JP4865197B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4865197B2
JP4865197B2 JP2004194690A JP2004194690A JP4865197B2 JP 4865197 B2 JP4865197 B2 JP 4865197B2 JP 2004194690 A JP2004194690 A JP 2004194690A JP 2004194690 A JP2004194690 A JP 2004194690A JP 4865197 B2 JP4865197 B2 JP 4865197B2
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Japan
Prior art keywords
semiconductor device
semiconductor element
semiconductor
wiring
electrode
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Expired - Lifetime
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JP2004194690A
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English (en)
Japanese (ja)
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JP2006019433A (ja
JP2006019433A5 (enExample
Inventor
洋一郎 栗田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2004194690A priority Critical patent/JP4865197B2/ja
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to US11/159,157 priority patent/US7795721B2/en
Publication of JP2006019433A publication Critical patent/JP2006019433A/ja
Publication of JP2006019433A5 publication Critical patent/JP2006019433A5/ja
Priority to US12/169,930 priority patent/US8193033B2/en
Priority to US12/850,232 priority patent/US8207605B2/en
Application granted granted Critical
Publication of JP4865197B2 publication Critical patent/JP4865197B2/ja
Priority to US13/495,494 priority patent/US8541874B2/en
Priority to US13/972,162 priority patent/US8890305B2/en
Priority to US14/524,718 priority patent/US9324699B2/en
Priority to US15/072,803 priority patent/US20160204092A1/en
Priority to US16/375,282 priority patent/US10672750B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004194690A 2004-06-30 2004-06-30 半導体装置およびその製造方法 Expired - Lifetime JP4865197B2 (ja)

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JP2004194690A JP4865197B2 (ja) 2004-06-30 2004-06-30 半導体装置およびその製造方法
US11/159,157 US7795721B2 (en) 2004-06-30 2005-06-23 Semiconductor device and method for manufacturing the same
US12/169,930 US8193033B2 (en) 2004-06-30 2008-07-09 Semiconductor device having a sealing resin and method of manufacturing the same
US12/850,232 US8207605B2 (en) 2004-06-30 2010-08-04 Semiconductor device having a sealing resin and method of manufacturing the same
US13/495,494 US8541874B2 (en) 2004-06-30 2012-06-13 Semiconductor device
US13/972,162 US8890305B2 (en) 2004-06-30 2013-08-21 Semiconductor device
US14/524,718 US9324699B2 (en) 2004-06-30 2014-10-27 Semiconductor device
US15/072,803 US20160204092A1 (en) 2004-06-30 2016-03-17 Semiconductor device
US16/375,282 US10672750B2 (en) 2004-06-30 2019-04-04 Semiconductor device

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KR20200031322A (ko) 2018-09-14 2020-03-24 삼성전기주식회사 전자 소자 모듈 및 그 제조 방법
US10991673B2 (en) 2018-01-04 2021-04-27 Kabushiki Kaisha Toshiba Electronic device

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JP4880218B2 (ja) * 2004-12-22 2012-02-22 三洋電機株式会社 回路装置
JP2006216911A (ja) * 2005-02-07 2006-08-17 Renesas Technology Corp 半導体装置およびカプセル型半導体パッケージ
JP4507101B2 (ja) 2005-06-30 2010-07-21 エルピーダメモリ株式会社 半導体記憶装置及びその製造方法
JP4787559B2 (ja) * 2005-07-26 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20070252260A1 (en) * 2006-04-28 2007-11-01 Micron Technology, Inc. Stacked die packages
JP2008016508A (ja) * 2006-07-03 2008-01-24 Nec Electronics Corp 半導体装置およびその製造方法
JP2008091638A (ja) 2006-10-02 2008-04-17 Nec Electronics Corp 電子装置およびその製造方法
CN101361182B (zh) * 2006-11-30 2011-09-14 松下电器产业株式会社 无源部件内置式内插板
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US20080265434A1 (en) 2008-10-30
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US20190229104A1 (en) 2019-07-25
US20120248620A1 (en) 2012-10-04
US20150041978A1 (en) 2015-02-12
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US8193033B2 (en) 2012-06-05
US20160204092A1 (en) 2016-07-14

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