JP4897451B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4897451B2 JP4897451B2 JP2006327323A JP2006327323A JP4897451B2 JP 4897451 B2 JP4897451 B2 JP 4897451B2 JP 2006327323 A JP2006327323 A JP 2006327323A JP 2006327323 A JP2006327323 A JP 2006327323A JP 4897451 B2 JP4897451 B2 JP 4897451B2
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Description
半導体チップを備える半導体装置であって、
配線基板と、
前記配線基板の第1面上に設けられ、前記半導体チップからの信号を伝送する伝送路と、
前記配線基板の前記第1面の上方に設けられたグランドプレーンと、を備え、
前記伝送路の少なくとも一部は、前記グランドプレーンと共にマイクロストリップ線路を構成しており、
前記伝送路は、前記マイクロストリップ線路を構成する第1の部分と、前記第1の部分に連設され、前記配線基板の前記第1面上に設けられたグランド線と共にコプレーナ線路を構成する第2の部分と、を含んでいることを特徴とする半導体装置が提供される。
10 半導体チップ
12 シリコン基板
14 配線層
15 グランド配線
20 パッケージ基板
22 絶縁膜
30 伝送路
30a 第1の部分
30b 第2の部分
31a 接続部
31b 接続部
32 グランド線
33a 接続部
33b 接続部
34 電源線
36 グランド線
40 ダミーチップ
42 シリコン基板
43 絶縁層
44 電源プレーン
46 グランドプレーン
47 信号線
48 信号線
49 貫通電極
50 半田ボール
52 導体プラグ
62 アンダーフィル樹脂
64 封止樹脂
70 半導体チップ
72 導体バンプ
74 アンダーフィル樹脂
82 導体バンプ
84 導体バンプ
90 支持基板
91 シード膜
92 シード膜
93 フォトレジスト
Claims (11)
- 半導体チップを備える半導体装置であって、
配線基板と、
前記配線基板の第1面上に設けられ、前記半導体チップからの信号を伝送する伝送路と、
前記配線基板の前記第1面の上方に設けられたグランドプレーンと、を備え、
前記伝送路の少なくとも一部は、前記グランドプレーンと共にマイクロストリップ線路を構成しており、
前記伝送路は、前記マイクロストリップ線路を構成する第1の部分と、前記第1の部分に連設され、前記配線基板の前記第1面上に設けられたグランド線と共にコプレーナ線路を構成する第2の部分と、を含んでいることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記配線基板の前記第1面上に実装され、前記グランドプレーンを有する回路部品を備える半導体装置。 - 請求項1または2に記載の半導体装置において、
前記グランドプレーンは、前記伝送路の前記第1および第2の部分のうち、前記第1の部分にのみ対向している半導体装置。 - 請求項2に記載の半導体装置において、
前記回路部品は、フリップチップボンディングによって、前記配線基板の前記第1面上に実装されている半導体装置。 - 請求項2又は4に記載の半導体装置において、
前記回路部品は、ダミーチップである半導体装置。 - 請求項2、4及び5のいずれか1項に記載の半導体装置において、
前記半導体チップは、前記回路部品上に実装されている半導体装置。 - 請求項6に記載の半導体装置において、
前記半導体チップが複数の半導体チップの積層体からなる半導体装置。 - 請求項6または7に記載の半導体装置において、
前記配線基板の前記第1面と反対側の面である第2面上に実装された第2の半導体チップをさらに備える半導体装置。 - 請求項8に記載の半導体装置において、
前記配線基板は、前記配線基板を貫通する導体プラグをさらに備え、
前記導体プラグは、前記配線基板の前記第1面上に設けられた前記伝送路と、前記配線基板の前記第2面上に設けられた外部電極端子とを接続する半導体装置。 - 請求項1乃至9のいずれか1項に記載の半導体装置において、
前記配線基板の前記第1面と反対側の面である第2面上には、グランドプレーンおよびグランド線が設けられていない半導体装置。 - 請求項2、4及び5のいずれか1項に記載の半導体装置において、
前記半導体チップおよび前記回路部品は、前記配線基板の前記第1面の相異なる領域上に、フリップチップボンディングによって、実装されている半導体装置。
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JP2006327323A JP4897451B2 (ja) | 2006-12-04 | 2006-12-04 | 半導体装置 |
US11/987,624 US20080128916A1 (en) | 2006-12-04 | 2007-12-03 | Semiconductor device including microstrip line and coplanar line |
CNA2007101865136A CN101197343A (zh) | 2006-12-04 | 2007-12-04 | 包括有微带线和共面线的半导体器件 |
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JP2006327323A JP4897451B2 (ja) | 2006-12-04 | 2006-12-04 | 半導体装置 |
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