JP7163224B2 - 電子装置 - Google Patents
電子装置 Download PDFInfo
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- JP7163224B2 JP7163224B2 JP2019048036A JP2019048036A JP7163224B2 JP 7163224 B2 JP7163224 B2 JP 7163224B2 JP 2019048036 A JP2019048036 A JP 2019048036A JP 2019048036 A JP2019048036 A JP 2019048036A JP 7163224 B2 JP7163224 B2 JP 7163224B2
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Description
本願において、実施の態様の記載は、必要に応じて、便宜上複数のセクション等に分けて記載するが、特にそうでない旨明示した場合を除き、これらは相互に独立別個のものではなく、記載の前後を問わず、単一の例の各部分、一方が他方の一部詳細または一部または全部の変形例等である。また、原則として、同様の部分は繰り返しの説明を省略する。また、実施の態様における各構成要素は、特にそうでない旨明示した場合、理論的にその数に限定される場合および文脈から明らかにそうでない場合を除き、必須のものではない。
まず、本実施の形態の電子装置ED1の概要構成について、図1~図4を用いて説明する。図1は本実施の形態の電子装置の上面図である。図1では、配線部WP1において、メモリ部品MP1およびMP2が搭載される上面WP1tと反対側の面に搭載されるロジックチップLC1の輪郭を点線で示している。図2は、図1のA-A線に沿った断面図である。図3は、図1に示す電子装置の下面図である。図3は平面図であるが、複数の半田ボールSB1のそれぞれに模様を付している。半田ボールSB1に付された模様は、信号伝送用、電源電位供給用、基準電位供給用など、流れる電流の種類に応じて区別されている。図3では、平面図の下方に半田ボールSB1の種類の凡例を示している。図4は、図2に示す電子装置の回路構成例を示す回路ブロック図である。図4では、配線部WP1の範囲を明示するため、配線部WP1に対応する部分に模様を付している。
電子装置ED1の場合、図4に示すように、信号伝送経路SGP1、SGP2、電源電位供給経路VDMP、VDL1P、VDL2P、および基準電位供給経路VSPのそれぞれが配線部WP1に形成される。したがって、電子装置ED1の小型化の観点から、多数の配線を効率的に配置することが好ましい。また、電子装置ED1が有する各種回路を安定的に動作させる観点から、各種回路を駆動する駆動電圧の供給経路の伝送ロスを低減することが好ましい。
図7は、図2に示す封止体上の配線部の最下層の配線レイアウトの一例を示す平面図である。図8は、図2に示す封止体上の配線部の最上層と最下層との間の配線層のレイアウトの一例を示す平面図である。図9は、図2に示す封止体上の配線部の最上層の配線層のレイアウトの一例を示す平面図である。図7~図9では、各配線層に形成される多数の配線の一部を例示している。図7~図9では、複数の導体パターンに流れる電流の種類を識別し易くするため、図5および図6と同様のルールで、導体パターンに模様を付している。図9において、白抜きで示している導体パターンは、図4に示す信号伝送経路SGP1に含まれ、半田バンプSB2を介してメモリ部品MPの端子PDMおよびに接続されるパッドである。
ED1,ED2 電子装置
IOL,IOM 入出力回路
LC1 ロジックチップ(半導体チップ、半導体部品、半導体装置)
MP,MP1,MP2 メモリ部品(半導体部品、メモリパッケージ、半導体装置)
MR 封止体
MRb 下面(面、主面)
MRs1,MRs2,MRs3,MRs4 辺
MRt 上面(面、主面)
PDL,PDM 端子(電極、電極パッド)
PLVD21,PLVD23,PLVS1,PLVS2 導体パターン
R1,R2,R3,R4 領域
RAM メモリ回路
SB1,SB1sg,SB1v1,SB1v2,SB1vm,SB1vs, 半田ボール(外部端子、端子)
SB2,SB3 半田バンプ(突起電極、接続端子)
SG1,SG2 信号(電気信号)
SGP1,SGP2 信号伝送経路
TV,TV1,TV2,TV3,TV4,TVS 貫通導体
VDL1,VDL2,VDM 電源電位
VDL1P,VDL2P,VDMP 電源電位供給経路
VS 基準電位
VSP 基準電位供給経路
WL1,WL2,WL3,WL4 配線層
WP1,WP2 配線部
WP1b,WP2b 下面
WP1t 上面
WPs1,WPs2,WPs3,WPs4 辺
WSG1,WSG2,WV1,WVM 配線
Claims (8)
- 第1面、および前記第1面の反対側に位置する第2面、を有し、第1半導体部品を封止する封止体と、
前記第1面上に形成された第1配線部と、
前記第2面上に形成された第2配線部と、
前記封止体を貫通し、前記第1配線部と前記第2配線部とを電気的に接続する複数の貫通導体と、
前記第1配線部上に搭載された第2半導体部品と、
を有し、
前記第1半導体部品は、前記第1配線部、および前記複数の貫通導体を介して前記第2配線部と電気的に接続され、
前記第2半導体部品は、前記第1配線部を介して前記第1半導体部品と電気的に接続され、
前記封止体の前記第1面は、
前記第1半導体部品が配置された第1領域と、
前記第1面の周縁部側に位置する第2領域と、
前記第2領域と前記第1領域の間にある第3領域と、
前記第2領域と前記第3領域の間にある第4領域と、
を有し、
前記第2領域に配置される前記複数の貫通導体の数は、前記第3領域に配置される前記複数の貫通導体の数、および前記第4領域に配置される前記複数の貫通導体の数、のそれぞれより多く、
前記第3領域に配置される前記複数の貫通導体の数は、前記第4領域に配置される前記複数の貫通導体の数より多く、
前記複数の貫通導体は、
前記第1半導体部品と電気的に接続され、信号が伝送される複数の第1貫通導体と、
前記第1半導体部品と電気的に接続され、前記第1半導体部品の入出力回路に駆動電位を供給する複数の第2貫通導体と、
前記第2半導体部品と電気的に接続され、前記第2半導体部品に駆動電位を供給する複数の第3貫通導体と、
を含み、
前記複数の第1貫通導体は、前記第2領域に最も多く配置され、
前記複数の第2貫通導体は、前記第3領域に最も多く配置され、
前記第1配線部は、
前記第1半導体部品と前記第2半導体部品との間で信号を伝送する複数の第1信号伝送経路と、
前記第1半導体部品と前記複数の第1貫通導体との間で信号を伝送する複数の第2信号伝送経路と、
前記第2半導体部品が搭載される側から順に積層される、第1配線層、第2配線層、および第3配線層と、
を有し、
前記複数の第1信号伝送経路は、前記第1配線層、前記第2配線層、および前記第3配線層のそれぞれに形成され、
前記複数の第2信号伝送経路は、前記第3配線層に形成され、
前記複数の第2信号伝送経路は、前記第1配線層および前記第2配線層を経由せずに前記第1半導体部品と前記複数の第1貫通導体とを電気的に接続され、
前記第3配線層は、
前記複数の第1信号伝送経路に含まれる複数の第1配線と、
前記複数の第2信号伝送経路に含まれる複数の第2配線と、
を有し、
前記第2配線層は、基準電位が供給される第1導体パターンを有し、
前記第1導体パターンは、前記複数の第2配線のそれぞれと重なる、電子装置。 - 第1面、および前記第1面の反対側に位置する第2面、を有し、第1半導体部品を封止する封止体と、
前記第1面上に形成された第1配線部と、
前記第2面上に形成された第2配線部と、
前記封止体を貫通し、前記第1配線部と前記第2配線部とを電気的に接続する複数の貫通導体と、
前記第1配線部上に搭載された第2半導体部品と、
を有し、
前記第1半導体部品は、前記第1配線部、および前記複数の貫通導体を介して前記第2配線部と電気的に接続され、
前記第2半導体部品は、前記第1配線部を介して前記第1半導体部品と電気的に接続され、
前記封止体の前記第1面は、
前記第1半導体部品が配置された第1領域と、
前記第1面の周縁部側に位置する第2領域と、
前記第2領域と前記第1領域の間にある第3領域と、
前記第2領域と前記第3領域の間にある第4領域と、
を有し、
前記第2領域に配置される前記複数の貫通導体の数は、前記第3領域に配置される前記複数の貫通導体の数、および前記第4領域に配置される前記複数の貫通導体の数、のそれぞれより多く、
前記第3領域に配置される前記複数の貫通導体の数は、前記第4領域に配置される前記複数の貫通導体の数より多く、
前記複数の貫通導体は、
前記第1半導体部品と電気的に接続され、信号が伝送される複数の第1貫通導体と、
前記第1半導体部品と電気的に接続され、前記第1半導体部品の入出力回路に駆動電位を供給する複数の第2貫通導体と、
前記第2半導体部品と電気的に接続され、前記第2半導体部品に駆動電位を供給する複数の第3貫通導体と、
を含み、
前記複数の第1貫通導体は、前記第2領域に最も多く配置され、
前記複数の第2貫通導体は、前記第3領域に最も多く配置され、
前記第1配線部は、
前記第1半導体部品と前記第2半導体部品との間で信号を伝送する複数の第1信号伝送経路と、
前記第1半導体部品と前記複数の第1貫通導体との間で信号を伝送する複数の第2信号伝送経路と、
前記第2半導体部品が搭載される側から順に積層される、第1配線層、第2配線層、および第3配線層と、
を有し、
前記複数の第1信号伝送経路は、前記第1配線層、前記第2配線層、および前記第3配線層のそれぞれに形成され、
前記複数の第2信号伝送経路は、前記第3配線層に形成され、
前記複数の貫通導体は、前記第1配線部の前記第1配線層に形成された第2導体パターンを介して前記第1半導体部品と電気的に接続され、前記第1半導体部品のコア回路に駆動電位を供給する複数の第4貫通導体を有し、
前記封止体の前記第1面は、第1辺、前記第1辺の反対側の第2辺、前記第1辺および前記第2辺と交差する第3辺、および前記第3辺の反対側の第4辺を有し、
前記複数の第4貫通導体の一部は、前記第1辺と前記第1領域の間に、互いに隣り合うように、前記第1辺側から前記第1領域に向かって配列される、電子装置。 - 請求項2において、
前記複数の第4貫通導体は、前記第1面の前記第2領域および前記第4領域に配置され、かつ、前記第3領域には配置されない、電子装置。 - 請求項3において、
前記複数の第4貫通導体は、前記第3辺と前記第1領域との間、および前記第4辺と前記第1領域との間、には配置されない、電子装置。 - 請求項2において、
前記複数の第4貫通導体の他の一部は、前記第2辺と前記第1領域の間に、互いに隣り合うように、前記第2辺側から前記第1領域に向かって配列される、電子装置。 - 請求項5において、
前記複数の第4貫通導体は、前記第1面の前記第2領域および前記第4領域に配置され、かつ、前記第3領域、前記第3辺と前記第1領域との間、および前記第4辺と前記第1領域との間、のそれぞれには配置されない、電子装置。 - 請求項1において、
前記第2半導体部品側から視た透視平面視において、前記複数の第3貫通導体は前記第2半導体部品と重なる、電子装置。 - 第1面、および前記第1面の反対側に位置する第2面、を有し、第1半導体部品を封止する封止体と、
前記第1面上に形成された第1配線部と、
前記第2面上に形成された第2配線部と、
前記封止体を貫通し、前記第1配線部と前記第2配線部とを電気的に接続する複数の貫通導体と、
前記第1配線部上に搭載された第2半導体部品と、
を有し、
前記第1半導体部品は、前記第1配線部、および前記複数の貫通導体を介して前記第2配線部と電気的に接続され、
前記第2半導体部品は、前記第1配線部を介して前記第1半導体部品と電気的に接続され、
前記封止体の前記第1面側から視た透視平面視において、前記第1面は、
前記第1半導体部品が配置された第1領域と、
前記第1面の周縁部側に位置する第2領域と、
前記第2領域と前記第1領域の間にある第3領域と、
前記第2領域と前記第3領域の間にある第4領域と、
を含み、
前記第2領域に配置される前記複数の貫通導体の配置密度は、前記第3領域および前記第4領域に配置される前記複数の貫通導体の配置密度より高く、
前記第4領域に配置される前記複数の貫通導体の配置密度は、前記第3領域に配置される前記複数の貫通導体の配置密度より低く、
前記複数の貫通導体は、
前記第1半導体部品と電気的に接続され、信号が伝送される複数の第1貫通導体と、
前記第1半導体部品と電気的に接続され、前記第1半導体部品の入出力回路に駆動電位を供給する複数の第2貫通導体と、
前記第2半導体部品と電気的に接続され、前記第2半導体部品に駆動電位を供給する複数の第3貫通導体と、
を含み、
前記複数の第1貫通導体は、前記第2領域に最も多く配置され、
前記複数の第2貫通導体は、前記第3領域に最も多く配置され、
前記第1配線部は、
前記第1半導体部品と前記第2半導体部品との間で信号を伝送する複数の第1信号伝送経路と、
前記第1半導体部品と前記複数の第1貫通導体との間で信号を伝送する複数の第2信号伝送経路と、
前記第2半導体部品が搭載される側から順に積層される、第1配線層、第2配線層、および第3配線層と、
を有し、
前記複数の第1信号伝送経路は、前記第1配線層、前記第2配線層、および前記第3配線層のそれぞれに形成され、
前記複数の第2信号伝送経路は、前記第3配線層に形成され、
前記複数の貫通導体は、前記第1配線部の前記第1配線層に形成された第2導体パターンを介して前記第1半導体部品と電気的に接続され、前記第1半導体部品のコア回路に駆動電位を供給する複数の第4貫通導体を有し、
前記封止体の前記第1面は、第1辺、前記第1辺の反対側の第2辺、前記第1辺および前記第2辺と交差する第3辺、および前記第3辺の反対側の第4辺を有し、
前記複数の第4貫通導体の一部は、前記第1辺と前記第1領域の間に、互いに隣り合うように、前記第1辺側から前記第1領域に向かって配列される、電子装置。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019433A (ja) | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2015195263A (ja) | 2014-03-31 | 2015-11-05 | マイクロン テクノロジー, インク. | 半導体装置及びその製造方法 |
JP2017507499A (ja) | 2014-12-19 | 2017-03-16 | インテル アイピー コーポレーション | 改善された相互接続の帯域幅を有する積層半導体デバイスパッケージ |
WO2017138121A1 (ja) | 2016-02-10 | 2017-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018093162A (ja) | 2016-12-06 | 2018-06-14 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファン−アウト半導体パッケージ |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019433A (ja) | 2004-06-30 | 2006-01-19 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2015195263A (ja) | 2014-03-31 | 2015-11-05 | マイクロン テクノロジー, インク. | 半導体装置及びその製造方法 |
JP2017507499A (ja) | 2014-12-19 | 2017-03-16 | インテル アイピー コーポレーション | 改善された相互接続の帯域幅を有する積層半導体デバイスパッケージ |
WO2017138121A1 (ja) | 2016-02-10 | 2017-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2018093162A (ja) | 2016-12-06 | 2018-06-14 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ファン−アウト半導体パッケージ |
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