JP2013042180A5 - - Google Patents

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Publication number
JP2013042180A5
JP2013042180A5 JP2012254358A JP2012254358A JP2013042180A5 JP 2013042180 A5 JP2013042180 A5 JP 2013042180A5 JP 2012254358 A JP2012254358 A JP 2012254358A JP 2012254358 A JP2012254358 A JP 2012254358A JP 2013042180 A5 JP2013042180 A5 JP 2013042180A5
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JP
Japan
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layer
forming
thin film
insulating
insulating film
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JP2012254358A
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English (en)
Japanese (ja)
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JP2013042180A (ja
JP5634487B2 (ja
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Priority claimed from JP2012254358A external-priority patent/JP5634487B2/ja
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Publication of JP2013042180A5 publication Critical patent/JP2013042180A5/ja
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Publication of JP5634487B2 publication Critical patent/JP5634487B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012254358A 2005-06-01 2012-11-20 半導体装置の作製方法 Expired - Fee Related JP5634487B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012254358A JP5634487B2 (ja) 2005-06-01 2012-11-20 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005161413 2005-06-01
JP2005161413 2005-06-01
JP2012254358A JP5634487B2 (ja) 2005-06-01 2012-11-20 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006150476A Division JP5210501B2 (ja) 2005-06-01 2006-05-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2013042180A JP2013042180A (ja) 2013-02-28
JP2013042180A5 true JP2013042180A5 (enExample) 2014-02-20
JP5634487B2 JP5634487B2 (ja) 2014-12-03

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JP2012254358A Expired - Fee Related JP5634487B2 (ja) 2005-06-01 2012-11-20 半導体装置の作製方法

Country Status (3)

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US (4) US7485511B2 (enExample)
JP (1) JP5634487B2 (enExample)
CN (1) CN100539086C (enExample)

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KR20180083253A (ko) 2017-01-12 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20190117789A (ko) * 2017-05-17 2019-10-16 가부시키가이샤 노다스크린 박막 캐패시터 구조, 및 당해 박막 캐패시터 구조를 구비한 반도체 장치
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法

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