Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000012778 molding material Substances 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000012780 transparent material Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- -1 for example Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011325 microbead Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
42 レンズ
44 成長サブストレート
46 半導体構造体
50 接点
60 リフレクタ
Claims (12)
- サブストレートの上に反射性フォイルを配置するステップであり、前記反射性フォイルは開口を有する、ステップと、
前記サブストレートの上に半導体発光デバイスを配置するステップであり、前記半導体発光デバイスは、前記反射性フォイルの前記開口の中に配置されている、ステップと
前記半導体発光デバイスの上に光学エレメントを形成するステップであり、前記反射性フォイルが前記光学エレメントのベースの全長と接触する、ステップと、
前記サブストレートから前記半導体発光デバイスを取り外すステップと、
を含む、
方法。 - 前記半導体発光デバイスの上に光学エレメントを形成するステップは、
前記開口の中に前記半導体発光デバイスを配置した後で、前記半導体発光デバイスの上にレンズをモールドするステップ、を含む、
請求項1に記載の方法。 - 前記半導体発光デバイスは、前記光学エレメントにおけるリセスの中に配置されている、
請求項1に記載の方法。 - 前記方法は、さらに、
前記半導体発光デバイスの上に波長変換レイヤをラミネートするステップ、
を含む、請求項1に記載の方法。 - 前記波長変換レイヤは、前記半導体発光デバイスの上面および少なくとも一つの側面をカバーする、
請求項4に記載の方法。 - 前記サブストレートの上に反射性フォイルを配置するステップは、
前記サブストレートの上に金属フォイルをロール貼り合わせするステップ、を含む、
請求項1に記載の方法。 - 前記方法は、さらに、
前記ロール貼り合わせするステップの以前に、前記開口を形成するステップ、を含む、
請求項6に記載の方法。 - 前記方法は、さらに、
前記サブストレートの上に反射性フォイルを配置するステップの以前に、前記開口を形成するステップ、を含む、
請求項1に記載の方法。 - 前記方法は、さらに、
前記サブストレートの上に反射性フォイルを配置するステップの以前に、前記開口を形成するステップ、を含む、
請求項1に記載の方法。 - 前記反射性フォイルの厚さは、0.1ミクロンと30ミクロンとの間である、
請求項1に記載の方法。 - 前記方法は、さらに、
前記反射性フォイルをパンチングすることによって、前記開口を成形するステップ、を含む、
請求項1に記載の方法。 - 前記方法は、さらに、
前記反射性フォイルを切断することによって、前記開口を成形するステップ、を含む、
請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361823419P | 2013-05-15 | 2013-05-15 | |
US61/823,419 | 2013-05-15 |
Related Parent Applications (1)
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JP2016513485A Division JP2016518033A (ja) | 2013-05-15 | 2014-05-15 | 光学エレメントとリフレクタを用いた発光デバイス |
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JP2019110338A true JP2019110338A (ja) | 2019-07-04 |
JP7059222B2 JP7059222B2 (ja) | 2022-04-25 |
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JP2016513485A Ceased JP2016518033A (ja) | 2013-05-15 | 2014-05-15 | 光学エレメントとリフレクタを用いた発光デバイス |
JP2019059628A Active JP7059222B2 (ja) | 2013-05-15 | 2019-03-27 | 光学エレメントとリフレクタを用いた発光デバイス |
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JP2016513485A Ceased JP2016518033A (ja) | 2013-05-15 | 2014-05-15 | 光学エレメントとリフレクタを用いた発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US10199549B2 (ja) |
EP (1) | EP2997610B1 (ja) |
JP (2) | JP2016518033A (ja) |
KR (1) | KR102237304B1 (ja) |
CN (1) | CN105393373B (ja) |
WO (1) | WO2014184757A1 (ja) |
Families Citing this family (15)
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US9508907B2 (en) * | 2014-09-15 | 2016-11-29 | Koninklijke Philips N.V. | Light emitting device on a mount with a reflective layer |
USRE49869E1 (en) * | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
TWI565102B (zh) * | 2015-04-29 | 2017-01-01 | 隆達電子股份有限公司 | 發光二極體模組及使用該發光二極體模組的燈具 |
DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
WO2017048825A1 (en) * | 2015-09-14 | 2017-03-23 | Ernest Lee | Local quantum dot optics |
WO2017062116A1 (en) * | 2015-10-07 | 2017-04-13 | Koninklijke Philips N.V. | Reflective coating for flip-chip chip-scale package leds improved package efficiency |
JP2017076673A (ja) * | 2015-10-13 | 2017-04-20 | 豊田合成株式会社 | 発光装置の製造方法 |
US10403792B2 (en) | 2016-03-07 | 2019-09-03 | Rayvio Corporation | Package for ultraviolet emitting devices |
US20180006203A1 (en) * | 2016-07-01 | 2018-01-04 | Rayvio Corporation | Ultraviolet emitting device |
JP6955135B2 (ja) | 2016-10-19 | 2021-10-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
KR102652087B1 (ko) * | 2016-12-16 | 2024-03-28 | 삼성전자주식회사 | 반도체 발광소자 |
DE102017116050B4 (de) | 2017-07-17 | 2024-05-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
DE102017120385B4 (de) | 2017-09-05 | 2024-02-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements |
DE102018205381A1 (de) * | 2018-04-10 | 2019-10-10 | Ibeo Automotive Systems GmbH | LIDAR Messsystem mit Wellenlängenumwandlung |
GB2594998A (en) * | 2020-05-15 | 2021-11-17 | Ams Sensors Asia Pte Ltd | Wafer level chip scale packaging |
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2014
- 2014-05-15 KR KR1020157035375A patent/KR102237304B1/ko active IP Right Grant
- 2014-05-15 WO PCT/IB2014/061448 patent/WO2014184757A1/en active Application Filing
- 2014-05-15 CN CN201480040421.5A patent/CN105393373B/zh active Active
- 2014-05-15 JP JP2016513485A patent/JP2016518033A/ja not_active Ceased
- 2014-05-15 EP EP14729051.4A patent/EP2997610B1/en active Active
- 2014-05-15 US US14/891,332 patent/US10199549B2/en active Active
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2019
- 2019-03-27 JP JP2019059628A patent/JP7059222B2/ja active Active
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Also Published As
Publication number | Publication date |
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KR20160010525A (ko) | 2016-01-27 |
US20160087174A1 (en) | 2016-03-24 |
EP2997610A1 (en) | 2016-03-23 |
JP2016518033A (ja) | 2016-06-20 |
EP2997610B1 (en) | 2019-04-03 |
CN105393373A (zh) | 2016-03-09 |
US10199549B2 (en) | 2019-02-05 |
WO2014184757A1 (en) | 2014-11-20 |
CN105393373B (zh) | 2020-10-16 |
JP7059222B2 (ja) | 2022-04-25 |
KR102237304B1 (ko) | 2021-04-07 |
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