JP2012119679A5 - - Google Patents

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Publication number
JP2012119679A5
JP2012119679A5 JP2011253306A JP2011253306A JP2012119679A5 JP 2012119679 A5 JP2012119679 A5 JP 2012119679A5 JP 2011253306 A JP2011253306 A JP 2011253306A JP 2011253306 A JP2011253306 A JP 2011253306A JP 2012119679 A5 JP2012119679 A5 JP 2012119679A5
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JP
Japan
Prior art keywords
dielectric
silane group
silsesquioxane
silicon
electronic device
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Application number
JP2011253306A
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English (en)
Japanese (ja)
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JP2012119679A (ja
JP5775426B2 (ja
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Publication date
Priority claimed from US12/957,445 external-priority patent/US8623447B2/en
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Publication of JP2012119679A publication Critical patent/JP2012119679A/ja
Publication of JP2012119679A5 publication Critical patent/JP2012119679A5/ja
Application granted granted Critical
Publication of JP5775426B2 publication Critical patent/JP5775426B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011253306A 2010-12-01 2011-11-18 電子機器を製造するプロセス Expired - Fee Related JP5775426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,445 2010-12-01
US12/957,445 US8623447B2 (en) 2010-12-01 2010-12-01 Method for coating dielectric composition for fabricating thin-film transistors

Publications (3)

Publication Number Publication Date
JP2012119679A JP2012119679A (ja) 2012-06-21
JP2012119679A5 true JP2012119679A5 (enExample) 2015-01-08
JP5775426B2 JP5775426B2 (ja) 2015-09-09

Family

ID=46083117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011253306A Expired - Fee Related JP5775426B2 (ja) 2010-12-01 2011-11-18 電子機器を製造するプロセス

Country Status (3)

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US (2) US8623447B2 (enExample)
JP (1) JP5775426B2 (enExample)
DE (1) DE102011087561B4 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325943A (zh) * 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
KR101680433B1 (ko) * 2014-11-25 2016-11-29 순천대학교 산학협력단 롤대롤 그라비아 인쇄기반 박막트랜지스터 제조방법, 박막트랜지스터 백플랜 제조방법, 백플랜 압력센서 및 스마트 장판의 제조방법
US10115785B1 (en) 2017-06-01 2018-10-30 Xerox Corporation Memory cells and devices
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法

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