JP2012519373A5 - - Google Patents
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- Publication number
- JP2012519373A5 JP2012519373A5 JP2011551431A JP2011551431A JP2012519373A5 JP 2012519373 A5 JP2012519373 A5 JP 2012519373A5 JP 2011551431 A JP2011551431 A JP 2011551431A JP 2011551431 A JP2011551431 A JP 2011551431A JP 2012519373 A5 JP2012519373 A5 JP 2012519373A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- thermochemical
- forming
- conductive cap
- exposed surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 17
- 239000003989 dielectric material Substances 0.000 claims 10
- 238000004140 cleaning Methods 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 238000001465 metallisation Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
- 238000011946 reduction process Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009010844.0 | 2009-02-27 | ||
| DE102009010844.0A DE102009010844B4 (de) | 2009-02-27 | 2009-02-27 | Bereitstellen eines verbesserten Elektromigrationsverhaltens und Verringern der Beeinträchtigung empfindlicher dielektrischer Materialien mit kleinem ε in Metallisierungssystemen von Halbleiterbauelementen |
| PCT/EP2010/001091 WO2010097190A1 (en) | 2009-02-27 | 2010-02-22 | Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012519373A JP2012519373A (ja) | 2012-08-23 |
| JP2012519373A5 true JP2012519373A5 (enExample) | 2013-04-11 |
Family
ID=42173426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011551431A Pending JP2012519373A (ja) | 2009-02-27 | 2010-02-22 | 半導体デバイスのメタライゼーションシステムにおいて優れたエレクトロマイグレーション性能を提供すること及び敏感な低ｋ誘電体の劣化を低減すること |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8153524B2 (enExample) |
| JP (1) | JP2012519373A (enExample) |
| KR (1) | KR20120052190A (enExample) |
| CN (1) | CN102388449A (enExample) |
| DE (1) | DE102009010844B4 (enExample) |
| WO (1) | WO2010097190A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008063417B4 (de) * | 2008-12-31 | 2016-08-11 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Lokale Silizidierung an Kontaktlochunterseiten in Metallisierungssystemen von Halbleiterbauelementen |
| US8710660B2 (en) | 2012-07-20 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid interconnect scheme including aluminum metal line in low-k dielectric |
| US9373579B2 (en) * | 2012-12-14 | 2016-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protecting layer in a semiconductor structure |
| CN103871959B (zh) * | 2012-12-17 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
| US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
| US10020260B1 (en) * | 2016-12-22 | 2018-07-10 | Globalfoundries Inc. | Corrosion and/or etch protection layer for contacts and interconnect metallization integration |
| US10515896B2 (en) * | 2017-08-31 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure for semiconductor device and methods of fabrication thereof |
| CN114664656A (zh) | 2020-05-22 | 2022-06-24 | 北京屹唐半导体科技股份有限公司 | 使用臭氧气体和氢自由基的工件加工 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259160B1 (en) * | 1999-04-21 | 2001-07-10 | Advanced Micro Devices, Inc. | Apparatus and method of encapsulated copper (Cu) Interconnect formation |
| JP4034227B2 (ja) * | 2002-05-08 | 2008-01-16 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6869878B1 (en) * | 2003-02-14 | 2005-03-22 | Advanced Micro Devices, Inc. | Method of forming a selective barrier layer using a sacrificial layer |
| US7268074B2 (en) * | 2004-06-14 | 2007-09-11 | Enthone, Inc. | Capping of metal interconnects in integrated circuit electronic devices |
| JP4903374B2 (ja) * | 2004-09-02 | 2012-03-28 | ローム株式会社 | 半導体装置の製造方法 |
| US7309658B2 (en) * | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
| DE102005035740A1 (de) * | 2005-07-29 | 2007-02-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer isolierenden Barrierenschicht für eine Kupfermetallisierungsschicht |
| JP2007053133A (ja) * | 2005-08-15 | 2007-03-01 | Toshiba Corp | 半導体装置及びその製造方法 |
| DE102005057057B4 (de) * | 2005-11-30 | 2017-01-05 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung einer isolierenden Deckschicht für eine Kupfermetallisierungsschicht unter Anwendung einer Silanreaktion |
| US7972954B2 (en) * | 2006-01-24 | 2011-07-05 | Infineon Technologies Ag | Porous silicon dielectric |
| US20070228571A1 (en) * | 2006-04-04 | 2007-10-04 | Chen-Hua Yu | Interconnect structure having a silicide/germanide cap layer |
| US20070287294A1 (en) | 2006-06-08 | 2007-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structures and methods for fabricating the same |
| JP5204964B2 (ja) * | 2006-10-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2008172051A (ja) * | 2007-01-12 | 2008-07-24 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| DE102007022621B4 (de) | 2007-05-15 | 2017-06-01 | Advanced Micro Devices Inc. | Verfahren zur Herstellung einer dielektrischen Deckschicht für eine Kupfermetallisierung unter Anwendung einer thermisch-chemischen Behandlung auf Wasserstoffbasis |
| JP2009016520A (ja) * | 2007-07-04 | 2009-01-22 | Tokyo Electron Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| US7928003B2 (en) * | 2008-10-10 | 2011-04-19 | Applied Materials, Inc. | Air gap interconnects using carbon-based films |
-
2009
- 2009-02-27 DE DE102009010844.0A patent/DE102009010844B4/de active Active
-
2010
- 2010-02-22 WO PCT/EP2010/001091 patent/WO2010097190A1/en not_active Ceased
- 2010-02-22 JP JP2011551431A patent/JP2012519373A/ja active Pending
- 2010-02-22 KR KR1020117022595A patent/KR20120052190A/ko not_active Withdrawn
- 2010-02-22 CN CN2010800121646A patent/CN102388449A/zh active Pending
- 2010-02-24 US US12/711,373 patent/US8153524B2/en active Active
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