WO2008084658A1 - 半導体装置の製造方法、半導体製造装置及び記憶媒体 - Google Patents

半導体装置の製造方法、半導体製造装置及び記憶媒体 Download PDF

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Publication number
WO2008084658A1
WO2008084658A1 PCT/JP2007/074669 JP2007074669W WO2008084658A1 WO 2008084658 A1 WO2008084658 A1 WO 2008084658A1 JP 2007074669 W JP2007074669 W JP 2007074669W WO 2008084658 A1 WO2008084658 A1 WO 2008084658A1
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semiconductor
storage medium
substrate
bubbles
semiconductor device
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PCT/JP2007/074669
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English (en)
French (fr)
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Sumie Segawa
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Tokyo Electron Limited
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Priority to CN2007800206642A priority Critical patent/CN101461041B/zh
Priority to KR1020097014359A priority patent/KR101063088B1/ko
Priority to US12/522,772 priority patent/US8242026B2/en
Publication of WO2008084658A1 publication Critical patent/WO2008084658A1/ja

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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract

　本発明は、開口による所定のパターンが形成された基板（Ｗ）に対して、エッチング処理または成膜処理を行う方法に関するものであり、少なくとも一方がエッチング処理または成膜処理に関与する成分を含む液体及び気体を混合して、前記基板（Ｗ）に形成された前記開口の寸法よりも小径からなる帯電したナノバブル（８５）を前記液体中に発生させる工程と、前記ナノバブル（８５）を前記基板（Ｗ）の表面に引き込むための電界を形成する工程と、前記電界を形成しながら前記ナノバブル（８５）を含む液体を前記基板に供給して処理を行う工程とを備えている。
PCT/JP2007/074669 2007-01-10 2007-12-21 半導体装置の製造方法、半導体製造装置及び記憶媒体 WO2008084658A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800206642A CN101461041B (zh) 2007-01-10 2007-12-21 半导体装置的制造方法和半导体制造装置
KR1020097014359A KR101063088B1 (ko) 2007-01-10 2007-12-21 반도체 장치의 제조 방법, 반도체 제조 장치 및 기억 매체
US12/522,772 US8242026B2 (en) 2007-01-10 2007-12-21 Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007002733A JP5023705B2 (ja) 2007-01-10 2007-01-10 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2007-002733 2007-01-10

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WO2008084658A1 true WO2008084658A1 (ja) 2008-07-17

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US (1) US8242026B2 (ja)
JP (1) JP5023705B2 (ja)
KR (1) KR101063088B1 (ja)
CN (1) CN101461041B (ja)
WO (1) WO2008084658A1 (ja)

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JP6029537B2 (ja) * 2013-05-14 2016-11-24 株式会社ハイビック平田 ワークの表面処理装置及び処理方法
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CN103903977A (zh) * 2014-03-20 2014-07-02 武汉新芯集成电路制造有限公司 一种刻蚀方法
EP3188849B1 (en) 2014-09-05 2022-02-16 Tennant Company Systems and methods for supplying treatment liquids having nanobubbles
JP6541492B2 (ja) * 2015-07-29 2019-07-10 東京エレクトロン株式会社 液処理方法および液処理装置
JP7412340B2 (ja) * 2017-10-23 2024-01-12 ラム・リサーチ・アーゲー 高アスペクト比構造のスティクションを防ぐためのシステムおよび方法、および／または、高アスペクト比の構造を修復するためのシステムおよび方法
CN108417490B (zh) * 2018-03-15 2021-01-19 京东方科技集团股份有限公司 蚀刻金属工件的方法和显示面板的制作方法
JP7406748B2 (ja) 2019-06-12 2023-12-28 国立大学法人九州工業大学 化学メッキ法
JP7355566B2 (ja) * 2019-09-11 2023-10-03 株式会社荏原製作所 めっき処理装置、前処理装置、めっき装置、めっき処理方法および前処理方法
KR102298084B1 (ko) 2019-12-31 2021-09-03 세메스 주식회사 액 공급 유닛, 기판 처리 장치 및 기판 처리 방법
JP7398292B2 (ja) * 2020-02-10 2023-12-14 株式会社荏原製作所 めっき方法
KR102622445B1 (ko) * 2020-04-24 2024-01-09 세메스 주식회사 기판 처리 장치 및 액 공급 방법
JP7484865B2 (ja) 2021-10-14 2024-05-16 トヨタ自動車株式会社 金属皮膜の成膜装置および金属皮膜の成膜方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021085579A1 (ja) * 2019-10-31 2021-05-06 キヤノン株式会社 ウルトラファインバブルを含有するウルトラファインバブル含有液を生成する生成方法、ウルトラファインバブルを含有する液体の製造装置

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KR20090097920A (ko) 2009-09-16
CN101461041B (zh) 2010-08-18
JP2008171956A (ja) 2008-07-24
US20100003807A1 (en) 2010-01-07
US8242026B2 (en) 2012-08-14
KR101063088B1 (ko) 2011-09-07
CN101461041A (zh) 2009-06-17

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