TWI661567B - 薄膜電晶體、薄膜電晶體之製造方法、及半導體裝置 - Google Patents

薄膜電晶體、薄膜電晶體之製造方法、及半導體裝置 Download PDF

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TWI661567B
TWI661567B TW106138802A TW106138802A TWI661567B TW I661567 B TWI661567 B TW I661567B TW 106138802 A TW106138802 A TW 106138802A TW 106138802 A TW106138802 A TW 106138802A TW I661567 B TWI661567 B TW I661567B
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layer
oxide semiconductor
film transistor
thin film
electrode
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TW106138802A
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Chinese (zh)
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TW201810688A (zh
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今藤敏和
Toshikazu Kondo
岸田英幸
Hideyuki Kishida
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半導體能源研究所股份有限公司
Semiconductor Energy Laboratory Co., Ltd.
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TW106138802A 2009-02-20 2010-02-08 薄膜電晶體、薄膜電晶體之製造方法、及半導體裝置 TWI661567B (zh)

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JP2009037912 2009-02-20
JP2009-037912 2009-02-20

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TW201810688A TW201810688A (zh) 2018-03-16
TWI661567B true TWI661567B (zh) 2019-06-01

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