JP4103968B2 - 絶縁ゲイト型半導体装置 - Google Patents

絶縁ゲイト型半導体装置 Download PDF

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Publication number
JP4103968B2
JP4103968B2 JP26921596A JP26921596A JP4103968B2 JP 4103968 B2 JP4103968 B2 JP 4103968B2 JP 26921596 A JP26921596 A JP 26921596A JP 26921596 A JP26921596 A JP 26921596A JP 4103968 B2 JP4103968 B2 JP 4103968B2
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Japan
Prior art keywords
region
impurity
channel formation
semiconductor device
channel
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Expired - Fee Related
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JP26921596A
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English (en)
Japanese (ja)
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JPH1093100A5 (enExample
JPH1093100A (ja
Inventor
舜平 山崎
久 大谷
潤 小山
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP26921596A priority Critical patent/JP4103968B2/ja
Priority to TW086113392A priority patent/TW353773B/zh
Priority to US08/931,697 priority patent/US6127702A/en
Priority to KR1019970047503A priority patent/KR100444654B1/ko
Publication of JPH1093100A publication Critical patent/JPH1093100A/ja
Priority to US09/635,832 priority patent/US7339235B1/en
Publication of JPH1093100A5 publication Critical patent/JPH1093100A5/ja
Application granted granted Critical
Publication of JP4103968B2 publication Critical patent/JP4103968B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP26921596A 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置 Expired - Fee Related JP4103968B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP26921596A JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置
TW086113392A TW353773B (en) 1996-09-18 1997-09-15 Semiconductor device and manufacturing method
US08/931,697 US6127702A (en) 1996-09-18 1997-09-16 Semiconductor device having an SOI structure and manufacturing method therefor
KR1019970047503A KR100444654B1 (ko) 1996-09-18 1997-09-18 반도체장치및그의제조방법
US09/635,832 US7339235B1 (en) 1996-09-18 2000-08-09 Semiconductor device having SOI structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26921596A JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007275917A Division JP4499774B2 (ja) 2007-10-24 2007-10-24 絶縁ゲイト型半導体装置

Publications (3)

Publication Number Publication Date
JPH1093100A JPH1093100A (ja) 1998-04-10
JPH1093100A5 JPH1093100A5 (enExample) 2004-11-11
JP4103968B2 true JP4103968B2 (ja) 2008-06-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP26921596A Expired - Fee Related JP4103968B2 (ja) 1996-09-18 1996-09-18 絶縁ゲイト型半導体装置

Country Status (4)

Country Link
US (2) US6127702A (enExample)
JP (1) JP4103968B2 (enExample)
KR (1) KR100444654B1 (enExample)
TW (1) TW353773B (enExample)

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