KR101851926B1 - 발광 장치 및 발광 장치를 제작하기 위한 방법 - Google Patents

발광 장치 및 발광 장치를 제작하기 위한 방법 Download PDF

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KR101851926B1
KR101851926B1 KR1020177014967A KR20177014967A KR101851926B1 KR 101851926 B1 KR101851926 B1 KR 101851926B1 KR 1020177014967 A KR1020177014967 A KR 1020177014967A KR 20177014967 A KR20177014967 A KR 20177014967A KR 101851926 B1 KR101851926 B1 KR 101851926B1
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layer
electrode layer
light emitting
oxide semiconductor
oxide
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KR20170065673A (ko
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순페이 야마자키
준이치로 사카타
마사유키 사카쿠라
요시아키 오이카와
켄이치 오카자키
호타카 마루야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H01L27/1225—
    • H01L27/124—
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    • H01L27/3262—
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K50/00—Organic light-emitting devices
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Led Devices (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
KR1020177014967A 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법 Active KR101851926B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009204972 2009-09-04
JPJP-P-2009-204972 2009-09-04
PCT/JP2010/063734 WO2011027661A1 (en) 2009-09-04 2010-08-06 Light-emitting device and method for manufacturing the same

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KR1020167025700A Division KR101745341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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KR20170065673A KR20170065673A (ko) 2017-06-13
KR101851926B1 true KR101851926B1 (ko) 2018-04-25

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KR1020177014967A Active KR101851926B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020187010617A Active KR101988341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020257005802A Pending KR20250030527A (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197036568A Active KR102221207B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020227012580A Active KR102528026B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020217005143A Active KR102389975B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020127008606A Expired - Fee Related KR101707433B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197016168A Active KR102113148B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020237013964A Active KR102775255B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020167025700A Active KR101745341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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KR1020257005802A Pending KR20250030527A (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197036568A Active KR102221207B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020227012580A Active KR102528026B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020217005143A Active KR102389975B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020127008606A Expired - Fee Related KR101707433B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197016168A Active KR102113148B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020237013964A Active KR102775255B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020167025700A Active KR101745341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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US (8) US8502225B2 (enExample)
JP (11) JP5292372B2 (enExample)
KR (10) KR101851926B1 (enExample)
CN (2) CN102498570B (enExample)
TW (7) TWI756608B (enExample)
WO (1) WO2011027661A1 (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101592013B1 (ko) * 2008-10-13 2016-02-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101851926B1 (ko) 2009-09-04 2018-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR102113064B1 (ko) * 2009-09-16 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
EP2486593B1 (en) 2009-10-09 2017-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR102128972B1 (ko) 2009-11-06 2020-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
CN104465318B (zh) 2009-11-06 2018-04-24 株式会社半导体能源研究所 制造半导体器件的方法
KR102614462B1 (ko) 2009-11-27 2023-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
CN103081092B (zh) 2010-08-27 2016-11-09 株式会社半导体能源研究所 存储器件及半导体器件
JP2012163651A (ja) * 2011-02-04 2012-08-30 Sony Corp 有機ｅｌ表示装置及び電子機器
TWI671911B (zh) * 2011-05-05 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
FR2975213B1 (fr) 2011-05-10 2013-05-10 Trixell Sas Dispositif d'adressage de lignes d'un circuit de commande pour matrice active de detection
JP4982620B1 (ja) * 2011-07-29 2012-07-25 富士フイルム株式会社 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びｘ線センサ
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
US10014068B2 (en) 2011-10-07 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5899237B2 (ja) * 2011-11-18 2016-04-06 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
KR101339000B1 (ko) * 2011-12-14 2013-12-09 엘지디스플레이 주식회사 유기전계발광 표시소자 및 그 제조방법
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101451403B1 (ko) * 2012-06-26 2014-10-23 엘지디스플레이 주식회사 금속 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법
KR102343715B1 (ko) * 2012-07-20 2021-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
WO2014054530A1 (ja) * 2012-10-04 2014-04-10 東レ株式会社 導電パターンの製造方法
KR20140088810A (ko) * 2013-01-03 2014-07-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN103151368A (zh) * 2013-02-05 2013-06-12 京东方科技集团股份有限公司 一种阵列基板及oled显示装置
CN103309108B (zh) * 2013-05-30 2016-02-10 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN105453269B (zh) * 2013-08-07 2019-04-05 夏普株式会社 X射线图像传感器用基板
JP6426402B2 (ja) * 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6570825B2 (ja) 2013-12-12 2019-09-04 株式会社半導体エネルギー研究所 電子機器
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9887291B2 (en) * 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
JP6722980B2 (ja) 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
US9705004B2 (en) * 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043847B2 (en) * 2014-08-26 2018-08-07 Gingy Technology Inc. Image capturing module and electrical apparatus
KR102295221B1 (ko) * 2014-12-26 2021-09-01 삼성디스플레이 주식회사 게이트 구동회로 및 이를 포함하는 표시장치
CN104701350B (zh) * 2015-03-03 2017-03-01 京东方科技集团股份有限公司 电极及其制作方法、阵列基板及其制作方法
CN113419386A (zh) * 2015-04-13 2021-09-21 株式会社半导体能源研究所 显示面板、数据处理器及显示面板的制造方法
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置
US9666655B2 (en) 2015-05-05 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102402759B1 (ko) * 2015-05-29 2022-05-31 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
US11189736B2 (en) * 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105138163B (zh) * 2015-07-30 2018-01-12 京东方科技集团股份有限公司 一种有机电致发光触控显示面板、其制备方法及显示装置
JP2017096998A (ja) * 2015-11-18 2017-06-01 株式会社ジャパンディスプレイ 表示装置
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
JP6725335B2 (ja) * 2016-06-20 2020-07-15 株式会社ジャパンディスプレイ 半導体装置
KR102620013B1 (ko) * 2016-07-01 2024-01-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조방법
US10403204B2 (en) 2016-07-12 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for driving display device
CN107622224A (zh) * 2016-07-17 2018-01-23 金佶科技股份有限公司 指纹识别模块以及指纹识别方法
WO2018060256A1 (de) * 2016-09-27 2018-04-05 Inuru Gmbh Destruktionslose integration von elektronik
JP2018106101A (ja) * 2016-12-28 2018-07-05 株式会社ジャパンディスプレイ 表示装置
CN107369716B (zh) * 2017-07-17 2021-02-12 京东方科技集团股份有限公司 薄膜晶体管及制作方法、显示装置
JP6905421B2 (ja) * 2017-08-28 2021-07-21 株式会社ジャパンディスプレイ 表示装置
JP6957310B2 (ja) * 2017-10-24 2021-11-02 東京エレクトロン株式会社 半導体装置およびｃｍｏｓトランジスタ
CN108171179A (zh) * 2017-12-30 2018-06-15 深圳信炜科技有限公司 感光电路、感光装置及电子设备
CN108224148B (zh) * 2018-01-04 2023-04-18 京东方科技集团股份有限公司 一种oled照明面板及其驱动方法，照明装置
CN108215513B (zh) * 2018-02-05 2019-06-21 杭州旗捷科技有限公司 可变阈值的反馈电路、耗材芯片、耗材
TWI662353B (zh) * 2018-07-13 2019-06-11 松翰科技股份有限公司 光學影像感測模組
CN115509041A (zh) * 2018-11-26 2022-12-23 群创光电股份有限公司 电子装置
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US11005495B1 (en) * 2019-04-11 2021-05-11 Senseeker Engineering, Inc. Charge transfer circuit for compact modulators
KR20220006541A (ko) 2019-05-10 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR20210004795A (ko) * 2019-07-04 2021-01-13 엘지디스플레이 주식회사 디스플레이 장치
KR102814989B1 (ko) * 2019-07-19 2025-05-30 삼성디스플레이 주식회사 표시 장치
JP7428919B2 (ja) * 2019-07-25 2024-02-07 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN111244289B (zh) * 2020-01-15 2022-09-30 重庆文理学院 一种ZnO薄膜为界面层的有机光伏器件的制备方法
KR102356658B1 (ko) 2020-03-31 2022-01-26 포항공과대학교 산학협력단 3차원 회로 프린팅이 가능한 연신성 전극회로, 그를 이용한 스트레인 센서 및 그의 제조방법
JP2021192406A (ja) * 2020-06-05 2021-12-16 シャープ株式会社 アクティブマトリクス基板およびその製造方法
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
KR20220080801A (ko) * 2020-12-07 2022-06-15 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조 방법
KR20220092393A (ko) 2020-12-24 2022-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
US12074221B2 (en) * 2021-07-26 2024-08-27 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate and manufacturing method thereof, display panel
CN116613136A (zh) * 2022-02-09 2023-08-18 群创光电股份有限公司 电子装置
JP2024122413A (ja) * 2023-02-28 2024-09-09 キオクシア株式会社 支持基板、支持基板の製造方法、及び半導体記憶装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047566A (ja) * 2002-07-09 2004-02-12 Sharp Corp 電界効果型トランジスタ、その製造方法及び画像表示装置
JP2004281087A (ja) * 2003-03-12 2004-10-07 Nippon Hoso Kyokai <Nhk> 有機ｅｌデバイスおよび有機ｅｌディスプレイ
JP2008276212A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
JP2009021612A (ja) * 2005-09-29 2009-01-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Family Cites Families (271)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
US4615102A (en) 1984-05-01 1986-10-07 Fujitsu Limited Method of producing enhancement mode and depletion mode FETs
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63301565A (ja) 1987-05-30 1988-12-08 Matsushita Electric Ind Co Ltd 薄膜集積回路
JPH02156676A (ja) 1988-12-09 1990-06-15 Fuji Xerox Co Ltd 薄膜半導体装置
DE69107101T2 (de) 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
JP2585118B2 (ja) 1990-02-06 1997-02-26 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2572003B2 (ja) 1992-03-30 1997-01-16 三星電子株式会社 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法
US5576556A (en) 1993-08-20 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device with gate metal oxide and sidewall spacer
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JPH06202156A (ja) * 1992-12-28 1994-07-22 Sharp Corp ドライバーモノリシック駆動素子
JP3479375B2 (ja) * 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
GB9520888D0 (en) 1995-10-12 1995-12-13 Philips Electronics Nv Electronic devices comprising thin-film circuitry
US5847410A (en) 1995-11-24 1998-12-08 Semiconductor Energy Laboratory Co. Semiconductor electro-optical device
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP3264364B2 (ja) * 1997-01-21 2002-03-11 シャープ株式会社 液晶表示装置の製造方法
JPH10290012A (ja) 1997-04-14 1998-10-27 Nec Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2001051292A (ja) 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
DE59912756D1 (de) * 1998-08-12 2005-12-15 Hammerstein Gmbh C Rob Sitzträgergestell eines Fahrzeugsitzes mit einem linken und einem rechten vorderen Stellarm
JP2000111948A (ja) 1998-10-05 2000-04-21 Sony Corp 電気光学装置の製造方法及び電気光学装置用の駆動基板の製造方法
US6492190B2 (en) * 1998-10-05 2002-12-10 Sony Corporation Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3107075B2 (ja) 1998-12-14 2000-11-06 日本電気株式会社 液晶表示装置
US6534826B2 (en) 1999-04-30 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4115654B2 (ja) 1999-04-30 2008-07-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4552239B2 (ja) * 1999-05-12 2010-09-29 ソニー株式会社 表示用薄膜半導体素子及び表示装置
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
JP4730994B2 (ja) 1999-06-04 2011-07-20 株式会社半導体エネルギー研究所 電気光学装置及びその作製方法並びに電子装置
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001284592A (ja) 2000-03-29 2001-10-12 Sony Corp 薄膜半導体装置及びその駆動方法
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US6828587B2 (en) 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US6549071B1 (en) 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3716755B2 (ja) 2001-04-05 2005-11-16 株式会社日立製作所 アクティブマトリクス型表示装置
JP2003029293A (ja) 2001-07-13 2003-01-29 Minolta Co Ltd 積層型表示装置及びその製造方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4798907B2 (ja) * 2001-09-26 2011-10-19 株式会社半導体エネルギー研究所 半導体装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP2003271075A (ja) * 2002-03-13 2003-09-25 Toshiba Corp 表示装置
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP4069648B2 (ja) 2002-03-15 2008-04-02 カシオ計算機株式会社 半導体装置および表示駆動装置
JP2003273361A (ja) * 2002-03-15 2003-09-26 Sharp Corp 半導体装置およびその製造方法
JP2003280034A (ja) 2002-03-20 2003-10-02 Sharp Corp Ｔｆｔ基板およびそれを用いる液晶表示装置
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP2003309266A (ja) 2002-04-17 2003-10-31 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7081704B2 (en) 2002-08-09 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4651922B2 (ja) 2002-08-09 2011-03-16 株式会社半導体エネルギー研究所 Ｅｌ表示装置
KR100870522B1 (ko) 2002-09-17 2008-11-26 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US6788567B2 (en) 2002-12-02 2004-09-07 Rohm Co., Ltd. Data holding device and data holding method
JP4251874B2 (ja) * 2003-01-21 2009-04-08 三洋電機株式会社 エレクトロルミネッセンス表示装置
JP2004247533A (ja) * 2003-02-14 2004-09-02 Casio Comput Co Ltd アクティブマトリックスパネル
JP4314843B2 (ja) 2003-03-05 2009-08-19 カシオ計算機株式会社 画像読取装置及び個人認証システム
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
KR20050000129A (ko) * 2003-06-23 2005-01-03 삼성전자주식회사 액정 표시 장치
US8552933B2 (en) * 2003-06-30 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and driving method of the same
JP4675584B2 (ja) 2003-06-30 2011-04-27 株式会社半導体エネルギー研究所 発光装置の駆動方法
JP4906106B2 (ja) * 2003-07-14 2012-03-28 株式会社半導体エネルギー研究所 発光装置
TWI399580B (zh) 2003-07-14 2013-06-21 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005054862A (ja) * 2003-08-01 2005-03-03 Smc Corp アクチュエータ
KR20050029426A (ko) * 2003-09-22 2005-03-28 삼성에스디아이 주식회사 칼라필터층 또는 색변환층을 갖는 풀칼라 유기전계발광소자
US20050093435A1 (en) 2003-09-22 2005-05-05 Suh Min-Chul Full color organic light-emtting device having color modulation layer
US20080081105A1 (en) 2003-09-22 2008-04-03 Samsung Sdi Co., Ltd. Method of fabricating full color organic light-emtting device having color modulation layer using liti method
US7230374B2 (en) 2003-09-22 2007-06-12 Samsung Sdi Co., Ltd. Full color organic light-emitting device having color modulation layer
JP4683898B2 (ja) * 2003-10-21 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4877866B2 (ja) 2003-10-28 2012-02-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4831954B2 (ja) * 2003-11-14 2011-12-07 株式会社半導体エネルギー研究所 表示装置の作製方法
US7859187B2 (en) 2003-11-14 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Display device and method for fabricating the same
WO2005048353A1 (en) 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing liquid crystal display device
KR101019045B1 (ko) 2003-11-25 2011-03-04 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
US7601236B2 (en) 2003-11-28 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
KR101090245B1 (ko) 2003-12-10 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판
US7691685B2 (en) 2004-01-26 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2005071478A1 (en) 2004-01-26 2005-08-04 Semiconductor Energy Laboratory Co., Ltd. Electric appliance, semiconductor device, and method for manufacturing the same
CN1914552A (zh) * 2004-01-26 2007-02-14 株式会社半导体能源研究所 电器、半导体装置及其制造方法
KR20070116889A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 박막의 기상성막방법
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7642642B2 (en) * 2004-03-23 2010-01-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Microcap wafer bonding apparatus
JP4628004B2 (ja) * 2004-03-26 2011-02-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7129634B2 (en) * 2004-04-07 2006-10-31 Eastman Kodak Company Color OLED with added color gamut pixels
US8581805B2 (en) * 2004-05-21 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP5089027B2 (ja) 2004-05-28 2012-12-05 株式会社半導体エネルギー研究所 半導体装置
US7491590B2 (en) * 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
KR101098343B1 (ko) * 2004-06-03 2011-12-26 삼성전자주식회사 전계발광표시장치, 색필터 패널 및 이의 제조 방법
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP4286738B2 (ja) 2004-07-14 2009-07-01 株式会社半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置の作製方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
KR101217659B1 (ko) * 2004-09-03 2013-01-02 스탠리 일렉트릭 컴퍼니, 리미티드 Ｅｌ소자
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5152448B2 (ja) * 2004-09-21 2013-02-27 カシオ計算機株式会社 画素駆動回路及び画像表示装置
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
AU2005302964B2 (en) 2004-11-10 2010-11-04 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US8003449B2 (en) 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
JP2006202156A (ja) * 2005-01-21 2006-08-03 Seiko Epson Corp メモリーカードコネクタ
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR20060125066A (ko) 2005-06-01 2006-12-06 삼성전자주식회사 개구율이 향상된 어레이 기판 및 이의 제조방법
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
TWI282249B (en) 2005-07-05 2007-06-01 Univision Technology Inc Color OLED device and fabrication method thereof
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
KR100729043B1 (ko) 2005-09-14 2007-06-14 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그의 제조방법
JP5006598B2 (ja) 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090130089A (ko) 2005-11-15 2009-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
US7745798B2 (en) 2005-11-15 2010-06-29 Fujifilm Corporation Dual-phosphor flat panel radiation detector
JP5129473B2 (ja) 2005-11-15 2013-01-30 富士フイルム株式会社 放射線検出器
JP5250929B2 (ja) 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
EP1793266B1 (en) * 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
KR100732849B1 (ko) 2005-12-21 2007-06-27 삼성에스디아이 주식회사 유기 발광 표시장치
KR100771607B1 (ko) 2005-12-21 2007-10-31 엘지전자 주식회사 유기 ｅｌ 디스플레이
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5110803B2 (ja) * 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
KR101230316B1 (ko) * 2006-03-21 2013-02-06 삼성디스플레이 주식회사 표시장치와 그 제조방법
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
JP2007286150A (ja) 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
JP2007293073A (ja) * 2006-04-26 2007-11-08 Epson Imaging Devices Corp 電気光学装置の製造方法、電気光学装置および電子機器
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2006293385A (ja) 2006-05-24 2006-10-26 Semiconductor Energy Lab Co Ltd 表示装置
JP4494369B2 (ja) * 2006-05-24 2010-06-30 株式会社半導体エネルギー研究所 液晶表示装置
KR20070114533A (ko) 2006-05-29 2007-12-04 삼성전자주식회사 반투과 표시 장치 및 그 제조 방법
WO2007142167A1 (en) 2006-06-02 2007-12-13 Kochi Industrial Promotion Center Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
KR101217555B1 (ko) 2006-06-28 2013-01-02 삼성전자주식회사 접합 전계 효과 박막 트랜지스터
KR101257811B1 (ko) 2006-06-30 2013-04-29 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
US20080029656A1 (en) * 2006-07-20 2008-02-07 John Feehan Guide for cords, cables and wires
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5216276B2 (ja) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4748456B2 (ja) * 2006-09-26 2011-08-17 カシオ計算機株式会社 画素駆動回路及び画像表示装置
KR20080028571A (ko) 2006-09-27 2008-04-01 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5468196B2 (ja) 2006-09-29 2014-04-09 株式会社半導体エネルギー研究所 半導体装置、表示装置及び液晶表示装置
KR100790761B1 (ko) 2006-09-29 2008-01-03 한국전자통신연구원 인버터
TWI675358B (zh) 2006-09-29 2019-10-21 日商半導體能源研究所股份有限公司 顯示裝置和電子裝置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
KR20080045886A (ko) * 2006-11-21 2008-05-26 삼성전자주식회사 유기막 증착용 마스크 및 그 제조방법, 이를 포함하는유기전계 발광표시장치의 제조방법
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR20080054597A (ko) 2006-12-13 2008-06-18 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
KR20080055058A (ko) * 2006-12-14 2008-06-19 삼성전자주식회사 표시 기판 및 그 제조 방법
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
TWI396464B (zh) 2007-01-22 2013-05-11 Innolux Corp 有機電致發光顯示裝置及其製作方法
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101410926B1 (ko) 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5196870B2 (ja) 2007-05-23 2013-05-15 キヤノン株式会社 酸化物半導体を用いた電子素子及びその製造方法
WO2008105347A1 (en) 2007-02-20 2008-09-04 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP2008203761A (ja) * 2007-02-22 2008-09-04 Hitachi Displays Ltd 表示装置
JP5121254B2 (ja) 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
KR100858088B1 (ko) 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP5294651B2 (ja) 2007-05-18 2013-09-18 キヤノン株式会社 インバータの作製方法及びインバータ
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
KR101092483B1 (ko) 2007-05-31 2011-12-13 캐논 가부시끼가이샤 산화물 반도체를 사용한 박막트랜지스터의 제조 방법
US8017422B2 (en) * 2007-06-19 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, method for manufacturing light emitting device, and light emitting device
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101399608B1 (ko) 2007-07-27 2014-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작방법
JP5331407B2 (ja) 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009049223A (ja) * 2007-08-21 2009-03-05 Seiko Epson Corp 発光装置
KR101484297B1 (ko) 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
JP5395384B2 (ja) 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR101432110B1 (ko) * 2007-09-11 2014-08-21 삼성디스플레이 주식회사 유기 발광 장치 및 그 제조 방법
JP5354999B2 (ja) 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4759598B2 (ja) * 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2009103732A (ja) 2007-10-19 2009-05-14 Sony Corp 表示装置およびその製造方法
JP2009099887A (ja) 2007-10-19 2009-05-07 Hitachi Displays Ltd 表示装置
JP2009109883A (ja) * 2007-10-31 2009-05-21 Canon Inc 電場発光表示装置
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
KR101412761B1 (ko) 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP5540517B2 (ja) 2008-02-22 2014-07-02 凸版印刷株式会社 画像表示装置
KR20090105261A (ko) * 2008-04-02 2009-10-07 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
JP2009265271A (ja) 2008-04-23 2009-11-12 Nippon Shokubai Co Ltd 電気光学表示装置
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR101499235B1 (ko) * 2008-06-23 2015-03-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
TWI413260B (zh) 2008-07-31 2013-10-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TW201009954A (en) * 2008-08-19 2010-03-01 Chunghwa Picture Tubes Ltd Thin film transistor, pixel structure and fabrication methods thereof
KR101489652B1 (ko) * 2008-09-02 2015-02-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20100030865A (ko) * 2008-09-11 2010-03-19 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (zh) 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR102251817B1 (ko) 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101579487B1 (ko) * 2008-10-28 2015-12-23 삼성디스플레이 주식회사 표시 장치
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101432764B1 (ko) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR101785887B1 (ko) 2008-11-21 2017-10-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
TWI402982B (zh) * 2009-03-02 2013-07-21 Innolux Corp 影像顯示系統及其製造方法
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101739154B1 (ko) 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101870460B1 (ko) 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR102181301B1 (ko) 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101851926B1 (ko) * 2009-09-04 2018-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR102000932B1 (ko) * 2012-12-18 2019-07-26 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
US9012900B2 (en) * 2012-12-26 2015-04-21 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
KR102139355B1 (ko) * 2013-12-31 2020-07-29 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
KR102471668B1 (ko) * 2014-11-10 2022-11-29 엘지디스플레이 주식회사 유기발광 다이오드 표시장치 및 그 제조방법
KR102802821B1 (ko) * 2016-11-25 2025-04-30 엘지디스플레이 주식회사 표시장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047566A (ja) * 2002-07-09 2004-02-12 Sharp Corp 電界効果型トランジスタ、その製造方法及び画像表示装置
JP2004281087A (ja) * 2003-03-12 2004-10-07 Nippon Hoso Kyokai <Nhk> 有機ｅｌデバイスおよび有機ｅｌディスプレイ
JP2009021612A (ja) * 2005-09-29 2009-01-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2008276212A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置

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