JP2012119678A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2012119678A5 JP2012119678A5 JP2011253263A JP2011253263A JP2012119678A5 JP 2012119678 A5 JP2012119678 A5 JP 2012119678A5 JP 2011253263 A JP2011253263 A JP 2011253263A JP 2011253263 A JP2011253263 A JP 2011253263A JP 2012119678 A5 JP2012119678 A5 JP 2012119678A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- dielectric
- low
- poly
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- -1 polysiloxane Polymers 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000003431 cross linking reagent Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/957,461 US8821962B2 (en) | 2010-12-01 | 2010-12-01 | Method of forming dielectric layer with a dielectric composition |
| US12/957,461 | 2010-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012119678A JP2012119678A (ja) | 2012-06-21 |
| JP2012119678A5 true JP2012119678A5 (enExample) | 2014-12-25 |
Family
ID=46152595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011253263A Pending JP2012119678A (ja) | 2010-12-01 | 2011-11-18 | 誘電性組成物 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8821962B2 (enExample) |
| JP (1) | JP2012119678A (enExample) |
| CN (1) | CN102487125B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6647780B2 (ja) * | 2014-10-27 | 2020-02-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 有機金属材料および方法 |
| GB2534600A (en) * | 2015-01-29 | 2016-08-03 | Cambridge Display Tech Ltd | Organic thin film transistors |
| WO2018060015A1 (en) | 2016-09-27 | 2018-04-05 | Basf Se | Star-shaped styrene polymers with enhanced glass transition temperature |
| CN107915910A (zh) * | 2017-11-15 | 2018-04-17 | 苏州科茂电子材料科技有限公司 | 添加聚异丁烯的介电材料制备方法 |
| US20200031040A1 (en) * | 2018-07-24 | 2020-01-30 | Xerox Corporation | Printing process and system |
| CN113410384B (zh) * | 2021-06-28 | 2023-04-07 | 西南大学 | 一种用于柔性场效应晶体管的聚合物介电层的制备方法 |
| CN114806035B (zh) * | 2022-05-09 | 2024-04-19 | 深圳市嘉凯勒实业有限公司 | 一种poss-酞菁铜介电单体改性聚苯乙烯材料的制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8418591D0 (en) * | 1984-07-20 | 1984-08-22 | Bp Chem Int Ltd | Polymer composition |
| JPH0618986B2 (ja) * | 1987-10-19 | 1994-03-16 | 信越化学工業株式会社 | 硬化性エポキシ樹脂組成物 |
| CA2049019A1 (en) * | 1989-03-01 | 1990-09-02 | Robert S. Dubrow | Method of curing organopolysiloxane compositions and compositions and articles therefrom |
| EP0695116B1 (en) * | 1994-07-29 | 2004-01-28 | World Properties, Inc. | Fluoropolymer composites containing two or more ceramic fillers to achieve independent control of dielectric constant and dimensional stability |
| DE19535603A1 (de) * | 1995-09-25 | 1997-03-27 | Basf Lacke & Farben | 3-Komponenten-Beschichtungsmittel mit hoher Lösemittelbeständigkeit und hoher Abklebfestigkeit |
| US6440642B1 (en) * | 1999-09-15 | 2002-08-27 | Shipley Company, L.L.C. | Dielectric composition |
| DE102004005247A1 (de) * | 2004-01-28 | 2005-09-01 | Infineon Technologies Ag | Imprint-Lithographieverfahren |
| WO2006009942A1 (en) * | 2004-06-21 | 2006-01-26 | Exxonmobil Chemical Patents Inc. | Polymerization process |
| US7754510B2 (en) * | 2007-04-02 | 2010-07-13 | Xerox Corporation | Phase-separated dielectric structure fabrication process |
| CN101525511B (zh) * | 2008-03-07 | 2011-06-22 | 财团法人工业技术研究院 | 可硬化交联型的墨水组合物及介电薄膜 |
| US8154080B2 (en) * | 2008-12-05 | 2012-04-10 | Xerox Corporation | Dielectric structure having lower-k and higher-k materials |
| JP2010245379A (ja) * | 2009-04-08 | 2010-10-28 | Hitachi Chem Co Ltd | 絶縁体インク、絶縁被覆層の作製方法及び半導体装置 |
-
2010
- 2010-12-01 US US12/957,461 patent/US8821962B2/en active Active
-
2011
- 2011-11-18 JP JP2011253263A patent/JP2012119678A/ja active Pending
- 2011-12-01 CN CN201110392847.5A patent/CN102487125B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012119678A5 (enExample) | ||
| JP2013153160A5 (ja) | 半導体装置の作製方法 | |
| JP2010517747A5 (enExample) | ||
| JP2013120835A5 (enExample) | ||
| JP2012256737A5 (enExample) | ||
| TWI366068B (en) | Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process | |
| JP2010507261A5 (enExample) | ||
| WO2008078516A1 (ja) | 酸化シリコン薄膜の製造装置及び形成方法 | |
| JP2013042180A5 (enExample) | ||
| JP2011205089A5 (ja) | 半導体膜の作製方法 | |
| TW200746441A (en) | Manufacturing method of thin film transistor and thin film transistor, and display | |
| WO2008099767A3 (en) | Curable liquid composition, method of coating, inorganic substrate, and semiconductor device | |
| JP2015509260A5 (enExample) | ||
| JP2008258609A5 (enExample) | ||
| JP2010021534A5 (enExample) | ||
| WO2014039847A3 (en) | Field-effect transistors based on macroscopically oriented polymers | |
| JP2011073284A5 (enExample) | ||
| JP2012015496A5 (enExample) | ||
| JP2011029609A5 (ja) | 半導体装置の作製方法 | |
| TWI369582B (en) | Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition | |
| JP2012119679A5 (enExample) | ||
| TWI648751B (zh) | 在彈性基材上之透明導電塗層 | |
| JP2012519373A5 (enExample) | ||
| JP2013089832A5 (ja) | 光電変換装置の作製方法 | |
| JP2013514634A5 (enExample) |