SG152291A1 - Stage drive method and stage unit, exposure apparatus, and device manufacturing method - Google Patents

Stage drive method and stage unit, exposure apparatus, and device manufacturing method

Info

Publication number
SG152291A1
SG152291A1 SG200903000-8A SG2009030008A SG152291A1 SG 152291 A1 SG152291 A1 SG 152291A1 SG 2009030008 A SG2009030008 A SG 2009030008A SG 152291 A1 SG152291 A1 SG 152291A1
Authority
SG
Singapore
Prior art keywords
stage
state
liquid
exposure apparatus
optical system
Prior art date
Application number
SG200903000-8A
Other languages
English (en)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of SG152291A1 publication Critical patent/SG152291A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70666Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0275Photolithographic processes using lasers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Eyeglasses (AREA)
  • Prostheses (AREA)
SG200903000-8A 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method SG152291A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004025837 2004-02-02
JP2004300566 2004-10-14

Publications (1)

Publication Number Publication Date
SG152291A1 true SG152291A1 (en) 2009-05-29

Family

ID=34829444

Family Applications (5)

Application Number Title Priority Date Filing Date
SG2013076823A SG195559A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG2012080503A SG185343A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG2012080495A SG185342A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG200903000-8A SG152291A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG200903003-2A SG152294A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method

Family Applications Before (3)

Application Number Title Priority Date Filing Date
SG2013076823A SG195559A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG2012080503A SG185343A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG2012080495A SG185342A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200903003-2A SG152294A1 (en) 2004-02-02 2005-01-27 Stage drive method and stage unit, exposure apparatus, and device manufacturing method

Country Status (12)

Country Link
US (15) US7589822B2 (de)
EP (9) EP2980834B1 (de)
JP (16) JP4910394B2 (de)
KR (16) KR101187615B1 (de)
CN (1) CN101685263B (de)
AT (1) ATE493753T1 (de)
DE (1) DE602005025596D1 (de)
HK (8) HK1093606A1 (de)
IL (7) IL226838A (de)
SG (5) SG195559A1 (de)
TW (14) TWI578114B (de)
WO (1) WO2005074014A1 (de)

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101178756B1 (ko) 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
TWI433212B (zh) 2003-06-19 2014-04-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
KR101380989B1 (ko) * 2003-08-29 2014-04-04 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070030467A1 (en) * 2004-02-19 2007-02-08 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
JP4220423B2 (ja) * 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
KR101181683B1 (ko) * 2004-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
EP3462241A1 (de) * 2004-06-21 2019-04-03 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
KR101331631B1 (ko) 2004-10-15 2013-11-20 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI416265B (zh) * 2004-11-01 2013-11-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI649790B (zh) 2004-11-18 2019-02-01 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
WO2006062074A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation 基板処理方法、露光方法、露光装置及びデバイス製造方法
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070258068A1 (en) * 2005-02-17 2007-11-08 Hiroto Horikawa Exposure Apparatus, Exposure Method, and Device Fabricating Method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
JP5239337B2 (ja) 2005-04-28 2013-07-17 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP5309565B2 (ja) * 2005-08-05 2013-10-09 株式会社ニコン ステージ装置、露光装置、方法、露光方法、及びデバイス製造方法
CN101258581B (zh) 2005-09-09 2011-05-11 株式会社尼康 曝光装置及曝光方法以及设备制造方法
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7871933B2 (en) * 2005-12-01 2011-01-18 International Business Machines Corporation Combined stepper and deposition tool
US8953148B2 (en) 2005-12-28 2015-02-10 Nikon Corporation Exposure apparatus and making method thereof
EP1975982A1 (de) 2005-12-28 2008-10-01 Nikon Corporation Strukturerzeugungsverfahren und strukturerzeugungsvorrichtung, belichtungsverfahren und belichtungsvorrichtung und bauelementeherstellungsverfahren
WO2007080523A1 (en) * 2006-01-10 2007-07-19 Koninklijke Philips Electronics N.V. Maglev object positioning apparatus and method for positioning an object and maintaining position with high stability
EP3171220A1 (de) 2006-01-19 2017-05-24 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
JP5195417B2 (ja) 2006-02-21 2013-05-08 株式会社ニコン パターン形成装置、露光装置、露光方法及びデバイス製造方法
WO2007097380A1 (ja) * 2006-02-21 2007-08-30 Nikon Corporation パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法
US8027021B2 (en) 2006-02-21 2011-09-27 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
WO2007102484A1 (ja) 2006-03-07 2007-09-13 Nikon Corporation デバイス製造方法、デバイス製造システム及び測定検査装置
US7230676B1 (en) * 2006-03-13 2007-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7760324B2 (en) * 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI454859B (zh) 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
CN101410948B (zh) 2006-05-18 2011-10-26 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
EP2034514A4 (de) 2006-05-22 2012-01-11 Nikon Corp Belichtungsverfahren und vorrichtung, wartungsverfahren und bauelementeherstellungsverfahren
CN102156389A (zh) 2006-05-23 2011-08-17 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
JPWO2007139017A1 (ja) * 2006-05-29 2009-10-08 株式会社ニコン 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法
TWI425318B (zh) 2006-06-09 2014-02-01 尼康股份有限公司 移動體裝置、曝光裝置和曝光方法以及元件製造方法
CN100456138C (zh) * 2006-06-13 2009-01-28 上海微电子装备有限公司 浸没式光刻机浸液流场维持系统
KR20090033170A (ko) 2006-06-30 2009-04-01 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법
WO2008026593A1 (fr) * 2006-08-30 2008-03-06 Nikon Corporation Dispositif d'exposition, procédé de fabrication de dispositif, procédé de nettoyage et élément de nettoyage
TWI572995B (zh) 2006-08-31 2017-03-01 尼康股份有限公司 Exposure method and exposure apparatus, and component manufacturing method
TWI653511B (zh) 2006-08-31 2019-03-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
CN103645608B (zh) 2006-08-31 2016-04-20 株式会社尼康 曝光装置及方法、组件制造方法以及决定方法
TWI652720B (zh) 2006-09-01 2019-03-01 日商尼康股份有限公司 Exposure method and device and component manufacturing method
KR101660668B1 (ko) 2006-09-01 2016-09-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7872730B2 (en) * 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
KR101413891B1 (ko) * 2006-09-29 2014-06-30 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP5055971B2 (ja) 2006-11-16 2012-10-24 株式会社ニコン 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
US7973910B2 (en) * 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
JP2009033111A (ja) * 2007-05-28 2009-02-12 Nikon Corp 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US7737515B2 (en) * 2007-06-20 2010-06-15 New Jersey Institute Of Technology Method of assembly using array of programmable magnets
WO2009011119A1 (ja) * 2007-07-13 2009-01-22 Nikon Corporation パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス
US9025126B2 (en) 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US8421994B2 (en) 2007-09-27 2013-04-16 Nikon Corporation Exposure apparatus
US8279399B2 (en) * 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2009060585A1 (ja) * 2007-11-07 2009-05-14 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US8760622B2 (en) 2007-12-11 2014-06-24 Nikon Corporation Movable body apparatus, exposure apparatus and pattern formation apparatus, and device manufacturing method
US8964166B2 (en) 2007-12-17 2015-02-24 Nikon Corporation Stage device, exposure apparatus and method of producing device
SG183058A1 (en) * 2007-12-17 2012-08-30 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
US20090153824A1 (en) * 2007-12-17 2009-06-18 Kla-Tencor Corporation Multiple chuck scanning stage
US8237916B2 (en) * 2007-12-28 2012-08-07 Nikon Corporation Movable body drive system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method
US8269945B2 (en) * 2007-12-28 2012-09-18 Nikon Corporation Movable body drive method and apparatus, exposure method and apparatus, pattern formation method and apparatus, and device manufacturing method
CN102566320B (zh) * 2007-12-28 2015-01-28 株式会社尼康 曝光装置、曝光方法以及器件制造方法
JP5369443B2 (ja) 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
US8208128B2 (en) 2008-02-08 2012-06-26 Nikon Corporation Position measuring system and position measuring method, Movable body apparatus, movable body drive method, exposure apparatus and exposure method, pattern forming apparatus, and device manufacturing method
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
US20100039628A1 (en) * 2008-03-19 2010-02-18 Nikon Corporation Cleaning tool, cleaning method, and device fabricating method
TW200947149A (en) 2008-04-11 2009-11-16 Nikon Corp Stage device, exposure device and device production method
US8654306B2 (en) * 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
US8786829B2 (en) 2008-05-13 2014-07-22 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8228482B2 (en) 2008-05-13 2012-07-24 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8817236B2 (en) 2008-05-13 2014-08-26 Nikon Corporation Movable body system, movable body drive method, pattern formation apparatus, pattern formation method, exposure apparatus, exposure method, and device manufacturing method
WO2009141720A1 (en) * 2008-05-22 2009-11-26 Micronic Laser Systems Ab Method and apparatus for overlay compensation between subsequently patterned layers on workpiece
US9176393B2 (en) * 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
TW201003053A (en) * 2008-07-10 2010-01-16 Nikon Corp Deformation measuring apparatus, exposure apparatus, jig for deformation measuring apparatus, position measuring method and device manufacturing method
WO2010050240A1 (ja) * 2008-10-31 2010-05-06 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
EP2189849B1 (de) 2008-11-21 2015-12-16 ASML Netherlands B.V. Lithographievorrichtung mit einer Wechselbrücke
EP2196857A3 (de) 2008-12-09 2010-07-21 ASML Netherlands BV Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US9062260B2 (en) 2008-12-10 2015-06-23 Chevron U.S.A. Inc. Removing unstable sulfur compounds from crude oil
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8896806B2 (en) 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20100196832A1 (en) * 2009-01-30 2010-08-05 Nikon Corporation Exposure apparatus, exposing method, liquid immersion member and device fabricating method
JP5482784B2 (ja) 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US8202671B2 (en) 2009-04-28 2012-06-19 Nikon Corporation Protective apparatus, mask, mask forming apparatus, mask forming method, exposure apparatus, device fabricating method, and foreign matter detecting apparatus
US20100296074A1 (en) * 2009-04-30 2010-11-25 Nikon Corporation Exposure method, and device manufacturing method
US20110085152A1 (en) * 2009-05-07 2011-04-14 Hideaki Nishino Vibration control apparatus, vibration control method, exposure apparatus, and device manufacturing method
TW201115280A (en) 2009-05-15 2011-05-01 Nikon Corp Exposure apparatus and device manufacturing method
US20100323303A1 (en) * 2009-05-15 2010-12-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, and device fabricating method
US8970820B2 (en) 2009-05-20 2015-03-03 Nikon Corporation Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method
US8792084B2 (en) * 2009-05-20 2014-07-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
IT1399285B1 (it) * 2009-07-03 2013-04-11 Applied Materials Inc Sistema di lavorazione substrato
US20110032495A1 (en) 2009-08-07 2011-02-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2011016254A1 (ja) 2009-08-07 2011-02-10 株式会社ニコン 移動体装置、露光装置及び露光方法、並びにデバイス製造方法
US8514395B2 (en) 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8493547B2 (en) 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110199591A1 (en) * 2009-10-14 2011-08-18 Nikon Corporation Exposure apparatus, exposing method, maintenance method and device fabricating method
JP5861642B2 (ja) 2009-11-09 2016-02-16 株式会社ニコン 露光装置、露光方法、露光装置のメンテナンス方法、露光装置の調整方法、デバイス製造方法、及びダミー基板
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
DE102009054653A1 (de) * 2009-12-15 2011-06-16 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Substrat für einen solchen Spiegel, Verwendung einer Quarzschicht für ein solches Substrat, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel oder einem solchen Substrat und Projetktionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
JPWO2011081062A1 (ja) 2009-12-28 2013-05-09 株式会社ニコン 液浸部材、液浸部材の製造方法、露光装置、及びデバイス製造方法
WO2011083724A1 (ja) 2010-01-08 2011-07-14 株式会社ニコン 液浸部材、露光装置、露光方法、及びデバイス製造方法
JP2011156678A (ja) * 2010-01-29 2011-08-18 Sony Corp 3次元造形装置、3次元造形物の製造方法及び3次元造形物
JP5842808B2 (ja) 2010-02-20 2016-01-13 株式会社ニコン 瞳強度分布を調整する方法
US20110222031A1 (en) 2010-03-12 2011-09-15 Nikon Corporation Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
NL2006506A (en) * 2010-04-28 2011-10-31 Asml Netherlands Bv A component of an immersion system, an immersion lithographic apparatus and a device manufacturing method.
US20120013864A1 (en) 2010-07-14 2012-01-19 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120013863A1 (en) 2010-07-14 2012-01-19 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US8937703B2 (en) 2010-07-14 2015-01-20 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120012191A1 (en) 2010-07-16 2012-01-19 Nikon Corporation Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US8418773B2 (en) 2010-09-10 2013-04-16 Jason Cerrano Fire-fighting control system
JP5510299B2 (ja) * 2010-12-13 2014-06-04 ウシオ電機株式会社 露光装置および露光方法
EP2469339B1 (de) 2010-12-21 2017-08-30 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US20120162619A1 (en) 2010-12-27 2012-06-28 Nikon Corporation Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium
US20120188521A1 (en) 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
US9030057B2 (en) 2011-06-24 2015-05-12 Nikon Corporation Method and apparatus to allow a plurality of stages to operate in close proximity
US20130016329A1 (en) 2011-07-12 2013-01-17 Nikon Corporation Exposure apparatus, exposure method, measurement method, and device manufacturing method
US9329496B2 (en) 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
US9256137B2 (en) 2011-08-25 2016-02-09 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
US20130050666A1 (en) 2011-08-26 2013-02-28 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
US8794610B2 (en) * 2011-09-20 2014-08-05 Mitutoyo Corporation Two-dimension precision transfer equipment, three-dimension precision transfer equipment, and coordinate measuring machine
NL2009345A (en) * 2011-09-28 2013-04-02 Asml Netherlands Bv Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods.
WO2013073538A1 (ja) 2011-11-17 2013-05-23 株式会社ニコン エンコーダ装置、移動量計測方法、光学装置、並びに露光方法及び装置
US20130135594A1 (en) 2011-11-25 2013-05-30 Nikon Corporation Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium
US20130169944A1 (en) 2011-12-28 2013-07-04 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, program, and recording medium
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
CN103199046B (zh) * 2012-01-05 2015-09-09 沈阳新松机器人自动化股份有限公司 晶圆缺口边缘中心预对准方法
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9268231B2 (en) 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
CN104364881A (zh) * 2012-04-13 2015-02-18 株式会社尼康 移动体装置、曝光装置以及器件制造方法
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
EP3723111B1 (de) 2012-10-02 2021-09-08 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und herstellungsverfahren
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9494870B2 (en) 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9772564B2 (en) * 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
EP2947679A4 (de) 2012-11-20 2017-02-08 Nikon Corporation Belichtungsvorrichtung, mobile vorrichtung und vorrichtungsherstellungsverfahren
EP2950328A4 (de) 2012-11-30 2017-01-25 Nikon Corporation Saugvorrichtung, eintrageverfahren, fördersystem, lichtexpositionsvorrichtung und vorrichtungsherstellungsverfahren
KR101450713B1 (ko) * 2012-12-05 2014-10-16 세메스 주식회사 기판 처리 장치
US9377697B2 (en) 2012-12-20 2016-06-28 Asml Netherlands B.V. Lithographic apparatus and table for use in such an apparatus
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
JP6119242B2 (ja) 2012-12-27 2017-04-26 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
JP5979302B2 (ja) 2013-02-28 2016-08-24 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
JP5344105B1 (ja) * 2013-03-08 2013-11-20 ウシオ電機株式会社 光配向用偏光光照射装置及び光配向用偏光光照射方法
JP6178092B2 (ja) * 2013-03-28 2017-08-09 株式会社荏原製作所 ステージ装置及び電子線応用装置
EP2838107B1 (de) 2013-08-14 2016-06-01 Fei Company Schaltungssonde für ladungsträgerstrahlsystem
JP6369472B2 (ja) 2013-10-08 2018-08-08 株式会社ニコン 液浸部材、露光装置及び露光方法、並びにデバイス製造方法
KR101827880B1 (ko) * 2013-10-09 2018-02-09 에이에스엠엘 네델란즈 비.브이. 편광 독립적 간섭계
US20150187540A1 (en) * 2013-12-27 2015-07-02 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article
JP6481242B2 (ja) * 2014-10-29 2019-03-13 新シコー科技株式会社 レンズ駆動装置、カメラ装置及び電子機器
KR20230130161A (ko) 2015-02-23 2023-09-11 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
JP6719729B2 (ja) 2015-02-23 2020-07-08 株式会社ニコン 基板処理システム及び基板処理方法、並びにデバイス製造方法
EP3742109A1 (de) 2015-02-23 2020-11-25 Nikon Corporation Messvorrichtung, lithographiesystem und belichtungsvorrichtung sowie vorrichtungsherstellungsverfahren
US9927723B2 (en) * 2015-03-24 2018-03-27 Applied Materials, Inc. Apparatus and methods for on-the-fly digital exposure image data modification
EP3291011A4 (de) 2015-03-25 2019-02-27 Nikon Corporation Layoutverfahren, markierungserkennungsverfahren, lichtexpositionsverfahren, messvorrichtung, lichtexpositionsvorrichtung und verfahren zur herstellung der vorrichtung
JP6700932B2 (ja) * 2016-04-20 2020-05-27 キヤノン株式会社 検出装置、検出方法、プログラム、リソグラフィ装置、および物品製造方法
JP6353487B2 (ja) * 2016-05-26 2018-07-04 株式会社サーマプレシジョン 投影露光装置及びその投影露光方法
US10845720B2 (en) * 2016-05-31 2020-11-24 Nikon Corporation Mark detection apparatus, mark detection method, measurement apparatus, exposure apparatus, exposure method and device manufacturing method
JP6929024B2 (ja) * 2016-07-06 2021-09-01 キヤノン株式会社 光学装置、露光装置及び物品の製造方法
KR102566162B1 (ko) * 2016-08-23 2023-08-10 삼성전자주식회사 웨이퍼 검사 장치 및 이를 이용한 웨이퍼 검사 방법
JP7081490B2 (ja) 2016-09-27 2022-06-07 株式会社ニコン レイアウト情報提供方法、レイアウト情報、決定方法、プログラム、並びに情報記録媒体
NL2020344A (en) * 2017-02-03 2018-08-14 Asml Netherlands Bv Exposure apparatus
US11125814B2 (en) * 2017-02-22 2021-09-21 Sintokogio, Ltd. Test system
US10009119B1 (en) * 2017-03-06 2018-06-26 The Boeing Company Bandgap modulation for underwater communications and energy harvesting
JP7364323B2 (ja) 2017-07-14 2023-10-18 エーエスエムエル ネザーランズ ビー.ブイ. 計測装置及び基板ステージ・ハンドラ・システム
JP6985102B2 (ja) * 2017-10-31 2021-12-22 株式会社ディスコ レーザー加工装置
JP7060995B2 (ja) * 2018-03-30 2022-04-27 キヤノン株式会社 ステージ装置、リソグラフィ装置、および物品の製造方法
CN112204707A (zh) * 2018-05-31 2021-01-08 应用材料公司 数字光刻系统的多基板处理
JP2020022010A (ja) 2018-07-30 2020-02-06 キヤノン株式会社 清掃装置及び清掃方法
CN110773513B (zh) * 2018-07-30 2022-12-20 佳能株式会社 清洁设备和清洁设备的控制方法
TWI721307B (zh) * 2018-09-21 2021-03-11 禾宬科技有限公司 半導體清洗裝置及方法
CN113490886A (zh) * 2019-02-28 2021-10-08 Asml荷兰有限公司 平台系统和光刻装置
US11094499B1 (en) * 2020-10-04 2021-08-17 Borries Pte. Ltd. Apparatus of charged-particle beam such as electron microscope comprising sliding specimen table within objective lens

Family Cites Families (345)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US478661A (en) 1892-07-12 Henri tudor
US723963A (en) * 1902-10-01 1903-03-31 Howard H Willson Temporary binder.
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3626560A (en) 1970-06-04 1971-12-14 Cogsdill Tool Prod Sizing and finishing device for external surfaces
US4026653A (en) 1975-05-09 1977-05-31 Bell Telephone Laboratories, Incorporated Proximity printing method
US4341164A (en) 1980-06-13 1982-07-27 Charles H. Ruble Folding camp table
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
US4465363A (en) 1981-11-27 1984-08-14 Hoechst Aktiengesellschaft Cleaning device for cleaning the peripheral surface of a photoconductive drum in an electrophotographic copier
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
JPS59228356A (ja) 1983-06-09 1984-12-21 Matsushita Electric Ind Co Ltd 空気電池の収納ケ−ス
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
US4650983A (en) 1983-11-07 1987-03-17 Nippon Kogaku K. K. Focusing apparatus for projection optical system
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6122249A (ja) 1984-07-11 1986-01-30 Tokyo Keiki Co Ltd 超音波探傷器
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2940553B2 (ja) 1988-12-21 1999-08-25 株式会社ニコン 露光方法
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法,露光装置,並びに位置検出方法及び装置
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JP3203719B2 (ja) 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
US5469963A (en) 1992-04-08 1995-11-28 Asyst Technologies, Inc. Sealable transportable container having improved liner
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3316833B2 (ja) 1993-03-26 2002-08-19 株式会社ニコン 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH06208058A (ja) 1993-01-13 1994-07-26 Olympus Optical Co Ltd 顕微鏡対物レンズ
US5591958A (en) 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JP3747951B2 (ja) 1994-11-07 2006-02-22 株式会社ニコン 反射屈折光学系
JPH09311278A (ja) 1996-05-20 1997-12-02 Nikon Corp 反射屈折光学系
US5636066A (en) 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
JP3635684B2 (ja) 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
US5534970A (en) 1993-06-11 1996-07-09 Nikon Corporation Scanning exposure apparatus
JP3265503B2 (ja) 1993-06-11 2002-03-11 株式会社ニコン 露光方法及び装置
DE69429131T2 (de) 1993-06-18 2002-07-11 Hitachi Maxell Elektrochemisches Element mit flüssigem organischem Elektrolyten
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3395801B2 (ja) 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JPH07335748A (ja) 1994-06-07 1995-12-22 Miyazaki Oki Electric Co Ltd 半導体素子の製造方法
US5715064A (en) * 1994-06-17 1998-02-03 International Business Machines Corporation Step and repeat apparatus having enhanced accuracy and increased throughput
KR0124189B1 (ko) * 1994-07-29 1997-11-25 배순훈 다중광학계를 갖춘 광픽업장치
USRE38438E1 (en) 1994-08-23 2004-02-24 Nikon Corporation Catadioptric reduction projection optical system and exposure apparatus having the same
JPH0883753A (ja) 1994-09-13 1996-03-26 Nikon Corp 焦点検出方法
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JP3387075B2 (ja) 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
DE69604524T2 (de) * 1995-04-25 2000-04-13 Canon Kk Abtastbelichtungsapparat und Belichtungsverfahren unter Verwendung desselben
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5751404A (en) * 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JP3526042B2 (ja) 1995-08-09 2004-05-10 株式会社ニコン 投影露光装置
JPH0954443A (ja) * 1995-08-18 1997-02-25 Nikon Corp 露光方法及び装置
JPH09232213A (ja) 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
US5964441A (en) 1996-04-01 1999-10-12 Lear Corporation Linkage assembly with extruded hole member
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029181B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP4029180B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JP3626504B2 (ja) 1997-03-10 2005-03-09 アーエスエム リソグラフィ ベスローテン フェンノートシャップ 2個の物品ホルダを有する位置決め装置
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
AU9095798A (en) 1997-09-19 1999-04-12 Nikon Corporation Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby
JP2000106340A (ja) 1997-09-26 2000-04-11 Nikon Corp 露光装置及び走査露光方法、並びにステージ装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
AU1175799A (en) 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
JP4264676B2 (ja) * 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
KR20010033118A (ko) * 1997-12-18 2001-04-25 오노 시게오 스테이지 장치 및 노광장치
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
AU5650399A (en) 1998-09-17 2000-04-10 Nikon Corporation Method of adjusting optical projection system
CN1238882C (zh) 1998-12-02 2006-01-25 纽波特公司 试片夹持机械手末端执行器
JP2000187338A (ja) 1998-12-24 2000-07-04 Canon Inc 露光装置およびデバイス製造方法
JP2000216082A (ja) * 1999-01-27 2000-08-04 Nikon Corp ステ―ジ装置および露光装置
KR20020006670A (ko) 1999-03-12 2002-01-24 시마무라 테루오 노광장치 및 노광방법, 그리고 디바이스 제조방법
JP4365934B2 (ja) 1999-05-10 2009-11-18 キヤノン株式会社 露光装置、半導体製造装置およびデバイス製造方法
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI223734B (en) * 1999-12-21 2004-11-11 Asml Netherlands Bv Crash prevention in positioning apparatus for use in lithographic projection apparatus
EP1111471B1 (de) 1999-12-21 2005-11-23 ASML Netherlands B.V. Lithographischer Projektionsapparat mit kollisionsvermeidender Vorrichtung
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2001241439A (ja) 2000-02-25 2001-09-07 Canon Inc 静圧軸受を備えた移動装置
TW546699B (en) 2000-02-25 2003-08-11 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP2001313250A (ja) 2000-02-25 2001-11-09 Nikon Corp 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
US6426790B1 (en) 2000-02-28 2002-07-30 Nikon Corporation Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus
KR100945707B1 (ko) * 2000-02-28 2010-03-05 가부시키가이샤 니콘 스테이지장치와 홀더, 및 주사형 노광장치 그리고 노광장치
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
WO2001084241A1 (en) 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Non-contact seal using purge gas
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP4405071B2 (ja) 2000-10-23 2010-01-27 パナソニック株式会社 送り装置及びそれを具備する光ディスク原盤記録装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002305140A (ja) 2001-04-06 2002-10-18 Nikon Corp 露光装置及び基板処理システム
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
JP2002339853A (ja) * 2001-05-16 2002-11-27 Nissan Motor Co Ltd 充電ステーション
KR100423783B1 (ko) * 2001-06-13 2004-03-22 제일모직주식회사 인조 대리석의 제조 공정
US6788385B2 (en) 2001-06-21 2004-09-07 Nikon Corporation Stage device, exposure apparatus and method
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JPWO2003010802A1 (ja) * 2001-07-26 2004-11-18 株式会社ニコン ステージ装置、露光装置及び露光方法、並びにデバイス製造方法
US6680774B1 (en) 2001-10-09 2004-01-20 Ultratech Stepper, Inc. Method and apparatus for mechanically masking a workpiece
US6665054B2 (en) 2001-10-22 2003-12-16 Nikon Corporation Two stage method
US7134668B2 (en) 2001-10-24 2006-11-14 Ebara Corporation Differential pumping seal apparatus
JP2003249443A (ja) 2001-12-21 2003-09-05 Nikon Corp ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法
KR20040086313A (ko) * 2002-01-29 2004-10-08 가부시키가이샤 니콘 노광장치 및 노광방법
US20050003048A1 (en) * 2002-02-11 2005-01-06 Edizone, Lc Electrolyte-containing orally soluble films
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
TW200305927A (en) * 2002-03-22 2003-11-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
KR101013347B1 (ko) 2002-04-09 2011-02-10 가부시키가이샤 니콘 노광방법, 노광장치, 및 디바이스 제조방법
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
JP4360064B2 (ja) * 2002-06-10 2009-11-11 株式会社ニコン ステージ装置および露光装置
EP1532489A2 (de) 2002-08-23 2005-05-25 Nikon Corporation Optisches projektionssystem, photolithographische methode, belichtungsapparat und belichtungsmethode unter verwendung dieses belichtungsapparats
TW559895B (en) * 2002-09-27 2003-11-01 Taiwan Semiconductor Mfg Exposure system and exposure method thereof
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420300B1 (de) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (de) 2002-11-12 2011-01-05 ASML Netherlands B.V. Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
EP1429190B1 (de) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
JP4701606B2 (ja) * 2002-12-10 2011-06-15 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP4645027B2 (ja) * 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
CN100385535C (zh) 2002-12-19 2008-04-30 皇家飞利浦电子股份有限公司 照射光敏层上斑点的方法和装置
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
JP4604452B2 (ja) * 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR101176817B1 (ko) 2003-04-07 2012-08-24 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR20170064003A (ko) 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
KR101178754B1 (ko) 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
CN106444292A (zh) 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
KR101178756B1 (ko) 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100437358C (zh) * 2003-05-15 2008-11-26 株式会社尼康 曝光装置及器件制造方法
TW201806001A (zh) 2003-05-23 2018-02-16 尼康股份有限公司 曝光裝置及元件製造方法
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
JP2004349645A (ja) 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TWI433212B (zh) 2003-06-19 2014-04-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) * 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1498778A1 (de) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1494074A1 (de) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
KR20060027832A (ko) 2003-07-01 2006-03-28 가부시키가이샤 니콘 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법
EP2843472B1 (de) 2003-07-08 2016-12-07 Nikon Corporation Waferplatte für die Immersionslithografie
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (de) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7309345B2 (en) * 2003-07-25 2007-12-18 Boston Scientific-Scimed, Inc. Method and system for delivering an implant utilizing a lumen reducing member
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP1503244A1 (de) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
CN102323724B (zh) 2003-07-28 2014-08-13 株式会社尼康 液浸曝光装置及其制造方法、曝光装置、器件制造方法
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) * 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101590686B1 (ko) 2003-09-03 2016-02-01 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) * 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1519230A1 (de) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524557A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
EP1524558A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
EP1685446A2 (de) 2003-11-05 2006-08-02 DSM IP Assets B.V. Verfahren und vorrichtung zum herstellen von mikrochips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
EP1531362A3 (de) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Vorrichtung zur Herstellung von Halbleitern und Methode zur Bildung von Mustern
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1695148B1 (de) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersionsobjektiv
DE10355301B3 (de) * 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) * 2003-12-09 2005-06-30 Canon Inc 露光装置
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
JP4308638B2 (ja) * 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2005183656A (ja) * 2003-12-19 2005-07-07 Canon Inc 露光装置
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
DE10360788A1 (de) 2003-12-23 2005-07-28 Marconi Communications Gmbh Optisches Kommunikationsnetz und Komponente dafür
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102830487A (zh) 2004-01-14 2012-12-19 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101799637B (zh) 2004-01-16 2012-07-04 卡尔蔡司Smt有限责任公司 照明光学装置、显微光刻投射系统及装置制造方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US8054947B2 (en) * 2004-02-02 2011-11-08 Eicon Networks Corporation Apparatus and method for multiplexing communication signals
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101276392B1 (ko) 2004-02-03 2013-06-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (de) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung
KR101115111B1 (ko) 2004-02-13 2012-04-16 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈
EP1721201A1 (de) 2004-02-18 2006-11-15 Corning Incorporated Katadioptrisches abbildungssystem zur abbildung mit hoher numerischer apertur mit tief-ultraviolett-licht
JP2005236087A (ja) 2004-02-20 2005-09-02 Nikon Corp 露光装置
JP2005259789A (ja) 2004-03-09 2005-09-22 Nikon Corp 検知システム及び露光装置、デバイス製造方法
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP2005268700A (ja) 2004-03-22 2005-09-29 Nikon Corp ステージ装置及び露光装置
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
JP2005285881A (ja) * 2004-03-29 2005-10-13 Nikon Corp ステージ装置及び露光装置
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (de) 2004-05-04 2007-01-31 Nikon Corporation Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
CN100483174C (zh) 2004-05-17 2009-04-29 卡尔蔡司Smt股份公司 具有中间图像的反射折射投影物镜
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1759248A1 (de) 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projektionssystem mit kompensation von intensitätsschwankungen und kompensationselement dafür
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US7057702B2 (en) 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3919782B2 (ja) * 2004-10-08 2007-05-30 キヤノン株式会社 露光装置及びデバイス製造方法
KR101331631B1 (ko) 2004-10-15 2013-11-20 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7700365B2 (en) * 2004-10-29 2010-04-20 Mayo Foundation For Medical Education And Research Vitamin D deficiencies
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004061462A1 (de) * 2004-12-17 2006-07-06 Delphi Technologies, Inc., Troy Verfahren und Vorrichtung zur Motorsteuerung bei einem Kraftfahrzeug
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
CN102156389A (zh) 2006-05-23 2011-08-17 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
JP4442904B2 (ja) * 2006-07-21 2010-03-31 キヤノン株式会社 露光装置及びデバイス製造方法
JP5304072B2 (ja) 2007-07-18 2013-10-02 ヤマハ株式会社 力覚制御装置、鍵盤楽器、力覚制御方法およびプログラム
TWI452546B (zh) * 2012-12-28 2014-09-11 Univ Chienkuo Technology Hybrid large - scale collapse model

Also Published As

Publication number Publication date
TWI436170B (zh) 2014-05-01
TW200944962A (en) 2009-11-01
JP2016184181A (ja) 2016-10-20
US8736808B2 (en) 2014-05-27
KR20150016413A (ko) 2015-02-11
EP2267759B1 (de) 2014-11-26
EP2287894A3 (de) 2012-11-07
KR20110036121A (ko) 2011-04-06
CN101685263B (zh) 2013-04-17
JP2017151479A (ja) 2017-08-31
HK1217249A1 (zh) 2016-12-30
US20090296067A1 (en) 2009-12-03
JP5287932B2 (ja) 2013-09-11
TWI578114B (zh) 2017-04-11
JP5630557B2 (ja) 2014-11-26
DE602005025596D1 (de) 2011-02-10
KR20120099792A (ko) 2012-09-11
KR101191061B1 (ko) 2012-10-15
EP2980834B1 (de) 2016-10-12
JP2014212330A (ja) 2014-11-13
KR20110137389A (ko) 2011-12-22
US20120212713A1 (en) 2012-08-23
KR20110038140A (ko) 2011-04-13
JP4952803B2 (ja) 2012-06-13
EP2284866B1 (de) 2016-04-20
TWI521312B (zh) 2016-02-11
TW201316142A (zh) 2013-04-16
HK1139469A1 (en) 2010-09-17
US8724079B2 (en) 2014-05-13
JP2015135967A (ja) 2015-07-27
HK1151630A1 (zh) 2012-02-03
US9665016B2 (en) 2017-05-30
TW201535072A (zh) 2015-09-16
KR20140098165A (ko) 2014-08-07
SG195559A1 (en) 2013-12-30
EP2284866A3 (de) 2012-11-07
US7589822B2 (en) 2009-09-15
IL226838A (en) 2015-09-24
EP2287894A2 (de) 2011-02-23
HK1151144A1 (en) 2012-01-20
EP2998982B1 (de) 2017-08-09
TWI437376B (zh) 2014-05-11
EP2960927A3 (de) 2016-03-16
TW200944960A (en) 2009-11-01
IL177221A (en) 2013-07-31
EP2980834A1 (de) 2016-02-03
JP2011097112A (ja) 2011-05-12
JP5488741B2 (ja) 2014-05-14
IL226840A (en) 2015-10-29
IL226839A (en) 2015-10-29
TW200944961A (en) 2009-11-01
KR20180011877A (ko) 2018-02-02
JP5333622B2 (ja) 2013-11-06
EP1713113A1 (de) 2006-10-18
US20090231564A1 (en) 2009-09-17
US20150192865A1 (en) 2015-07-09
US20070247607A1 (en) 2007-10-25
KR101187614B1 (ko) 2012-10-08
KR20170007548A (ko) 2017-01-18
US10139737B2 (en) 2018-11-27
US9684248B2 (en) 2017-06-20
TW201823875A (zh) 2018-07-01
US20070211235A1 (en) 2007-09-13
KR101673826B1 (ko) 2016-11-07
US20090296069A1 (en) 2009-12-03
JP6222301B2 (ja) 2017-11-01
JP4952802B2 (ja) 2012-06-13
TW200537254A (en) 2005-11-16
US20150378267A1 (en) 2015-12-31
KR20150120530A (ko) 2015-10-27
US8705002B2 (en) 2014-04-22
TW201418906A (zh) 2014-05-16
TWI499870B (zh) 2015-09-11
TWI437374B (zh) 2014-05-11
EP2287893A2 (de) 2011-02-23
TWI390358B (zh) 2013-03-21
TW201544916A (zh) 2015-12-01
KR101476015B1 (ko) 2014-12-23
IL226841A0 (en) 2013-07-31
TW200944964A (en) 2009-11-01
TWI437375B (zh) 2014-05-11
TWI564673B (zh) 2017-01-01
TWI627511B (zh) 2018-06-21
ATE493753T1 (de) 2011-01-15
US8547528B2 (en) 2013-10-01
WO2005074014A1 (ja) 2005-08-11
JP2016106257A (ja) 2016-06-16
EP2287894B1 (de) 2016-09-28
KR101276423B1 (ko) 2013-06-19
EP3139401A1 (de) 2017-03-08
HK1219172A1 (zh) 2017-03-24
HK1151631A1 (zh) 2012-02-03
EP2287893B1 (de) 2016-04-20
KR101187616B1 (ko) 2012-10-05
JP4910394B2 (ja) 2012-04-04
IL226840A0 (en) 2013-07-31
KR101276512B1 (ko) 2013-06-24
KR20140002077A (ko) 2014-01-07
JP6052439B2 (ja) 2016-12-27
JP5344061B2 (ja) 2013-11-20
SG185343A1 (en) 2012-11-29
IL177221A0 (en) 2006-12-10
TW200944963A (en) 2009-11-01
JP5930083B2 (ja) 2016-06-08
IL226839A0 (en) 2013-07-31
EP2960927A2 (de) 2015-12-30
JPWO2005074014A1 (ja) 2007-09-13
SG152294A1 (en) 2009-05-29
TWI443475B (zh) 2014-07-01
TW201229690A (en) 2012-07-16
CN101685263A (zh) 2010-03-31
JP2012142603A (ja) 2012-07-26
EP1713113B1 (de) 2010-12-29
KR20110038141A (ko) 2011-04-13
US8711328B2 (en) 2014-04-29
EP2960927B1 (de) 2016-11-16
TWI596440B (zh) 2017-08-21
KR101235523B1 (ko) 2013-02-20
US20190086815A1 (en) 2019-03-21
IL226841A (en) 2015-09-24
US20110051105A1 (en) 2011-03-03
JP2015222427A (ja) 2015-12-10
KR20120099508A (ko) 2012-09-10
HK1221071A1 (zh) 2017-05-19
JP5761430B2 (ja) 2015-08-12
US20110051104A1 (en) 2011-03-03
KR101698290B1 (ko) 2017-01-19
US10007196B2 (en) 2018-06-26
SG185342A1 (en) 2012-11-29
JP2013145918A (ja) 2013-07-25
JP6327385B2 (ja) 2018-05-23
JP5287897B2 (ja) 2013-09-11
EP2998982A1 (de) 2016-03-23
EP2287893A3 (de) 2012-10-31
KR101288139B1 (ko) 2013-07-19
US20110025998A1 (en) 2011-02-03
KR101824373B1 (ko) 2018-01-31
JP2011211222A (ja) 2011-10-20
EP1713113A4 (de) 2007-05-02
JP2010098332A (ja) 2010-04-30
JP2014099631A (ja) 2014-05-29
US9632431B2 (en) 2017-04-25
TWI498680B (zh) 2015-09-01
US20110058149A1 (en) 2011-03-10
EP2284866A2 (de) 2011-02-16
KR101539877B1 (ko) 2015-07-28
KR101187618B1 (ko) 2012-10-08
KR101187615B1 (ko) 2012-10-08
KR20110036122A (ko) 2011-04-06
EP2267759A3 (de) 2012-10-31
KR20110025884A (ko) 2011-03-11
US20070127006A1 (en) 2007-06-07
TW201229689A (en) 2012-07-16
US20100182584A1 (en) 2010-07-22
US8045136B2 (en) 2011-10-25
JP2011124606A (ja) 2011-06-23
KR20120092676A (ko) 2012-08-21
KR101590742B1 (ko) 2016-02-01
JP2010098333A (ja) 2010-04-30
IL226838A0 (en) 2013-07-31
EP2267759A2 (de) 2010-12-29
JP5287896B2 (ja) 2013-09-11
JP5935929B2 (ja) 2016-06-15
JP2012142604A (ja) 2012-07-26
HK1093606A1 (en) 2007-03-02
TW201716884A (zh) 2017-05-16
US8553203B2 (en) 2013-10-08
KR20060120693A (ko) 2006-11-27

Similar Documents

Publication Publication Date Title
SG152294A1 (en) Stage drive method and stage unit, exposure apparatus, and device manufacturing method
SG156635A1 (en) Exposure apparatus and device manufacturing method
WO2009060585A1 (ja) 露光装置及び露光方法、並びにデバイス製造方法
SG157357A1 (en) Exposure apparatus and device fabricating method
TW200511390A (en) Exposure method and exposure apparatus, stage unit, and device manufacturing method
EP1783821A4 (de) Belichtungssystem und bauelementeherstellungsverfahren
EP1783822A4 (de) Belichtungseinrichtung, belichtungseinrichtungs-elementreinigungsverfahren, belichtungseinrichtungs-wartungsverfahren, wartungseinrichtung und einrichtungsherstellungsverfahren
EP1580604A3 (de) Trägerplattenvorrichtung und Belichtungsapparat
EP1653501A4 (de) Belichtungsvorrichtung, bauelemente-herstellungsverfahren und steuerverfahren für eine belichtungsvorrichtung
MY163666A (en) Apparatus and method for processing a substrate
WO2008058671A3 (de) Projektions-vorrichtung mit verbesserter projektionseigenschaft
TW200504858A (en) Printing method and printing apparatus
TW200713032A (en) Methods and apparatus for dynamically switching processor mode
JP2007103649A (ja) エキスパンド装置の制御方法とその制御装置
DE60316747D1 (de) Kühlungsmechanismus für ein elektrisches gesteuertes Teil einer Spritzgiessmaschine sowie Kühlverfahren
TW200632546A (en) A method for manufacturing semiconductor devices using a photo acid generator
WO2003010802A1 (fr) Appareil a etage, systeme et procede d&#39;exposition et procede de production de dispositif
WO2004086840A3 (en) Method of placing at least one component on at least one substrate and apparatus therefore
TW200731020A (en) Methods of semiconductor exposure and controlling the semiconductor exposure apparatus
WO2008139913A1 (ja) 露光方法及び露光用平板