KR100399556B1 - 배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 - Google Patents
배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 Download PDFInfo
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- KR100399556B1 KR100399556B1 KR1020007008531A KR20007008531A KR100399556B1 KR 100399556 B1 KR100399556 B1 KR 100399556B1 KR 1020007008531 A KR1020007008531 A KR 1020007008531A KR 20007008531 A KR20007008531 A KR 20007008531A KR 100399556 B1 KR100399556 B1 KR 100399556B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 252
- 239000010409 thin film Substances 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 89
- 239000010949 copper Substances 0.000 claims abstract description 330
- 239000010410 layer Substances 0.000 claims abstract description 248
- 229910052802 copper Inorganic materials 0.000 claims abstract description 225
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 224
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- 229910000476 molybdenum oxide Inorganic materials 0.000 description 5
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- 230000006866 deterioration Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
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- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (20)
- 삭제
- 삭제
- 삭제
- 삭제
- 절연성 표면층을 구비한 기판,상기 기판 상에 형성되는 TiN막, 및상기 TiN막 위에 형성되는 배선을 포함하며,상기 배선은 동층(Cu layer)의 주위에 티탄막과 티탄 산화물로 이루어지는 막을 갖는박막 트랜지스터 기판.
- 제5항에서,상기 티탄막은 상기 동층의 주위에 형성되어 있고, 상기 티탄 산화물은 상기 티탄막의 표면에 형성되어 있는 박막 트랜지스터 기판.
- 제5항에서,상기 티탄막은 상기 동층 주위의 일부에 형성되어 있고, 상기 티탄 산화막은 상기 동층 주위의 나머지 부분에 형성되어 있는 박막 트랜지스터 기판.
- 절연성 표면층을 구비한 기판,상기 기판 상에 형성되는 TiN막, 및상기 TiN막 위에 형성되는 배선을 포함하며,상기 배선은 동층의 주위에 크롬막과 크롬 산화물로 이루어지는 막을 갖는박막 트랜지스터 기판.
- 제8항에서,상기 크롬막은 상기 동층 주위에 형성되어 있고, 상기 크롬 산화물은 상기 크롬막의 표면에 형성되어 있는 박막 트랜지스터 기판.
- 제8항에서,상기 크롬막은 상기 동층 주위의 일부에 형성되어 있고, 상기 크롬 산화물은 상기 동층 주위의 나머지 부분에 형성되어 있는 박막 트랜지스터 기판.
- 삭제
- 삭제
- 절연성 표면층을 구비한 기판,상기 기판 상에 형성되는 TiN막, 및상기 TiN막 위에 형성되는 배선을 포함하며,상기 배선은 동층의 표면에 티탄 또는 티탄 산화물로 이루어지는 피막을 갖는트랜지스터 기판.
- 제13항에서,상기 배선의 피막은 상기 동층의 표면에 형성된 티탄막과 상기 티탄막의 표면에 형성된 티탄 산화물로 이루어지는 막을 갖는 박막 트랜지스터 기판.
- 기판 상에 티탄, 몰리브덴, 크롬 및 탄탈로 이루어진 군에서 선택된 금속물질층을 형성하는 단계,상기 금속물질층 위에 동막을 형성하는 단계,상기 금속물질층 및 동막을 소정의 배선 형상으로 패터닝하는 단계, 그리고상기 기판을 어닐링처리하여 상기 동막 위에 상기 금속물질로 이루어진 피막을 형성하는 단계를 포함하는 박막트랜지스터 기판의 제조방법.
- 기판 상에 TiN막을 형성하는 단계,상기 TiN막 위에 티탄, 몰리브덴, 크롬 및 탄탈로 이루어진 군에서 선택된 금속물질층을 형성하는 단계,상기 금속물질층 위에 동막을 형성하는 단계,상기 금속물질층 및 동막을 소정의 배선 형상으로 패터닝하는 단계, 그리고상기 기판을 어닐링처리하여 상기 동막 위에 상기 금속물질로 이루어진 피막을 형성하는 단계를 포함하는 박막트랜지스터 기판의 제조방법.
- 제16항에서,상기 TiN막 위에 금속물질층을 형성하는 단계는 상기 금속물질층의 두께가 10 내지 20nm가 되도록 하는 박막트랜지스터 기판의 제조방법.
- 제15항 또는 제16항에서,상기 기판을 어닐링처리하는 단계는 상기 피막이 산소를 함유하도록 산소분위기 하에서 수행하는 박막트랜지스터 기판의 제조방법.
- 제16항에서,상기 동막을 형성하는 단계 전에 상기 금속물질층의 표면에 생성된 금속 산화층을 플라즈마 에칭으로 제거하는 단계를 추가로 포함하는 박막트랜지스터 기판의 제조방법.
- 대향 배치된 1쌍의 기판 사이에 액정이 끼워져 유지되고,상기 1쌍의 기판 중 한쪽이 제5항 내지 제10항, 및 제13항 중 어느 한 항에 기재된 박막 트랜지스터 기판인 액정표시장치.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP98-375320 | 1998-12-14 | ||
JP37532098 | 1998-12-14 | ||
JP99-224692 | 1999-08-06 | ||
JP22469299 | 1999-08-06 | ||
PCT/JP1999/006877 WO2000036641A1 (en) | 1998-12-14 | 1999-12-08 | Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
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KR20010040659A KR20010040659A (ko) | 2001-05-15 |
KR100399556B1 true KR100399556B1 (ko) | 2003-10-17 |
Family
ID=26526204
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Application Number | Title | Priority Date | Filing Date |
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KR1020007008531A KR100399556B1 (ko) | 1998-12-14 | 1999-12-08 | 배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6956236B1 (ko) |
EP (1) | EP1063693B1 (ko) |
JP (1) | JP4247772B2 (ko) |
KR (1) | KR100399556B1 (ko) |
TW (1) | TW452860B (ko) |
WO (1) | WO2000036641A1 (ko) |
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EP2096666A4 (en) * | 2006-12-28 | 2015-11-18 | Ulvac Inc | METHOD FOR PRODUCING A WIRING FOIL, TRANSISTOR AND ELECTRONIC DEVICE |
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CN100353565C (zh) * | 2004-12-13 | 2007-12-05 | 友达光电股份有限公司 | 薄膜晶体管元件及其制造方法 |
EP2096666A4 (en) * | 2006-12-28 | 2015-11-18 | Ulvac Inc | METHOD FOR PRODUCING A WIRING FOIL, TRANSISTOR AND ELECTRONIC DEVICE |
EP2101346A4 (en) * | 2006-12-28 | 2015-11-18 | Ulvac Inc | METHOD FOR FORMING WIRING FILM, TRANSISTOR, AND ELECTRONIC DEVICE |
Also Published As
Publication number | Publication date |
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KR20010040659A (ko) | 2001-05-15 |
EP1063693B1 (en) | 2016-06-29 |
EP1063693A4 (en) | 2007-06-06 |
US20070102818A1 (en) | 2007-05-10 |
JP4247772B2 (ja) | 2009-04-02 |
US6956236B1 (en) | 2005-10-18 |
US7804174B2 (en) | 2010-09-28 |
TW452860B (en) | 2001-09-01 |
WO2000036641A1 (en) | 2000-06-22 |
EP1063693A1 (en) | 2000-12-27 |
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