TW408369B - Plasma processes for depositing low dielectric constant films - Google Patents

Plasma processes for depositing low dielectric constant films Download PDF

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Publication number
TW408369B
TW408369B TW88102101A TW88102101A TW408369B TW 408369 B TW408369 B TW 408369B TW 88102101 A TW88102101 A TW 88102101A TW 88102101 A TW88102101 A TW 88102101A TW 408369 B TW408369 B TW 408369B
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Taiwan
Prior art keywords
layer
gas
patent application
scope
dielectric layer
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TW88102101A
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English (en)
Inventor
David Cheung
Wai-Fan Yau
Robert P Mandal
Shin-Puu Jeng
Kuo-Wei Liu
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Applied Materials Inc
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Priority claimed from US09/021,788 external-priority patent/US6054379A/en
Priority claimed from US09/162,915 external-priority patent/US6287990B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW408369B publication Critical patent/TW408369B/zh

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    • H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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  • Chemical Vapour Deposition (AREA)

Description

經濟部智慧財產局員工消费合作社印髮 408369 A7 ___ B7 五、發明説明（） 發明領A : 本發明係關於積體電路之製造，特别是在基材上沉積 介電層之製程和裝置3 發明眢景： 現代半導體7C件製造中一項主要的步驟為在基材上 以化學氣體反應形成金屬和介電層薄膜。此類沉積製程又 私作化學氣相沉積或CVD。傳統之熱傳CVD製程提供反 應性氣體到基材表面上並產生熱感化學反應並得到所需 <薄膜。某些熱傳CVD製程中的高溫操作可能將先前基 材上所形成之元件鍍層損壞。在較低溫沉積金屬和介電層 薄膜之較佳的方法為電漿增強CVD(PECVD)技術，例如描 述於美國專利第5,362,526號中，其名稱為，，Plasma_ Enhanced CVD Process Using TEOS for Depositing Silicon Oxide ’’在此則列為參考文件。應用射頻（RF)能量於靠近 基材表面之反應區的電漿增強CVD技術提高了反應氣體 之激發和/或解離，因而產生了高度反應性離子電漿。由於 此釋出離子之高度反應性可降低發生化學反應所需之能 量’因而也使得PECVD製程所需之溫度也降低了。 半導體元件幾何形狀之大小比幾十年前剛出來的尺 寸明顯減小許多。從那時候起，積體電路就依循著兩年/ 只剩一半尺寸之規則（通常稱之為Moore’s定律），意謂著 每兩年一個晶片上的元件數目為倍數成長。今曰的製造麻 已經能生產具有0,35μιη甚至0.1 8μΐη大小之元件，且可預 第S頁 本紙張从遑用中國國家標準（c叫从祕（21GX297公釐) ' I---- ---裝----一---^訂------線 (讀先閲讀背面之注項再4'窝本頁) 經濟部智慧財產局W工消夤合作社印製 408369 A7 ____ B7____—__ 五、發明説明（） 期的是未來將會生產更小尺寸之元件。 為了在積體電路上更降低其尺寸大小，因此需要使用 具有低阻值之導電材料和低k(介電常數<4.〇)之絕緣體以 降低鄰近金屬線之問的電容耦合。線狀/阻障層已經在導電 材料和絕緣體之間使用，以避免例如溼氣之副產物擴散到 導電材料上1如國際公開號碼WO94/01885中所描述的。 例如’在形成低k絕緣體時所產生的溼氣很容易擴散到導 電金屬的表面而増加導電金屬表面的阻抗。由傳統氧化矽 或氮化矽材料所形成之阻障/線狀層可阻擋副產品之擴 散。然而，阻障/線狀層之介電常數一般要超過4.0，而此 高介電常數和絕緣體之組合並不能有效的降低介電常 數。 第1 A圖例舉了在國際公開號碼w〇 94/0 1 885中所描 述的以PECVD製程來沉積阻障/線狀層。peCVD製程沉積 了多層的不同介電層，首先在形成於基材4之上的圖案化 金屬層的金屬線3上沉積一層二氧化矽（Si〇2)線狀層2 « 線狀層2係由矽曱烷和一氧化二氮（N2〇)於3〇〇°c時 以電壓增強反應沉積而成。接著於線狀層2之上則以矽甲 境元素和過氧化物元素反應而沉積—層可自我平坦化之 低k介電層5。可自我平坦化之介電層5中的水氣則在固 化（cure)時移除。線狀層2為氧化的矽甲烷薄膜且當其沉 積成介電常數至少在4.5以上時則具有效的阻障特性。此 氧化的妙甲烷薄膜之介電常數可由減少薄膜之溼氣阻障 性質的製程參數改變而降低到約4.1左右。傳統的線狀 第6頁 本紙張尺度適用争國國家揉準（CNS) A4規格（2丨〇><297公羞） (請先閲讀背面之注意事^ί填寫本頁) .裝. 訂 線 A7 B7 五 _ 經濟部智慧財產局5Κ工消費合作杜印製 4〇8369 發明説明（ 八兩例如氮.化砂（SiN) ’甚至有更高的介電常數，而低k ‘數和此阿k介電常數線狀層之组合對於整個堆疊之 介电$數和电容耦合的改善只能提供些至
助= — 毛…、I 如弔！B圖中所示的，W0 94/01885更進一步的描述 選擇【生的—氧化碎（Si〇2)遮蓋層6由碎甲烷和-氧化二 氮反應而沉積於低k介電層5之上。此遮蓋潛6亦 為氧化的矽甲 '故薄膜且當其沉積之介電常數約為4 5左右 時則具極佳的Μ特性。線狀層2和选蓋f 6兩者都具有 大於4.5之介電常數且此高介電常數層都會減少低匕介電 層5之優勢。 當元件變得更小時，則具有高介電常數之線狀和遮蓋 層對多層介電層結構之整個介電常數佔有更大的比例。再 者’已知的低k介電材料一般具有低的氧化物成分，在介 層洞及/或内連線蚀到時並不適合做為触刻中止層。氮化碎 已為低k介電材料中做内連線之中止層材料選項之一。然 而和周圍疋低k介電層比較起來，氮化發具有相當高的 介電常數(介電常數約為7左右）。同時氮切也會增加内 連線之間的電容镇合，即便另一種低k介電材料作為主要 的絕緣層。如此則會產生_擾訊號及/或阻抗-電容（rc)延 遲而使元件之整禮效能退化。目此，在底層之介電層蚀刻 完成之後’通常將氮化矽中止層移除。 低k介電層具有良好的阻障特性以做為線性層及足夠 的氧化物含量β做為蝕刻中止層兩種特性，並且可在相同 第7肓 本紙張尺度適用中國國家揉準（CNS ) Α4说格（2丨0ΧΜ7公釐）
I t r•'—1—.' —r « - I .Γ'J I I 訂— I — I — I 線 (請先閲讀背面之注意事Hv*填寫本頁J 4〇8369 絰濟部智慧財產局員工消費合作社印t A? __B7五、發明説明（) 的反應室中於存在的低k介電材料中加以識別及沉積。此限障層不會增加介電屬之整個令電常數，且此姓刻中止層 不用在底層蝕刻熳移除。 美國專利第5,554,57〇號描述了以熱傳CVD氧化碎所 形成的障廣’其中將M C_H群之有機珍烷氧化而非碎 ’坡化，以增加沉積薄膜之密度並改善鍍層之間的黏附性^ 例如，由四乙氧基矽酸鹽（TEOS)和臭氧所產生之熱傳CVD層，可沉積於由有機矽烷和Νι0或〇2所產生之PECVD氧 化矽薄膜之間。 描述於’5 70專利中的阻障層最好是具有低碳含量之 高密度氧化矽層。雖然較低頻率之射頻（RF)功率可改善薄 暎之應力，此大密度鍍層仍利用4〇〇w之高頻率射頻（RF) 功率加以沉積。阻障層最好由烷氧基矽烷或氣化烷基矽烷 和N2〇來製造’以降低碳含量並增加鍵層之密度。 5 70專利並沒有揭露製造具低介電常數之阻障層或 t造具高含氧量之蝕刻中止層的製程條件。而且，57〇之專 利並沒有利用所描述之鍍層作為鄰近低k介電層之阻障層 或作為一蝕刻中止層。 在次微米之元件中，仍然需要具有低介電常數，民好之阻障特性，及高含氧量之介電層作為阻障層或蝕刻中止層。 目的及挺埤：本發明提供了沉積低介電常數之氧化矽層的方法和 第8頁 ^紙涑尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） ' (請先閲讀背面之注意事ί填寫本頁) •装. ,ιτ -線 經濟部智慧財產局員工消费合作杜印製 408369 A7 ________£7_ ____ _ 五、發明説明（） 裝置氧化矽層之製造由有機梦境，有機碎氧貌或其組合 之私淡辅助化學氣相沉積法產生，利用RF或微波功率來 產生反應性氧氣原子。氧化矽層之性質很容易由製程參數 之曼化來控制，且不同鍍層可在相同之沉積反應室中造行 以改善雙重鑲嵌製程。另外，氧化矽層可作為不同鍍層之 間的黏考·層，或作為内金屬介電層。較佳的氧化矽層可由 一氧化二氮（Nz〇)，和包含Si_H鍵結之矽化合物，例如甲 基矽烷（CH3SiH3)'二甲基矽烷（（CH3)2SiH2)或m3,-四 〒基二矽氧烷（（CH3)2-SiH-(CH3)2)。 此氧化矽層乃在低壓和高溫時加以固化（cure)以穩定 其特性。氧化矽層最好利用分開的射頻（RF)功率應用到沉 積反應至中以增加沉積層之多孔性。在反應室壓力小於約 1 〇 t〇rr時最好使用較低喈之RF功率。在離子化反應室中 則最好提供微波功率給氧化氣體以控制反應性氧化予的 形成而不需増加沉積反應室中的功率能階。 在一較佳實施例中，氧化矽層乃由一或多種包含si_ Η鍵結之有機矽烷及/或有機矽氧烷化合物之電漿反應而. 沉積在圖案化之金屬層之上。 對於在一沉積反應室中製造具信賴度之雙重鑲嵌結 構來說，本發明之氧化矽層積體電路製程更進—步的利用 性為降低内連線之間的電容耦合^於一較佳實拖例中，具 兩含竣量之低k介電薄膜’大於約20%之原子重量百分比 的含破量’乃沉積作為介層洞等級之介電層。—具低碳含 量之低k介電薄膜，低於约丨〇%之原子重量百分比的含碳 第9頁 本紙張尺度適用中圃S家棋準（CNS ) A4规格（210X297公釐） -------------装---.--.—訂--------線 (請先閲1#背面之注意事填寫本頁) 408369 經濟部智廷財產局負工消費合作社印製 Μ _____ Β7 ____ • — I ~ ~·" _五、發明説明（） 量’則接著沉積於高含碳量之鍍層上以形成溝渠等級之介 電層。一雙重鑲嵌蝕刻接著在溝渠等級之介電層中形成溝 渠且中止於介層洞等級之介電層上。在介層洞等級之介電 層中领刻介層洞之後，上表面接著平坦化而在溝渠等級介 電層上留下平坦之表面。 本發明更提供了至少包含氧化矽之内金屬介電材料 (IMD) ’沉積於傳統之蝕刻中止層如氧化矽或氮化矽之 上°此氧化矽層也可沉積做為薄的黏著層。 圈式餹單說明： 本發明所描述之特徵，優點和目的經由上述之發明 概述’下面詳細的發明說明，並參考附圖所例舉之實施例 之後，將更明瞭其細節。 另外’附圖所例舉的只為本發明之典型實施例而 已’並非本發明之限制條件，對於其它等效之實施例亦包 含於本發明中。其中： 第1 A-1 B圖（先前技術）為習知的製程中於基材上沉積介電 層之圖示； 第2圖為依照本發明例舉之CVD電漿反應室結構之截面 视圖： 第3圖為第2圖之CVD電漿反應室之系統監控的圖示； 第4圖為第2圖所例舉之CVD電漿反應室的製程控制♦ 腦程式產品之流程圖； 第5圖為依照本發明之一實施例在孔洞充填過程 τ <積缘 笫10頁 本紙張尺度通用中國囷家標準（CNS )人4洗格（2ΐ〇χ297公釐〉 {請先閲讀背面之注意事Μ：填寫本頁) -装. 訂 r 1-- I i -. 408369 A7 B7 _________— 五、發明説明（） 狀和遮蓋層之步驟的流程圖； 第6A-6E圖為第5圖中於基材上沉積鍍層之圖示； 第7圖為包含本發明之氧化矽層雙重鑲嵌結構的截面視 圖： 第8A-8H圖為本發明之雙重鑲嵌沉積順序實施例的截面 視圖， 第9圖為前金屬介電層和内金屬介電層之間’包含本發明 之氧化矽層黏著層的截面視圖； 第10A-10H圖為雙重鑲嵌沉積順序中，以本發明之氧化矽 做為黏著内金屬介電薄膜到傳統之蝕刻中止層的 截面視圖；及 第11A-I1D圖為積集化雙重鎮欣沉積順序中，以本發明之 氧化矽做為替代傳統之蚀刻中止層之截面視圖。 為了要更加瞭解本發明’則可參考後面之詳細說明。 (請先閱讀背面之注意事^:填寫本頁) 装· 經濟部智慧財產局員工消費合作社印製 圈號對Μ說明： 200 放置晶圓 205 沉積線狀層 210 沉積縫隙充填層 215 沉積遮蓋層 220 移除晶圚 420 製程選擇器 430 製程序列器 440 反應室管理 450 晶座控制 460 製程氣體控制 470 壓力控制 480 加熱器控制 490 電槳控制 第11頁 本紙張尺度適用中國國家搮導（CNS > A4規格（210X297公嫠） 408369 A7 B7 五、發明説明（ 發明掸細說明： 本發明提供了沉積具有料電常數，“氧量，和足 夠之礙含量以提供㈣特性的氧切層之方法和裝置。此 氧化矽層至少包含氧化的有嬙 機碎規*或有機矽氧烷且可做 為鄰近其它介電材料之線狀層， 滑做為鄰近介電材料且具低 含氧量之蝕刻中止層，做為内金 η坌屬介电層，及做為不同材 質之間的黏著層。氧化的有機妙 艰矽烷材料由電漿辅助氧化的 有機矽烷或有機矽氡烷化合物利 α切刊用攸约l〇W到約2〇〇w之 固定RF功率’或從約2GW到约5崎之脈衝式RF功率 加以沉積。此氧化梦層之沉積也可利用經常性的中斷來改 善其多孔性’例如更換反應室或提供冷卻時間，功率 則最好提供I3MHz和14MHz>f^0A合虹
Hz <間的高頻。RF功率最好在
很短的循環時提供，且其中的功率只在循環小於約200HZ 時才開啟到上述的能階’而此功率開啟的循環只佔全部循 環約丨0%到約30%。此斷斷續續的RF功率可在較高的峰 值能階操作，並JL和韓低功率能階之固定RF功率有相同 的整體功率輸入》 經濟部智.%財產局50:工消費合作杜印«. 氡化矽層中留存的碳對於低介電常數和阻障特性具 有供獻。而留存的碳在約1 %和約5〇%原子重量之間， 最好包含足夠的C-H或C-F鍵結以提供氧化矽層親水的特 性’以產生相當的低介電常數和改善的溼氣阻障特性。 氧化矽層由包括碳之有機物群集的矽化合物所製 造’且不容易於製程條件中以氧化來去除.而-C_H鍵結最 好包括例如烷基或芳香基群集。或氟化碳衍生物。適當的 第12頁 本紙張尺度適用中國國家標準（CNS ) A4規格（210XM7公釐） 408369 A7 B7 甲基矽烷 二甲基矽烷 三甲基矽烷 二曱基矽烷二醇 乙基矽烷 笨基矽烷 二苯基矽烷 二苯基矽烷二醇 曱基苯基矽烷 二矽烷甲烷 雙（甲基矽烷）甲烷 1，2-二碎坑乙燒 1.2- 雙（甲基矽烷）乙烷 2.2- 二碎坑丙貌 1，3,5-三矽烷-2,4,6-三亞甲基 1.3- 二甲基二矽氧烷 1.1.3.3- 四甲基二矽氧烷 六甲基二碎氧燒 U-雙（矽亞甲基）二矽氧烷 雙（1-甲基二矽氧烷基）甲烷 2,2-雙（1-甲基二矽氧烷基）丙坑 經濟部智慧財產局員工消費合作社印製 五、發明説明（) 有機物群集也可包括烯 能。有機矽化合物包括： 基和環烯基群集及其衍生之功 CH3-SiH3 (CH3)2-SiH2
(CH3)3-SiH (CH3)2-Si-(OH)2 CH3-CH2-SiH3 C6H5-SiH3 (C6H5)2-SiH2 (C6H5)2-Si-(OH)3 C6H5-SiH2-CH3
SiH3-CH2-SiH3 CH3-SiH2-CH2-SiH2-CH3
SiH3-CH2-CH2-SiH3 CHrSiH2-CH2-CH2-SiH2-CH3
SiH3-C(CH3)2-SiH3 -(-SiH2CH2-)3-(cyclic) CH3-SiH2-0-SiH2-CH3 (CH3)2-SiH-0-SiH-(CH3)2 (CH3)2-Si-0-Si-(CH3)2 (SiH3-CH2-SiH2-)2-〇 (CH3-SiH2-0-SiH2-)2-CH2 (CH3-SiH2-0-SiH2-)2-C(CH3)2 攀 第13頁 --------,---择-------1T------^ (請先聞讀背面之注意事填寫本育) 本紙張尺度通用争國國家橾準（CNS ) Α4現格（210X297公釐） -(-SiHCH3-〇-)4-(cyclic) -(-Si(CH3)2-〇-)4-(cyclic) -(-SiHCH3-0-)5-(cyclic) -(-SiH2-CH2-SiH2-0-)2-(cyclic) -SiHrCH2-SiHrCH2-SiH2-CKcyclic) ，SiH2-CH2-CH2-SiHrO-(cyclic) 408369 A7 __________B7 五、發明説明（） 2,4,6,8-四甲基環四矽氧燒 八甲基環四矽氧烷 2,4,6,8，10-五甲基環五碎氧境 1，3,5,7-四矽燒-2,6-二氧基_4,8-二亞甲基 2,4,6-三珍燒四氫p比喃 2,5-—秒燒四氣咬喃 有機砂化合物於，y & '儿積時和氧氣（02)或含氧之化合物 如一氧化二氮（N2〇)，奠·签^ ;及礼（03)’二氧化碳（(：〇2)，和水（Η2〇) 反應而氧化，且最好是釦…A > 取疋和N:〇反應，而沉積薄膜的碳含量 從1到5 0 %的原子重奮，耘 X 較佳則约為5到30%。氧化的有 機妙層具有約3.0的介雷當缸 J J屯*數且具極佳的阻障特性。此氧 化的有機碎層和傳统的供l Λ β 啊寻.无旳低k介電層比較起來更具有高含氧 量且有良好的黏著特性。 當需要在沉積薄膜中得到所需的碳含量時，氧氣和含 氧的化合物最好將其解離以增加反應性。RF功率可耦合 到沉積反應室中來增加氧化之化合物的解離性。氧化之化 合物也可在進入沉積反應室之前於微波反應室中解離’以 降低多餘的含矽化合物之解離。氧化矽之沉積可為連續性 或非連續性。雖然最好是在一個反應室中進行沉積，但也 可在兩個或多個沉積反應室中進行沉積順序。再者，Rp 功率可由循環或脈衝方式來降低基材的熱度並提升沉積 薄膜的多孔性。於氧化矽層沉積時，基材的溫度則維持從 約-20°C到約400°C ’且最好維持在約_2〇°c到4〇°C的溫 第14育 本紙張尺度逋用中國國家搮準（CNS ) A4規格（210X29?公釐） ------------裝---r--.—、tr------^ (請先鬩讀背面之注^^<^填寫本頁) 經濟部智慧財產局員工消費合作社印製 408369 A7 B7 五、發明説明（） 度 有機矽烷和有機矽氧烷化合物最好包括下列·结構1 I I —C— Si— ΗI I 其中每個碎乃結合到一或.兩個破原子，JL破乃包括於 有機物群集中，且最好是烷基或#基群集例如-CH3 ’ · CH2-CH3 ’ -CH2-，或·CH2_CH2·，或氟化碳之衍生物。在 氟化物衍生物的碳·原子為部分或全部的氟化以替代I原 子3當有機.碎境·和有機碎氧燒化合物包括兩個或多個硬原 子時，每個珍都由_C.’或- C- C-和另一個梦分開，其 中的碳則包含於有機物群集中，且最好為烷基或亞燒基群 集如-CH2-，_CH2-CH2· , -CH(CH3)-或 _C(CH3)2-，或氟化 物之衍生物。 較佳的有機矽虎和有機碎氧炫·化合物在室溫時為氣 體或液體卫可揮發到約1 0 torr以上。較佳的有機矽燒和 有機矽氧烷包括： Ί ^ ! Ik n n n n n 線 (請先閱讀背面之注意事亨名填寫本頁) 經濟部智慧財產局員工消費合作社印製 甲基矽烷 二甲基矽燒 三甲基矽烷 二矽烷甲烷 雙（甲基矽烷）甲烷 1，2·二矽烷乙烷 1，2-雙（甲基矽烷）乙坑 CH3-SiH3 (CH3)2*SiH2 (CH3)3-SiH SiHj-CH2-SiH3 CH3-SiH2-CH2-SiH2'CH： SiH3-CH2-CH2-SiH3 CHrSiH2-CH2-CH2-SiH2-CH3 笫15頁 本纸張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 408369 A 7 B7 五、發明説明（ 經濟部智慧財產局員工消費合作社印製 2.2- 二矽烷丙烷 1.3,5-三矽烷-2.4,6-三亞甲基 1.3- 二甲基二矽氧烷 1.1,3,3 -四甲基二矽氧淀 U-雙（矽亞甲基）二矽氧烷 雙（1-甲基二矽氧烷基）甲烷 雙（1-曱基二矽氧烷基）丙烷 2·4,6,8，Ι0-五甲基環五矽氧烷 U，5,7-四矽坑-2,6-二氡基-4,8-二亞甲基 2，4,6 -三矽烷四氫吡喃 2,5 -二妙燒四氫块喃 及氟化碳衍生物，例如： 三氟甲基矽烷 1，2 -二矽烷四氟乙缔 1.2- 雙(三氟甲基矽烷）四氟乙烷 2.2- 二矽烷六氟丙烷 1，3-雙(碎烷二氟亞曱基)二碎氡烷
SiH3-C(CH3)2-SiHj -(-SiH2CH；-)3-(cyclic) CH3-SiH2-0-SiH2-CH3 (CH3)2-SiH-0-SiH-(CH3)2 (SiH3-CH2-SiH2-)2-〇 (CH3-SiH2-0-SiH2-)2-CH2 (CH3-SiH2-0-SiH2-)2-C(CH3)2 -(-SiHCH3-〇-)5-(cyclic) -(-SiH2-CH2-SiH2-0-)2-(cycUc) -SiH2-CH2-SiH2-CH2-SiH2-CKcycIic) -SiH2-CH2-CH2-SiH2-0-(cyclic) CF3-S1H3 SiH3-CF2-CF2-SiH3 CF3-SiH2-CF2*CF2-SiH2-CF3 SiH3-C(CF3)2-SiH3 (SiH3'CF2-SiH2-)2-〇 雙(1'三氟甲基二矽氧烷基）二氟甲烷（CF3-SiH2-0-SiH2-)2-CF2 2,4,6 -三矽垸四氟吡喃 -SiH2-CFrSiHrCF2-SiH2-CKcycIic) 2，5、二矽烷四氟呋喃 -SiH2-aVCF2-SiH2-0-(cydic) 於有機矽烷和有機矽氧烷中的碳氫群集可以部分的 第16頁 本紙張尺度適用中國國家標隼（CNS ) A4規格（21〇χ297公釐 -------,---^-----訂------^ (請先閲讀背面之注意事項#/填寫本頁) X- 408369 A7 經濟部智慧財產局S工消費合作社印製 發明説明（ B7 或全部將C-Η鍵结氟化而轉換成c 有機砂坡和有機碎氧燒化合物都可/結。有許多較佳的 得》而兩種或多種的有機碎境 '易的以商業行為獲 以應用以提供所需特性的^如介電t錢❹合更可加 性，菹瞄豳* ，备恭欣 吊數，含氣量’疏水 4膜應力和電漿蝕刻特性等。 有機矽烷和有機矽氡烷化 辅助J5 i !Ϊ1 δ « ^ 物瑕好在沉積時由電漿 稀助瓦應利用轧礼加以氧化， —资仆-m η、工 乳乳則在沉積製程時分解 氧化—亂（關而得。没有電衆”.氧化二氣不合 和有機矽烷或有機矽氧烷反應 ^ , 匕起有機矽烷和有機矽氧 纪中的鍵結來說，N-0鍵結很釔 „ 易在·低能量時就被打斷。 氧化之化合物則黏著到例如丰 導體基材之圖案層的接觸 表面以形成沉積薄膜。沉猜的落_丄 積的4膜在低壓和溫度從约1 00 到約450X：時固化，且最好 ^ ^ . 仅q 4〇0 c以上以穩足洚膜的 阻障特性a沉積的薄膜且古 存膜具有足夠的碳含量以提供阻障特 性°碳含量則最好包括C-H< C-F鍵結以提供疏水的薄摸 而具有極佳的溼氣阻障特性。 本發明更提供了一個基材處理系統，其具有/容器包 括反應區，於瓦應區中放置基材的基材承載座，和真空系 統。處ί里系統t包含了連接到《器之反應區的氣體/液體分 配系统，以提供有機矽烷和有機矽氧烷化合物，氧化的氣 ，隋性氣體，和耦合到氣體分配系統的RF產生器，以 在反應區中產生電漿，處理系统更包含了控制器，此控 .，器含有電腦以控制容器，氣體分配系統，和RF產生器， 而一記憶體則Μ合到控制器上，此記憶體至少包含了電腦 體，隋 便 制 第17頁 本紙浪尺度逋用中國國家梯準（CNS )八4祕（210X297^7 (請先聞讀背面之注意事項4填寫本頁) ij. -棄. t 'τ Γ A7 B7 五、發明説明（） 可使用之媒介’ h電腦可讀出的程式碼，以便選擇製程步 跟而利用有機碎和有機碎氧燒化合物及氧化氣體所產 生的電漿來沉積低介電常數的薄膜 於一實施例中’處理系統更包含了電腦可讀出的程式 碼以便選擇製程步驟而沉積線狀的氧化有機碎化合物’ 沉積不同的介電層，且選擇性的沉積氧化之有機矽化合物 之遮蓋層。 本發明更進一步的描述乃有關於特定的裝置以沉積 本發明的氧化碎層和較佳的氧化碎薄膜層^ CVD電漿反應室範例 本發明之方法中適合的CVD電漿反應室如第2圖中 所示，其為垂直方向，而此平行板化學氣相沉積反應室1 〇 的截面視圖則顯示其具有一高真空區15。反應室1〇包含 一氣體分散噴氣頭丨1以便經由噴氣頭中的多個孔洞將製 程氣體分佈到位於基材支撐平台或晶座12上的基材或晶 圓（未顯示出來）上’而晶座12則由升降馬達14來控制高 度。液fia '/主入系統（未顯tf出來）’例如一般用來注入Τ Ε Ο S 液體’也可作為有機矽烷和有機矽氧烷化合物液體注入之 用。而較佳的甲基矽烷則為氣體。 反應室1 0包括將製程氣體和基材加熱，例如使用阻 抗加熱線圏（未顯示出來）或外部燈源（未顯示出來）。參考 第2圖，晶座1 2係放置於支撐架1 3上使得晶座1 2(及晶 座12之上表面所支撐的晶圓）可以在較低負載/離開負載
第18X 本紙浪尺度適用中國國家標準（CNS ) A4規格（2ί〇Χ297公釐） ----·------裝-- (請先閲讀背面之注意事暑填寫本頁} -訂 線 經濟部智慧財產局SK工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 408369 __ Λ? ^ ----Β7 立、發明説明（' ~ 置和靠近噴氣孔11之上半處理位置之間控制移動。 W 00座1 2和晶圆位於處理位置1 4時’則其會被絕緣 斤園繞且製程氣體排放到喷氣孔2 4之中》於製程 進入貪氣孔1 1的氣體乃均勻的徑向分佈到晶圓的表 面畜 ' 。一真2背浦32具有節流閥來控制反應室中氣體的排 故。 在到達噴氣孔1 1之前，沉積和載氣乃經由氣體線18 入到δ系統1 9並將其結合後送到喷氣孔1 1。選擇性 /微波應用器2 8放置於輸入氣體線上以提供額外的能量 來解離氡化氣體且只解離氧化氣體。微波應用器提供的功 率從〇到6〇〇〇W。—般來說，製程氣體供應線18對每個 製程氣體也包括了⑴安全關閉閑（未顯示出來），可用來自 動的或手動的關閉製程氣體流入反應室中’和（ii)質流控 制器（也未顯示出來）可以測量氣體流過氣體供應線的量。 每製程中使用有毒氣體時，傳統的氣體供應線結構中放置 了許多安全關閉閥。 於反應1： 1 0中所執行的沉積製程可為熱傳製程或電. 衆増強製程。於電漿製程中，所控制的電漿一般靠近晶圓 形成，且由RF電源供應器25將RF能量加到分配的噴氣 頭1 1上（晶座12則接地）。另外，RF功率可提供到晶座i 2 或RF功率可在不同頻率提供到不同的元件上。RF電源供 應器25可提供單頻或混頻之RF功率以加強導入高真空區 丨5之反應氣體的分解效率。混頻之RF電源供應器一般可 供應13.56MHz的高RF頻率（rfi)到分配喷氣孔丨丨及 ____ 笫19頁 本纸張尺度4用中S國家樣準（CNS > A4規格（210X297公釐） ----- ----：---：---裝--------:訂------線 {請先閱讀背面之注意事填寫本頁) 經濟部智慧財產局MR工消費合作社印製 A7 ______B7 五、發明説明（) ^ 360ΚΗζ的低RF頻車（RF2)到晶座12。本發明之氧化碎層 最好利用低能階之固定髙頻RF功率或脈衝能階之高頻Rf 功率來製造。脈衝式RF功率最好於約2〇w到約5〇〇W提 供1 3.5 6 Μ Η z之R F功率’而最佳則是從约2 〇 w到約 250W，且為整個循環約1〇%到約30%。固定之RF功率於 約10W到約200W最好提供13.56MHz之RF功率，且最 好從約20W到約1 00W。低功率沉積最好在溫度範圍從約 -20°C到約4〇°C時發生。在較佳的溫度範圍時，沉積薄膜 於沉積時乃部分的聚合化且在接下來的薄膜固化時完全 的聚合化。 當需要額外的氧化氣體解離時，則在氧化氣體輸入沉 積反應室之前輸入從0到3000W的微波功率到選擇性的微 波反應室中。分開的微波功率之加入可在氧化氣體反應之 前避免多餘的矽化合物的解離。當微波功率加到氧化氣體 時，最好使用矽化合物和氧化氣體具不同路徑之氣體分配 板。 一般說來，反應室的内層’分配噴氣孔1 1，晶座1 2， 和許多不同的反應室硬體都由鋁或電鍍鋁所製成，此類 CVD反應室的範例則描述於美國專利第5,〇〇〇，113號之 中，名稱為"Thermal CVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition of Silicon Dioxide and
In-situ Multi-step Planarized Process"，為 Wang 等人所取 得’且Applied Materials為本發明之受讓人。 升降馬達1 4在製程處理位置和較低、晶圓載入位置 第20頁 本紙張尺度逍用中國S家梂準（CNS ) Α4規格（210Χ297公釐） ----r--.---^------ir—------Μ (請先閲讀背面之注意事^寫本頁} 408369 A7 ______ B7 五、發明説明（） 之間將晶座1 2并起和降下。而馬達，氣體混合系統1 9， 和RF電源供應2 5則經控制線3 6由系統控制器3 4加以控 制。反應室包括了類比的組合，例如質流控制器（MFCs) 和標準或脈衝的RF產生器，由系統控制器34經由儲存於 記憶體3 8中系統控制軟體的執行而加以控制，此記憶體 3 8最好是硬碟。馬達和光學感測器則用來移動並決定可移 動式機械組合的位置’例如真空幫浦3 2的節流閥和定位 晶座1 2之位置的馬達。 系統控制器3 4控制C V D反應室的所有作動，jj_控制 器3 4的較佳實施例包括了硬碟，軟碟，及卡夾^此卡爽 包含了單一主機板電腦（SBC)’類比和數位輸入/輸出板， 界面板和步進馬達控制板。系統控制器符合Versa Modular Europeans(VME)的規格標準來定義主機板，卡夾外殼，和 連接器的尺寸及型式。VME標準也定義了匯流排的結構為 16位元資料匯流排和2 4位元位址匯流排。 系統控制器3 4由儲存於硬碟3 8中的電腦程式來操作 控制。電腦程式將指定時序，氣體的混合，RF功率能階， 晶座位置’和其它的相關參數給一特定的製程。至於使用 者和系統控制器之間的溝通界面則經由第3圖中所描續的 CRT螢幕40和光筆44。於較佳實施例中，則使用第二 個螢幕42，第一個螢幕40位於無塵室的牆壁上給操作者 使用’另一個螢幕42則位於牆壁之後專給維修技術人員 使用。此兩個螢幕40，42都顯示相同的訊息，但是只有 一支光筆44可加以使用。在光筆44的尖端具有光線感刻 _ 第21頁 本紙張尺度適用中國國家標準（CNS ) A4規格（2IOX297公釐） ~~~- (請先閲讀背面之注意事I填寫本頁) 裝. 訂 經濟部智慧財產局員工消費合作杜印製 A7 B7 408369 五、發明説明（ 器可用來偵測CRT顯+哭於 ， — .'、器所發出的光線。如果要選擇特及 的螢幕或功能，則操作去扯+ w ， 者將光筆碰觸顯示慕特定的區域击 按下光筆44上面的括缺^、丄— 被碰觸的區域將變成特定的靡 色’或者新的選平_或勞慕合翁_山* “ 瓦恭19顯不出來，以確保光筆和顯牙 幕之間的溝通。 參閱第4圖’製程之程序可利用電腦程式410在例如 系統控制器34上面執行而知以完成。電腦程式碼可利用 任何傳統上電腦可讀取的程式語言例如68〇〇〇組合語言、 C C + +、或pascai來編寫。此類程式碼可利用傳統的文 字編輯器輸入到單一拎奩，+ 丄 』早擋案或多個檔案中，並在電腦可利 用的儲存或執行媒介例如記憶體系統中加以儲存或執 行。假如所輸入的程式碼為高階語言，則程式碼將先經過 編譯，編譯過之程式碼接著和已經過編譯之視窗程式庫常 式目的碼互相連結。為了執行所連結的編譯目的碼，電腦 系統會將此目的碼載入記憶體中，經由cpu讀取和執行此 目的碼來執行程式 第4圖顯不了此電腦程式4丨〇之控制結構的方塊圖。 使用者利用光筆44界面在CRT顯示器40上的顯示選單或 螢幕上設定製程組別號碼和製程反應室號碼到製程選擇 器副常式420中。製程組別為製程參數的預定組別用以執 行特定的製程’並由預定之級别數目所識別。製裎選擇器 副常式420會⑴在一群工具機台中，例如Centura@平台（可 由Applied Materials公司購得），選擇所需的製程反應室， 及（ii)選擇所需的製程參數組別來操作製程反應室，以執 第22貫 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） Γ--.---^-------訂------^ (請先閲讀背面之注意事嚷戎填寫本頁) 經濟部智慧財產局W工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 4〇83β9 Α7 -— ____ 五、發明説明（） 行所需的製程。執行特定製程的製程參數例如製程氣體之 紐合及流量’溫度，壓力，RF偏壓功率能階和磁場功率 能階等電漿條件，冷卻氣體壓力，和反應室壁的溫度等等 都為使用者的製程配方。此配方所指定的參數則利用光筆 /CRT顯示器界面輸入。 監督製程的訊息都由系統控制器的類比輸入和數位 輸入板所提供，而製程控制訊息則由系統控制器34的類 比輸出和數位輸出板來輸出。 氣程序列器副常式4 3 0包含程式碼來接收製程選擇器 常式420已識別的製程反應室和製程參數組，以控制不同 之製程反應室的操作^多個使用者可輸入不同的製程组別 數目和製程反應室數目’或者相同的使用者也可輸入多筆 製程反應室數目，序列器副常式430以所需的順序將選定 的I紅分別執行。序列器副常式4 3 〇最好包括電腦可讀取 的程式碼來執行下列的步驟（i)監督製程反應室的操作來 決定是否反應室已使用過，及（ii)決定什麼樣的製程在已 使用的反應室中已經加以執行，及（Ui)以可使用之製程反 應室和所要執行的製程型態為基礎來執行所需的製程。傳 統上監督製程反應室的方法也可加以利用，例如輪詢法。 當安排所要執行的製程時，序列器副常式43〇可設計成考 慮使用中之製程反應室的現有狀況，並和選定製程所需之 製程條件比較，或和每個使用者所輪人的特殊需求之”時 間，，作比較，或和系統程式設計者所要包括之排程順序相 關的任何參數作比較。 __第 23 頁 本紙張尺®•適用中 1國家標準（CNS )八4祕（210X 297公______ -----τ-----裝---------訂------Μ (請先閱讀背面之注項J填寫本頁} 408369 A7 B7 經濟部智慧財產局員工消費合作社印教 五、發明説明（） 一旦序列器副常式430決定哪個製程反應室和製程組 之组合接著要執行，則序列器副常式430將此特別的製程 絚參數傳給反應室管理副常式44〇來執行此製程，反應室 管理副常式440依照序列器副常式430所決定的製程组來 控制製程反應室I 〇中的多個處理工作。例如，反應室管 理副常式440包含了程式碼來控制製程反應室1〇中的 CVD製程操作《反應室管理副常式440也控制了不同之反 應室元件副常式的執行，其控制了需要執行選擇之製程组 之反應室元件的操作。反應室元件副常式之範例為晶座控 制副常式450，製程氣體控制副常式460，壓力控制副常 式4 7 0，加熱器控制副常式4 8 0 ’和電漿控制副常式4 9 〇。 熟悉此項技藝的人應該可以很容易的瞭解，如果反應室i 〇 中要執行其它的製程，則可包括其它的反應室控制副常 式。 於操作中，反應室管理副常式440依照所執行的特別 製程组選擇性地安排或呼叫製程元件副常式。和序列器副 常式430安排哪個製程反應室1 〇和製程组別將在下次執 行類似地’反應室管理副常式440也以同樣方式安排製程 元件副常式。典型地，反應室管理副常式44〇包括監督不 同反應室元件的步驟’以製程組別所要執行的製程參數為 基礎’決定哪個元件需要操作，並且基於此監督和決定的 步驟來執行反應室元件副常式。 特殊反應室元件副常式的操作現在參考第4圖來描 述。晶座控制放置常式450包含程式碼以控制使用的反應 笫24頁 尺度適用中國國家搮準^CNS ) A4規格（2丨0乂297公€ — --- I----.------^------,訂------線 (請先閣讀背面之注意事項^填寫本頁) 4〇8369 a? B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 主元件將晶圓載入晶座1 2 ’並選擇性的將反應室1 0中的 基材舉起到所需的高度來控制基材和氣體分配喷氣孔i i 之間的距離。當基材載入反應室1 〇中時，晶座丨2會降低 來承接基材，之後，晶座1 2將升到反應室中所需的高度， 並在CVD製程中讓基材和氣體分配噴氣孔η維持一定的 距離。於操作中，晶座控制副常式4 5 〇由反應室管理副常 式440所傳來的製程組參數來控制晶座1 2的移動。 製程氣體控制副常式460具有程式碼以控制製程氣體 的組成及流量。製程氣體控制副常式46〇控制安全關閉閥 門的開啟/關閉位置，並可將質流控制器上/下調整以得到 所需的氣體流動率。製程氣體控制副常式460由反應室管 ί里副常式440而得，其它所有的反應室元件副常式亦為如 此’且接收來自反應室管理副常式有關氣體流量率的製程 參·數。典型地，製程氣體控制副常式460由開啟氣體供應 線來操作，且重覆地⑴讀取需要的質流控制器，（ii)將讀 到的讀數和反應室管理副常式440所接收到的所需流量作 比較’和（iii)調節氣體供應線的流量到所需的程度。再者，· 製程氣體控制副常式460包括了監督不安全之氣體流量的 步驟’並在偵測到不安全的情況時啟動安全關閉閥門， 於某些製程中，氦或氬氣的隋性氣體乃流入反應室10 中以便在反應室製程氣體導入反應室前將反應室中的壓 力穩定。對這些製程來說，製程氣體控制副常式460乃程 式化並包括將隋性氣體流入反應室丨〇 一段時間，以便將 反應室中的壓力穩定，且接著上面所描述的步驟便可加以 _^第25頁 r--；---裝-- (請先閲讀背面之注意事填寫本頁) 訂 線 本紙从適用中關家揉準（CNS ) A4it^ ( 21GX297公釐） A7 B7 40836 五、發明説明（ 實行。另外，當製程氣體由液體前導氣化時，例如由13 $ 三矽烷-2,4,6-三亞甲基（即丨，3,5_三矽烷環己烷），製程氣 體控制副常式460將寫入包括在發泡組合中把氦氣等輸= 氣體在液體前導中泡沐化的步驟。在此類製程中，製程氣 體控制副常式460會調節輪送氣體之流動，發泡器中的壓 力，和發泡器的溫度，以便得到所需的製程氣體流率。如 上面所描述的，所需的製程氣體流率乃傳送到製程氣體控 制副常式460作為製程參數。再者’製程氣體控制副常式 460由進入包含了所需之製程氣體流動率數值的儲存表而 得到所需之製程氣體流動率相關的輸送氣體流動率，發泡 器壓力，和發泡器溫度等步騾。一旦得到所需的數值，則 輸送氣體流率，發泡器壓力和發泡器溫度將加以監控，和 所需的數值比較後並依此調整。 壓力控制副常式470包含了程式碼來調節排故寶浦 3 2中節流閥的開口大小，以控制反應室丨〇中的壓力。節 流閥開口的大小乃加以設定，以便控制反應室的壓力到達 所需的位階，並和全部的製程氣體流量，製程反應室的大 小，和排放幫浦32之設定點壓力有關。當利用壓力控制 βϋ常式470時’則由反應室管理副常式440可得到需要 的，或目的壓力位階參數。壓力控制副常式47〇可由讀取 一或多個連接到反應室中的傳統壓力計來測量反應室 中的壓力，將測量值和目的壓力作比較，則從相當於目的 壓力的儲存壓力表得到PID(比例，積分，和微分）值，並 依壓力表所得到的PID值來調整節流閥。另外，壓力控制 第26頁 --------：---^------ir------^ c请先閲讀背面之注意事項^^寫本頁) 經濟部智慧財產局8工消費合作杜印製 經濟部智毪財產局資工消費合作社印製 4〇8369 A7 ---—_B7___ 五、發明説明（) ' - 副常式470可開啟或關閉節流閥到特殊的開口大小以調節 反應室1 0中的壓力。 加熱器控制副常式480包含程式碼以控制用來加熱晶 座12的加熱模組或幅射熱的溫度，加熱器控制副常式 也由反應室管理副常式440而得’並接收目的溫度和設定 點溫度的參數。加熱器控制副常式48〇測量位於晶座 中熱電耦的輸出電壓而得到溫度’並和設定點溫度作比 較，然後根據結果増加或減少加到熱模組的電流來得到設 定點溫度。此溫度的獲得係從量測到的電壓並參考轉換表 中相對的溫度而得，或利用四階的多項式而計算出溫度。 加熱器控制副常式480將逐漸控制加熱模組的電流升降。 而逐漸的升降電流則可增加此加熱模組的壽命和信賴 度。另外’可包括内建失效和安全模式以偵測製程安全， 且假如反應室1 0没有適當的設定時可關閉加熱模組的操 作。 電漿控制副常式490包含程式碼以設定RF偏壓功率 到反應室10中的製程電極上，且選擇性的設定反應室中 所產生之磁場的能階。類似於先前所描述的反應室元件副 常式，電漿控制副常式49〇也由反應室管理副常式44〇而 來。 上述的C V D系統描述主要乃為例舉之目的’其它的 電漿CVD設備如電極循環共振（ECR)電漿CVD元件，感 應耦合RF鬲密度電漿CVD元件，或其它類似的系統都可 以使用。另外，上述之系統的變化如晶座設計的變化，加 _ __ 第 本^度適用中國围家揉準（CNS )7^7^/297公着了~----- ^---：---^------------Μ (請先聞讀背面之注意事填寫本頁) ^08369 經濟部智慧財產局員工消費合作社印製 A7 B7 五'發明説明（） 熱器設計’ RF功率連接位置和其它的變化都是可能的。 例如’晶圓可由阻抗性加熱晶座所支撐及加熱。本發明之 預處理和形成預處理層的方法並不限制在特定的裝置或 住何特定的電漿激發方法。 三層缝味充填製程中氧化有機矽坑或有機矽氧统介電層 之沉積 本發明之氧化的有機矽烷或有機矽氧烷層可在第5圖 中利用第2圖的PECVD反應室所顯示的三層缝隙充填製 中使用。參考第5圖’放置晶圓200到反應室10中， 且低介電常數的氧化有機矽烷層以包含有機矽烷化合物 及/或有機碎氧烷化合物電漿之PECVD製程沉積205。沉 積步驟205可依照習知技術包括製程反應室丨5中的電容 耦合電漿或電感及電容耦合電漿兩者。隋性氣體如氦氣一 般用於P E C V D沉積中辅助電漿的產生。缝隙充填層接著 利用已知的方法沉積2 1 〇於線狀層上。缝隙充填層最好可 自行平坦化，如自旋聚合物或氧化物以液態形式由甲基梦 烷和過氧化氫反應而沉積。一遮蓋層接著沉積215於缝隙 无填層之上，且最好利用沉積線狀層相同的製程。晶圓接 著從反應室10移除220。 參考第6A-6E圖’三層縫隙充填製程提供了 PECvd 氧化的有機矽烷或有機矽氧烷聚合物線狀層3〇〇。線狀層 300的作用如同接了來的縫陈充填$ 3〇2和底層之基材表 面304和形成於基材表面的金屬線3〇6, 3〇8, 31〇之間的 第28頁 本紙張尺度適用中國國家標準（CNS ) A4劫& j----------：—.---裝— (請先閲讀背面之注^填寫本I ) 訂 線 經濟郜智慧財產局員工消費合作社印製 4〇8369 A7 _______ B7___ 五、發明説明（） ^ 隔離層。縫隙充填層302則由氧化的有機矽烷或有機#〜 烷聚合物的PECVD遮蓋層3 1 2所遮蓋。此製裎利用c 反應室10儲存於電腦控制器34之記憶體38中的電腦^ 式來控制和完成。 參閱第6A圖，PECVD線狀層300利用氧化氣體如 N20，有機矽烷或有機矽氧烷化合物如 CH3SiH & (CHshSiH2，和載氣如氦氣的導入在反應室1〇中沉積。基 材在整個PECVD線狀層沉積過程中維持在大約-201到約 400°C，且最好維持在約-2〇t：到4〇°C的溫度。PECVD線 狀層3 00的沉積係利用有機矽烷及/或有機矽氧烷化合物 在約5sccm到約50 0sccm的流量’和氧化氣體在約5scem 到約200Osccm之製程氣體的混合。製程氣體由隋性氣體 如He ’ Ar ’ Ne ’或較偏隋性氣體的氮氣所攜帶，流量從 約0.2到約2 Ο 1 p m ’且一般不會和薄嫉結合。製程氣體從 约0.2到約20 Torr的壓力時反應，JL最好是小於1〇 Torr , 以便在基材表面304和金屬線306，308’ 310之上形成均 勻的氧化矽層。此反應為電漿增強反應，功率密度範圍則· 從0.05W/cm2到1 OOOW/cm2，最好是小於1 W/cm2的功率 密度’而最佳的範圍則從約0.1到約〇_3W/cm2。 對於8"的單晶圓反應室來說，大約1 3.56MHz的高頻 RF電源功率最好連接到氣體分配系統且以約〖〇到約 500W的功率來驅動，而大約35〇κΗζ到1MHz的低頻RF 電源功率則選擇性的連接到晶座上且以約〇到约100W的 功率驅動。在一較佳實施例中，高頻之RF電源功率則以 ___ 第29頁 { CNS ) ( 210X297/^* ) ~ --------：---装---^--—IT------^ f碕先閲讀背面之注填寫本頁) 經濟部智慧財產局員工涓費合作社印裝 A7 B7 五、發明説明（） 約20W到約25 0W的脈衝RF功率來驅動，且低頻RF電 源功率以約〇到約50W的脈衝功率在丨〇%到3〇%的操 作循環中驅動。脈衝RF功率最好有短期間的循環，而最 佳的循環頻率為小於約200Hz。當高頻RF功率固定時， 功率能階的範圍最好從約20 W到約1 〇〇 w。 氧化的有機矽烷或有機矽氧烷層接著在壓力小於約 1 〇 Torr ’溫度從約1 〇〇。(3到約4501時固化。另外，固化 也可選擇性的在額外的介電層沉積之後才實施。 上述的製程條件對於第6B圖中所示的線狀層300之 後的縫隙充填層302來說’可產生具改善之阻障特性的 PECVD線狀層300的沉積（沉積速率約為每分鐘2〇〇〇人）。 從甲基矽烷所得到的線狀層具足夠的C_H鍵結而可具疏 水性’且具極佳的溼氣阻障特性。疏水的線狀層之沉積對 之後的親水層轉換成疏水層會有令人意想不到的結果。 縫隙充填層302的製程氣體最好為SiH4，CH3SiH3， 或（CH^SiHs和50%重量百分比的過氧化氩（h2〇2)，並且 利用隋性載氣’例如氦氣來加以蒸發並混合。然而，缝隙. 充填層可為任何具有適當之介電常數的介電層。假如副產 物在適當的沉積條件蒸發時也可使用替換的含较化合 物。較佳的替換化合物結合了矽氧烷或矽烷群集，例如， 三甲基矽烷 二矽烷甲烷 雙（甲基矽烷）甲烷 1,2-二矽烷乙烷
第 3CTT 本紙張尺度逋用中菌囷家揉隼（CNS ) A4規格（210X297公釐） --—---1 ΐ —Jill 裝 — ^^1—_ 訂 I 1 線 (請先閲讀背面之注意事填寫本頁) 408369 經 濟 部 智 慧 財 產 局 消 費 合 社 印 製 Α7 五、發明説明（） 2,2 -二矽烷丙烷 1，3,5-三矽烷-2,4,6-三亞甲基（環狀） 1，3-雙（矽烷亞甲基）矽氧烷 雙（丨-甲基二矽氧烷基）甲烷 2,4,6,8-四甲基環四矽氧烷或 1，2 -二矽烷四氟乙烷 製程氣體流量範圍的氦氣為從0-2000 sccin，CH3SiH3 為it 10-200sccm，和h2〇2為從0.1到3g/min»較佳的氣 體流量範圍則為氦氣從1〇〇_50〇 seem，CH3SiH3從20-1 〇〇 seem，和H2〇2從0_ 1到1 g./min。這些流量為反應室的體 積約為5.5到6 5升時的氣體流量。反應室1 〇最好在沉積 縫隙充填層302時維持約〇·2到約5 Torr的壓力。缝隙充 填層302如第6C圖中所示的加以部分固化以便在第6D圖 所示的沉積遮蓋層3 1 2之前移除水氣等溶劑。在反應室i 〇 中的固化則由加入隋性氣體壓力在1 〇 i〇rr以下而完成。 由甲基矽烷所製造的縫隙充填層一般為親水性且具. 有較差的溼氣阻障特性。當其沉積於由甲基矽烷所製造的 線狀層之上時，由甲基矽烷所製造的縫隙充填層竟然為疏 水的且具有極佳的溼氣阻障特性。 參閱第6D圖，在縫隙充填層3〇2沉積之後，本發明 之反應室10則繼續的沉積氧化的有機矽坡或有機矽氧虼 層作為遮蓋層3丨2。參閱第6E圖，在遮蓋層沉積之後，Z 果有需要的話，則將沉積的薄膜層放置於反應爐或另外的 第Μ頁 本紙張尺度適用中國國家揉準（CNS ) Α4規格（2Ι0Χ297公釐} ------；---裝---1--—訂丨.-----線 (請先閱讀背面之注意事f填寫本頁) 經濟部智慧財產局員工消#合作社印製 «08369 A7 _B7 五、發明説明（） 反應室中，溫度保持從約1 00°C到約45 0°C以驅離剩下的 溶劑或水份。而製程條件自然也會根據沉積薄膜層的特性 加以改變β 雙童鑪甚結嫌的沉積 包括氧化的有機矽烷或有機矽氧烷層且作為蝕刻中 止或内金屬介電層之雙重鑲嵌結構則顯示於第7圖中。當 氧化的有機矽烷或有機矽氧烷作為蝕刻中止層時，第一介 電層510先沉積於基材512之上，且接著氧化的有機矽烷 或有機矽氧烷蝕刻中止層514沉積於第一介電層之上並加 以固化。接著將蝕刻中止層514圖案化蝕刻而形成接觸窗 /介層洞開口 5 1 6。第二介電層5 1 8接著於圖案化之蝕刻中 止層上沉積，且接著以傳統方法將其蝕刻圖案化以定義出 内連線520。然後執行單一蚀刻製程以定義内連線一直到 蝕刻中止層，且蝕刻到由圖案化蝕刻中止層所曝露的介電 層以定義出接觸窗/介層洞。 再一次參閱第7圖’鑲嵌結構另外也包括了氧化的有. 機碎烷或有機矽氣烷層作為内金屬介電層。第一介電層 5 1〇 ’最好由氧化的有機矽烷或有機矽氡烷所組成，乃沉 積於基材512之上，且接著一傳統的氧化矽’氮化矽，或 氫化碳化矽蝕刻中止層514沉積於第一介電層之上3蝕刻 中止層接著圖案化以定義接觸窗/介層洞開口 516。第二介 電層518，由氧化的有機矽烷或有機矽氧烷所组成，接著 '儿積於圖案化的蚀刻中止層之上1接著圖案化以定義出 _ 第32頁 本紙張尺度迷用>國國家轉（CNS )----~ n J. i*— I I 裝 I I I I __ 訂 I n n· ^ {請先聞讀背面之注意Ϋ填寫本頁) 408369 A7 ______B7_ 五、發明说明（） 内連線5 2 0。然後執行單一蝕刻製程以定義内連線—直到 蝕刻中止層，且蝕刻到由圖案化蝕刻中止層所曝露的介電 層以定義出接觸窗/介層洞。 依照本發明所製造之較佳雙重鑲嵌結構包括第8h圖 中所示的線狀層，且製造此結構的方法則於第8A_8H圖中 依序加以繪圖描述，其為具有本發明之步驟的基材截面視 圖。 如第8A圖中所示的，最初第一介電層51〇，例如聚 對-二甲笨基，FSG，氧化矽，或類似的材料，乃沉積於基 材5 1 2之上約5000到約1 0000A，並和所製造的結構大小 有關。如第8B圖中所示的，氧化的有機矽烷或有機矽氧 烷材料之低k蝕刻中止層5 14，接著利用低能階的RF功 率沉積約200到約1 000A的厚度到第—介電層之上。然 後，低k蝕刻中止層5 1 4蝕刻圖案化以定義出接觸窗/孔洞 開口 516並曝露出接觸窗/孔洞所要形成的第一介電層510 區域，如第8C圖中所示。低k蝕刻中止層514最好是利 用傳統的微影蝕刻製程並利用氟，碳，和氧離子加以蝕刻· 圖案化。在低k蚀刻中止層5 1 4已經蝕刻且形成接觸窗/ 孔洞之圖案而光阻也移除之後，則第二介電層5 1 8如第8D 圖中所示以約5000到約1 0000A的厚度沉積於蚀刻中止層 514之上。第二介電層518接著圖案化定義出内連線5 20, 且最好是利用傳統的微影製程及光阻層522，如第8E圖中 所示。内連線和接觸窗/介層洞接著利用反應性離子蚀刻或 其它的非等向性蝕刻技術加以蝕刻而定義出金屬層结構 第33百 本紙張尺度適用中國S家標率（CNS〉A4規格（210X2们公釐） ™ (請先閱讀背面之注意事填寫本頁) -裝· • - 丁 _ 經濟部智慧財產局員工消費合作社印製 A7 ----------- B7_ 五、發明説明（） (也就是’内連線和接觸窗/介層洞）’如第8F圖中所示。 4何用來圖案化蝕刻中止層514或第二介電層5丨8的光阻 或其它材質則利用氧氣剝離或其它適合的方法加以移 除。 金屬層結構接f利用導電性材料如鋁，銅，鎢或其組 »疋素形成》現在的趨勢為利用銅來形成較細的導線特 徵且飼具有較低之電阻率（和銘的3.1仁Q-Cm比較起來 ^、有I·7仁Ω-cm)»如第8Θ圖中所示的，適當的阻障層 5 24例如氮化短最好先在金屬層圖案中均勻的沉積以避免 鋼原子遷移到周圍的矽及/或介電材料層。之後，銅526 利用化學氣相沉積法’物理氣相沉積法，電予被覆法，或 其组合方法來形成導電結構^一旦結構中填入銅或其它的 金屬’則其表面將利用化學機械研磨法加以平坦化，如第 8 Η圖中所示。 ^JL3之笳續 經濟部智慧財產局員工消費合作社印製 包括氧化的有機碎坑或有機等氧現廣之雙重鑲嵌緒 構作為前金屬介電層和内金屬介電層之間的黏著層則顯 示於第9圖中。氧化的有機矽烷或有機矽氧烷黏著層612 如傳統的PSG或BPSG層則沉積於前金屬介電層61〇之上 並固化内金屬介電層614,最好是低k介電聚合物層， 接著沉積於黏著層612之上。一傳統的氧化矽或氮化矽蝕 刻層616接著利用傳統方法定義介層洞620。第二内金屬 介電層622’最好是低k介電聚合物層，接著沉積於圖案 __ 第34頁 本紙張尺度遑用中國國家揉準（CNS ) A4規格（21〇χ297公釐） 4〇8369 A7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明説明（ 化lii刻中止層並圖妾介d令呈 _茉化以疋義出内連線。然後執行單一蝕 刻製程以定義内連線一直f丨丨钻 直幻钱刻中止層，且蚀刻到由圖案 化蝕刻中止層所曝露的介骨麻 丨電層以便在金屬化之前定義出 接觸窗/介層洞。 依照本發明之較佳的雙重 * 叉里银欣結構包含黏著層則顯 示於第10H圖中，且產生迚处姐1
座生此、4構的万法則在第1 0A-1 0H 圖中順序描讀出來，其a其只、a . 、：基材疋截面視圖並具有本發明之 實施步驟。 如第10A圖中所示的，具、 最初的弟一内金屬介電層710
如聚對-二甲苯基’ FSG ’氧化 + _ . . M 乳化硬’或類似疋材料，乃沉積 於基材7丨2之上約5000到約1〇〇〇〇八的厚度，並和所製造 的結構大小有關。如第_圖中所示的，氧化的有機矽烷 材料之低k黏著層714，接菩.v接认贫 , „ 伐贵，儿積於第一内金屬介電層710 之上約5 0到約2 0 0 A的厚麼。使社s儿a上Λ 予反傳統的乳化矽或氮化矽蝕刻 中止層716接著沉積於黏著層714之上约5〇到約2〇〇α的 厚度。氧化的有機錢廣之第二低k黏著層718接著沉積 於蝕刻中止層716之上約50到约2〇〇八的厚度。蝕刻中止 唐716和黏著層714’ 718接著加以蝕刻圖案化以定義出 接觸窗/介層洞開口 720並曝露出第一内金屬介電層71〇 位於接觸窗/介層洞的區域，如第1〇c圖中所示。蝕刻中 止層716最好利用傳統之微影製程和蝕刻技術以氟，碳， 和氧離子來蝕刻圖案化。在蝕刻中止層716和黏著層 714, 718已蝕刻形成接觸窗/介層洞圖案且光阻層也剝離 之後，第二内金屬介電層722則沉積於第二黏著層718之 第35頁 本紙張尺度適用中國國家揉準（CNS ) A4说格（210X297公釐） ----7--,---^-------訂------^ (請先閲讀背面之注意事f填寫本頁) 408^69 A7 B7 五、發明説明（ 上約5000到約10_A的厚度，如第i〇d圖中所示。第二 内金屬介電層722接著圖案化而定義出内連線，且最 好利用傳統的微影製程以光阻層726形成，如第t⑽圖中 所^内連線和接觸窗/介層洞接著利用反應性離予触刻或 其它的非等向性㈣技術加以蝕刻而定義出金屬層結構 (也就是，内連線和接觸窗/介層洞），如第1〇F圖中所示。 任何用來圖案化蚀刻中止層716或第二内金屬介電層722 的光阻或其它材質則利用氧氣剝離或其它適合的方法加 以移除。 金屬層結構接著利用導電性材料如銘，銅，爲或其组 合元素形成。現在的趨勢為利用銅來形成較細的導線特 徵’且銅具有較低之電阻率（和銘的31"比較起來 只有1.7^-cm)。如丨10G圖中所示的，適當的阻障層 728例如氛化輕最好先在金屬廣圖案中均勾的沉積以避免 銅原子遷移到周圍的矽及/或介電材料 用化學氣相沉積法，物理氣相沉積法，電子被 組合方法來形成導電結構一I,结構真入銅或其它的金 屬，則其表面將利用化學機械研磨法加以平坦化，如第i〇h 圖中所示。 另一個較佳的雙重鑲嵌結構包含不同介電常數的氧 化矽層以抵抗鍍層之間的串擾訊號，且如第llA_nD圈中 所示加以沉積，此些圖形為基材之截面積視圖且具有本發 第36頁 本紙張尺度逍用中圉國家揉準（CNS ) A4規格（210X297公釐） (請先閣讀背面之注意事f填寫本頁) -裝· 、?! 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4〇S369 A7 _____B7五、發明説明（） 明之實施步驟。 如第11A圖中所示，具有碳含量大於2〇%原子重量百 分比的介層洞等級之介電層81〇乃沉積於基材812之上約 5000到約10000A的厚度，並和所製造之結構大小有關。 介層洞等級之介電層最好利用反應氣體Να和三甲基碎 烷於500W的RF功率能階並在10%的操作循環中沉積。 如第1 1 A圖中所示，介層洞等級之介電層接著以傳統之微 影和蝕刻製程以咼碳材料，並利用氟，碳，和氧離子蝕刻 圖案化以形成介層洞和接觸窗孔洞8丨4。 如第1 1 B圖中所示的，具碳含量小於丨〇%原子重量百 分比之溝渠等級介電層822則沉積於介層洞等級之介電層 810上約5000到約10000a的厚度。溝渠等級之介電層最 好利用反應氣體NaO和甲基矽烷於500W的RF功率能階 並在30%的操作循環中沉積。溝渠等級介電層822接著蝕 刻圖案化以定義内連線824如第1 1B圖中所示，並利用傳 統的對低碳材料有效但對高碳材料無故之微影和蝕刻製 程。任何用來蝕刻介電層之光阻或其它材料則利用化學機 械研磨法，氧氣剥離，或其它適合的方法加以移除^ 金屬層結構接著利用導電性材料如鋁，銅，鶴或其組 合元素形成。現在的趨勢為利用銅來形成較細的導線特 徵，且銅具有較低之電阻率（和鋁的比較起來 只有1.7// Ω -cm)。如第lie圖中所示的，適當的阻障層 828例如氮化钽最好先在金屬層圖案中均句的沉積以避免 銅原子遷移到周圍的矽及/或介電材料層，之後，销元素 ___ _ 第37頁 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公羞_了 ~--- -------.---裝---，---^訂---------線 (請先聞讀背面之注意事項r填寫本頁) A7 _____B7 五、發明説明（） 8 3 0利用化學氣相沉積法，物理氣相沉積法，電子被覆法， 或其組合方法來形成導電結構，如第丨丨D圖中所示。一旦 結構中填入銅或其它的金屬，則其表面將利用化學機械研 磨法或其它的乎坦化方法加以平坦化α 本發明將更以下列之範例加以描述之。 範例
接下來氧化的有機碎燒或有機妙氧燒薄膜層之沉積 範例和展示具有極佳的阻障和黏·著特性。此範例係利用化 學乳相沉積反應主加以貫施’特別是一種稱作” £ ν T U R A
DxZ"的系統’其包括了固態RF符合單元並具有兩部分的 石英處理元件，此兩者皆由Applied Materials,Inc” Santa Clara，California所製造及販賣。 非脈》RF功阜 氧化的二甲基矽烷薄膜係在反應室壓力3.0 Torr，溫 度I5C及下列流入反應室中的氣體而沉積的，其中反應氣 體的流量為. 二甲基矽烷， ，（CH3)2SiH2， 於 5 5 seem 一氡化二氮’ -n2o 於 3 00 seem 氦，He， 於 4000sccm 基材和氣體分配噴灑頭的距離為600mil，且加上2〇W的 _ 第38頁 本紙張尺度逋用中國國家標準（CNS ) A4規格（210Χ2ί»7公釐） (請先聞讀背面之注意事乎4填寫本頁) -裝. -訂 經濟部智慈財產局員工消费合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 高頻功率（13MHz)到噴灑頭作為氧化的二甲基矽烷之電漿 增強沉積。氧化的二甲基矽烷材質具有約2 · 5的介電常數 並為疏水性。 假設的&钏 接下來的假設範例描述了本發明之氧化的有機矽烷 或有機矽氧烷薄膜的沉積。此些範例係為先前的範例中所 描述的化學氣相沉積反應室。 脈衝式RF功率 氡化的1，3,5-三矽烷-2,4,6-三亞甲基（環狀）薄膜係在 反應室壓力3,0 Torr及溫度1 5 °C之下，由下列流入反應室 中的氣體而沉積的，其中： 1，3,5-三矽烷-2,4,6-三亞甲基，-(-3旧2012-)-((^1叫，於 20 seem 一氧化二氮，N〗◦，於 300sccm 乱 ’He 於 4000scciri 基材和氣體分配噴灑頭的距離為6〇〇mU，並加上50W 的脈衝尚頻功率（13MHz)到噴i麗頭以作為ι，3,5·三矽坑· 2,4,6-三亞曱基層之電漿増強沉積。 腺衝式RF功率 氧化的1，3 -二曱基二碎氧烷薄膜於反應室壓力30 ^_ 第39頁 ^紙張尺度通用中國國家標準（CNS ) A4规格（210X297公釐) -------<---裝------一訂--^-----線 {請先閱讀背面之注意事項再填寫本頁) 408369 A7 B7 五、發明説明（） Torr和1 5 °C的溫度下，由流入反應室中的反應氣體而沉 積，其中： U-二甲基二矽氧烷,CH3-SiH2-0-SiH2-CH3,於 一氧化二氮，N20，於 氦，He，於 3 Osccm 3 OOsccm 4000sccm 基材和氣體分配噴灑頭的距離為600mil，並加上50W的 脈衝高頻功率（1 3 MHz)到噴灑頭以作為氧化的二曱基二矽 氧烷層之電漿增強沉積。 微波/RF功率 氧化的1,3 -二甲基二矽氧烷薄膜係在反應室壓力 3-OTorr，溫度15 °C時，由流入反應室中的反應氣體而沉 積，其中： 請 先 聞 讀 背 & 之 注 項， 苒 填 寫 本 頁 裝 訂 經濟部智慧財產局員工涓費合作社印製 1,3-二甲基二矽氧坑（CH3-SiH2-0-SiH2-CH3)於 30sccm ' 一氧化二氣，Ν20，於 300sccm 氦，He,於 4000sccm 於進入反應室之前，一氧化二氮先在微波器中以 2000W的微波能量解離。基材則和氣體分配噴灑頭距離 600mU ’且50W的高頻RF功率（13MHz)則在循環時加到 噴灑頭上作為氧化的二甲基二矽氧烷層之電漿增強沉 第40頁 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^08369 a? B7 五、發明説明（） 積。每個循環則在30°/。的循環中提供RF功率。 述 例的所 施同下 實不如 佳多則 較許圍 的有範 W 仍 # 發下專 本疇請 為d 申 4Λ-ε ΐ 只—之 例I明 範基發 述之本 上明而 發。 本施 而 然 施 實 離實 偏以 不據 在可 例 ----：—；---t.— (請先聞讀背面之注意事is4填寫本頁) -丁 經濟部智慧財產局員工消費合作社印轂 頁 1 4 第 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）

Claims (1)

  1. ABCD 4〇8369 專利範圍 ----—1---裝— ·f (请先閱讀背面之注意事項-?4寫本買) • ~'種沉積低介電常數薄膜的製程，該製程至少包含將一 種或多種含碳之矽化合物和氧化氣體反應，並在固定的 功率能階約1 0W到約200W，或脈衝RF功率能階從 约2〇w到約500W時反應。 2’如中請專利範固第1項所述之製程，其中在每個硬化合 物中的每個矽原子乃和一或多個碳原子和至少—個氮 原予鍵結，且其中該相同分子中的兩個或多個矽原子係 由不超過兩個碳原子或不超過一個氧原子所分隔。 輕濟部中央樣準局員工消費合作杜印袋 如中請專利範圍第1項所述之製程，其中上述之矽化合 物係選自甲基矽烷、二甲基矽烷、三平基矽烷、二矽院 甲塊、雙（甲基矽烷）甲烷、1，2-二矽烷乙烷、1,2-雙（甲 基矽烷）乙烷、2,2-二矽烷丙烷、1，3,5-三矽烷-2,4,6-三 亞甲基、1,3-二曱基二矽氧烷、1，1，3,3-四甲基二矽氡 坡、1,3-雙（矽亞甲基）二矽氧烷、雙（1-甲基二矽氧烷基） 甲坡、2,2-雙（1-甲基二矽氧烷基）丙烷、2，4,6,8, 10-五甲 基環五矽氧烷、1，3,5,7-四矽烷-2,6·二氧基，4,8-二亞甲 基、2,4,6 -三碎燒四氫也喃、2,5 -二碎燒四氫咬味、氟化 碳衍生物及其組合。 4.如_請專利範圍第1項所述之製程，其中上述之氧化氣 體在和矽化合物混合之前就已解離。 第42瓦 本紙張尺度逋用中國國家揉準（CNS ) Α4規格（2〖〇Χ297公釐） 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 5.—種沉積低介電常數薄膜之製程’該製程至少包含： 沉積均勻之線狀層於圖案化的金屬層上，其製程氣 雜至少包含一或多種碎化合物及氧化氣體，固定的RJ7 功率能階從約1 〇W到約2〇〇W或脈衝RF功率能階從約 20W到約500W，其中该矽化合物至少包含了碳；及 沉積縫隙充填層於線狀層之上。 6 ·如申請專利範圍第5項所述之製程，其中在每個矽化合 物中的每個矽原子乃鍵結到一或兩個碳原子和至少一 個氫原子上，且其中於相同分子中的矽原子並非被兩個 以上的破原子或一個以上的氧原子所分隔。 7.如申請專利範圍第5項所述之製程，其中上述之矽化合 物係選自甲基矽烷、二甲基矽烷、三甲基矽烷、二矽烷 甲烷、雙（甲基矽烷）甲烷、1,2-二矽烷乙烷' ι，2-雙（甲 基矽烷）乙烷、2,2-二矽烷丙烷、1，3,5-三矽烷-2,4,6-三 亞甲基、1,3-二甲基二矽氧烷、1，1，3,3-四甲基二矽氧 烷、1，3-雙（矽亞甲基）二矽氧烷、雙（1-甲基二矽氧烷基） 曱烷、2,2-雙（1-甲基二矽氧虼基）丙烷、2,4,6,8，10-五甲 基環五碎氧娱》、1，3,5,7 -四梦境>-2,6 -二氧基-4,8 -二亞甲 基、2,4,6-三碎燒四氫也南、2，5·二碎燒四氫吹喃、氟化 碳的衍生物及其组合。 8-如申請專利範圍第5項所述之製程，其中上述之氧化氣 第43頁 本紙張尺度適用中國國家標準（CNS ) Α4洗格（210Χ297公釐） ~ -------------裝------訂------線 (谙先閲讀背面之注意事項再填寫本頁) ^08369 8 8 8 8 ABCD 經濟部智慧財產局員工涓費合作社印製 六、申請專利範圍 體在和該矽化合物混合前就已解離。 9.如申請專利範圍第5項所述之製程，其中上述之缝隙充 填層由包含矽烷的化合物和過氧化氫之反應而沉積。 1 0.如申請專利範圍第5項所述之製程，其中更包含了沉積 遮蓋層於縫隙充填層之上，而其製程氣體至少包含矽化 合物和氧化氣體。 1 1 · 一種基材製程系統，該系統至少包含： 一容器，其至少包含反應區，在反應區中放置基材 的基材承載器，和真空系統； 一氣體分配系統，其連接到容器之反應區中以提供 一種或多種有機矽化合物和氧化氣體； 一 RF產生器，其乃耦合到氣體分配系統而在反應區 中產生電漿： 一控制器，其至少包含了電腦以控制容器，氣體分. 配系統，和RF產生器；及 一記憶體，其耦合到控制器中且至少包含了電腦可 使用之介質，此介質至少包含電腦可讀取之程式碼，以 便選擇至少包含將一種或多種有機矽化合物和氧化氣 體於固定的RF功率能階從約10到約200W或脈衝RF 功率能階從約20到約500W下反應的製程。 第44貫 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家樣率（CNS) A4規格（210X29?公釐） 408369 經濟部智慧財產局員工消費合作社印製 A8 B8 CS D8六、申請專利範圍 1 2.如申請專利範圍第11項所述之基材製程系統，其中更 包含了電腦可讀取程式碼以沉積雙重鑲嵌結構。 1 3 . —種基材製程系統，該系統至少包含： 一容器，其至少包含反應區，在反應區中放置基材 的基材承載器，和真空系統； 一氣體分配系統，其連接到容器之反應區中以提供 一種或多種有機矽化合物和氧化氣體； 一微波反應室，係連接到反應區的有機矽化合物之 源頭； 一 RF產生器，其乃耦合到氣體分配系統而在反應區 中產生電漿； 一控制器，其至少包含了電腦以控制容器，氣體分 配系統，和RF產生器；及 一記憶體，其耦合到控制器中且至少包含了電腦可 使用之介質，此介質至少包含電腦可讀取之程式碼，以 便選擇從至少包含有機矽化合物和氧化氣體之製程氣 體，於固定的RF功率能階從約1 0W到約200W或脈衝 RF功率能階從約20W到約500W時沉積含碳介電層的 製程。 1 4.如申請專利範圍第13項所述之系統，其中更包含了電 腦可讀取之程式碼以沉積缝隙充填層於該介電層之 上，及一遮蓋層利用至少包含有機矽化合物之製程氣體 第45頁 , - 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) 本紙悵尺度適用中國國家標準（CNS } A4規格（210X297公釐） ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 沉積於該縫隙充填層之上。 1 5. —種形成雙重鑲嵌結構之方法，該方法至少包含： 沉積介層洞等級之介電層薄膜於基材上*其碳含量 大於約20%原子重量百分比，且由一種或多種有機珍化 合物和氧化氣體反應而沉積； 蝕刻圖案化該介層洞等級之介電層薄膜以形成介層 洞； 沉積溝渠等級之介電層薄膜於介層洞等級之介電層 薄膜上，且碳含量小於約I 0%原子重量百分比； 蝕刻圖案化該溝渠等級之介電層薄膜以形成水平的 内連線。 1 6.如申請專利範園第1 5項所述之方法，其中上述之氧化 氣體在和有機矽化合物混合前即已解離。 1 7. —種雙重鑲嵌結構，該結構至少包含： 第一介電層，其至少包含一或多個垂直内連線；及 第二介電層，其和該第一介電層接觸且定義出一或 多個水平内連線。 18.如申請專利範圍第17項所述之結構，其中上述之第一 和第二介電層具有不同之介電常數。 第46頁 本紙張尺度適用中國國家揉準（CNS ) A4说格（210X297公釐） ------------^------1T-------^ (請先閱讀背面之注意事項再填寫本頁) 408369 AS B8 C8 D8 六、申請專利範圍 1 9 .如申請專利範圍第1 8項所述之結構，其中上述之第一 介電層至少包含氧化之有機硬化合物，且碳含量大於約 2 0%的原子重量百分比。 20.如申請專利範圍第1 9項所述之結構，其中上述之第二 介電層至少包含氧化之有機矽化合物，且碳含量小於約 10%的原子重量百分比。 Λ 》 裝 . 訂 線 (請先閱讀背面之注意事項月填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張疋度適用中a國家樓準（CNS ) Α4規冰（210Χ297公釐）
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US09/114,682 US6072227A (en) 1998-02-11 1998-07-13 Low power method of depositing a low k dielectric with organo silane
US09/162,915 US6287990B1 (en) 1998-02-11 1998-09-29 CVD plasma assisted low dielectric constant films
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