CN104081513A - 衬底保持器的辐射屏蔽件 - Google Patents

衬底保持器的辐射屏蔽件 Download PDF

Info

Publication number
CN104081513A
CN104081513A CN201280057542.1A CN201280057542A CN104081513A CN 104081513 A CN104081513 A CN 104081513A CN 201280057542 A CN201280057542 A CN 201280057542A CN 104081513 A CN104081513 A CN 104081513A
Authority
CN
China
Prior art keywords
substrate
shielding part
area
substrate support
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201280057542.1A
Other languages
English (en)
Other versions
CN104081513B (zh
Inventor
E·谢罗
M·哈平
J·温克勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Japan KK
Original Assignee
ASM Japan KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Japan KK filed Critical ASM Japan KK
Publication of CN104081513A publication Critical patent/CN104081513A/zh
Application granted granted Critical
Publication of CN104081513B publication Critical patent/CN104081513B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

一种反应腔室包括：定位在反应腔室内的衬底支承构件、具有第一区域和第二区域的反应腔室、定位在第二腔室内并可随衬底支承构件移动的屏蔽件，其中，屏蔽件邻近于衬底支承构件的至少底部表面。

Description

衬底保持器的辐射屏蔽件
相关申请的交互参照
本申请要求对2011年11月23日提交的美国专利临时申请No.61/563,428的优先权益，本文以参见方式引入其披露内容。
背景技术
在衬底处理工具中加热正在处理的衬底会是困难的。衬底加热中的变化可导致衬底内温度变化。如此的衬底内温度变化可导致衬底内处理的不均匀性。在某些设置中，呈现如此不均匀性的衬底可产生有缺陷的器件。此外，沉淀产物可沉淀在下部处理腔室中，导致反应腔室内温度降低，因此，为克服不充分的加热而增加了能耗。此外，沉淀产物在腔室内积聚可导致需要过早清洁腔室并增加成本。
发明内容
本发明的各方面涉及用于处理衬底的反应腔室。在一个方面，反应腔室包括定位在反应腔室内的衬底支承构件，反应腔室具有第一区域和第二区域、定位在第二区域内并可随衬底支承构件移动的屏蔽件，其中，屏蔽件邻近于衬底支承构件的至少底部表面。
在一种实施方式中，屏蔽件可邻近于衬底支承构件的侧壁。第一区域可以是衬底处理区域，而第二区域可以是衬底加载区域。第一区域可在反应腔室中定位在第二区域上方。反应腔室还可包括至少部分地分离第一和第二区域的隔离装置。反应腔室还可包括形成在屏蔽件和隔离装置之间的间隙。间隙可在5和10mm之间。屏蔽可与衬底支承构件间距的距离在5和20mm之间。
屏蔽件还可包括底部构件和侧壁构件。底部构件和侧壁构件可以近似为90度的角度彼此连接。底部构件和侧壁构件可彼此连接成近似为25和65度之间的角度。屏蔽件可固定到衬底支承构件的轴上。屏蔽件可保持住衬底支承构件所产生的热量。衬底支承构件还可包括加热器。
在另一方面，用于处理衬底的屏蔽件可包括具有包围衬底支承构件轴的孔的底部构件、向上延伸与底部构件交角的侧壁构件，其中，底部构件定位在衬底支承构件上方，而侧壁构件围绕衬底支承构件定位，且其中，屏蔽件随衬底支承构件垂直地移动。
在一种实施方式中，屏蔽件可与衬底支承构件间距开距离为5和20mm之间。屏蔽件的侧壁构件可避免与反应腔室壁接触。侧壁还可包括与反应腔室表面间距开的顶表面，间距距离近似在5和10mm之间。
在另一方面，反应腔室可包括第一区域、第二区域和第三区域，第一区域定位在第二区域和第三区域上方，并适于处理衬底，第二区域定位在第一区域下方并适于将衬底加载在反应腔室内，第三区域定位在第一区域和第二区域之间，且其中，第三区域可在第二区域内移动。
在一种实施方式中，反应腔室还可包括屏蔽件，该屏蔽件形成第二区域和第三区域之间的屏障。屏蔽件可在第二区域内移动。第三区域的体积根据衬底支承构件的位置变化。
在还有另一种方面，对处理区域内的衬底加热的方法包括：提供衬底支承构件下方的处理腔室内的屏蔽件，将衬底加载到处理腔室的处理区域内，致动一加热器，以及从屏蔽件辐射热量到衬底支承构件。
在一种实施方式中，该方法还可包括将衬底支承构件从加载位置移动到处理位置的步骤。该方法还可包括监控衬底支承构件和屏蔽件之间内腔温度的步骤。
以下在附图和详细描述中，对这里给出的本发明的各个方面和实施方式进行描述。除非有具体指出，本说明书和权利要求书中的词语，对于本技术领域内的技术人员来说都是平常、普通和惯常的含义。发明人完全知道，如果需要的话，则他们可以自己是辞典编纂者。发明人自己作为编纂者专门作出选择，除非发明人清楚地另有所述，然后进一步阐述该术语的“特殊”定义，并解释它如何不同于平淡和普通的含义，否则在说明书和权利要求书中只使用术语的平淡和普通的含义。没有如此清楚陈述的意图来应用“特殊”定义，正是发明人的意图和愿望，用术语的简单、平淡和普通的含义来诠释说明书和权利要求书。
发明人还知道英语语法的一般规则。因此，如果一个名词、术语或词语用来进一步表示特征、规定或某种方式的狭义化，则根据英语语法的一般规则，如此的名词、术语或词语将清楚地包括附加的形容词、描述性术语或其他修饰语。不使用如此的形容词、描述性术语或其他修饰语，对于本技术领域内技术人员，如上所述地，给予如此的名词、术语或词语以平淡的和普通的英语含义正是发明人的意图。
从详细描述和附图以及从权利要求书中，本技术领域内的技术人员将会明白上述的和其他的方面、特征和优点。
附图说明
下面将结合附图来描述本发明的实施例，其中，相同的附图标记表示相同的元件，以及：
图1示意地示出衬底处理腔室，其包括处于衬底加载位置中的根据本发明实施例的辐射屏蔽件。
图2示意地示出衬底处理腔室，其包括处于衬底加载位置中的根据本发明实施例的辐射屏蔽件。
图3示意地示出图1所示辐射屏蔽件一部分的仰视立体图。
图4示意地示出图1所示辐射屏蔽件的分解的立体图。
图5示意地示出图2中标以图5的区域的剖视图。
图6示意地示出图5中标以图6的区域的剖视图。
图7示意地示出图2中标以图5的区域的剖视图且移去了辐射屏蔽件。
图8示出不带辐射屏蔽件的用于承受器加热器组件的示例温度数据。
图9示出带有本发明辐射屏蔽件的用于承受器加热器组件的示例温度数据。
图10示出不带辐射屏蔽件的用于晶片衬底的示例温度数据。
图11示出带有辐射屏蔽件的用于晶片衬底的示例温度数据。
图12示意地示出本发明第二实施例的辐射屏蔽件的剖视图。
图13示出根据本发明实施例的处理衬底方法的流程图。
具体实施方式
某些衬底处理工具可包括各种环境，它们改变其中反射的入射辐照量。例如，各种材料、表面光洁度、表面涂层和/或环境几何可影响衬底处理工具内反射的热辐射，可能中衬底处理工具内正在处理的衬底内造成不均匀的温度场。
例如，由一个或多个电阻加热器加热的、承受器加热器组件支承的衬底，可通过向衬底处理工具内的低压环境热辐射而失去热量。如此的辐射损失可随着承受器加热器组件温度增加而增加。此外，因为承受器加热器组件和周围低压环境之间的区域在某些设置中可能是非均匀的，所以，衬底处理工具环境对辐射的捕获特性可影响来自承受器加热器组件的辐射损失。经受不均匀辐射捕获环境的衬底又会在衬底内形成非均匀的温度曲线。如文中使用的，辐射捕获是指物体或环境捕获热辐射的能力。因为某些衬底处理操作可依赖于温度，所以，如此的不均匀温度曲线可导致处理的衬底内的不均匀性。例如，由于非均匀性的温度，其可产生缺陷并可导致有缺陷的半导体器件，所以，经受薄膜沉淀过程的半导体衬底可呈现凸出的、凹入的或偏斜的薄膜厚度曲线。
某些减小衬底内温度场上周围辐射捕获环境效应的先前的方法，已经使用了定位在处理工具各部分内的固定的辐射屏蔽件。然而，如此固定的屏蔽件通常具有间隙，以允许衬底传送机械手在工具内移动衬底，或以其它方式提供不完全的和/或不一致的辐射捕获环境。在某些其他的情形中，如此的固定屏蔽件可不规则地形成，以在承受器加热器组件和固定屏蔽件之间有不均匀的观察因子。
因此，所披露的实施例涉及辐射屏蔽件，其定位成反射从用于支承和加热衬底处理腔室内衬底的承受器加热器组件射出的热辐射(包括一个或多个红外辐射的波长)和/或热量。例如，所披露的实施例提供辐射屏蔽件，用来移动衬底处理腔室内的承受器加热器组件的结构支撑着该辐射屏蔽件，于是，随着承受器加热器组件在衬底处理腔室内从第一位置移动到第二位置，辐射屏蔽件与承受器加热器组件一起移动。作为另一实例，所披露的实施例提供联接到承受器加热器组件的辐射屏蔽件，其中，辐射屏蔽件构造成反射由承受器加热器组件辐射到承受器加热器组件至少两个不同侧面的热辐射和/或热量。通过保持预定的辐射捕获环境(在某些实施例中，是均匀的辐射捕获环境)，如此的辐射屏蔽件可提高衬底内的温度均匀性。衬底内处理均匀性(例如，沉淀率、蚀刻率等)又可被提高，可能提高衬底处理腔室提供的和/或下游处理操作处的衬底沉淀膜质量。此外，在某些实例中，提高反射到承受器加热器组件的热辐射量和/或热量，可减小纳入在承受器加热器组件内加热器的功耗。因此，在某些实施例中，可实现增强的加热器控制和/或寿命。此外，还可实现腔室清洁频率的降低。
图1示意地示出衬底处理腔室100的实施例的剖视图，该衬底处理腔室100用来处理处于衬底加载/卸载位置中的半导体衬底。在某些实施例中，衬底处理腔室100可包含在何时的衬底处理工具内，衬底处理腔室100可通过任何合适的过程用来处理半导体衬底，例如，合适过程是薄膜沉淀、薄膜蚀刻等。尽管图1中所示的衬底处理腔室100实施例显示了单个腔室，但将会认识到，任何合适数量的过程腔室可被纳入到处理工具内，这样，衬底可在处理腔室之间传送，而不会暴露于环境条件下。例如，某些处理工具可包括就一个腔室，而其他的处理工具可包括两个或多个腔室。在这些实例中，每个反应腔室可包括仅一个单一区域或多个区域。尽管未在图1中示出，但在衬底处理之前、过程中和之后，可使用各种加载锁、加载端口和衬底传送操作机械手，使衬底在环境条件和衬底处理腔室100之间进行传递。
如图1和2所示，衬底处理腔室100包括上部反应器102，反应区域或处理区域103形成在该反应器102内，那里发生衬底的处理。衬底处理腔室100还包括带有衬底加载区域105的下部反应器104，那里可执行衬底的传输操作。图1还示出可移动的基架106，其用来在衬底处理腔室100内支承衬底。图1所示的实施例示出处于下部反应器104内的下降位置中的基架106。在某些设置中，基架106可被放置在下降的位置中，作为进出衬底处理腔室100的传输衬底107的一部分。
在图1所示的实施例中，下部反应器104包括衬底传输开口108，衬底通过该开口传输入和传输出衬底处理腔室100。在某些实施例中，门阀(未示出)可联接到衬底传输开口108，以使衬底处理腔室100可与半导体处理工具的其他部分隔离开，和/或衬底处理腔室100可向下泵送到低于环境压力的压力(例如，低压状态)。
在图1所示的实例中，基架106包括承受器加热器组件110，其用于支承衬底处理腔室100内的衬底。承受器加热器组件110包括加热器组件112，其在衬底处理之前、过程中和/或之后用来调整衬底温度。在某些实施例中，加热器组件112可包括电阻平板加热器。在图1所示的实施例中，加热器组件112包括基部114和衬底支承部分。在某些实施例中，基部114可包括一个或多个通道，其构造成保持一个或多个电阻加热元件116，加热元件116可定位在基部114内。在某些其他的实施例中，加热器组件112可以是单件的加热器、融合/焊接中一起的多件，或与衬底支承件分离的加热器。承受器加热器组件110安装在提升器118上，以使衬底可提升和下降。在某些实施例中，加热器组件112可以焊接到提升器118上。然而，可在反应腔室内使用任何合适的加热结构。
承受器加热器组件110显示在图1中，其包括构造成支承衬底107的选配衬底支承表面111。在某些实施例中，可省略衬底支承表面111，以使衬底107可被形成到加热器组件112内的衬底凹腔117支承。如图1所示，衬底凹腔117可形成到加热器组件112的衬底支承表面的上表面内，或替代地形成在衬底支承件或承受器的上表面内。在加热器组件112包括单件加热器的某些其他实施例中，衬底凹腔可形成到该单件加热器的上表面内，以使衬底107直接搁置在该单件加热器上。
图1还示出通过提升器118联接到承受器加热器组件110的辐射屏蔽件120。辐射屏蔽件120构造成将从承受器加热器组件110发出的至少一部分的热辐射反射返回承受器加热器组件110。在某些实施例中，辐射屏蔽件120可构造成反射由承受器加热器组件110发射到承受器加热器组件110的至少两个不同侧面的热辐射和/或热量。例如，图1示出适于将从承受器加热器组件110的底表面122和侧表面124发出的某些热辐射和/或热量反射回到承受器加热器组件110的辐射屏蔽件120。这可能减小加热器组件112的功耗，和/或减小衬底内温度的不均匀性，该温度不均匀性可因不均匀辐射捕获和/或靠近承受器加热器组件110的反射环境所造成。此外，在某些实施例中，辐射屏蔽件120可构造成使辐射屏蔽件120的表面将热辐射和/或热量反射到加热器组件112的至少两个不同侧面。例如，在图1所示的实施例中，辐射屏蔽件120图示为延伸超过加热器组件112，以使热辐射和/或热量反射到加热器组件112的侧面和/或底表面。尽管形成非均匀性可能是一种目标，但这同样的结构布置可用来放大非均匀性，因为在衬底处理过程中这可能是需要的。
在图1所示的实施例中，辐射屏蔽件120的形状和尺寸做成这样：辐射屏蔽件120通过间隙与承受器加热器组件110分开。间距开的辐射屏蔽件120和承受器加热器组件110可帮助在承受器加热器组件110周围保持均匀的辐射捕捉环境。应该认识到，辐射屏蔽件120与承受器加热器组件110分开的距离可根据处理条件(例如，承受器加热器组件温度、过程压力等)改变。例如，当压力增加时，热对流和/或热传导之类的传热过程可影响衬底内的温度场。在图2中可看到辐射屏蔽件120和承受器加热器组件110之间示例的间距的近景视图，该图示意地示出处于衬底处理腔室100内提升位置中的辐射屏蔽件120实施例。
例如，垂直间隙126a形成底表面122和辐射屏蔽件120之间的空间，而水平间隙126b形成侧表面124和辐射屏蔽件120之间的空间。在一种实施方式中，垂直间隙126a是在5和20mm之间，较佳地在10和20mm之间，而水平间隙126b是在5和15mm之间，较佳地在7和12mm之间。在一种实施方式中，垂直间隙126a近似为17.25mm，而水平间隙126b近似为9mm。然而，辐射屏蔽件120可定位在离底表面122和侧表面124任何合适的距离，这不脱离本发明的精神和范围。
在某些实施例中，如此的间隙可在可接受的允差内在辐射屏蔽件120和承受器加热器组件110之间形成恒定的分离。如此恒定的分离可对承受器加热器组件110提供均匀的辐射捕获和/或反射环境，可能在承受器加热器组件110和/或支承在其上的衬底107内导致均匀的温度曲线。例如，在圆形对称衬底被支承在圆形对称衬底加热器组件上的情形中，定位辐射屏蔽件以形成圆形对称辐射捕获和/或围绕承受器加热器组件的反射环境，这可在衬底内形成圆形对称的温度曲线。在离衬底中心的固定径向距离处测得的衬底温度又可以是与极角无关。
应该认识到，在某些实施例中，辐射屏蔽件120和承受器加热器组件110之间如此的分离间距可变化。例如，承受器加热器组件110和辐射屏蔽件120之间的分离可局部地改变，以使承受器加热器组件110和/或辐射屏蔽件120的辐射率变化量偏离，和/或适应各种配件、传感器和/或其他硬件特征。例如，图2示出形成到辐射屏蔽件120内的斜表面128，当承受器加热器组件110提升和下降时，该斜表面有助于形成下部反应器104内各种硬件配件的间隙。在某些实施例中，斜表面128和承受器加热器组件110之间的距离可小于形成垂直间隙126a和/或水平间隙126b的距离。
图2还示出辐射屏蔽件120和上部反应器102之间形成的空间202。在某些实施例中，该空间202的尺寸可确定为提供预选的从辐射屏蔽件120发出的热辐射的反射，同时，当基架处于提升位置中时，诸如是图2所示的衬底处理过程中，还通过空间202在上部反应器102和下部反应器104之间提供预定的气体流动传导率。因此，空间202的尺寸可确定为对承受器加热器组件110提供理想的辐射捕获和/或反射环境，不必将辐射屏蔽件120密封到上部反应器102。这可在衬底处理腔室100的其他部分中提供通过空间202的差动的泵送。然而，在某些实施例中，辐射屏蔽件120可构造成贴切地配合在上部反应器102上。在一个非限制的实例中，空间202可近似为5mm至10mm，且在一种实施方式中较佳地为8.25mm。具体来说，隔离装置206可与辐射屏蔽件120的外表面共平面地定位。屏蔽件120的外表面可包括侧壁208和底壁210，它们通过斜表面128连接。斜表面128可定位成某一角度，该角度在近似25和65度之间，或如下文中将要描述的，近似为90度角而没有斜表面。
参照图1，承受器加热器组件110显示为处于第一位置中，其中，承受器加热器组件110处于下部位置中，提升销延伸在承受器支承表面111的顶表面上方。该提升销布置成接纳提升销上的衬底107。移至图2，承受器加热器组件110沿与箭头204相关的方向向上延伸，直到承受器支承表面111在上部反应器102内并形成至少一部分的第一区域。第二区域由屏蔽件120的内表面形成，而第三区域由下部腔室104形成。在该结构布置中，第二区域可完全被包含在第三区域内，或仅部分地被包含在第三区域内。
在某些实施例中，辐射屏蔽件120可由提升器118支承，并由一个或多个保持结构保持住。在某些实施例中，如此的保持结构可包括合适的夹子。图3示意地示出处于提升位置中的基架106的实施例。
图3和4示出屏蔽件120和用于将屏蔽件固定到承受器加热器组件110的附连装置的实例。具体来说，屏蔽件120可包括中心孔212，该孔带有布置成帮助将屏蔽件固定到提升器118的平坦表面214。屏蔽件120还可包括多个孔216，以允许提升销通过其中。承受器加热器组件110还可包括突出部分218，其具有面向屏蔽件120的平坦接纳部分。对齐凸片220可在开槽或齿部分222上方位于提升器118上，开槽或齿部分222又位于凹陷部分224上方。
使用间隔件226来帮助屏蔽件120和承受器加热器组件110对齐。间隔件226可包括带有凹陷表面230的顶表面228。间隔件226可包括开口232和具有平坦表面236的对齐突出部234，两者都从间隔件的底表面238延伸。槽235可径向地定位在对齐突出部234内并布置成接纳释放销，这将在下文中讨论。最后，间隔件还可包括与提升器118的对齐凸片220协配的对齐孔240。因此，间隔件226在对齐孔240和对齐片220处与提升器118对齐，对齐片220又与对齐突出部234对齐。屏蔽件中心孔212和平坦表面214与对齐突出部234和间隔件226的平面236对齐，由此将承受器加热器组件110、间隔件226和辐射屏蔽件120定向以便合适地运作。
图3和4示出具有多个啮合突出部244的锁定夹242，啮合突出部244大致向内延伸且各具有一起形成内周界的啮合表面246，内周界略小于提升器118的外表面，具体来说是开槽部分222。锁定夹242还可包括多个释放片248，它们从锁定夹的外周界向外延伸。各个啮合突出部244可包括安装孔245，用于接纳释放销，这将在下文中详细讨论。
辐射屏蔽件120可具有任何合适的形状。例如，在某些实施例中，其中，承受器加热器组件110具有用于支承圆形衬底的圆形外形，辐射屏蔽件120可以是圆形的形状，以提供均匀的热辐射反射和/或吸收环境。然而，将会认识到，在某些实施例中，辐射屏蔽件120可具有其他合适的形状，诸如多边形，因为辐射屏蔽件120的形状可受传热考虑的影响以及几何形的影响。
辐射屏蔽件120可由任何合适材料形成。非限制性的实例包括铝、不锈钢和钛。此外，将会认识到，辐射屏蔽件120可以任何合适方式形成。在某些实施例中，辐射屏蔽件120可由金属旋压加工来形成。其他合适的加工技术包括铸造、冲压和车削加工。在某些实施例中，辐射屏蔽件120可包括合适的表面处理和/或表面光洁度加工，它们构造成改变形成辐射屏蔽件的材料的一个或多个辐射反射率特性。如此的处理和加工可构造成局部地(例如，在某些实例中，朝向承受器加热器组件110)或全部地反射热辐射。例如，辐射屏蔽件120可包括高度抛光的表面，在某些实施例中，抛光表面适于反射热辐射。附加地或替代地，在某些实施例中，辐射屏蔽件120可包括表面处理，其构造成反射一个或多个红外辐射的波长。此外，在某些实施例中，辐射屏蔽件120可用任何合适技术进行组装。例如，在某些实施例中，辐射屏蔽件的子组件可焊接在一起或可拆卸地连接在一起。
图5至7示出辐射屏蔽件120和特别地锁定夹242的安装和移去的各种操作视图。如图5所示，间隔件226沿着与箭头204相关的方向移动，直到对齐凸片220和对齐孔240彼此啮合为止，这样，间隔件226布置成接纳沿着与箭头204相关的方向向上移动的辐射屏蔽件120，直到屏蔽件中心孔212和平坦表面214与间隔件底表面238对齐并与其接触。接下来，锁定夹242也沿着提升器118向上移动，当锁定夹向上移动时，使啮合突出部244向下弯曲。具体来说，由于啮合突出部244的啮合表面246形成内周界，内周界的直径小于提升器118的外周界，所以，在提升器118和啮合突出部244之间有摩擦啮合，这需要通过锁定夹242的垂直运动基本上向上曳拉啮合突出部244。当锁定夹啮合突出部244和啮合表面246接触开槽部分222时，啮合突出部244配合在开槽部分222内，且只允许沿箭头204相关方向向上运动，由此，阻止锁定夹、屏蔽件和间隔件与承受器加热器组件110脱开锁定或分离。
现参照图6，该图是图5中标以图6的部分的放大的剖视图。如图中详细地所示，各释放凸片248间距开一间隙250，该间隙形成在释放凸片和屏蔽件120之间。安装表面252位于锁定夹242顶侧上，并接触屏蔽件120的底壁210，以将屏蔽件固定到间隔件并最后固定到承受器加热器组件110上。锁定夹242还可包括间隔壁254，其在释放凸片248和屏蔽件120的底壁210之间提供间隙250。有利地是，通过允许使用者将他/她手指或工具定位在间隙250内，该间隙250允许移去锁定夹242、屏蔽件120和间隔件226，这将在下文中作详细讨论。
图7示出正在用移去工具260来移去锁定夹242、屏蔽件120和间隔件226的情形，该移去工具260一般地包括具有第一端262a和第二端262b的释放销262，使第二端262b可移去地定位在安装孔245内，以沿与箭头306相关的方向偏置啮合突出部244。具体来说，第二端262b包括凹入区域264，其布置成配装在安装孔245内，需要时可延伸入槽235内。移去工具还包括具有带有螺纹孔274的突缘272的夹紧构件270，以及带有连接到间距构件276和相对突缘272的夹持臂278的多个间距构件276。夹持臂278的尺寸和形状最好适于配装在屏蔽件120和释放凸片248之间的间隙250内。在一种实施方式中，夹紧构件270布置成围绕释放凸片248沿着与箭头302相关的方向向上移动，然后转动而与释放凸片接触并定位在间隙250内。移去工具260还包括垫圈280，该垫圈280具有多个用于接纳螺栓290的螺纹孔282和孔284，这样，垫圈可围绕提升器轴118移动。
已经描述了所有的移去工具260的部件，现将描述其操作。释放销262定位在安装孔245内，如果必要的话，让凹陷区域264定位在槽235内。接下来，夹紧机构定位成让夹持臂278位于释放凸片248和屏蔽件120之间的间隙250内。垫圈280然后放置成与销260和特别是释销的第一端262a接触。螺栓290然后稳定地围绕垫圈的周界通过螺纹孔272和282固定，这样，通过螺栓290的转动运动以使得螺栓沿箭头300相关的方向位移，从而沿着与箭头302相关的方向向上曳拉垫圈280。垫圈280的向上运动形成释放销262的旋转运动，并赋予沿与箭头304相关方向的旋转运动。沿与箭头304相关的方向的旋转运动沿与箭头306相关方向在啮合突出部244上作用弯曲力。因此，作用在啮合突出部上的弯曲力306增大了内周界246，使得锁定夹242可沿着与箭头308相关的方向移动，并从提升器118移走。以同样的方式，屏蔽件120然后也可用间隔件226或不用间隔件226移走。尽管以上描述使用了某些顺序的操作和方向(向上或向下)，但可采用任何的操作顺序，如果移去操作是用承受器加热器组件110在工作台上执行，使指向上的提升器118倒过来，那么方向也可倒过来。此外，安装过程可要求类似的操作，仅是以反过来顺序进行而已。还应该指出的并应认识到的是，可使用多个其他的屏蔽件附连装置，这不会脱离本发明的精神和范围，只要屏蔽件连接到提升器，或其他合适的反应器部件上就可。
在某些设置中，类似于文中披露的那些辐射屏蔽件可能降低加热器的功耗，该加热器纳入在承受器内或甚至使承受器与加热器分离。例如，图8和9示出用于未加屏蔽件的承受器加热器组件的示例的温度数据(显示为数据702)，其与使用根据本发明实施例的辐射屏蔽件的承受器加热器组件的温度数据相比较(显示为数据704)。在图8和9所示的实例中，调整加热器功率，将承受器的温度(图8中显示为承受器温度设置706)控制到例如420℃的预选值。因此，承受器加热器组件的热损失可导致加热器的功耗和由此的加热器温度必然地增高。图8和9中所示的示例温度数据收集在受控的反应器内，各种压力设定点(图8中显示为反应器压力设定708)控制在1.5和5托之间。如图9所示，对应于未加屏蔽件的承受器加热器组件的加热器温度710，比屏蔽件的承受器加热器组件呈现的加热器温度(如图显示为加热器温度712)，在2Torr时近似高15℃，在5Torr时近似高22℃。因此，应该认识到，根据所披露实施例的辐射屏蔽件可减小加热器的功耗，其可提高加热器的寿命，或对同样的加热器温度提高最终的衬底温度，因为更多的热量从加热器引导到承受器加热器组件和衬底。
此外，在某些设置中，类似于文中披露的那些辐射屏蔽件实施例可能提高衬底内温度的均匀性。例如，图10和11示出用于未加屏蔽件的承受器加热器组件的示例的衬底温度均匀性数据(显示为数据802)，其与使用根据本发明实施例的承受器加热器组件的衬底温度均匀性数据相比较(显示为数据804)。在图10所示的实例中，调整加热器功率将承受器温度控制到420℃的预选值，同时，将反应器控制到1.5至5托之间的各种压力设定点。如图10所示，对应于未加屏蔽件的承受器加热器组件的平均衬底温度806比对应于屏蔽件的承受器加热器组件的平均温度808高大约1℃。此外，对应于未加屏蔽件的承受器加热器组件的衬底温度范围810比对应于屏蔽件的承受器加热器组件的衬底温度范围812高大约1℃。因此，在某些实例中，屏蔽承受器加热器组件可降低衬底内温度的不均匀性。这可能提高衬底处理质量，并还可提高下游衬底的处理质量。附录A还示出根据本发明的辐射屏蔽件的实施例以及与其相关的温度数据。
图12示出衬底支承组件400的另一实施例，其带有基架加热器402和分离的承受器404，让晶片406定位在承受器上。屏蔽件408的功能类似于屏蔽件120，并包括侧壁410和底壁412，它们彼此定位成近似90度。屏蔽件408可用夹子416固定到基架加热器的轴414上，夹子416有选择地定位在加热器轴的凹陷418内。因此，屏蔽件120和408的布置、操作和安装/移去彼此相类似，并提供如下类似的益处：增大的加热器控制、晶片热量分布控制、降低功耗以及腔室清洁的要求频度减小。
将会理解到，当在衬底处理腔室内处理衬底时，可使用文中所述的硬件。图13示出在衬底处理腔室内处理衬底的方法1300的实施例的流程图。方法1300可用任何合适的硬件和软件来实施。将会认识到，方法1300中所述过程的各部分可以省略、记录和/或补充，这不脱离本发明的范围。
在1302处，方法1300包括将衬底支承在承受器加热器组件上。在某些实施例中，在1304处，方法1300可包括将衬底支承在联接到辐射屏蔽件的承受器加热器组件上，辐射屏蔽件构造成将热辐射反射到承受器加热器组件的至少两侧。在1306处，方法1300包括将承受器加热器组件从第一位置移动到第二位置。在某些实施例中，在1308处，方法1300可包括移动承受器加热器组件，以使辐射屏蔽件随承受器加热器组件移动。在1310处，方法1300包括处理衬底。在1312处，方法1300包括将承受器加热器组件从第二位置移动到第一位置。
方法1300的实施例可由系统过程控制器来实施，该控制器包括数据保持子系统，该子系统包括由逻辑子系统执行的指令，以执行文中所述的过程。可使用任何合适的系统过程控制器，而不会脱离本发明的范围。
例如，可提供系统过程控制器(未特别地示出)来控制示例的衬底处理腔室100。系统过程控制器可操作过程模块控制子系统，诸如是气体控制子系统、压力控制子系统、温度控制子系统、电控子系统以及机械控制子系统。如此的控制子系统可接纳由传感器、中继器和控制器提供的各种信号，并作出合适的响应调整。
系统过程控制器包括计算机系统，其包括数据保持子系统和逻辑子系统。数据保持子系统可包括一个或多个物理的、永久的器件，该器件构造成保持数据，和/或由逻辑子系统执行的指令以实施文中所述方法和过程。逻辑子系统可包括一个或多个物理的器件，该器件构造成执行储存在数据保持子系统内的一个或多个指令。逻辑子系统可包括构造成执行软件指令的一个或多个处理器。
在某些实施例中，如此的指令可控制过程配方的执行。一般地说，过程配方包括用于处理衬底的过程参数顺序的描述，如此的参数包括时间、温度、压力和浓度等，以及在衬底处理过程中描述工具的电的、机械的和环境方面的各种参数。指令还可控制维护程序过程中所用的各种维护配方的执行等。在某些实施例中，如此指令可储存在可移去的计算机可读储存介质内，该储存介质可用来储存和/或传送可执行的数据和/或指令，以实施文中所述的方法和过程。将会认识到，可使用任何合适的可移去的计算机可读储存介质，而不会脱离本发明的范围。非限制性的实例包括DVD、CD-ROM、软盘和闪盘驱动器。
应该理解到，文中所述的构造和/或方法实质上是示范性的，这些具体的实施例或实例不应被认为是限制的意义，因为许多变化都是可能的。文中描述的特殊的程序或方法可代表任何处理策略中的一种或多种策略。因此，所示的各种动作可在所示的顺序中执行，在其他的顺序中执行，或在某些情形中可被省略。
本发明的主题包括各种过程、系统和构造和其他特征、功能、动作和/或文中所述的特性，以及任何它们的等价物和全部的等价物的所有新颖和非凡的组合和子组合。

Claims (25)

1.一种反应腔室包括：
定位在所述反应腔室内的衬底支承构件；
具有第一区域和第二区域的所述反应腔室；
定位在所述第二区域内并可随所述衬底支承构件移动的屏蔽件；以及
其中，所述屏蔽件邻近于所述衬底支承构件的至少底部表面。
2.如权利要求1所述的反应腔室，其特征在于，所述屏蔽件邻近于所述衬底支承构件的侧壁。
3.如权利要求1所述的反应腔室，其特征在于，所述第一区域是衬底处理区域，而所述第二区域是衬底加载区域。
4.如权利要求3所述的反应腔室，其特征在于，所述第一区域在所述反应腔室中定位在所述第二区域上方。
5.如权利要求1所述的反应腔室，其特征在于，还包括至少部分地分离所述第一和第二区域的隔离装置。
6.如权利要求5所述的反应腔室，其特征在于，还包括形成在所述屏蔽件和所述隔离装置之间的间隙。
7.如权利要求6所述的反应腔室，其特征在于，所述间隙在5至10mm之间。
8.如权利要求1所述的反应腔室，其特征在于，所述屏蔽件与所述衬底支承构件间距的距离在5至20mm之间。
9.如权利要求1所述的反应腔室，其特征在于，所述屏蔽件还包括底部构件和侧壁构件。
10.如权利要求9所述的反应腔室，其特征在于，所述底部构件和所述侧壁构件以近似为90度的角度彼此连接。
11.如权利要求9所述的反应腔室，其特征在于，所述底部构件和所述侧壁构件以近似为25至65度之间的角度彼此连接。
12.如权利要求1所述的反应腔室，其特征在于，所述屏蔽件固定到所述衬底支承构件的轴上。
13.如权利要求1所述的反应腔室，其特征在于，所述屏蔽件保持住所述衬底支承构件所产生的热量。
14.如权利要求1所述的反应腔室，其特征在于，所述衬底支承构件还包括加热器。
15.一种用于处理衬底的屏蔽件，包括：
具有包围所述衬底支承构件轴的孔的底部构件；
从所述底部构建成角度向上延伸的侧壁构件；
其中，所述底部构件定位在所述衬底支承构件上方，而所述侧壁构件围绕所述衬底支承构件定位；以及
其中，所述屏蔽件随所述衬底支承构件垂直地移动。
16.如权利要求15所述的用于处理衬底的屏蔽件，其特征在于，所述屏蔽件与所述衬底支承构件间距开距离为5至20mm之间。
17.如权利要求15所述的用于处理衬底的屏蔽件，其特征在于，所述屏蔽件的侧壁构件不接触反应腔室壁。
18.如权利要求15所述的用于处理衬底的屏蔽件，其特征在于，所述侧壁还包括与反应腔室表面间距开的顶表面，间距距离在5至10mm之间。
19.一种反应腔室，包括：
第一区域、第二区域和第三区域；
所述第一区域定位在所述第二区域和所述第三区域上方，并适于处理衬底；
所述第二区域定位在所述第一区域下方并适于将所述衬底加载在所述反应腔室内；
所述第三区域定位在所述第一区域和所述第二区域之间；以及
其中，所述第三区域在所述第二区域内移动。
20.如权利要求19所述的反应腔室，其特征在于，还包括屏蔽件，所述屏蔽件形成所述第二区域和所述第三区域之间的屏障。
21.如权利要求20所述的反应腔室，其特征在于，所述屏蔽件可在所述第二区域内移动。
22.如权利要求21所述的反应腔室，其特征在于，所述第三区域的体积根据所述衬底支承构件的位置变化。
23.一种对处理区域内的衬底加热的方法，包括：
在衬底支承构件下方的处理腔室内提供屏蔽件；
将所述衬底加载到所述处理腔室的处理区域内；
启动加热器；以及
从所述屏蔽件辐射热量到所述衬底支承构件。
24.如权利要求23所述的方法，其特征在于，还包括将所述衬底支承构件从加载位置移动到处理位置的步骤。
25.如权利要求23所述的方法，其特征在于，还包括监控所述衬底支承构件和所述屏蔽件之间内腔温度的步骤。
CN201280057542.1A 2011-11-23 2012-11-15 衬底保持器的辐射屏蔽件 Active CN104081513B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161563428P 2011-11-23 2011-11-23
US61/563,428 2011-11-23
PCT/US2012/065347 WO2013078066A1 (en) 2011-11-23 2012-11-15 Radiation shielding for a substrate holder

Publications (2)

Publication Number Publication Date
CN104081513A true CN104081513A (zh) 2014-10-01
CN104081513B CN104081513B (zh) 2017-04-19

Family

ID=47501409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280057542.1A Active CN104081513B (zh) 2011-11-23 2012-11-15 衬底保持器的辐射屏蔽件

Country Status (6)

Country Link
US (1) US9167625B2 (zh)
KR (1) KR102021163B1 (zh)
CN (1) CN104081513B (zh)
DE (1) DE112012004884T5 (zh)
TW (1) TWI555109B (zh)
WO (1) WO2013078066A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475610A (zh) * 2015-12-18 2018-08-31 应用材料公司 在非对称的腔室环境中的均匀晶片温度实现
CN109385624A (zh) * 2017-08-08 2019-02-26 Asm Ip控股有限公司 辐射屏障
CN109451743A (zh) * 2016-07-02 2019-03-08 应用材料公司 在空间ald处理腔室中用以增加沉积均匀性的装置
CN112144044A (zh) * 2020-09-21 2020-12-29 长江存储科技有限责任公司 薄膜制备装置、薄膜制备装置的控制方法与控制装置

Families Citing this family (381)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8986456B2 (en) * 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) * 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
DE102013009925A1 (de) * 2013-06-13 2014-12-18 Centrotherm Photovoltaics Ag Messobjekt, Verfahren zur Herstellung desselben und Vorrichtung zum thermischen Behandeln von Substraten
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
USD725168S1 (en) * 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
USD766850S1 (en) * 2014-03-28 2016-09-20 Tokyo Electron Limited Wafer holder for manufacturing semiconductor
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
USD795315S1 (en) * 2014-12-12 2017-08-22 Ebara Corporation Dresser disk
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
USD799646S1 (en) 2016-08-30 2017-10-10 Asm Ip Holding B.V. Heater block
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
WO2019033052A1 (en) * 2017-08-11 2019-02-14 Applied Materials, Inc. APPARATUS AND METHODS FOR IMPROVING CHEMICAL VAPOR PHASE (CVD) DEPOSITION UNIFORMITY
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN116732497A (zh) 2018-02-14 2023-09-12 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102709511B1 (ko) 2018-05-08 2024-09-24 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
TW202405221A (zh) 2018-06-27 2024-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) * 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
TWI756590B (zh) 2019-01-22 2022-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP7058239B2 (ja) * 2019-03-14 2022-04-21 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
KR102310036B1 (ko) * 2019-08-19 2021-10-07 주식회사 유진테크 기판 지지 조립체 및 기판 처리 장치
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11600470B2 (en) 2019-12-27 2023-03-07 Applied Materials, Inc. Targeted heat control systems
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
JP2021111783A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー チャネル付きリフトピン
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210093163A (ko) 2020-01-16 2021-07-27 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220059742A (ko) * 2020-11-03 2022-05-10 삼성전자주식회사 온도 조절 부재를 포함하는 반도체 공정 설비
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
USD998112S1 (en) * 2020-12-08 2023-09-05 Bromic Pty Limited Heater
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
TW202242184A (zh) 2020-12-22 2022-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US20230130756A1 (en) * 2021-10-22 2023-04-27 Applied Materials, Inc. Bottom cover plate to reduce wafer planar nonuniformity
US20240312807A1 (en) * 2023-03-17 2024-09-19 Applied Materials, Inc. Radiation separation system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US20040169032A1 (en) * 2003-02-27 2004-09-02 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US20070029642A1 (en) * 2005-08-02 2007-02-08 Applied Materials, Inc. Heating and cooling of substrate support
KR20080046436A (ko) * 2006-11-22 2008-05-27 삼성전자주식회사 베이크 장치
CN101689500A (zh) * 2007-09-12 2010-03-31 东京毅力科创株式会社 成膜装置和成膜方法
JP2010283212A (ja) * 2009-06-05 2010-12-16 Tokyo Electron Ltd 基板処理装置

Family Cites Families (408)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6429146B2 (en) 1999-09-02 2002-08-06 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
KR100803770B1 (ko) 2000-03-07 2008-02-15 에이에스엠 인터내셔널 엔.브이. 구배（ｇｒａｄｅｄ）박막
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
WO2002047142A1 (fr) 2000-12-05 2002-06-13 Tokyo Electron Limited Procede et appareil de traitement d'un article a traiter
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
EP1460678A4 (en) 2001-07-31 2010-01-06 Air Liquide CLEANING METHOD AND APPARATUS AND METHOD AND APPARATUS FOR ETCHING
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
JP4615859B2 (ja) 2001-10-26 2011-01-19 アプライド マテリアルズ インコーポレイテッド 原子層堆積のためのガス配送装置
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
CN101818334B (zh) 2002-01-17 2012-12-12 松德沃技术公司 Ald装置和方法
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
AU2003268000A1 (en) 2002-07-19 2004-02-09 Mykrolis Corporation Liquid flow controller and precision dispense apparatus and system
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP4585852B2 (ja) 2002-07-30 2010-11-24 エーエスエム アメリカ インコーポレイテッド 基板処理システム、基板処理方法及び昇華装置
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
KR20050035300A (ko) 2002-09-10 2005-04-15 에프 에스 아이 인터내셔날,인코포레이티드 뚜껑을 가진 열처리 장소
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
WO2004070816A1 (ja) 2003-02-06 2004-08-19 Tokyo Electron Limited プラズマ処理方法，半導体基板及びプラズマ処理装置
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
EP1623454A2 (en) 2003-05-09 2006-02-08 ASM America, Inc. Reactor surface passivation through chemical deactivation
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
US7238596B2 (en) 2003-06-13 2007-07-03 Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
KR20060054387A (ko) 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 증착 전 게르마늄 표면 처리 방법
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
CN100495655C (zh) 2003-09-03 2009-06-03 东京毅力科创株式会社 气体处理装置和散热方法
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
CN101914760B (zh) 2003-09-19 2012-08-29 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US7020981B2 (en) 2003-10-29 2006-04-04 Asm America, Inc Reaction system for growing a thin film
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
TWD110109S1 (zh) 2004-04-21 2006-04-11 東京威力科創股份有限公司 半導體製造用靜電夾盤吸附板
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
EP1771599B1 (en) 2004-07-30 2007-11-14 Lpe Spa Epitaxial reactor with susceptor controlled positioning
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
KR20070056154A (ko) 2004-10-19 2007-05-31 캐논 아네르바 가부시키가이샤 기판 지지·반송용 트레이
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
TWI553703B (zh) 2004-11-18 2016-10-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
ATE543925T1 (de) 2004-11-24 2012-02-15 Oerlikon Solar Ag VAKUUMBEHANDLUNGSKAMMER FÜR SEHR GROßFLÄCHIGE SUBSTRATE
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US8211230B2 (en) 2005-01-18 2012-07-03 Asm America, Inc. Reaction system for growing a thin film
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
JP4694878B2 (ja) * 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
JPWO2006129643A1 (ja) 2005-05-31 2009-01-08 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US8435905B2 (en) 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
US20070031598A1 (en) 2005-07-08 2007-02-08 Yoshikazu Okuyama Method for depositing silicon-containing films
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP5073751B2 (ja) 2006-10-10 2012-11-14 エーエスエム アメリカ インコーポレイテッド 前駆体送出システム
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
CN102007597B (zh) 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
TWD135511S1 (zh) 2008-10-03 2010-06-21 日本碍子股份有限公司 靜電夾頭
WO2010042410A2 (en) 2008-10-07 2010-04-15 Applied Materials, Inc. Apparatus for efficient removal of halogen residues from etched substrates
WO2010044978A1 (en) 2008-10-15 2010-04-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid group iv/iii-v semiconductor structures
KR20110084275A (ko) 2008-10-27 2011-07-21 어플라이드 머티어리얼스, 인코포레이티드 삼원 화합물의 기상 증착 방법
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
WO2010073578A1 (ja) * 2008-12-24 2010-07-01 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
WO2010090948A1 (en) 2009-02-04 2010-08-12 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9312154B2 (en) 2009-04-21 2016-04-12 Applied Materials, Inc. CVD apparatus for improved film thickness non-uniformity and particle performance
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US9449858B2 (en) * 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
WO2012061278A1 (en) 2010-11-05 2012-05-10 Synos Technology, Inc. Radical reactor with multiple plasma chambers
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
US20140020619A1 (en) 2011-03-31 2014-01-23 Benjamin Vincent Method for Growing a Monocrystalline Tin-Containing Semiconductor Material
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
KR101650416B1 (ko) 2011-12-23 2016-08-23 인텔 코포레이션 비평면 게이트 올어라운드 장치 및 그의 제조 방법
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
CN110592554A (zh) 2013-06-26 2019-12-20 应用材料公司 沉积金属合金膜的方法
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US20040169032A1 (en) * 2003-02-27 2004-09-02 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US20070029642A1 (en) * 2005-08-02 2007-02-08 Applied Materials, Inc. Heating and cooling of substrate support
KR20080046436A (ko) * 2006-11-22 2008-05-27 삼성전자주식회사 베이크 장치
CN101689500A (zh) * 2007-09-12 2010-03-31 东京毅力科创株式会社 成膜装置和成膜方法
JP2010283212A (ja) * 2009-06-05 2010-12-16 Tokyo Electron Ltd 基板処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475610A (zh) * 2015-12-18 2018-08-31 应用材料公司 在非对称的腔室环境中的均匀晶片温度实现
CN108475610B (zh) * 2015-12-18 2021-02-12 应用材料公司 在非对称的腔室环境中的均匀晶片温度实现
CN109451743A (zh) * 2016-07-02 2019-03-08 应用材料公司 在空间ald处理腔室中用以增加沉积均匀性的装置
CN109451743B (zh) * 2016-07-02 2021-06-22 应用材料公司 在空间ald处理腔室中用以增加沉积均匀性的装置
CN109385624A (zh) * 2017-08-08 2019-02-26 Asm Ip控股有限公司 辐射屏障
CN109385624B (zh) * 2017-08-08 2023-10-20 Asm Ip控股有限公司 辐射屏障
CN112144044A (zh) * 2020-09-21 2020-12-29 长江存储科技有限责任公司 薄膜制备装置、薄膜制备装置的控制方法与控制装置

Also Published As

Publication number Publication date
TWI555109B (zh) 2016-10-21
US20130126515A1 (en) 2013-05-23
KR20140098169A (ko) 2014-08-07
TW201338074A (zh) 2013-09-16
DE112012004884T5 (de) 2014-08-14
KR102021163B1 (ko) 2019-09-11
WO2013078066A1 (en) 2013-05-30
US9167625B2 (en) 2015-10-20
CN104081513B (zh) 2017-04-19

Similar Documents

Publication Publication Date Title
CN104081513A (zh) 衬底保持器的辐射屏蔽件
US10465986B2 (en) Heat treatment apparatus
TWI790239B (zh) 輻射屏蔽
JP6937403B2 (ja) 基板載置台
TWI579394B (zh) 用於基板之載具及組裝該載具之方法
KR102129844B1 (ko) 증착 챔버용 에지 링
US7525068B2 (en) Heating system of batch type reaction chamber and method thereof
US20110209660A1 (en) Methods and apparatus for deposition processes
TWI680490B (zh) 電漿處理裝置及上部電極總成
KR101549854B1 (ko) 기판 지지 부싱
US20200098559A1 (en) Cooled reflective adapter plate for a deposition chamber
JP2008522035A (ja) ガリウム−亜硝酸塩層をサファイア基板および基板ホルダの上に堆積させる方法及び装置
JP5477314B2 (ja) サセプタ及びこれを用いたエピタキシャルウェーハの製造方法
US20160053361A1 (en) Carrier for a substrate and method for carrying a substrate
CN105009263B (zh) 反射性衬里
US20140041579A1 (en) Deposition apparatus
JP2010171206A (ja) 加熱処理装置
JP2012043908A5 (zh)
US20070042118A1 (en) Encapsulated thermal processing
JP2010171206A5 (zh)
US20160237569A1 (en) Semiconductor manufacturing apparatus
WO2021034355A1 (en) Methods and apparatus for processing a substrate using microwave energy
JP2007201095A (ja) 基板処理装置
JP2010045198A (ja) 半導体装置の製造方法
KR102389078B1 (ko) 기판 처리장치에 구비되는 샤워헤드

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant