JP2009010052A - 表示装置の製造方法 - Google Patents
表示装置の製造方法 Download PDFInfo
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- JP2009010052A JP2009010052A JP2007168286A JP2007168286A JP2009010052A JP 2009010052 A JP2009010052 A JP 2009010052A JP 2007168286 A JP2007168286 A JP 2007168286A JP 2007168286 A JP2007168286 A JP 2007168286A JP 2009010052 A JP2009010052 A JP 2009010052A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 93
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 61
- 239000000956 alloy Substances 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 186
- 239000010409 thin film Substances 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 15
- 238000001556 precipitation Methods 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 52
- 230000008021 deposition Effects 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 239000010410 layer Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000000523 sample Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000013074 reference sample Substances 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910000858 La alloy Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910004205 SiNX Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007667 ZnOx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- -1 oxide Chemical compound 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005464 sample preparation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】基板上にて、酸化物透明導電膜とAl合金膜が直接接触する構造を備えた表示装置の製造方法である。Al合金膜は、Ag、Zn、Cu、およびNiよりなる群から選択される少なくとも一種の合金元素を0.5原子%以下含有し、基板の温度を合金元素の析出温度以上に制御してAl合金膜の形成を行う。
【選択図】なし
Description
図3を参照しながら、アモルファスシリコンTFT基板の実施形態を説明する。
図3は、本発明に係るボトムゲート型のTFT基板の好ましい実施形態を説明する概略断面説明図である。参考のため、図2に、従来の代表的なアモルファスシリコンTFT基板の概略断面説明図を添付する。
図12を参照しながら、ポリシリコンTFT基板の実施形態を詳細に説明する。
図12は、本発明に係るトップゲート型のTFT基板の好ましい実施形態を説明する概略断面説明図である。
形成した後、同様にフォトレジストによってパターニングしたマスクを用いて層間絶縁膜(SiOx)とゲート絶縁膜27の酸化シリコン膜をドライエッチングし、コンタクトホールを形成する。スパッタリングにより、厚さ50nm程度のMo膜53と厚さ450nm程度のAl−0.2原子%Ag−0.35原子%La合金膜を成膜した後、パターニングすることによって、信号線に一体のソース電極28およびドレイン電極29を形成する。その結果、ソース電極28とドレイン電極29は、Mo膜53を介して各々コンタクトホールを介してn+型ポリシリコン膜(n+poly−Si)にコンタクトされる。
[I]試験用試料の作製
ITO膜とAl合金膜との間の接触電気抵抗を調べるため、本発明の試験用試料(本発明試料)として、図1に示すケルビンパターンを作製した。ケルビンパターンの作製方法は、下記(1)〜(5)に示すとおりである。実施例1では、0.5原子%のNiを含むAl−0.5原子%Ni合金膜を用いた。また、Al合金膜の合金元素の含有量は、ICP発光分析(誘導結合プラズマ発光分析)法によって求めた(後記する実施例2も同じ)。
スパッタガス:Ar、スパッタ圧力:3mTorr
エッチングガス:アルゴン/酸素/六フッ化硫黄混合ガス
エッチング時間:60秒
絶縁膜とAl合金膜の両方をエッチングするため、絶縁膜のエッチング時間に追加
して、時間換算で100%のオーバーエッチングを行なった。
比較のため、特許文献1と同様、Al合金膜の成膜後に後加熱処理を行った参照試料を作製した。
図1に示すケルビンパターン(コンタクトホールサイズ:80μm角)を用い、マニュアルプローバと半導体パラメータアナライザー「HP4156A」(ヒューレットパッカード社製)を用いて、Al合金膜とITO膜との間の接触電気抵抗を4端子法で測定した。4端子法では、ITO−Al合金に電流を流し、別の端子でITO−Al合金間の電圧降下を測定した。具体的には、図1のI1−I2間に電流Iを流し、V1−V2間の電圧Vをモニターすることにより、コンタクト部Cの接触電気抵抗Rを[R=(V1−V2)/I2]として求めた。
上記の方法によって本発明試料および参照試料を100個ずつ作製し、前述した方法に基づいて接触電気抵抗を測定した。次いで、前述した(1)式に基づき、本発明試料100個および参照試料100個の接触電気抵抗の分散係数σを算出した。
本実施例では、表2に示す様々な組成のAl合金を用い、酸化物透明導電膜がITOの場合について、実施例1と同様にして本発明試料および参照試料を100個ずつ作製し、接触電気抵抗の分散係数σを算出した。これらの結果を表2に併記する。表2において、本発明試料の接触電気抵抗の平均値は、参照試料の接触電気抵抗の平均値を1としたときの相対値で示している。表2には、前述した実施例1(Ni=0.5原子%)の結果も併記した。
2 対向基板
3 液晶層
4 薄膜トランジスタ(TFT)
5 透明画素電極
6 配線部
7 共通電極
8 カラーフィルタ
9 遮光膜
10a、10b 偏光板
11 配向膜
12 TABテープ
13 ドライバ回路
14 制御回路
15 スペーサー
16 シール材
17 保護膜
18 拡散板
19 プリズムシート
20 導光板
21 反射板
22 バックライト
23 保持フレーム
24 プリント基板
25 走査線
26 ゲート電極
27 ゲート絶縁膜
28 ソース電極
29 ドレイン電極
30 保護膜(シリコン窒化膜)
31 フォトレジスト
32 コンタクトホール
33 アモルファスシリコンチャネル膜(活性半導体膜)
34 信号線(ソース−ドレイン電極配線)
51、52、53 バリアメタル層
55 ノンドーピング水素化アモルファスシリコン膜(a−Si−H)
56 n+型水素化アモルファスシリコン膜(n+a−Si−H)
100 液晶表示装置
Claims (5)
- 基板上にて、酸化物透明導電膜とAl合金膜が直接接触する構造を備えた表示装置の製造方法であって、
前記Al合金膜は、Ag、Zn、Cu、およびNiよりなる群から選択される少なくとも一種の合金元素を0.5原子%以下含有し、
前記基板の温度を前記合金元素の析出温度以上に制御してAl合金膜の形成を行うことを特徴とする表示装置の製造方法。 - 前記合金元素はNiであり、前記基板の温度を250℃以上に制御するものである請求項1に記載の製造方法。
- 基板上にて、酸化物透明導電膜とAl合金膜が直接接触する構造を備えた表示装置であって、
前記Al合金膜は、Ag、Zn、Cu、およびNiよりなる群から選択される少なくとも一種の合金元素を0.5原子%以下含有し、
前記酸化物透明導電膜と前記Al合金膜との接触電気抵抗の分散を当該表示装置から得られた100個の試料に基づいてガウス分布で近似したとき、その分散係数σが0.5以下であることを特徴とする表示装置。 - 前記Al合金膜が、薄膜トランジスタの走査線の構成部材である請求項3に記載の表示装置。
- 前記Al合金膜が、薄膜トランジスタのドレイン電極の構成部材である請求項3に記載の表示装置。
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JP2007168286A JP2009010052A (ja) | 2007-06-26 | 2007-06-26 | 表示装置の製造方法 |
CNA2008100995921A CN101335202A (zh) | 2007-06-26 | 2008-05-15 | 显示装置的制造方法 |
US12/131,444 US20090011261A1 (en) | 2007-06-26 | 2008-06-02 | Method for manufacturing display apparatus |
TW097122674A TW200910459A (en) | 2007-06-26 | 2008-06-18 | Method for manufacturing display apparatus |
KR1020080059932A KR20080114573A (ko) | 2007-06-26 | 2008-06-25 | 표시 장치 및 표시 장치의 제조 방법 |
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JP (1) | JP2009010052A (ja) |
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US20090011261A1 (en) | 2009-01-08 |
CN101335202A (zh) | 2008-12-31 |
KR20080114573A (ko) | 2008-12-31 |
TW200910459A (en) | 2009-03-01 |
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