CN111788675B - 高频模块 - Google Patents
高频模块 Download PDFInfo
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- CN111788675B CN111788675B CN201980016030.2A CN201980016030A CN111788675B CN 111788675 B CN111788675 B CN 111788675B CN 201980016030 A CN201980016030 A CN 201980016030A CN 111788675 B CN111788675 B CN 111788675B
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Abstract
本发明提供一种通过调整表面粗糙度,来防止镀层的异常析出,并抑制朝向部件的裂缝的产生的高频模块。高频模块(1a)具备:布线基板(2)、安装于该布线基板(2)的下表面(2a)的第一部件(3a)、多个连接端子(4)、覆盖第一部件(3a)以及连接端子(4)的第一密封树脂层(5)、安装于布线基板(2)的上表面(2b)的多个第二部件(3b)、覆盖第二部件(3b)的第二密封树脂层(6)、以及屏蔽膜(7)。通过调整第一密封树脂层(5)的下表面(5a)、第一部件(3a)的下表面(30a)、连接端子(4)的下表面(4a)的表面粗糙度,能够防止镀层异常析出、第一部件(3a)的裂缝,并防止高频模块(1a)的动作不良。
Description
技术领域
本发明涉及在布线基板的一个主面上安装部件,且部件被密封树脂层覆盖的高频模块。
背景技术
以往,提出了如图9所示的模块100那样,在布线基板101的上表面101a安装有用第一密封树脂层103密封的多个部件102,并在布线基板101的下表面101b安装有用第二密封树脂层106密封的半导体部件104和连接端子105的高频模块。在这样的模块100中,在安装有发热性较高的半导体部件104的情况下,有因从半导体部件104产生的热量而在模块100中产生不良状况的情况。因此,需要将从半导体部件104产生的热量散热到模块外。
因此,在模块100中,为了提高散热性,使热传导率较高的半导体部件104的表面104a从第二密封树脂层106露出,来实现散热性较高的高频模块。
专利文献1:国际公开第2014/017159号(参照第0033~0048段,图4等)
然而,在专利文献1所记载的结构中,当在连接端子105施加镀层的情况下,在存在于半导体部件104与连接端子105之间的树脂层106的露出面上,有镀层异常析出的情况。该树脂层的露出面有将连接端子的周围绝缘的作用,但若在这里镀层析出,则产生连接端子间的短路不良,而成为模块的动作不良的原因。
发明内容
本发明是鉴于上述的课题而完成的,其目的在于提供一种通过调整密封树脂层、连接端子、以及部件的表面粗糙度,来确保散热性,并且抑制镀层的异常析出的高频模块。
为了实现上述的目的,本发明的高频模块的特征在于,具备:布线基板;第一部件,安装于上述布线基板的一个主面;第一密封树脂层,具有抵接于上述布线基板的上述一个主面的抵接面、与该抵接面对置的对置面、以及连接上述抵接面和上述对置面的边缘彼此的侧面,并密封上述第一部件;以及连接端子,埋设于上述第一密封树脂层,上述第一部件的与安装面相反侧的背面从上述第一密封树脂层的上述对置面露出,上述连接端子的一个端部与上述布线基板的上述一个主面连接,上述连接端子的另一个端部从上述第一密封树脂层的上述对置面露出,上述第一部件的上述背面的表面粗糙度比上述连接端子的另一个端部的表面粗糙度小,上述第一密封树脂层的上述对置面的表面粗糙度比上述第一部件的上述背面的表面粗糙度小。
根据该结构,通过使密封树脂层的对置面以及第一部件的背面的表面粗糙度比连接端子的另一个端部的表面粗糙度小,能够在对连接端子的另一个端部实施镀层时,难以留下成为镀层异常析出的原因的核,并能够抑制镀层异常析出。进一步,通过使密封树脂层的对置面的表面粗糙度比第一部件的背面的表面粗糙度小,能够防止连接端子间的短路不良。
另外,也可以上述第一部件的垂直于上述布线基板的上述一个主面的方向上的厚度为5μm以上100μm以下,且上述第一部件的上述背面的表面粗糙度为0.005μm以上0.1μm以下。
根据该结构,通过将第一部件的厚度研磨到100μm以下,能够使高频模块薄型化。另外,通过使第一部件的背面的表面粗糙度成为0.1μm以下,能够防止在第一部件的背面产生成为裂缝的起点的部分,并能够防止第一部件的破损。
另外,也可以在上述布线基板的上述一个主面安装有多个上述第一部件以及多个上述连接端子,上述多个连接端子中的至少一个连接端子被配置于邻接的上述第一部件之间。
根据该结构,由于能够将更多的部件搭载于高频模块,所以能够实现高频模块的高功能化。
另外,也可以还具备:第二部件,安装于上述布线基板的另一个主面;以及第二密封树脂层,具有抵接于上述布线基板的上述另一个主面的抵接面、与该抵接面对置的对置面、以及连接上述抵接面和上述对置面的边缘彼此的侧面,并密封上述第二部件。
根据该结构,由于在布线基板的两面安装部件,所以能够进一步实现高频模块的高功能化。
另外,也可以还具备屏蔽膜,上述屏蔽膜至少覆盖上述第一密封树脂层的上述侧面、以及上述第二密封树脂层的上述侧面和上述对置面。根据该结构,能够抑制由来自外部的电磁波引起的噪声,并防止高频模块的性能降低。
另外,上述连接端子也可以是凸块。
根据本发明,通过使第一部件的背面的表面粗糙度比连接端子的另一个端部的表面粗糙度小,并使第一密封树脂层的对置面的表面粗糙度比第一部件的背面的表面粗糙度小,能够确保散热性,并且抑制镀层的异常析出。
附图说明
图1是本发明的第一实施方式的高频模块的剖视图。
图2是图1的高频模块的俯视图。
图3是表示表面粗糙度以及第一部件厚度与有无裂缝产生的关系的表。
图4是表示图1的高频模块的制造工序的图。
图5是表示图1的高频模块的制造工序的图。
图6是本发明的第二实施方式的高频模块的剖视图。
图7是图6的高频模块的俯视图。
图8是本发明的第三实施方式的高频模块的剖视图。
图9是以往的高频模块的剖视图。
具体实施方式
<第一实施方式>
参照图1以及图2,对本发明的第一实施方式的高频模块1a进行说明。应予说明,图1是高频模块1a的剖视图,图2是表示高频模块1a的第一密封树脂层5的下表面5a的俯视图。
如图1以及图2所示,本实施方式的高频模块1a具备布线基板2、安装于该布线基板2的下表面2a的第一部件3a以及多个连接端子4、密封第一部件3a以及连接端子4的第一密封树脂层5、安装于布线基板2的上表面2b的多个第二部件3b、密封第二部件3b的第二密封树脂层6、以及覆盖第一密封树脂层5的侧面5c、第二密封树脂层6的侧面6c和上表面6a以及布线基板2的侧面2c的屏蔽膜7,例如,搭载于使用高频信号的电子设备的母基板等。
布线基板2例如层叠由低温共烧陶瓷、高温共烧陶瓷、玻璃环氧树脂等形成的多个绝缘层而成。在布线基板2的上表面2b(相当于本发明的“另一个主面”)以及下表面2a(相当于本发明的“一个主面”)形成各部件3a、3b或者连接端子4的安装用的安装电极8。另外,在下表面2a,安装外部连接用的多个连接端子4。另外,在邻接的多个绝缘层间分别形成各种内部布线电极(省略图示)、接地电极9。进一步,在布线基板2的内部,形成用于连接内部布线电极彼此的多个导通孔导体(省略图示)。此外,安装电极8以及内部布线电极均由Cu、Ag、Al等作为布线电极通常采用的金属形成。另外,各导通孔导体由Ag、Cu等金属形成。此外,也可以在各安装电极,分别实施Ni/Au镀层。
第一部件3a由IC、PA(功率放大器)等半导体元件构成,通过焊接等一般的表面安装技术安装于布线基板2。另外,为了高频模块1a的薄型化,第一部件3a的下表面30a被研磨,以使垂直于布线基板2的下表面2a的方向的厚度成为5μm以上100μm以下。此外,第一部件3a的研磨在安装于布线基板2的下表面2a之后来进行。
第二部件3b由片状电感器、片状电容器、片状电阻等片状部件构成。另外,也可以是IC等半导体元件。
连接端子4用于与外部基板的输入输出,如图2所示,沿着高频模块1a的外周来配置。在本实施方式中,沿着高频模块1a的外周排列成1列,但也可以根据情况排列成多列。另外,连接端子4例如也可以将金属销搭载于安装电极8并进行焊接,也可以是预先通过镀覆形成在安装电极8上的柱电极。或者,也可以是在第一密封树脂上开孔以使安装电极露出,之后填充导电材料的导通孔。或者,如后面详细叙述的第三实施方式那样,连接端子4也可以是焊料凸块、Au凸块。此外,在连接端子4的下表面4a,通过镀覆形成有金属膜。
第一密封树脂层5以及第二密封树脂层6由含二氧化硅填料的环氧树脂等作为密封树脂一般采用的树脂来形成,分别密封第一部件3a以及第二部件3b。另外,第一密封树脂层5具有抵接于布线基板2的下表面2a的上表面5b(相当于本发明的“密封树脂层的抵接面”)、与该上表面5b对置的下表面5a(相当于本发明的“密封树脂层的对置面”)、以及侧面5c。同样地,第二密封树脂层6具有抵接于布线基板2的上表面2b的下表面6b、与该下表面6b对置的上表面6a、以及侧面6c。另外,为了提高热传导率,也可以使用氧化铝填料等热传导率较高的填料。
屏蔽膜7覆盖第一密封树脂层5的侧面5c、第二密封树脂层6的侧面6c和上表面6a、以及布线基板2的侧面2c。另外,屏蔽膜7与在布线基板2的侧面2c露出的接地电极9连接。
屏蔽膜7能够由多层结构形成,该多层结构具有层叠于第一密封树脂层5的侧面5c、布线基板2的侧面2c、第二密封树脂层6的侧面6c以及上表面6a的紧贴膜、层叠于紧贴膜的导电膜、以及层叠于导电膜的防锈膜。在这里,紧贴膜是为了提高导电膜与两个密封树脂层5、6的紧贴强度而设置的,例如,能够由Ti、Cr、SUS等形成钝化的材料形成。另外,导电膜是负责屏蔽膜7的实际的屏蔽功能的层,例如,能够由Cu、Ag、Al中的任意一个金属来形成。防锈膜是为了防止导电膜被腐蚀或刮擦而设置的,例如,能够由SUS形成。
在这里,对第一部件3a的下表面30a、连接端子4的下表面4a、第一密封树脂层5的下表面5a的表面粗糙度的大小关系进行说明。在连接端子4的下表面4a,通过镀覆形成金属膜。此时,若第一部件3a的下表面30a以及第一密封树脂层5的下表面5a的表面粗糙度较大,则有由于研磨屑、镀层催化剂残留于第一部件3a的下表面30a或者第一密封树脂层5的下表面5a,所以将其作为核而镀层异常析出的情况。特别是,若在第一密封树脂层5的下表面5a镀层异常析出,则产生连接端子4间的短路不良。因此,使第一密封树脂层5的下表面5a的表面粗糙度比连接端子4的下表面4a以及第一部件3a的下表面30a小。另外,由于第一部件3a的距连接端子4的距离比第一密封树脂层5更远离,所以镀层异常析出的影响比第一密封树脂层5小,但若第一部件3a的下表面30a的表面粗糙度较大,则有成为裂缝的原因,而第一部件3a破损的可能性。因此,第一部件3a的下表面30a的表面粗糙度为第一密封树脂层5的下表面5a的表面粗糙度以上,且比连接端子4的下表面4a的表面粗糙度小。
即,由于连接端子4的下表面4a需要通过镀覆形成金属膜,所以与第一部件3a的下表面30a以及第一密封树脂层5的下表面5a相比,表面粗糙度较大。另一方面,由于第一密封树脂层5的下表面5a需要抑制镀层异常析出,所以与第一部件3a的下表面30a以及连接端子4的下表面4a相比,表面粗糙度减小。其结果,考虑到镀层异常析出的影响以及裂缝产生的可能性,第一部件3a的下表面30a中的表面粗糙度比连接端子4的下表面4a小,但也可以是第一密封树脂层5的下表面5a以上。
另外,由于希望模块整体的厚度较薄,所以若考虑制造上的极限,则优选第一部件3a的厚度为5μm以上100μm以下。此时,例如,如专利文献1所记载的那样,使半导体部件104的表面104a的表面粗糙度成为0.1μm~15μm容易附着用于散热的金属膜,也抑制半导体部件104的破损。然而,即使成为这样的表面粗糙度,由于第一部件3a的下表面30a从第一密封树脂层5露出,所以存在在第一部件3a的下表面30a产生裂缝的情况。若产生裂缝,则存在容易到达第一部件3a的电路面(上表面30b),而第一部件3a受到损伤的情况。在图3的(a)的表中,示出第一实施方式中的第一部件3a的下表面30a的表面粗糙度Ra与有无裂缝产生的关系。样本数为500pcs。如图3的(a)的表所示,在表面粗糙度0.1μm以下不产生裂缝。
另外,若在第一部件3a的下表面30a残留金属研磨屑,则存在研磨屑材料在第一部件3a中扩散并到达电路面,而产生第一部件3a的动作不良的可能。特别是,在研磨屑为Cu、第一部件3a的半导体为Si的情况下,由于Cu容易在Si中扩散所以影响增大。综上所述,若考虑制造上的成本等,则优选使第一部件3a的下表面30a的表面粗糙度成为0.005μm以上0.1μm以下。通过像这样调整表面粗糙度,能够减少成为裂缝基点的凹部,来防止金属研磨屑的残留。
参考时,在图3的(b)的表中,示有未产生裂缝的表面粗糙度下的第一部件3a的厚度与有无裂缝产生的关系。在这里,所谓的“第一部件3a的厚度”是指从第一部件3a的下表面30a到第一部件3a的电路面(上表面30b)的大小。由此可知,若是所希望的表面粗糙度以下,则部件的厚度为100μm,不产生裂缝。此外,样本数为500pcs。
(高频模块的制造方法)
接下来,参照图4以及图5,对高频模块1a的制造方法进行说明。在本第一实施方式中,通过在形成多个高频模块1a的集合体之后进行单片化,来制造高频模块1a。此外,根据需要,也可以更换各工序的顺序,也可以追加新的工序。
首先,如图4的(a)所示,使用公知的表面安装技术将第一部件3a安装于布线基板2的下表面2a,进一步形成连接端子4。连接端子4也可以将金属销搭载于安装电极8并焊接,也可以预先通过镀覆形成在安装电极8上。另外,也可以是凸块。之后,如图4的(b),形成第一密封树脂层5,以覆盖第一部件3a以及连接端子4。第一密封树脂层5例如能够使用传递模塑方式、压缩模塑方式、树脂分配法等公知的技术来形成。此外,第一密封树脂层5能够使用一般的含二氧化硅填料的环氧树脂。另外,为了使第一密封树脂层5具有较高的热传导性,也能够使用含氧化铝填料等热传导率较高的填料的环氧树脂。
在形成第一密封树脂层5之后,如图4的(c)所示,通过研磨等,使第一部件3a的下表面30a、连接端子4的下表面4a露出。此时,调整研磨的条件,以使表面粗糙度的大小关系为(第一密封树脂层5的下表面5a)≤(第一部件3a的下表面30a)<(连接端子4的下表面4a),进一步,第一部件3a的下表面30a的表面粗糙度为0.005μm以上0.1μm以下。研磨后,在连接端子4的下表面4a通过镀覆等形成金属膜。也可以在镀层处理之前进行蚀刻等表面处理。
之后,如图4的(d)所示,使用公知的安装技术在布线基板2的上表面2b安装第二部件3b。接下来,如图5的(a)所示,形成第二密封树脂层6,以覆盖第二部件3b。第二密封树脂层6与第一密封树脂层5相同,能够使用传递模塑方式、压缩模塑方式、树脂分配法等公知的技术来形成。另外,第二密封树脂层6能够使用一般的含二氧化硅填料的环氧树脂。另外,为了使第一密封树脂层5具有较高的热传导性,也能够使用含氧化铝填料等热传导率较高的填料的环氧树脂。
接下来,如图5的(b)所示,通过切割、激光加工等切割作为集合基板来制造的高频模块1a使其单片化。进一步,如图5的(c)所示,在布线基板2的侧面2c、第一密封树脂层5的侧面5c、第二密封树脂层6的侧面6c以及上表面6a形成屏蔽膜7。在形成屏蔽膜7时,能够使用溅射、真空蒸镀、镀层、导电性树脂涂覆等公知的方法。另外,也可以在形成屏蔽膜7之前,进一步追加等离子体清洗、干式蚀刻、离子研磨等干法工序的残留成分的除去工序。
因此,根据上述的实施方式,通过使第一密封树脂层5的下表面5a的表面粗糙度比连接端子4的下表面4a的表面粗糙度小,能够防止研磨屑、镀覆催化剂残留于第一密封树脂层5的下表面5a,并抑制镀层异常析出的产生。另外,通过使第一部件3a的下表面30a的表面粗糙度成为第一密封树脂层5的下表面5a的表面粗糙度以上,并且小于连接端子4的下表面4a的表面粗糙度(0.005μm以上0.1μm以下),能够防止在第一部件3a的下表面30a产生裂缝,并抑制动作不良的产生。进一步,通过使第一部件3a的厚度成为100μm以下,能够实现高频模块1a的薄型化。
<第二实施方式>
参照图6以及图7,对本发明的第二实施方式的高频模块1b进行说明。此外,图6是高频模块1b的剖视图,图7是表示高频模块1b的第一密封树脂层5的下表面5a的俯视图。
本实施方式的高频模块1b与参照图1以及图2说明的第一实施方式的高频模块1a不同之处在于以下的点:如图6以及图7所示,在布线基板2的下表面2a安装有多个第一部件3a,并与邻接的第一部件3a之间配置有连接端子4。由于其他的结构与第一实施方式的高频模块1a相同,所以通过标注相同符号来省略说明。
在本实施方式中,在布线基板2的下表面2a安装有2个第一部件3a。另外,连接端子4不仅是沿着高频模块1b的外周的部分,也配置于被2个第一部件3a夹持的部分。此外,安装于布线基板2的下表面2a的第一部件3a也可以为3个以上,另外,连接端子4也可以排列成多列。
根据该结构,由于除了与第一实施方式的高频模块1a相同的效果以外,也能够在高频模块1b上搭载更多的第一部件3a,所以能够实现高频模块1b的高功能化。
<第三实施方式>
图8的(a)、(b)是本发明的第三实施方式中的高频模块的剖视图以及俯视图。在第三实施方式中,与参照图1、图2说明的第一实施方式不同之处在于由焊料凸块、Au凸块等凸块形成连接端子4,并能够获得与第一实施方式等同的效果。
此外,本发明并不限定于上述的各实施方式,只要不脱离其主旨,除了上述以外能够进行各种变更。例如,也可以对上述的各实施方式、变形例的结构进行组合。
例如,也可以在布线基板2的下表面2a安装第二部件3b、其他部件。此时,优选安装于布线基板2的下表面2a的第二部件3b或者其他部件的高度比研磨后的第一密封树脂层5的高度低。
另外,也可以不形成屏蔽膜7。在该情况下,也可以是接地电极9不在布线基板2的侧面2c露出的结构。
本发明能够应用于具备半导体部件的各种高频模块。
附图标记说明
1a、1b…高频模块2…布线基板;3a…第一部件;3b…第二部件;5…第一密封树脂层;6…第二密封树脂层。
Claims (6)
1.一种高频模块,其特征在于,具备:
布线基板;
第一部件,安装于上述布线基板的一个主面;
第一密封树脂层,具有抵接于上述布线基板的上述一个主面的抵接面、与该抵接面对置的对置面、以及连接上述抵接面和上述对置面的边缘彼此的侧面,并密封上述第一部件;以及
连接端子,埋设于上述第一密封树脂层,
上述第一部件的与安装面相反侧的背面从上述第一密封树脂层的上述对置面露出,
上述连接端子的一个端部与上述布线基板的上述一个主面连接,上述连接端子的另一个端部从上述第一密封树脂层的上述对置面露出,
上述第一部件的上述背面的表面粗糙度比上述连接端子的另一个端部的表面粗糙度小,上述第一密封树脂层的上述对置面的表面粗糙度比上述第一部件的上述背面的表面粗糙度小。
2.根据权利要求1所述的高频模块,其特征在于,
上述第一部件的垂直于上述布线基板的上述一个主面的方向上的厚度为5μm以上100μm以下,上述第一部件的上述背面的表面粗糙度为0.005μm以上0.1μm以下。
3.根据权利要求1或2所述的高频模块,其特征在于,
在上述布线基板的上述一个主面安装有多个上述第一部件以及多个上述连接端子,
多个连接端子中的至少一个连接端子被配置于邻接的上述第一部件之间。
4.根据权利要求1~3中任一项所述的高频模块,其特征在于,还具备:
第二部件,安装于上述布线基板的另一个主面;以及
第二密封树脂层,具有抵接于上述布线基板的上述另一个主面的抵接面、与该抵接面对置的对置面、以及连接上述抵接面和上述对置面的边缘彼此的侧面,并密封上述第二部件。
5.根据权利要求4所述的高频模块,其特征在于,
还具备屏蔽膜,该屏蔽膜至少覆盖上述第一密封树脂层的上述侧面和上述第二密封树脂层的上述侧面以及上述对置面。
6.根据权利要求1~5中任一项所述的高频模块,其特征在于,
上述连接端子为凸块。
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