|
US10378106B2
(en)
|
2008-11-14 |
2019-08-13 |
Asm Ip Holding B.V. |
Method of forming insulation film by modified PEALD
|
|
US9394608B2
(en)
|
2009-04-06 |
2016-07-19 |
Asm America, Inc. |
Semiconductor processing reactor and components thereof
|
|
US8802201B2
(en)
|
2009-08-14 |
2014-08-12 |
Asm America, Inc. |
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
|
|
TWI509695B
(zh)
|
2010-06-10 |
2015-11-21 |
Asm Int |
使膜選擇性沈積於基板上的方法
|
|
JP5541223B2
(ja)
*
|
2010-07-29 |
2014-07-09 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
US8945305B2
(en)
*
|
2010-08-31 |
2015-02-03 |
Micron Technology, Inc. |
Methods of selectively forming a material using parylene coating
|
|
US9312155B2
(en)
|
2011-06-06 |
2016-04-12 |
Asm Japan K.K. |
High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
|
|
US9793148B2
(en)
|
2011-06-22 |
2017-10-17 |
Asm Japan K.K. |
Method for positioning wafers in multiple wafer transport
|
|
US10364496B2
(en)
|
2011-06-27 |
2019-07-30 |
Asm Ip Holding B.V. |
Dual section module having shared and unshared mass flow controllers
|
|
US10854498B2
(en)
|
2011-07-15 |
2020-12-01 |
Asm Ip Holding B.V. |
Wafer-supporting device and method for producing same
|
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
|
US20130064973A1
(en)
*
|
2011-09-09 |
2013-03-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Chamber Conditioning Method
|
|
US9017481B1
(en)
|
2011-10-28 |
2015-04-28 |
Asm America, Inc. |
Process feed management for semiconductor substrate processing
|
|
US9112003B2
(en)
|
2011-12-09 |
2015-08-18 |
Asm International N.V. |
Selective formation of metallic films on metallic surfaces
|
|
US8946830B2
(en)
|
2012-04-04 |
2015-02-03 |
Asm Ip Holdings B.V. |
Metal oxide protective layer for a semiconductor device
|
|
US9558931B2
(en)
|
2012-07-27 |
2017-01-31 |
Asm Ip Holding B.V. |
System and method for gas-phase sulfur passivation of a semiconductor surface
|
|
US9659799B2
(en)
|
2012-08-28 |
2017-05-23 |
Asm Ip Holding B.V. |
Systems and methods for dynamic semiconductor process scheduling
|
|
US9021985B2
(en)
|
2012-09-12 |
2015-05-05 |
Asm Ip Holdings B.V. |
Process gas management for an inductively-coupled plasma deposition reactor
|
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
|
TWI627667B
(zh)
|
2012-11-26 |
2018-06-21 |
應用材料股份有限公司 |
用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
|
|
US9640416B2
(en)
|
2012-12-26 |
2017-05-02 |
Asm Ip Holding B.V. |
Single-and dual-chamber module-attachable wafer-handling chamber
|
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
|
US20140242811A1
(en)
*
|
2013-02-27 |
2014-08-28 |
United Microelectronics Corp. |
Atomic layer deposition method
|
|
US9589770B2
(en)
|
2013-03-08 |
2017-03-07 |
Asm Ip Holding B.V. |
Method and systems for in-situ formation of intermediate reactive species
|
|
US9484191B2
(en)
|
2013-03-08 |
2016-11-01 |
Asm Ip Holding B.V. |
Pulsed remote plasma method and system
|
|
US8993054B2
(en)
*
|
2013-07-12 |
2015-03-31 |
Asm Ip Holding B.V. |
Method and system to reduce outgassing in a reaction chamber
|
|
US9018111B2
(en)
|
2013-07-22 |
2015-04-28 |
Asm Ip Holding B.V. |
Semiconductor reaction chamber with plasma capabilities
|
|
US9793115B2
(en)
|
2013-08-14 |
2017-10-17 |
Asm Ip Holding B.V. |
Structures and devices including germanium-tin films and methods of forming same
|
|
US9240412B2
(en)
|
2013-09-27 |
2016-01-19 |
Asm Ip Holding B.V. |
Semiconductor structure and device and methods of forming same using selective epitaxial process
|
|
EP2854158B1
(en)
*
|
2013-09-27 |
2019-07-10 |
IMEC vzw |
Layer deposition on III-V semiconductors
|
|
US9556516B2
(en)
|
2013-10-09 |
2017-01-31 |
ASM IP Holding B.V |
Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
|
|
US9605343B2
(en)
|
2013-11-13 |
2017-03-28 |
Asm Ip Holding B.V. |
Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
|
|
US9745658B2
(en)
|
2013-11-25 |
2017-08-29 |
Lam Research Corporation |
Chamber undercoat preparation method for low temperature ALD films
|
|
US10179947B2
(en)
|
2013-11-26 |
2019-01-15 |
Asm Ip Holding B.V. |
Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
|
|
TWI661072B
(zh)
|
2014-02-04 |
2019-06-01 |
荷蘭商Ａｓｍ Ｉｐ控股公司 |
金屬、金屬氧化物與介電質的選擇性沈積
|
|
US10683571B2
(en)
|
2014-02-25 |
2020-06-16 |
Asm Ip Holding B.V. |
Gas supply manifold and method of supplying gases to chamber using same
|
|
CN106062245B
(zh)
*
|
2014-03-03 |
2020-04-07 |
皮考逊公司 |
用ald涂层保护气体容器的内部
|
|
US9447498B2
(en)
|
2014-03-18 |
2016-09-20 |
Asm Ip Holding B.V. |
Method for performing uniform processing in gas system-sharing multiple reaction chambers
|
|
US10167557B2
(en)
|
2014-03-18 |
2019-01-01 |
Asm Ip Holding B.V. |
Gas distribution system, reactor including the system, and methods of using the same
|
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
|
US10047435B2
(en)
|
2014-04-16 |
2018-08-14 |
Asm Ip Holding B.V. |
Dual selective deposition
|
|
CN105019019B
(zh)
*
|
2014-04-30 |
2019-04-19 |
应用材料公司 |
用于选择性外延硅沟槽填充的方法
|
|
JP6263450B2
(ja)
*
|
2014-07-24 |
2018-01-17 |
東京エレクトロン株式会社 |
有機単分子膜形成方法
|
|
US10858737B2
(en)
|
2014-07-28 |
2020-12-08 |
Asm Ip Holding B.V. |
Showerhead assembly and components thereof
|
|
US9548188B2
(en)
|
2014-07-30 |
2017-01-17 |
Lam Research Corporation |
Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
|
|
US9543180B2
(en)
|
2014-08-01 |
2017-01-10 |
Asm Ip Holding B.V. |
Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
|
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
|
JP2016066644A
(ja)
|
2014-09-22 |
2016-04-28 |
株式会社東芝 |
記憶装置の製造方法
|
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
|
US9657845B2
(en)
|
2014-10-07 |
2017-05-23 |
Asm Ip Holding B.V. |
Variable conductance gas distribution apparatus and method
|
|
KR102300403B1
(ko)
|
2014-11-19 |
2021-09-09 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
|
KR102263121B1
(ko)
|
2014-12-22 |
2021-06-09 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 및 그 제조 방법
|
|
KR102185458B1
(ko)
*
|
2015-02-03 |
2020-12-03 |
에이에스엠 아이피 홀딩 비.브이. |
선택적 퇴적
|
|
US9478415B2
(en)
|
2015-02-13 |
2016-10-25 |
Asm Ip Holding B.V. |
Method for forming film having low resistance and shallow junction depth
|
|
US9490145B2
(en)
|
2015-02-23 |
2016-11-08 |
Asm Ip Holding B.V. |
Removal of surface passivation
|
|
KR20170125876A
(ko)
*
|
2015-02-26 |
2017-11-15 |
어플라이드 머티어리얼스, 인코포레이티드 |
자기-조립 단분자층들을 사용하는 선택적인 유전체 증착을 위한 방법들
|
|
US10529542B2
(en)
|
2015-03-11 |
2020-01-07 |
Asm Ip Holdings B.V. |
Cross-flow reactor and method
|
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
|
JP6346115B2
(ja)
*
|
2015-03-24 |
2018-06-20 |
東芝メモリ株式会社 |
パターン形成方法
|
|
US9828672B2
(en)
|
2015-03-26 |
2017-11-28 |
Lam Research Corporation |
Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
|
|
US10023956B2
(en)
|
2015-04-09 |
2018-07-17 |
Lam Research Corporation |
Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
|
|
TWI717260B
(zh)
*
|
2015-05-01 |
2021-01-21 |
美商應用材料股份有限公司 |
使用表面封端化學性質的薄膜介電質之選擇性沉積
|
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
|
US10600673B2
(en)
|
2015-07-07 |
2020-03-24 |
Asm Ip Holding B.V. |
Magnetic susceptor to baseplate seal
|
|
US10043661B2
(en)
|
2015-07-13 |
2018-08-07 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
|
US9899291B2
(en)
|
2015-07-13 |
2018-02-20 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
|
US10083836B2
(en)
|
2015-07-24 |
2018-09-25 |
Asm Ip Holding B.V. |
Formation of boron-doped titanium metal films with high work function
|
|
US10428421B2
(en)
|
2015-08-03 |
2019-10-01 |
Asm Ip Holding B.V. |
Selective deposition on metal or metallic surfaces relative to dielectric surfaces
|
|
US10087525B2
(en)
|
2015-08-04 |
2018-10-02 |
Asm Ip Holding B.V. |
Variable gap hard stop design
|
|
US10121699B2
(en)
|
2015-08-05 |
2018-11-06 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
|
US10566185B2
(en)
|
2015-08-05 |
2020-02-18 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
|
US9647114B2
(en)
|
2015-08-14 |
2017-05-09 |
Asm Ip Holding B.V. |
Methods of forming highly p-type doped germanium tin films and structures and devices including the films
|
|
US9711345B2
(en)
|
2015-08-25 |
2017-07-18 |
Asm Ip Holding B.V. |
Method for forming aluminum nitride-based film by PEALD
|
|
US10811388B2
(en)
|
2015-09-28 |
2020-10-20 |
Invensas Corporation |
Capacitive coupling in a direct-bonded interface for microelectronic devices
|
|
US10032751B2
(en)
*
|
2015-09-28 |
2018-07-24 |
Invensas Corporation |
Ultrathin layer for forming a capacitive interface between joined integrated circuit components
|
|
US9960072B2
(en)
|
2015-09-29 |
2018-05-01 |
Asm Ip Holding B.V. |
Variable adjustment for precise matching of multiple chamber cavity housings
|
|
KR102054605B1
(ko)
|
2015-10-04 |
2019-12-10 |
어플라이드 머티어리얼스, 인코포레이티드 |
고 종횡비 피처들을 위한 건조 프로세스
|
|
JP6703100B2
(ja)
|
2015-10-04 |
2020-06-03 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
容積が縮小された処理チャンバ
|
|
KR102062873B1
(ko)
|
2015-10-04 |
2020-01-06 |
어플라이드 머티어리얼스, 인코포레이티드 |
작은 열 질량의 가압 챔버
|
|
CN116207033A
(zh)
|
2015-10-04 |
2023-06-02 |
应用材料公司 |
基板支撑件和挡板设备
|
|
US10814349B2
(en)
|
2015-10-09 |
2020-10-27 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
|
US10343186B2
(en)
|
2015-10-09 |
2019-07-09 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
|
US10695794B2
(en)
|
2015-10-09 |
2020-06-30 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
|
US9909214B2
(en)
|
2015-10-15 |
2018-03-06 |
Asm Ip Holding B.V. |
Method for depositing dielectric film in trenches by PEALD
|
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
|
US10316406B2
(en)
|
2015-10-21 |
2019-06-11 |
Ultratech, Inc. |
Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
|
|
US10322384B2
(en)
|
2015-11-09 |
2019-06-18 |
Asm Ip Holding B.V. |
Counter flow mixer for process chamber
|
|
US9455138B1
(en)
|
2015-11-10 |
2016-09-27 |
Asm Ip Holding B.V. |
Method for forming dielectric film in trenches by PEALD using H-containing gas
|
|
US9905420B2
(en)
|
2015-12-01 |
2018-02-27 |
Asm Ip Holding B.V. |
Methods of forming silicon germanium tin films and structures and devices including the films
|
|
CN108292588B
(zh)
*
|
2015-12-04 |
2022-02-18 |
应用材料公司 |
用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
|
|
US9607837B1
(en)
|
2015-12-21 |
2017-03-28 |
Asm Ip Holding B.V. |
Method for forming silicon oxide cap layer for solid state diffusion process
|
|
US9627221B1
(en)
|
2015-12-28 |
2017-04-18 |
Asm Ip Holding B.V. |
Continuous process incorporating atomic layer etching
|
|
US9735024B2
(en)
|
2015-12-28 |
2017-08-15 |
Asm Ip Holding B.V. |
Method of atomic layer etching using functional group-containing fluorocarbon
|
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
|
US10468251B2
(en)
|
2016-02-19 |
2019-11-05 |
Asm Ip Holding B.V. |
Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
|
|
US9754779B1
(en)
|
2016-02-19 |
2017-09-05 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
|
CN109075021B
(zh)
|
2016-03-03 |
2023-09-05 |
应用材料公司 |
利用间歇性空气-水暴露的改良自组装单层阻挡
|
|
US9981286B2
(en)
|
2016-03-08 |
2018-05-29 |
Asm Ip Holding B.V. |
Selective formation of metal silicides
|
|
US10501866B2
(en)
|
2016-03-09 |
2019-12-10 |
Asm Ip Holding B.V. |
Gas distribution apparatus for improved film uniformity in an epitaxial system
|
|
WO2017161236A1
(en)
|
2016-03-17 |
2017-09-21 |
Applied Materials, Inc. |
Methods for gapfill in high aspect ratio structures
|
|
US10343920B2
(en)
|
2016-03-18 |
2019-07-09 |
Asm Ip Holding B.V. |
Aligned carbon nanotubes
|
|
US9892913B2
(en)
|
2016-03-24 |
2018-02-13 |
Asm Ip Holding B.V. |
Radial and thickness control via biased multi-port injection settings
|
|
US10551741B2
(en)
|
2016-04-18 |
2020-02-04 |
Asm Ip Holding B.V. |
Method of forming a directed self-assembled layer on a substrate
|
|
US10204782B2
(en)
|
2016-04-18 |
2019-02-12 |
Imec Vzw |
Combined anneal and selective deposition process
|
|
US10087522B2
(en)
|
2016-04-21 |
2018-10-02 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
|
US10865475B2
(en)
|
2016-04-21 |
2020-12-15 |
Asm Ip Holding B.V. |
Deposition of metal borides and silicides
|
|
KR20180128515A
(ko)
|
2016-04-25 |
2018-12-03 |
어플라이드 머티어리얼스, 인코포레이티드 |
자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버
|
|
US10032628B2
(en)
|
2016-05-02 |
2018-07-24 |
Asm Ip Holding B.V. |
Source/drain performance through conformal solid state doping
|
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
|
JP6573575B2
(ja)
*
|
2016-05-02 |
2019-09-11 |
東京エレクトロン株式会社 |
凹部の埋め込み方法
|
|
US11081342B2
(en)
|
2016-05-05 |
2021-08-03 |
Asm Ip Holding B.V. |
Selective deposition using hydrophobic precursors
|
|
US10366878B2
(en)
*
|
2016-05-06 |
2019-07-30 |
Applied Materials, Inc. |
Selective deposition through formation of self-assembled monolayers
|
|
KR102592471B1
(ko)
|
2016-05-17 |
2023-10-20 |
에이에스엠 아이피 홀딩 비.브이. |
금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
|
|
DE102016109485B4
(de)
*
|
2016-05-24 |
2025-12-04 |
Pictiva Displays International Limited |
Verfahren zum herstellen eines optoelektronischen bauelements, optoelektronisches bauelement und schutzschicht
|
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
|
US10373820B2
(en)
|
2016-06-01 |
2019-08-06 |
Asm Ip Holding B.V. |
Deposition of organic films
|
|
US10453701B2
(en)
|
2016-06-01 |
2019-10-22 |
Asm Ip Holding B.V. |
Deposition of organic films
|
|
US10358715B2
(en)
*
|
2016-06-03 |
2019-07-23 |
Applied Materials, Inc. |
Integrated cluster tool for selective area deposition
|
|
US9803277B1
(en)
|
2016-06-08 |
2017-10-31 |
Asm Ip Holding B.V. |
Reaction chamber passivation and selective deposition of metallic films
|
|
US9805974B1
(en)
|
2016-06-08 |
2017-10-31 |
Asm Ip Holding B.V. |
Selective deposition of metallic films
|
|
US10014212B2
(en)
|
2016-06-08 |
2018-07-03 |
Asm Ip Holding B.V. |
Selective deposition of metallic films
|
|
US10388509B2
(en)
|
2016-06-28 |
2019-08-20 |
Asm Ip Holding B.V. |
Formation of epitaxial layers via dislocation filtering
|
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
|
US9793135B1
(en)
|
2016-07-14 |
2017-10-17 |
ASM IP Holding B.V |
Method of cyclic dry etching using etchant film
|
|
US10714385B2
(en)
|
2016-07-19 |
2020-07-14 |
Asm Ip Holding B.V. |
Selective deposition of tungsten
|
|
KR102354490B1
(ko)
|
2016-07-27 |
2022-01-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US10177025B2
(en)
|
2016-07-28 |
2019-01-08 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US10395919B2
(en)
|
2016-07-28 |
2019-08-27 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
|
US10090316B2
(en)
|
2016-09-01 |
2018-10-02 |
Asm Ip Holding B.V. |
3D stacked multilayer semiconductor memory using doped select transistor channel
|
|
US10068764B2
(en)
*
|
2016-09-13 |
2018-09-04 |
Tokyo Electron Limited |
Selective metal oxide deposition using a self-assembled monolayer surface pretreatment
|
|
US10410943B2
(en)
|
2016-10-13 |
2019-09-10 |
Asm Ip Holding B.V. |
Method for passivating a surface of a semiconductor and related systems
|
|
US10643826B2
(en)
|
2016-10-26 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for thermally calibrating reaction chambers
|
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
US10643904B2
(en)
|
2016-11-01 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for forming a semiconductor device and related semiconductor device structures
|
|
US10435790B2
(en)
|
2016-11-01 |
2019-10-08 |
Asm Ip Holding B.V. |
Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
|
|
US10134757B2
(en)
|
2016-11-07 |
2018-11-20 |
Asm Ip Holding B.V. |
Method of processing a substrate and a device manufactured by using the method
|
|
KR102546317B1
(ko)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
|
US10340135B2
(en)
|
2016-11-28 |
2019-07-02 |
Asm Ip Holding B.V. |
Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
|
|
US11430656B2
(en)
|
2016-11-29 |
2022-08-30 |
Asm Ip Holding B.V. |
Deposition of oxide thin films
|
|
KR102762543B1
(ko)
|
2016-12-14 |
2025-02-05 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US9916980B1
(en)
|
2016-12-15 |
2018-03-13 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
|
US10211099B2
(en)
|
2016-12-19 |
2019-02-19 |
Lam Research Corporation |
Chamber conditioning for remote plasma process
|
|
KR102700194B1
(ko)
|
2016-12-19 |
2024-08-28 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US10867788B2
(en)
|
2016-12-28 |
2020-12-15 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
|
US10504723B2
(en)
*
|
2017-01-05 |
2019-12-10 |
Applied Materials, Inc. |
Method and apparatus for selective epitaxy
|
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
|
TWI700750B
(zh)
*
|
2017-01-24 |
2020-08-01 |
美商應用材料股份有限公司 |
用於介電薄膜的選擇性沉積之方法及設備
|
|
TWI739984B
(zh)
*
|
2017-01-31 |
2021-09-21 |
美商應用材料股份有限公司 |
就圖案化應用進行選擇性沉積之方案
|
|
US10655221B2
(en)
|
2017-02-09 |
2020-05-19 |
Asm Ip Holding B.V. |
Method for depositing oxide film by thermal ALD and PEALD
|
|
JP7169072B2
(ja)
*
|
2017-02-14 |
2022-11-10 |
エーエスエム アイピー ホールディング ビー．ブイ． |
選択的パッシベーションおよび選択的堆積
|
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
|
US10224224B2
(en)
|
2017-03-10 |
2019-03-05 |
Micromaterials, LLC |
High pressure wafer processing systems and related methods
|
|
US10043656B1
(en)
*
|
2017-03-10 |
2018-08-07 |
Lam Research Corporation |
Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
|
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
|
US10283353B2
(en)
|
2017-03-29 |
2019-05-07 |
Asm Ip Holding B.V. |
Method of reforming insulating film deposited on substrate with recess pattern
|
|
US10103040B1
(en)
|
2017-03-31 |
2018-10-16 |
Asm Ip Holding B.V. |
Apparatus and method for manufacturing a semiconductor device
|
|
USD830981S1
(en)
|
2017-04-07 |
2018-10-16 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate processing apparatus
|
|
TWI805162B
(zh)
*
|
2017-04-18 |
2023-06-11 |
日商東京威力科創股份有限公司 |
被處理體之處理裝置
|
|
US20180308685A1
(en)
*
|
2017-04-21 |
2018-10-25 |
Applied Materials, Inc. |
Low temperature selective epitaxial silicon deposition
|
|
KR102457289B1
(ko)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
|
US11501965B2
(en)
|
2017-05-05 |
2022-11-15 |
Asm Ip Holding B.V. |
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
|
|
US10446393B2
(en)
|
2017-05-08 |
2019-10-15 |
Asm Ip Holding B.V. |
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
|
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
|
JP7210092B2
(ja)
*
|
2017-05-15 |
2023-01-23 |
東京エレクトロン株式会社 |
高度なパターン形成用途のためのインサイチュでの選択的堆積及びエッチング
|
|
JP7183187B2
(ja)
|
2017-05-16 |
2022-12-05 |
エーエスエム アイピー ホールディング ビー．ブイ． |
誘電体上の酸化物の選択的ｐｅａｌｄ
|
|
US10847360B2
(en)
|
2017-05-25 |
2020-11-24 |
Applied Materials, Inc. |
High pressure treatment of silicon nitride film
|
|
US10622214B2
(en)
|
2017-05-25 |
2020-04-14 |
Applied Materials, Inc. |
Tungsten defluorination by high pressure treatment
|
|
KR102271771B1
(ko)
*
|
2017-05-25 |
2021-07-01 |
삼성전자주식회사 |
박막 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
|
|
US10504742B2
(en)
|
2017-05-31 |
2019-12-10 |
Asm Ip Holding B.V. |
Method of atomic layer etching using hydrogen plasma
|
|
KR102574914B1
(ko)
|
2017-06-02 |
2023-09-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
보론 카바이드 하드마스크의 건식 스트리핑
|
|
US10886123B2
(en)
|
2017-06-02 |
2021-01-05 |
Asm Ip Holding B.V. |
Methods for forming low temperature semiconductor layers and related semiconductor device structures
|
|
TWI850084B
(zh)
|
2017-06-14 |
2024-07-21 |
美商應用材料股份有限公司 |
用於達成無缺陷自組裝單層的晶圓處理設備
|
|
US10157740B1
(en)
*
|
2017-06-15 |
2018-12-18 |
Applied Materials, Inc. |
Selective deposition process utilizing polymer structure deactivation process
|
|
US12040200B2
(en)
|
2017-06-20 |
2024-07-16 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
|
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
|
US10900120B2
(en)
|
2017-07-14 |
2021-01-26 |
Asm Ip Holding B.V. |
Passivation against vapor deposition
|
|
TWI804369B
(zh)
*
|
2017-07-14 |
2023-06-01 |
荷蘭商Ａｓｍ Ｉｐ控股公司 |
用於將自組裝單層沈積於基板之表面上的設備
|
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
|
WO2019023001A1
(en)
*
|
2017-07-23 |
2019-01-31 |
Applied Materials, Inc. |
METHODS FOR SELECTIVE DEPOSITION ON SILICON-BASED DIELECTRICS
|
|
US10312055B2
(en)
|
2017-07-26 |
2019-06-04 |
Asm Ip Holding B.V. |
Method of depositing film by PEALD using negative bias
|
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
|
US10605530B2
(en)
|
2017-07-26 |
2020-03-31 |
Asm Ip Holding B.V. |
Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
|
|
TWI815813B
(zh)
|
2017-08-04 |
2023-09-21 |
荷蘭商Ａｓｍ智慧財產控股公司 |
用於分配反應腔內氣體的噴頭總成
|
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
|
US10249524B2
(en)
|
2017-08-09 |
2019-04-02 |
Asm Ip Holding B.V. |
Cassette holder assembly for a substrate cassette and holding member for use in such assembly
|
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
|
KR102391351B1
(ko)
*
|
2017-08-13 |
2022-04-28 |
어플라이드 머티어리얼스, 인코포레이티드 |
차단 분자들의 가교결합에 의해 선택적 증착을 향상시키는 방법
|
|
US10276411B2
(en)
|
2017-08-18 |
2019-04-30 |
Applied Materials, Inc. |
High pressure and high temperature anneal chamber
|
|
KR102405723B1
(ko)
|
2017-08-18 |
2022-06-07 |
어플라이드 머티어리얼스, 인코포레이티드 |
고압 및 고온 어닐링 챔버
|
|
US10236177B1
(en)
|
2017-08-22 |
2019-03-19 |
ASM IP Holding B.V.. |
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
|
|
USD900036S1
(en)
|
2017-08-24 |
2020-10-27 |
Asm Ip Holding B.V. |
Heater electrical connector and adapter
|
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
|
KR102401446B1
(ko)
|
2017-08-31 |
2022-05-24 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
TWI772516B
(zh)
*
|
2017-09-12 |
2022-08-01 |
美商應用材料股份有限公司 |
藉由化學蝕刻去除選擇性沉積缺陷
|
|
CN111095524B
(zh)
|
2017-09-12 |
2023-10-03 |
应用材料公司 |
用于使用保护阻挡物层制造半导体结构的设备和方法
|
|
US10607895B2
(en)
|
2017-09-18 |
2020-03-31 |
Asm Ip Holdings B.V. |
Method for forming a semiconductor device structure comprising a gate fill metal
|
|
KR102630301B1
(ko)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
|
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
|
US10763104B2
(en)
|
2017-09-28 |
2020-09-01 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of forming differential etch stop layer using directional plasma to activate surface on device structure
|
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
|
US10643867B2
(en)
|
2017-11-03 |
2020-05-05 |
Applied Materials, Inc. |
Annealing system and method
|
|
CN111357090B
(zh)
|
2017-11-11 |
2024-01-05 |
微材料有限责任公司 |
用于高压处理腔室的气体输送系统
|
|
KR102443047B1
(ko)
|
2017-11-16 |
2022-09-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 방법 및 그에 의해 제조된 장치
|
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
|
KR102622303B1
(ko)
|
2017-11-16 |
2024-01-05 |
어플라이드 머티어리얼스, 인코포레이티드 |
고압 스팀 어닐링 프로세싱 장치
|
|
KR20200075892A
(ko)
|
2017-11-17 |
2020-06-26 |
어플라이드 머티어리얼스, 인코포레이티드 |
고압 처리 시스템을 위한 컨덴서 시스템
|
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
|
JP7214724B2
(ja)
|
2017-11-27 |
2023-01-30 |
エーエスエム アイピー ホールディング ビー．ブイ． |
バッチ炉で利用されるウェハカセットを収納するための収納装置
|
|
KR102633318B1
(ko)
|
2017-11-27 |
2024-02-05 |
에이에스엠 아이피 홀딩 비.브이. |
청정 소형 구역을 포함한 장치
|
|
US10584039B2
(en)
|
2017-11-30 |
2020-03-10 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Titanium-containing film forming compositions for vapor deposition of titanium-containing films
|
|
US10689405B2
(en)
|
2017-11-30 |
2020-06-23 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Titanium-containing film forming compositions for vapor deposition of titanium-containing films
|
|
US10290508B1
(en)
|
2017-12-05 |
2019-05-14 |
Asm Ip Holding B.V. |
Method for forming vertical spacers for spacer-defined patterning
|
|
CN120497124A
(zh)
|
2017-12-07 |
2025-08-15 |
朗姆研究公司 |
在室调节中的抗氧化保护层
|
|
US10760158B2
(en)
|
2017-12-15 |
2020-09-01 |
Lam Research Corporation |
Ex situ coating of chamber components for semiconductor processing
|
|
JP7194525B2
(ja)
*
|
2017-12-28 |
2022-12-22 |
東京応化工業株式会社 |
表面処理方法、表面処理剤、及び基板上に領域選択的に製膜する方法
|
|
US10941301B2
(en)
*
|
2017-12-28 |
2021-03-09 |
Tokyo Ohka Kogyo Co., Ltd. |
Surface treatment method, surface treatment agent, and method for forming film region-selectively on substrate
|
|
US11033930B2
(en)
*
|
2018-01-08 |
2021-06-15 |
Applied Materials, Inc. |
Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition
|
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
|
WO2019142055A2
(en)
|
2018-01-19 |
2019-07-25 |
Asm Ip Holding B.V. |
Method for depositing a gap-fill layer by plasma-assisted deposition
|
|
TWI799494B
(zh)
|
2018-01-19 |
2023-04-21 |
荷蘭商Ａｓｍ 智慧財產控股公司 |
沈積方法
|
|
CN111699549B
(zh)
|
2018-01-24 |
2025-03-28 |
应用材料公司 |
使用高压退火的接缝弥合
|
|
USD903477S1
(en)
|
2018-01-24 |
2020-12-01 |
Asm Ip Holdings B.V. |
Metal clamp
|
|
US11018047B2
(en)
|
2018-01-25 |
2021-05-25 |
Asm Ip Holding B.V. |
Hybrid lift pin
|
|
USD880437S1
(en)
|
2018-02-01 |
2020-04-07 |
Asm Ip Holding B.V. |
Gas supply plate for semiconductor manufacturing apparatus
|
|
US10535516B2
(en)
|
2018-02-01 |
2020-01-14 |
Asm Ip Holdings B.V. |
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
|
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
|
CN116732497B
(zh)
|
2018-02-14 |
2025-06-17 |
Asmip私人控股有限公司 |
通过循环沉积工艺在衬底上沉积含钌膜的方法
|
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
|
US10731249B2
(en)
|
2018-02-15 |
2020-08-04 |
Asm Ip Holding B.V. |
Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
|
|
US10658181B2
(en)
|
2018-02-20 |
2020-05-19 |
Asm Ip Holding B.V. |
Method of spacer-defined direct patterning in semiconductor fabrication
|
|
KR102636427B1
(ko)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 장치
|
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
|
US11629406B2
(en)
|
2018-03-09 |
2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
|
KR102702244B1
(ko)
|
2018-03-09 |
2024-09-03 |
어플라이드 머티어리얼스, 인코포레이티드 |
금속 함유 재료들을 위한 고압 어닐링 프로세스
|
|
US11114283B2
(en)
|
2018-03-16 |
2021-09-07 |
Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
|
KR102646467B1
(ko)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
|
|
US10510536B2
(en)
|
2018-03-29 |
2019-12-17 |
Asm Ip Holding B.V. |
Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
|
|
US11230766B2
(en)
|
2018-03-29 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
US11088002B2
(en)
|
2018-03-29 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate rack and a substrate processing system and method
|
|
US10569299B2
(en)
*
|
2018-03-30 |
2020-02-25 |
Varian Semiconductor Equipment Associates, Inc. |
Hydrophobic shafts for use in process chambers
|
|
KR102501472B1
(ko)
|
2018-03-30 |
2023-02-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
US10714331B2
(en)
|
2018-04-04 |
2020-07-14 |
Applied Materials, Inc. |
Method to fabricate thermally stable low K-FinFET spacer
|
|
KR102600229B1
(ko)
|
2018-04-09 |
2023-11-10 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
|
|
CN112368119A
(zh)
|
2018-04-09 |
2021-02-12 |
Ald纳米解决方案股份有限公司 |
疏水涂层和使用原子或分子沉积制备疏水和疏油涂层的方法
|
|
WO2019204121A1
(en)
*
|
2018-04-19 |
2019-10-24 |
Applied Materials, Inc. |
Methods of treating a substrate to form a layer thereon for application in selective deposition processes
|
|
JP7146690B2
(ja)
|
2018-05-02 |
2022-10-04 |
エーエスエム アイピー ホールディング ビー．ブイ． |
堆積および除去を使用した選択的層形成
|
|
US12025484B2
(en)
|
2018-05-08 |
2024-07-02 |
Asm Ip Holding B.V. |
Thin film forming method
|
|
US10950429B2
(en)
|
2018-05-08 |
2021-03-16 |
Applied Materials, Inc. |
Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
|
|
TWI843623B
(zh)
|
2018-05-08 |
2024-05-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
|
|
US12272527B2
(en)
|
2018-05-09 |
2025-04-08 |
Asm Ip Holding B.V. |
Apparatus for use with hydrogen radicals and method of using same
|
|
KR20190129718A
(ko)
|
2018-05-11 |
2019-11-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
|
|
US10566188B2
(en)
|
2018-05-17 |
2020-02-18 |
Applied Materials, Inc. |
Method to improve film stability
|
|
KR102596988B1
(ko)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 그에 의해 제조된 장치
|
|
US10704141B2
(en)
*
|
2018-06-01 |
2020-07-07 |
Applied Materials, Inc. |
In-situ CVD and ALD coating of chamber to control metal contamination
|
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
|
TWI840362B
(zh)
|
2018-06-04 |
2024-05-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
水氣降低的晶圓處置腔室
|
|
US11286562B2
(en)
|
2018-06-08 |
2022-03-29 |
Asm Ip Holding B.V. |
Gas-phase chemical reactor and method of using same
|
|
JP2019220494A
(ja)
*
|
2018-06-15 |
2019-12-26 |
株式会社Adeka |
膜形成用組成物、膜付基板、その製造方法及び薄膜の製造方法
|
|
KR102568797B1
(ko)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 시스템
|
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
|
CN112292477A
(zh)
|
2018-06-27 |
2021-01-29 |
Asm Ip私人控股有限公司 |
用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
|
|
TWI871083B
(zh)
|
2018-06-27 |
2025-01-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於形成含金屬材料之循環沉積製程
|
|
US10612136B2
(en)
|
2018-06-29 |
2020-04-07 |
ASM IP Holding, B.V. |
Temperature-controlled flange and reactor system including same
|
|
KR102686758B1
(ko)
|
2018-06-29 |
2024-07-18 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
|
JP7101551B2
(ja)
|
2018-07-02 |
2022-07-15 |
東京エレクトロン株式会社 |
選択的に対象膜を形成する方法およびシステム
|
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
|
US10767789B2
(en)
|
2018-07-16 |
2020-09-08 |
Asm Ip Holding B.V. |
Diaphragm valves, valve components, and methods for forming valve components
|
|
US10748783B2
(en)
|
2018-07-25 |
2020-08-18 |
Applied Materials, Inc. |
Gas delivery module
|
|
US10483099B1
(en)
|
2018-07-26 |
2019-11-19 |
Asm Ip Holding B.V. |
Method for forming thermally stable organosilicon polymer film
|
|
US11053591B2
(en)
|
2018-08-06 |
2021-07-06 |
Asm Ip Holding B.V. |
Multi-port gas injection system and reactor system including same
|
|
US10675581B2
(en)
|
2018-08-06 |
2020-06-09 |
Applied Materials, Inc. |
Gas abatement apparatus
|
|
US10883175B2
(en)
|
2018-08-09 |
2021-01-05 |
Asm Ip Holding B.V. |
Vertical furnace for processing substrates and a liner for use therein
|
|
CN112567498A
(zh)
*
|
2018-08-10 |
2021-03-26 |
应用材料公司 |
使用自组装单层的选择性沉积的方法
|
|
US10829852B2
(en)
|
2018-08-16 |
2020-11-10 |
Asm Ip Holding B.V. |
Gas distribution device for a wafer processing apparatus
|
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
|
KR102798427B1
(ko)
*
|
2018-09-04 |
2025-04-23 |
도쿄엘렉트론가부시키가이샤 |
자기 조립 단분자층 코팅을 사용함으로써 금속 오염을 방지하기 위한 방법 및 시스템
|
|
US11024523B2
(en)
|
2018-09-11 |
2021-06-01 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
KR102707956B1
(ko)
|
2018-09-11 |
2024-09-19 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
|
US11049751B2
(en)
|
2018-09-14 |
2021-06-29 |
Asm Ip Holding B.V. |
Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
|
|
CN110970344B
(zh)
|
2018-10-01 |
2024-10-25 |
Asmip控股有限公司 |
衬底保持设备、包含所述设备的系统及其使用方法
|
|
US12482648B2
(en)
|
2018-10-02 |
2025-11-25 |
Asm Ip Holding B.V. |
Selective passivation and selective deposition
|
|
JP2020056104A
(ja)
|
2018-10-02 |
2020-04-09 |
エーエスエム アイピー ホールディング ビー．ブイ． |
選択的パッシベーションおよび選択的堆積
|
|
US11232963B2
(en)
|
2018-10-03 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
|
KR102592699B1
(ko)
|
2018-10-08 |
2023-10-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
|
|
US10847365B2
(en)
|
2018-10-11 |
2020-11-24 |
Asm Ip Holding B.V. |
Method of forming conformal silicon carbide film by cyclic CVD
|
|
US10811256B2
(en)
|
2018-10-16 |
2020-10-20 |
Asm Ip Holding B.V. |
Method for etching a carbon-containing feature
|
|
KR102546322B1
(ko)
|
2018-10-19 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
|
US12371781B2
(en)
|
2018-10-19 |
2025-07-29 |
Lam Research Corporation |
In situ protective coating of chamber components for semiconductor processing
|
|
KR102605121B1
(ko)
|
2018-10-19 |
2023-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
|
USD948463S1
(en)
|
2018-10-24 |
2022-04-12 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate supporting apparatus
|
|
US10381219B1
(en)
|
2018-10-25 |
2019-08-13 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film
|
|
US12378665B2
(en)
|
2018-10-26 |
2025-08-05 |
Asm Ip Holding B.V. |
High temperature coatings for a preclean and etch apparatus and related methods
|
|
WO2020092002A1
(en)
|
2018-10-30 |
2020-05-07 |
Applied Materials, Inc. |
Methods for etching a structure for semiconductor applications
|
|
US10943818B2
(en)
|
2018-10-31 |
2021-03-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device and method
|
|
US11087997B2
(en)
|
2018-10-31 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
|
KR102748291B1
(ko)
|
2018-11-02 |
2024-12-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 기판 처리 장치
|
|
US11572620B2
(en)
|
2018-11-06 |
2023-02-07 |
Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
|
US11031242B2
(en)
|
2018-11-07 |
2021-06-08 |
Asm Ip Holding B.V. |
Methods for depositing a boron doped silicon germanium film
|
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
|
CN112996950B
(zh)
|
2018-11-16 |
2024-04-05 |
应用材料公司 |
使用增强扩散工艺的膜沉积
|
|
TWI757659B
(zh)
*
|
2018-11-23 |
2022-03-11 |
美商應用材料股份有限公司 |
碳膜的選擇性沉積及其用途
|
|
US10559458B1
(en)
|
2018-11-26 |
2020-02-11 |
Asm Ip Holding B.V. |
Method of forming oxynitride film
|
|
US12040199B2
(en)
|
2018-11-28 |
2024-07-16 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
|
US11217444B2
(en)
|
2018-11-30 |
2022-01-04 |
Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
|
KR102636428B1
(ko)
|
2018-12-04 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치를 세정하는 방법
|
|
WO2020117462A1
(en)
|
2018-12-07 |
2020-06-11 |
Applied Materials, Inc. |
Semiconductor processing system
|
|
US11158513B2
(en)
|
2018-12-13 |
2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
|
JP7504584B2
(ja)
|
2018-12-14 |
2024-06-24 |
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|
|
CN109468615A
(zh)
*
|
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2019-03-15 |
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纳米涂层及其制备方法
|
|
CN111364027A
(zh)
*
|
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|
|
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|
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|
|
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(ko)
|
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|
|
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|
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|
|
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|
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|
|
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(zh)
|
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|
|
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(ko)
|
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|
|
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(zh)
|
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|
|
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|
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|
|
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|
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|
|
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(ko)
|
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|
|
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|
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|
|
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(ja)
*
|
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|
|
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(ja)
*
|
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|
|
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(ja)
*
|
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|
|
CN113316836B
(zh)
*
|
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|
|
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(ja)
|
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|
|
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(ko)
|
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|
|
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(en)
|
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|
|
US11447864B2
(en)
|
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|
|
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(ko)
|
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|
|
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|
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|
|
KR102869364B1
(ko)
|
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|
|
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(ko)
|
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|
|
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(ja)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(en)
|
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|
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
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(en)
|
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2022-03-01 |
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|
|
USD931978S1
(en)
|
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2021-09-28 |
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|
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
|
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(ja)
|
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|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
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(ko)
|
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|
|
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(ko)
|
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|
|
US11643724B2
(en)
|
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Method of forming structures using a neutral beam
|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
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(ko)
|
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2021-02-10 |
에이에스엠 아이피 홀딩 비.브이. |
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|
|
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(zh)
|
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|
|
US11587814B2
(en)
|
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2023-02-21 |
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|
|
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(en)
|
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2023-02-21 |
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|
|
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(en)
|
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|
|
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(zh)
|
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|
|
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(zh)
|
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|
|
JP7238687B2
(ja)
*
|
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|
|
USD965044S1
(en)
|
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|
|
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(en)
|
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|
|
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(ja)
|
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|
|
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(en)
|
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2022-01-11 |
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|
|
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(ko)
|
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2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
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|
|
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(en)
|
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2022-04-19 |
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|
|
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(en)
|
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2023-02-28 |
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Insulator
|
|
USD930782S1
(en)
|
2019-08-22 |
2021-09-14 |
Asm Ip Holding B.V. |
Gas distributor
|
|
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(ko)
|
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2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
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|
|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
희생 캡핑 층을 이용한 선택적 증착 방법
|
|
KR102733104B1
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
|
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(ja)
|
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2021-03-18 |
東京エレクトロン株式会社 |
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|
|
US12469693B2
(en)
|
2019-09-17 |
2025-11-11 |
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Method of forming a carbon-containing layer and structure including the layer
|
|
US11133178B2
(en)
|
2019-09-20 |
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Applied Materials, Inc. |
Seamless gapfill with dielectric ALD films
|
|
JP7262354B2
(ja)
*
|
2019-09-24 |
2023-04-21 |
東京エレクトロン株式会社 |
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|
|
JP2021052069A
(ja)
*
|
2019-09-24 |
2021-04-01 |
東京エレクトロン株式会社 |
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|
|
US11562901B2
(en)
|
2019-09-25 |
2023-01-24 |
Asm Ip Holding B.V. |
Substrate processing method
|
|
CN112593212B
(zh)
|
2019-10-02 |
2023-12-22 |
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|
|
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(zh)
|
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|
|
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(zh)
|
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理裝置
|
|
KR20210042810A
(ko)
|
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2021-04-20 |
에이에스엠 아이피 홀딩 비.브이. |
활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
|
|
KR102879443B1
(ko)
|
2019-10-10 |
2025-11-03 |
에이에스엠 아이피 홀딩 비.브이. |
포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
|
|
US12009241B2
(en)
|
2019-10-14 |
2024-06-11 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly with detector to detect cassette
|
|
TWI834919B
(zh)
|
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2024-03-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
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|
|
US11637014B2
(en)
|
2019-10-17 |
2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
|
KR102845724B1
(ko)
|
2019-10-21 |
2025-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
막을 선택적으로 에칭하기 위한 장치 및 방법
|
|
KR20210050453A
(ko)
|
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2021-05-07 |
에이에스엠 아이피 홀딩 비.브이. |
기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
|
|
US11646205B2
(en)
|
2019-10-29 |
2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
|
US11139163B2
(en)
|
2019-10-31 |
2021-10-05 |
Asm Ip Holding B.V. |
Selective deposition of SiOC thin films
|
|
KR102890638B1
(ko)
|
2019-11-05 |
2025-11-25 |
에이에스엠 아이피 홀딩 비.브이. |
도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
|
|
US11501968B2
(en)
|
2019-11-15 |
2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
|
KR102861314B1
(ko)
|
2019-11-20 |
2025-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
|
|
US11450529B2
(en)
|
2019-11-26 |
2022-09-20 |
Asm Ip Holding B.V. |
Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
|
|
CN112951697B
(zh)
|
2019-11-26 |
2025-07-29 |
Asmip私人控股有限公司 |
基板处理设备
|
|
CN120998766A
(zh)
|
2019-11-29 |
2025-11-21 |
Asm Ip私人控股有限公司 |
基板处理设备
|
|
CN112885693B
(zh)
|
2019-11-29 |
2025-06-10 |
Asmip私人控股有限公司 |
基板处理设备
|
|
JP7527928B2
(ja)
|
2019-12-02 |
2024-08-05 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基板処理装置、基板処理方法
|
|
KR20210070898A
(ko)
|
2019-12-04 |
2021-06-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
|
US11885013B2
(en)
|
2019-12-17 |
2024-01-30 |
Asm Ip Holding B.V. |
Method of forming vanadium nitride layer and structure including the vanadium nitride layer
|
|
US11527403B2
(en)
|
2019-12-19 |
2022-12-13 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor structures
|
|
JP7365898B2
(ja)
*
|
2019-12-27 |
2023-10-20 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
JP7257949B2
(ja)
|
2019-12-27 |
2023-04-14 |
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成膜方法及び成膜装置
|
|
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(ko)
|
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2025-05-02 |
엔테그리스, 아이엔씨. |
마그네슘 플루오라이드 영역이 형성된 금속체
|
|
KR20210089077A
(ko)
|
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2021-07-15 |
에이에스엠 아이피 홀딩 비.브이. |
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|
|
KR20210089079A
(ko)
|
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2021-07-15 |
에이에스엠 아이피 홀딩 비.브이. |
채널형 리프트 핀
|
|
US11993847B2
(en)
|
2020-01-08 |
2024-05-28 |
Asm Ip Holding B.V. |
Injector
|
|
JP7118099B2
(ja)
*
|
2020-01-15 |
2022-08-15 |
株式会社Kokusai Electric |
半導体装置の製造方法、基板処理装置およびプログラム
|
|
KR102882467B1
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
고 종횡비 피처를 형성하는 방법
|
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법 및 박막 표면 개질 방법
|
|
TWI889744B
(zh)
|
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
污染物捕集系統、及擋板堆疊
|
|
TW202513845A
(zh)
|
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半導體裝置結構及其形成方法
|
|
TW202146882A
(zh)
|
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2021-12-16 |
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|
|
CN115003853B
(zh)
*
|
2020-02-04 |
2025-03-07 |
默克专利有限公司 |
选择性形成含金属膜的方法
|
|
US11776846B2
(en)
|
2020-02-07 |
2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
|
TW202146691A
(zh)
|
2020-02-13 |
2021-12-16 |
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氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法
|
|
KR20210103956A
(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
|
TWI855223B
(zh)
|
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2024-09-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於生長磷摻雜矽層之方法
|
|
US11901222B2
(en)
|
2020-02-17 |
2024-02-13 |
Applied Materials, Inc. |
Multi-step process for flowable gap-fill film
|
|
TWI895326B
(zh)
|
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2025-09-01 |
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專用於零件清潔的系統
|
|
TW202139347A
(zh)
|
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反應器系統、對準夾具、及對準方法
|
|
US11876356B2
(en)
|
2020-03-11 |
2024-01-16 |
Asm Ip Holding B.V. |
Lockout tagout assembly and system and method of using same
|
|
KR20210116240A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
조절성 접합부를 갖는 기판 핸들링 장치
|
|
CN113394086A
(zh)
|
2020-03-12 |
2021-09-14 |
Asm Ip私人控股有限公司 |
用于制造具有目标拓扑轮廓的层结构的方法
|
|
US12173404B2
(en)
|
2020-03-17 |
2024-12-24 |
Asm Ip Holding B.V. |
Method of depositing epitaxial material, structure formed using the method, and system for performing the method
|
|
TW202140832A
(zh)
|
2020-03-30 |
2021-11-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
氧化矽在金屬表面上之選擇性沉積
|
|
TWI865747B
(zh)
|
2020-03-30 |
2024-12-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
在兩不同表面上同時選擇性沉積兩不同材料
|
|
TWI862807B
(zh)
|
2020-03-30 |
2024-11-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
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|
|
KR102755229B1
(ko)
|
2020-04-02 |
2025-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법
|
|
TWI887376B
(zh)
|
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2025-06-21 |
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半導體裝置的製造方法
|
|
TWI888525B
(zh)
|
2020-04-08 |
2025-07-01 |
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用於選擇性蝕刻氧化矽膜之設備及方法
|
|
US11821078B2
(en)
|
2020-04-15 |
2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
|
KR20210128343A
(ko)
|
2020-04-15 |
2021-10-26 |
에이에스엠 아이피 홀딩 비.브이. |
크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
|
|
US11996289B2
(en)
|
2020-04-16 |
2024-05-28 |
Asm Ip Holding B.V. |
Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
|
|
TW202143328A
(zh)
|
2020-04-21 |
2021-11-16 |
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用於調整膜應力之方法
|
|
KR20210132612A
(ko)
|
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2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐 화합물들을 안정화하기 위한 방법들 및 장치
|
|
TW202208671A
(zh)
|
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|
|
KR20210132600A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
|
|
US11898243B2
(en)
|
2020-04-24 |
2024-02-13 |
Asm Ip Holding B.V. |
Method of forming vanadium nitride-containing layer
|
|
KR102866804B1
(ko)
|
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2025-09-30 |
에이에스엠 아이피 홀딩 비.브이. |
냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
|
|
KR102783898B1
(ko)
|
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2025-03-18 |
에이에스엠 아이피 홀딩 비.브이. |
고체 소스 전구체 용기
|
|
KR20210134869A
(ko)
|
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2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Foup 핸들러를 이용한 foup의 빠른 교환
|
|
JP7726664B2
(ja)
|
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2025-08-20 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
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|
|
JP7736446B2
(ja)
|
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2025-09-09 |
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同調回路を備える反応器システム
|
|
KR102788543B1
(ko)
|
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2025-03-27 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 레이저 정렬 고정구
|
|
TW202146699A
(zh)
|
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2021-12-16 |
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|
|
TW202147383A
(zh)
|
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2021-12-16 |
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基材處理設備
|
|
KR102795476B1
(ko)
|
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2025-04-11 |
에이에스엠 아이피 홀딩 비.브이. |
다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
|
|
KR20210145079A
(ko)
|
2020-05-21 |
2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
기판을 처리하기 위한 플랜지 및 장치
|
|
TWI873343B
(zh)
|
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2025-02-21 |
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|
|
KR20210146802A
(ko)
|
2020-05-26 |
2021-12-06 |
에이에스엠 아이피 홀딩 비.브이. |
붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
|
|
TWI876048B
(zh)
|
2020-05-29 |
2025-03-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
TW202212620A
(zh)
|
2020-06-02 |
2022-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
|
|
TW202208659A
(zh)
|
2020-06-16 |
2022-03-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沉積含硼之矽鍺層的方法
|
|
TW202218133A
(zh)
|
2020-06-24 |
2022-05-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成含矽層之方法
|
|
TWI873359B
(zh)
|
2020-06-30 |
2025-02-21 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
TWI896694B
(zh)
|
2020-07-01 |
2025-09-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沉積方法、半導體結構、及沉積系統
|
|
TW202202649A
(zh)
|
2020-07-08 |
2022-01-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
TWI864307B
(zh)
|
2020-07-17 |
2024-12-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於光微影之結構、方法與系統
|
|
TWI878570B
(zh)
|
2020-07-20 |
2025-04-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於沉積鉬層之方法及系統
|
|
KR20220011092A
(ko)
|
2020-07-20 |
2022-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
|
|
US12322591B2
(en)
|
2020-07-27 |
2025-06-03 |
Asm Ip Holding B.V. |
Thin film deposition process
|
|
KR20220021863A
(ko)
|
2020-08-14 |
2022-02-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
|
US12040177B2
(en)
|
2020-08-18 |
2024-07-16 |
Asm Ip Holding B.V. |
Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
|
|
TW202228863A
(zh)
|
2020-08-25 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
清潔基板的方法、選擇性沉積的方法、及反應器系統
|
|
TW202534193A
(zh)
|
2020-08-26 |
2025-09-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成金屬氧化矽層及金屬氮氧化矽層的方法
|
|
TW202229601A
(zh)
|
2020-08-27 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
|
|
KR102406174B1
(ko)
*
|
2020-09-08 |
2022-06-08 |
주식회사 이지티엠 |
선택성 부여제를 이용한 영역 선택적 박막 형성 방법
|
|
KR20220033997A
(ko)
|
2020-09-10 |
2022-03-17 |
에이에스엠 아이피 홀딩 비.브이. |
갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
|
|
USD990534S1
(en)
|
2020-09-11 |
2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
|
KR20220036866A
(ko)
|
2020-09-16 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 산화물 증착 방법
|
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
|
TWI889903B
(zh)
|
2020-09-25 |
2025-07-11 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
基板處理方法
|
|
US12009224B2
(en)
|
2020-09-29 |
2024-06-11 |
Asm Ip Holding B.V. |
Apparatus and method for etching metal nitrides
|
|
KR20220045900A
(ko)
|
2020-10-06 |
2022-04-13 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
|
|
CN114293174A
(zh)
|
2020-10-07 |
2022-04-08 |
Asm Ip私人控股有限公司 |
气体供应单元和包括气体供应单元的衬底处理设备
|
|
TW202229613A
(zh)
|
2020-10-14 |
2022-08-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
於階梯式結構上沉積材料的方法
|
|
KR102873665B1
(ko)
|
2020-10-15 |
2025-10-17 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
|
|
TW202217037A
(zh)
|
2020-10-22 |
2022-05-01 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
沉積釩金屬的方法、結構、裝置及沉積總成
|
|
TW202223136A
(zh)
|
2020-10-28 |
2022-06-16 |
荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 |
用於在基板上形成層之方法、及半導體處理系統
|
|
TW202229620A
(zh)
|
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