WO2021215107A1 - 高周波モジュール及び通信装置 - Google Patents
高周波モジュール及び通信装置 Download PDFInfo
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- WO2021215107A1 WO2021215107A1 PCT/JP2021/006888 JP2021006888W WO2021215107A1 WO 2021215107 A1 WO2021215107 A1 WO 2021215107A1 JP 2021006888 W JP2021006888 W JP 2021006888W WO 2021215107 A1 WO2021215107 A1 WO 2021215107A1
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- main surface
- frequency module
- high frequency
- electronic component
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
Definitions
- the present invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module including a mounting board and a communication device including the high-frequency module.
- a mounting board having a first main surface and a second main surface facing each other, a transmission power amplifier mounted on the first main surface of the mounting board, and a first main surface of the mounting board are mounted.
- a high-frequency module including a transmission filter and a reception filter, a resin member (resin layer) covering the transmission power amplifier, the transmission filter, and the reception filter, and a shield electrode layer (shield layer) is disclosed.
- the shield electrode layer is formed so as to cover the top surface and the side surface of the resin member.
- Patent Document 1 discloses a communication device including a high frequency module.
- An object of the present invention is to provide a high frequency module and a communication device capable of improving heat dissipation.
- the high frequency module includes a mounting substrate, a first electronic component and a second electronic component, a resin layer, and a shield layer.
- the mounting board has a first main surface and a second main surface facing each other.
- the first electronic component and the second electronic component are arranged on the first main surface of the mounting substrate.
- the resin layer is arranged on the first main surface of the mounting substrate, and covers the outer peripheral surface of the first electronic component and the outer peripheral surface of the second electronic component.
- the shield layer covers the resin layer, the first electronic component, and the second electronic component.
- the first electronic component includes a first substrate having a first main surface and a second main surface facing each other, and a first circuit portion formed on the first main surface side of the first substrate.
- the second electronic component includes a second substrate having a first main surface and a second main surface facing each other, and a second circuit portion formed on the first main surface side of the second substrate.
- the material of the first substrate and the material of the second substrate are the same.
- the shield layer is in contact with the second main surface of the first substrate and the second main surface of the second substrate.
- the communication device includes the high frequency module and a signal processing circuit.
- the signal processing circuit is connected to the high frequency module and processes a high frequency signal.
- the high-frequency module and communication device can improve heat dissipation.
- FIG. 1 is a cross-sectional view of the high frequency module according to the first embodiment.
- FIG. 2 is an enlarged cross-sectional view of a part of the high frequency module of the above.
- FIG. 3 is a plan view of the same high frequency module.
- FIG. 4 is a circuit configuration diagram of a communication device including the same high frequency module.
- FIG. 5 is an enlarged cross-sectional view of a part of the high frequency module according to the first modification of the first embodiment.
- FIG. 6 is an enlarged cross-sectional view of a part of the high frequency module according to the second modification of the first embodiment.
- FIG. 7 is an enlarged cross-sectional view of a part of the high frequency module according to the third modification of the first embodiment.
- FIG. 8 is an enlarged cross-sectional view of a part of the high frequency module according to the fourth modification of the first embodiment.
- FIG. 9 is a cross-sectional view of the high frequency module according to the second embodiment.
- FIG. 10 is an enlarged cross-sectional view of a part of the high frequency module of the same.
- FIG. 11 is an enlarged cross-sectional view of a part of the high frequency module according to the modified example of the second embodiment.
- FIG. 12 is a cross-sectional view of the high frequency module according to the third embodiment.
- FIG. 13 is a cross-sectional view of the high frequency module according to the fourth embodiment.
- FIG. 14 is a cross-sectional view of the high frequency module according to the fifth embodiment.
- FIG. 15 is a cross-sectional view of the high frequency module according to the sixth embodiment.
- FIG. 16 is an enlarged cross-sectional view of a part of the high frequency module of the same.
- FIG. 17 is a cross-sectional view of the high frequency module according to the first modification of the sixth embodiment.
- FIG. 18 is an enlarged cross-sectional view of a part of the high frequency module of the same.
- FIG. 19 is a partially enlarged cross-sectional view of the high frequency module according to the second modification of the sixth embodiment.
- FIGS. Not always.
- the high-frequency module 100 includes, for example, a mounting substrate 9, a first electronic component 1 and a second electronic component 2, a resin layer 5, and a shield layer 6, as shown in FIGS. Be prepared.
- the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
- the first electronic component 1 and the second electronic component 2 are arranged on the first main surface 91 of the mounting board 9.
- the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9, and has an outer peripheral surface 13 (see FIG. 2) of the first electronic component 1 and an outer peripheral surface 23 (see FIG. 2) of the second electronic component 2. Covering.
- the shield layer 6 covers the resin layer 5, the first electronic component 1, and the second electronic component 2.
- the first electronic component 1 includes a first substrate 10 having a first main surface 11 and a second main surface 12 facing each other, and a first circuit unit 14 formed on the first main surface 11 side of the first substrate 10.
- the second electronic component 2 includes a second substrate 20 having a first main surface 21 and a second main surface 22 facing each other, and a second circuit unit 24 formed on the first main surface 21 side of the second substrate 20.
- the material of the first substrate 10 and the material of the second substrate 20 are the same.
- the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20.
- the high frequency module 100 according to the first embodiment can improve heat dissipation.
- the high-frequency module 100 is used in, for example, the communication device 300.
- the communication device 300 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch) or the like.
- the high frequency module 100 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like.
- the 4G standard is, for example, a 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard.
- the 5G standard is, for example, 5G NR (New Radio).
- the high frequency module 100 is a module capable of supporting carrier aggregation and dual connectivity, for example.
- the high frequency module 100 is configured so that, for example, the transmission signal (high frequency signal) input from the signal processing circuit 301 can be amplified and output to the antenna 310. Further, the high frequency module 100 is configured so that the received signal (high frequency signal) input from the antenna 310 can be amplified and output to the signal processing circuit 301.
- the signal processing circuit 301 is not a component of the high frequency module 100, but a component of the communication device 300 including the high frequency module 100.
- the high frequency module 100 is controlled by, for example, the signal processing circuit 301 included in the communication device 300.
- the communication device 300 includes a high frequency module 100 and a signal processing circuit 301.
- the communication device 300 further includes an antenna 310.
- the communication device 300 further includes a circuit board on which the high frequency module 100 is mounted.
- the circuit board is, for example, a printed wiring board.
- the circuit board has a ground electrode to which a ground potential is applied.
- the signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303.
- the RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal.
- the RF signal processing circuit 302 performs signal processing such as up-conversion on the high-frequency signal (transmission signal) output from the baseband signal processing circuit 303, and outputs the high-frequency signal after the signal processing. Further, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high frequency signal (received signal) output from the high frequency module 100, and uses the processed high frequency signal as the base band signal processing circuit. Output to 303.
- the baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit).
- the baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal.
- the baseband signal is, for example, an audio signal, an image signal, or the like input from the outside.
- the baseband signal processing circuit 303 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) in which a carrier signal having a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal.
- IQ signal modulated signal
- the received signal processed by the baseband signal processing circuit 303 is used, for example, for displaying an image as an image signal or for a telephone call as an audio signal.
- the high frequency module 100 transmits a high frequency signal (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.
- the high frequency module 100 includes a power amplifier 111 and a low noise amplifier 121. Further, the high frequency module 100 includes a plurality of (for example, two) transmission filters 112A and 112B, and a plurality of (for example, two) reception filters 122A and 122B. Further, the high frequency module 100 includes an output matching circuit 113 and an input matching circuit 123. Further, the high frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. Further, the high frequency module 100 further includes a controller 115. In the high frequency module 100 according to the first embodiment, the transmission filter 112B constitutes the first electronic component 1 (see FIG. 2) described above. Further, in the high frequency module 100 according to the first embodiment, the reception filter 122B constitutes the above-mentioned second electronic component 2.
- the high frequency module 100 includes a plurality of external connection terminals 80.
- the plurality of external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (see FIG. 1).
- the plurality of ground terminals 85 are terminals that are electrically connected to the ground electrodes of the above-mentioned circuit board included in the communication device 300 and are given a ground potential.
- the power amplifier 111 has an input terminal and an output terminal.
- the power amplifier 111 amplifies the transmission signal of the first frequency band input to the input terminal and outputs it from the output terminal.
- the first frequency band includes, for example, a first communication band and a second communication band.
- the first communication band corresponds to the transmission signal passing through the transmission filter 112A, and is, for example, Band 11 of the 3GPP LTE standard.
- the second communication band corresponds to the transmission signal passing through the transmission filter 112B, and is, for example, Band 22 of the 3GPP LTE standard.
- the input terminal of the power amplifier 111 is connected to the signal input terminal 82.
- the input terminal of the power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82.
- the signal input terminal 82 is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100.
- the output terminal of the power amplifier 111 is connected to the common terminal 150 of the second switch 105 via the output matching circuit 113.
- the low noise amplifier 121 has an input terminal and an output terminal.
- the low noise amplifier 121 amplifies the reception signal of the second frequency band input to the input terminal and outputs it from the output terminal.
- the second frequency band is, for example, the same as the first frequency band, and includes a first communication band and a second communication band.
- the input terminal of the low noise amplifier 121 is connected to the common terminal 160 of the third switch 106 via the input matching circuit 123.
- the output terminal of the low noise amplifier 121 is connected to the signal output terminal 83.
- the output terminal of the low noise amplifier 121 is connected to the signal processing circuit 301 via, for example, the signal output terminal 83.
- the signal output terminal 83 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifier 121 to an external circuit (for example, a signal processing circuit 301).
- the transmission filter 112A is, for example, a filter whose pass band is the transmission band of the first communication band.
- the transmission filter 112B is, for example, a filter whose pass band is the transmission band of the second communication band.
- the reception filter 122A is, for example, a filter having a reception band of the first communication band as a pass band.
- the reception filter 122B is, for example, a filter having a reception band of the second communication band as a pass band.
- the duplexer 132A is composed of the transmission filter 112A and the reception filter 122A.
- the duplexer 132B is composed of the transmission filter 112B and the reception filter 122B.
- the first switch 104 has a common terminal 140 and a plurality of (for example, two) selection terminals 141 and 142.
- the common terminal 140 is connected to the antenna terminal 81.
- An antenna 310 is connected to the antenna terminal 81.
- the selection terminal 141 is connected to a connection point between the output terminal of the transmission filter 112A and the input terminal of the reception filter 122A.
- the selection terminal 142 is connected to a connection point between the output terminal of the transmission filter 112B and the input terminal of the reception filter 122B.
- the first switch 104 is, for example, a switch capable of connecting at least one or more of a plurality of selection terminals 141 and 142 to the common terminal 140.
- the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.
- the first switch 104 is controlled by, for example, the signal processing circuit 301.
- the first switch 104 switches the connection state between the common terminal 140 and the plurality of selection terminals 141 and 142 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301.
- the first switch 104 is, for example, a switch IC (Integrated Circuit).
- the second switch 105 has a common terminal 150 and a plurality of (for example, two) selection terminals 151 and 152.
- the common terminal 150 is connected to the output terminal of the power amplifier 111 via the output matching circuit 113.
- the selection terminal 151 is connected to the input terminal of the transmission filter 112A.
- the selection terminal 152 is connected to the input terminal of the transmission filter 112B.
- the second switch 105 is, for example, a switch capable of connecting at least one or more of a plurality of selection terminals 151 and 152 to the common terminal 150.
- the second switch 105 is, for example, a switch capable of one-to-one and one-to-many connections.
- the third switch 106 has a common terminal 160 and a plurality of (for example, two) selection terminals 161, 162.
- the common terminal 160 is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 123.
- the selection terminal 161 is connected to the output terminal of the reception filter 122A.
- the selection terminal 162 is connected to the output terminal of the reception filter 122B.
- the third switch 106 is, for example, a switch capable of connecting at least one or more of a plurality of selection terminals 161, 162 to the common terminal 160.
- the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections.
- the third switch 106 is controlled by, for example, the signal processing circuit 301.
- the third switch 106 switches the connection state between the common terminal 160 and the plurality of selection terminals 161, 162 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301.
- the third switch 106 is, for example, a switch IC.
- the output matching circuit 113 is provided in the signal path between the output terminal of the power amplifier 111 and the common terminal 150 of the second switch 105.
- the output matching circuit 113 is a circuit for impedance matching between the power amplifier 111 and the transmission filters 112A and 112B.
- the output matching circuit 113 is composed of, for example, one inductor, but is not limited to this, and may include, for example, a plurality of inductors and a plurality of capacitors.
- the input matching circuit 123 is provided in the signal path between the input terminal of the low noise amplifier 121 and the common terminal 160 of the third switch 106.
- the input matching circuit 123 is a circuit for impedance matching between the low noise amplifier 121 and the receiving filters 122A and 122B.
- the input matching circuit 123 is composed of, for example, one inductor, but is not limited to this, and may include, for example, a plurality of inductors and a plurality of capacitors.
- the controller 115 is connected to the control terminal 84.
- the controller 115 is connected to the signal processing circuit 301 via the control terminal 84.
- the control terminal 84 is a terminal for inputting a control signal from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100.
- the controller 115 is connected to the power amplifier 111, and controls the power amplifier 111 based on the control signal from the signal processing circuit 301.
- the high frequency module 100 includes a mounting board 9, a plurality of electronic components 8, and a plurality of external connection terminals 80.
- the plurality of electronic components 8 include the above-mentioned power amplifier 111, low noise amplifier 121, two transmission filters 112A and 112B, two reception filters 122A and 122B, an inductor of the output matching circuit 113 and an inductor of the input matching circuit 123. That is, the plurality of electronic components 8 include the transmission filter 112B, which is the first electronic component 1, and the reception filter 122B, which is the second electronic component 2.
- the first electronic component 1 is a transmission filter 112B of the duplexer 132B having the narrowest interval between the transmission band and the reception band among the plurality of duplexers 132A and 132B.
- the second electronic component 2 is a reception filter 122B of the duplexer 132B having the narrowest interval between the transmission band and the reception band among the plurality of duplexers 132A and 132B.
- the plurality of electronic components 8 further include the above-mentioned first switch 104, second switch 105, and third switch 106.
- the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the mounting board 9.
- the mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers.
- the plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 9.
- the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
- Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 9.
- the material of each conductive layer is, for example, copper.
- the plurality of conductive layers include a ground layer.
- the mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate.
- the mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.
- the mounting board 9 is not limited to the LTCC board, and may be, for example, a wiring structure.
- the wiring structure is, for example, a multi-layer structure.
- the multilayer structure includes at least one insulating layer and at least one conductive layer.
- the insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer.
- the conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
- the conductive layer may include one or more rewiring sections.
- the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 91 of the mounting board 9, and the second surface is the second main surface 92 of the mounting board 9.
- the wiring structure may be, for example, an interposer.
- the interposer may be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.
- the first main surface 91 and the second main surface 92 of the mounting board 9 are separated in the thickness direction D1 of the mounting board 9 and intersect with the thickness direction D1 of the mounting board 9.
- the first main surface 91 of the mounting board 9 is orthogonal to, for example, the thickness direction D1 of the mounting board 9, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1.
- the second main surface 92 of the mounting board 9 is orthogonal to, for example, the thickness direction D1 of the mounting board 9, but includes, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. You may. Further, the first main surface 91 and the second main surface 92 of the mounting substrate 9 may be formed with fine irregularities, concave portions or convex portions.
- the plurality of electronic components 8 of the high frequency module 100 are mounted on the first main surface 91 of the mounting board 9.
- “mounted” means that the electronic component 8 is arranged on the first main surface 91 of the mounting board 9 (mechanically connected) and that the electronic component 8 is mounted on the mounting board 9. Includes being electrically connected to (appropriate conductors). Therefore, in the high frequency module 100, the plurality of electronic components 8 are arranged on the first main surface 91 of the mounting board 9.
- Each of the plurality of electronic components 8 has a first main surface 801 and a second main surface 802 facing each other, and the first main surface 801 of the electronic component 8 is mounted in the thickness direction D1 of the mounting substrate 9.
- each of the plurality of electronic components 8 has an outer peripheral surface 803 connecting the first main surface 801 and the second main surface 802.
- the outer peripheral surface 803 of the electronic component 8 includes four side surfaces of the electronic component 8 connecting the first main surface 801 and the second main surface 802, and does not include the first main surface 801 and the second main surface 802. .
- the high frequency module 100 is not limited to the plurality of electronic components 8 mounted on the mounting board 9, and may include circuit elements provided in the mounting board 9.
- the power amplifier 111 includes a substrate having a first main surface and a second main surface facing each other, a circuit unit (IC unit) having a transistor formed on the first main surface side of the substrate, and a circuit unit (IC unit). It is an IC chip containing.
- the substrate is, for example, a gallium arsenide substrate.
- the circuit unit has a function of amplifying a transmission signal input to the input terminal of the power amplifier 111.
- the transistor is, for example, an HBT (Heterojunction Bipolar Transistor).
- the power amplifier 111 may include, for example, a capacitor for cutting DC.
- the IC chip including the power amplifier 111 has a first main surface 91 of the mounting board 9 so that the first main surface of the first main surface and the second main surface of the board is on the first main surface 91 side of the mounting board 9. Flip chip is mounted on.
- the outer peripheral shape of the IC chip including the power amplifier 111 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting board 9.
- the substrate in the IC chip including the power amplifier 111 is not limited to the gallium arsenide substrate, and may be a silicon substrate, a silicon germanium substrate, a gallium nitride substrate, or the like.
- the transistor is not limited to a bipolar transistor such as an HBT, and may be, for example, a FET (Field Effect Transistor).
- the FET is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).
- the low noise amplifier 121 is an IC chip including, for example, a substrate having a first main surface and a second main surface facing each other, and a circuit unit (IC unit) formed on the first main surface side of the substrate. ..
- the substrate is, for example, a silicon substrate.
- the circuit unit has a function of amplifying the received signal input to the input terminal of the low noise amplifier 121.
- the low noise amplifier 121 is flip-chip mounted on the first main surface 91 of the mounting board 9 so that the first main surface of the first main surface and the second main surface of the board is on the first main surface 91 side of the mounting board 9. Has been done.
- the outer peripheral shape of the low noise amplifier 121 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting board 9.
- Each of the two transmit filters 112A, 112B and the two receive filters 122A, 122B is, for example, a ladder type filter, with a plurality of (for example, four) series arm resonators and a plurality (for example, three) in parallel. It has an arm resonator.
- Each of the two transmit filters 112A, 112B and the two receive filters 122A, 122B is, for example, an elastic wave filter.
- each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
- the surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave.
- each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.
- the surface acoustic wave filter includes, for example, a substrate having a first main surface and a second main surface facing each other, and a circuit portion formed on the first main surface side of the substrate.
- the substrate is a piezoelectric substrate.
- the piezoelectric substrate is, for example, a lithium niobate substrate.
- the circuit unit has a plurality of IDT (Interdigital Transducer) electrodes having a one-to-one correspondence with a plurality of series arm resonators, and a plurality of IDT electrodes having a one-to-one correspondence with a plurality of parallel arm resonators.
- IDT Interdigital Transducer
- Each of the two transmission filters 112A and 112B and the two reception filters 122A and 122B are, for example, bare-chip elastic wave filters.
- the outer peripheral shapes of the two transmission filters 112A and 112B and the two reception filters 122A and 122B are quadrangular.
- Each of the two transmission filters 112A and 112B and the two reception filters 122A and 122B is mounted on a mounting board so that the first main surface of the first main surface and the second main surface of the board is on the mounting board 9 side.
- a flip chip is mounted on the first main surface 91 of 9.
- Each of the first switch 104, the second switch 105, and the third switch 106 is a switch IC. More specifically, each of the first switch 104, the second switch 105, and the third switch 106 has, for example, a substrate having a first main surface and a second main surface facing each other, and a first main surface side of the substrate. It is an IC chip including a circuit part (IC part) having an FET (Field Effect Transistor) formed in the above.
- the substrate is, for example, a silicon substrate.
- the circuit unit is a functional unit having a function of switching the connection state between the common terminal and the plurality of selection terminals.
- the first main surface of the first main surface and the second main surface of the board is on the first main surface 91 side of the mounting board 9.
- a flip chip is mounted on the first main surface 91 of the mounting board 9.
- the outer peripheral shape of the IC chip constituting each of the first switch 104, the second switch 105, and the third switch 106 is quadrangular.
- the inductor in the output matching circuit 113 is, for example, a chip inductor.
- the inductor in the output matching circuit 113 is mounted on, for example, the first main surface 91 of the mounting board 9, but is not limited to this.
- the outer peripheral shape of the inductor is a quadrangular shape.
- the inductor in the input matching circuit 123 is, for example, a chip inductor.
- the inductor in the input matching circuit 123 is mounted on, for example, the first main surface 91 of the mounting board 9, but is not limited to this.
- the outer peripheral shape of the inductor is a quadrangular shape.
- the plurality of external connection terminals 80 are arranged on the second main surface 92 of the mounting board 9.
- the material of the plurality of external connection terminals 80 is, for example, a metal (for example, copper, copper alloy, etc.).
- the plurality of external connection terminals 80 include a plurality of ground terminals 85 in addition to the above-mentioned antenna terminal 81, signal input terminal 82, signal output terminal 83, and control terminal 84.
- the plurality of ground terminals 85 are electrically connected to the ground layer of the mounting board 9 as described above.
- the ground layer is the circuit ground of the high frequency module 100, and the plurality of electronic components 8 of the high frequency module 100 include electronic components 8 that are electrically connected to the ground layer.
- the resin layer 5 covers at least a part of each of the plurality of electronic components 8 arranged on the first main surface 91 of the mounting board 9 on the first main surface 91 side of the mounting board 9.
- the resin layer 5 contains a resin (for example, an epoxy resin).
- the resin layer 5 may contain a filler in addition to the resin.
- the resin layer 5 covers the outer peripheral surface 803 of each of the plurality of electronic components 8, and also covers the second main surface 802 of some of the electronic components 8 among the plurality of electronic components 8.
- the material of the shield layer 6 includes, for example, one or more kinds of metals.
- the material of the shield layer 6 contains, for example, silver.
- the shield layer 6 covers the main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9.
- the shield layer 6 is in contact with at least a part of the outer peripheral surface of the ground layer included in the mounting substrate 9. Thereby, the potential of the shield layer 6 can be made the same as the potential of the ground layer.
- the substrate of the surface acoustic wave filter constituting the transmission filter 112A, the first main surface and the second main surface of the substrate, and the circuit portion are the first substrate of the first electronic component 1. 10.
- the substrate of the surface acoustic wave filter constituting the reception filter 122A, the first main surface and the second main surface of this substrate, and the circuit portion are the second substrate 20 of the second electronic component 2 and the second substrate 20 of the second substrate 20. It corresponds to the first main surface 21, the second main surface 22, and the second circuit unit 24.
- the material of the first substrate 10 and the material of the second substrate 20 are lithium niobates.
- the material of the first substrate 10 and the material of the second substrate 20 are the same. "The material of the first substrate 10 and the material of the second substrate 20 are the same" means that the main component of the first substrate 10 and the main component of the second substrate 20 are the same. The main component does not contain impurities.
- the main components of the first substrate 10 and the second substrate 20 are lithium, niobium and oxygen, and impurities are added to the lithium niobate. Even if it is, the main component does not contain impurities.
- the material of the first substrate 10 and the material of the second substrate 20 may be the same material as each other, and are not limited to lithium niobate, and may be, for example, lithium tantalate or quartz.
- the main components of each of the first substrate 10 and the second substrate 20 are lithium, tantalum and oxygen, and impurities are added to the lithium tantalate.
- the second electronic component 2 includes a plurality of second pad electrodes 26 formed on the first main surface 21 side of the second substrate 20 and connected to the second circuit unit 24. There is.
- the second circuit unit 24 includes a plurality of IDT electrodes 25.
- the high frequency module 100 further includes a plurality of second bumps 102 bonded to the plurality of second pad electrodes 26 and the mounting substrate 9.
- the plurality of IDT electrodes 25 of the bare chip elastic wave filter constituting the second electronic component 2 include the plurality of second pad electrodes 26, the plurality of second bumps 102, the second substrate 20, and the mounting substrate 9. It is arranged in the second space SP2 formed between the second substrate 20 and the mounting substrate 9 by the resin layer 5.
- each of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 is arranged on the first main surface 91 of the mounting substrate 9, and is a resin.
- the surface of the electronic component 8 covered with the layer 5 is rougher than the main surface (second main surface 802) opposite to the mounting substrate 9 side (the surface roughness is large).
- the maximum height roughness (Rz) of each of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 is such that the second main surface 802 is covered with the resin layer 5. It is larger than the maximum height roughness of the second main surface 802 of the electronic component 8.
- the maximum height roughness is a value measured from a STEM image when the cross section of the high frequency module 100 is observed by a STEM (Scanning Transmission Electron Microscope).
- the maximum height roughness is the maximum mountain height in each of the second main surface 12 of the first substrate 10, the second main surface 22 of the second substrate 20, and the second main surface 802 of the electronic component 8 in the STEM image. It is the sum of the value and the maximum value of the valley depth. That is, the maximum height roughness is determined by the uneven Peak to Valley on each of the second main surface 12 of the first substrate 10, the second main surface 22 of the second substrate 20, and the second main surface 802 of the electronic component 8.
- the surface roughness of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 is, for example, a process of roughening the first substrate 10 and the second substrate 20 by grinding or the like at the time of manufacturing. It can be changed depending on the conditions. In discussing the relative magnitude relationship of the surface roughness, the surface roughness is not limited to STEM, but may be a value obtained from, for example, an SEM (Scanning Electron Microscope) image.
- the shield layer 6 has a recognition mark 60.
- the recognition mark 60 includes a first portion 61 and a second portion 62.
- the first portion 61 is a portion of the shield layer 6 that overlaps the second main surface 12 of the first substrate 10 in the thickness direction D1 of the mounting substrate 9.
- the second portion 62 is a portion of the shield layer 6 that overlaps the second main surface 22 of the second substrate 20 in the thickness direction D1 of the mounting substrate 9.
- a portion of the shield layer 6 that does not overlap with any of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 in the thickness direction D1 of the mounting substrate 9 is provided.
- the main surface of the first portion 61 on the side opposite to the first substrate 10 side may have irregularities reflecting the irregularities of the second main surface 12 of the first substrate 10. Further, the main surface of the second portion 62 on the side opposite to the second substrate 20 side may have irregularities reflecting the irregularities of the second main surface 22 of the second substrate 20.
- the main surface 51 of 5 is substantially flush with each other, but the present invention is not limited to this.
- the high frequency module 100 includes a mounting substrate 9, a first electronic component 1 and a second electronic component 2, a resin layer 5, and a shield layer 6. ..
- the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
- the first electronic component 1 and the second electronic component 2 are arranged on the first main surface 91 of the mounting board 9.
- the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9 and covers the outer peripheral surface 13 of the first electronic component 1 and the outer peripheral surface 23 of the second electronic component 2.
- the shield layer 6 covers the resin layer 5, the first electronic component 1, and the second electronic component 2.
- the first electronic component 1 includes a first substrate 10 having a first main surface 11 and a second main surface 12 facing each other, and a first circuit unit 14 formed on the first main surface 11 side of the first substrate 10.
- the second electronic component 2 includes a second substrate 20 having a first main surface 21 and a second main surface 22 facing each other, and a second circuit unit 24 formed on the first main surface 21 side of the second substrate 20.
- the material of the first substrate 10 and the material of the second substrate 20 are the same.
- the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20.
- the high frequency module 100 according to the first embodiment can improve heat dissipation.
- the shield layer 6 is in contact with the entire second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 from the viewpoint of improving heat dissipation. Is preferable. However, it is not essential that the shield layer 6 is in contact with the entire surfaces of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20.
- the high frequency module 100 according to the first embodiment can dissipate the heat generated in the first electronic component 1 through the second main surface 12 and the shield layer 6 of the first substrate 10. As a result, the high frequency module 100 according to the first embodiment can suppress the temperature rise of the lithium niobate substrate or the lithium tantalate substrate constituting the first substrate 10. Therefore, the high-frequency module 100 according to the first embodiment can stabilize the temperature characteristics of the elastic wave filter constituting the first electronic component 1, and can stabilize the characteristics of the high-frequency module 100. Become.
- the high frequency module 100 according to the first embodiment can dissipate heat generated in the second electronic component 2 through the second main surface 22 and the shield layer 6 of the second substrate 20.
- the high frequency module 100 according to the first embodiment the temperature rise of the lithium niobate substrate or the lithium tantalate substrate constituting the second substrate 20 can be suppressed. Therefore, the high-frequency module 100 according to the first embodiment can stabilize the temperature characteristics of the elastic wave filter constituting the second electronic component 2, and can stabilize the characteristics of the high-frequency module 100. Become.
- the material of the first substrate 10 and the material of the second substrate 20 are the same. Therefore, for example, at the time of manufacturing, the first substrate 10 and the second substrate 20 are mounted on the mounting substrate 9 side. There is also an advantage that it is easy to grind when grinding from the opposite side.
- a manufacturing method of the high frequency module 100 for example, a manufacturing method including a first step, a second step, a third step, and a fourth step can be adopted.
- the first step is a step of arranging a plurality of electronic components 8 including the first electronic component 1 and the second electronic component 2 on the first main surface 91 of the mounting substrate 9.
- the second step is a step of covering a plurality of electronic components 8 and forming a resin material layer which is a source of the resin layer 5 on the first main surface 91 side of the mounting substrate 9.
- the resin material layer is ground from the main surface of the resin material layer opposite to the mounting substrate 9 side to expose the first substrate 10 of the first electronic component 1 and the second substrate 20 of the second electronic component 2.
- This is a step of forming the resin layer 5 and thinning the first substrate 10 and the second substrate 20 by grinding the resin material layer and the first substrate 10 and the second substrate 20.
- the shield layer 6 in contact with the main surface 51 of the resin layer 5, the second main surface 12 of the first substrate 10, and the second main surface 22 of the second substrate 20, is formed by, for example, a sputtering method, a vapor deposition method, or printing. It is a process formed by the method.
- each of the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 is mounted on the electronic component 8 covered with the resin layer 5. It is a rougher surface than the main surface (second main surface 802) on the side opposite to the substrate 9 side.
- an unnecessary wave for example, an unnecessary bulk wave propagating in a direction along the thickness direction of the lithium niobate substrate or the lithium tantalate substrate constituting the first substrate 10 is generated.
- an unnecessary wave for example, an unnecessary bulk wave
- the filter characteristics of the elastic wave filter constituting the second electronic component 2 can be improved.
- Examples of the improvement of the filter characteristics include suppression of harmonic distortion.
- the shield layer 6 has the recognition mark 60.
- a person can visually recognize the recognition mark 60.
- the first electronic component 1 is a transmission filter 112B constituting the duplexer 132B
- the elastic wave filter constituting the second electronic component 2 is a receiving filter constituting the duplexer 132B. It is 122B.
- the communication device 300 includes a signal processing circuit 301 and a high frequency module 100.
- the signal processing circuit 301 is connected to the high frequency module 100 and processes the high frequency signal.
- the communication device 300 includes the high frequency module 100, it is possible to improve the heat dissipation.
- the plurality of electronic components constituting the signal processing circuit 301 may be mounted on, for example, the above-mentioned circuit board, or a circuit board (first circuit board) different from the circuit board (first circuit board) on which the high frequency module 100 is mounted. It may be mounted on the second circuit board).
- the first electronic component 1 has a first spacer layer 17, a first cover member 18, and a plurality of first terminals 19 as components of the first package structure. This is different from the high frequency module 100 according to the first embodiment.
- the first spacer layer 17 and the first cover member 18 are provided on the first main surface 11 side of the first substrate 10.
- the first spacer layer 17 surrounds a plurality of IDT electrodes 15 in a plan view from the thickness direction D1 of the mounting substrate 9.
- the first spacer layer 17 has a rectangular frame shape in a plan view from the thickness direction D1 of the mounting substrate 9.
- the first spacer layer 17 has electrical insulation.
- the material of the first spacer layer 17 is an epoxy resin, polyimide, or the like.
- the first cover member 18 has a flat plate shape. The first cover member 18 is arranged on the first spacer layer 17 so as to face the first substrate 10 in the thickness direction D1 of the mounting substrate 9.
- the first cover member 18 overlaps with the plurality of IDT electrodes 15 in the thickness direction D1 of the mounting substrate 9, and is separated from the plurality of IDT electrodes 15 in the thickness direction D1 of the mounting substrate 9.
- the first cover member 18 has electrical insulation.
- the material of the first cover member 18 is an epoxy resin, polyimide, or the like.
- the first electronic component 1 has a first space S1 surrounded by a first substrate 10, a first spacer layer 17, and a first cover member 18.
- gas is contained in the first space S1.
- the gas is air, an inert gas (for example, nitrogen gas) or the like.
- the plurality of first terminals 19 are exposed from the first cover member 18.
- Each of the plurality of first terminals 19 is, for example, a bump.
- Each bump is, for example, a solder bump.
- Each bump is not limited to a solder bump, and may be, for example, a gold bump.
- the second electronic component 2 has a second spacer layer 27, a second cover member 28, and a plurality of second terminals 29 as constituent elements of the second package structure. It is different from the high frequency module 100 according to the first embodiment in that it has.
- the second spacer layer 27 and the second cover member 28 are provided on the first main surface 21 side of the second substrate 20.
- the second spacer layer 27 surrounds the plurality of IDT electrodes 25 in a plan view from the thickness direction D1 of the mounting substrate 9.
- the second spacer layer 27 has a rectangular frame shape in a plan view from the thickness direction D1 of the mounting substrate 9.
- the second spacer layer 27 has electrical insulation.
- the material of the second spacer layer 27 is an epoxy resin, polyimide, or the like.
- the second cover member 28 has a flat plate shape. The second cover member 28 is arranged on the second spacer layer 27 so as to face the second substrate 20 in the thickness direction D1 of the mounting substrate 9.
- the second cover member 28 overlaps with the plurality of IDT electrodes 25 in the thickness direction D1 of the mounting substrate 9, and is separated from the plurality of IDT electrodes 25 in the thickness direction D1 of the mounting substrate 9.
- the second cover member 28 has electrical insulation.
- the material of the second cover member 28 is epoxy resin, polyimide, or the like.
- the second electronic component 2 has a second space S2 surrounded by a second substrate 20, a second spacer layer 27, and a second cover member 28.
- gas is contained in the second space S2.
- the gas is air, an inert gas (for example, nitrogen gas) or the like.
- the plurality of second terminals 29 are exposed from the second cover member 28.
- Each of the plurality of second terminals 29 is, for example, a bump.
- Each bump is, for example, a solder bump.
- Each bump is not limited to a solder bump, and may be, for example, a gold bump.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100 according to the first embodiment. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100 according to the first modification can improve the heat dissipation property like the high-frequency module 100 according to the first embodiment.
- the first electronic component 1 is a first package in addition to the first filter chip 171 including the first substrate 10, the first circuit unit 14, and the plurality of first pad electrodes 16. It differs from the high-frequency module 100 according to the first embodiment in that it has a first package substrate 173, a plurality of bumps 174, and a first sealing resin portion 175 as constituent elements of the structure.
- the first package substrate 173 includes a first support 1730, a plurality of electrodes 1733, and a plurality of external connection electrodes 1734.
- the first support 1730 is flat and has a first main surface 1731 and a second main surface 1732 facing each other.
- the plurality of electrodes 1733 are arranged on the first main surface 1731 of the first support 1730.
- the plurality of external connection electrodes 1734 are arranged on the second main surface 1732 of the first support 1730.
- the first package substrate 173 further includes a plurality of through electrodes 1735 that electrically connect the plurality of electrodes 1733 and the plurality of external connection electrodes 1734 on a one-to-one basis.
- the first support 1730 has electrical insulation.
- the first support 1730 is, for example, a ceramic substrate (for example, an alumina substrate).
- the outer peripheral shape of the first package substrate 173 is rectangular, but is not limited to this.
- the plurality of bumps 174 join the plurality of first pad electrodes 16 of the first filter chip 171 and the plurality of electrodes 1733 of the first package substrate 173.
- the first sealing resin portion 175 is arranged on the first package substrate 173 and covers the outer peripheral surface of the first filter chip 171.
- the first electronic component 1 is formed with a first space S1 surrounded by a first filter chip 171, a first package substrate 173, and a first sealing resin portion 175.
- the first electronic component 1 is a CSP (Chip Size Package) type elastic wave filter, in which the first filter chip 171 is flip-chip mounted on the first package substrate 173, and the first on the first package substrate 173.
- the outer peripheral surface of the filter chip 171 is covered with the first sealing resin portion 175.
- the sizes of the first package substrate 173 and the first sealing resin portion 175 when viewed from the thickness direction of the first filter chip 171 are slightly larger than the chip size of the first filter chip 171.
- the high frequency module 100 further includes a plurality of first bumps 191 bonded to the plurality of external connection electrodes 1734 of the first electronic component 1 and the mounting substrate 9.
- the second electronic component 2 has a second package in addition to the second filter chip 271 including the second substrate 20, the second circuit unit 24, and the plurality of second pad electrodes 26. It differs from the high-frequency module 100 according to the first embodiment in that it has a second package substrate 273, a plurality of bumps 274, and a second sealing resin portion 275 as structural elements.
- the second package substrate 273 includes a second support 2730, a plurality of electrodes 2733, and a plurality of external connection electrodes 2734.
- the second support 2730 has a flat plate shape and has a first main surface 2731 and a second main surface 2732 facing each other.
- the plurality of electrodes 2733 are arranged on the first main surface 2731 of the second support 2730.
- the plurality of external connection electrodes 2734 are arranged on the second main surface 2732 of the second support 2730.
- the second package substrate 273 further includes a plurality of through electrodes 2735 that electrically connect the plurality of electrodes 2733 and the plurality of external connection electrodes 2734 on a one-to-one basis.
- the second support 2730 has electrical insulation.
- the second support 2730 is, for example, a ceramic substrate (for example, an alumina substrate).
- the outer peripheral shape of the second package substrate 273 is rectangular, but is not limited to this.
- the plurality of bumps 274 are joined to the plurality of second pad electrodes 26 of the second filter chip 271 and the plurality of electrodes 2733 of the second package substrate 273.
- the second sealing resin portion 275 is arranged on the second package substrate 273 and covers the outer peripheral surface of the second filter chip 271.
- the second electronic component 2 is formed with a second space S2 surrounded by a second filter chip 271, a second package substrate 273, and a second sealing resin portion 275.
- the second electronic component 2 is a CSP type elastic wave filter, in which the second filter chip 271 is flip-chip mounted on the second package substrate 273, and the outer circumference of the second filter chip 271 is mounted on the second package substrate 273.
- the surface is covered with the second sealing resin portion 275.
- the sizes of the second package substrate 273 and the second sealing resin portion 275 when viewed from the thickness direction of the second filter chip 271 are slightly larger than the chip size of the second filter chip 271.
- the high frequency module 100 further includes a plurality of second bumps 291 bonded to the plurality of external connection electrodes 2734 of the second electronic component 2 and the mounting substrate 9.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100 according to the first embodiment. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100 according to the second modification can improve the heat dissipation property like the high-frequency module 100 according to the first embodiment.
- the high frequency module 100 according to the modification 3 is different from the high frequency module 100 according to the modification 1 in that the first electronic component 1 is a BAW (Bulk Acoustic Wave) filter.
- the first substrate 10 in the first electronic component 1 is a silicon substrate, and each of the plurality of elastic wave resonators is a first BAW (Bulk Acoustic Wave) resonator 180.
- the first BAW resonator 180 includes a first electrode 181, a piezoelectric film 182, and a second electrode 183.
- the piezoelectric film 182 is formed on the first electrode 181.
- the second electrode 183 is formed on the piezoelectric film 182.
- the first BAW resonator 180 includes an electric insulating film 185 formed on the first main surface 11 of the first substrate 10.
- the material of the electric insulating film 185 is, for example, silicon oxide.
- the material of the piezoelectric membrane 182 is, for example, AlN, ScAlN or PZT.
- the first BAW resonator 180 has a cavity 184 on the side of the first electrode 181 opposite to the piezoelectric film 182 side.
- the first BAW resonator 180 can suppress the propagation of elastic wave energy to the first substrate 10 side by increasing the acoustic impedance ratio between the first electrode 181 and the medium immediately below the first electrode 181.
- the electromechanical coupling coefficient can be increased as compared with the case of not having.
- the first BAW resonator 180 is an FBAR (Film Bulk Acoustic Resonator).
- the high frequency module 100 according to the modification 3 is different from the high frequency module 100 according to the modification 1 in that the second electronic component 2 is a BAW filter.
- the second substrate 20 in the second electronic component 2 is a silicon substrate, and each of the plurality of elastic wave resonators is the second BAW resonator 280.
- the second BAW resonator 280 includes a first electrode 281, a piezoelectric film 282, and a second electrode 283.
- the piezoelectric film 282 is formed on the first electrode 281.
- the second electrode 283 is formed on the piezoelectric film 282.
- the second BAW resonator 280 includes an electric insulating film 285 formed on the first main surface 21 of the second substrate 20.
- the material of the electric insulating film 285 is, for example, silicon oxide.
- the material of the piezoelectric membrane 282 is, for example, AlN, ScAlN or PZT.
- the second BAW resonator 280 has a cavity 284 on the side of the first electrode 281 opposite to the piezoelectric film 282 side.
- the second BAW resonator 280 is an FBAR.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100 according to the modification 1. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100 according to the modification 3 can improve the heat dissipation property like the high-frequency module 100 according to the modification 1.
- the material of the first substrate 10 and the material of the second substrate 20 are the same means that the main component of the first substrate 10 and the main component of the second substrate 20 are the same. The main component does not contain impurities.
- each of the first substrate 10 and the second substrate 20 is a silicon substrate
- the main component of each of the first substrate 10 and the second substrate 20 is silicon, and even when impurities are added to the silicon substrate, the main component is main.
- the ingredients are free of impurities.
- the first BAW resonator 180 has an acoustic reflection layer A1 interposed between the first substrate 10 and the first electrodes 181 of the plurality of first BAW resonators 180. Therefore, it is different from the high frequency module 100 according to the third modification.
- the acoustic reflection layer A1 is provided on the first main surface 11 of the first substrate 10.
- the plurality of first electrodes 181 are provided on the acoustic reflection layer A1.
- the acoustic reflection layer A1 has at least one (for example, three) low acoustic impedance layers A11 and at least one (for example, two) high acoustic impedance layers A12.
- the low acoustic impedance layer A11 has a lower acoustic impedance than the high acoustic impedance layer A12.
- the first BAW resonator 180 is an SMR (Solidly Mounted Resonator).
- the material of the plurality of high acoustic impedance layers A12 is, for example, platinum.
- the material of the plurality of low acoustic impedance layers A11 is, for example, silicon oxide.
- the material of the plurality of high acoustic impedance layers A12 is not limited to platinum, and may be, for example, a metal such as tungsten or tantalum. Further, the material of the plurality of high acoustic impedance layers A12 is not limited to metal, and may be, for example, an insulator. Further, the plurality of high acoustic impedance layers A12 are not limited to the case where they are made of the same material, and may be made of different materials, for example.
- the plurality of low acoustic impedance layers A11 are not limited to the case where they are made of the same material, and may be made of different materials, for example. Further, the number of the high acoustic impedance layers A12 and the number of the low acoustic impedance layers A11 are not limited to different cases, and may be the same.
- the high frequency module 100 according to the fourth modification is provided with an acoustic reflection layer A2 in which the second BAW resonator 280 is interposed between the second substrate 20 and the first electrodes 281 of the plurality of second BAW resonators 280. , Different from the high frequency module 100 according to the third modification.
- the acoustic reflection layer A2 is provided on the first main surface 21 of the second substrate 20.
- the plurality of first electrodes 281 are provided on the acoustic reflection layer A2.
- the acoustic reflection layer A2 has at least one (for example, three) low acoustic impedance layers A21 and at least one (for example, two) high acoustic impedance layers A22.
- the low acoustic impedance layer A21 has a lower acoustic impedance than the high acoustic impedance layer A22.
- the second BAW resonator 280 is an SMR.
- the material of the plurality of high acoustic impedance layers A22 is, for example, platinum.
- the material of the plurality of low acoustic impedance layers A21 is, for example, silicon oxide.
- the material of the plurality of high acoustic impedance layers A22 is not limited to platinum, and may be, for example, a metal such as tungsten or tantalum. Further, the material of the plurality of high acoustic impedance layers A22 is not limited to metal, and may be, for example, an insulator. Further, the plurality of high acoustic impedance layers A22 are not limited to the case where they are made of the same material as each other, and may be made of different materials, for example.
- the plurality of low acoustic impedance layers A21 are not limited to the case where they are made of the same material as each other, and may be made of different materials, for example. Further, the number of high acoustic impedance layers A22 and the number of low acoustic impedance layers A21 are not limited to different cases, and may be the same.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100 according to the modification 3. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100 according to the modification 4 can improve the heat dissipation property like the high-frequency module 100 according to the modification 3.
- the high frequency module 100a according to the second embodiment will be described with reference to FIGS. 9 and 10.
- the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
- the circuit configuration of the high frequency module 100a is the same as the circuit configuration of the high frequency module 100 according to the first embodiment described with reference to FIG.
- the first electronic component 1 is an elastic wave filter
- the second electronic component 2 is an IC chip.
- the first substrate 10 included in the first electronic component 1 is a silicon substrate.
- the second substrate 20 included in the second electronic component 2 is a silicon substrate.
- the first electronic component 1 is, for example, a transmission filter 112B (see FIG. 4), but is not limited to this, and may be, for example, a transmission filter 112A (see FIG. 4).
- the elastic wave filter constituting the first electronic component 1 is a bare chip elastic wave filter.
- the bare-chip elastic wave filter includes a bass velocity film 193 provided on the first main surface 11 of the first substrate 10 and a piezoelectric layer 194 provided on the bass velocity film 193.
- a plurality of IDT electrodes 15 provided on the piezoelectric layer 194 and a plurality of first pad electrodes 16 are included.
- the plurality of first pad electrodes 16 are provided on the first main surface 11 of the first substrate 10.
- the bare-chip elastic wave filter has a rectangular shape in a plan view from the thickness direction thereof, but is not limited to this, and may be, for example, a square shape.
- the bass velocity film 193 is located away from the outer edge of the first substrate 10 in a plan view from the thickness direction of the bare chip elastic wave filter.
- the bare-chip elastic wave filter further includes an insulating layer 195 that covers a region of the first main surface 11 of the first substrate 10 that is not covered by the bass velocity film 193.
- the insulating layer 195 has an electrical insulating property.
- the insulating layer 195 is formed on the first main surface 11 of the first substrate 10 along the outer edge of the first substrate 10.
- the insulating layer 195 surrounds the plurality of IDT electrodes 15.
- the insulating layer 195 has a frame shape (for example, a rectangular frame shape) in a plan view from the thickness direction of the bare chip elastic wave filter.
- a part of the insulating layer 195 overlaps the outer peripheral portion of the piezoelectric layer 194 in the thickness direction of the bare chip elastic wave filter.
- the outer peripheral surface of the piezoelectric layer 194 and the outer peripheral surface of the bass velocity film 193 are covered with the insulating layer 195.
- the material of the insulating layer 195 is an epoxy resin, polyimide, or the like.
- the plurality of first pad electrodes 16 are provided on the first main surface 11 of the first substrate 10 via the insulating layer 195.
- the material of the piezoelectric layer 194 is, for example, lithium niobate or lithium tantalate.
- the bass velocity film 193 is a film in which the sound velocity of the bulk wave propagating in the bass velocity film 193 is lower than the sound velocity of the bulk wave propagating in the piezoelectric layer 194.
- the material of the bass velocity film 193 is, for example, silicon oxide.
- the material of the bass velocity film 193 is not limited to silicon oxide.
- the material of the bass velocity film 193 is, for example, silicon oxide, glass, silicon nitride, tantalum oxide, a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or a material containing each of the above materials as a main component. May be good.
- the sound velocity of the bulk wave propagating in the first substrate 10 is higher than the sound velocity of the elastic wave propagating in the piezoelectric layer 194.
- the bulk wave propagating on the first substrate 10 is the lowest sound velocity bulk wave among the plurality of bulk waves propagating on the first substrate 10.
- the bare-chip elastic wave filter may further have a hypersonic film provided between the first substrate 10 and the hypersonic film 193.
- the treble-velocity film is a film in which the sound velocity of a bulk wave propagating in a treble-velocity film is higher than the sound velocity of an elastic wave propagating in the piezoelectric layer 194.
- the material of the treble speed film is, for example, diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, piezoelectric material (lithium tantalate, lithium niobate, or crystal), alumina, zirconia, cordierite.
- the material of the high sound velocity film may be a material containing any of the above-mentioned materials as a main component, or a material containing a mixture containing any of the above-mentioned materials as a main component.
- the thickness of the piezoelectric layer 194 is 3.5 ⁇ or less, for example, when the wavelength of the elastic wave determined by the electrode finger period of the IDT electrode 15 is ⁇ .
- the thickness of the bass velocity film 193 is, for example, 2.0 ⁇ or less.
- the bare chip elastic wave filter may include, for example, an adhesion layer interposed between the bass velocity film 193 and the piezoelectric layer 194.
- the adhesion layer is made of, for example, a resin (epoxy resin, polyimide resin).
- the bare chip elastic wave filter may include a dielectric film between the bass speed film 193 and the piezoelectric layer 194, above the piezoelectric layer 194, or below the bass speed film 193.
- the IC chip constituting the second electronic component 2 includes, for example, a power amplifier 111 (see FIG. 4).
- the multilayer structure portion 203 including the wiring layer and the passivation film is provided on the first main surface 21 of the second substrate 20.
- a plurality of second pad electrodes 26 connected to the second circuit unit 24 via the wiring layer of the multilayer structure portion 203 and the like are multilayered. It is exposed from the structural part 203.
- the multilayer structure unit 203 includes each electrode of a transistor (for example, an HBT) constituting the second circuit unit 24.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100 according to the modification 4 of the first embodiment. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100a according to the second embodiment can improve the heat dissipation property like the high-frequency module 100 according to the fourth modification of the first embodiment.
- the material of the first substrate 10 and the material of the second substrate 20 are the same means that the main component of the first substrate 10 and the main component of the second substrate 20 are the same.
- the main component does not contain impurities.
- the main component of each of the first substrate 10 and the second substrate 20 is silicon, and even when impurities are added to the silicon substrate, the main component is main.
- the ingredients are free of impurities.
- the first electronic component 1 is preferably a transmission filter 112B or a transmission filter 112A, which is more likely to generate heat than the reception filters 122A and 122B.
- the high frequency module 100a it is possible to suppress fluctuations in the characteristics of the first electronic component 1 and fluctuations in the characteristics of the electronic component 8 adjacent to the first electronic component 1 among the plurality of electronic components 8. Become.
- the IC chip constituting the second electronic component 2 is not limited to the power amplifier 111, and may be, for example, a controller 115 (see FIG. 4) that controls the power amplifier 111.
- the IC chip constituting the second electronic component 2 may be a low noise amplifier 121 (see FIG. 4).
- the IC chip constituting the second electronic component 2 includes at least one of the first switch 104 (see FIG. 4), the second switch 105 (see FIG. 4), and the third switch 106 (see FIG. 4).
- An IC chip including the IC chip may be used.
- the IC chip constituting the second electronic component 2 may be a one-chip IC chip including the low noise amplifier 121 and the third switch 106.
- the IC chip constituting the second electronic component 2 may be a one-chip IC chip including a low noise amplifier 121, a first switch 104, a second switch 105, and a third switch 106.
- the IC chip constituting the second electronic component 2 may be an IPD (Integrated Passive Device).
- the second electronic component 2 is placed on the insulating layer 201 provided on the first main surface 21 of the second substrate 20 which is a silicon substrate and on the insulating layer 201. It has a silicon layer 202 provided.
- the second circuit unit 24 is formed on the first main surface 21 side of the second substrate 20 with respect to the silicon layer 202.
- the second substrate 20, the insulating layer 201, and the silicon layer 202 constitute the SOI (Silicon on Insulator) substrate 200.
- the multilayer structure portion 203 including the wiring layer and the passivation film is provided on the silicon layer 202. Further, in the high frequency module 100a according to the modified example of the second embodiment, in the second electronic component 2, a plurality of second pad electrodes 26 connected to the second circuit portion 24 via the wiring layer of the multilayer structure portion 203 and the like. However, it is exposed from the multilayer structure portion 203.
- the shield layer 6 is formed on the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 as in the high-frequency module 100a according to the second embodiment. Since they are in contact with each other, it is possible to improve heat dissipation.
- the second electronic component 2 is an IC chip using the SOI substrate 200, the electrical insulation separation between the second circuit unit 24 and the shield layer 6 can be achieved. It will be easier.
- the high frequency module 100b according to the third embodiment will be described with reference to FIG. Regarding the high frequency module 100b according to the third embodiment, the same components as the high frequency module 100a according to the second embodiment are designated by the same reference numerals and the description thereof will be omitted.
- the circuit configuration of the high frequency module 100b is the same as the circuit configuration of the high frequency module 100 according to the first embodiment described with reference to FIG.
- the IC chip constituting the second electronic component 2 has a through electrode 210 penetrating the second substrate 20 in the thickness direction of the second substrate 20.
- the through silicon via 210 is, for example, a TSV (through silicon via).
- An electrically insulating portion is interposed between the through electrode 210 and the second substrate 20.
- the material of the electrically insulating part is, for example, silicon oxide.
- the through electrode 210 is, for example, a columnar shape having a first end and a second end.
- the first end of the through electrode 210 is the ground layer of the mounting substrate 9 among the plurality of second pad electrodes 26 (see FIG. 10) connected to the second circuit unit 24 (see FIG. 10) in the second electronic component 2. It is connected to the second pad electrode 26 which is connected to.
- the second end of the through electrode 210 is in contact with the shield layer 6.
- the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20 as in the high frequency module 100a according to the second embodiment. Therefore, it is possible to improve the heat dissipation.
- the second electronic component 2 since the second electronic component 2 has the through electrode 210, it is possible to improve the grounding performance of the second circuit portion 24 of the second electronic component 2. Become.
- the high frequency module 100c according to the fourth embodiment will be described with reference to FIG. Regarding the high frequency module 100c according to the fourth embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted. In FIG. 13, the plurality of external connection terminals 80 (see FIG. 1) are not shown.
- the circuit configuration of the high frequency module 100c is the same as the circuit configuration of the high frequency module 100 according to the first embodiment described with reference to FIG.
- the first electronic component 1 is a duplexer 132A (see FIG. 4) including, for example, a transmission filter 112A and a reception filter 122A.
- the second electronic component 2 is a duplexer 132B (see FIG. 4) including a transmission filter 112B and a reception filter 122B.
- the shield layer 6 is the second main surface 12 and the second substrate 20 (see FIG. 2) of the first substrate 10 (see FIG. 2). Since it is in contact with the second main surface 22 of the above, it is possible to improve the heat dissipation.
- the high frequency module 100d according to the fifth embodiment will be described with reference to FIG. Regarding the high frequency module 100d according to the fifth embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
- the circuit configuration of the high frequency module 100d is the same as the circuit configuration of the high frequency module 100 according to the first embodiment described with reference to FIG.
- the high-frequency module 100d according to the fifth embodiment is different from the high-frequency module 100 according to the first embodiment in that a plurality of electronic components 8 include a third electronic component 3 arranged on the second main surface 92 of the mounting board 9. do.
- the high-frequency module 100d according to the fifth embodiment can be made smaller in size as seen from the thickness direction D1 of the mounting substrate 9 as compared with the high-frequency module 100 according to the first embodiment.
- each of the plurality of external connection terminals 80 includes a columnar electrode 800, which is different from the high frequency module 100 according to the first embodiment.
- the columnar electrode 800 is, for example, a columnar electrode.
- the high frequency module 100d further includes a resin layer 7.
- the resin layer 7 covers the outer peripheral surface 803 of the third electronic component 3 arranged on the second main surface 92 of the mounting substrate 9, and the outer peripheral surface of the columnar electrode 800.
- the shield layer 6 also covers the outer peripheral surface 73 of the resin layer 7.
- the second main surface 802 of the electronic component 8 arranged on the second main surface 92 of the mounting board 9 and the main surface 71 of the resin layer 7 opposite to the mounting board 9 side are used. Is almost flush.
- the shield layer 6 is the second main surface 12 and the second substrate 20 (see FIG. 2) of the first substrate 10 (see FIG. 2). Since it is in contact with the second main surface 22 of the above, it is possible to improve the heat dissipation.
- the resin layer 7 is formed so as to expose the second main surface 802 of the third electronic component 3, it is possible to suppress the temperature rise of the third electronic component 3. Become. Further, in the high frequency module 100d according to the fifth embodiment, it is possible to reduce the height in the configuration in which the electronic component 8 is also arranged on the second main surface 92 of the mounting substrate 9.
- the high frequency module 100e according to the sixth embodiment will be described with reference to FIGS. 15 and 16.
- the same components as the high frequency module 100d according to the fifth embodiment are designated by the same reference numerals and the description thereof will be omitted.
- the circuit configuration of the high-frequency module 100e is the same as the circuit configuration of the high-frequency module 100 according to the first embodiment described with reference to FIG. 4, but the number of selection terminals of the first switch 104 and the number of reception filters. Is increasing one by one.
- the first electronic component 1 is a duplexer 132A (see FIG. 4) including, for example, a transmission filter 112A and a reception filter 122A.
- the second electronic component 2 is a duplexer 132B (see FIG. 4) including a transmission filter 112B and a reception filter 122B.
- a plurality of electronic components 8 include a third electronic component 3 and a fourth electronic component 4 arranged on the second main surface 92 of the mounting board 9.
- the third electronic component 3 includes a third substrate 30 and a third circuit unit 34.
- the third substrate 30 has a first main surface 31 and a second main surface 32 facing each other.
- the third circuit unit 34 is formed on the first main surface 31 side of the third substrate 30.
- the third electronic component 3 is a reception filter different from the reception filters 122A and 122B.
- the third electronic component 3 is an elastic wave filter.
- the third substrate 30 is a silicon substrate.
- the third circuit unit 34 has a plurality of IDT electrodes 35.
- the elastic wave filters constituting the third electronic component 3 are a bass velocity film 393 provided on the first main surface 31 of the third substrate 30, and a piezoelectric layer 394 provided on the bass velocity film 393. And a plurality of IDT electrodes 35 provided on the piezoelectric layer 394. Therefore, the third circuit unit 34 has a plurality of IDT electrodes 35.
- the material of the piezoelectric layer 394 is, for example, lithium niobate or lithium tantalate.
- the bass velocity film 393 is a film in which the sound velocity of the bulk wave propagating in the bass velocity film 393 is lower than the sound velocity of the bulk wave propagating in the piezoelectric layer 394.
- the material of the bass velocity film 393 is, for example, silicon oxide, but is not limited thereto.
- the material of the bass velocity film 393 is, for example, silicon oxide, glass, silicon nitride, tantalum oxide, a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or a material containing each of the above materials as a main component. May be good.
- the speed of sound of the bulk wave propagating in the third substrate 30 is higher than the speed of sound of the elastic wave propagating in the piezoelectric layer 394.
- the bulk wave propagating on the third substrate 30 is the lowest sound velocity bulk wave among the plurality of bulk waves propagating on the third substrate 30.
- the third electronic component 3 may further have a hypersonic film provided between the third substrate 30 and the hypersonic film 393.
- the treble-velocity film is a film in which the sound velocity of a bulk wave propagating in a treble-velocity film is higher than the sound velocity of an elastic wave propagating in the piezoelectric layer 394.
- the material of the treble speed film is, for example, diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, piezoelectric material (lithium tantalate, lithium niobate, or crystal), alumina, zirconia, cordierite.
- the material of the high sound velocity film may be a material containing any of the above-mentioned materials as a main component, or a material containing a mixture containing any of the above-mentioned materials as a main component.
- the bass velocity film 393 is located away from the outer edge of the third substrate 30 in a plan view from the thickness direction of the third substrate 30.
- the third electronic component 3 further includes an insulating layer 395 that covers a region of the first main surface 31 of the third substrate 30 that is not covered by the bass velocity film 393.
- the insulating layer 395 has an electrical insulating property.
- the insulating layer 395 is formed on the first main surface 31 of the third substrate 30 along the outer edge of the third substrate 30.
- the insulating layer 395 surrounds the plurality of IDT electrodes 35.
- the insulating layer 395 has a frame shape (for example, a rectangular frame shape) in a plan view from the thickness direction of the third substrate 30.
- a part of the insulating layer 395 overlaps the outer peripheral portion of the piezoelectric layer 394 in the thickness direction of the third substrate 30.
- the outer peripheral surface of the piezoelectric layer 394 and the outer peripheral surface of the bass velocity film 393 are covered with an insulating layer 395.
- the material of the insulating layer 395 is an epoxy resin, polyimide, or the like.
- the third electronic component 3 has a third spacer layer 37, a third cover member 38, and a plurality of third terminals 39 as components of the third package structure.
- the third spacer layer 37 and the third cover member 38 are provided on the first main surface 31 side of the third substrate 30.
- the third spacer layer 37 surrounds the plurality of IDT electrodes 35 in a plan view from the thickness direction D1 of the mounting substrate 9.
- the third spacer layer 37 has a rectangular frame shape in a plan view from the thickness direction D1 of the mounting substrate 9.
- the third spacer layer 37 has electrical insulation.
- the material of the third spacer layer 37 is an epoxy resin, polyimide or the like.
- the third cover member 38 has a flat plate shape.
- the third cover member 38 is arranged on the third spacer layer 37 so as to face the third substrate 30 in the thickness direction D1 of the mounting substrate 9.
- the third cover member 38 overlaps with the plurality of IDT electrodes 35 in the thickness direction D1 of the mounting substrate 9, and is separated from the plurality of IDT electrodes 35 in the thickness direction D1 of the mounting substrate 9.
- the third cover member 38 has electrical insulation.
- the material of the third cover member 38 is epoxy resin, polyimide, or the like.
- the third electronic component 3 has a third space S3 surrounded by a third substrate 30, an insulating layer 395, a third spacer layer 37, and a third cover member 38.
- gas is contained in the third space S3.
- the gas is air, an inert gas (for example, nitrogen gas) or the like.
- the plurality of third terminals 39 are exposed from the third cover member 38.
- Each of the plurality of third terminals 39 is, for example, a bump.
- Each bump is, for example, a solder bump.
- Each bump is not limited to a solder bump, and may be, for example, a gold bump.
- the fourth electronic component 4 includes a fourth substrate 40 and a fourth circuit unit 44.
- the fourth substrate 40 has a first main surface 41 and a second main surface 42 facing each other.
- the fourth circuit unit 44 is formed on the first main surface 41 side of the fourth substrate 40.
- the fourth substrate 40 is, for example, a silicon substrate.
- the fourth electronic component 4 is an IC chip.
- the IC chip constituting the fourth electronic component 4 is, for example, a low noise amplifier 121 (see FIG. 4), but is not limited to this, for example, among the first switch 104, the second switch 105, and the third switch 106. It may be an IC chip containing at least one.
- a multilayer structure portion 403 including a wiring layer and a passivation film is provided on the first main surface 41 of the fourth substrate 40.
- a plurality of fourth pad electrodes 46 connected to the fourth circuit unit 44 via the wiring layer of the multilayer structure portion 403 and the like are multilayered. It is exposed from the structural part 403.
- the high frequency module 100e according to the sixth embodiment further includes a plurality of fourth bumps 144 bonded to the plurality of fourth pad electrodes 46 and the mounting substrate 9.
- each of the plurality of external connection terminals 80 is a columnar electrode.
- the columnar electrode is, for example, a columnar electrode.
- the resin layer 7 is an outer peripheral surface 33 of the third electronic component 3 arranged on the second main surface 92 of the mounting board 9, and a fourth electronic component 4 arranged on the second main surface 92 of the mounting board 9. It covers the outer peripheral surface 43 and the outer peripheral surfaces of a plurality of external connection terminals 80 arranged on the second main surface 92 of the mounting board 9.
- the resin layer 7 is formed so as to expose the second main surface 32 of the third substrate 30 and the second main surface 42 of the fourth substrate 40.
- the second main surface 32 of the third substrate 30 and the second main surface 42 of the fourth substrate 40 and the main surface 71 of the resin layer 7 opposite to the mounting substrate 9 side are omitted. It is flush.
- the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20, similarly to the high frequency module 100 according to the first embodiment. Therefore, it is possible to improve the heat dissipation.
- each of the second main surface 32 of the third substrate 30 and the second main surface 42 of the fourth substrate 40 is exposed.
- the material of the third substrate 30 and the material of the fourth substrate 40 are the same. "The material of the third substrate 30 and the material of the fourth substrate 40 are the same" means that the main component of the third substrate 30 and the main component of the fourth substrate 40 are the same.
- the main component does not contain impurities.
- the main component of each of the third substrate 30 and the fourth substrate 40 is silicon, and even when impurities are added to the silicon substrate, the main component is main.
- the ingredients are free of impurities.
- the third substrate 30 is a silicon substrate
- a natural oxide film (silicon oxide film) having a thickness of about 20 nm to 100 nm may be contained on the second main surface 32 side.
- the second main surface 32 of the third substrate 30 is exposed includes that the silicon oxide film is exposed.
- the fourth substrate 40 is a silicon substrate, it may include a natural oxide film (silicon oxide film) having a thickness of about 20 nm to 100 nm on the second main surface 42 side. In this case, “the second main surface 42 of the fourth substrate 40 is exposed” includes that the silicon oxide film is exposed.
- the high frequency module 100e according to the sixth embodiment it is possible to suppress the temperature rise of the third electronic component 3 and the fourth electronic component 4. Further, in the high frequency module 100e according to the sixth embodiment, it is possible to reduce the height in the configuration in which the electronic component 8 is also arranged on the second main surface 92 of the mounting substrate 9.
- the material of the third substrate 30 and the material of the fourth substrate 40 are the same. Therefore, for example, at the time of manufacturing, the third substrate 30 and the fourth substrate 40 are mounted on the mounting substrate 9 side. There is also an advantage that it is easy to grind when grinding from the opposite side. However, it is not essential to grind the third substrate 30 and the fourth substrate 40.
- the high frequency module 100e according to the first modification is different from the high frequency module 100e according to the sixth embodiment in that the third electronic component 3 is a bare chip elastic wave filter.
- a plurality of third pad electrodes 36 are formed on the insulating layer 395 of the third electronic component 3. Further, the high frequency module 100e according to the first modification further includes a plurality of third bumps 103 bonded to the plurality of third pad electrodes 36 and the mounting substrate 9.
- the plurality of IDT electrodes 35 of the bare chip elastic wave filter constituting the third electronic component 3 include the plurality of third pad electrodes 36, the plurality of third bumps 103, the third substrate 30, and the mounting substrate 9. It is arranged in the third space SP3 formed between the third substrate 30 and the mounting substrate 9 by the resin layer 7.
- the high-frequency module 100e according to the first modification can reduce the height of the third electronic component 3 as compared with the high-frequency module 100e according to the sixth embodiment, the overall height of the high-frequency module 100e can be reduced.
- the high frequency module 100e according to the second modification is different from the high frequency module 100e according to the sixth embodiment in that a plurality of external connection terminals 80 are ball bumps. Further, the high frequency module 100e according to the second modification is different from the high frequency module 100e according to the sixth embodiment in that the resin layer 7 of the high frequency module 100e according to the sixth embodiment is not provided.
- the high-frequency module 100e according to the second modification may include an underfill portion provided in a gap between the fourth electronic component 4 and the second main surface 92 of the mounting substrate 9.
- the material of the ball bumps constituting each of the plurality of external connection terminals 80 is, for example, gold, copper, solder, or the like.
- the plurality of external connection terminals 80 may be a mixture of an external connection terminal 80 composed of ball bumps and an external connection terminal 80 composed of columnar electrodes.
- the material of the first substrate 10 and the material of the second substrate 20 are the same as in the high frequency module 100e according to the sixth embodiment. Further, the shield layer 6 is in contact with the second main surface 12 of the first substrate 10 and the second main surface 22 of the second substrate 20. Therefore, the high-frequency module 100e according to the second modification of the sixth embodiment can improve the heat dissipation like the high-frequency module 100e according to the sixth embodiment.
- the entire area of the second main surface 32 of the third substrate 30 in the third electronic component 3 and the entire area of the second main surface 42 of the fourth substrate 40 in the fourth electronic component 4 are exposed. Not limited to this case, only a part of the second main surface 32 and a part of the second main surface 42 may be exposed.
- the BAW filter constituting each of the first electronic component 1 and the second electronic component 2 described above includes an element of a package structure, but the present invention is not limited to this, and a bare chip BAW filter may be used.
- the structure is not limited to that shown in FIG. 7.
- the first BAW resonator 180 instead of forming a cavity 184 in the first substrate 10, a part of the electric insulating film 185 is formed with a cavity between the first main surface 11 of the first substrate 10. It may be arranged in.
- the first electrode 181 is formed on the side of the electric insulating film 185 opposite to the cavity side
- the piezoelectric film 182 is formed on the first electrode 181
- the second electrode 183 is formed on the piezoelectric film 182.
- the structure may be the same.
- the cavity between a part of the electric insulating film 185 and the first main surface 11 of the first substrate 10 can be formed by using, for example, a sacrificial layer etching technique.
- the second BAW resonator 280 instead of forming a cavity 284 in the second substrate 20, a part of the electric insulating film 285 is formed with a cavity between the first main surface 21 of the second substrate 20. It may be arranged in.
- the first electrode 281 is formed on the side of the electric insulating film 285 opposite to the cavity side
- the piezoelectric film 282 is formed on the first electrode 281
- the second electrode 283 is formed on the piezoelectric film 282.
- the structure may be the same.
- the cavity between a part of the electric insulating film 285 and the first main surface 21 of the second substrate 20 can be formed by using, for example, a sacrificial layer etching technique.
- the filters such as the transmission filters 112A and 112B and the reception filters 122A and 122B are not limited to the ladder type filters, and may be, for example, a longitudinally coupled resonator type surface acoustic wave filter.
- the above-mentioned elastic wave filter is an elastic wave filter that utilizes a surface acoustic wave or a bulk elastic wave, but is not limited to this, and may be, for example, an elastic wave filter that utilizes an elastic boundary wave, a plate wave, or the like. good.
- Each of the plurality of first bumps 101, the plurality of second bumps 102, the plurality of third bumps 103, and the plurality of fourth bumps 144 is, for example, a solder bump, but is not limited to this, and is, for example, a gold bump. May be good.
- the electronic components 8 other than the first electronic component 1 and the second electronic component 2 are not limited to the case where they are electrically connected to the mounting substrate 9 via bumps, and for example, a bonding wire is used. It may be electrically connected to the mounting board 9 via the mounting board 9.
- the circuit configuration of the high frequency modules 100 to 100e is not limited to the above example. Further, the high frequency modules 100 to 100e may have, for example, a high frequency front end circuit corresponding to MIMO (Multi Input Multi Output) as a circuit configuration.
- MIMO Multi Input Multi Output
- the communication device 300 may include any one of the high frequency modules 100a, 100b, 100c, 100d, and 100e instead of the high frequency module 100.
- the high-frequency module (100; 100a; 100b; 100c; 100d; 100e) includes a mounting substrate (9), a first electronic component (1) and a second electronic component (2), and a resin layer ( 5) and a shield layer (6) are provided.
- the mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other.
- the first electronic component (1) and the second electronic component (2) are arranged on the first main surface (91) of the mounting board (9).
- the resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9), and is the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface of the second electronic component (2). It covers (23).
- the shield layer (6) covers the resin layer (5), the first electronic component (1), and the second electronic component (2).
- the first electronic component (1) has a first substrate (10) having a first main surface (11) and a second main surface (12) facing each other, and a first main surface (11) of the first substrate (10). ) Includes a first circuit section (14) formed on the side.
- the second electronic component (2) has a second substrate (20) having a first main surface (21) and a second main surface (22) facing each other, and a first main surface (21) of the second substrate (20). ) Includes a second circuit section (24) formed on the side.
- the material of the first substrate (10) and the material of the second substrate (20) are the same.
- the shield layer (6) is in contact with the second main surface (12) of the first substrate (10) and the second main surface (22) of the second substrate (20).
- the high frequency module (100; 100a; 100b; 100c; 100d; 100e) according to the first aspect can improve heat dissipation.
- each of the first electronic component (1) and the second electronic component (2) is an elastic wave filter.
- Each of the first substrate (10) and the second substrate (20) is a lithium niobate substrate or a lithium tantalate substrate.
- the temperature rise of the elastic wave filter constituting each of the first electronic component (1) and the second electronic component (2) can be suppressed, and the characteristics can be stabilized. Is possible.
- each of the first electronic component (1) and the second electronic component (2) is an elastic wave filter.
- Each of the first substrate (10) and the second substrate (20) is a silicon substrate.
- the high frequency module (100) according to the third aspect, it is possible to improve the filter performance of each of the first electronic component (1) and the second electronic component (2).
- each of the first electronic component (1) and the second electronic component (2) is a bare chip. It is an elastic wave filter.
- the height of the first electronic component (1) and the second electronic component (2) can be reduced, and the high frequency module can be reduced. (100; 100a; 100b; 100c; 100d; 100e) It is possible to reduce the overall height.
- the elastic wave filter constituting the first electronic component (1) is a duplexer (132B). It is a transmission filter (112B) which constitutes.
- the elastic wave filter constituting the second electronic component (2) is the receiving filter (122B) constituting the duplexer (132B).
- the high frequency module (100; 100a; 100b) it is possible to suppress the deterioration of the characteristics of the transmission filter (112B) and the reception filter (122B) due to the temperature rise.
- each of the first substrate (10) and the second substrate (20) is a silicon substrate.
- the high frequency module (100; 100a) according to the sixth aspect there are many choices of device types for the first electronic component (1) and the second electronic component (2). Further, in the high frequency module (100; 100a) according to the sixth aspect, when a manufacturing process for grinding the first substrate (10) and the second substrate (20) is adopted, grinding becomes easier.
- the first electronic component (1) is an elastic wave filter.
- the second electronic component (2) is an IC chip.
- the IC chip includes a power amplifier (111).
- the heat generated by the power amplifier (111) is easily dissipated through the shield layer (6).
- the IC chip is a controller (115) that controls the power amplifier (111).
- the heat generated by the controller (115) is easily dissipated through the shield layer (6).
- the IC chip includes a low noise amplifier (121).
- the heat generated by the low noise amplifier (121) is easily dissipated through the shield layer (6).
- the IC chip includes a switch (first switch 104; second switch 105; third switch 106).
- the heat generated by the switches (first switch 104; second switch 105; third switch 106) is easily dissipated through the shield layer (6).
- the IC chip penetrates the second substrate (20) in the thickness direction of the second substrate (20). It has a through silicon via (210).
- the high frequency module (100b) according to the twelfth aspect, it is possible to improve the grounding performance of the IC chip.
- the high frequency module (100; 100a; 100b; 100c; 100d; 100e) according to the thirteenth aspect is attached to the first main surface (91) of the mounting substrate (9) in any one of the first to twelfth aspects. It further comprises an electronic component (8) that is arranged and covered with a resin layer (5).
- the maximum height roughness of each of the second main surface (12) of the first substrate (10) and the second main surface (22) of the second substrate (20) is covered with the resin layer (5). It is larger than the maximum height roughness of the main surface (second main surface 802) on the side opposite to the mounting board (9) side in the component (8).
- the shield layer (6) has a recognition mark (60). ..
- the recognition mark (60) includes a first portion (61) and a second portion (62).
- the first portion (61) is a portion of the shield layer (6) that overlaps the second main surface (12) of the first substrate (10) in the thickness direction (D1) of the mounting substrate (9).
- the second portion (62) is a portion of the shield layer (6) that overlaps the second main surface (22) of the second substrate (20) in the thickness direction (D1) of the mounting substrate (9).
- the high frequency module (100; 100a; 100b; 100c; 100d; 100e) according to the fourteenth aspect enables a person to visually recognize the recognition mark (60).
- the high frequency module (100d; 100e) according to the fifteenth aspect further includes a third electronic component (3) in any one of the first to fourteenth aspects.
- the third electronic component (3) is arranged on the second main surface (92) of the mounting board (9).
- the high frequency module (100d; 100e) it is possible to reduce the size of the mounting substrate (9) as viewed from the thickness direction (D1).
- the high frequency module (100e) according to the sixteenth aspect further includes a fourth electronic component (4) in the fifteenth aspect.
- the fourth electronic component (4) is arranged on the second main surface (92) of the mounting board (9).
- the third electronic component (3) has a third substrate (30) having a first main surface (31) and a second main surface (32) facing each other, and a first main surface (31) of the third substrate (30).
- ) Includes a third circuit section (34) formed on the side.
- the fourth electronic component (4) has a fourth substrate (40) having a first main surface (41) and a second main surface (42) facing each other, and a first main surface (41) of the fourth substrate (40).
- the material of the third substrate (30) and the material of the fourth substrate (40) are the same.
- the high frequency module (100e) it is possible to reduce the size of the mounting substrate (9) as viewed from the thickness direction (D1).
- the high frequency module (100; 100a; 100b; 100c; 100d; 100e) according to the 17th aspect further includes an external connection terminal (80) in any one of the 1st to 16th aspects.
- the external connection terminal (80) is arranged on the second main surface (92) of the mounting board (9).
- the heat generated in the first electronic component (1) and the second electronic component (2) is dissipated through the shield layer (6). It becomes easy to be done.
- the communication device (300) according to the eighteenth aspect comprises a high frequency module (100; 100a; 100b; 100c; 100d; 100e) according to any one of the first to seventeenth aspects and a signal processing circuit (301). Be prepared.
- the signal processing circuit (301) is connected to a high frequency module (100; 100a; 100b; 100c; 100d; 100e) and processes a high frequency signal.
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Abstract
Description
実施形態1に係る高周波モジュール100は、例えば、図1~3に示すように、実装基板9と、第1電子部品1及び第2電子部品2と、樹脂層5と、シールド層6と、を備える。実装基板9は、互いに対向する第1主面91及び第2主面92を有する。第1電子部品1及び第2電子部品2は、実装基板9の第1主面91に配置されている。樹脂層5は、実装基板9の第1主面91に配置されており、第1電子部品1の外周面13(図2参照)及び第2電子部品2の外周面23(図2参照)を覆っている。シールド層6は、樹脂層5と第1電子部品1及び第2電子部品2を覆っている。第1電子部品1は、互いに対向する第1主面11及び第2主面12を有する第1基板10と、第1基板10の第1主面11側に形成された第1回路部14と、を含む。第2電子部品2は、互いに対向する第1主面21及び第2主面22を有する第2基板20と、第2基板20の第1主面21側に形成された第2回路部24と、を含む。第1基板10の材料と、第2基板20の材料とが、同じである。シールド層6は、第1基板10の第2主面12及び第2基板20の第2主面22に接している。実施形態1に係る高周波モジュール100は、放熱性の向上を図ることが可能となる。
(1.1)高周波モジュール及び通信装置の回路構成
高周波モジュール100は、例えば、通信装置300に用いられる。通信装置300は、例えば、携帯電話(例えば、スマートフォン)であるが、これに限らず、例えば、ウェアラブル端末(例えば、スマートウォッチ)等であってもよい。高周波モジュール100は、例えば、4G(第4世代移動通信)規格、5G(第5世代移動通信)規格等に対応可能なモジュールである。4G規格は、例えば、3GPP(Third Generation Partnership Project) LTE(Long Term Evolution)規格である。5G規格は、例えば、5G NR(New Radio)である。高周波モジュール100は、例えば、キャリアアグリゲーション及びデュアルコネクティビティに対応可能なモジュールである。
高周波モジュール100は、図2に示すように、実装基板9と、複数の電子部品8と、複数の外部接続端子80と、を備える。複数の電子部品8は、上述のパワーアンプ111、ローノイズアンプ121、2つの送信フィルタ112A,112B、2つの受信フィルタ122A,122B、出力整合回路113のインダクタ及び入力整合回路123のインダクタを含む。つまり、複数の電子部品8は、上述の第1電子部品1である送信フィルタ112Bと、上述の第2電子部品2である受信フィルタ122Bと、を含む。ここにおいて、第1電子部品1は、複数のデュプレクサ132A,132Bのうち送信帯域と受信帯域との間隔が最も狭いデュプレクサ132Bの送信フィルタ112Bである。また、第2電子部品2は、複数のデュプレクサ132A,132Bのうち送信帯域と受信帯域との間隔が最も狭いデュプレクサ132Bの受信フィルタ122Bである。また、複数の電子部品8は、上述の第1スイッチ104、第2スイッチ105及び第3スイッチ106を更に含む。
(2.1)高周波モジュール
実施形態に係る高周波モジュール100は、実装基板9と、第1電子部品1及び第2電子部品2と、樹脂層5と、シールド層6と、を備える。実装基板9は、互いに対向する第1主面91及び第2主面92を有する。第1電子部品1及び第2電子部品2は、実装基板9の第1主面91に配置されている。樹脂層5は、実装基板9の第1主面91に配置されており、第1電子部品1の外周面13及び第2電子部品2の外周面23を覆っている。シールド層6は、樹脂層5と第1電子部品1及び第2電子部品2を覆っている。第1電子部品1は、互いに対向する第1主面11及び第2主面12を有する第1基板10と、第1基板10の第1主面11側に形成された第1回路部14と、を含む。第2電子部品2は、互いに対向する第1主面21及び第2主面22を有する第2基板20と、第2基板20の第1主面21側に形成された第2回路部24と、を含む。第1基板10の材料と、第2基板20の材料とが、同じである。シールド層6は、第1基板10の第2主面12及び第2基板20の第2主面22に接している。
実施形態1に係る通信装置300は、信号処理回路301と、高周波モジュール100と、を備える。信号処理回路301は、高周波モジュール100に接続されており、高周波信号を信号処理する。
(3.1)変形例1
実施形態1の変形例1に係る高周波モジュール100について、図5を参照して説明する。変形例1に係る高周波モジュール100に関し、実施形態1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。
実施形態1の変形例2に係る高周波モジュール100について、図6を参照して説明する。変形例2に係る高周波モジュール100に関し、実施形態1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。
実施形態1の変形例3に係る高周波モジュール100について、図7を参照して説明する。変形例3に係る高周波モジュール100に関し、実施形態1の変形例1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。
実施形態1の変形例4に係る高周波モジュール100について、図8を参照して説明する。変形例4に係る高周波モジュール100に関し、実施形態1の変形例3に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。
実施形態2に係る高周波モジュール100aについて、図9及び10を参照して説明する。実施形態2に係る高周波モジュール100aに関し、実施形態1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。なお、高周波モジュール100aの回路構成については、図4を参照して説明した実施形態1に係る高周波モジュール100の回路構成と同様である。
実施形態2の変形例に係る高周波モジュール100aについて、図11を参照して説明する。実施形態2の変形例に係る高周波モジュール100aに関し、実施形態2に係る高周波モジュール100aと同様の構成要素については、同一の符号を付して説明を省略する。
実施形態3に係る高周波モジュール100bについて、図12を参照して説明する。実施形態3に係る高周波モジュール100bに関し、実施形態2に係る高周波モジュール100aと同様の構成要素については、同一の符号を付して説明を省略する。なお、高周波モジュール100bの回路構成については、図4を参照して説明した実施形態1に係る高周波モジュール100の回路構成と同様である。
実施形態4に係る高周波モジュール100cについて、図13を参照して説明する。実施形態4に係る高周波モジュール100cに関し、実施形態1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。図13では、複数の外部接続端子80(図1参照)の図示を省略している。なお、高周波モジュール100cの回路構成については、図4を参照して説明した実施形態1に係る高周波モジュール100の回路構成と同様である。
実施形態5に係る高周波モジュール100dについて、図14を参照して説明する。実施形態5に係る高周波モジュール100dに関し、実施形態1に係る高周波モジュール100と同様の構成要素については、同一の符号を付して説明を省略する。なお、高周波モジュール100dの回路構成については、図4を参照して説明した実施形態1に係る高周波モジュール100の回路構成と同様である。
実施形態6に係る高周波モジュール100eについて、図15及び16を参照して説明する。実施形態6に係る高周波モジュール100eに関し、実施形態5に係る高周波モジュール100dと同様の構成要素については、同一の符号を付して説明を省略する。なお、高周波モジュール100eの回路構成については、図4を参照して説明した実施形態1に係る高周波モジュール100の回路構成と同様であるが、第1スイッチ104の選択端子の数及び受信フィルタの数が1つずつ増えている。
実施形態6の変形例1に係る高周波モジュール100eについて、図17及び18を参照して説明する。実施形態6の変形例1に係る高周波モジュール100eに関し、実施形態6に係る高周波モジュール100eと同様の構成要素については、同一の符号を付して説明を省略する。
実施形態6の変形例2に係る高周波モジュール100eについて、図19を参照して説明する。実施形態6の変形例2に係る高周波モジュール100eに関し、実施形態6に係る高周波モジュール100eと同様の構成要素については、同一の符号を付して説明を省略する。
本明細書には、以下の態様が開示されている。
1 第1電子部品
10 第1基板
11 第1主面
12 第2主面
13 外周面
14 第1回路部
15 IDT電極
16 第1パッド電極
17 第1スペーサ層
18 第1カバー部材
19 第1端子
193 低音速膜
194 圧電体層
195 絶縁層
2 第2電子部品
20 第2基板
21 第1主面
22 第2主面
23 外周面
24 第2回路部
25 IDT電極
26 第2パッド電極
27 第2スペーサ層
28 第2カバー部材
29 第2端子
200 SOI基板
201 絶縁層
202 シリコン層
203 多層構造部
3 第3電子部品
30 第3基板
31 第1主面
32 第2主面
33 外周面
34 第3回路部
35 IDT電極
39 第3端子
393 低音速膜
394 圧電体層
395 絶縁層
4 第4電子部品
40 第4基板
41 第1主面
42 第2主面
43 外周面
44 第4回路部
46 第4パッド電極
403 多層構造部
5 樹脂層
51 主面
53 外周面
6 シールド層
60 認識マーク
61 第1部分
62 第2部分
63 第3部分
7 樹脂層
71 主面
73 外周面
8 電子部品
801 第1主面
802 第2主面
803 外周面
9 実装基板
91 第1主面
92 第2主面
93 外周面
80 外部接続端子
81 アンテナ端子
82 信号入力端子
83 信号出力端子
84 制御端子
85 グランド端子
101 第1バンプ
102 第2バンプ
103 第3バンプ
144 第4バンプ
104 第1スイッチ
140 共通端子
141、142 選択端子
105 第2スイッチ
150 共通端子
151、152 選択端子
106 第3スイッチ
160 共通端子
161、162 選択端子
111 パワーアンプ
112A、112B 送信フィルタ
113 出力整合回路
115 コントローラ
121 ローノイズアンプ
122A、122B 受信フィルタ
123 入力整合回路
132A デュプレクサ
132B デュプレクサ
171 第1フィルタチップ
173 第1パッケージ基板
1730 第1支持体
1731 第1主面
1732 第2主面
1733 電極
1734 外部接続電極
1735 貫通電極
174 バンプ
175 第1封止樹脂部
180 第1BAW共振子
181 第1電極
182 圧電体膜
183 第2電極
184 空洞
185 電気絶縁膜
271 第2フィルタチップ
273 第2パッケージ基板
2730 第2支持体
2731 第1主面
2732 第2主面
2733 電極
2734 外部接続電極
2735 貫通電極
274 バンプ
275 第2封止樹脂部
280 第2BAW共振子
281 第1電極
282 圧電体膜
283 第2電極
284 空洞
285 電気絶縁膜
300 通信装置
301 信号処理回路
302 RF信号処理回路
303 ベースバンド信号処理回路
310 アンテナ
A1 音響反射層
A11 低音響インピーダンス層
A12 高音響インピーダンス層
A2 音響反射層
A21 低音響インピーダンス層
A22 高音響インピーダンス層
D1 厚さ方向
S1 第1空間
S2 第2空間
SP1 第1空間
SP2 第2空間
SP3 第3空間
SP4 第4空間
Claims (18)
- 互いに対向する第1主面及び第2主面を有する実装基板と、
前記実装基板の前記第1主面に配置されている第1電子部品及び第2電子部品と、
前記実装基板の前記第1主面に配置されており、前記第1電子部品の外周面及び前記第2電子部品の外周面を覆っている樹脂層と、
前記樹脂層と前記第1電子部品及び前記第2電子部品を覆っているシールド層と、を備え、
前記第1電子部品は、
互いに対向する第1主面及び第2主面を有する第1基板と、
前記第1基板の前記第1主面側に形成された第1回路部と、を含み、
前記第2電子部品は、
互いに対向する第1主面及び第2主面を有する第2基板と、
前記第2基板の前記第1主面側に形成された第2回路部と、を含み、
前記第1基板の材料と、前記第2基板の材料とが、同じであり、
前記シールド層は、前記第1基板の前記第2主面及び前記第2基板の前記第2主面に接している、
高周波モジュール。 - 前記第1電子部品及び前記第2電子部品の各々は、弾性波フィルタであり、
前記第1基板及び前記第2基板の各々は、リチウムニオベイト基板又はリチウムタンタレート基板である、
請求項1に記載の高周波モジュール。 - 前記第1電子部品及び前記第2電子部品の各々は、弾性波フィルタであり、
前記第1基板及び前記第2基板の各々は、シリコン基板である、
請求項1に記載の高周波モジュール。 - 前記第1電子部品及び前記第2電子部品の各々は、ベアチップの弾性波フィルタである、
請求項1に記載の高周波モジュール。 - 前記第1電子部品を構成する前記弾性波フィルタは、デュプレクサを構成する送信フィルタであり、
前記第2電子部品を構成する前記弾性波フィルタは、前記デュプレクサを構成する受信フィルタである、
請求項2~4のいずれか一項に記載の高周波モジュール。 - 前記第1基板及び前記第2基板の各々は、シリコン基板である、
請求項1に記載の高周波モジュール。 - 前記第1電子部品は、弾性波フィルタであり、
前記第2電子部品は、ICチップである、
請求項6に記載の高周波モジュール。 - 前記ICチップは、パワーアンプを含む、
請求項7に記載の高周波モジュール。 - 前記ICチップは、パワーアンプを制御するコントローラである、
請求項7に記載の高周波モジュール。 - 前記ICチップは、ローノイズアンプを含む、
請求項7に記載の高周波モジュール。 - 前記ICチップは、スイッチを含む、
請求項7又は9に記載の高周波モジュール。 - 前記ICチップは、前記第2基板を前記第2基板の厚さ方向に貫通している貫通電極を有する、
請求項7~11のいずれか一項に記載の高周波モジュール。 - 前記実装基板の前記第1主面に配置されており、前記樹脂層に覆われている電子部品を更に備え、
前記第1基板の前記第2主面及び前記第2基板の前記第2主面の各々の最大高さ粗さが、前記樹脂層に覆われている電子部品における前記実装基板側とは反対側の主面の最大高さ粗さよりも大きい、
請求項1~12のいずれか一項に記載の高周波モジュール。 - 前記シールド層は、認識マークを有し、
前記認識マークは、
前記シールド層のうち前記実装基板の厚さ方向において前記第1基板の前記第2主面に重なる第1部分と、
前記シールド層のうち前記実装基板の前記厚さ方向において前記第2基板の前記第2主面に重なる第2部分と、を含む、
請求項1~12のいずれか一項に記載の高周波モジュール。 - 前記実装基板の前記第2主面に配置されている第3電子部品を更に備える、
請求項1~14のいずれか一項に記載の高周波モジュール。 - 前記実装基板の前記第2主面に配置されている第4電子部品を更に備え、
前記第3電子部品は、
互いに対向する第1主面及び第2主面を有する第3基板と、
前記第3基板の前記第1主面側に形成された第3回路部と、を含み、
前記第4電子部品は、
互いに対向する第1主面及び第2主面を有する第4基板と、
前記第4基板の前記第1主面側に形成された第4回路部と、を含み、
前記第3基板の前記第2主面及び前記第4基板の前記第2主面それぞれの少なくとも一部が露出しており、
前記第3基板の材料と、前記第4基板の材料とが、同じである、
請求項15に記載の高周波モジュール。 - 前記実装基板の前記第2主面に配置されている外部接続端子を更に備える、
請求項1~16のいずれか一項に記載の高周波モジュール。 - 請求項1~17のいずれか一項に記載の高周波モジュールと、
前記高周波モジュールに接続されており、高周波信号を信号処理する信号処理回路と、を備える、
通信装置。
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WO2023199861A1 (ja) * | 2022-04-12 | 2023-10-19 | 株式会社村田製作所 | 高周波モジュール、及び、通信装置 |
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