JP5902917B2 - 半導体基板の作製方法 - Google Patents
半導体基板の作製方法 Download PDFInfo
- Publication number
- JP5902917B2 JP5902917B2 JP2011244073A JP2011244073A JP5902917B2 JP 5902917 B2 JP5902917 B2 JP 5902917B2 JP 2011244073 A JP2011244073 A JP 2011244073A JP 2011244073 A JP2011244073 A JP 2011244073A JP 5902917 B2 JP5902917 B2 JP 5902917B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- layer
- semiconductor layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Description
本実施の形態では、半導体基板の構造及び作製方法の一形態について説明する。
本実施の形態では、実施の形態1とは異なる方法で、支持基板に転載された半導体層の端部における浮き及び剥がれを低減する方法について、図6を用いて説明する。
本実施の形態では、実施の形態1と異なる半導体基板の構造及び作製方法の一形態について、図7を用いて説明する。
本実施の形態では、半導体装置の作製方法の一形態について、図8及び図9を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態3に示す半導体基板を用いたトランジスタまたはダイオードを使用して、半導体装置を作製することができる。半導体装置の代表例としては、液晶表示装置、有機発光表示装置、無機発光表示装置、記憶装置、光電変換装置等がある。ここでは、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い、新たな構造の記憶装置の一形態を示す。
Claims (1)
- 酸化絶縁層で一表面が覆われ、且つ内部に脆化領域を有する半導体基板と、支持基板とを、前記酸化絶縁層を介して貼り合わせた後、前記脆化領域において前記半導体基板を分断して、前記酸化絶縁層を介して前記支持基板上に半導体層を設け、
前記半導体層の端部に第1のレーザ光を照射して、前記半導体層の一部に多結晶半導体領域を形成し、
前記端部に第1のレーザ光が照射された半導体層の表面の自然酸化層を除去した後、前記端部に第1のレーザ光が照射された半導体層に第2のレーザ光を照射する半導体基板の作製方法であって、
前記第1のレーザ光は、前記半導体層を完全溶融させ、
前記第2のレーザ光は、前記半導体層を部分溶融させることを特徴とする半導体基板の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011244073A JP5902917B2 (ja) | 2010-11-12 | 2011-11-08 | 半導体基板の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010254168 | 2010-11-12 | ||
JP2010254168 | 2010-11-12 | ||
JP2011244073A JP5902917B2 (ja) | 2010-11-12 | 2011-11-08 | 半導体基板の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012119669A JP2012119669A (ja) | 2012-06-21 |
JP2012119669A5 JP2012119669A5 (ja) | 2014-10-02 |
JP5902917B2 true JP5902917B2 (ja) | 2016-04-13 |
Family
ID=46048157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011244073A Expired - Fee Related JP5902917B2 (ja) | 2010-11-12 | 2011-11-08 | 半導体基板の作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8530336B2 (ja) |
JP (1) | JP5902917B2 (ja) |
KR (1) | KR20120051587A (ja) |
TW (1) | TWI500118B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6345544B2 (ja) * | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE102016224978B4 (de) | 2016-12-14 | 2022-12-29 | Disco Corporation | Substratbearbeitungsverfahren |
DE102017200631B4 (de) * | 2017-01-17 | 2022-12-29 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
JP6984978B2 (ja) * | 2018-02-09 | 2021-12-22 | 矢崎総業株式会社 | レーザ加工方法及びレーザ加工装置 |
WO2020202976A1 (ja) * | 2019-04-05 | 2020-10-08 | 東京エレクトロン株式会社 | レーザー加工装置、基板処理システム、レーザー加工方法、および基板処理方法 |
CN110828486B (zh) * | 2019-11-19 | 2023-05-12 | 云谷(固安)科技有限公司 | 显示面板的制作方法和显示面板 |
KR102254339B1 (ko) * | 2021-02-03 | 2021-05-21 | 주식회사 21세기 | 펨토초 펄스 레이저를 이용한 플래닝-폴리싱 장치 및 방법 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP4103968B2 (ja) | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
JPH10284431A (ja) | 1997-04-11 | 1998-10-23 | Sharp Corp | Soi基板の製造方法 |
US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
US6388652B1 (en) | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
US20010053559A1 (en) | 2000-01-25 | 2001-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating display device |
FR2894990B1 (fr) | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
JP2003151904A (ja) * | 2001-11-14 | 2003-05-23 | Fujitsu Ltd | 半導体薄膜の結晶化方法、半導体薄膜、及び、薄膜半導体装置 |
US7119365B2 (en) | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
JP4289837B2 (ja) | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びsoiウエハの製造方法 |
JP4328067B2 (ja) | 2002-07-31 | 2009-09-09 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びsoiウエハの製造方法、並びにイオン注入装置 |
JP5110772B2 (ja) | 2004-02-03 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜層を有する基板の製造方法 |
US7410882B2 (en) | 2004-09-28 | 2008-08-12 | Palo Alto Research Center Incorporated | Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates |
US7148124B1 (en) | 2004-11-18 | 2006-12-12 | Alexander Yuri Usenko | Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers |
JP2007281316A (ja) | 2006-04-11 | 2007-10-25 | Sumco Corp | Simoxウェーハの製造方法 |
US7579654B2 (en) | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
US20070281440A1 (en) | 2006-05-31 | 2007-12-06 | Jeffrey Scott Cites | Producing SOI structure using ion shower |
FR2912839B1 (fr) * | 2007-02-16 | 2009-05-15 | Soitec Silicon On Insulator | Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud |
KR101440930B1 (ko) | 2007-04-20 | 2014-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Soi 기판의 제작방법 |
EP1993127B1 (en) | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
US7745268B2 (en) | 2007-06-01 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere |
KR101484296B1 (ko) | 2007-06-26 | 2015-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 제작방법 |
JP5442224B2 (ja) | 2007-07-23 | 2014-03-12 | 株式会社半導体エネルギー研究所 | Soi基板の製造方法 |
JP5527956B2 (ja) | 2007-10-10 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
JP5490393B2 (ja) | 2007-10-10 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体基板の製造方法 |
JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP5317712B2 (ja) * | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
SG160302A1 (en) * | 2008-09-29 | 2010-04-29 | Semiconductor Energy Lab | Method for manufacturing semiconductor substrate |
US8871610B2 (en) | 2008-10-02 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
JP5618521B2 (ja) * | 2008-11-28 | 2014-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2010147313A (ja) * | 2008-12-19 | 2010-07-01 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法 |
JP2010177662A (ja) | 2009-01-05 | 2010-08-12 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法及び半導体装置の作製方法 |
KR20130029110A (ko) * | 2010-06-30 | 2013-03-21 | 코닝 인코포레이티드 | 절연체 기판상의 실리콘 마감을 위한 방법 |
-
2011
- 2011-11-08 TW TW100140716A patent/TWI500118B/zh not_active IP Right Cessation
- 2011-11-08 JP JP2011244073A patent/JP5902917B2/ja not_active Expired - Fee Related
- 2011-11-09 US US13/292,190 patent/US8530336B2/en not_active Expired - Fee Related
- 2011-11-10 KR KR1020110116841A patent/KR20120051587A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
TW201234539A (en) | 2012-08-16 |
US8530336B2 (en) | 2013-09-10 |
JP2012119669A (ja) | 2012-06-21 |
US20120122298A1 (en) | 2012-05-17 |
TWI500118B (zh) | 2015-09-11 |
KR20120051587A (ko) | 2012-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5902917B2 (ja) | 半導体基板の作製方法 | |
JP2022141651A (ja) | 表示装置 | |
TWI470732B (zh) | 半導體裝置及其製造方法 | |
KR101558192B1 (ko) | 반도체 기판의 제작 방법 및 반도체 장치의 제작 방법 | |
TWI450337B (zh) | 半導體裝置的製造方法 | |
US8324086B2 (en) | Method for manufacturing a semiconductor substrate by laser irradiation | |
JP5613397B2 (ja) | Soi基板の作製方法 | |
TWI525791B (zh) | 半導體裝置及其製造方法 | |
CN100401463C (zh) | 束照射装置、束照射方法及薄膜晶体管的制造方法 | |
JP5331381B2 (ja) | 半導体装置の作製方法 | |
JP2005252244A (ja) | 半導体基板の製造方法 | |
JP2010109361A (ja) | 半導体基板の作製方法及び半導体装置 | |
JP2009004756A (ja) | 半導体装置の作製方法 | |
JP2010114431A (ja) | Soi基板の作製方法 | |
JP2011077505A (ja) | Soi基板の作製方法及び半導体装置の作製方法 | |
JP5583916B2 (ja) | 半導体基板の作製方法及び半導体装置の作製方法 | |
US20090179160A1 (en) | Semiconductor substrate manufacturing apparatus | |
KR20100036208A (ko) | 반도체 장치의 제작 방법 | |
JP4566503B2 (ja) | レーザー処理装置並びに半導体装置の作製方法 | |
JP2010177662A (ja) | Soi基板の作製方法及び半導体装置の作製方法 | |
JP5284669B2 (ja) | 半導体装置の作製方法 | |
JP2010141246A (ja) | 半導体装置の製造方法 | |
JP5580010B2 (ja) | 半導体装置の作製方法 | |
JP5414203B2 (ja) | 半導体装置の作製方法 | |
JP5841725B2 (ja) | Soi基板の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140819 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140819 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150910 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150915 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160301 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160311 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5902917 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |