JP2007317934A - 半導体デバイスおよびアクティブマトリクス型表示装置 - Google Patents
半導体デバイスおよびアクティブマトリクス型表示装置 Download PDFInfo
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- 239000011159 matrix material Substances 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims abstract description 50
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- 229910052759 nickel Inorganic materials 0.000 claims abstract description 18
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 10
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- 238000004458 analytical method Methods 0.000 description 11
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- 239000010409 thin film Substances 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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Abstract
【解決手段】本発明にかかる半導体デバイスは、半導体層と、前記半導体層と電気的に接続されたAl合金膜と、前記Al合金膜と直接接触した透明電極層とを少なくとも透明絶縁基板上に備えた半導体デバイスであって、前記Al合金膜がFe、Co、Niから選ばれる1種類以上の元素を合計0.5〜10mol%含有し、残部が実質的にAlからなるものである。
【選択図】図2
Description
図1は、本実施形態1にかかるTFTアクティブマトリクス基板における画像表示領域の一画素分の平面図である。図2は、図1のX−X'断面図、並びにTFTアクティブマトリクス基板の画像表示領域の外側に形成される信号入力端子部の断面図(図1においては、当該部分は不図示)である。信号入力端子部として、走査信号が入力されるゲート端子および映像信号が入力されるソース端子を図示している。
本実施形態1の具体的な実施例を説明する。本実施例1にかかる第1の金属膜(ゲート電極2、補助容量電極3、ゲート配線4、ゲート端子5)および第2の金属膜(ドレイン電極9、ソース電極10)として、純Alに、3.0mol%Niを添加したAl−3.0mol%Ni合金膜を用いた。透明導電性膜(画素電極17、ゲート端子パッド18、ソース端子パッド19)としてITO膜を用いた。なお、Al合金膜の組成は、絶縁基板に形成されたAl合金膜を、例えば、王水などの酸性薬液に溶解し、ICP(Inductively Coupled Plasma)発光分光分析法により測定した。ICP発光分光分析装置としては、セイコーインスツルメンツ社製SPS−1200AR型を用いた。
次に、上記実施形態1のTFTアクティブマトリクス基板とは異なる実施形態について説明する。なお、以下の説明において、上記実施形態1と同一の構成部材は、同一の符号を付し、適宜その説明を省略する。
本実施形態2の具体的な実施例を説明する。本実施例2にかかる第1の金属膜(ゲート電極2、補助容量電極3、ゲート配線4、ゲート端子5)および第2の金属膜(ドレイン電極9、ソース電極10)として、純Alに、3.0mol%Niを添加したAl−3.0mol%Ni合金を用いた。透明導電性膜(画素電極17、ゲート端子パッド18、ソース端子パッド19)としてITO膜を用いた。
2 ゲート電極
3 補助容量共通電極
4 ゲート配線
5 ゲート端子
6 ゲート絶縁膜
7 半導体能動膜
8 オーミックコンタクト膜
9 ソース電極
10 ドレイン電極
11 ソース配線
12 TFTチャネル部
13 層間絶縁膜
14 画素ドレインコンタクトホール
15 ゲート端子コンタクトホール
16 ソース端子コンタクトホール
17 画素電極
18 ゲート端子パッド
19 ソース端子パッド
20 パッシベ−ション膜
21 接続膜
Claims (9)
- 半導体層と、前記半導体層と電気的に接続されたAl合金膜と、前記Al合金膜と直接接触した透明電極層とを少なくとも透明絶縁基板上に備えた半導体デバイスであって、前記Al合金膜がFe、Co、Niから選ばれる1種類以上の元素を合計0.5〜10mol%含有し、残部が実質的にAlからなる半導体デバイス。
- 前記Al合金膜がN、C、Siから選ばれる1種類以上の元素を合計5〜15mol%含有することを特徴とする請求項1に記載の半導体デバイス。
- 前記Al合金膜と前記透明電極層の界面領域において、前記透明電極層を構成する導電性の金属酸化物が存在するとともに、前記Al合金膜または前記透明電極層に含まれる金属元素の少なくとも1種類以上が酸化されていない状態で存在することを特徴とする請求項1または2に記載の半導体デバイス。
- 前記透明電極層がIn2O3またはSnO2からなることを特徴とする請求項1〜3のいずれか1項に記載の半導体デバイス。
- 前記透明電極層がIn2O3とSnO2の混合物ITOからなることを特徴とする請求項1〜3のいずれか1項に記載の半導体デバイス。
- 前記透明電極層がIn2O3とZnOの混合物IZOからなることを特徴とする請求項1〜3のいずれか1項に記載の半導体デバイス。
- 前記透明電極層がIn2O3とSnO2とZnOの混合物ITZOからなることを特徴とする請求項1〜3のいずれか1項に記載の半導体デバイス。
- 前記透明電極層をスパッタリング法により形成することを特徴とする請求項1〜7のいずれか1項に記載の半導体デバイス。
- 請求項1〜8のいずれか1項に記載の半導体デバイスを備えたアクティブマトリクス型表示装置。
Priority Applications (5)
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JP2006146724A JP4728170B2 (ja) | 2006-05-26 | 2006-05-26 | 半導体デバイスおよびアクティブマトリクス型表示装置 |
TW096114749A TWI333281B (en) | 2006-05-26 | 2007-04-26 | Semicinductor device and active matrix display device |
US11/741,193 US7910053B2 (en) | 2006-05-26 | 2007-04-27 | Semiconductor device and active matrix display device |
KR1020070050114A KR100857480B1 (ko) | 2006-05-26 | 2007-05-23 | 반도체 디바이스 및 액티브 매트릭스형 표시장치 |
CNB2007101063756A CN100573885C (zh) | 2006-05-26 | 2007-05-28 | 半导体器件和有源矩阵型显示装置 |
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JP2006146724A JP4728170B2 (ja) | 2006-05-26 | 2006-05-26 | 半導体デバイスおよびアクティブマトリクス型表示装置 |
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US (1) | US7910053B2 (ja) |
JP (1) | JP4728170B2 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009076536A (ja) * | 2007-09-19 | 2009-04-09 | Mitsubishi Electric Corp | Al合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板 |
WO2009144918A1 (ja) * | 2008-05-29 | 2009-12-03 | パナソニック株式会社 | 薄膜トランジスタと、その製造方法と、薄膜トランジスタを用いた電子機器 |
US8067774B2 (en) | 2008-08-20 | 2011-11-29 | Samsung Electronics Co., Ltd. | Thin film transistor panel and method of manufacturing the same |
KR20160064235A (ko) | 2011-09-28 | 2016-06-07 | 가부시키가이샤 고베 세이코쇼 | 표시 장치용 배선 구조 |
JP2019114799A (ja) * | 2008-11-07 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102483549A (zh) * | 2009-08-21 | 2012-05-30 | 夏普株式会社 | 液晶显示装置和液晶显示装置的制造方法 |
KR101830196B1 (ko) | 2010-02-12 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 구동 방법 |
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Also Published As
Publication number | Publication date |
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TW200746439A (en) | 2007-12-16 |
JP4728170B2 (ja) | 2011-07-20 |
CN101079431A (zh) | 2007-11-28 |
US20070284742A1 (en) | 2007-12-13 |
US7910053B2 (en) | 2011-03-22 |
KR100857480B1 (ko) | 2008-09-08 |
TWI333281B (en) | 2010-11-11 |
CN100573885C (zh) | 2009-12-23 |
KR20070113993A (ko) | 2007-11-29 |
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