WO2009060585A1 - 露光装置及び露光方法、並びにデバイス製造方法 - Google Patents

露光装置及び露光方法、並びにデバイス製造方法 Download PDF

Info

Publication number
WO2009060585A1
WO2009060585A1 PCT/JP2008/003160 JP2008003160W WO2009060585A1 WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1 JP 2008003160 W JP2008003160 W JP 2008003160W WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
region
exposure
axis direction
wafer stages
Prior art date
Application number
PCT/JP2008/003160
Other languages
English (en)
French (fr)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to CN200880011784.0A priority Critical patent/CN101675500B/zh
Priority to JP2009539947A priority patent/JP4986185B2/ja
Publication of WO2009060585A1 publication Critical patent/WO2009060585A1/ja
Priority to HK10104656.5A priority patent/HK1137077A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　液浸領域（１４）が形成される投影光学系（ＰＬ）の下方の領域に、一方のウエハステージ（ＷＳＴ１）が位置する状態から他方のウエハステージ（ＷＳＴ２）が位置する状態に移行させる際に、両ウエハステージ（ＷＳＴ２，ＷＳＴ１）を、それぞれに設けられた庇部（２３ａ’）と段部（２３ｂ）とを係合させて、Ｘ軸方向に関してずれた状態で、Ｙ軸方向に近接又は接触させ、その状態を維持してＹ軸方向に同時に駆動する。これにより、液浸領域が、庇部を介して２つのウエハステージ間で受け渡し、液浸領域を形成する液体の漏れを抑制する。
PCT/JP2008/003160 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法 WO2009060585A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880011784.0A CN101675500B (zh) 2007-11-07 2008-11-04 曝光装置、曝光方法以及元件制造方法
JP2009539947A JP4986185B2 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法
HK10104656.5A HK1137077A1 (en) 2007-11-07 2010-05-13 Exposure apparatus, exposure method and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289203 2007-11-07
JP2007-289203 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060585A1 true WO2009060585A1 (ja) 2009-05-14

Family

ID=40625493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003160 WO2009060585A1 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法

Country Status (7)

Country Link
US (1) US8797508B2 (ja)
JP (1) JP4986185B2 (ja)
KR (1) KR101470671B1 (ja)
CN (1) CN101675500B (ja)
HK (1) HK1137077A1 (ja)
TW (1) TWI435183B (ja)
WO (1) WO2009060585A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061199A (ja) * 2009-09-11 2011-03-24 Asml Netherlands Bv シャッター部材、リソグラフィ装置及びデバイス製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8760629B2 (en) 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8488109B2 (en) 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US20110096312A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110096306A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110102761A1 (en) * 2009-09-28 2011-05-05 Nikon Corporation Stage apparatus, exposure apparatus, and device fabricating method
US20110096318A1 (en) * 2009-09-28 2011-04-28 Nikon Corporation Exposure apparatus and device fabricating method
US20110128523A1 (en) * 2009-11-19 2011-06-02 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
US20110123913A1 (en) * 2009-11-19 2011-05-26 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US8488106B2 (en) * 2009-12-28 2013-07-16 Nikon Corporation Movable body drive method, movable body apparatus, exposure method, exposure apparatus, and device manufacturing method
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US8779635B2 (en) * 2012-04-10 2014-07-15 Kla-Tencor Corporation Arrangement of reticle positioning device for actinic inspection of EUV reticles
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
JP6649636B2 (ja) 2015-02-23 2020-02-19 株式会社ニコン 計測装置、リソグラフィシステム及び露光装置、並びにデバイス製造方法
CN111610696A (zh) 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
TWI696042B (zh) 2015-02-23 2020-06-11 日商尼康股份有限公司 測量裝置、微影系統及曝光裝置、以及管理方法、重疊測量方法及元件製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332656A (ja) * 2005-05-24 2006-12-07 Asml Netherlands Bv ２ステージ・リソグラフィ装置及びデバイス製造方法
WO2007018127A1 (ja) * 2005-08-05 2007-02-15 Nikon Corporation ステージ装置及び露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007281308A (ja) * 2006-04-10 2007-10-25 Canon Inc 液浸露光装置
JP2008130745A (ja) * 2006-11-20 2008-06-05 Canon Inc 液浸露光装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
SG124257A1 (en) 2000-02-25 2006-08-30 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
JP4714403B2 (ja) 2001-02-27 2011-06-29 エーエスエムエル ユーエス，インコーポレイテッド デュアルレチクルイメージを露光する方法および装置
JP2002280283A (ja) * 2001-03-16 2002-09-27 Canon Inc 基板処理装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
TWI293475B (en) * 2001-11-30 2008-02-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG2010050110A (en) 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101562447B1 (ko) 2003-02-26 2015-10-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20180054929A (ko) 2003-04-11 2018-05-24 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
KR101419663B1 (ko) 2003-06-19 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2005317916A (ja) 2004-03-30 2005-11-10 Canon Inc 露光装置及びデバイス製造方法
EP1806772B1 (en) 2004-10-15 2014-08-06 Nikon Corporation Exposure apparatus and device manufacturing method
US20060092399A1 (en) * 2004-10-29 2006-05-04 Asml Netherlands B.V. Lithographic apparatus, a control system for controlling a lithographic apparatus, and a device manufacturing method
US7515281B2 (en) 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161659B2 (en) * 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
EP3270226A1 (en) 2006-02-21 2018-01-17 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
EP2541325B1 (en) * 2006-02-21 2018-02-21 Nikon Corporation Exposure apparatus and exposure method
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
JP5120377B2 (ja) * 2006-09-29 2013-01-16 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2008124194A (ja) * 2006-11-10 2008-05-29 Canon Inc 液浸露光方法および液浸露光装置
JP2008124219A (ja) 2006-11-10 2008-05-29 Canon Inc 液浸露光装置
US20080158531A1 (en) 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332656A (ja) * 2005-05-24 2006-12-07 Asml Netherlands Bv ２ステージ・リソグラフィ装置及びデバイス製造方法
WO2007018127A1 (ja) * 2005-08-05 2007-02-15 Nikon Corporation ステージ装置及び露光装置
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007281308A (ja) * 2006-04-10 2007-10-25 Canon Inc 液浸露光装置
JP2008130745A (ja) * 2006-11-20 2008-06-05 Canon Inc 液浸露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061199A (ja) * 2009-09-11 2011-03-24 Asml Netherlands Bv シャッター部材、リソグラフィ装置及びデバイス製造方法
US8599356B2 (en) 2009-09-11 2013-12-03 Asml Netherlands B.V. Shutter member, a lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
CN101675500B (zh) 2011-05-18
KR101470671B1 (ko) 2014-12-08
US8797508B2 (en) 2014-08-05
US20090225288A1 (en) 2009-09-10
HK1137077A1 (en) 2010-07-16
JP4986185B2 (ja) 2012-07-25
KR20100085833A (ko) 2010-07-29
JPWO2009060585A1 (ja) 2011-03-17
CN101675500A (zh) 2010-03-17
TWI435183B (zh) 2014-04-21
TW200935184A (en) 2009-08-16

Similar Documents

Publication Publication Date Title
WO2009060585A1 (ja) 露光装置及び露光方法、並びにデバイス製造方法
HK1219172A1 (zh) 曝光設備、曝光方法以及裝置製造方法
WO2004068542A3 (en) Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
WO2005031799A3 (ja) 露光装置、露光方法及びデバイス製造方法
ATE476677T1 (en) Method for manufacturing multilayer cholesteric liquid crystal optical bodies
PH12013500600B1 (en) Polarizing photochromic devices and methods of making the same
TW200508806A (en) Polyamide acid-containing composition for forming anti-reflective film
EP1632991A4 (en) EXPOSURE METHOD, EXPOSURE DEVICE, AND METHOD OF MANUFACTURING THE DEVICE
SG170060A1 (en) Exposure apparatus, exposure method, and device production method
TW200611082A (en) Exposure system and device production method
WO2005001572A3 (en) Lithographic apparatus and device manufacturing method
WO2009104899A3 (en) Method of etching asymmetric wafer, solar cell including the asymmetrically etched wafer, and method of manufacturing the same
WO2005024520A3 (en) Phototool coating
WO2008084658A1 (ja) 半導体装置の製造方法、半導体製造装置及び記憶媒体
EP4280025A3 (en) Foldable display device
WO2011049326A3 (en) Patterned retardation film and method for manufacturing the same
TW200717039A (en) Reflector, optical element, interferometer system, stage device, exposure apparatus, and device fabricating method
Argoud et al. 300mm pilot line DSA contact hole process stability
TW200622498A (en) Sublayer anti-reflective coating-forming composition containing aromatic sulfonate compound and photo acid generator
WO2005010949A3 (en) Solution to thermal budget
WO2007021403A3 (en) Low-temperature oxide removal using fluorine
WO2005006034A3 (en) Alignment facilities for optical dyes
WO2008077012A3 (en) Multi-step photomask etching with chlorine for uniformity control
TW200739285A (en) Pattern forming method, pattern forming apparatus, exposure method, exposure apparatus and device manufacturing method
WO2009142947A3 (en) Helium descumming

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880011784.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08847013

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097025768

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2009539947

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08847013

Country of ref document: EP

Kind code of ref document: A1