WO2011049620A2 - Heating plate with planar heater zones for semiconductor processing - Google Patents

Heating plate with planar heater zones for semiconductor processing Download PDF

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Publication number
WO2011049620A2
WO2011049620A2 PCT/US2010/002794 US2010002794W WO2011049620A2 WO 2011049620 A2 WO2011049620 A2 WO 2011049620A2 US 2010002794 W US2010002794 W US 2010002794W WO 2011049620 A2 WO2011049620 A2 WO 2011049620A2
Authority
WO
WIPO (PCT)
Prior art keywords
planar heater
heating plate
heater zones
power supply
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/002794
Other languages
English (en)
French (fr)
Other versions
WO2011049620A3 (en
Inventor
Harmeet Singh
Keith Gaff
Neil Benjamin
Keith Comendant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN201080051828.XA priority Critical patent/CN102668058B/zh
Priority to JP2012535190A priority patent/JP5836959B2/ja
Priority to KR1020167020062A priority patent/KR101919675B1/ko
Publication of WO2011049620A2 publication Critical patent/WO2011049620A2/en
Publication of WO2011049620A3 publication Critical patent/WO2011049620A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
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    • H10P14/6326—Deposition processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49083—Heater type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Definitions

  • Semiconductor substrate materials such as silicon substrates are processed by techniques which include the use of vacuum chambers. These techniques include non plasma applications such as electron beam deposition, as well as plasma applications, such as sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), resist strip, and plasma etch.
  • non plasma applications such as electron beam deposition, as well as plasma applications, such as sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), resist strip, and plasma etch.
  • PECVD plasma-enhanced chemical vapor deposition
  • Plasma processing systems available today are among those semiconductor fabrication tools which are subject to an increasing need for improved accuracy and repeatability.
  • One metric for plasma processing systems is increased uniformity, which includes uniformity of process results on a semiconductor substrate surface as well as uniformity of process results of a succession of substrates processed with nominally the same input parameters. Continuous improvement of on-substrate uniformity is desirable. Among other things, this calls for plasma chambers with improved uniformity, consistency and self diagnostics.
  • a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor plasma processing apparatus comprises at least a first electrically insulating layer, planar heater zones comprising at least first, second, third and fourth planar heater zones laterally distributed across the first electrically insulating layer, electrically conductive power supply lines comprising at least a first power supply line electrically connected to the first and second heater zones and a second power supply line electrically connected to the third and fourth heater zones, electrically conductive power return lines comprising at least a first power return line electrically connected to the first and third heater zones, and a second power return line electrically connected to the second and fourth heater zones.
  • FIG. 1 is a schematic of the cross-sectional view of a substrate support assembly in which a heating plate with an array of heater zones is incorporated, the substrate support assembly also comprising an electrostatic chuck (ESC).
  • ESC electrostatic chuck
  • Fig. 2 illustrates the topological connection between power supply and power return lines to an array of heater zones in one embodiment of a heating plate which can be incorporated in a substrate support assembly.
  • Fig. 3A shows an embodiment wherein the power supply lines and the heater zones are on the same plane.
  • Fig. 3B shows the power return lines on a plane separated from the plane in Fig. 3 A by an electrically insulating layer and the power return lines are connected to the heater zones through vias extending through the electrically insulating layer.
  • Fig. 3C is a schematic of the cross-sectional view of a substrate support assembly in which the heating plate of Fig. 3 A and 3B is incorporated.
  • Fig. 4A shows an embodiment wherein the power supply lines and the heater zones are on the same plane.
  • Fig. 4B shows a plane separated from the plane in Fig. 4A by an
  • the power supply lines are connected to leads in this plane through vias, and brought to a single hole in the cooling plate (not shown).
  • the power return lines on this plane are connected to the heater zones through vias extending between this plane and the plane in Fig. 4A.
  • the power return lines are also brought to a single hole in the cooling plate (not shown).
  • Fig. 5 A shows an embodiment wherein the heater zones are on a plane without the power supply lines or power return lines on that plane.
  • the heater zones are connected to power supply lines and power return lines on one or more different planes through vias.
  • Fig. 5B shows the power supply lines on a second plane separated from the plane in Fig. 5A by an electrically insulating layer.
  • the power supply lines are connected to the heater zones through vias extending between the two planes in Fig. 5A and 5B.
  • Fig. 5C shows the power return lines on a third plane separated from the planes in Fig. 5 A and 5B by another electrically insulating layer.
  • the power return lines are connected to the heater zones through vias extending between all three planes in Fig. 5A-C.
  • the leads connected to the power supply lines in Fig. 5B are also routed through feedthroughs in this plane.
  • Fig. 5D is a schematic of the cross-sectional view of a substrate support assembly in which the heating plate in Fig. 5A-C is incorporated.
  • Fig. 5E is a schematic of the cross-sectional view of a substrate support assembly in which an alternative heating plate in Fig. 5 A-C is incorporated.
  • FIG. 6 is a schematic of the cross-sectional view of a substrate support assembly in which a heating plate is incorporated, the substrate support assembly further including a primary heater layer above the array of heater zones, the primary heater located on an additional plane separated from all the planes in the heating plate by an electrically insulating layer.
  • Fig. 7A is a schematic of an exemplary plasma processing chamber, which can include a substrate support assembly with the heating plate described herein.
  • Fig. 7B is a schematic of an RF isolation approach.
  • Fig. 8 shows a block diagram of signal flow in one embodiment of the control electronics for the substrate support assembly.
  • a substrate support assembly may be configured for a variety of functions during processing, such as supporting the substrate, tuning the substrate temperature, and power supplying radio frequency power.
  • the substrate support assembly can comprise an electrostatic chuck (ESC) useful for electrostatically clamping a substrate onto the substrate support assembly during processing.
  • the ESC may be a tunable ESC (T-ESC).
  • T-ESC is described in commonly assigned U.S. Patent Nos. 6,847,014 and 6,921,724, which are hereby incorporated by reference.
  • the substrate support assembly may comprise a ceramic substrate holder, a fluid-cooled heat sink (hereafter referred to as cooling plate) and a plurality of concentric heater zones to realize step by step and radial temperature control.
  • the cooling plate is maintained between 0 °C and 30 °C.
  • the heaters are located on the cooling plate with a layer of thermal insulator in between.
  • the heaters can maintain the support surface of the substrate support assembly at temperatures about 0 °C to 80 °C above the cooling plate temperature.
  • the substrate support temperature profile can be changed between center hot, center cold, and uniform.
  • the mean substrate support temperature can be changed step by step within the operating range of 0 to 80 °C above the cooling plate temperature.
  • a small azimuthal temperature variation poses increasingly greater challenges as CD decreases with the advance of semiconductor technology.
  • Controlling temperature is not an easy task for several reasons. First, many factors can affect heat transfer, such as the locations of heat sources and heat sinks, the movement, materials and shapes of the media. Second, heat transfer is a dynamic process. Unless the system in question is in heat equilibrium, heat transfer will occur and the temperature profile and heat transfer will change with time.
  • the substrate temperature profile in a plasma processing apparatus is affected by many factors, such as the plasma density profile, the RF power profile and the detailed structure of the various heating the cooling elements in the chuck, hence the substrate temperature profile is often not uniform and difficult to control with a small number of heating or cooling elements. This deficiency translates to non-uniformity in the processing rate across the whole substrate and non-uniformity in the critical dimension of the device dies on the substrate.
  • a heating plate for a substrate support assembly in a semiconductor processing apparatus with multiple independently controllable heater zones comprises a scalable multiplexing layout scheme of the heater zones and the power supply and power return lines. By tuning the power of the heater zones, the temperature profile during processing can be shaped both radially and azimuthally.
  • this heating plate is primarily described for a plasma processing apparatus, this heating plate can also be used in other
  • the heater zones in this heating plate are preferably arranged in a defined pattern, for example, a rectangular grid, a hexagonal grid, a polar array, concentric rings or any desired pattern.
  • Each heater zone may be of any suitable size and may have one or more heater elements. All heater elements in a heater zone are turned on or off together.
  • power supply and power return lines are arranged such that each power supply line is connected to a different group of heater zones and each power return line is connected to a different group of heater zones with each heater zone being in one of the groups connected to a particular power supply line and one of the groups connected to a particular power return line. No two heater zones are connected to the same pair of power supply and power return lines.
  • a heater zone can be activated by directing electrical current through a pair of power supply and power return lines to which this particular heater zone is connected.
  • the power of the heater elements is preferably smaller than 20W, more preferably 5 to 10 W.
  • the heater elements may be resistive heaters, such as polyimide heaters, silicone rubber heaters, mica heaters, metal heaters (e.g. W, Ni/Cr alloy, Mo or Ta), ceramic heaters (e.g. WC), semiconductor heaters or carbon heaters.
  • the heater elements may be screen printed, wire wound or etched foil heaters.
  • each heater zone is not larger than four device dies being manufactured on a semiconductor substrate, or not larger than two device dies being manufactured on a semiconductor substrate, or not larger than one device die being manufactured on a semiconductor substrate, or between 2 and 3 cm 2 in area to correspond to the device dies on the substrate.
  • the thickness of the heater elements may range from 2 micrometers to 1 millimeter, preferably 5-80 micrometers.
  • the total area of the heater zones may be up to 90% of the area of the upper surface of the substrate support assembly, e.g. 50-90% of the area.
  • the power supply lines or the power return lines may be arranged in gaps ranging from 1 to 10 mm between the heater zones, or in separate planes separated from the heater zones plane by electrically insulating layers.
  • the power supply lines and the power return lines are preferably made as wide as the space allows, in order to carry large current and reduce Joule heating.
  • the width of the power lines is preferably between 0.3 mm and 2 mm.
  • the width of the power lines can be as large as the heater zones, e.g. for a 300 mm chuck, the width can be 1 to 2 inches.
  • the materials of the power supply and power return lines may be the same as or different from the materials of the heater elements.
  • the materials of the power supply and power return lines are materials with low resistivity, such as Cu, Al, W, Inconel ® or Mo.
  • Figs. 1-2 show a substrate support assembly comprising one embodiment of the heating plate having an array of heater zones 101 incorporated in two electrically insulating layers 104 A and 104B.
  • the electrically insulating layers may be a polymer material, an inorganic material, a ceramic such as silicon oxide, alumina, yttria, aluminum nitride or other suitable material.
  • the substrate support assembly further comprises (a) an ESC having a ceramic layer 103 (electrostatic clamping layer) in which an electrode 102 (e.g. monopolar or bipolar) is embedded to electrostatically clamp a substrate to the surface of the ceramic layer 103 with a DC voltage, (b) a thermal barrier layer 107, (c) a cooling plate 105 containing channels 106 for coolant flow.
  • each of the heater zones 101 is connected to one of the power supply lines 201 and one of the power return lines 202. No two heater zones 101 share the same pair of power supply 201 and power return 202 lines.
  • a rectifier 250 e.g. a diode
  • the rectifier can be physically located in the heating plate or any suitable location.
  • any current blocking arrangement such as solid state switches can be used to prevent crosstalk.
  • Figs. 3A, 3B and 3C show a substrate support assembly comprising an ESC, a cooling plate, and one embodiment of the heating plate wherein the heater zones 101 and power supply lines 201 are arranged in a first plane 302, and the power return lines 202 are arranged in a second plane 303 separated from the first plane 302 by an electrically insulating layer 304.
  • the power return lines 202 are connected to the heater zones 101 by conductive vias 301 in the electrically insulating layer 304, extending between the first plane 302 and the second plane 303.
  • the power supply lines 201 and power return lines 202 are connected to circuitry external to the heating plate through holes or conduits in the cooling plate. It should be appreciated that the presence of holes or conduits in the cooling plate can affect the temperature uniformity of substrate support assembly adversely, therefore reducing the number of holes or conduits in the cooling plate can enhance temperature uniformity. In addition, a small number of holes makes placing them around the edge of the substrate support assembly possible. For example, a single power supply conduit in the cooling plate can be used to feed electrical leads to the power supply lines 201. In one embodiment (Fig. 4 A and 4B), the heater zones 101 and power supply lines 201 are arranged in a first plane 402.
  • the power supply lines 201 are connected to leads 404 in a second plane 403 through conductive vias 301 extending between the first plane 402 and the second plane 403.
  • the second plane 403 is separated from the first plane 402 by an electrically insulating layer (not shown).
  • the power return lines 202 are arranged in the second plane 403 and are connected to the heater zones 101 through conductive vias 301 extending between the first plane 402 and the second plane 403.
  • the leads 404 are brought through a hole or conduit 401 in the cooling plate while maintaining electrical insulation between the leads.
  • the power return lines 202 are connected to leads 405 brought through a hole or conduit 406 in the cooling plate while maintaining electrical insulation between the leads 405.
  • Figs. 5A, 5B, 5C and 5D show a substrate support assembly comprising yet another embodiment of the heating plate, the heater zones 101 are arranged in a first plane 501; the power supply lines 201 are arranged in a second plane 502; and the power return lines 202 are arranged in a third plane 503.
  • the first plane 501, second plane 502 and third plane 503 are separated from each other by electrically insulating layers 504 and 304.
  • the power supply lines 201 and power return lines 202 are connected to the heater zones 101 through conductive vias 301 in the electrically insulating layers 304 and 504, extending between the planes 501, 502 and 503.
  • Electrodes (not shown) connected to the power supply lines 201 are routed through holes or conduits 505 in the layer 504.
  • the planes 501, 502 and 503 may be arranged in any order in the vertical direction, provided that the vias and conduits are suitably arranged.
  • the heaters are arranged closest to the substrate support assembly upper surface.
  • Fig. 5E shows an embodiment wherein each heater zone 101 is connected to the power return line 202 through a rectifier 506 (e.g. a diode).
  • the rectifier 506 only allows electric current flowing from the power supply line 201 through the heater zone 101 to the power return line 202, and thus prevents crosstalk between heater zones.
  • the substrate support assembly can comprise an additional electrically insulating layer 604 in which one or more additional heaters (hereafter referred to as primary heaters 601) are incorporated (Fig. 6).
  • the primary heaters 601 are individually controlled high-power heaters.
  • the power of the primary heaters is between 100 and 10000W, preferably, between 1000 and 5000W.
  • the primary heaters may be arranged as a rectangular grid, concentric annular zones, radial zone or combination of annular zones and radial zones.
  • the primary heaters may be used for changing the mean temperature, tuning the radial temperature profile, or step-by- step temperature control on the substrate.
  • the primary heaters may be located above or below the heater zones of the heating plate.
  • At least one of the insulating layers in the heating plate is a sheet of polymer material.
  • At least one of the insulating layers in the heating plate is a sheet of inorganic material such as ceramic or silicon oxide.
  • suitable insulating and conductive material for use in manufacture of ceramic chucks are disclosed in commonly assigned U.S. Patent No. 6483690, the disclosure of which is hereby incorporated by reference.
  • a substrate support assembly can comprise an embodiment of the heating plate, wherein each heater zone of the heating plate is of similar size to or smaller than a single device die or group of device dies on the substrate so that the substrate temperature, and consequently the plasma etching process, can be controlled for each device die position to maximize the yield of devices from the substrate.
  • the scalable architecture of the heating plate can readily accommodate the number of heater zones required for die-by-die substrate temperature control (typically more than 100 dies on a substrate of 300-mm diameter) with minimal number of power supply lines, power return lines, and feedthroughs in the cooling plate, thus reduces disturbance to the substrate temperature, the cost of manufacturing and complexity of the substrate support assembly.
  • the substrate support assembly can comprise features such as lift pins for lifting the substrate, helium back cooling, temperature sensors for providing temperature feedback signals, voltage and current sensors for providing heating power feedback signals, power feed for heaters and/or clamp electrode, and/or RF filters.
  • the insulating layers may be formed by depositing the ceramic on a suitable substrate using techniques such as plasma spraying, chemical vapor deposition or sputtering. This layer can be an initial starting layer or one of the insulating layers of the heating plate.
  • the insulating layers may be formed by pressing a mixture of ceramic powder, binder and liquid into sheets and drying the sheets (hereafter referred as green sheets).
  • the green sheets can be about 0.3 mm in thickness.
  • the vias may be formed in the green sheets by punching holes in the green sheets.
  • the holes are filled with a slurry of conducting powder.
  • the heater elements, power supply and power return lines may be formed by: screen printing a slurry of conducting powder (e.g. W, WC, doped SiC or MoSi 2 ), pressing a precut metal foil, spraying a slurry of conducting powder, or any other suitable technique.
  • Recesses for accommodating any rectifiers such as diodes may be pressed during the forming process of the green sheets or cut in the green sheets after the forming process. Discrete component rectifiers may be mounted into these recesses.
  • the insulating layers may be formed by pressing a mixture of ceramic powder, binder and liquid into green sheets and drying the green sheets.
  • the green sheets can be about 0.3 mm in thickness. Holes are punched in the green sheets for accommodating vias. Recesses for accommodating any rectifiers such as diodes may be pressed during the forming process of the green sheets or cut in the green sheets after the forming process. Then, individual green sheets are sintered. The holes in the sintered sheets for accommodating vias are filled with a slurry of conducting power.
  • the heater elements, power supply and power return lines may be screen printed with a slurry of conducting powder (e.g.
  • W, WC, doped SiC or MoSi 2 may be formed using any other suitable technique, on the sintered sheets.
  • Discrete component rectifiers may be mounted into the recesses in the sintered sheets. Multiple sintered sheets with a variety of components (lines, vias, rectifiers and heater elements) are then aligned and bonded with an adhesive to form an entire heating plate.
  • the insulating layers are silicon oxide sheets
  • the insulating layers may be formed by depositing a thin film silicon oxide onto a suitable substrate using techniques such as evaporation, sputtering, PVD, CVD, PECVD.
  • a thin metal sheet such as Al, Inconel ® or Cu foil
  • a first polymer film such as polyimide
  • a patterned resist film is applied to the surface of the component layer wherein the patterns define the shapes and positions of the electrical components such as heater elements, power supply lines or power return lines.
  • the exposed metal is chemically etched and the resist pattern is retained in the remaining metal sheet.
  • the resist is then removed by dissolution in a suitable solvent or dry stripping.
  • a second polymer film with holes for accommodating vias (via layer) is aligned and bonded to the first polymer film. The sidewalls of the holes may be coated by plating metal therein. Any suitable number of component layers and via layers may be incorporated serially.
  • exposed metal components are covered by a continuous polymer film for electrical insulation.
  • the heater elements, power supply and power return lines are made of metal films deposited (e.g. plasma sprayed, electroplated, chemical vapor deposition, or sputtered) on an insulating layer or substrate (e.g. a green sheet).
  • the heater elements, power supply and power return lines are made of a thin layer of amorphous conductive inorganic film such as indium tin oxide deposited (e.g. electroplated, chemical vapor deposition, or sputtered) on an insulating layer or substrate (e.g. a green sheet).
  • amorphous conductive inorganic film such as indium tin oxide deposited (e.g. electroplated, chemical vapor deposition, or sputtered) on an insulating layer or substrate (e.g. a green sheet).
  • the heater elements, power supply and power return lines are made of a thin layer of conductive ceramic film deposited (e.g. chemical vapor deposition, or sputtered) on an insulating layer or substrate (e.g. a green sheet).
  • the power supply and power return lines in the heating plate may be connected to the external circuitry by terminal connectors such as spring tipped passthroughs embedded in but electrically insulated from the cooling plate.
  • the power supply and power return lines in the heating plate may be connected to the external circuitry by attaching (soldered, bonded with conductive adhesive or spot welded) lead wires to the power supply and power return lines and threading these lead wires through holes or conduits in the cooling plate.
  • the RF power applied in the plasma processing chamber is usually above 100W, sometimes above 1000W.
  • the amplitude of RF voltages can exceed a kilovolt.
  • An RF filter can be used to shunt the RF power away from the control and power circuit.
  • An RF filter may be a simple broad-band filter or a tuned-filter for the specific RF frequencies used in the plasma processing system.
  • An RF isolator in contrast, eliminates direct electrical connection between any RF-coupled components and the control and power circuit.
  • An RF isolator may be an optical coupler or a transformer.
  • FIG. 7 A shows a schematic of a plasma processing chamber comprising a chamber 713 in which an upper showerhead electrode 703 and a substrate support assembly 704 are disposed.
  • a substrate 712 is loaded through a loading port 711 onto the substrate support assembly 704.
  • a gas line 709 supplies process gas to the upper showerhead electrode 703 which delivers the process gas into the chamber.
  • a gas source 708 e.g. a mass flow controller power supplying a suitable gas mixture
  • a RF power source 702 is connected to the upper showerhead electrode 703.
  • the chamber is evacuated by a vacuum pump 710 and the RF power is capacitively coupled between the upper showerhead electrode 703 and a lower electrode in the substrate support assembly 704 to energize the process gas into a plasma in the space between the substrate 712 and the upper showerhead electrode 703.
  • the plasma can be used to etch device die features into layers on the substrate 712.
  • the substrate support assembly 704 may have heaters incorporated therein. It should be appreciated that while the detailed design of the plasma processing chamber may vary, RF power is coupled through the substrate support assembly 704.
  • Fig. 7B shows a schematic of an embodiment of RF filtration or isolation, wherein no filters or isolators are connected on the heater zone power supply and power return lines and the control and power circuit 705 is connected to a filter or isolator 706B, which is connected to the electric ground 701.
  • the primary heaters (not shown), if present in the substrate support assembly, preferably have separate filters or isolators due to their high power.
  • the control and power circuit 705 floats at the RF potential or "high side". This approach allows multiple heater zones to share only one filter or isolator.
  • All the high side circuitry can be housed inside a local floating Faraday cage immediately under the substrate support assembly base structure.
  • an isolation transformer is used as the single filter or isolator 706B to isolate the power and control circuitry 705 from the RF.
  • the control and power circuitry 705 of the heater zones should be capable of operating at relatively high frequency (25 to 250KHz) because the transformer strongly attenuates DC and low frequency transmission.
  • the control and power circuitry is referenced to a single floating potential (floating ground). This requires that the control and power circuitry connected to this isolation transformer must be subject to very similar RF exposure. If the RF potentials differ substantially between two groups of control and power circuits, significant RF current flows between these groups. In this scenario, each group must have its own filter or isolator, or there must be a filter or isolator between these groups.
  • the filter or isolator 706B may be physically located in the plasma processing chamber or any other suitable location.
  • a low side controller 809 may be a microcontroller unit (MCU) or a higher level device such as a computer (PC). Through an optical coupler 807, the low side controller communicates digitally to the high side MCU 805 which interacts with the heater zones 801, sensors 803, and any auxiliary circuits 802. If the high side MCU 805 has sufficient capability and local memory, any set-point and program may be preloaded into the high side MCU 805 before each run, thus eliminating the need of a real-time link to the low side controller 809. 804 represents one-way
  • the high side MCU supplies power to each heater zone power supply line sequentially. Only one power supply line is connected to a power supply at the same time. During the time when one power supply line is powered, the high side MCU may keep any or all power return lines connected to the floating reference for a portion of this duration. A heater zone is turned on when at least one of the power supply lines connected to this heater zone is connected to the power supply, and at least one of the power return lines connected to this heater zone is connected to the floating reference. The average power of a heater zone is directly proportional to the average duration it is turned on. Alternatively, during the time when one power supply line is powered, the high side MCU may keep any or all power return lines connected to the floating reference for this entire duration and regulate the power transmitted to each heater zone that is turned on.
  • heater zones in row number N are connected to a power supply line number N; heater zones in column number M are connected to a power return line number M.
  • the high side MCU may control heating such that each of the power supply lines is connected to the power supply for 100 ms, sequentially. For example, during the 100 ms of time when power supply line number 3 is connected to the power supply, the MCU is operable to connect power return lines number 7, 8, and 9 to the floating reference for 10, 50 and 100 ms, respectively, as directed by the particular heating requirement during this 100 ms.
  • the heater zone in row number 3 and column number 7 has a duty cycle of 1%; the heater zone in row number 3 and column number 8 has a duty cycle of 5%; the heater zone in row number 3 and column number 9 has a duty cycle of 10%.
  • the maximum peak power for each heater zone would be set to ten times the average maximum power desired.
  • the switching frequencies and the entire multiplexing scheme are preferably sufficiently rapid that each heater zone gets addressed frequently (at least lHz).
  • Additional loop control may be implemented using feedback data from one of more temperature sensors. Voltage and current sensors can also be implemented if desired. These sensors can be configured to measure parameters such as temperatures on different locations on the substrate and power of heater zones. These measured parameters are sent to the control and power circuit to be compared with set targets of these parameters so that the control and power circuit can adjust the power delivered to the heater zones accordingly in order to minimize the difference between the measured parameters and their set targets.
  • the substrate support assembly can include temperature sensors for monitoring substrate temperature, a power feed arrangement to power the ESC with desired clamping voltage, a lifting pin arrangement for raising and lowering a substrate, a heat transfer gas feed arrangement for supplying gas such as helium to the underside of the substrate, a temperature controlled liquid feed arrangement to supply heat transfer liquid to the cooling plate, a power feed arrangement to individually power primary heaters above or below the planar heater zones, a power feed arrangement to supply RF power at one or more frequencies to a lower electrode incorporated in the substrate support assembly, and the like.

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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  • Surface Heating Bodies (AREA)
PCT/US2010/002794 2009-10-21 2010-10-20 Heating plate with planar heater zones for semiconductor processing Ceased WO2011049620A2 (en)

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130094578A (ko) * 2012-02-16 2013-08-26 주식회사 미코 온도 가변형 정전척 및 이를 포함하는 기판 처리 장치
CN103578900A (zh) * 2012-08-06 2014-02-12 中微半导体设备(上海)有限公司 等离子体处理设备及其静电卡盘
JP2014075525A (ja) * 2012-10-05 2014-04-24 Ngk Spark Plug Co Ltd 積層発熱体、静電チャック、及びセラミックヒータ
JP2014112672A (ja) * 2012-11-30 2014-06-19 Lam Research Corporation 温度制御素子アレイを備えるｅｓｃ用の電力切替システム
JP2015509280A (ja) * 2011-09-21 2015-03-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体処理のための平面熱ゾーンを伴う熱板
JP2015517225A (ja) * 2012-04-24 2015-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高度なｒｆ及び温度の均一性を備えた静電チャック
CN104752130A (zh) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 等离子体处理装置及其静电卡盘
EP3187620A4 (en) * 2014-08-28 2018-03-28 Boe Technology Group Co. Ltd. Evaporation equipment and evaporation method
US10199246B2 (en) 2013-10-25 2019-02-05 Tokyo Electron Limited Temperature control mechanism, temperature control method and substrate processing apparatus
US10236193B2 (en) 2009-10-21 2019-03-19 Lam Research Corporation Substrate supports with multi-layer structure including independent operated heater zones
US10824193B2 (en) 2014-03-13 2020-11-03 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR20210089250A (ko) * 2011-09-16 2021-07-15 램 리써치 코포레이션 국부화된 자기장을 생성하는 기판 지지 어셈블리의 컴포넌트
KR102368832B1 (ko) 2021-07-08 2022-03-02 에이피티씨 주식회사 다중 가열 영역 구조의 정전 척
US11688590B2 (en) 2018-03-26 2023-06-27 Ngk Insulators, Ltd. Electrostatic-chuck heater
US12009244B2 (en) 2014-07-23 2024-06-11 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
US12243756B2 (en) 2014-02-07 2025-03-04 Applied Materials, Inc. Temperature controlled substrate support assembly
US12293933B2 (en) 2021-12-15 2025-05-06 Vm Inc. Electrostatic chuck with multiple heater zones

Families Citing this family (549)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
KR101031226B1 (ko) * 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
CN105428295B (zh) 2009-12-15 2020-08-11 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
US8791392B2 (en) * 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US11950726B2 (en) * 2010-11-02 2024-04-09 Ember Technologies, Inc. Drinkware container with active temperature control
US10010213B2 (en) * 2010-11-02 2018-07-03 Ember Technologies, Inc. Heated or cooled dishware and drinkware and food containers
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
JP5994772B2 (ja) * 2011-03-23 2016-09-21 住友大阪セメント株式会社 静電チャック装置
TWI544569B (zh) * 2011-04-27 2016-08-01 住友大阪水泥股份有限公司 靜電夾持裝置
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US8520360B2 (en) 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
TWI456688B (zh) * 2011-08-05 2014-10-11 Advanced Micro Fab Equip Inc 一種易於釋放晶片的靜電吸盤結構及方法
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
KR102006508B1 (ko) * 2011-08-17 2019-08-01 램 리써치 코포레이션 멀티플렉싱된 가열기 어레이의 온도를 모니터링하고 이를 제어하는 시스템 및 방법
AU2015203198B2 (en) * 2011-08-30 2017-03-09 Watlow Electric Manufacturing Company Thermal array system
AU2015203215C1 (en) * 2011-08-30 2016-09-15 Watlow Electric Manufacturing Company Thermal array system
AU2015203195B2 (en) * 2011-08-30 2017-04-13 Watlow Electric Manufacturing Company System and method for controlling a thermal array
KR101813635B1 (ko) * 2011-08-30 2017-12-29 와틀로 일렉트릭 매뉴팩츄어링 컴파니 열 어레이 제어 시스템 및 방법
AU2015203200B2 (en) * 2011-08-30 2016-06-02 Watlow Electric Manufacturing Company Thermal array system
AU2015203212C1 (en) * 2011-08-30 2017-07-06 Watlow Electric Manufacturing Company System and method for controlling a thermal array
US10883950B2 (en) * 2011-08-30 2021-01-05 Watlow Electric Manufacturing Company Multi-parallel sensor array system
US10163668B2 (en) * 2011-08-30 2018-12-25 Watlow Electric Manufacturing Company Thermal dynamic response sensing systems for heaters
US8624168B2 (en) * 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
CN103959900B (zh) 2011-09-29 2016-08-24 沃特洛电气制造公司 高动态温度控制系统
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9324589B2 (en) * 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
WO2013127589A1 (en) * 2012-02-29 2013-09-06 Asml Netherlands B.V. Electrostatic clamp
WO2013132804A1 (ja) * 2012-03-07 2013-09-12 日本特殊陶業株式会社 搬送装置およびセラミック部材
US8809747B2 (en) * 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
JP6359236B2 (ja) * 2012-05-07 2018-07-18 トーカロ株式会社 静電チャック
US9984866B2 (en) * 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
JP5793473B2 (ja) * 2012-07-20 2015-10-14 株式会社新川 ボンディング装置用ヒータ及びその冷却方法
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
CN103633003B (zh) * 2012-08-28 2016-12-21 中微半导体设备(上海)有限公司 一种静电卡盘
CN103681185B (zh) * 2012-08-30 2016-05-04 中微半导体设备(上海)有限公司 一种静电卡盘及等离子体处理装置
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
TW201448108A (zh) 2013-03-12 2014-12-16 應用材料股份有限公司 用於電漿處理腔室的多重區域加熱及冷卻靜電夾盤
US10332772B2 (en) 2013-03-13 2019-06-25 Applied Materials, Inc. Multi-zone heated ESC with independent edge zones
US9543183B2 (en) * 2013-04-01 2017-01-10 Fm Industries, Inc. Heated electrostatic chuck and semiconductor wafer heater and methods for manufacturing same
US20140356985A1 (en) * 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
DE102014202302B4 (de) * 2013-07-03 2015-02-19 Technische Universität Dresden Vorrichtung zum Beheizen von Vorformkörpern
KR102278077B1 (ko) * 2013-08-14 2021-07-16 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치 및 기판 처리 방법
TWI589178B (zh) * 2013-08-19 2017-06-21 友達光電股份有限公司 加熱器以及加熱方法
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9677177B2 (en) 2013-10-24 2017-06-13 Applied Materials, Inc. Substrate support with quadrants
TW201518538A (zh) 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件
US9420639B2 (en) 2013-11-11 2016-08-16 Applied Materials, Inc. Smart device fabrication via precision patterning
JP2015095409A (ja) * 2013-11-13 2015-05-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10460968B2 (en) 2013-12-02 2019-10-29 Applied Materials, Inc. Electrostatic chuck with variable pixelated magnetic field
US9518946B2 (en) 2013-12-04 2016-12-13 Watlow Electric Manufacturing Company Thermographic inspection system
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9716022B2 (en) 2013-12-17 2017-07-25 Lam Research Corporation Method of determining thermal stability of a substrate support assembly
US9101038B2 (en) * 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9520315B2 (en) 2013-12-31 2016-12-13 Applied Materials, Inc. Electrostatic chuck with internal flow adjustments for improved temperature distribution
US9435692B2 (en) 2014-02-05 2016-09-06 Lam Research Corporation Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
JP6527524B2 (ja) * 2014-02-07 2019-06-05 インテグリス・インコーポレーテッド 静電チャックおよびその作製方法
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9589853B2 (en) * 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
CN104934279B (zh) * 2014-03-17 2017-08-01 中微半导体设备(上海)有限公司 一种等离子体处理腔室及其基台的制造方法
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
CN104952682A (zh) * 2014-03-25 2015-09-30 中微半导体设备(上海)有限公司 一种等离子体处理腔室及其基台
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
WO2016003633A1 (en) 2014-07-02 2016-01-07 Applied Materials, Inc Apparatus, systems, and methods for temperature control of substrates using embedded fiber optics and epoxy optical diffusers
US9595464B2 (en) 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10431435B2 (en) * 2014-08-01 2019-10-01 Applied Materials, Inc. Wafer carrier with independent isolated heater zones
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) * 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102110267B1 (ko) * 2014-10-31 2020-05-14 와틀로 일렉트릭 매뉴팩츄어링 컴파니 히터를 위한 열적 동적 응답 감지 시스템
KR102233925B1 (ko) * 2014-11-20 2021-03-30 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
CN104503513A (zh) * 2014-12-11 2015-04-08 无锡市锡容电力电器有限公司 一种加热板智能控温加热系统
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
JP6530220B2 (ja) * 2015-03-30 2019-06-12 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法
CN107636817B (zh) 2015-05-22 2021-08-27 应用材料公司 方位可调整的多区域静电夹具
US10453775B1 (en) * 2015-06-10 2019-10-22 SA Photonics, Inc. Distributed thermoelectric cooling system
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US9864361B2 (en) 2015-06-22 2018-01-09 Lam Research Corporation Flexible temperature compensation systems and methods for substrate processing systems
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US9728430B2 (en) * 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960009B2 (en) 2015-07-17 2018-05-01 Lam Research Corporation Methods and systems for determining a fault in a gas heater channel
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
CN108028440A (zh) * 2015-07-31 2018-05-11 伊利诺斯工具制品有限公司 加热板
JP6653535B2 (ja) * 2015-08-07 2020-02-26 日本発條株式会社 ヒータユニット
CN107113921B (zh) 2015-08-20 2020-09-11 日本碍子株式会社 静电卡盘加热器
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10237916B2 (en) * 2015-09-30 2019-03-19 Tokyo Electron Limited Systems and methods for ESC temperature control
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US9826574B2 (en) * 2015-10-28 2017-11-21 Watlow Electric Manufacturing Company Integrated heater and sensor system
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
JP6256454B2 (ja) * 2015-11-30 2018-01-10 株式会社デンソー ヒータプレート、このヒータプレートを用いる熱流束センサの製造装置、このヒータプレートの製造方法、及び、このヒータプレートの製造装置
US9812342B2 (en) * 2015-12-08 2017-11-07 Watlow Electric Manufacturing Company Reduced wire count heater array block
US10690414B2 (en) * 2015-12-11 2020-06-23 Lam Research Corporation Multi-plane heater for semiconductor substrate support
CN106920768A (zh) * 2015-12-24 2017-07-04 中微半导体设备(上海)有限公司 多区主动矩阵温控系统和温控方法及其适用的静电吸盘和等离子处理装置
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
CN106935529B (zh) * 2015-12-31 2020-03-24 中微半导体设备(上海)股份有限公司 一种基片支撑台及其制造方法
CN106935468A (zh) * 2015-12-31 2017-07-07 中微半导体设备(上海)有限公司 一种半导体处理器及用于半导体处理器的多区控温加热器
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
JP6226092B2 (ja) * 2016-03-14 2017-11-08 Toto株式会社 静電チャック
KR102513443B1 (ko) 2016-03-15 2023-03-24 삼성전자주식회사 정전 척 및 그를 포함하는 기판 처리 장치
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
CN107303622A (zh) * 2016-04-20 2017-10-31 张跃 一种夹式钎焊装置及其使用方法
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10764966B2 (en) * 2016-05-10 2020-09-01 Lam Research Corporation Laminated heater with different heater trace materials
KR102329513B1 (ko) * 2016-05-10 2021-11-23 램 리써치 코포레이션 적층된 히터와 히터 전압 입력부들 사이의 연결부들
US10667379B2 (en) 2016-05-10 2020-05-26 Lam Research Corporation Connections between laminated heater and heater voltage inputs
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
JP6238097B1 (ja) * 2016-07-20 2017-11-29 Toto株式会社 静電チャック
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10685861B2 (en) 2016-08-26 2020-06-16 Applied Materials, Inc. Direct optical heating of substrates through optical guide
JP2018056333A (ja) * 2016-09-29 2018-04-05 日本発條株式会社 基板載置台、および基板載置台の作製方法
JP2018063974A (ja) 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
CN108075473B (zh) * 2016-11-07 2019-11-29 北京北方华创微电子装备有限公司 一种滤波电路、加热电路和半导体处理设备
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10892179B2 (en) * 2016-11-08 2021-01-12 Lam Research Corporation Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR101909190B1 (ko) * 2016-12-30 2018-12-10 세메스 주식회사 기판 온도 제어 장치 및 이를 포함하는 기판 처리 장치
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
JP6850137B2 (ja) * 2017-01-24 2021-03-31 日本特殊陶業株式会社 保持装置
US11631597B2 (en) * 2017-02-01 2023-04-18 Ngk Spark Plug Co., Ltd. Holding apparatus
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
JP6341457B1 (ja) * 2017-03-29 2018-06-13 Toto株式会社 静電チャック
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP6688763B2 (ja) * 2017-05-30 2020-04-28 東京エレクトロン株式会社 プラズマ処理方法
JP7158131B2 (ja) * 2017-05-30 2022-10-21 東京エレクトロン株式会社 ステージ及びプラズマ処理装置
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR102019790B1 (ko) * 2017-06-29 2019-09-09 주식회사 디아이티 층별 소재가 다른 다층 세라믹 기판 및 그의 제조 방법
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10636630B2 (en) 2017-07-27 2020-04-28 Applied Materials, Inc. Processing chamber and method with thermal control
US10626499B2 (en) * 2017-07-28 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition device structure
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN109425437B (zh) * 2017-09-01 2020-07-28 京元电子股份有限公司 浮动温度感应装置及使用该装置的半导体组件测试模块
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11236422B2 (en) * 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
US11083050B2 (en) 2017-11-21 2021-08-03 Watlow Electric Manufacturing Company Integrated heater and method of manufacture
JP7349439B2 (ja) * 2017-11-21 2023-09-22 ワトロー エレクトリック マニュファクチュアリング カンパニー 経路層を持つ複数領域ペデスタルヒーター
US10681778B2 (en) 2017-11-21 2020-06-09 Watlow Electric Manufacturing Company Integrated heater and method of manufacture
US10761041B2 (en) 2017-11-21 2020-09-01 Watlow Electric Manufacturing Company Multi-parallel sensor array system
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
US11062886B2 (en) * 2017-11-28 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for controlling wafer uniformity
US10460914B2 (en) 2017-11-30 2019-10-29 Lam Research Corporation Ferrite cage RF isolator for power circuitry
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
JP7145031B2 (ja) * 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
CN108203812B (zh) * 2018-01-25 2020-02-07 京东方科技集团股份有限公司 一种基板固定载具、蒸镀设备及蒸镀方法
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
CN111712910B (zh) 2018-02-16 2023-11-07 日本特殊陶业株式会社 保持装置
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
KR102709511B1 (ko) 2018-05-08 2024-09-24 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10844490B2 (en) * 2018-06-11 2020-11-24 Hermes-Epitek Corp. Vapor phase film deposition apparatus
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR20250134000A (ko) 2018-06-27 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
KR102788956B1 (ko) 2018-07-05 2025-03-28 램 리써치 코포레이션 기판 프로세싱 시스템에서 기판 지지부의 동적 온도 제어
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11177067B2 (en) 2018-07-25 2021-11-16 Lam Research Corporation Magnetic shielding for plasma sources
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200023988A (ko) 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
WO2020068546A2 (en) * 2018-09-24 2020-04-02 Lam Research Corporation Multiplexed high tcr based ampoule heaters
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
CN111155072B (zh) * 2018-11-08 2022-12-09 北京北方华创微电子装备有限公司 腔室用清洗装置及清洗方法、半导体处理设备
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
CN111211029B (zh) * 2018-11-21 2023-09-01 中微半导体设备(上海)股份有限公司 一种多区控温等离子反应器
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
TWI843772B (zh) * 2018-12-07 2024-06-01 美商蘭姆研究公司 用於具有多工加熱器陣列之靜電卡盤的長壽命延伸溫度範圍嵌入式二極體設計
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
CN111326388B (zh) * 2018-12-17 2023-02-28 中微半导体设备(上海)股份有限公司 一种用于基片支撑的加热装置以及等离子体处理器
CN111385915B (zh) * 2018-12-27 2022-04-26 中微半导体设备(上海)股份有限公司 等离子反应器及其加热装置
CN111385917B (zh) * 2018-12-29 2022-07-15 中微半导体设备(上海)股份有限公司 一种用于组装esc的多平面多路可调节温度的加热器
CN111383891B (zh) * 2018-12-29 2023-03-10 中微半导体设备(上海)股份有限公司 用于半导体处理设备的温度控制装置及其温度控制方法
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102782593B1 (ko) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR102762833B1 (ko) 2019-03-08 2025-02-04 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
US11562913B2 (en) * 2019-04-25 2023-01-24 Watlow Electric Manufacturing Company Multi-zone azimuthal heater
KR102929471B1 (ko) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR102929472B1 (ko) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR102918757B1 (ko) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
CN113993624B (zh) * 2019-06-21 2024-02-09 亚德诺半导体国际无限责任公司 热平台和制造热平台的方法
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR102911421B1 (ko) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646B (zh) 2019-07-10 2026-02-10 Asmip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR102955799B1 (ko) 2019-07-17 2026-04-21 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR102903090B1 (ko) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI851767B (zh) 2019-07-29 2024-08-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
KR20210015655A (ko) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
US12622218B2 (en) 2019-07-31 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR20210018761A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP7810514B2 (ja) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR102928101B1 (ko) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
CN112442674A (zh) 2019-09-03 2021-03-05 Asm Ip私人控股有限公司 用于沉积硫族化物膜的方法和设备以及包括膜的结构
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
US12428726B2 (en) 2019-10-08 2025-09-30 Asm Ip Holding B.V. Gas injection system and reactor system including same
KR102948143B1 (ko) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
JP2023500403A (ja) 2019-11-12 2023-01-05 エンバー テクノロジーズ， インコーポレイテッド アクティブ温度制御を備えた冷却器
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11196937B2 (en) 2019-11-25 2021-12-07 Qualcomm Incorporated High frame rate in high dynamic range processing
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN120998766A (zh) 2019-11-29 2025-11-21 Asm Ip私人控股有限公司 基板处理设备
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP7703317B2 (ja) 2019-12-17 2025-07-07 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法
KR102943768B1 (ko) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TWI901623B (zh) 2020-01-06 2025-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TWI871421B (zh) 2020-02-03 2025-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 包括釩或銦層的裝置、結構及其形成方法、系統
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (ko) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
JP7539236B2 (ja) * 2020-02-21 2024-08-23 東京エレクトロン株式会社 基板処理装置
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
TWI914330B (zh) 2020-03-04 2026-02-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、及對準夾具
US11784080B2 (en) * 2020-03-10 2023-10-10 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
CN111372336B (zh) * 2020-03-25 2021-10-26 广州智慧医疗科技有限公司 一种红外电热膜及其制备方法
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
US11335792B2 (en) * 2020-04-06 2022-05-17 Tokyo Electron Limited Semiconductor processing system with in-situ electrical bias and methods thereof
US12211907B2 (en) 2020-04-06 2025-01-28 Tokyo Electron Limited Semiconductor manufacturing platform with in-situ electrical bias and methods thereof
US11894240B2 (en) 2020-04-06 2024-02-06 Tokyo Electron Limited Semiconductor processing systems with in-situ electrical bias
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR102901748B1 (ko) 2020-04-21 2025-12-17 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 방법
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR102866804B1 (ko) 2020-04-24 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR102934380B1 (ko) 2020-04-24 2026-03-05 에이에스엠 아이피 홀딩 비.브이. 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법
KR20210132612A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 화합물들을 안정화하기 위한 방법들 및 장치
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
US11646213B2 (en) * 2020-05-04 2023-05-09 Applied Materials, Inc. Multi-zone platen temperature control
US11551951B2 (en) * 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TWI915365B (zh) 2020-05-15 2026-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TWI911214B (zh) 2020-05-19 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TWI873343B (zh) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI908816B (zh) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TWI896694B (zh) 2020-07-01 2025-09-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積方法、半導體結構、及沉積系統
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR102776505B1 (ko) 2020-07-09 2025-03-07 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
TWI864307B (zh) 2020-07-17 2024-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構、方法與系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
JP7446176B2 (ja) * 2020-07-31 2024-03-08 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US20230274954A1 (en) * 2020-08-10 2023-08-31 Lam Research Corporation Substrate supports with multilayer structure including coupled heater zones with local thermal control
JP7311469B2 (ja) * 2020-08-11 2023-07-19 Ckd株式会社 気化器
TW202605918A (zh) 2020-08-11 2026-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 閘極堆疊
KR102915124B1 (ko) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (zh) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TWI911265B (zh) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、及裝置結構
TWI904232B (zh) 2020-09-10 2025-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積間隙填充流體之方法及相關系統和裝置
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
CN114388427A (zh) 2020-10-06 2022-04-22 Asm Ip私人控股有限公司 用于在特征的侧壁上形成氮化硅的方法和系统
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
KR102855834B1 (ko) 2020-10-14 2025-09-04 에이에스엠 아이피 홀딩 비.브이. 단차형 구조 상에 재료를 증착하는 방법
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
CN114496692B (zh) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 加热组件、基片承载组件及其等离子体处理装置
CN114496693B (zh) * 2020-11-11 2025-09-09 中微半导体设备(上海)股份有限公司 多区加热装置、下电极组件、等离子处理装置及调温方法
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR102578703B1 (ko) 2020-11-24 2023-09-18 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치 및 온도 제어 방법
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
KR20220077875A (ko) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. 샤워헤드 어셈블리용 세정 고정구
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
US12159788B2 (en) 2020-12-14 2024-12-03 Asm Ip Holding B.V. Method of forming structures for threshold voltage control
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具有可旋轉台的晶圓處理設備
KR20220090438A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전이금속 증착 방법
KR20220090435A (ko) 2020-12-22 2022-06-29 에이에스엠 아이피 홀딩 비.브이. 전구체 캡슐, 용기 및 방법
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
US12317378B2 (en) 2021-02-04 2025-05-27 Applied Materials, Inc. Multi-zone heater control for wafer processing equipment
US11664193B2 (en) 2021-02-04 2023-05-30 Applied Materials, Inc. Temperature controlled/electrically biased wafer surround
KR102768789B1 (ko) 2021-02-04 2025-02-14 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 부재 및 그 제법
KR102695408B1 (ko) 2021-02-26 2024-08-16 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US12531217B2 (en) 2021-03-31 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Laser array system for improved local CD uniformity
US11960268B2 (en) 2021-05-04 2024-04-16 Hewlett Packard Enterprise Development Lp Power allocation to heat a processing chip of a network device
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
KR20220161198A (ko) * 2021-05-28 2022-12-06 매슨 테크놀로지 인크 플라즈마 처리 장치를 위한 정전 척 어셈블리
CN114975053B (zh) * 2021-05-28 2025-02-11 北京屹唐半导体科技股份有限公司 用于等离子体处理设备的静电吸盘组件
KR102872170B1 (ko) 2021-07-19 2025-10-15 삼성전자주식회사 반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법
KR102940415B1 (ko) * 2021-08-25 2026-03-18 세메스 주식회사 지지 유닛 및 기판 처리 장치
KR20230031569A (ko) * 2021-08-27 2023-03-07 세메스 주식회사 지지 유닛 및 기판 처리 장치
KR102655065B1 (ko) * 2021-08-31 2024-04-09 세메스 주식회사 히팅 부재 및 기판 처리 장치
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
CN115775762B (zh) * 2021-09-07 2026-05-05 维人股份有限公司 多个加热区域结构的静电卡盘
TWI796780B (zh) * 2021-09-07 2023-03-21 南韓商自適應等離子體技術公司 多個加熱區域結構的靜電卡盤
FR3127762B1 (fr) * 2021-10-05 2023-10-13 Safran Electronics & Defense Dispositif de chauffage d’un substrat pour dépôt sous vide
JP2023067767A (ja) * 2021-10-29 2023-05-16 東京エレクトロン株式会社 基板支持器、プラズマ処理装置及びプラズマ処理方法
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
KR102836505B1 (ko) * 2022-06-23 2025-07-22 주식회사 히타치하이테크 플라스마 처리 장치
KR102776629B1 (ko) 2022-09-16 2025-03-07 세메스 주식회사 기판 가열 장치와 이를 이용한 기판 처리 장치
US12581880B2 (en) 2022-11-02 2026-03-17 Applied Materials, Inc. Faraday faceplate
CN118366911A (zh) * 2023-01-19 2024-07-19 江苏鲁汶仪器股份有限公司 一种静电吸盘及半导体芯片加工设备
US20240312770A1 (en) * 2023-03-16 2024-09-19 Applied Materials, Inc. Apparatus and methods for controlling substrate temperature during processing
WO2024201683A1 (ja) * 2023-03-27 2024-10-03 株式会社日立ハイテク プラズマ処理装置
CN116403943A (zh) * 2023-04-21 2023-07-07 江苏微导纳米科技股份有限公司 一种加热盘及其制造方法、一种半导体设备
JP2025010796A (ja) * 2023-07-10 2025-01-23 株式会社日立ハイテク プラズマ処理装置
TWI911583B (zh) * 2023-10-20 2026-01-11 力晶積成電子製造股份有限公司 晶圓卡盤
WO2025171196A1 (en) * 2024-02-08 2025-08-14 Lam Research Corporation Designs for metallic straps connecting diodes and heaters embedded in electrostatic chucks
WO2026018496A1 (ja) * 2024-07-18 2026-01-22 日本碍子株式会社 溶射膜形成方法

Family Cites Families (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK111688B (da) 1965-01-13 1968-09-30 Burmeister & Wains Mot Mask Rørvæg til vandrørskedler og bestående af parallelle, i hovedsagen i samme plan liggende rør.
US3440883A (en) 1966-12-01 1969-04-29 Monsanto Co Electronic semiconductor thermometer
US3752956A (en) 1972-05-03 1973-08-14 Du Pont Electrical resistance heating control circuit
US3888106A (en) 1973-03-07 1975-06-10 Rockwell International Corp Testing apparatus for flow measuring devices
JPS5546346A (en) 1978-09-27 1980-04-01 Tokyo Electric Co Ltd Roaster
JPS601918B2 (ja) 1980-04-26 1985-01-18 ライオン株式会社 再汚染の少ない無燐洗剤組成物
JPS601918A (ja) 1983-06-17 1985-01-08 Fuji Electric Co Ltd マトリツクス形選択回路
JPS621176A (ja) 1985-06-26 1987-01-07 Hitachi Ltd ヘツド支持装置
JPS6298610A (ja) 1985-10-25 1987-05-08 Hitachi Ltd 結晶成長用基板加熱機構
JPH0610391B2 (ja) 1989-11-17 1994-02-09 株式会社ナブコ プラグドアのガイド装置
US5536918A (en) 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
FR2682253A1 (fr) 1991-10-07 1993-04-09 Commissariat Energie Atomique Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole.
US5255520A (en) 1991-12-20 1993-10-26 Refir Technologies Advanced thermoelectric heating and cooling system
JP3440475B2 (ja) 1992-06-29 2003-08-25 アイシン精機株式会社 人体局部洗浄装置
US5414245A (en) * 1992-08-03 1995-05-09 Hewlett-Packard Corporation Thermal-ink heater array using rectifying material
DE4231702C2 (de) 1992-09-22 1995-05-24 Litef Gmbh Thermoelektrische, beheizbare Kühlkammer
KR100290748B1 (ko) 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
JPH06326022A (ja) 1993-03-16 1994-11-25 Mitsubishi Electric Corp 半導体基板の製造方法，半導体装置の製造方法，及び，半導体製造装置
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
JPH0778668A (ja) 1993-09-07 1995-03-20 Fanuc Ltd ヒータ装置の異常検出装置
US5504471A (en) 1993-09-16 1996-04-02 Hewlett-Packard Company Passively-multiplexed resistor array
JP2647799B2 (ja) 1994-02-04 1997-08-27 日本碍子株式会社 セラミックスヒーター及びその製造方法
JPH08130184A (ja) 1994-10-31 1996-05-21 Sony Corp 熱処理装置
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5667622A (en) 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
JPH09213781A (ja) 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5740016A (en) 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
US5802856A (en) 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
US5702624A (en) 1996-10-09 1997-12-30 Taiwan Semiconductors Manfuacturing Company, Ltd Compete hot plate temperature control system for hot treatment
KR200159921Y1 (ko) 1996-11-23 1999-11-01 이세원 리프터의 업/다운 제어회로
US5994675A (en) 1997-03-07 1999-11-30 Semitool, Inc. Semiconductor processing furnace heating control system
JP3526184B2 (ja) 1997-03-17 2004-05-10 大日本スクリーン製造株式会社 基板処理装置
JPH11126743A (ja) * 1997-10-24 1999-05-11 Tokyo Electron Ltd 処理装置
CA2310583C (en) 1997-11-07 2004-12-28 Shell Oil Company Heater control
US6091060A (en) 1997-12-31 2000-07-18 Temptronic Corporation Power and control system for a workpiece chuck
US6222161B1 (en) 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
US6112697A (en) 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US5886866A (en) 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
JP3892609B2 (ja) 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
DE19907497C2 (de) 1999-02-22 2003-05-28 Steag Hamatech Ag Vorrichtung und Verfahren zur Wärmebehandlung von Substraten
US6469283B1 (en) * 1999-03-04 2002-10-22 Applied Materials, Inc. Method and apparatus for reducing thermal gradients within a substrate support
US6353209B1 (en) 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US6523493B1 (en) 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP2000332089A (ja) * 1999-05-18 2000-11-30 Toshiba Ceramics Co Ltd ウエハ加熱保持用静電チャック
US6100506A (en) 1999-07-26 2000-08-08 International Business Machines Corporation Hot plate with in situ surface temperature adjustment
JP2004303736A (ja) * 1999-08-09 2004-10-28 Ibiden Co Ltd セラミックヒータ
JP2001118662A (ja) 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
US6175175B1 (en) 1999-09-10 2001-01-16 The University Of Chicago Levitation pressure and friction losses in superconducting bearings
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
WO2001024581A1 (en) 1999-09-29 2001-04-05 Tokyo Electron Limited Multi-zone resistance heater
JP2001102157A (ja) 1999-10-01 2001-04-13 Ngk Insulators Ltd セラミックスヒータ
EP1199908A4 (en) 1999-10-22 2003-01-22 Ibiden Co Ltd CERAMIC HEATING ELEMENT
JP2001126743A (ja) 1999-10-26 2001-05-11 Matsushita Electric Ind Co Ltd 高分子電解質型燃料電池
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
EP1233651A1 (en) 2000-04-07 2002-08-21 Ibiden Co., Ltd. Ceramic heater
US6271459B1 (en) 2000-04-26 2001-08-07 Wafermasters, Inc. Heat management in wafer processing equipment using thermoelectric device
JP2002059579A (ja) * 2000-08-15 2002-02-26 Casio Comput Co Ltd 駆動回路
US6403403B1 (en) 2000-09-12 2002-06-11 The Aerospace Corporation Diode isolated thin film fuel cell array addressing method
JP3764639B2 (ja) 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
WO2002034451A1 (en) 2000-10-25 2002-05-02 Tokyo Electron Limited Method of and structure for controlling electrode temperature
DE10059665C1 (de) * 2000-12-01 2002-07-11 Steag Hamatech Ag Verfahren zum thermischen Behandeln von Substraten
US6501052B2 (en) 2000-12-22 2002-12-31 Chrysalis Technologies Incorporated Aerosol generator having multiple heating zones and methods of use thereof
AU2002240261A1 (en) 2001-03-02 2002-09-19 Tokyo Electron Limited Method and apparatus for active temperature control of susceptors
US6746616B1 (en) 2001-03-27 2004-06-08 Advanced Micro Devices, Inc. Method and apparatus for providing etch uniformity using zoned temperature control
US6741446B2 (en) 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
JP3582518B2 (ja) 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
JP4549022B2 (ja) 2001-04-30 2010-09-22 ラム リサーチ コーポレイション ワーク支持体の表面を横切る空間温度分布を制御する方法および装置
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
ITMI20011253A1 (it) 2001-06-14 2002-12-14 Whirlpool Co Sistema di gestione della potenza in apparecchi di cottura elettrici
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6483690B1 (en) 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
WO2003015157A1 (en) 2001-08-10 2003-02-20 Ibiden Co., Ltd. Ceramic joint body
US6693262B2 (en) 2001-10-17 2004-02-17 Whirlpool Corporation Cooking hob with discrete distributed heating elements
JP3897563B2 (ja) 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
US6739138B2 (en) 2001-11-26 2004-05-25 Innovations Inc. Thermoelectric modules and a heating and cooling apparatus incorporating same
JP3559549B2 (ja) * 2002-01-29 2004-09-02 京セラ株式会社 ウエハ加熱装置
US6921724B2 (en) 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6612673B1 (en) 2002-04-29 2003-09-02 Hewlett-Packard Development Company, L.P. System and method for predicting dynamic thermal conditions of an inkjet printing system
JP3808407B2 (ja) 2002-07-05 2006-08-09 住友大阪セメント株式会社 電極内蔵型サセプタ及びその製造方法
DE10397020B4 (de) 2002-07-11 2022-08-04 Temptronic Corp. Werkstück-Einspannvorrichtung mit Temperatursteuereinheit mit Abstandshaltern zwischen Schichten, die einen Zwischenraum für thermoelektrische Module schaffen und Verfahren zum Halten eines Werkstücks
US6825681B2 (en) * 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP2004101106A (ja) * 2002-09-11 2004-04-02 Mitsubishi Electric Corp 空気調和機の制御回路及び空気調和機の制御方法
JP3924524B2 (ja) 2002-10-29 2007-06-06 京セラ株式会社 ウエハ加熱装置およびその製造方法
US7347901B2 (en) * 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7372001B2 (en) 2002-12-17 2008-05-13 Nhk Spring Co., Ltd. Ceramics heater
US6979805B2 (en) 2003-01-08 2005-12-27 Hewlett-Packard Development Company, L.P. Fuel-cell resistors and methods
US6825617B2 (en) 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
US7230204B2 (en) 2003-03-28 2007-06-12 Tokyo Electron Limited Method and system for temperature control of a substrate
JP3988942B2 (ja) 2003-03-31 2007-10-10 株式会社国際電気セミコンダクターサービス ヒータ検査装置及びそれを搭載した半導体製造装置
US6989210B2 (en) 2003-04-23 2006-01-24 Hewlett-Packard Development Company, L.P. Fuel cartridge with thermo-degradable barrier system
US8974630B2 (en) 2003-05-07 2015-03-10 Sungkyunkwan University Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP2005026120A (ja) * 2003-07-03 2005-01-27 Ibiden Co Ltd セラミックヒータ
US6837231B1 (en) 2003-07-11 2005-01-04 General Motors Corporation Cylinder bank work output balancing based on exhaust gas A/F ratio
US20050016465A1 (en) 2003-07-23 2005-01-27 Applied Materials, Inc. Electrostatic chuck having electrode with rounded edge
TWI247551B (en) 2003-08-12 2006-01-11 Ngk Insulators Ltd Method of manufacturing electrical resistance heating element
US6913571B2 (en) 2003-10-14 2005-07-05 Datex-Ohmeda, Inc. Direct heater control for infant care apparatus
JP2005123286A (ja) 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2005136025A (ja) 2003-10-29 2005-05-26 Trecenti Technologies Inc 半導体製造装置、半導体装置の製造方法及びウエハステージ
JP2005150370A (ja) * 2003-11-14 2005-06-09 Kyocera Corp 静電チャック
JP4602662B2 (ja) * 2003-12-01 2010-12-22 株式会社ブリヂストン セラミックヒータユニット
KR20050053464A (ko) 2003-12-01 2005-06-08 정준호 직렬 연결된 2개의 다이오드를 이용한 반도체 기억소자
US20100257871A1 (en) 2003-12-11 2010-10-14 Rama Venkatasubramanian Thin film thermoelectric devices for power conversion and cooling
US7163722B2 (en) 2003-12-19 2007-01-16 Lcd Lighting, Inc. Device and method for coating serpentine fluorescent lamps
US7250309B2 (en) 2004-01-09 2007-07-31 Applied Materials, Inc. Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
JP4349952B2 (ja) 2004-03-24 2009-10-21 京セラ株式会社 ウェハ支持部材とその製造方法
JP4710255B2 (ja) * 2004-03-26 2011-06-29 ウシオ電機株式会社 加熱ステージ
US7141763B2 (en) 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP2005294237A (ja) 2004-04-05 2005-10-20 Aun:Kk 面状ヒーター
JP4281605B2 (ja) 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US20050229854A1 (en) 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
JP4553247B2 (ja) 2004-04-30 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
KR20050121913A (ko) 2004-06-23 2005-12-28 삼성전자주식회사 베이크 장치
US7143222B2 (en) 2004-09-21 2006-11-28 International Business Machines Corporation Adaptive message delivery system
US7396431B2 (en) 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
KR100632544B1 (ko) 2004-12-15 2006-10-09 현대자동차주식회사 직류변환기의 게이트 드라이버 회로
US7475551B2 (en) 2004-12-23 2009-01-13 Nanocoolers, Inc. System employing temporal integration of thermoelectric action
US7126092B2 (en) * 2005-01-13 2006-10-24 Watlow Electric Manufacturing Company Heater for wafer processing and methods of operating and manufacturing the same
DE102005004072A1 (de) 2005-01-28 2006-08-03 Danckert, Hermann, Dr.-Ing. Fluchtraum zum Schutz vor Flutwellen
US20060226123A1 (en) 2005-04-07 2006-10-12 Applied Materials, Inc. Profile control using selective heating
KR100925033B1 (ko) 2005-06-29 2009-11-04 와틀로 일렉트릭 매뉴팩츄어링 컴파니 스마트 적층형 히터면
JP4667158B2 (ja) 2005-08-09 2011-04-06 パナソニック株式会社 ウェーハレベルバーンイン方法
JP3933174B2 (ja) * 2005-08-24 2007-06-20 住友電気工業株式会社 ヒータユニットおよびそれを備えた装置
JP3972944B2 (ja) * 2005-09-12 2007-09-05 住友電気工業株式会社 セラミックスヒータ及びそれを備えた半導体製造装置
JP2007081160A (ja) 2005-09-14 2007-03-29 Fujitsu Ltd 半導体装置の製造方法
JP4483751B2 (ja) 2005-09-16 2010-06-16 株式会社デンソー 電源逆接続保護回路
JP2007149598A (ja) * 2005-11-30 2007-06-14 Matsushita Electric Ind Co Ltd シート状温度制御装置
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
JP2007242913A (ja) * 2006-03-09 2007-09-20 Hitachi High-Technologies Corp 試料載置電極及びそれを用いたプラズマ処理装置
US8168050B2 (en) 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
JP4394667B2 (ja) * 2006-08-22 2010-01-06 日本碍子株式会社 ヒータ付き静電チャックの製造方法
US7501605B2 (en) 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7557328B2 (en) 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
JP4850664B2 (ja) 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
KR20080058109A (ko) 2006-12-21 2008-06-25 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열방법
US8222574B2 (en) 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US20080197015A1 (en) 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
CN101681870B (zh) * 2007-03-12 2011-08-17 东京毅力科创株式会社 用于提高衬底内处理均匀性的动态温度背部气体控制
KR100849069B1 (ko) 2007-04-20 2008-07-30 주식회사 하이닉스반도체 정전기 방전 보호 장치
WO2008140022A1 (ja) * 2007-05-08 2008-11-20 Tokyo Electron Limited 化合物半導体の熱処理方法及びその装置
US8057602B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US20090000738A1 (en) 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP5169046B2 (ja) * 2007-07-20 2013-03-27 ウシオ電機株式会社 光照射式加熱処理装置
US20090031955A1 (en) * 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
JP4486135B2 (ja) 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5351479B2 (ja) 2008-01-28 2013-11-27 東京エレクトロン株式会社 加熱源の冷却構造
JP5307445B2 (ja) 2008-04-28 2013-10-02 日本碍子株式会社 基板保持体及びその製造方法
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP2010153730A (ja) 2008-12-26 2010-07-08 Omron Corp 配線構造、ヒータ駆動装置、計測装置および制御システム
JP2010157559A (ja) * 2008-12-26 2010-07-15 Hitachi High-Technologies Corp プラズマ処置装置
GB2470063B (en) 2009-05-08 2011-09-28 Siemens Magnet Technology Ltd Quench propagation circuit for superconducting magnets
US10049859B2 (en) 2009-07-08 2018-08-14 Aixtron Se Plasma generating units for processing a substrate
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
CN105428295B (zh) 2009-12-15 2020-08-11 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US8624168B2 (en) * 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US9324589B2 (en) * 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) * 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10217615B2 (en) * 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236193B2 (en) 2009-10-21 2019-03-19 Lam Research Corporation Substrate supports with multi-layer structure including independent operated heater zones
US10720346B2 (en) 2009-10-21 2020-07-21 Lam Research Corporation Substrate support with thermal zones for semiconductor processing
KR102550232B1 (ko) * 2011-09-16 2023-06-29 램 리써치 코포레이션 국부화된 자기장을 생성하는 기판 지지 어셈블리의 컴포넌트
KR102757603B1 (ko) * 2011-09-16 2025-01-21 램 리써치 코포레이션 국부화된 자기장을 생성하는 기판 지지 어셈블리의 컴포넌트
KR20230098924A (ko) * 2011-09-16 2023-07-04 램 리써치 코포레이션 국부화된 자기장을 생성하는 기판 지지 어셈블리의 컴포넌트
KR20210089250A (ko) * 2011-09-16 2021-07-15 램 리써치 코포레이션 국부화된 자기장을 생성하는 기판 지지 어셈블리의 컴포넌트
JP2015509280A (ja) * 2011-09-21 2015-03-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体処理のための平面熱ゾーンを伴う熱板
KR101976538B1 (ko) * 2012-02-16 2019-05-10 주식회사 미코 온도 가변형 정전척 및 이를 포함하는 기판 처리 장치
KR20130094578A (ko) * 2012-02-16 2013-08-26 주식회사 미코 온도 가변형 정전척 및 이를 포함하는 기판 처리 장치
KR20180064569A (ko) * 2012-04-24 2018-06-14 어플라이드 머티어리얼스, 인코포레이티드 진보된 rf 및 온도 균일성을 갖는 정전 척
JP2016146487A (ja) * 2012-04-24 2016-08-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高度なｒｆ及び温度の均一性を備えた静電チャック
KR101958018B1 (ko) * 2012-04-24 2019-03-13 어플라이드 머티어리얼스, 인코포레이티드 진보된 rf 및 온도 균일성을 갖는 정전 척
JP2015517225A (ja) * 2012-04-24 2015-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高度なｒｆ及び温度の均一性を備えた静電チャック
CN103578900A (zh) * 2012-08-06 2014-02-12 中微半导体设备(上海)有限公司 等离子体处理设备及其静电卡盘
JP2014075525A (ja) * 2012-10-05 2014-04-24 Ngk Spark Plug Co Ltd 積層発熱体、静電チャック、及びセラミックヒータ
JP2014112672A (ja) * 2012-11-30 2014-06-19 Lam Research Corporation 温度制御素子アレイを備えるｅｓｃ用の電力切替システム
US10199246B2 (en) 2013-10-25 2019-02-05 Tokyo Electron Limited Temperature control mechanism, temperature control method and substrate processing apparatus
CN104752130A (zh) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 等离子体处理装置及其静电卡盘
US12243756B2 (en) 2014-02-07 2025-03-04 Applied Materials, Inc. Temperature controlled substrate support assembly
US10824193B2 (en) 2014-03-13 2020-11-03 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US11531372B2 (en) 2014-03-13 2022-12-20 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US11054858B2 (en) 2014-03-13 2021-07-06 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US11762423B2 (en) 2014-03-13 2023-09-19 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US12072736B2 (en) 2014-03-13 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US12009244B2 (en) 2014-07-23 2024-06-11 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
US12334385B2 (en) 2014-07-23 2025-06-17 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
EP3187620A4 (en) * 2014-08-28 2018-03-28 Boe Technology Group Co. Ltd. Evaporation equipment and evaporation method
US11688590B2 (en) 2018-03-26 2023-06-27 Ngk Insulators, Ltd. Electrostatic-chuck heater
KR102368832B1 (ko) 2021-07-08 2022-03-02 에이피티씨 주식회사 다중 가열 영역 구조의 정전 척
US12293933B2 (en) 2021-12-15 2025-05-06 Vm Inc. Electrostatic chuck with multiple heater zones

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US8637794B2 (en) 2014-01-28
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US20140096909A1 (en) 2014-04-10
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US9646861B2 (en) 2017-05-09
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US20110092072A1 (en) 2011-04-21
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TW201125067A (en) 2011-07-16
TW201635425A (zh) 2016-10-01
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US10720346B2 (en) 2020-07-21

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