CN110444601A - 非晶铟镓氧化锌薄膜晶体管及其制造方法 - Google Patents
非晶铟镓氧化锌薄膜晶体管及其制造方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 30
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 15
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- 239000004411 aluminium Substances 0.000 description 1
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- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
本发明涉及柔性电子器件领域，为在较为简便的工艺中设计并制备底部驱动的柔性薄膜晶体管，极大丰富晶体管作为电路元器件的用处，使得该柔性器件在大规模集成电路和光电器件的应用提供可能，本发明采取的技术方案是，非晶铟镓氧化锌薄膜晶体管及其制造方法，采用磁控溅射工艺在聚对苯二甲酸乙二醇酯PET衬底上形成氧化铟锡ITO底栅电极以及氧化硅SiO2/氧化铝Al2O3栅介质膜，随后通过磁控溅射的方法形成有源层铟镓氧化锌IGZO薄膜，最后通过光刻以及真空电子束蒸镀的方式形成源漏电极，这样就完成了晶体管的制备。本发明主要应用于柔性电子器件设计制造场合。
Description
技术领域
本发明涉及柔性器件领域，具体涉及到一种基于非晶IGZO的多层材料作为栅介质层的底栅薄膜晶体管的结构设计以及制备方法。
背景技术
柔性电子是将有机、无机材料电子器件制作在柔性、可延性塑料或薄金属基板上的新兴电子科技，在信息、能源、医疗、国防等领域都具有广泛应用。如印刷射频识别标签(RFID)、电子用表面粘贴、有机发光二极管OLED、柔性电子显示器等。与传统集成电路(IC)技术一样，柔性电子技术发展的主要驱动力是制造工艺和装备。在更大幅面的基板上以更低的成本制造出特征尺寸更小的柔性电子器件成为了制造的关键。本发明采用一种基于非晶IGZO 制备的新型工艺，采用磁控溅射形成底栅电极，，磁控溅射形成栅介质层和有源层，随后通过光刻和真空电子束蒸镀技术形成金属源漏电极，将来有望在可穿戴电子，大规模柔性集成电路等方面取得广泛应用。
发明内容
为克服现有技术的不足，本发明旨在设计并制备一种基于柔性PET衬底的双层异质栅介质层的底栅结构晶体管，采用磁控溅射的低温工艺，在较为简便的工艺中设计并制备底部驱动的柔性薄膜晶体管，极大丰富了晶体管作为电路元器件的用处，使得该柔性器件在大规模集成电路和光电器件的应用提供了可能。为此，本发明采取的技术方案是，非晶铟镓氧化锌薄膜晶体管制造方法，采用磁控溅射工艺在聚对苯二甲酸乙二醇酯PET衬底上形成氧化铟锡 ITO底栅电极以及氧化硅SiO2/氧化铝Al2O3栅介质膜，随后通过磁控溅射的方法形成有源层铟镓氧化锌IGZO薄膜，最后通过光刻以及真空电子束蒸镀的方式形成源漏电极，这样就完成了晶体管的制备。
具体步骤细化如下：
a、选用PET柔性材料作为衬底，首先将PET放进盛有丙酮溶液的烧杯中，然后在超声波清洗器中清洗5分钟，随后使用异丙醇溶液将用丙酮清洗过的PET在超声波清洗器中将丙酮清洗干净，得到较为清洁的衬底；
b、采用磁控溅射在PET衬底上镀200nm厚ITO膜以及5nm厚SiO2和5nm厚的Al2O3，作为底部栅介质层；
c、采用磁控溅射的方法在介质层的上方形成IGZO薄膜作为有源层，选择的靶材为InGaZnO4；
d、在IGZO有源层上涂胶，对准光刻，形成源漏电极的光刻图案，采用真空电子束蒸镀的方式形成100nm的金属源漏电极层，去胶之后，器件的制备完成。
非晶铟镓氧化锌薄膜晶体管，聚对苯二甲酸乙二醇酯PET衬底上依次形成有氧化铟锡ITO 底栅电极以及氧化硅SiO2/氧化铝Al2O3栅介质膜，随后通过磁控溅射的方法在氧化铝Al2O3上形成有源层铟镓氧化锌IGZO薄膜，IGZO薄膜上设置有源漏电极。
本发明的特点及有益效果是：
本发明工作原理与传统基于二氧化硅(SiO2)的晶体管的原理的区别在于该种器件属于耗尽型器件，而传统的SiO2器件属于增强型器件，耗尽型器件的工作原理为在未施加偏压时，在非晶IGZO薄膜靠近栅氧化物的表面处会形成导电沟道，器件导通，需要在栅电极施加负偏压器件才能关闭，通过栅压控制器件是否关闭，通过控制源漏电极之间的电压控制器件的源漏之间电流，即饱和电流。此外，柔性衬底可以减少传统硅基衬底晶体管的寄生效应，并可以在不同的弯曲程度下工作，为高性能柔性电路的大规模集成以及可穿戴电子设备的广泛应用提供了可能。
本发明中的晶体管采用的是高介电常数的栅介质层材料，与传统的介质层材料相比可以做得更薄，而且性能更好，有更高的电流开关比，因而该类器件有较高的集成度，有更为广泛的应用。此外，本发明是集成在塑料衬底上的晶体管器件，当塑料衬底弯曲时，依旧可以满足器件的正常工作，可以在智能穿戴，人工皮肤，生物医疗、光电器件等方面取得更为广泛的应用。
附图说明：
图1为柔性底栅薄膜晶体管的剖面图。
图2为发明的工作原理图。
具体实施方式
本发明以柔性衬底为基础，介绍了一种在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备的双层异质栅介质层晶体管的结构以及制备方案，晶体管的主要结构包含PET塑料衬底，氧化铟锡(ITO)栅电极层，氧化硅(SiO2)和氧化铝(Al2O3)两层材料作为栅极介质层(SiO2/Al2O3)，金属源漏电极层。本文采用一种新型的制备工艺，在沉积有ITO导电层的PET衬底上采用磁控溅射的方法涂上三层栅极介质层SiO2/Al2O3作为底部栅氧层，接着采用磁控溅射的方法在介质层的上方形成厚度为10nm的铟镓氧化锌(IGZO)薄膜作为有源层，选择的靶材为铟镓氧化锌(InGaZnO4)，接下来通过设计制备好的掩膜版光刻制备源漏电极，实现一个较高频率下工作的底栅结构晶体管的制备。晶体管具有高介电常数的栅极介质层，在同样的条件下可以做的很薄，从而满足集成电路尺寸逐渐减小的趋势，而且有较好的性能以及较高的工作频率和较强的栅极控制力，在柔性集成电路的制作、智能穿戴以及光电器件领域具有广泛的应用前景。
本发明的目的在于设计并制备一种基于柔性PET衬底的双层异质栅介质层的底栅结构晶体管，采用磁控溅射的低温工艺，在较为简便的工艺中设计并制备底部驱动的柔性薄膜晶体管，极大丰富了晶体管作为电路元器件的用处，使得该柔性器件在大规模集成电路和光电器件的应用提供了可能。
本发明的技术方案在于采用磁控溅射工艺在PET衬底上形成ITO底栅电极以及SiO2/Al2O3栅介质膜，随后通过磁控溅射的方法形成有源层IGZO薄膜，最后通过光刻以及真空电子束蒸镀的方式形成源漏电极，这样就完成了晶体管的制备。
该基于非晶IGZO薄膜的柔性底栅薄膜晶体管的主要工作原理与传统基于二氧化硅(SiO2) 的晶体管的原理的区别在于该种器件属于耗尽型器件，而传统的SiO2器件属于增强型器件，耗尽型器件的工作原理为在未施加偏压时，在非晶IGZO薄膜靠近栅氧化物的表面处会形成导电沟道，器件导通，需要在栅电极施加负偏压器件才能关闭，通过栅压控制器件是否关闭，通过控制源漏电极之间的电压控制器件的源漏之间电流，即饱和电流。此外，柔性衬底可以减少传统硅基衬底晶体管的寄生效应，并可以在不同的弯曲程度下工作，为高性能柔性电路的大规模集成以及可穿戴电子设备的广泛应用提供了可能。
当未在ITO底栅电极中施加偏压时，在靠近栅介质层的非晶IGZO薄膜表面就会产生导电沟道，当在ITO底栅电极上施加一定的负偏压时，随着施加电压的逐渐增大，非晶IGZO薄膜靠近栅介质层的表面处会由于负电压的吸引作用而积累越来越多的空穴，这样源漏之间的导电沟道会被夹断，从而器件被关闭。本发明中的晶体管采用的是高介电常数的栅介质层材料，与传统的介质层材料相比可以做得更薄，而且性能更好，有更高的电流开关比，因而该类器件有较高的集成度，有更为广泛的应用。此外，本发明是集成在塑料衬底上的晶体管器件，当塑料衬底弯曲时，依旧可以满足器件的正常工作，可以在智能穿戴，人工皮肤，生物医疗、光电器件等方面取得更为广泛的应用。
具体的制作工艺如下：
a、选用PET柔性材料作为衬底，首先将PET放进盛有丙酮溶液的烧杯中，然后在超声波清洗器中清洗5分钟，随后使用异丙醇溶液将用丙酮清洗过的PET在超声波清洗器中将丙酮清洗干净，得到较为清洁的衬底。
b、采用磁控溅射在PET衬底上镀200nm厚ITO膜以及5nm厚SiO2和5nm厚的Al2O3，作为底部栅介质层。
c、采用磁控溅射的方法在介质层的上方形成IGZO薄膜作为有源层，选择的靶材为InGaZnO4。
d、在IGZO有源层上涂胶，对准光刻，形成源漏电极的光刻图案，采用真空电子束蒸镀的方式形成100nm的金属源漏电极层，去胶之后，器件的制备完成。
Claims (3)
1.一种非晶铟镓氧化锌薄膜晶体管制造方法，其特征是，采用磁控溅射工艺在聚对苯二甲酸乙二醇酯PET衬底上形成氧化铟锡ITO底栅电极以及氧化硅SiO2/氧化铝Al2O3栅介质膜，随后通过磁控溅射的方法形成有源层铟镓氧化锌IGZO薄膜，最后通过光刻以及真空电子束蒸镀的方式形成源漏电极，这样就完成了晶体管的制备。
2.如权利要求1所述的非晶铟镓氧化锌薄膜晶体管制造方法，其特征是，具体步骤细化如下：
a、选用PET柔性材料作为衬底，首先将PET放进盛有丙酮溶液的烧杯中，然后在超声波清洗器中清洗5分钟，随后使用异丙醇溶液将用丙酮清洗过的PET在超声波清洗器中将丙酮清洗干净，得到较为清洁的衬底；
b、采用磁控溅射在PET衬底上镀200nm厚ITO膜以及5nm厚SiO2和5nm厚的Al2O3，作为底部栅介质层；
c、采用磁控溅射的方法在介质层的上方形成IGZO薄膜作为有源层，选择的靶材为InGaZnO4；
d、在IGZO有源层上涂胶，对准光刻，形成源漏电极的光刻图案，采用真空电子束蒸镀的方式形成100nm的金属源漏电极层，去胶之后，器件的制备完成。
3.一种非晶铟镓氧化锌薄膜晶体管，其特征是，聚对苯二甲酸乙二醇酯PET衬底上依次形成有氧化铟锡ITO底栅电极以及氧化硅SiO2/氧化铝Al2O3栅介质膜，随后通过磁控溅射的方法在氧化铝Al2O3上形成有源层铟镓氧化锌IGZO薄膜，IGZO薄膜上设置有源漏电极。
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