WO2008084658A1 - 半導体装置の製造方法、半導体製造装置及び記憶媒体 - Google Patents
半導体装置の製造方法、半導体製造装置及び記憶媒体 Download PDFInfo
- Publication number
- WO2008084658A1 WO2008084658A1 PCT/JP2007/074669 JP2007074669W WO2008084658A1 WO 2008084658 A1 WO2008084658 A1 WO 2008084658A1 JP 2007074669 W JP2007074669 W JP 2007074669W WO 2008084658 A1 WO2008084658 A1 WO 2008084658A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- storage medium
- substrate
- bubbles
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002101 nanobubble Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1666—Ultrasonics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1671—Electric field
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/003—Electroplating using gases, e.g. pressure influence
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
- C23C18/405—Formaldehyde
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097014359A KR101063088B1 (ko) | 2007-01-10 | 2007-12-21 | 반도체 장치의 제조 방법, 반도체 제조 장치 및 기억 매체 |
CN2007800206642A CN101461041B (zh) | 2007-01-10 | 2007-12-21 | 半导体装置的制造方法和半导体制造装置 |
US12/522,772 US8242026B2 (en) | 2007-01-10 | 2007-12-21 | Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-002733 | 2007-01-10 | ||
JP2007002733A JP5023705B2 (ja) | 2007-01-10 | 2007-01-10 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008084658A1 true WO2008084658A1 (ja) | 2008-07-17 |
Family
ID=39608555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074669 WO2008084658A1 (ja) | 2007-01-10 | 2007-12-21 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8242026B2 (ja) |
JP (1) | JP5023705B2 (ja) |
KR (1) | KR101063088B1 (ja) |
CN (1) | CN101461041B (ja) |
WO (1) | WO2008084658A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021085579A1 (ja) * | 2019-10-31 | 2021-05-06 | キヤノン株式会社 | ウルトラファインバブルを含有するウルトラファインバブル含有液を生成する生成方法、ウルトラファインバブルを含有する液体の製造装置 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5104151B2 (ja) * | 2007-09-18 | 2012-12-19 | 東京エレクトロン株式会社 | 気化装置、成膜装置、成膜方法及び記憶媒体 |
JP5408982B2 (ja) * | 2008-12-09 | 2014-02-05 | 芝浦メカトロニクス株式会社 | 基板の帯電除去装置及び帯電除去方法 |
EP2360294B1 (de) * | 2010-02-12 | 2013-05-15 | Atotech Deutschland GmbH | Verfahren zum Metallisieren von an der Oberfläche mindestens zwei verschiedene Kunststoffe aufweisenden Gegenständen |
US9869392B2 (en) | 2011-10-20 | 2018-01-16 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9859142B2 (en) | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
JP6029537B2 (ja) * | 2013-05-14 | 2016-11-24 | 株式会社ハイビック平田 | ワークの表面処理装置及び処理方法 |
US10090211B2 (en) | 2013-12-26 | 2018-10-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9431262B2 (en) * | 2014-03-14 | 2016-08-30 | Fujikoshi Machinery Corp. | Method for polishing work and work polishing apparatus |
CN103903977A (zh) * | 2014-03-20 | 2014-07-02 | 武汉新芯集成电路制造有限公司 | 一种刻蚀方法 |
WO2016037073A2 (en) | 2014-09-05 | 2016-03-10 | Tennant Company | Systems and methods for supplying treatment liquids having nanobubbles |
JP6541492B2 (ja) * | 2015-07-29 | 2019-07-10 | 東京エレクトロン株式会社 | 液処理方法および液処理装置 |
KR20200063242A (ko) * | 2017-10-23 | 2020-06-04 | 램 리서치 아게 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
CN108417490B (zh) * | 2018-03-15 | 2021-01-19 | 京东方科技集团股份有限公司 | 蚀刻金属工件的方法和显示面板的制作方法 |
JP7406748B2 (ja) * | 2019-06-12 | 2023-12-28 | 国立大学法人九州工業大学 | 化学メッキ法 |
JP7355566B2 (ja) * | 2019-09-11 | 2023-10-03 | 株式会社荏原製作所 | めっき処理装置、前処理装置、めっき装置、めっき処理方法および前処理方法 |
KR102298084B1 (ko) | 2019-12-31 | 2021-09-03 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치 및 기판 처리 방법 |
JP7398292B2 (ja) * | 2020-02-10 | 2023-12-14 | 株式会社荏原製作所 | めっき方法 |
KR102622445B1 (ko) | 2020-04-24 | 2024-01-09 | 세메스 주식회사 | 기판 처리 장치 및 액 공급 방법 |
US20220080373A1 (en) * | 2020-09-14 | 2022-03-17 | Changxin Memory Technologies, Inc. | Monitoring feedback system and monitoring feedback method |
JP7484865B2 (ja) | 2021-10-14 | 2024-05-16 | トヨタ自動車株式会社 | 金属皮膜の成膜装置および金属皮膜の成膜方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2003086615A1 (fr) * | 2002-04-01 | 2003-10-23 | Techno Network Shikoku Co., Ltd. | Generateur de plasma immerge, procede de generation de plasma en liquide et procede de decomposition de substance toxique avec du plasma en liquide |
JP2004121962A (ja) * | 2002-10-01 | 2004-04-22 | National Institute Of Advanced Industrial & Technology | ナノバブルの利用方法及び装置 |
JP2006147617A (ja) * | 2004-11-16 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびパーティクル除去方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6209855B1 (en) * | 1999-05-10 | 2001-04-03 | Canzone Limited | Gas/liquid mixing apparatus and method |
JP4144669B2 (ja) | 2004-03-05 | 2008-09-03 | 独立行政法人産業技術総合研究所 | ナノバブルの製造方法 |
US7981286B2 (en) | 2004-09-15 | 2011-07-19 | Dainippon Screen Mfg Co., Ltd. | Substrate processing apparatus and method of removing particles |
JP4088630B2 (ja) * | 2005-02-28 | 2008-05-21 | シャープ株式会社 | 排水処理装置 |
-
2007
- 2007-01-10 JP JP2007002733A patent/JP5023705B2/ja not_active Expired - Fee Related
- 2007-12-21 WO PCT/JP2007/074669 patent/WO2008084658A1/ja active Application Filing
- 2007-12-21 US US12/522,772 patent/US8242026B2/en not_active Expired - Fee Related
- 2007-12-21 CN CN2007800206642A patent/CN101461041B/zh not_active Expired - Fee Related
- 2007-12-21 KR KR1020097014359A patent/KR101063088B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003086615A1 (fr) * | 2002-04-01 | 2003-10-23 | Techno Network Shikoku Co., Ltd. | Generateur de plasma immerge, procede de generation de plasma en liquide et procede de decomposition de substance toxique avec du plasma en liquide |
JP2004121962A (ja) * | 2002-10-01 | 2004-04-22 | National Institute Of Advanced Industrial & Technology | ナノバブルの利用方法及び装置 |
JP2006147617A (ja) * | 2004-11-16 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびパーティクル除去方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021085579A1 (ja) * | 2019-10-31 | 2021-05-06 | キヤノン株式会社 | ウルトラファインバブルを含有するウルトラファインバブル含有液を生成する生成方法、ウルトラファインバブルを含有する液体の製造装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20090097920A (ko) | 2009-09-16 |
US20100003807A1 (en) | 2010-01-07 |
JP5023705B2 (ja) | 2012-09-12 |
JP2008171956A (ja) | 2008-07-24 |
CN101461041A (zh) | 2009-06-17 |
KR101063088B1 (ko) | 2011-09-07 |
US8242026B2 (en) | 2012-08-14 |
CN101461041B (zh) | 2010-08-18 |
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