JP2009280911A - 表示装置用Al合金膜、表示装置およびスパッタリングターゲット - Google Patents
表示装置用Al合金膜、表示装置およびスパッタリングターゲット Download PDFInfo
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- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 101
- 238000005477 sputtering target Methods 0.000 title claims description 17
- 239000010408 film Substances 0.000 claims abstract description 188
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 23
- 230000007797 corrosion Effects 0.000 abstract description 22
- 238000005260 corrosion Methods 0.000 abstract description 22
- 239000012789 electroconductive film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000004519 manufacturing process Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 26
- 229910045601 alloy Inorganic materials 0.000 description 22
- 239000000956 alloy Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 239000003513 alkali Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910000858 La alloy Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002559 palpation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- -1 pressure = 2 mTorr Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Optics & Photonics (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
【解決手段】表示装置の基板上で、透明導電膜と直接接続されるAl合金膜であって、該Al合金膜は、Coを0.05〜0.5原子%、およびGeを0.2〜1.0原子%含み、かつAl合金膜中のCo量とGe量が下記式(1)を満たすことを特徴とする表示装置用Al合金膜。
[Ge]≧−0.25×[Co]+0.2 …(1)
(式(1)中、[Ge]はAl合金膜中のGe量(原子%)、[Co]はAl合金膜中のCo量(原子%)を示す)
【選択図】なし
Description
[Ge]≧−0.25×[Co]+0.2 …(1)
(式(1)中、[Ge]はAl合金膜中のGe量(原子%)、[Co]はAl合金膜中のCo量(原子%)を示す)
[Ge]≧−0.25×[Co]+0.2 …(2)
(式(2)中、[Ge]はスパッタリングターゲット中のGe量(原子%)、[Co]はスパッタリングターゲット中のCo量(原子%)を示す)
[Ge]≧−0.25×[Co]+0.2 …(1)
(式(1)中、[Ge]はAl合金膜中のGe量(原子%)、[Co]はAl合金膜中のCo量(原子%)を示す)
[Ge]≧−0.25×[Co]+0.25 …(3)
[Ge]≧−0.25×[Co]+0.3 …(4)
(式(3)(4)中、[Ge]はAl合金膜中のGe量(原子%)、[Co]はAl合金膜中のCo量(原子%)を示す)
[Ge]≧−0.25×[Co]+0.2 …(2)
[Ge]≧−0.25×[Co]+0.25 …(5)
[Ge]≧−0.25×[Co]+0.3 …(6)
(式(2)(5)(6)中、[Ge]はスパッタリングターゲット中のGe量(原子%)、[Co]はスパッタリングターゲット中のCo量(原子%)を示す)
・ソース電極および/またはドレイン電極並びに信号線に用いられ、ドレイン電極が透明導電膜に直接接続されているもの;および/または、
・ゲート電極および走査線に用いられているもの;が挙げられる。
図2を参照しながら、アモルファスシリコンTFT基板の実施形態を詳細に説明する。
図11を参照しながら、ポリシリコンTFT基板の実施形態を詳細に説明する。
上記Al合金膜に対し、10μm幅のラインアンドスペースパターンを形成し、不活性ガス雰囲気中、270℃で15分間の熱処理を施してから、4端子法で電気抵抗率を測定した。そして下記基準で、熱処理後のAl合金膜自体の電気抵抗率の良否を判定した。
(判定基準)
○:4.6μΩ・cm未満
×:4.6μΩ・cm以上
Al合金膜と透明画素電極を直接接触したときの接触電気抵抗は、透明画素電極(ITO;酸化インジウムに10原子%の酸化スズを加えた酸化インジウムスズ)を、下記条件でスパッタリングすることによって図19に示すケルビンパターン(コンタクトホールサイズ:10μm角)を作製し、4端子測定(ITO−Al合金膜に電流を流し、別の端子でITO−Al合金間の電圧降下を測定する方法)を行なった。具体的には、図19のI1−I2間に電流Iを流し、V1−V2間の電圧Vをモニターすることにより、コンタクト部Cのダイレクト接触抵抗Rを[R=(V2−V1)/I2]として求めた。そして下記基準で、ITOとのダイレクト接触抵抗の良否を判定した。
(透明画素電極の成膜条件)
・雰囲気ガス=アルゴン
・圧力=0.8mTorr
・基板温度=25℃(室温)
(判定基準)
○:1000Ω未満
×:1000Ω以上
基板上に成膜したAl合金膜にマスクを施した後、現像液(TMAH2.38質量%を含む水溶液)中に25℃で1分間浸漬し、そのエッチング量を触診式段差計を用いて測定した。そして、下記基準でアルカリ現像液耐性の良否を判定した。
(判定基準)
○:60nm未満/分
△:60nm以上100nm以下/分
×:100nm超/分
フォトレジスト剥離液の洗浄工程を模擬し、アミン系フォトレジストと水を混合したアルカリ性水溶液による腐食実験を行った。詳細には、東京応化工業(株)製のアミン系レジスト剥離液「TOK106」水溶液をpH10に調整したもの(液温25℃)を用意し、これに、上記Al合金膜に不活性ガス雰囲気中330℃で30分間の熱処理を施したものを300秒間浸漬させた。そして、浸漬後の膜表面にみられるクレータ状の腐食(孔食)痕(円相当直径が150nm以上のもの)の個数を調べた(観察倍率は1000倍)。そして、下記基準で剥離液耐性の良否を判定した。
(判定基準)
○:10個未満/100μm2
△:10個以上20個以下/100μm2
×:20個超/100μm2
基板上に成膜したAl合金膜に、窒素雰囲気中、350℃で30分間の熱処理を行った後、表面性状を、光学顕微鏡(倍率:500倍)を用いて観察し、目視でヒロックの有無を確認した。そして、下記判定基準により耐熱性を評価した。
(判定基準)
○:ヒロックなしかつ表面荒れもなし
△:ヒロックないが表面荒れがあり
×:ヒロックあり
2 対向基板
3 液晶層
4 薄膜トランジスタ(TFT)
5 透明画素電極(透明導電膜)
6 配線部
7 共通電極
8 カラーフィルタ
9 遮光膜
10 偏光板
11 配向膜
12 TABテープ
13 ドライバ回路
14 制御回路
15 スペーサー
16 シール材
17 保護膜
18 拡散板
19 プリズムシート
20 導光板
21 反射板
22 バックライト
23 保持フレーム
24 プリント基板
25 走査線
26 ゲート電極
27 ゲート絶縁膜
28 ソース電極
29 ドレイン電極
30 保護膜(窒化シリコン膜)
31 フォトレジスト(層)
32 コンタクトホール
33 アモルファスシリコンチャネル膜(活性半導体膜)
34 信号線
52、53 バリアメタル層
55 ノンドーピング水素化アモルファスシリコン膜(a−Si−H)
56 n+型水素化アモルファスシリコン膜(n+a−Si−H)
Claims (7)
- 表示装置の基板上で、透明導電膜と直接接続されるAl合金膜であって、
該Al合金膜は、Coを0.05〜0.5原子%、およびGeを0.2〜1.0原子%含み、かつAl合金膜中のCo量とGe量が下記式(1)を満たすことを特徴とする表示装置用Al合金膜。
[Ge]≧−0.25×[Co]+0.2 …(1)
(式(1)中、[Ge]はAl合金膜中のGe量(原子%)、[Co]はAl合金膜中のCo量(原子%)を示す) - 更に、希土類元素群から選ばれる少なくとも1種の元素を合計で0.05〜0.7原子%含む請求項1に記載の表示装置用Al合金膜。
- 前記希土類元素群は、Nd、Gd、La、Y、Ce、Pr、Dyよりなるものである請求項2に記載の表示装置用Al合金膜。
- 請求項1〜3のいずれかに記載の表示装置用Al合金膜が、薄膜トランジスタに用いられていることを特徴とする表示装置。
- Coを0.05〜0.5原子%、およびGeを0.2〜1.0原子%含み、かつ該Co量とGe量が下記式(2)を満たし、残部がAlおよび不可避不純物であることを特徴とするスパッタリングターゲット。
[Ge]≧−0.25×[Co]+0.2 …(2)
(式(2)中、[Ge]はスパッタリングターゲット中のGe量(原子%)、[Co]はスパッタリングターゲット中のCo量(原子%)を示す) - 更に、希土類元素群から選ばれる少なくとも1種の元素を合計で0.05〜0.7原子%含む請求項5に記載のスパッタリングターゲット。
- 前記希土類元素群は、Nd、Gd、La、Y、Ce、Pr、Dyよりなるものである請求項6に記載のスパッタリングターゲット。
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JP (1) | JP5368867B2 (ja) |
KR (1) | KR20100127290A (ja) |
TW (1) | TWI395333B (ja) |
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JP4567091B1 (ja) | 2009-01-16 | 2010-10-20 | 株式会社神戸製鋼所 | 表示装置用Cu合金膜および表示装置 |
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JP2012180540A (ja) | 2011-02-28 | 2012-09-20 | Kobe Steel Ltd | 表示装置および半導体装置用Al合金膜 |
JP5524905B2 (ja) | 2011-05-17 | 2014-06-18 | 株式会社神戸製鋼所 | パワー半導体素子用Al合金膜 |
JP2013084907A (ja) | 2011-09-28 | 2013-05-09 | Kobe Steel Ltd | 表示装置用配線構造 |
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US20160345425A1 (en) * | 2014-02-07 | 2016-11-24 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Wiring film for flat panel display |
CN104962871B (zh) * | 2015-05-25 | 2018-04-27 | 同济大学 | 一种高导电性铝合金薄膜及其制备方法 |
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- 2009-04-23 US US12/922,965 patent/US8422207B2/en not_active Expired - Fee Related
- 2009-04-23 KR KR1020107023592A patent/KR20100127290A/ko not_active Application Discontinuation
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Also Published As
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TW201005949A (en) | 2010-02-01 |
WO2009131169A1 (ja) | 2009-10-29 |
US20110019350A1 (en) | 2011-01-27 |
TWI395333B (zh) | 2013-05-01 |
US8422207B2 (en) | 2013-04-16 |
JP5368867B2 (ja) | 2013-12-18 |
KR20100127290A (ko) | 2010-12-03 |
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