JP2012119679A5 - - Google Patents

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JP2012119679A5
JP2012119679A5 JP2011253306A JP2011253306A JP2012119679A5 JP 2012119679 A5 JP2012119679 A5 JP 2012119679A5 JP 2011253306 A JP2011253306 A JP 2011253306A JP 2011253306 A JP2011253306 A JP 2011253306A JP 2012119679 A5 JP2012119679 A5 JP 2012119679A5
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JP
Japan
Prior art keywords
dielectric
silane group
silsesquioxane
silicon
electronic device
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JP2011253306A
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Japanese (ja)
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JP5775426B2 (en
JP2012119679A (en
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Priority claimed from US12/957,445 external-priority patent/US8623447B2/en
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Claims (3)

基板の上に、誘電性材料と、架橋剤と、熱酸発生剤とを含む誘電性組成物を堆積させることと；
前記誘電性組成物を加熱してこの誘電性組成物を硬化させ、前記基板の上に誘電層を作成することとを含み、
前記誘電性材料は、シルセスキオキサン、かご型シルセスキオキサン（ＰＯＳＳ）、ポリシルセスキオキサン、シラン基を有するポリアクリレート、シラン基を有するポリビニル、シラン基を有するポリイミドシラン基を有するポリエステル、シラン基を有するポリエーテル、シラン基を有するポリケトン、シラン基を有するポリスルホンから選択されるケイ素含有材料であり、
前記誘電性材料は、低ｋ誘電性ポリマー及び高ｋ誘電性ポリマーを含み、前記ケイ素含有材料は低ｋ誘電性ポリマーであることを特徴とする電子機器を製造するプロセス。 Depositing a dielectric composition comprising a dielectric material, a cross-linking agent, and a thermal acid generator on the substrate;
The dielectric composition was heated by curing the dielectric composition, see containing and creating a dielectric layer on the substrate,
The dielectric material is silsesquioxane, cage silsesquioxane (POSS), polysilsesquioxane, polyacrylate having a silane group, polyvinyl having a silane group, polyester having a polyimide silane group having a silane group. A silicon-containing material selected from a polyether having a silane group, a polyketone having a silane group, and a polysulfone having a silane group,
A process for manufacturing an electronic device, wherein the dielectric material comprises a low-k dielectric polymer and a high-k dielectric polymer, and the silicon-containing material is a low-k dielectric polymer . 前記熱酸発生剤は、アミンで保護されたヒドロカルビルスルホン酸又はアミンで中和されたヒドロカルビルスルホン酸であることを特徴とする請求項１記載の電子機器を製造するプロセス。2. The process of manufacturing an electronic device according to claim 1, wherein the thermal acid generator is an amine-protected hydrocarbyl sulfonic acid or an amine-neutralized hydrocarbyl sulfonic acid. 前記ケイ素含有材料は、シルセスキオキサン、かご型シルセスキオキサン（ＰＯＳＳ）、ポリシルセスキオキサン及びこれらの混合物から選択される酸感受性誘電性材料であり、The silicon-containing material is an acid sensitive dielectric material selected from silsesquioxane, cage silsesquioxane (POSS), polysilsesquioxane and mixtures thereof;
前記高ｋ誘電性ポリマーは、ポリイミド、ポリエステル、ポリエーテル、ポリアクリレート、ポリビニル、ポリケトン、ポリスルホン、分子状ガラス化合物及びこれらの混合物から選択されることを特徴とする請求項１記載の電子機器を製造するプロセス。  The electronic device according to claim 1, wherein the high-k dielectric polymer is selected from polyimide, polyester, polyether, polyacrylate, polyvinyl, polyketone, polysulfone, molecular glass compound, and a mixture thereof. Process.
JP2011253306A 2010-12-01 2011-11-18 Process for manufacturing electronic equipment Active JP5775426B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,445 2010-12-01
US12/957,445 US8623447B2 (en) 2010-12-01 2010-12-01 Method for coating dielectric composition for fabricating thin-film transistors

Publications (3)

Publication Number Publication Date
JP2012119679A JP2012119679A (en) 2012-06-21
JP2012119679A5 true JP2012119679A5 (en) 2015-01-08
JP5775426B2 JP5775426B2 (en) 2015-09-09

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US (2) US8623447B2 (en)
JP (1) JP5775426B2 (en)
DE (1) DE102011087561B4 (en)

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