JP5926996B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5926996B2
JP5926996B2 JP2012070515A JP2012070515A JP5926996B2 JP 5926996 B2 JP5926996 B2 JP 5926996B2 JP 2012070515 A JP2012070515 A JP 2012070515A JP 2012070515 A JP2012070515 A JP 2012070515A JP 5926996 B2 JP5926996 B2 JP 5926996B2
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film
oxygen
transistor
oxide semiconductor
substrate
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JP2012216806A (ja
JP2012216806A5 (enExample
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)
JP2012070515A 2011-04-01 2012-03-27 半導体装置の作製方法 Active JP5926996B2 (ja)

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JP2012070515A JP5926996B2 (ja) 2011-04-01 2012-03-27 半導体装置の作製方法

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JP2011081859 2011-04-01
JP2011081859 2011-04-01
JP2012070515A JP5926996B2 (ja) 2011-04-01 2012-03-27 半導体装置の作製方法

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JP2012216806A JP2012216806A (ja) 2012-11-08
JP2012216806A5 JP2012216806A5 (enExample) 2015-04-16
JP5926996B2 true JP5926996B2 (ja) 2016-05-25

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TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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KR20130130913A (ko) * 2012-05-23 2013-12-03 성균관대학교산학협력단 터치 패널 및 이의 제조 방법
KR101961426B1 (ko) * 2012-05-30 2019-03-25 삼성디스플레이 주식회사 박막 트랜지스터 및 그 형성 방법
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KR102050243B1 (ko) * 2013-12-02 2019-11-29 한국전자통신연구원 자발광형 소자 및 반사형 소자를 포함하는 이중모드 화소 및 이를 이용한 이중모드 디스플레이
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP6488124B2 (ja) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
JP6273606B2 (ja) * 2014-01-31 2018-02-07 国立研究開発法人物質・材料研究機構 固定電荷を内部に誘起したゲート絶縁膜
WO2016067585A1 (ja) * 2014-10-29 2016-05-06 株式会社Ｊｏｌｅｄ 薄膜半導体装置、有機ｅｌ表示装置及び薄膜半導体装置の製造方法
KR102456654B1 (ko) 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102524983B1 (ko) 2014-11-28 2023-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
WO2016125051A1 (en) * 2015-02-04 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102582523B1 (ko) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9496415B1 (en) 2015-12-02 2016-11-15 International Business Machines Corporation Structure and process for overturned thin film device with self-aligned gate and S/D contacts
JP6692645B2 (ja) * 2016-01-15 2020-05-13 株式会社ジャパンディスプレイ 半導体装置
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
KR102391754B1 (ko) 2016-05-20 2022-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 또는 이를 포함하는 표시 장치
JP7109902B2 (ja) * 2017-10-26 2022-08-01 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN108299704B (zh) * 2018-01-29 2020-05-12 谭丁宁 一种节能片及其制造方法
CN110416063B (zh) * 2019-06-27 2021-08-06 惠科股份有限公司 一种薄膜晶体管的制作方法及显示面板
CN110444601A (zh) * 2019-07-29 2019-11-12 天津大学 非晶铟镓氧化锌薄膜晶体管及其制造方法
CN110641052B (zh) * 2019-10-30 2021-05-14 仁新实业发展（信阳）有限公司 一种人造石英石板修复装置
JP7516210B2 (ja) * 2020-10-29 2024-07-16 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024040960A (ja) * 2022-09-13 2024-03-26 株式会社ジャパンディスプレイ 半導体装置

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