JP4392165B2 - 遮蔽電極を有する有機発光ダイオード表示器 - Google Patents
遮蔽電極を有する有機発光ダイオード表示器 Download PDFInfo
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- JP4392165B2 JP4392165B2 JP2002566553A JP2002566553A JP4392165B2 JP 4392165 B2 JP4392165 B2 JP 4392165B2 JP 2002566553 A JP2002566553 A JP 2002566553A JP 2002566553 A JP2002566553 A JP 2002566553A JP 4392165 B2 JP4392165 B2 JP 4392165B2
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- oled display
- oled
- shielding electrode
- electrode
- thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Description
Claims (12)
- 有機発光ダイオード(OLED)表示器において、
基板と、
前記基板上に形成される複数のピクセルと、
を備え、
前記複数のピクセルの各々のピクセルは、
第一電極層と、
第二電極層と、
前記第一電極層および前記第二電極層の間のエレクトロルミネッセント層とを有するOLEDと、
該OLEDを駆動する駆動回路であって、該駆動回路は前記基板上に垂直方向に積層され、前記OLEDは前記駆動回路上に垂直方向に積層され、前記駆動回路は少なくとも1つの薄膜トランジスタを有する駆動回路と、
前記第二電極層と前記少なくとも1つの薄膜トランジスタとの間に配置された少なくとも1つの遮蔽電極であって、前記少なくとも1つの遮蔽電極は導電体から作られ、前記少なくとも1つの遮蔽電極は前記少なくとも1つの薄膜トランジスタのソースとドレインとの間の全領域を覆うように配置され、それによって前記OLEDと前記薄膜トランジスタとの間に誘導される寄生容量を減らすような遮蔽電極と、
を有していることを特徴とするOLED表示器。 - 請求項1に記載のOLED表示器において、前記少なくとも1つの遮蔽電極が接地されることを特徴とするOLED表示器。
- 請求項1または2に記載のOLED表示器において、
前記第一電極層および前記第二電極層が、
陽極層と、
陰極層とを含むことを特徴とするOLED表示器。 - 請求項1ないし3のいずれか一項に記載のOLED表示器において、前記少なくとも1つの薄膜トランジスタがゲートを有し、前記少なくとも1つの遮蔽電極が前記ゲートに電気的に接続されることを特徴とするOLED表示器。
- 請求項1ないし4のいずれか一項に記載のOLED表示器において、前記少なくとも1つの遮蔽電極は前記第二電極層に対して近くに配置されることを特徴とするOLED表示器。
- 請求項5に記載のOLED表示器において、前記ピクセルの各々はトップ放射用に形成され、該トップ放射において光が前記基板から離れる方向に向けられることを特徴とするOLED表示器。
- 請求項6に記載のOLED表示器において、前記駆動回路は逆スタガ薄膜構造で形成されることを特徴とするOLED表示器。
- 請求項1ないし7のいずれか一項に記載のOLED表示器において、前記少なくとも1つの遮蔽電極が、LCD製造工程における金属化層から形成されることを特徴とするOLED表示器。
- 請求項7に記載のOLED表示器において、前記少なくとも1つの遮蔽電極が長方形形状に形成されることを特徴とするOLED表示器。
- 請求項1ないし7のいずれか一項に記載のOLED表示器において、前記少なくとも1つの遮蔽電極がアルミニウムおよびモリブデンのうちの少なくとも一つを有することを特徴とするOLED表示器。
- 請求項1に記載のOLED表示器において、前記駆動回路が、アモルファスシリコンにおいて形成されることを特徴とするOLED表示器。
- 請求項1に記載のOLED表示器において、前記ピクセルの各々はボトム放射用に形成され、該ボトム放射において光が前記基板を通過する方向に向けられることを特徴とするOLED表示器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26889901P | 2001-02-16 | 2001-02-16 | |
PCT/CA2002/000180 WO2002067328A2 (en) | 2001-02-16 | 2002-02-18 | Organic light emitting diode display having shield electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004531752A JP2004531752A (ja) | 2004-10-14 |
JP4392165B2 true JP4392165B2 (ja) | 2009-12-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2002566553A Expired - Lifetime JP4392165B2 (ja) | 2001-02-16 | 2002-02-18 | 遮蔽電極を有する有機発光ダイオード表示器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7248236B2 (ja) |
EP (1) | EP1362374B1 (ja) |
JP (1) | JP4392165B2 (ja) |
CA (1) | CA2438581C (ja) |
WO (1) | WO2002067328A2 (ja) |
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JPH0990405A (ja) * | 1995-09-21 | 1997-04-04 | Sharp Corp | 薄膜トランジスタ |
CN1267871C (zh) * | 1997-08-21 | 2006-08-02 | 精工爱普生株式会社 | 显示装置 |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
JP3702096B2 (ja) * | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
JP2000172199A (ja) * | 1998-12-01 | 2000-06-23 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000231346A (ja) | 1999-02-09 | 2000-08-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP4337171B2 (ja) * | 1999-06-14 | 2009-09-30 | ソニー株式会社 | 表示装置 |
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- 2002-02-18 EP EP02711722.5A patent/EP1362374B1/en not_active Expired - Lifetime
- 2002-02-18 WO PCT/CA2002/000180 patent/WO2002067328A2/en active Application Filing
- 2002-02-18 JP JP2002566553A patent/JP4392165B2/ja not_active Expired - Lifetime
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US20040130516A1 (en) | 2004-07-08 |
WO2002067328A3 (en) | 2002-11-07 |
US7248236B2 (en) | 2007-07-24 |
CA2438581A1 (en) | 2002-08-29 |
JP2004531752A (ja) | 2004-10-14 |
WO2002067328A2 (en) | 2002-08-29 |
CA2438581C (en) | 2005-11-29 |
EP1362374A2 (en) | 2003-11-19 |
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