PL3361512T3 - Tranzystory kolumny IV do integracji PMOS - Google Patents

Tranzystory kolumny IV do integracji PMOS

Info

Publication number
PL3361512T3
PL3361512T3 PL18164957T PL18164957T PL3361512T3 PL 3361512 T3 PL3361512 T3 PL 3361512T3 PL 18164957 T PL18164957 T PL 18164957T PL 18164957 T PL18164957 T PL 18164957T PL 3361512 T3 PL3361512 T3 PL 3361512T3
Authority
PL
Poland
Prior art keywords
transistors
column
pmos
integration
pmos integration
Prior art date
Application number
PL18164957T
Other languages
English (en)
Inventor
Glenn A. Glass
Anand S. Murthy
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Publication of PL3361512T3 publication Critical patent/PL3361512T3/pl

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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PCT/US2011/066129 WO2012088097A2 (en) 2010-12-21 2011-12-20 Column iv transistors for pmos integration
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Families Citing this family (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994104B2 (en) 1999-09-28 2015-03-31 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US9484432B2 (en) 2010-12-21 2016-11-01 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US8901537B2 (en) 2010-12-21 2014-12-02 Intel Corporation Transistors with high concentration of boron doped germanium
JP5824137B2 (ja) 2011-04-15 2015-11-25 アディティア ビルラ サイエンス アンド テクノロジー カンパニー リミテッド 硫化ナトリウムの分離及び精製方法
US9012283B2 (en) * 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US20120309171A1 (en) * 2011-05-30 2012-12-06 Tsuo-Wen Lu Method for fabricating semiconductor device
US8946064B2 (en) 2011-06-16 2015-02-03 International Business Machines Corporation Transistor with buried silicon germanium for improved proximity control and optimized recess shape
US9873797B2 (en) 2011-10-24 2018-01-23 Aditya Birla Nuvo Limited Process for the production of carbon black
US9006069B2 (en) 2011-12-19 2015-04-14 Intel Corporation Pulsed laser anneal process for transistors with partial melt of a raised source-drain
US9263342B2 (en) * 2012-03-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a strained region
ES2733444T3 (es) 2012-03-30 2019-11-29 Aditya Birla Science And Tech Company Private Limited Un procedimiento para obtener polvo de negro de carbón con contenido reducido de azufre
US20130313655A1 (en) * 2012-05-23 2013-11-28 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device and a method for manufacturing the same
US20140004677A1 (en) * 2012-06-29 2014-01-02 GlobalFoundries, Inc. High-k Seal for Protection of Replacement Gates
US9136383B2 (en) 2012-08-09 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
EP2696369B1 (en) * 2012-08-10 2021-01-13 IMEC vzw Methods for manufacturing a field-effect semiconductor device
EP2704199B1 (en) * 2012-09-03 2020-01-01 IMEC vzw Method of manufacturing a semiconductor device
US9105490B2 (en) 2012-09-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
US9287138B2 (en) 2012-09-27 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET low resistivity contact formation method
US8823065B2 (en) 2012-11-08 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of semiconductor device
CN103811349A (zh) * 2012-11-06 2014-05-21 中国科学院微电子研究所 半导体结构及其制造方法
US8809139B2 (en) 2012-11-29 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-last FinFET and methods of forming same
KR101983633B1 (ko) 2012-11-30 2019-05-29 삼성전자 주식회사 반도체 장치 및 그 제조 방법
CN109216181A (zh) 2012-11-30 2019-01-15 中国科学院微电子研究所 鳍结构制造方法
US8748940B1 (en) 2012-12-17 2014-06-10 Intel Corporation Semiconductor devices with germanium-rich active layers and doped transition layers
WO2014107608A1 (en) 2013-01-04 2014-07-10 Carbo Ceramics Inc. Electrically conductive proppant and methods for detecting, locating and characterizing the electrically conductive proppant
US11008505B2 (en) 2013-01-04 2021-05-18 Carbo Ceramics Inc. Electrically conductive proppant
US8802512B2 (en) * 2013-01-11 2014-08-12 International Business Machines Corporation Overlap capacitance nanowire
US9184233B2 (en) * 2013-02-27 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for defect passivation to reduce junction leakage for finFET device
US8889540B2 (en) * 2013-02-27 2014-11-18 International Business Machines Corporation Stress memorization in RMG FinFets
US8940640B2 (en) 2013-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain structure of semiconductor device
US20140273365A1 (en) * 2013-03-13 2014-09-18 Globalfoundries Inc. Methods of forming contacts to source/drain regions of finfet devices by forming a region that includes a schottky barrier lowering material
US9117842B2 (en) 2013-03-13 2015-08-25 Globalfoundries Inc. Methods of forming contacts to source/drain regions of FinFET devices
JP2014222723A (ja) * 2013-05-14 2014-11-27 独立行政法人産業技術総合研究所 電界効果型半導体装置及びその製造方法
US9034741B2 (en) 2013-05-31 2015-05-19 International Business Machines Corporation Halo region formation by epitaxial growth
KR20150012837A (ko) * 2013-07-26 2015-02-04 에스케이하이닉스 주식회사 3차원 수평 채널을 갖는 반도체 장치 및 그 제조방법
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
US10147793B2 (en) 2013-07-30 2018-12-04 Samsung Electronics Co., Ltd. FinFET devices including recessed source/drain regions having optimized depths
US9685509B2 (en) * 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9401274B2 (en) * 2013-08-09 2016-07-26 Taiwan Semiconductor Manufacturing Company Limited Methods and systems for dopant activation using microwave radiation
WO2015047341A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Non-planar semiconductor devices having multi-layered compliant substrates
US10229853B2 (en) 2013-09-27 2019-03-12 Intel Corporation Non-planar I/O and logic semiconductor devices having different workfunction on common substrate
WO2015047317A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Semiconductor device having group iii-v material active region and graded gate dielectric
CN104681535B (zh) * 2013-11-29 2017-09-29 台湾积体电路制造股份有限公司 半导体器件的接触件结构
US9159811B2 (en) 2013-12-18 2015-10-13 International Business Machines Corporation Growing buffer layers in bulk finFET structures
EP3084835A4 (en) * 2013-12-18 2017-08-02 Intel Corporation Techniques for improving gate control over transistor channel by increasing effective gate length
US9691898B2 (en) 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US9842928B2 (en) * 2013-12-23 2017-12-12 Intel Corporation Tensile source drain III-V transistors for mobility improved n-MOS
CN110610866B (zh) 2013-12-27 2023-05-30 英特尔公司 扩散的尖端延伸晶体管
US9496398B2 (en) * 2014-01-15 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial source/drain regions in FinFETs and methods for forming the same
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
US10164107B2 (en) * 2014-01-24 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with laterally extended portion
US9236397B2 (en) * 2014-02-04 2016-01-12 Globalfoundries Inc. FinFET device containing a composite spacer structure
US9287398B2 (en) 2014-02-14 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor strain-inducing scheme
US9379214B2 (en) * 2014-02-14 2016-06-28 Semi Solutions Llc Reduced variation MOSFET using a drain-extension-last process
US9147683B2 (en) * 2014-02-18 2015-09-29 International Business Machines Corporation CMOS transistors including gate spacers of the same thickness
WO2015127363A1 (en) 2014-02-21 2015-08-27 Samsung Electronics, Co., Ltd. Integrated circuit devices including contacts and methods of forming the same
EP3120388A4 (en) 2014-03-21 2017-11-29 Intel Corporation Techniques for integration of ge-rich p-mos source/drain contacts
US9653461B2 (en) * 2014-03-28 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with low source/drain contact resistance
US9324867B2 (en) 2014-05-19 2016-04-26 International Business Machines Corporation Method to controllably etch silicon recess for ultra shallow junctions
US9502538B2 (en) 2014-06-12 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd Structure and formation method of fin-like field effect transistor
US9490365B2 (en) * 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
CN106463416A (zh) * 2014-06-13 2017-02-22 英特尔公司 用于晶圆键合的表面包封
US20150372107A1 (en) * 2014-06-18 2015-12-24 Stmicroelectronics, Inc. Semiconductor devices having fins, and methods of forming semiconductor devices having fins
EP3158586A4 (en) 2014-06-20 2018-01-17 Intel Corporation Monolithic integration of high voltage transistors&low voltage non-planar transistors
US10084063B2 (en) * 2014-06-23 2018-09-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US9406782B2 (en) * 2014-06-27 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device
KR102155327B1 (ko) 2014-07-07 2020-09-11 삼성전자주식회사 전계 효과 트랜지스터 및 그 제조 방법
US9893183B2 (en) * 2014-07-10 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
KR102216511B1 (ko) 2014-07-22 2021-02-18 삼성전자주식회사 반도체 소자
US9269777B2 (en) * 2014-07-23 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain structures and methods of forming same
KR102219295B1 (ko) 2014-07-25 2021-02-23 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
JP6529992B2 (ja) * 2014-07-25 2019-06-12 インテル・コーポレーション 半導体デバイスにおけるタングステン合金
US9202919B1 (en) * 2014-07-31 2015-12-01 Stmicroelectronics, Inc. FinFETs and techniques for controlling source and drain junction profiles in finFETs
KR102264542B1 (ko) * 2014-08-04 2021-06-14 삼성전자주식회사 반도체 장치 제조 방법
JP6376574B2 (ja) * 2014-08-05 2018-08-22 インテル・コーポレーション 触媒酸化物の形成によって生成されたマイクロ電子デバイス分離を含む非プレーナトランジスタ、システム、および非プレーナトランジスタを製造する方法
US9679990B2 (en) * 2014-08-08 2017-06-13 Globalfoundries Inc. Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication
CN105470293B (zh) * 2014-08-28 2020-06-02 联华电子股份有限公司 半导体元件及其制作方法
EP3192101A4 (en) * 2014-09-09 2018-05-23 Intel Corporation Multi-gate high electron mobility transistors and methods of fabrication
KR102230198B1 (ko) 2014-09-23 2021-03-19 삼성전자주식회사 반도체 소자 및 이의 제조 방법
KR102259080B1 (ko) 2014-09-23 2021-06-03 삼성전자주식회사 반도체 소자 및 그 제조방법
US20160086805A1 (en) * 2014-09-24 2016-03-24 Qualcomm Incorporated Metal-gate with an amorphous metal layer
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
US9978854B2 (en) 2014-11-19 2018-05-22 United Microelectronics Corporation Fin field-effect transistor
TWI696290B (zh) * 2014-11-26 2020-06-11 南韓商三星電子股份有限公司 半導體元件、電子元件及電子元件端子結構
US10243080B2 (en) * 2014-12-19 2019-03-26 Intel Corporation Selective deposition utilizing sacrificial blocking layers for semiconductor devices
US11205707B2 (en) 2014-12-22 2021-12-21 Intel Corporation Optimizing gate profile for performance and gate fill
US9508602B2 (en) * 2015-01-09 2016-11-29 Globalfoundries Inc. Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structure
US9397214B1 (en) * 2015-02-16 2016-07-19 United Microelectronics Corp. Semiconductor device
US9397161B1 (en) 2015-02-26 2016-07-19 International Business Machines Corporation Reduced current leakage semiconductor device
KR20160111220A (ko) * 2015-03-16 2016-09-26 엘지전자 주식회사 전기제품, 전기제품의 펌웨어 업데이트 방법 및 네트워크 시스템
US10008568B2 (en) * 2015-03-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
CN106158747B (zh) * 2015-03-30 2020-03-10 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102432268B1 (ko) 2015-04-14 2022-08-12 삼성전자주식회사 반도체 소자 및 그 제조 방법.
DE102015106397B4 (de) * 2015-04-16 2019-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren und Systeme zur Dotierstoffaktivierung mithilfe von Mikrowellenbestrahlung
CN104821336B (zh) * 2015-04-20 2017-12-12 上海华力微电子有限公司 用于使用保形填充层改善器件表面均匀性的方法和系统
KR102400375B1 (ko) 2015-04-30 2022-05-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10504721B2 (en) * 2015-04-30 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Staggered-type tunneling field effect transistor
US9954107B2 (en) 2015-05-05 2018-04-24 International Business Machines Corporation Strained FinFET source drain isolation
KR102395071B1 (ko) 2015-05-14 2022-05-10 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자
US9741829B2 (en) 2015-05-15 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US20180151732A1 (en) * 2015-06-19 2018-05-31 Intel Corporation Resistance reduction in transistors having epitaxially grown source/drain regions
US9449885B1 (en) 2015-06-19 2016-09-20 International Business Machines Corporation High germanium content FinFET devices having the same contact material for nFET and pFET devices
EP3311417A4 (en) * 2015-06-19 2019-01-16 Intel Corporation CARBON-BASED INTERFACE FOR EPITAXIAL GROWTH SOURCE / DRAIN TRANSISTOR REGIONS
US9806194B2 (en) * 2015-07-15 2017-10-31 Samsung Electronics Co., Ltd. FinFET with fin having different Ge doped region
US9484417B1 (en) * 2015-07-22 2016-11-01 Globalfoundries Inc. Methods of forming doped transition regions of transistor structures
US9484431B1 (en) * 2015-07-29 2016-11-01 International Business Machines Corporation Pure boron for silicide contact
US10026837B2 (en) * 2015-09-03 2018-07-17 Texas Instruments Incorporated Embedded SiGe process for multi-threshold PMOS transistors
US10103249B2 (en) 2015-09-10 2018-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device and method for fabricating the same
CN106548940A (zh) * 2015-09-16 2017-03-29 联华电子股份有限公司 半导体元件及其制作方法
US9607838B1 (en) * 2015-09-18 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced channel strain to reduce contact resistance in NMOS FET devices
US9484412B1 (en) 2015-09-23 2016-11-01 International Business Machines Corporation Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same
US9812571B2 (en) 2015-09-30 2017-11-07 International Business Machines Corporation Tensile strained high percentage silicon germanium alloy FinFETs
US9947755B2 (en) 2015-09-30 2018-04-17 International Business Machines Corporation III-V MOSFET with self-aligned diffusion barrier
US9793400B2 (en) 2015-10-12 2017-10-17 International Business Machines Corporation Semiconductor device including dual-layer source/drain region
CN116825818A (zh) * 2015-11-12 2023-09-29 蓝枪半导体有限责任公司 栅极全包覆式纳米线场效晶体管装置
US9899387B2 (en) * 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
US10794872B2 (en) 2015-11-16 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Acoustic measurement of fabrication equipment clearance
US10586866B2 (en) 2015-12-09 2020-03-10 Intel Corporation Stressors for compressively strained GaN p-channel
US10079302B2 (en) * 2015-12-28 2018-09-18 International Business Machines Corporation Silicon germanium fin immune to epitaxy defect
US10490552B2 (en) * 2015-12-29 2019-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device having flat-top epitaxial features and method of making the same
DE102016119024B4 (de) 2015-12-29 2023-12-21 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum Herstellen einer FinFET-Vorrichtung mit epitaktischen Elementen mit flacher Oberseite
KR102532202B1 (ko) 2016-01-22 2023-05-12 삼성전자 주식회사 반도체 소자
US9634142B1 (en) 2016-03-22 2017-04-25 Globalfoundries Inc. Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing
CN107369644B (zh) 2016-05-12 2021-11-02 联华电子股份有限公司 半导体元件及其制作方法
JP6606020B2 (ja) * 2016-06-15 2019-11-13 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
US10903364B2 (en) * 2016-07-02 2021-01-26 Intel Corporation Semiconductor device with released source and drain
US10128187B2 (en) 2016-07-11 2018-11-13 Globalfoundries Inc. Integrated circuit structure having gate contact and method of forming same
CN107785313B (zh) * 2016-08-26 2021-06-08 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11088033B2 (en) * 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
KR102302000B1 (ko) * 2016-09-15 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 콘택 집적 및 선택적 실리사이드 형성 방법들
US10217707B2 (en) 2016-09-16 2019-02-26 International Business Machines Corporation Trench contact resistance reduction
KR102253546B1 (ko) * 2016-09-19 2021-05-18 어플라이드 머티어리얼스, 인코포레이티드 도핑된 게르마늄 형성 방법
JP6724685B2 (ja) * 2016-09-23 2020-07-15 住友電気工業株式会社 半導体装置
US10326019B2 (en) * 2016-09-26 2019-06-18 International Business Machines Corporation Fully-depleted CMOS transistors with U-shaped channel
WO2018063192A1 (en) 2016-09-28 2018-04-05 Intel Corporation Transistors with lattice matched gate structure
US11004954B2 (en) 2016-09-30 2021-05-11 Intel Corporation Epitaxial buffer to reduce sub-channel leakage in MOS transistors
CN109075204B (zh) * 2016-10-12 2021-11-05 京东方科技集团股份有限公司 薄膜晶体管、具有该薄膜晶体管的阵列基板、显示面板和显示装置、及其制造方法
EP3312883B1 (en) * 2016-10-19 2021-12-29 IMEC vzw Semiconductor devices with increased charge carrier concentration
US9917060B1 (en) 2016-10-21 2018-03-13 International Business Machines Corporation Forming a contact for a semiconductor device
US9865730B1 (en) * 2016-10-31 2018-01-09 International Business Machines Corporation VTFET devices utilizing low temperature selective epitaxy
US10312096B2 (en) 2016-12-12 2019-06-04 Applied Materials, Inc. Methods for titanium silicide formation using TiCl4 precursor and silicon-containing precursor
US10049936B2 (en) 2016-12-15 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same
US11476349B2 (en) * 2016-12-15 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10062692B1 (en) 2017-02-27 2018-08-28 Globalfoundries Inc. Field effect transistors with reduced parasitic resistances and method
US11605556B2 (en) 2017-03-30 2023-03-14 Intel Corporation Back side processing of integrated circuit structures to form insulation structure between adjacent transistor structures
WO2018182749A1 (en) * 2017-04-01 2018-10-04 Intel Corporation Germanium-rich channel transistors including one or more dopant diffusion barrier elements
US9984937B1 (en) * 2017-04-20 2018-05-29 International Business Machines Corporation Vertical silicon/silicon-germanium transistors with multiple threshold voltages
CN108962754B (zh) * 2017-05-19 2021-11-30 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10043893B1 (en) 2017-08-03 2018-08-07 Globalfoundries Inc. Post gate silicon germanium channel condensation and method for producing the same
KR102391512B1 (ko) 2017-08-17 2022-04-27 삼성전자주식회사 반도체 소자
CN109427582B (zh) * 2017-08-22 2021-09-07 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10522680B2 (en) 2017-08-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet semiconductor device structure with capped source drain structures
KR102379707B1 (ko) * 2017-09-13 2022-03-28 삼성전자주식회사 반도체 소자
US10319855B2 (en) 2017-09-25 2019-06-11 International Business Machines Corporation Reducing series resistance between source and/or drain regions and a channel region
US10686074B2 (en) * 2017-09-28 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
CN109599360A (zh) * 2017-09-30 2019-04-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN109671673B (zh) * 2017-10-13 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10804270B2 (en) 2017-10-18 2020-10-13 International Business Machines Corporation Contact formation through low-tempearature epitaxial deposition in semiconductor devices
US10347720B2 (en) * 2017-10-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Doping for semiconductor device with conductive feature
KR102421763B1 (ko) * 2017-11-08 2022-07-18 삼성전자주식회사 반도체 장치 및 그 제조 방법
WO2019093206A1 (ja) * 2017-11-09 2019-05-16 国立研究開発法人産業技術総合研究所 半導体装置及びその製造方法
CN109817525B (zh) * 2017-11-22 2022-03-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN109817713B (zh) * 2017-11-22 2022-04-15 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US10164048B1 (en) * 2017-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10504899B2 (en) * 2017-11-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors with various threshold voltages and method for manufacturing the same
US10777663B2 (en) 2017-11-30 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same
CN108155101A (zh) * 2017-12-22 2018-06-12 中国科学院微电子研究所 一种堆叠纳米线及其制造方法
US11522059B2 (en) * 2018-02-20 2022-12-06 Intel Corporation Metallic sealants in transistor arrangements
KR102056312B1 (ko) 2018-03-21 2019-12-16 한국과학기술원 고유전율 절연막이 구비된 저마늄 반도체 소자 및 이의 제조방법
KR102543178B1 (ko) * 2018-03-23 2023-06-14 삼성전자주식회사 핀 전계 효과 트랜지스터를 포함하는 반도체 소자 및 이의 제조 방법
US10510865B2 (en) * 2018-04-13 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Cap layer and anneal for gapfill improvement
JP7282485B2 (ja) 2018-05-14 2023-05-29 キオクシア株式会社 半導体装置およびその製造方法
US11355504B2 (en) * 2018-05-31 2022-06-07 Intel Corporation Anti-ferroelectric capacitor memory cell
US10483396B1 (en) 2018-06-11 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Interfacial layer between fin and source/drain region
US10658510B2 (en) * 2018-06-27 2020-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain structure
KR102574323B1 (ko) * 2018-07-23 2023-09-05 삼성전자주식회사 반도체 장치
US10580977B2 (en) * 2018-07-24 2020-03-03 International Business Machines Corporation Tightly integrated 1T1R ReRAM for planar technology
TWI827644B (zh) 2018-08-28 2024-01-01 日商索尼半導體解決方案公司 半導體裝置及其製造方法
CN110875237B (zh) * 2018-08-29 2021-12-14 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US10998241B2 (en) 2018-09-19 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation using a maskless fabrication process flow
US10746542B2 (en) 2018-09-25 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Line edge roughness analysis using atomic force microscopy
US11210447B2 (en) * 2018-09-26 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devices
US10763328B2 (en) * 2018-10-04 2020-09-01 Globalfoundries Inc. Epitaxial semiconductor material grown with enhanced local isotropy
US10720502B2 (en) 2018-10-22 2020-07-21 International Business Machines Corporation Vertical transistors having a layer of charge carriers in the extension region for reduced extension region resistance
EP3716314A1 (fr) * 2019-03-29 2020-09-30 Commissariat à l'Energie Atomique et aux Energies Alternatives Prise de contact sur du germanium
CN110634866B (zh) * 2019-09-05 2021-09-14 中国科学院微电子研究所 一种cmos晶体管、cmos晶体管的制备方法及电子设备
KR20210032845A (ko) 2019-09-17 2021-03-25 삼성전자주식회사 집적회로 소자 및 이의 제조 방법
US11316045B2 (en) * 2019-11-22 2022-04-26 Globalfoundries U.S. Inc. Vertical field effect transistor (FET) with source and drain structures
US11289574B2 (en) * 2019-12-26 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial source/drain features in semiconductor devices
US11177367B2 (en) * 2020-01-15 2021-11-16 International Business Machines Corporation Self-aligned bottom spacer EPI last flow for VTFET
US11695055B2 (en) 2020-03-03 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Passivation layers for semiconductor devices
US20210292902A1 (en) * 2020-03-17 2021-09-23 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
CN112234094B (zh) * 2020-09-29 2022-07-29 矽力杰半导体技术(杭州)有限公司 金属氧化物半导体器件及其制造方法
CN112466932A (zh) * 2020-11-30 2021-03-09 泉芯集成电路制造(济南)有限公司 晶体管外延结构及其制备方法
US20220246756A1 (en) * 2021-01-29 2022-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US20220416043A1 (en) * 2021-06-25 2022-12-29 Intel Corporation Reduced contact resistivity with pmos germanium and silicon doped with boron gate all around transistors
CN113471213B (zh) * 2021-07-02 2022-11-08 上海集成电路材料研究院有限公司 基于内嵌空腔soi衬底的多栅mos器件及其制备方法
US11923363B2 (en) 2021-09-20 2024-03-05 International Business Machines Corporation Semiconductor structure having bottom isolation and enhanced carrier mobility
CN114334830B (zh) * 2021-12-31 2023-09-29 无锡物联网创新中心有限公司 一种肖特基结源漏CMOS finFET及其制作方法
CN115148799B (zh) * 2022-08-30 2022-11-15 苏州华太电子技术股份有限公司 Rf ldmos器件及其制作方法

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313379A (ja) 1986-07-04 1988-01-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
US5089872A (en) 1990-04-27 1992-02-18 North Carolina State University Selective germanium deposition on silicon and resulting structures
JP3061406B2 (ja) 1990-09-28 2000-07-10 株式会社東芝 半導体装置
US5312766A (en) 1991-03-06 1994-05-17 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistors
US5296387A (en) 1991-03-06 1994-03-22 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistor structures
US5296386A (en) 1991-03-06 1994-03-22 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistor structures
JPH05183160A (ja) * 1991-12-26 1993-07-23 Toshiba Corp 半導体装置及びその製造方法
US5281552A (en) 1993-02-23 1994-01-25 At&T Bell Laboratories MOS fabrication process, including deposition of a boron-doped diffusion source layer
US5633177A (en) * 1993-11-08 1997-05-27 Advanced Micro Devices, Inc. Method for producing a semiconductor gate conductor having an impurity migration barrier
JPH07169958A (ja) * 1993-12-16 1995-07-04 Nec Corp 半導体装置およびその製造方法
US5644166A (en) * 1995-07-17 1997-07-01 Micron Technology, Inc. Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts
JPH10261792A (ja) 1997-03-18 1998-09-29 Hitachi Ltd 半導体装置およびその製造方法
US7176111B2 (en) * 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
US6887762B1 (en) 1998-11-12 2005-05-03 Intel Corporation Method of fabricating a field effect transistor structure with abrupt source/drain junctions
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6235568B1 (en) 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication
US6274894B1 (en) * 1999-08-17 2001-08-14 Advanced Micro Devices, Inc. Low-bandgap source and drain formation for short-channel MOS transistors
US8994104B2 (en) * 1999-09-28 2015-03-31 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US6541343B1 (en) 1999-12-30 2003-04-01 Intel Corporation Methods of making field effect transistor structure with partially isolated source/drain junctions
US7391087B2 (en) 1999-12-30 2008-06-24 Intel Corporation MOS transistor structure and method of fabrication
US6506653B1 (en) 2000-03-13 2003-01-14 International Business Machines Corporation Method using disposable and permanent films for diffusion and implant doping
US7222228B1 (en) 2000-06-14 2007-05-22 Netwolves Corporation System and method for secure management or remote systems
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US6952040B2 (en) 2001-06-29 2005-10-04 Intel Corporation Transistor structure and method of fabrication
AU2002349881A1 (en) * 2001-09-21 2003-04-01 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
US6621131B2 (en) 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
US6723622B2 (en) 2002-02-21 2004-04-20 Intel Corporation Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6605498B1 (en) 2002-03-29 2003-08-12 Intel Corporation Semiconductor transistor having a backfilled channel material
US6812086B2 (en) 2002-07-16 2004-11-02 Intel Corporation Method of making a semiconductor transistor
US7358121B2 (en) 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7786021B2 (en) 2002-11-14 2010-08-31 Sharp Laboratories Of America, Inc. High-density plasma multilayer gate oxide
US6972228B2 (en) 2003-03-12 2005-12-06 Intel Corporation Method of forming an element of a microelectronic circuit
US7060576B2 (en) 2003-10-24 2006-06-13 Intel Corporation Epitaxially deposited source/drain
US7138320B2 (en) 2003-10-31 2006-11-21 Advanced Micro Devices, Inc. Advanced technique for forming a transistor having raised drain and source regions
KR100506460B1 (ko) * 2003-10-31 2005-08-05 주식회사 하이닉스반도체 반도체소자의 트랜지스터 및 그 형성방법
US6949482B2 (en) * 2003-12-08 2005-09-27 Intel Corporation Method for improving transistor performance through reducing the salicide interface resistance
JP2005183160A (ja) 2003-12-19 2005-07-07 Jst Mfg Co Ltd 雌コンタクト
US7129139B2 (en) 2003-12-22 2006-10-31 Intel Corporation Methods for selective deposition to improve selectivity
US7662689B2 (en) 2003-12-23 2010-02-16 Intel Corporation Strained transistor integration for CMOS
US7223679B2 (en) 2003-12-24 2007-05-29 Intel Corporation Transistor gate electrode having conductor material layer
US7226842B2 (en) 2004-02-17 2007-06-05 Intel Corporation Fabricating strained channel epitaxial source/drain transistors
US7138697B2 (en) 2004-02-24 2006-11-21 International Business Machines Corporation Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
JP4375619B2 (ja) * 2004-05-26 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR100591157B1 (ko) 2004-06-07 2006-06-19 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
US7135724B2 (en) 2004-09-29 2006-11-14 International Business Machines Corporation Structure and method for making strained channel field effect transistor using sacrificial spacer
JP4568286B2 (ja) * 2004-10-04 2010-10-27 パナソニック株式会社 縦型電界効果トランジスタおよびその製造方法
US7402872B2 (en) 2004-11-18 2008-07-22 Intel Corporation Method for forming an integrated circuit
US20060156080A1 (en) 2004-12-10 2006-07-13 Texas Instruments Incorporated Method for the thermal testing of a thermal path to an integrated circuit
JP4369359B2 (ja) 2004-12-28 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
US20060166417A1 (en) * 2005-01-27 2006-07-27 International Business Machines Corporation Transistor having high mobility channel and methods
DE102005004411B4 (de) 2005-01-31 2010-09-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren für die Herstellung eines in-situ-gebildeten Halo-Gebietes in einem Transistorelement
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US8811915B2 (en) * 2005-03-04 2014-08-19 Psion Inc. Digital wireless narrow band radio
US7221006B2 (en) 2005-04-20 2007-05-22 Freescale Semiconductor, Inc. GeSOI transistor with low junction current and low junction capacitance and method for making the same
KR100733419B1 (ko) * 2005-04-30 2007-06-29 주식회사 하이닉스반도체 내부전원 생성장치
US7446350B2 (en) 2005-05-10 2008-11-04 International Business Machine Corporation Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
FR2886761B1 (fr) * 2005-06-06 2008-05-02 Commissariat Energie Atomique Transistor a canal a base de germanium enrobe par une electrode de grille et procede de fabrication d'un tel transistor
US7579617B2 (en) 2005-06-22 2009-08-25 Fujitsu Microelectronics Limited Semiconductor device and production method thereof
JP4984665B2 (ja) 2005-06-22 2012-07-25 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7279375B2 (en) * 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7494858B2 (en) 2005-06-30 2009-02-24 Intel Corporation Transistor with improved tip profile and method of manufacture thereof
US7807523B2 (en) * 2005-07-01 2010-10-05 Synopsys, Inc. Sequential selective epitaxial growth
GB0518013D0 (en) 2005-09-03 2005-10-12 Ibm Method,apparatus and computer program product for sharing resources
US7288828B2 (en) 2005-10-05 2007-10-30 United Microelectronics Corp. Metal oxide semiconductor transistor device
WO2007053381A1 (en) * 2005-10-31 2007-05-10 Advanced Micro Devices, Inc. Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP5091403B2 (ja) 2005-12-15 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4536001B2 (ja) 2005-12-20 2010-09-01 日本板硝子環境アメニティ株式会社 透光壁
US7525160B2 (en) * 2005-12-27 2009-04-28 Intel Corporation Multigate device with recessed strain regions
US8134142B2 (en) * 2006-01-25 2012-03-13 Nxp B.V. Tunneling transistor with barrier
US7982252B2 (en) * 2006-01-27 2011-07-19 Hynix Semiconductor Inc. Dual-gate non-volatile ferroelectric memory
JP2007214481A (ja) 2006-02-13 2007-08-23 Toshiba Corp 半導体装置
JP2007258485A (ja) * 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
US20070238236A1 (en) 2006-03-28 2007-10-11 Cook Ted Jr Structure and fabrication method of a selectively deposited capping layer on an epitaxially grown source drain
US8017487B2 (en) * 2006-04-05 2011-09-13 Globalfoundries Singapore Pte. Ltd. Method to control source/drain stressor profiles for stress engineering
JP4345774B2 (ja) * 2006-04-26 2009-10-14 ソニー株式会社 半導体装置の製造方法
JP4960007B2 (ja) * 2006-04-26 2012-06-27 株式会社東芝 半導体装置及び半導体装置の製造方法
JP5130648B2 (ja) 2006-04-27 2013-01-30 ソニー株式会社 半導体装置の製造方法および半導体装置
US7785995B2 (en) * 2006-05-09 2010-08-31 Asm America, Inc. Semiconductor buffer structures
US7491643B2 (en) 2006-05-24 2009-02-17 International Business Machines Corporation Method and structure for reducing contact resistance between silicide contact and overlying metallization
US7678631B2 (en) 2006-06-06 2010-03-16 Intel Corporation Formation of strain-inducing films
US7618866B2 (en) 2006-06-09 2009-11-17 International Business Machines Corporation Structure and method to form multilayer embedded stressors
GB0612093D0 (en) 2006-06-19 2006-07-26 Univ Belfast IC Substrate and Method of Manufacture of IC Substrate
JP5076388B2 (ja) 2006-07-28 2012-11-21 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7605407B2 (en) 2006-09-06 2009-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Composite stressors with variable element atomic concentrations in MOS devices
US7716001B2 (en) 2006-11-15 2010-05-11 Qualcomm Incorporated Delay line calibration
US7550796B2 (en) 2006-12-06 2009-06-23 Electronics And Telecommunications Research Institute Germanium semiconductor device and method of manufacturing the same
US20080135949A1 (en) * 2006-12-08 2008-06-12 Agency For Science, Technology And Research Stacked silicon-germanium nanowire structure and method of forming the same
JP5100137B2 (ja) * 2007-01-26 2012-12-19 株式会社東芝 半導体装置の製造方法および半導体装置
JP5141029B2 (ja) 2007-02-07 2013-02-13 富士通セミコンダクター株式会社 半導体装置とその製造方法
US7544997B2 (en) 2007-02-16 2009-06-09 Freescale Semiconductor, Inc. Multi-layer source/drain stressor
JP2008218725A (ja) 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置とその製造方法
JP2008235568A (ja) 2007-03-20 2008-10-02 Toshiba Corp 半導体装置およびその製造方法
US7732285B2 (en) 2007-03-28 2010-06-08 Intel Corporation Semiconductor device having self-aligned epitaxial source and drain extensions
WO2008137480A2 (en) * 2007-05-01 2008-11-13 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
US20100272859A1 (en) 2007-08-28 2010-10-28 Pepsico, Inc. Delivery and controlled release of encapsulated water-insoluble flavorants
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
JP5018473B2 (ja) 2007-12-28 2012-09-05 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5317483B2 (ja) 2008-01-29 2013-10-16 株式会社東芝 半導体装置
US20110058126A1 (en) * 2008-02-14 2011-03-10 Yasunobu Okada Semiconductor element, method of manufacturing fine structure arranging substrate, and display element
JP2009200090A (ja) 2008-02-19 2009-09-03 Panasonic Corp 半導体装置及びその製造方法
US8405127B2 (en) 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
US20090242989A1 (en) 2008-03-25 2009-10-01 Chan Kevin K Complementary metal-oxide-semiconductor device with embedded stressor
US20090302348A1 (en) 2008-06-10 2009-12-10 International Business Machines Corporation Stress enhanced transistor devices and methods of making
US7663192B2 (en) 2008-06-30 2010-02-16 Intel Corporation CMOS device and method of manufacturing same
DE102008035816B4 (de) 2008-07-31 2011-08-25 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials
US20100109044A1 (en) 2008-10-30 2010-05-06 Tekleab Daniel G Optimized Compressive SiGe Channel PMOS Transistor with Engineered Ge Profile and Optimized Silicon Cap Layer
KR101561059B1 (ko) * 2008-11-20 2015-10-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7902009B2 (en) 2008-12-11 2011-03-08 Intel Corporation Graded high germanium compound films for strained semiconductor devices
JP2010171337A (ja) 2009-01-26 2010-08-05 Toshiba Corp 電界効果トランジスタ
KR101552938B1 (ko) 2009-02-02 2015-09-14 삼성전자주식회사 스트레스 생성층을 갖는 반도체 소자의 제조방법
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8362482B2 (en) * 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8084308B2 (en) * 2009-05-21 2011-12-27 International Business Machines Corporation Single gate inverter nanowire mesh
US8198619B2 (en) * 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US8216902B2 (en) * 2009-08-06 2012-07-10 International Business Machines Corporation Nanomesh SRAM cell
US8120120B2 (en) 2009-09-17 2012-02-21 Globalfoundries Inc. Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility
US9245805B2 (en) 2009-09-24 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with metal gates and stressors
US8598003B2 (en) 2009-12-21 2013-12-03 Intel Corporation Semiconductor device having doped epitaxial region and its methods of fabrication
US8211772B2 (en) * 2009-12-23 2012-07-03 Intel Corporation Two-dimensional condensation for uniaxially strained semiconductor fins
US7989298B1 (en) * 2010-01-25 2011-08-02 International Business Machines Corporation Transistor having V-shaped embedded stressor
TWI452008B (zh) * 2010-03-03 2014-09-11 Huang Chung Cheng 奈米結構的製造方法及奈米結構於三維結構之應用
US9029834B2 (en) 2010-07-06 2015-05-12 International Business Machines Corporation Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
US8354694B2 (en) 2010-08-13 2013-01-15 International Business Machines Corporation CMOS transistors with stressed high mobility channels
US9484432B2 (en) 2010-12-21 2016-11-01 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US8901537B2 (en) 2010-12-21 2014-12-02 Intel Corporation Transistors with high concentration of boron doped germanium
DE102010064280B4 (de) * 2010-12-28 2012-08-30 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verfahren zur Verringerung der Defektraten in PFET-Transistoren, die ein Si/GE Halbleitermaterial aufweisen, durch Vorsehen einer graduellen Ge-Konzentration, und entsprechende PFET-Transistoren
US8710632B2 (en) 2012-09-07 2014-04-29 United Microelectronics Corp. Compound semiconductor epitaxial structure and method for fabricating the same
US20140231914A1 (en) * 2013-02-19 2014-08-21 Applied Materials, Inc. Fin field effect transistor fabricated with hollow replacement channel
US9571748B1 (en) 2015-10-27 2017-02-14 International Business Machines Corporation Camera flash light direction management

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