JP2012216806A5 - - Google Patents

Download PDF

Info

Publication number
JP2012216806A5
JP2012216806A5 JP2012070515A JP2012070515A JP2012216806A5 JP 2012216806 A5 JP2012216806 A5 JP 2012216806A5 JP 2012070515 A JP2012070515 A JP 2012070515A JP 2012070515 A JP2012070515 A JP 2012070515A JP 2012216806 A5 JP2012216806 A5 JP 2012216806A5
Authority
JP
Japan
Prior art keywords
film
forming
oxide film
aluminum oxide
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012070515A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012216806A (ja
JP5926996B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012070515A priority Critical patent/JP5926996B2/ja
Priority claimed from JP2012070515A external-priority patent/JP5926996B2/ja
Publication of JP2012216806A publication Critical patent/JP2012216806A/ja
Publication of JP2012216806A5 publication Critical patent/JP2012216806A5/ja
Application granted granted Critical
Publication of JP5926996B2 publication Critical patent/JP5926996B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012070515A 2011-04-01 2012-03-27 半導体装置の作製方法 Active JP5926996B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012070515A JP5926996B2 (ja) 2011-04-01 2012-03-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011081859 2011-04-01
JP2011081859 2011-04-01
JP2012070515A JP5926996B2 (ja) 2011-04-01 2012-03-27 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016086671A Division JP6106786B2 (ja) 2011-04-01 2016-04-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2012216806A JP2012216806A (ja) 2012-11-08
JP2012216806A5 true JP2012216806A5 (enExample) 2015-04-16
JP5926996B2 JP5926996B2 (ja) 2016-05-25

Family

ID=46927766

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012070515A Active JP5926996B2 (ja) 2011-04-01 2012-03-27 半導体装置の作製方法
JP2016086671A Active JP6106786B2 (ja) 2011-04-01 2016-04-25 半導体装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016086671A Active JP6106786B2 (ja) 2011-04-01 2016-04-25 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8541266B2 (enExample)
JP (2) JP5926996B2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130130913A (ko) * 2012-05-23 2013-12-03 성균관대학교산학협력단 터치 패널 및 이의 제조 방법
KR101961426B1 (ko) * 2012-05-30 2019-03-25 삼성디스플레이 주식회사 박막 트랜지스터 및 그 형성 방법
KR102100290B1 (ko) * 2012-08-14 2020-05-27 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법과 상기 박막 트랜지스터를 포함하는 표시 장치
CN102881654B (zh) * 2012-09-29 2016-03-23 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制备方法、有源矩阵驱动显示装置
TWI664731B (zh) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102050243B1 (ko) * 2013-12-02 2019-11-29 한국전자통신연구원 자발광형 소자 및 반사형 소자를 포함하는 이중모드 화소 및 이를 이용한 이중모드 디스플레이
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
JP6273606B2 (ja) * 2014-01-31 2018-02-07 国立研究開発法人物質・材料研究機構 固定電荷を内部に誘起したゲート絶縁膜
WO2016067585A1 (ja) * 2014-10-29 2016-05-06 株式会社Ｊｏｌｅｄ 薄膜半導体装置、有機ｅｌ表示装置及び薄膜半導体装置の製造方法
KR102456654B1 (ko) 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102524983B1 (ko) 2014-11-28 2023-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
WO2016125051A1 (en) * 2015-02-04 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9496415B1 (en) 2015-12-02 2016-11-15 International Business Machines Corporation Structure and process for overturned thin film device with self-aligned gate and S/D contacts
JP6692645B2 (ja) * 2016-01-15 2020-05-13 株式会社ジャパンディスプレイ 半導体装置
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
KR102391754B1 (ko) 2016-05-20 2022-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 또는 이를 포함하는 표시 장치
JP7109902B2 (ja) * 2017-10-26 2022-08-01 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN108299704B (zh) * 2018-01-29 2020-05-12 谭丁宁 一种节能片及其制造方法
CN110416063B (zh) * 2019-06-27 2021-08-06 惠科股份有限公司 一种薄膜晶体管的制作方法及显示面板
CN110444601A (zh) * 2019-07-29 2019-11-12 天津大学 非晶铟镓氧化锌薄膜晶体管及其制造方法
CN110641052B (zh) * 2019-10-30 2021-05-14 仁新实业发展（信阳）有限公司 一种人造石英石板修复装置
JP7516210B2 (ja) * 2020-10-29 2024-07-16 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024040960A (ja) * 2022-09-13 2024-03-26 株式会社ジャパンディスプレイ 半導体装置

Family Cites Families (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6013930A (en) * 1997-09-24 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having laminated source and drain regions and method for producing the same
TW444275B (en) * 1998-01-13 2001-07-01 Toshiba Corp Processing device, laser annealing device, laser annealing method, manufacturing device and substrate manufacturing device for panel display
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP4447256B2 (ja) 2003-06-27 2010-04-07 株式会社半導体エネルギー研究所 発光装置の作製方法
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7642573B2 (en) 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
WO2008126729A1 (ja) * 2007-04-06 2008-10-23 Sharp Kabushiki Kaisha 半導体素子およびその製造方法、並びに該半導体素子を備える電子デバイス
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US8093136B2 (en) 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI450399B (zh) * 2008-07-31 2014-08-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI476921B (zh) 2008-07-31 2015-03-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI424506B (zh) * 2008-08-08 2014-01-21 Semiconductor Energy Lab 半導體裝置的製造方法
US8129718B2 (en) 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101623224B1 (ko) * 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101767864B1 (ko) * 2008-09-12 2017-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR102426826B1 (ko) * 2008-09-19 2022-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20110051247A (ko) * 2008-10-08 2011-05-17 가부시키가이샤 아루박 진공 처리 장치
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5484853B2 (ja) 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010053060A1 (en) 2008-11-07 2010-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010074927A2 (en) * 2008-12-24 2010-07-01 3M Innovative Properties Company Stability enhancements in metal oxide semiconductor thin film transistors
JP2010182819A (ja) * 2009-02-04 2010-08-19 Sony Corp 薄膜トランジスタおよび表示装置
JP2010205987A (ja) * 2009-03-04 2010-09-16 Sony Corp 薄膜トランジスタおよびその製造方法並びに表示装置
KR20250150667A (ko) 2010-02-26 2025-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101995851B1 (ko) 2010-07-02 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JP2012216806A5 (enExample)
JP2011199272A5 (enExample)
JP2011009724A5 (ja) 半導体装置の作製方法
JP2010239131A5 (enExample)
JP2013070070A5 (ja) 半導体装置及びその作製方法
JP2011192958A5 (enExample)
JP2012160714A5 (ja) 半導体装置の作製方法
JP2014007388A5 (ja) 半導体装置の作製方法
JP2011077514A5 (enExample)
JP2012009836A5 (enExample)
JP2010080947A5 (ja) 半導体装置の作製方法
JP2013016862A5 (enExample)
JP2016197741A5 (enExample)
JP2012124532A5 (enExample)
JP2011199273A5 (enExample)
JP2012009838A5 (ja) 半導体装置の作製方法
JP2012216796A5 (enExample)
JP2011192974A5 (ja) 半導体装置の作製方法
JP2013219336A5 (enExample)
JP2012160715A5 (enExample)
JP2011243973A5 (enExample)
JP2011029628A5 (enExample)
JP2011222988A5 (enExample)
JP2011029627A5 (enExample)
JP2012033911A5 (enExample)