CN103562988B - 用于提取amoled显示器中阈值和迁移率参数的系统和方法 - Google Patents
用于提取amoled显示器中阈值和迁移率参数的系统和方法 Download PDFInfo
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Abstract
本发明公开了一种用于改善AMOLED显示器中晶体管和OLED参数的提取以补偿编程电压从而提高图像质量的系统和方法。像素电路包括:有机发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、用于提供编程信号的编程输入和用于储存所述编程信号的储存装置。电荷泵放大器具有电流输入和电压输出。所述电荷泵放大器包括呈负反馈结构的运算放大器。所述反馈由连接在所述运算放大器的输出与反相输入之间的电容器提供。共模电压源驱动所述运算放大器的非反相输入。电子开关跨接在电容器上以重置所述电容器。
Description
版权
本专利文件的部分公开内容包含受版权保护的材料。版权所有人不反对任何人按照本专利公开在美国专利和商标局的专利文档或记录中所呈现的形式对本专利公开进行复制,但是无论如何都保留所有版权。
技术领域
本发明一般地涉及一种有源矩阵有机发光器件(AMOLED)显示器,具体地涉及从用于这种显示器的像素驱动器提取阈值和迁移因数。
背景技术
目前,正引入一种有源矩阵有机发光器件(“AMOLED”)显示器。这种显示器和传统液晶显示器相比的优点包括低功耗、制造灵活以及刷新速率更快。与传统液晶显示器相比,AMOLED显示器无背光,因此各个像素由独立发光的不同颜色的OLED组成。OLED基于通过驱动晶体管提供的电流而发光,该驱动晶体管由编程电压控制。各个像素的功耗与该像素中产生的光的大小有关。
基于OLED的像素中的输出质量受到驱动晶体管以及OLED本身的性能的影响,驱动晶体管通常由包括但不限于非晶硅、多晶硅或金属氧化物等的材料制成。尤其,随着像素的老化,驱动晶体管的阈值电压和迁移率均会改变。为了保持图像质量,这些参数发生的变化必须通过调整编程电压来进行补偿。为了实施该过程,这些参数必须从驱动电路中提取出来。为提取简单驱动电路中的这些参数而增加的元件要求在显示器基板上为该驱动电路要有更多的空间,因此也就减少了从OLED进行发光的孔径或面积的大小。
当偏置在饱和时,薄膜驱动晶体管的I-V特性取决于迁移率和阈值电压,该迁移率和阈值电压是用于制造晶体管的材料的函数。因此,受老化和迁移率和阈值电压的工艺偏差的影响,在整个显示器面板上设置的不同薄膜晶体管器件可能会呈现出不一致的行为。于是,对于恒定的电压,各个器件可具有不同的漏极电流。在极端的示例中,一个器件可具有低阈值电压和低迁移率,而相比之下,第二个器件可具有高阈值电压和高迁移率。
因此,当仅有很少的电子元件可用于保持所需的孔径时,提取驱动TFT和OLED的非一致性参数(即,阈值电压Vth和迁移率μ)变得具有挑战性。本发明期望以尽可能少的元件提取OLED像素的驱动电路中的这类参数以使像素孔径最大化。
发明内容
本发明的一个示例中公开了一种用于基于有机发光器件(OLED)的显示器的数据提取系统。所述系统包括:像素电路,其包括有机发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、用于提供编程信号的编程输入和用于储存所述编程信号的储存装置。电荷泵放大器具有电流输入和电压输出。所述电荷泵放大器包括呈负反馈结构的运算放大器。所述反馈由连接在所述运算放大器的输出与反相输入之间的电容器提供。共模电压源驱动所述运算放大器的非反相输入。在所述电容器上跨接有电子开关以重置所述电容器。开关模块包括与所述像素电路的输出连接的输入以及与所述电荷泵放大器的输入连接的输出。所述开关模块包括多个电子开关,以用于将电流导入和导出所述像素电路、在所述像素电路与所述电荷泵放大器之间提供放电路径、并使所述电荷泵放大器与所述像素电路隔开。控制器与所述像素电路、所述电荷泵放大器和所述开关模块连接。所述控制器以预定顺序控制施加至所述像素电路、所述电荷泵放大器和所述开关模块的输入信号以产生输出电压值,所述输出电压值是所述像素电路的参数的函数。所述顺序包括向所述编程输入提供编程电压,从而:将所述像素电路的内部电容预充电至一定电荷量,并经由所述开关模块将所述电荷传输至所述电荷泵放大器以生成所述输出电压值;或者通过将来自所述像素电路的电流经由所述开关模块提供至所述电荷泵放大器,以通过在特定时间段内进行积分而生成所述输出电压值。
另一个示例是一种用于从包括有机发光器件的像素电路提取电路参数的方法,所述像素电路包括有机发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、编程输入和用于储存编程信号的储存装置。向所述编程电压输入提供预定编程电压。将所述像素电路的电容充电至一定电荷量或提供来自所述像素电路的电流。使所述像素电路与电荷泵放大器连接。使所述电荷泵放大器与所述像素电路隔开,从而提供一个与所述电荷量成比例的电压输出或者对来自所述像素电路的电流进行积分。读取所述电荷泵放大器的电压输出。从所述电荷泵放大器的电压输出确定至少一个像素电路参数。
另一个示例是一种用于基于有机发光器件(OLED)的显示器的数据提取系统。所述系统包括像素电路,所述像素电路具有驱动晶体管、有机发光器件和与所述驱动晶体管的栅极连接的编程输入。所述驱动晶体管具有连接至所述OLED的源极或漏极。电荷泵放大器具有输入和积分电压输出。开关模块包括与所述像素电路的输出连接的输入和与所述电荷泵放大器的输入连接的输出。所述开关模块包括用于将电流导入和导出所述像素电路、在所述像素电路与所述电荷泵放大器之间提供放电路径、并将所述电荷泵放大器与所述像素电路隔开的开关。控制器与所述像素电路、所述电荷泵放大器和所述开关模块连接。所述控制器以预定顺序控制施加至所述像素电路、所述电荷泵放大器和所述开关模块的电压输入以生成输出电压值,所述输出电压值是所述像素电路的参数的函数。所述顺序包括向所述编程输入提供编程电压,从而:将所述像素电路的电容预充电至一定电荷量,并经由所述开关模块将所述电荷传输至所述电荷泵放大器以生成所述输出电压值,或者,通过将来自所述像素电路的电流经由所述开关模块提供至所述电荷泵放大器,以通过积分而生成所述输出电压值。
对本领域的普通技术人员而言,参照附图对各种实施例和/或方面进行的详细说明,本发明的上述及其它方面和实施例将是显而易见的。下面将对附图进行简要说明。
附图说明
通过阅读下面的详细说明并参照附图,本发明的上述和其它优点将会变得显而易见。
图1是具有补偿控制的AMOLED显示器的方块图。
图2是用于图1所示AMOLED显示器中的二晶体管像素的数据提取电路的电路图;
图3A是施加至数据提取电路以提取图2所示n型驱动晶体管的阈值电压和迁移率的信号的信号时序图;
图3B是施加至数据提取电路以提取图2所示的具有n型驱动晶体管的OLED的特征电压的信号的信号时序图;
图3C是施加至可直接读取的数据提取电路以提取图2所示n型驱动晶体管的阈值电压的信号的信号时序图;
图4A是施加至数据提取电路以提取图2所示p型驱动晶体管的阈值电压和迁移率的信号的信号时序图;
图4B是施加至数据提取电路以提取图2所示的具有p型驱动晶体管的OLED的特征电压的信号的信号时序图;
图4C是施加至可直接读取的数据提取电路以提取图2所示p型驱动晶体管的阈值电压的信号的信号时序图;
图4D是施加至数据提取电路以通过使用图2所示n型或p型驱动晶体管而直接读取OLED的导通电压的信号的信号时序图;
图5是用于图1所示AMOLED显示器中的一个像素的三晶体管驱动电路的数据提取电路从而提取参数的电路图;
图6A是施加至数据提取电路以提取图5所示驱动晶体管的阈值电压和迁移率的信号的信号时序图;
图6B是施加至数据提取电路以提取图5所示OLED的特征电压的信号的信号时序图;
图6C是施加至可直接读取的数据提取电路以提取图5所示驱动晶体管的阈值电压的信号的信号时序图;
图6D是施加至可直接读取的数据提取电路以提取图5所示OLED的特征电压的信号的信号时序图;
图7是读取AMOLED显示器中像素电路的驱动晶体管和OLED的特征的提取周期的流程图;
图8是不同参数提取周期和最终应用的流程图;
图9是数据提取系统的部件的方块图和图表。
尽管本发明可有多种变换和替代形式,但是已通过示例的形式在图中示出了一些具体实施例,并将在本文对这些具体实施例进行详细说明。然而,应理解,本发明并不限于所公开的特定形式。相反,本发明旨在涵盖所有落入所附权利要求限定的本发明精神和范围内的所有变换、等同物和替代物。
具体实施方式
图1是电子显示系统100,该系统100具有像素阵列102的有源矩阵区域,其中,像素104的n×m阵列按行和列的形式布置。为了便于说明,仅示出了两行与两列。像素阵列102的有源矩阵区域之外为外围区域106,用于驱动和控制像素阵列102的外围电路设置在外围区域106中。外围电路包括地址或栅极驱动电路108、数据或源极驱动电路110、控制器112以及可选的供给电压(例如Vdd)驱动器114。控制器112控制栅极、源极和供给电压驱动器108、110和114。栅极驱动器108在控制器112的控制下对地址或选择线SEL[i]、SEL[i+1]等进行操作,该地址或选择线与像素阵列102中各行像素104一一对应。在下面说明的像素共享配置中,栅极或地址驱动电路108也可选择性地对全局选择线GSEL[j]和/[GSEL[j]进行操作,所述全局选择线对像素阵列102的多行像素104(比如每两行像素104)进行操作。源极驱动电路110在控制器112的控制下对电压数据线Vdata[k]和Vdata[k+1]等进行操作,该电压数据线与像素阵列102中各列像素104一一对应。电压数据线将指示像素104中各个发光器件的亮度的电压编程信息传送至各个像素104。各个像素104中的储存元件(比如电容器)储存该电压编程信息,一直到发光或驱动周期导通发光器件为止。可选的供给电压驱动器114在控制器112的控制下控制供给电压(EL_Vdd)线,该供给电压线与像素阵列102中各行或各列像素104一一对应。
显示系统100还包括电流供给和读出电路120,其读出来自数据输出线VD[k]和VD[k+1]等上的输出数据,该数据输出线线与像素阵列102中的各列像素104一一对应。
众所周知,显示系统100中的各个像素104都需要用指示像素104中发光器件的亮度的信息进行编程。帧对时间段进行限定,该时间段包括:(i)编程周期或阶段,在此期间,显示系统100中的每一个像素用指示亮度的编程电压进行编程,以及(ii)驱动或发光周期或阶段,在此期间,各个像素中的各个发光器件导通以发光,光的亮度与储存在储存元件中的编程电压相称。因此,帧是许多静止图像之一,这些静止图像组成一个在显示系统100上显示的完整运动画面。用于编程或驱动像素的方案至少有:逐行或逐帧。在逐行编程中,首先对一行像素进行编程再驱动,然后再对下一行像素进行编程和驱动。在逐帧编程中,首先对显示系统100中所有行的像素进行编程,然后再立即驱动所有行的像素。两种方案都可在各个帧开始或结束时采用短暂的垂直消隐时间,在此期间,像素既没被编程也没被驱动。
位于像素阵列102外面的部件可设置在像素阵列102周围的外围区域106中并与像素阵列102设置在同一物理基板上。这些部件包括栅极驱动器108、源极驱动器110、可选的供给电压驱动器114以及电流供给和读出电路120。或者,外围区域106中的一些部件可与像素阵列102设置在同一基板上,而另一些部件则设置在不同的基板上,或者外围区域中的所有部件都可设置在与设置像素阵列102的基板不同的基板上。栅极驱动器108、源极驱动器110和供给电压驱动器114一起构成显示驱动电路。在一些配置中,显示驱动电路可包括栅极驱动器108和源极驱动器110,但不包括供给电压控制114。
当偏置在饱和时,金属氧化物半导体(MOS)晶体管(本示例中为薄膜晶体管)的第一阶I-V特征建模为:
其中,ID为漏极电流,VGS为施加在晶体管的栅极和源极端子之间的电压差。由于老化和工艺偏差,在整个显示系统100上设置的薄膜晶体管装置在迁移率(μ)和阈值电压(Vth)方面呈现出不一致的行为。因此,对于施加在栅极和源极之间的恒定电压差VGS,像素阵列102上的各个晶体管基于不确定的迁移率和阈值电压可具有不同的漏极电流:
ID(i,j)=f(μi,j,Vthi,j)
其中,i和j为n×m像素阵列中的像素的坐标(行和列),n×m像素阵列例如为图1中的像素阵列102。
图2图示了数据提取系统200,该系统包括二晶体管(2T)驱动电路202和读出电路204。在具有2T像素电路104的显示系统中,供给电压控制114是可选的。如图1所示,读出电路204是电流供给和读出电路120的一部分并从像素104的列中收集数据。读出电路204包括电荷泵电路206和开关盒电路208。电压源210通过该开关盒电路208向驱动电路202提供电源电压。电荷泵电路206和开关盒电路208设置在阵列102的顶侧或底侧,比如设置在图1所示的电压驱动器114中以及电流供给和读出电路120中。这是通过在与像素阵列102相同的基板上进行直接制造或通过将微芯片结合在该基板上或电线(flex)上作为混合解决方案而实现的。
驱动电路202包括驱动晶体管220、有机发光器件222、漏极储存电容器224、源极储存电容器226和选择晶体管228。供给线212提供源极电压以及通往驱动电路(比如驱动电路202)的列的监测路径(用于读出电路204)。选择线输入230连接至选择晶体管228的栅极。编程数据输入232通过选择晶体管228连接至驱动晶体管220的栅极。驱动晶体管220的漏极连接至供给电压线212,驱动晶体管220的源极连接至OLED222。选择晶体管228控制编程数据输入232与驱动晶体管220的栅极的连接。源极储存电容器226连接在驱动晶体管220的栅极和源极之间。漏极储存电容器224连接在驱动晶体管220的栅极和漏极之间。OLED222具有被建模为电容器240的寄生电容。供给电压线212也具有被建模为电容器242的寄生电容。本示例中的驱动晶体管220是由非晶硅制成的薄膜晶体管。当然,也可使用其它比如多晶硅或金属氧化物等材料。节点244为电路节点,在该电路节点处,驱动晶体管220的源极和OLED222的阳极连接在一起。在本示例中,驱动晶体管220为n型晶体管。系统200也可用p型驱动晶体管来代替n型驱动晶体管220,这将在下面进行说明。
读出电路204包括电荷泵电路206和开关盒电路208。电荷泵电路206包括具有正输入和负输入的放大器250。放大器250的负输入连接至与开关254并联的电容器252(Cint),该开关254在负反馈回路中连接至放大器250的输出。开关254(S4)用于使电容器252Cint在预充电阶段放电。放大器250的正输入连接至共模电压输入258(VCM)。放大器250的输出256指示驱动晶体管220和OLED222的多个提取出的参数,这将在下面进行解释。
开关盒电路208包括几个开关260、262和264(S1、S2和S3),所述几个开关用于将电流导入和导出像素驱动电路202。开关260(S1)用于在重置阶段提供通往地面的放电路径。开关262(S2)用于在像素104的正常操作期间并且在读出的积分阶段期间提供电源连接。开关264(S3)用于使电荷泵电路206和供给电压线212(VD)隔开。
如图2所示,用于每一个像素104的二晶体管像素驱动电路202的总体读出想法来自于以下事实:储存在由跨过OLED222的电容器240所表示的寄生电容中的电荷具有驱动晶体管220的阈值电压和迁移率以及OLED222的导通电压的有用信息。提取这些参数可用于多种应用。例如,这些参数可用于修改像素104的编程数据以补偿像素偏差和保持图像质量。这些参数也可用于使像素阵列102预老化。这些参数还可用于评估制造像素阵列102的加工成品率。
假设电容器240(COLED)起初就放了电,那么电容器240(COLED)就需要花费一定时间来充电至能使驱动晶体管220关断的电压电平。该电压电平是驱动晶体管220的阈值电压的函数。施加到编程数据输入232(VData)的电压必须足够低,以使得OLED222(VOLED)的稳定电压(settled voltage)小于OLED222本身的导通阈值电压。在这种条件下,VData-VOLED为驱动晶体管220的阈值电压(Vth)的线性函数。为了提取如驱动晶体管220等薄膜晶体管装置的迁移率,就要考虑到该器件的瞬时稳定性,该瞬时稳定性为阈值电压和迁移率的函数。假设如驱动晶体管220等TFT器件之间的阈值电压偏差得到了补偿,那么在积分开始后以恒定时间间隔采样的节点244的电压仅为如驱动晶体管220等TFT器件的迁移率的函数。
图3A-3C为控制信号的信号时序图,这些控制信号施加至图2所示部件中以从提取电路200中的驱动晶体管220中提取如电压阈值和迁移率等参数并提取OLED222的导通电压,这里假设驱动晶体管220为n型晶体管。这些控制信号可由控制器112施加至图1中的源极驱动器110、栅极驱动器108以及电流供给和读出电路120。图3A示出了施加至提取电路200以从驱动晶体管220提取阈值电压和迁移率的信号的时序图。图3A包括用于图2中的选择输入230的信号302、施加至开关260的信号304(φ1)、用于开关262的信号306(φ2)、用于开关264的信号308(φ3)、用于开关254的信号310(φ4)、用于图2中编程数据输入232的编程电压信号312、图2中节点244的电压314以及用于图2中放大器250的输出256的输出电压信号316。
图3A示出了读出过程的四个阶段:重置阶段320、积分阶段322、预充电阶段324和读取阶段326。该过程通过将高选择信号302作用至选择输入230而开始。选择信号302在如图3A所示的整个读出过程中都将保持为高。
在重置阶段320期间,施加至开关260的输入信号304(φ1)保持高以提供放电路径至地面。在该阶段中,施加至开关262、264和254的信号306、308和310(φ2、φ3、φ4)都保持为低。施加足够高的电平(VRST_TFT)至编程电压输入232(VData)以使流过驱动晶体管220的电流最大化。因此,在图2中的节点244处的电压就放电至地面而为下一周期做准备。
在积分阶段322期间,施加至开关262的信号306(φ2)保持为高,其提供从电压源210通过开关262的充电路径。在该阶段中,施加至开关260、264和254的信号304、308和310(φ1、φ3、φ4)都保持为低。编程电压输入232(VData)设定为电平(VINT_TFT),使得一旦电容器240(Coled)充满电,节点244处的电压就小于OLED222的导通电压。这个条件在读取驱动晶体管220期间会使来自OLED222的干扰最小化。在积分时间马上就要结束之前,施加至编程电压输入232(VData)的信号312降低至VOFF,以使电容器240(Coled)上的电荷与其它电路隔离。
当积分时间足够长时,储存在电容器240(Coled)中的电荷将是驱动晶体管220的阈值电压的函数。对于缩短的积分时间,节点244处的电压将经历不完全的稳定,并且电容器240(Coled)中储存的电荷将是驱动晶体管220的阈值电压和迁移率的函数。因此,便可通过具有长短积分阶段的两个独立读取过程来提取这两个参数。
在预充电阶段324期间,施加至开关260和262的信号304和306(φ1、φ2)设定为低。一旦施加至开关254的输入信号310(φ4)设定为高,那么放大器250便设定为单位反馈(unity feedback)。为了保护放大器250的输出级不受来自电压源210的短路电流的影响,当施加至开关262的信号306(φ2)设定为低时,施加至开关264的信号308(φ3)变为高。当开关264闭合时,供给线的寄生电容242就预充电至共模电压VCM。共模电压VCM为必须低于OLED222的导通电压的电平。在预充电阶段马上就要结束时,施加至开关254的信号310(φ4)设定为低,以使电荷泵放大器250为读取周期做准备。
在读取阶段326期间,施加至开关260、262和254的信号304、306和310(φ1、φ2、φ4)设定为低。施加至开关264的信号308(φ3)保持为高,以提供从驱动电路202至电荷泵放大器250的电荷传输路径。将足够高的电压312(VRD_TFT)施加至编程电压输入232(VData)以使驱动晶体管220的沟道电阻最小化。如果积分周期足够长,那么在电容器252(Cint)上的积累电荷就不是积分时间的函数。因此,本示例中的电荷泵放大器250的输出电压等于:
对于缩短的积分时间,在电容器252(Cint)上积累的电荷由以下公式得出:
因此,电荷泵放大器250的输出电压256在读取周期结束时等于:
因此,驱动晶体管220的阈值电压和迁移率可通过在读取阶段326的中间和结束时读取放大器250的输出电压256来提取。
图3B为图2中OLED222的阈值导通电压参数的读取过程的时序图。OLED222的读取过程也包括四个阶段:重置阶段340、积分阶段342、预充电阶段344和读取阶段346。与图3A中驱动晶体管220的读取过程一样,OLED的读取过程通过用高选择信号302作用于选择输入230来开始。施加至开关260、262、264和254的信号304、306、308和310(φ1、φ2、φ3、φ4)与图3A中驱动晶体管220的读取过程一样。编程输入232的编程信号332、节点244的信号334和放大器250的输出的输出信号336与图3A中的信号有所不同。
在重置阶段340期间,施加足够高的电平332(VRST_OLED)至编程数据输入232(VData)以使流过驱动晶体管220的电流最大化。最后,在图2中的节点244处的电压就通过开关260放电至地面以为下一周期做准备。
在积分阶段342期间,施加至开关262的信号306(φ2)保持为高,其从电压源210通过开关262提供充电路径。编程电压输入232(VData)设定为电平332(VINT_OLED),使得一旦电容器240(Coled)完全充电,节点244处的电压就比OLED222的导通电压大。在这种情况下,到积分阶段342结束时,驱动晶体管220正在驱动恒定电流通过OLED222。
在预充电阶段344期间,驱动晶体管220被施加至编程输入232的信号332关断。电容器240(Coled)可允许放电,直到其在预充电阶段344结束时达到OLED222的导通电压为止。
在读取阶段346期间,施加足够高的电压332(VRD_OLED)至编程电压输入232(VData)以使驱动晶体管220的沟道电阻最小化。如果预充电阶段足够长,那么电容器252(Cint)上的稳定电压将不会是预充电时间的函数。因此,电荷泵放大器250的输出电压256在读取阶段结束时由下式确定:
施加至开关264的信号308(φ3)保持为高,以从驱动电路202至电荷泵放大器250提供电荷传输路径。因此,输出电压信号336可用于确定OLED220的导通电压。
图3C是使用图2中的提取电路200直接读取驱动晶体管220的时序图。直接读取过程具有重置阶段350、预充电阶段352和积分/读取阶段354。读出过程通过使图2中的选择输入230有效来启动。施加至选择输入230的选择信号302在图3C所示的整个读出过程中都保持为高。用于开关260和262的信号364和366(φ1、φ2)在该读出过程中是无效的。
在重置阶段350期间,用于开关264和254的信号368和370(φ3、φ4)设定为高以提供放电路径至虚拟地。施加足够高的电压372(VRST_TFT)至编程输入232(VData)以使流过驱动晶体管220的电流最大化。结果,节点244放电至共模电压374(VCMRST)以为下一周期做准备。
在预充电阶段352期间,通过向图2中的编程输入232施加关断电压372(VOFF)而使得驱动晶体管220关断。施加至放大器250的正输入的共模电压输入258升高至VCMRD以对线路电容进行预充电。在预充电阶段352结束时,施加至开关254的信号370(φ4)关断以使电荷泵放大器250为下一周期做准备。
在读取/积分阶段354开始时,编程电压输入232(VData)升高至VINT_TFT372以导通驱动晶体管220。电容器240(COLED)开始积累电荷,一直到VData减去节点244处的电压等于驱动晶体管220的阈值电压为止。同时,成比例的电荷也积累在电容器252(CINT)中。因此,在读取周期354结束时,在放大器250的输出256处的输出电压376是阈值电压的函数,这由下式得出:
如上式所示,在直接读取的情况下,输出电压具有正极性。因此,驱动晶体管220的阈值电压可由放大器250的输出电压确定。
如上所述,图2中的驱动晶体管220可为p型晶体管。图4A-4C是当驱动晶体管220为p型晶体管时信号的信号时序图,这些信号施加至图2中的部件,以从驱动晶体管220和OLED222提取电压阈值和迁移率。在驱动晶体管220为p型晶体管的示例中,驱动晶体管220的源极连接至供给线212(VD),驱动晶体管220的漏极连接至OLED222。图4A是表示当驱动晶体管220为p型晶体管时施加至提取电路200的信号的时序图,该提取电路200用于从驱动晶体管220提取阈值电压和迁移率。图4A示出了图2中的选择输入232、开关260、262、264和254、编程数据输入230、节点244处的电压以及输出电压256的电压信号402-416。数据提取分三个阶段:重置阶段420、积分/预充电阶段422和读取阶段424。
如图4A所示,选择信号402为低电平有效,且在整个读出阶段420、422和424中都保持为低。在读出过程中,施加至开关260和262的信号404和406(φ1、φ2)保持为低(无效)。在重置阶段期间,在开关264和254处的信号408和410(φ3、φ4)设定为高,以将节点244充电至重置共模电平VCMrst。电荷泵输入258(VCMrst)上的共模电压输入258应足够低以将OLED222保持关断。编程数据输入232(VData)设定为足够低的值412(VRST_TFT),以提供最大充电电流通过驱动晶体管220。
在积分/预充电阶段422期间,共模电压输入258上的共模电压减小至VCMint,且编程输入232(VData)增加至电平412(VINT_TFT),以使得驱动晶体管220在反向上导通。如果分配给该阶段的时间足够长,节点244处的电压将降低,直到驱动晶体管220的栅源电压达到驱动晶体管220的阈值电压为止。在该阶段结束之前,施加至开关254的信号410(φ4)变低,以使电荷泵放大器250为读取阶段424作准备。
通过将编程输入232(VData)处的信号412减小至VRD_TFT而导通驱动晶体管220,从而启动读取阶段424。储存在电容器240(COLED)上的电荷现在传输至电容器254(CINT)。在读取阶段424结束时,施加至开关264的信号408(φ3)设定为低,以使电荷泵放大器250与驱动电路202隔开。来自放大器输出256的输出电压信号416Vout现在是驱动晶体管220的阈值电压的函数,其由下式得出:
图4B是假设驱动晶体管220为p型晶体管在像素内提取图2中OLED22的阈值电压的时序图。该提取过程与用于图3A中n型驱动晶体管的提取电路200的信号时序非常相似。图4B图示了图2中的选择输入230、开关260、262、264和254、编程数据输入232、节点244处的电压以及放大器输出256的电压信号432-446。提取过程包括重置阶段450、积分阶段452、预充电阶段454和读取阶段456。该读出周期与图4A中的读出周期相比较的主要差别在于施加至编程数据输入232(VData)的信号442的电平,这些电平在各个读出阶段都施加至驱动晶体管210。对于可用于驱动晶体管220的p型薄膜晶体管,施加至选择输入232的选择信号430为低电平有效。选择输入232在整个如图4B所示的读出过程中都保持为低。
读出过程首先在重置阶段450中重置电容器240(COLED)。施加至开关260的信号434(φ1)设定为高以提供放电路径至地面。施加至编程输入232(VData)的信号442降低至VRST_OLED以导通驱动晶体管220。
在积分阶段452中,施加至开关260和262的信号434和436(φ1、φ2)分别设定为关断和接通状态,以向OLED222提供充电路径。电容器240(COLED)可允许充电,一直到节点244处的电压444超过使OLED222导通的阈值电压为止。在积分阶段452结束前,施加至编程输入232(VData)的电压信号442升高至VOFF以关断驱动晶体管220。
在预充电阶段454期间,电容器240(COLED)上积累的电荷被放电至OLED222中,直到节点244处的电压444达到OLED的阈值电压为止。而且,在预充电阶段454中,施加至开关260和262的信号434和436(φ1、φ2)关断,而施加至开关264和254的信号438和440(φ3、φ4)接通。这就提供了使放大器250将供给线212(VD)预充电至设置在放大器250正输入处的共模电压输入258(VCM)的条件。在预充电阶段结束时,施加至开关254的信号430(φ4)关断以使电荷泵放大器250为读取阶段456做准备。
当施加至编程输入232(VData)的电压442降低至VRD_OLED,读取阶段456就通过导通驱动晶体管229而启动。储存在电容器240(COLED)上的电荷现在传输至电容器252(CINT),电容器252(CINT)在放大器250的输出256处建立输出电压446,该输出是OLED220的阈值电压的函数。
图4C是当驱动晶体管220为p型晶体管时在图2所示提取系统200中直接提取驱动晶体管220的阈值电压的信号时序图。图4C示出了图2中的选择输入230、开关260、262、264和254、编程数据输入232、节点244处的电压以及输出电压256的电压信号462-476。提取过程包括预充电阶段480和积分阶段482。然而,在图4C的时序图中,示出了专门的最终读取阶段484,如果电荷泵放大器250的输出在积分阶段482结束时被采样,那么可去除该专门的读取阶段484。
提取过程通过同时对图2中的漏极储存电容器224、源极储存电容器226、电容器240(COLED)和电容器242预充电而启动。为此,如图4C所示,施加至选择线输入230和开关264和254的信号462、468和470变为有效。在整个读出过程中,施加至开关260和262的信号404和406(φ1、φ2)都保持为低。共模电压输入258(VCM)的电平确定供给线212上的电压和节点244处的电压。共模电压(VCM)应足够低以使OLED222不会导通。施加至编程输入232(VData)的电压472设定为足够低的电平(VRST_TFT)以导通晶体管220。
在积分阶段482开始时,施加至开关254的信号470(φ4)关断以允许电荷泵放大器250对通过驱动晶体管220的电流进行积分。电荷泵放大器250的输出电压256将以恒定速率倾斜变化,该速率是驱动晶体管220的阈值电压及其栅源电压的函数。在积分阶段482结束之前,施加至开关264的信号468(φ3)关断以使电荷泵放大器250与驱动电路220隔开。因此,放大器250的输出电压256由下式得出:
其中,ITFT为驱动晶体管220的漏极电流,该电流为迁移率和(VCM-VData-|Vth|)的函数。Tint是积分时长。在可选的读取阶段484中,施加至开关264的信号468(φ3)保持为低,以使电荷泵放大器250与驱动晶体管202隔开。输出电压256是驱动晶体管220的迁移率和阈值电压的函数,输出电压256在读取阶段484中任何时间都可被采样。
图4D是直接读取图2中OLED222的时序图。当使用足够高的栅源电压导通驱动晶体管220时,驱动晶体管220可用作模拟开关以接通OLED222的阳极端。在这种情况下,节点244处的电压基本上等于供给线212(VD)上的电压。因此,通过驱动晶体管220的驱动电流仅是OLED222的导通电压和设定在供给线212上的电压的函数。驱动电流可由电荷泵放大器250提供。当积分超过特定时长后,积分电路206的输出电压256就是OLED222老化程度的量度。
图4D是示出了施加至提取电路200以通过直接读取而提取OLED222的导通电压的信号的时序图。图4D示出了读出过程的三个阶段:预充电阶段486、积分阶段487和读取阶段488。图4D包括:用于图2中选择输入230的信号489n或489p、施加至开关260的信号490(φ1)、用于开关262的信号491(φ2)、用于开关264的信号492(φ3)、用于开关254的信号493(φ4)、用于图2中编程数据输入232的编程电压信号494n或494p、图2中节点244的电压495以及图2中放大器250的输出256的输出电压信号496。
该过程通过使得与阵列102中所需的像素行相对应的选择信号有效而开始。如图4D所示,对于n型选择晶体管,选择信号489n为高电平有效,而对于p型选择晶体管,其为低电平有效。在n型驱动晶体管中,将高电平选择信号489n施加至选择输入230。在驱动晶体管220为p型驱动晶体管时,将低电平信号489p施加至选择输入230。
在预充电周期486和积分周期487期间,选择信号489n或489p将保持有效。在该读出方法中,φ1和φ2输入490和491无效。在预充电周期中,开关信号492φ3和493φ4设定为高电平以提供信号路径,以使得供给线(Cp)的寄生电容242和节点244处的电压被预充电至在放大器250的非反相端处所提供的共模电压(VCMOLED)。足够高的驱动电压信号494n或494p(VON_nTFT或VON_pTFT)施加至数据输入232(VData),以使驱动晶体管220作为模拟开关而操作。因此,供给电压212VD和节点244被预充电至共模电压(VCMOLED)以为下一周期做准备。在积分阶段487开始时,开关输入493φ4关断,以允许电荷泵模块206对OLED222的电流进行积分。电荷泵模块206的输出电压496将以恒定速率倾斜变化,该速率是OLED222的导通电压和设定在节点244处的电压495(即VCMOLE)的函数。在积分阶段487结束之前,开关信号492φ3关断以使电荷泵模块206与像素电路202隔开。此刻之后,输出电压保持恒定直到电荷泵放大器206为了另一次读取而重置。当经过一段时间的积分后,积分器的输出电压就由下式得出:
其是OLED的老化程度的度量。该等式中的Tint为开关信号493(φ4)的下降缘与开关信号492(φ3)的下降缘之间的时间间隔。
如图2中的二晶体管型驱动电路的相似提取过程可用于提取非一致性和老化的参数,例如提取作为图5所示数据提取系统500一部分的三晶体管型驱动电路的阈值电压和迁移率。数据提取系统500包括驱动电路502和读出电路504。读出电路504作为电流供给和读出电路120的一部分并从图1所示像素104的列中收集数据,读出电路504包括电荷泵电路506和开关盒电路508。电压源510向驱动电路502提供供电电压(VDD)。如同图1中的电压驱动器114和电流供给和读出电路120,电荷泵电路506和开关盒电路508设置在阵列102的顶侧或底侧。这是通过在与阵列102的基板相同的基板上进行直接制造或通过将微芯片结合在基板上或电线上作为混合解决方案而实现的。
驱动电路502包括驱动晶体管520、有机发光器件522、漏极储存电容器524、源极储存电容器526和选择晶体管528。选择线输入530连接至选择晶体管528的栅极。编程输入532通过选择晶体管528连接至驱动晶体管520的栅极。选择线输入530还连接至输出晶体管534的栅极。输出晶体管534连接至驱动晶体管520的源极和电压监测输出线536。驱动晶体管520的漏极连接至供给电压源510,驱动晶体管520的源极连接至OLED522。源极储存电容器526连接在驱动晶体管520的栅极和源极之间。漏极储存电容器524连接在驱动晶体管520的栅极和漏极之间。OLED522具有可建模为电容器540的寄生电容。监测输出电压线536也具有可以建模为电容器542的寄生电容。本示例中的驱动晶体管520为由非晶硅制造的薄膜晶体管。电压节点544为驱动晶体管520的源极端与OLED522之间的点。在本示例中,驱动晶体管520为n型晶体管。系统500可用p型驱动晶体管代替驱动晶体管520而实施。
读出电路504包括电荷泵电路506和开关盒电路508。电荷泵电路506包括放大器550,该放大器550在负反馈回路中具有电容器552(Cint)。开关554(S4)用于在预充电阶段使电容器552Cint放电。放大器550具有与电容器552和开关554连接的负输入端和与共模电压输入558(VCM)连接的正输入端。放大器550的输出556可以指示驱动晶体管520和OLED222的多个提取出的因数,这将在下面进行解释。
开关盒电路508包括几个开关560、562和564,这几个开关用于将电流导入和导出驱动电路502。开关560用于在重置阶段提供放电路径至地面。开关562用于在像素104的正常操作期间和在读出过程的积分阶段期间提供电源连接。开关564用于使电荷泵电路506和供给线电压源510隔开。
在三晶体管驱动电路502中,读出通常通过监测线536进行。读出也可通过来自供给电压源510的电压供给线进行,这与图3A-3CA中的时序信号过程相似。施加至开关560、562、564和554的输入信号(φ1-φ4)、选择输入530以及编程电压输入532(VData)的准确时序用于控制读出电路500的操作。在读出过程的各个阶段中,向编程数据输入532(VData)和共模电压输入558(VCM)施加特定电平。
三晶体管驱动电路502可通过编程电压输入532和监测输出536而有区别地进行编程。因此,重置阶段和预充电阶段可合并在一起以形成重置/预充电阶段,之后进行积分阶段和读取阶段。
图6A是提取图5中驱动晶体管520的阈值电压和迁移率所涉及的信号的时序图。该时序图包括图5中的选择输入530、开关560、562、564和554、编程电压输入532、驱动晶体管520的栅极处的电压、节点544处的电压以及输出电压556的电压信号602-618。图6A中的读出过程具有预充电阶段620、积分阶段622和读取阶段624。读出过程通过同时对漏极电容器524、源极电容器526和寄生电容器540和542进行预充电而启动。为此,选择线电压602和施加至开关564和554的信号608和610(φ3、φ4)如图6A所示而变成有效。施加至开关560和562的信号604和606(φ1、φ2)在整个读出周期中保持为低。
共模输入558(VCM)的电平确定输出监测线536上的电压和节点544处的电压。施加至共模输出558(VCMTFT)的电压应足够低以使OLED222不会导通。在预充电阶段620中,施加至编程电压输入532(VData)的电压信号612足够高(VRST_TFT)以导通驱动晶体管520,并且还足够低以使OLED522总是保持关断。
在积分阶段622开始时,施加至选择输入530的电压602变成无效,以允许电荷被储存在电容器540(COLED)中。节点544处的电压开始升高,驱动晶体管520的栅极电压跟着升高,驱动晶体管520的栅极电压升高的速率为源极电容器526的电容值与源极电容器526的电容加上漏极电容器524的电容之和的比值[CS1/(CS1+CS2)]。一旦驱动晶体管520的栅极电压和节点544处的电压之间的差值等于驱动晶体管520的阈值电压,便结束充电。在积分阶段622结束之前,施加至开关554的信号610(φ4)关断以使电荷泵放大器550为读取阶段624做准备。
为了进行读取阶段624,施加至选择输入530的信号602再次变成有效。编程输入532(VRD_TFT)上的电压信号612足够低,以使驱动晶体管520保持关断。储存在电容器240(COLED)上的电荷现在传输至电容器254(CINT)并且创建了输出电压618,该输出电压618与驱动晶体管520的阈值电压成比例:
在读取阶段624结束之前,施加至开关564的信号608(φ3)关断以使电荷泵电路506与驱动电路502隔开。
图6B是用于提取图5中OLED522的导通电压的输入信号的时序图。图6B包括图5中的选择输入530、开关560、562、564和554、编程电压输入532、驱动晶体管520的栅极处的电压、节点544处的电压、共模电压输入558以及输出电压556的电压信号632-650。图6B中的读出过程具有预充电阶段652、积分阶段654和读取阶段656。与图6A中驱动晶体管220的读出相似,读出过程通过在预充电阶段652中同时对漏极电容器524、源极电容器526和寄生电容器540和542进行预充电而启动。为此,施加至选择输入530的信号632和施加至开关564和554的信号638和640(φ3、φ4)如图6B所示变成有效。信号634和636(φ1、φ2)在整个读出周期中都保持为低。施加至共模电压输入258的输入电压648(VCMPre)应足够高以使OLED522导通。施加至编程输入532(VData)的电压642(VPre_OLED)足够低以使驱动晶体管520保持关断。
在积分阶段654开始时,施加至选择输入530的信号632变成无效,以允许电荷储存在电容器540(COLED)中。节点544处的电压开始降低,驱动晶体管520的栅极电压跟着降低,驱动晶体管520的栅极电压降低的速率是源极电容器526的电容值与源极电容器526的电容加上漏极电容器524的电容之和的比值[CS1/(CS1+CS2)]。一旦节点544处的电压达到OLED522的导通电压(VOLED),放电便完成。在积分阶段654结束之前,施加至开关554的信号640(φ4)关断以使电荷泵电路506为读取阶段656做准备。
为了进行读取阶段656,施加至选择输入530的信号632再次变成有效。编程输入532(VRD_OLED)上的电压642应足够低以使驱动晶体管520保持关断。储存在电容器540(COLED)上的电荷接着传输至电容器552(CINT)以在放大器输出556处创建输出电压650,该输出电压与OLED522的导通电压成比例。
在读取阶段656结束之前,信号638(φ3)关断以使电荷泵电路508与驱动晶体管502隔开。
如图所示,监测输出晶体管534为驱动晶体管520或OLED522的电流的线性积分提供直接路径。读出可在预充电和积分周期进行。然而,图6C图示出了另外的最终读取阶段的输入信号的时序图,如果电荷泵电路508的输出在积分阶段中被采样,那么可去除该另外的最终读取阶段。图6C包括图5中的选择输入530、开关560、562、564和554、编程电压输入532、节点544处的电压以及输出电压556的电压信号660-674。图6C中的读出过程因此而具有预充电阶段676、积分阶段678和可选的读取阶段680。
如图6C所示,图5中n型晶体管520的直接积分读出过程是通过同时对漏极电容器524、源极电容器526和寄生电容器540和542预充电而启动的。为此,施加至选择输入530的信号660和施加至开关564和554的信号666和668(φ3、φ4)就如图6C所示而变成有效。施加至开关560和562的信号662和664(φ1、φ2)在整个读出周期中保持为低。共模电压输入558(VCM)的电平确定监测输出线536上的电压和节点544处的电压。共模电压输出558的电压信号(VCMTFT)足够低以使OLED522不会导通。施加至编程输入532(VData)的信号670(VON_TFT)足够高以使驱动晶体管520导通。
在积分阶段678开始时,施加至开关554的信号668(φ4)关断以允许电荷泵放大器550对来自驱动晶体管520的电流进行积分。电荷泵放大器550的输出电压674以恒定速率降低,该速率是驱动晶体管520的阈值电压、迁移率和栅源电压的函数。在积分阶段结束之前,施加至开关564的信号666(φ3)关断以使电荷泵电路508与驱动电路502隔开。因此,输出电压由下式得出:
其中,ITFT为驱动晶体管520的漏极电流,该电流为迁移率和(VData-VCM-Vth)的函数。Tint是积分时长。输出电压674是驱动晶体管520的迁移率和阈值电压的函数,其可在读取阶段680的任何时候被采样。
图6D示出了用于直接读取图5中OLED522的导通(阈值)电压的输入信号的时序图。图6D包括图5中的选择输入530、开关560、562、564和554、编程电压输入532、节点544处的电压以及输出电压556的电压信号682-696。图6C中的读出过程具有预充电阶段697、积分阶段698和可选的读取阶段699。
如图6D中的读出过程是通过同时对漏极电容器524、源极电容器526和寄生电容器540和542预充电而启动的。为此,施加至选择输入530的信号682和施加至开关564和554的信号688和690(φ3、φ4)就如图6D所示而变成有效。信号684和686(φ1、φ2)在整个读出周期中都保持为低。共模电压输入558(VCM)的电平确定监测输出线536上的电压和节点544处的电压。共模电压输入558的电压信号(VCMOLED)足够高以使OLED522导通。编程输入532(VData)的信号692(VOFF_TFT)足够低以使驱动晶体管520保持关断。
在积分阶段698开始时,施加至开关552的信号690(φ4)关断以允许电荷泵放大器550对来自OLED522的电流进行积分。电荷泵放大器550的输出电压696将以恒定速率倾斜变化,该速率是阈值电压和OLED522上的电压的函数。
在积分阶段698结束之前,施加至开关564的信号668(φ3)关断以使电荷泵电路508与驱动电路502隔开。因此,输出电压由下式得出:
其中,IOLED为OLED电流,该电流是(VCM-Vth)的函数,Tint为积分时长。输出电压是OLED522的阈值电压的函数,其可在读取阶段699中的任何时候被采样。
计算机、软件和网络领域中的技术人员会理解,图1中的控制器112通常地可采用一个或多个根据本文描述和图示的教导进行编程的通用计算机系统、微处理器、数字信号处理器、微控制器、专用集成电路(ASIC)、可编程逻辑装置(PLD)、现场可编程逻辑装置(FPLD)、现场可编程栅极阵列(FPGA)来实现。
此外,可用两个或多个计算系统或装置代替本文中描述的任何一个控制器。相应地,如冗余、重复等分布式处理的原理和优点也可根据需要实现,以增加本文所述控制器的鲁棒性和性能。控制器也可在计算机系统或使用任何适合的界面机制和通信技术延伸跨过任何网络环境的系统上实施,这些通信技术例如包括:任何适合形式的电信(例如,语音、调制解调器等)、公用交换电话网(PSTN)、分组数据网络(PDN)、因特网、内联网及其结合等。
下面将参照图7所示流程图对示例的数据提取过程的操作进行描述。图7中的流程图表示用于确定简单驱动电路的阈值电压和迁移率的示例的机器可读指令,该简单驱动电路可以实现图1中像素104的最大孔径。在本示例中,机器可读指令包括由以下元件执行的算法:(a)处理器、(b)控制器、和/或(c)一个或多个其它适合的处理装置。该算法可包含在储存于如闪存、CD-ROM、软盘、硬盘驱动器、数字视频(通用)磁盘(DVD)或其它存储器等有形介质中的软件中。但是本领域中的普通技术人员将很容易理解整个算法和/或部分算法也可由除处理器之外的装置来执行,和/或通过熟知的方式嵌入固件或专用硬件中(例如,其可通过使用专用集成电路(ASIC)、可编程逻辑装置(PLD)、现场可编程逻辑装置(FPLD)、现场可编程栅极阵列(FPGA)、离散逻辑等来实现)。例如,提取序列中的任何或所有部件都可通过软件、硬件和/或固件来实现。同样,由图7的流程图所代表的机器可读指令中的一些或全部可手动实现。而且,尽管示例性算法是参照图7所示流程图而描述的,但本领域中的普通技术人员将很容易理解也可使用许多其它方法来实施示例的机器可读指令。例如,可改变模块的执行顺序和/或可改变、去除或组合所述的一些模块。
通过接通相应的选择和编程线对进行研究中的像素104进行选择(700)。一旦选择了像素104,便通过四个阶段执行读出。读出过程一开始是首先在重置阶段(702)对OLED上的寄生电容(Coled)进行放电。接着,将驱动晶体管导通特定时长,这使得一些电荷积累在OLED的电容(Coled)上(704)。在该积分阶段,选择晶体管关断以隔离OLED的电容Coled上的电荷,接着线路寄生电容(CP)被预充电至已知的电平(706)。最后,在读取阶段(708),驱动晶体管再次导通,以允许OLED的电容Coled上的电荷传输至电荷泵放大器输出。放大器的输出代表的数量是迁移率和阈值电压的函数。通过取消选择像素以完成读出过程,从而防止校准其它像素时带来的干扰。
图8是如图2中的二晶体管电路和图5中的三晶体管电路等像素电路的不同提取周期和参数应用的流程图。一个流程是与电荷传输相关的像素内积分(800)。与想要的参数有关的电荷累积在像素的内部电容中(802)。该电荷接着传输至外部读出电路(比如电荷泵电路或积分器)以建立成比例的电压(804)。另外一个流程是离像素积分或直接积分(810)。器件电流由外部读出电路(比如电荷泵电路或积分器)直接进行积分(812)。
在两个流程中,生成的电压都经过后处理以求出想要的参数,比如求出驱动晶体管的阈值电压或迁移率和OLED的导通电压(820)。提取出的参数接着可用于多种应用场合(822)。使用参数的示例包括:根据提取出的参数修改编程数据以补偿像素变化(824)。另一示例为对像素面板进行预老化(826)。另一示例为:在制造后估计像素面板的加工成品率。
图9是数据提取系统的部件的方块图和图表,该数据提取系统包括像素电路900、开关盒902和可为电荷泵/积分器的读出电路904。像素电路900的组成部件(910)包括:如OLED等发光器件、如驱动晶体管等驱动装置、如电容器等储存装置以及如选择开关等接入开关。开关盒902的组成部件912包括:一组可由外部控制信号控制的电子开关。读出电路904的组成部件914包括:放大器、电容器和重置开关。
想要的参数可如方框920表示的那样储存。本示例中想要的参数可包括:驱动晶体管的阈值电压、驱动晶体管的迁移率以及OLED的导通电压。开关盒902的功能由方框922表示。这些功能可包括:将电流导入和导出像素电路900、在像素电路900和读出电路904的电荷泵之间提供放电路径、并且使读出电路904的电荷泵与像素电路900隔开。读出电路904的功能由方框924表示。其中一个功能包括:将电荷从像素电路900的内部电容传输至读出电路904的电容器,以生成与像素内积分情况下的电荷成比例的电压(如图8中的步骤800-804)。另一个功能包括:对像素电路900中的驱动晶体管或OLED的电流进行特定时间的积分,以生成与该电流成比例的电压(如图8中步骤810-814)。
尽管已经对本发明的特定实施例和应用进行了图示和描述,但应理解,本发明不限于本文所公开的精确结构和组成,在不背离所附权利要求所定义的本发明的精神和范围的情况下,对上述描述做出多种修改、改变和变化将是显而易见的。
Claims (26)
1.一种用于基于有机发光器件(OLED)的显示器的数据提取系统,所述系统包括:
像素电路,其包括有机发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、用于提供编程信号的编程输入和用于储存所述编程信号的储存装置;
电荷泵放大器,其具有电流输入和电压输出,所述电荷泵放大器包括呈负反馈结构的运算放大器,所述负反馈由连接在所述运算放大器的输出与反相输入之间的电容器提供,共模电压源驱动所述运算放大器的非反相输入,并且在所述电容器上跨接有电子开关以重置所述电容器;
开关模块,其包括与所述像素电路的输出连接的输入以及与所述电荷泵放大器的输入连接的输出,所述开关模块包括多个电子开关,以用于将电流导入和导出所述像素电路、在所述像素电路与所述电荷泵放大器之间提供放电路径、并使所述电荷泵放大器与所述像素电路隔开;以及
控制器,其与所述像素电路、所述电荷泵放大器和所述开关模块连接,所述控制器以预定顺序控制施加至所述像素电路、所述电荷泵放大器和所述开关模块的输入信号以生成输出电压值,所述输出电压值是所述像素电路的参数的函数,所述顺序包括向所述编程输入提供编程电压,从而:
将所述像素电路的内部电容预充电至一定电荷量,并经由所述开关模块将所述电荷传输至所述电荷泵放大器以生成所述输出电压值;或者,
通过将来自所述像素电路的电流经由所述开关模块提供至所述电荷泵放大器,以通过在特定时间段内进行积分而生成所述输出电压值。
2.如权利要求1所述的系统,其中,所述驱动装置是由多晶硅、非晶硅、金属氧化物或其它适合的材料制成的n型或p型驱动晶体管。
3.如权利要求2所述的系统,其还包括连接在所述编程输入与所述驱动晶体管的栅极之间的选择晶体管,其中,所述控制器提供选择信号,并且所述选择信号与所述选择晶体管的栅极连接,以将所述选择晶体管作为电子开关而操作。
4.如权利要求3所述的系统,其中,所述驱动装置通过所述驱动装置的源极端或漏极端而与所述开关模块的输入连接。
5.如权利要求3所述的系统,其还包括连接在所述开关模块的输入与所述驱动装置的源极端或漏极端之间的监测晶体管,其中,所述选择信号连接至所述监测晶体管的栅极,以将所述监测晶体管作为电子开关而操作。
6.如权利要求2所述的系统,其中,所述参数是所述驱动晶体管的阈值电压,所述像素的内部电容被预充电至不会使所述OLED导通的量,所储存的电荷可通过所述开关模块进行放电并可被传输至所述电荷泵放大器,一直到所述驱动晶体管的栅源驱动电压等于其阈值电压为止,所述电荷泵放大器的输出电压值是所述阈值电压、反馈电容器、OLED电容和编程输入电压的函数。
7.如权利要求2所述的系统,其中,所述参数是所述驱动晶体管的迁移率,所述像素的内部电容被预充电至不会使所述OLED导通的量,所储存的电荷可部分地通过所述开关模块进行放电,并且可在较短积分时间内传输至所述电荷泵放大器,并且所述电荷泵放大器的输出电压值是所述驱动晶体管的迁移率、积分时间、反馈电容器和编程输入电压的函数。
8.如权利要求1所述的系统,其中,所述参数是所述OLED的导通电压,OLED电容被预充电至高于所述OLED的导通电压的量,所述OLED电容上的电荷接着通过所述OLED进行放电,一直到所述电荷达到所述OLED的导通电压为止,所述OLED电容上其余的电荷接着通过所述开关模块被传输至所述电荷泵放大器,并且所述放大器的输出为所述OLED的导通电压的值,所述值是所述放大器的反馈电容和所述OLED电容的函数。
9.如权利要求2所述的系统,其中,所述参数为所述驱动晶体管的阈值电压和迁移率,所述编程电压设定为恰当值以使所述驱动晶体管导通,所述开关模块将所述驱动晶体管的电流导入所述电荷泵放大器,以在特定时间内直接对所述电流进行积分,并且所述放大器的输出是所述阈值电压和所述迁移率的值,所述值是所述放大器的反馈电容器、积分时长和所述编程电压的函数。
10.如权利要求2所述的系统,其中,所述参数为所述OLED的导通电压,所述编程电压设定为恰当值以使所述驱动晶体管作为开关而操作,所述开关模块将所述OLED的电流导入所述电荷泵放大器,以使得在特定时间内直接对所述电流进行积分,所述放大器的输出是所述OLED的导通电压值,所述值是所述放大器的反馈电容器、积分时长和所述放大器的非反相输入处设定的共模电压的函数。
11.一种用于从像素电路提取电路参数的方法,所述像素电路包括发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、编程输入和用于储存编程信号的储存装置,所述方法包括:
将所述像素电路的电容充电至一定电荷,所述电荷与要从所述像素电路提取的所述电路参数有关;
将所述电荷传输至外部读出电路;
通过所述外部读出电路读出所述电荷或与所述电荷相关联的电压;以及根据所述读出确定至少一个像素电路参数。
12.如权利要求11所述的方法,其还包括:储存从与所述电荷相关联的所述电压导出的已确定参数,其中,所述驱动装置为驱动晶体管,所述发光器件为有机发光器件(OLED),并且,所述参数为所述驱动晶体管的阈值电压、所述驱动晶体管的迁移率或所述OLED的导通电压之一。
13.如权利要求12所述的方法,其还包括:通过以下至少一个操作来使用所述已确定参数:对施加至所述驱动晶体管的编程电压进行调节以补偿所述像素电路的偏差,将包括所述像素电路的显示器预老化,或评估包括所述像素电路的显示器的加工成品率。
14.如权利要求12所述的方法,其还包括:
向连接在所述编程输入与所述驱动晶体管的栅极之间的选择晶体管提供选择信号;以及
读取与所述驱动晶体管的源极或漏极连接的输出晶体管的监测输出。
15.如权利要求12所述的方法,其中,所述驱动晶体管为n型晶体管。
16.如权利要求12所述的方法,其中,所述驱动晶体管为p型晶体管。
17.一种用于基于有机发光器件(OLED)的显示器的数据提取系统,所述系统包括:
像素电路,其包括驱动晶体管、有机发光器件以及与所述驱动晶体管的栅极连接的编程输入,所述驱动晶体管的源极或漏极连接至所述OLED;
电荷泵放大器,其具有输入和积分电压输出;
开关模块,其包括与所述像素电路的输出连接的输入以及与所述电荷泵放大器的输入连接的输出,所述开关模块包括用于将电流导入和导出所述像素电路、在所述像素电路与所述电荷泵放大器之间提供放电路径、并将所述电荷泵放大器与所述像素电路隔开的开关;以及
控制器,其与所述像素电路、所述电荷泵放大器和所述开关模块连接,所述控制器用于以预定顺序控制施加至所述像素电路、所述电荷泵放大器和所述开关模块的电压输入以生成输出电压值,所述输出电压值是所述像素电路的参数的函数,所述顺序包括向所述编程输入提供编程电压,从而:将所述像素电路的电容预充电至一定电荷量,并经由所述开关模块将所述电荷传输至所述电荷泵放大器以生成所述输出电压值;或者通过将来自所述像素电路的电流经由所述开关模块提供至所述电荷泵放大器,以通过积分生成所述输出电压值。
18.如权利要求17所述的系统,其中,所述电荷泵放大器包括:
运算放大器,其具有负输入和连接至共模电压源的正输入;
反馈电容器,其连接在从所述放大器的所述负输入至输出的反馈回路中,以及
其中,所述开关模块的所述输出连接至所述运算放大器的所述负输入。
19.如权利要求17所述的系统,其还包括:
选择晶体管,其连接在所述编程输入与所述驱动晶体管的栅极之间;
输出晶体管,其连接在所述驱动晶体管的源极或漏极与监测输出之间,所述输出晶体管的栅极通过施加至所述选择晶体管的选择信号而启用。
20.如权利要求17所述的系统,其中,所述驱动晶体管为n型晶体管或p型晶体管。
21.一种用于从像素电路提取电路参数的方法,所述像素电路包括发光器件、用于向所述发光器件提供可编程驱动电流的驱动装置、编程输入和用于储存编程信号的储存装置,所述方法包括:
在所述发光器件和所述驱动装置中至少一者导通时,从所述像素电路提供电流,所述电流与要从所述像素电路提取的所述电路参数有关;
在外部读出电路中对来自所述像素电路的所述电流进行积分,以提供与所述电流成比例的电压输出;以及
根据所述电压输出确定至少一个像素电路参数。
22.如权利要求21所述的方法,其还包括:储存从所述输出电压导出的已确定参数,其中,所述驱动装置为驱动晶体管,所述发光器件为有机发光器件(OLED),并且,所述参数为所述驱动晶体管的阈值电压、所述驱动晶体管的迁移率或所述OLED的导通电压之一。
23.如权利要求22所述的方法,其还包括:通过以下至少一个操作来使用所述已确定参数:对施加至所述驱动晶体管的编程电压进行调节以补偿所述像素电路的偏差,将包括所述像素电路的显示器预老化,或评估包括所述像素电路的显示器的加工成品率。
24.如权利要求22所述的方法,其还包括:
向连接在所述编程输入与所述驱动晶体管的栅极之间的选择晶体管提供选择信号;以及
读取与所述驱动晶体管的源极或漏极连接的输出晶体管的监测输出。
25.如权利要求22所述的方法,其中,所述驱动晶体管为n型晶体管。
26.如权利要求22所述的方法,其中,所述驱动晶体管为p型晶体管。
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